JP2000319346A - Production of phenolic resin for photoresist - Google Patents

Production of phenolic resin for photoresist

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Publication number
JP2000319346A
JP2000319346A JP13233099A JP13233099A JP2000319346A JP 2000319346 A JP2000319346 A JP 2000319346A JP 13233099 A JP13233099 A JP 13233099A JP 13233099 A JP13233099 A JP 13233099A JP 2000319346 A JP2000319346 A JP 2000319346A
Authority
JP
Japan
Prior art keywords
reaction
phenol
resin
photoresist
xylenol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13233099A
Other languages
Japanese (ja)
Other versions
JP3596855B2 (en
Inventor
Yasushi Arita
靖 有田
Osamu Onishi
治 大西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Durez Co Ltd
Original Assignee
Sumitomo Durez Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Durez Co Ltd filed Critical Sumitomo Durez Co Ltd
Priority to JP13233099A priority Critical patent/JP3596855B2/en
Publication of JP2000319346A publication Critical patent/JP2000319346A/en
Application granted granted Critical
Publication of JP3596855B2 publication Critical patent/JP3596855B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a phenolic resin for photoresist, excellent in resolution and having both highly thermal resistance and high sensitivity. SOLUTION: This method for producing a novolak-type phenolic resin for photoresist is featured that the novolak-type phenolic resin is obtained by reacting phenols (P1) having three or more functionalities with aldehydes (A) in the presence of a basic catalyst at pH 7-12 as a primary reaction to obtain a resol resin and by reacting the resol resin with added phenols (P2) in the presence of an added acid catalyst in an adjusted state at pH 1-6 as a secondary reaction, and has a weight average molecular weight of 100-5,000 when the primary reaction ended and a weight average molecular weight of 1,500-20,000 when the secondary reaction ended respectively in terms of polystyrene measured with GPC.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体やLCDな
どを製造する際のリソグラフィーに使用されるフォトレ
ジストのベース樹脂として使用され、高耐熱性、高残膜
率、高感度、高解像度なフォトレジストの製造を可能に
するフォトレジスト用ノボラック型フェノール樹脂の製
造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used as a base resin for a photoresist used for lithography in manufacturing semiconductors and LCDs, and has a high heat resistance, a high residual film ratio, a high sensitivity and a high resolution. The present invention relates to a method for producing a novolak type phenol resin for a photoresist, which enables the production of a resist.

【0002】[0002]

【従来の技術】一般にポジ型フォトレジストにはナフト
キノンジアジド化合物等のキノンジアジド基を有する感
光剤とアルカリ可溶性樹脂(例えば、ノボラック型フェ
ノール樹脂)が用いられている。このような組成からな
るポジ型フォトレジストは、露光後にアルカリ溶液によ
る現像によって高い解像力を示し、IC、LSI等の半
導体製造、LCDなどの回路基材の製造に利用されてい
る。またノボラック型フェノール樹脂はプラズマドライ
エッチングに対し、芳香環を多く持つ構造に起因する高
い耐熱性も有しており、これまでノボラック型フェノー
ル樹脂とナフトキノンジアジド系感光剤とを含有する数
多くのポジ型フォトレジストが開発、実用化され、大き
な成果を挙げてきている。
2. Description of the Related Art In general, a positive photoresist uses a photosensitive agent having a quinonediazide group such as a naphthoquinonediazide compound and an alkali-soluble resin (for example, a novolak-type phenol resin). Positive photoresists having such a composition exhibit high resolution by exposure to an alkaline solution after exposure, and are used in the manufacture of semiconductors such as ICs and LSIs and the manufacture of circuit substrates such as LCDs. In addition, novolak type phenolic resins also have high heat resistance to plasma dry etching due to the structure with many aromatic rings, and many positive type phenolic resins containing novolak type phenolic resins and naphthoquinonediazide-based photosensitizers have been used. Photoresists have been developed and put into practical use, and have achieved great results.

【0003】一般にポジ型フォトレジストには、メタク
レゾール・パラクレゾール混合物とホルムアルデヒドを
酸触媒の存在下で反応させて得られたノボラック型フェ
ノール樹脂が使用されている。そして、フォトレジスト
の特性を調整または向上させるために、フェノール樹脂
中のメタクレゾール・パラクレゾール混合物の比率や分
子量、分子量分布などの検討がなされてきた。
In general, a positive photoresist is a novolak phenol resin obtained by reacting a mixture of meta-cresol and para-cresol with formaldehyde in the presence of an acid catalyst. In order to adjust or improve the characteristics of the photoresist, the ratio, the molecular weight, the molecular weight distribution, and the like of the meta-cresol-para-cresol mixture in the phenol resin have been studied.

【0004】しかし近年、LSIの高集積化に伴い、更
なる高精度微細パターンの形成が必要になってきてい
る。そのため、フォトレジストに対して種々の特性を向
上するよう要求が高まっている。半導体用フォトレジス
トの分野では、高耐熱性・高解像度・高感度などの特性
が要求されており、高耐熱化のためにキシレノール,ト
リメチルフェノールなどのアルキルフェノール類や芳香
族アルデヒドなどのモノマーが検討され、高感度化のた
めにヒドロキシベンズアルデヒドなどが検討された例が
ある。しかしいずれも、ある程度の向上は見られるもの
の、飛躍的な効果は得られなかった。分子構造制御の観
点では、高解像度化のためにフェノール樹脂の結合基が
芳香環のオルソ−オルソで結合した構造を多く含むハイ
オルソ樹脂を適用した例がある。かかる樹脂を使用した
場合、高解像度化は図れるものの、耐熱性が低下するこ
とや感度が悪くなるなどの欠点が発生し、実用化には至
っていない。
However, in recent years, with higher integration of LSIs, it has become necessary to form finer patterns with higher precision. Therefore, there is an increasing demand for photoresists to improve various characteristics. In the field of photoresists for semiconductors, characteristics such as high heat resistance, high resolution, and high sensitivity are required. For higher heat resistance, monomers such as alkylphenols such as xylenol and trimethylphenol and aromatic aldehydes are being studied. There is an example in which hydroxybenzaldehyde and the like have been studied for higher sensitivity. However, in each case, although some improvement was observed, no dramatic effect was obtained. From the viewpoint of controlling the molecular structure, there is an example in which a high-ortho resin containing a large number of structures in which the bonding groups of a phenol resin are bonded by ortho-ortho on an aromatic ring has been applied for higher resolution. When such a resin is used, high resolution can be achieved, but disadvantages such as a decrease in heat resistance and a decrease in sensitivity occur, and the resin has not been put to practical use.

【0005】反応処方を改良した方法として、特開平3
−29950号公報の例があり、レゾール樹脂を原料に
用いたフォトレジスト用ノボラック樹脂の記述がなされ
ている。しかしながら、パラクレゾールという2官能性
モノマーのレゾールを用いてノボラック化反応をしてお
り、耐熱性が悪く、解像度・感度も低いことから実用に
適するものではなかった。
[0005] As a method for improving the reaction formula, Japanese Patent Laid-Open No.
No. 29950 describes an example of a photoresist novolak resin using a resole resin as a raw material. However, the novolak reaction is carried out using a bifunctional monomer, resole, paracresol, which is not suitable for practical use because of poor heat resistance and low resolution and sensitivity.

【0006】[0006]

【発明が解決しようとする課題】本発明の目的は、解像
度に優れ・高耐熱性・高感度を兼ね備えたフォトレジス
トの製造を可能にするフォトレジスト用フェノール樹脂
の製造方法を提供することである。本発明者は、フォト
レジストにおいて、ベース樹脂となるフェノール樹脂の
分子構造は、フォトレジストの耐熱性向上のためには高
密度な三次元分子構造が好ましく、解像度、感度向上の
ためには分子の末端部分に感光剤との相互作用が高いモ
ノマーを結合させることが、露光後の現像時に、樹脂と
結合した感光剤が溶解抑止効果を有効に発現させるの
で、良い分子構造と考えた。そこで本発明は、このよう
な分子構造を達成するために鋭意研究を行なった結果得
られたものである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for producing a phenolic resin for a photoresist, which enables the production of a photoresist having excellent resolution, high heat resistance and high sensitivity. . The present inventors have found that, in a photoresist, the molecular structure of a phenol resin serving as a base resin is preferably a high-density three-dimensional molecular structure in order to improve the heat resistance of the photoresist, and to improve the resolution and sensitivity. It was considered that the binding of a monomer having a high interaction with the photosensitizer to the terminal portion is a good molecular structure because the photosensitizer bonded to the resin effectively exerts a dissolution inhibiting effect during development after exposure. Therefore, the present invention has been obtained as a result of intensive studies for achieving such a molecular structure.

【0007】[0007]

【課題を解決するための手段】本発明は、3官能性以上
のフェノール類(P1)及びアルデヒド類(A)を塩基
性触媒の存在下、pH7〜12で反応(一次反応)させ
て得たレゾール樹脂に、フェノール類(P2)と酸触媒
を添加してpH1〜6に調整し、さらに反応(二次反
応)させて得られるノボラック型フェノール樹脂で、G
PC測定によるポリスチレン換算の重量平均分子量が、
一次反応終了時が100〜5000で二次反応終了時が
1500〜20000であることを特徴とするフォトレ
ジスト用ノボラック型フェノール樹脂の製造方法であ
る。
Means for Solving the Problems The present invention is obtained by reacting a phenol (P1) and an aldehyde (A) having a functionality of 3 or more at a pH of 7 to 12 (primary reaction) in the presence of a basic catalyst. A novolak-type phenol resin obtained by adding a phenol (P2) and an acid catalyst to a resole resin to adjust the pH to 1 to 6, and further performing a reaction (secondary reaction).
The weight average molecular weight in terms of polystyrene by PC measurement is
A method for producing a novolak-type phenolic resin for a photoresist, wherein the end of the primary reaction is from 100 to 5000 and the end of the secondary reaction is from 1500 to 20,000.

【0008】以下に、本発明について詳細に説明する。
初めに、原料について説明する。3官能性フェノール類
(P1)としてはフェノール、メタクレゾール、3,5
−キシレノール、メタエチルフェノール、カテコール、
レゾルシノール、メタクロロフェノール、メタフェニル
フェノールなどがあげられ、アルデヒド類との反応が可
能な反応点が3個以上あるフェノール類であれば特に限
定されることはなく、単独又は混合して使用することが
できる。実用上、特に好ましい3官能性フェノール類
(P1)としては、メタクレゾール、フェノールがあげ
られる。
Hereinafter, the present invention will be described in detail.
First, the raw materials will be described. The trifunctional phenols (P1) include phenol, metacresol, 3,5
-Xylenol, metaethylphenol, catechol,
Examples include resorcinol, metachlorophenol, and metaphenylphenol, and are not particularly limited as long as they are phenols having three or more reaction points capable of reacting with aldehydes, and may be used alone or in combination. Can be. Practically particularly preferred trifunctional phenols (P1) include meta-cresol and phenol.

【0009】アルデヒド類(A)としては、ホルムアル
デヒド(ホルマリン)、パラホルムアルデヒドやアセト
アルデヒド、プロピルアルデヒド、ブチルアルデヒド、
イソブチルアルデヒド、イソバレルアルデヒド、ヘキシ
ルアルデヒド、オクチルアルデヒドなどのアルキルアル
デヒド類、アクロレイン、クロトンアルデヒドなどの不
飽和アルキルアルデヒド類、サリチルアルデヒド、パラ
ヒドロキシベンズアルデヒドなどのヒドロキシベンズア
ルデヒド類、ベンズアルデヒド、フタルアルデヒドなど
の芳香族アルデヒド類、グリオキサール、グルタルアル
デヒドなどのジアルデヒド類があげられるが、これらに
限定されることはなく、単独及び混合して使用すること
ができる。実用上特に有効なアルデヒド類としては、ホ
ルムアルデヒド(ホルマリン)、パラホルムアルデヒド
があげられる。
The aldehydes (A) include formaldehyde (formalin), paraformaldehyde, acetaldehyde, propylaldehyde, butyraldehyde,
Alkyl aldehydes such as isobutyraldehyde, isovaleraldehyde, hexyl aldehyde, octyl aldehyde, unsaturated alkyl aldehydes such as acrolein and crotonaldehyde, hydroxybenzaldehydes such as salicylaldehyde and parahydroxybenzaldehyde, and aromatics such as benzaldehyde and phthalaldehyde Examples thereof include dialdehydes such as aldehydes, glyoxal, and glutaraldehyde, but are not limited thereto, and may be used alone or as a mixture. Aldehydes that are particularly effective in practical use include formaldehyde (formalin) and paraformaldehyde.

【0010】ノボラック化反応(二次反応)で使用され
るフェノール類(P2)は、フェノール、オルソクレゾ
ール、メタクレゾール、パラクレゾール、2,3−キシ
レノール、2,4−キシレノール、2,5−キシレノー
ル、2,6−キシレノール、3,4−キシレノール、
3,5−キシレノール、2,3,5−トリメチルフェノ
ール、2,3,6−トリメチルフェノール、エチルフェ
ノール、プロピルフェノール、ブチルフェノール、フェ
ニルフェノール、ハロゲン化フェノールなどが使用され
るが、アルデヒド類及びレゾール型フェノール樹脂のメ
チロール基と反応する反応点を1個以上持つフェノール
類であれば特に限定されることはなく、単独又は2種以
上を混合使用してもよい。実用上特に好ましいフェノー
ル類(P2)としては、パラクレゾール、キシレノール
類、トリメチルフェノール類があげられる。
The phenols (P2) used in the novolak reaction (secondary reaction) include phenol, orthocresol, metacresol, paracresol, 2,3-xylenol, 2,4-xylenol, 2,5-xylenol , 2,6-xylenol, 3,4-xylenol,
3,5-xylenol, 2,3,5-trimethylphenol, 2,3,6-trimethylphenol, ethylphenol, propylphenol, butylphenol, phenylphenol, halogenated phenol and the like are used, and aldehydes and resole type There is no particular limitation on phenols having one or more reaction points that react with the methylol group of the phenolic resin, and they may be used alone or in combination of two or more. Phenols (P2) particularly preferred for practical use include paracresol, xylenols, and trimethylphenols.

【0011】一次反応におけるアルデヒド類(A)とフ
ェノール類(P1)のモル比率(A/P1)は0.5〜
3.0であり、特に好ましくは0.7〜2.5である。
アルデヒド類(A)が0.5より少ない場合は、一次反
応後にできあがった分子の密度が下がり、耐熱性が低下
することになる。また、3.0より多い場合は、一次反
応後の遊離アルデヒドが多いことから、二次反応時のコ
ントロールが困難になり、場合によってはゲル化してし
まう。二次反応時のアルデヒド類(A)とフェノール類
(P1+P2)のモル比率(A/P1+P2)は、0.
2〜1.5であり、特に好ましくは0.5〜1.2であ
る。アルデヒド類(A)がO.2より少ない場合は、分
子量が小さすぎ、耐熱性が低下する。また、1.5より
多い場合は、二次反応時にゲル化がおこり、製造に支障
をきたすことがある。
The molar ratio (A / P1) of the aldehyde (A) and the phenol (P1) in the primary reaction is 0.5 to
3.0, particularly preferably 0.7 to 2.5.
When the amount of the aldehyde (A) is less than 0.5, the density of the molecule formed after the primary reaction decreases, and the heat resistance decreases. On the other hand, if it is more than 3.0, the amount of free aldehyde after the primary reaction is large, so that it is difficult to control the secondary reaction, and in some cases, it gels. The molar ratio (A / P1 + P2) of the aldehyde (A) and the phenol (P1 + P2) in the secondary reaction is 0.1.
It is 2 to 1.5, especially preferably 0.5 to 1.2. When the aldehyde (A) is O.D. If it is less than 2, the molecular weight is too small and the heat resistance decreases. If it is more than 1.5, gelation occurs during the secondary reaction, which may hinder production.

【0012】P1とP2のモル比率(P1/P2)は、
0.2〜3.0であり、特に好ましくは0.5〜2.5
である。3.0よりP1が多くなると一次反応後の分子
末端(メチロール基)は多いものの、その末端と反応す
るP2が足りなくなり、せっかくの分子末端が他の分子
末端と反応して潰れてしまい、P2が有効に感光剤と相
互作用をもてなくなり、感度低下の原因となる。また、
0.5よりP1が少なくなると二次反応後の分子量が小
さくなり、耐熱性をさげることになる。
The molar ratio between P1 and P2 (P1 / P2) is
0.2 to 3.0, particularly preferably 0.5 to 2.5
It is. When P1 is more than 3.0, although there are many molecular terminals (methylol groups) after the primary reaction, P2 reacting with the terminal is insufficient, and the molecular terminal reacts with another molecular terminal and is crushed, and P2 is crushed. Effectively loses interaction with the photosensitizer, causing a decrease in sensitivity. Also,
If P1 is less than 0.5, the molecular weight after the secondary reaction will be small, and the heat resistance will be reduced.

【0013】一次反応時の塩基性触媒としてはトリメチ
ルアミン、トリエチルアミン、トリブチルアミンなどの
三級アミン類、ピリジン、ジメチルアミノピリジン、ピ
ロリジノピリジンなどの芳香族アミン類、ジアザビシク
ロノネン(DBN)、ジアザビシクロウンデセン(DB
U)などの脂環式アミン類を使用することができるが、
特に限定されることなく、レゾール化反応を行うに十分
な塩基性を有していれば使用することができる。製造上
特に有効なものは、三級アミン類であり、実用上トリエ
チルアミン、トリブチルアミンが最も好ましい。使用量
については、特に限定されることはないが、系内のpH
が7〜12程度になる量であれば良い。実用上は、フェ
ノール類に対して5〜20重量%が好ましく、5重量%
より少ない場合は反応の進行が遅くなり経済的な観点か
ら不適切であり、20重量%より多い場合には反応が速
すぎて制御が困難であり、最終的に得られた樹脂から塩
基性触媒を除去することが難しくなり、フォトレジスト
の特性に悪影響を与える可能性がある。
The basic catalyst used in the primary reaction includes tertiary amines such as trimethylamine, triethylamine and tributylamine; aromatic amines such as pyridine, dimethylaminopyridine and pyrrolidinopyridine; diazabicyclononene (DBN); Zabicycloundecene (DB
Although alicyclic amines such as U) can be used,
There is no particular limitation, and it can be used as long as it has sufficient basicity to carry out the resolving reaction. Particularly effective ones in production are tertiary amines, and practically, triethylamine and tributylamine are most preferable. The amount used is not particularly limited, but the pH in the system
Should be about 7 to 12. Practically, it is preferably 5 to 20% by weight with respect to the phenol, and 5% by weight.
When the amount is less than the above, the progress of the reaction is slow, which is inappropriate from an economic viewpoint. When the amount is more than 20% by weight, the reaction is too fast to control, and the basic catalyst is difficult to obtain from the finally obtained resin. Is difficult to remove, which can adversely affect the properties of the photoresist.

【0014】酸性触媒としては、塩酸、硫酸、燐酸、ホ
ウ酸などの無機酸類、蓚酸、酢酸、安息香酸、パラトル
エンスルホン酸などの有機酸類があげられ、特に限定さ
れることなく単独及び混合して使用することができる。
好ましくは塩基性触媒との中和により水洗水に可溶な塩
を生じ、モノマー除去時に分解、昇華などにより反応系
から容易に除去できるものが好ましい。使用量について
は触媒の種類にもよるが、塩基性触媒を中和し、反応系
内のpHが1〜6の範囲になる量に設定することが好ま
しい。
Examples of the acidic catalyst include inorganic acids such as hydrochloric acid, sulfuric acid, phosphoric acid and boric acid, and organic acids such as oxalic acid, acetic acid, benzoic acid and p-toluenesulfonic acid. Can be used.
Preferably, a salt which is soluble in washing water by neutralization with a basic catalyst and which can be easily removed from the reaction system by decomposition, sublimation, etc. when removing the monomer is preferable. Although the amount used depends on the type of the catalyst, it is preferable to set the amount so that the basic catalyst is neutralized and the pH in the reaction system is in the range of 1 to 6.

【0015】次いで本発明における重量平均分子量につ
いて説明する。重量平均分子量は、ゲルパーミエーショ
ンクロマトグラフィー(GPC)測定によりポリスチレ
ン標準物質を用いて作成した検量線をもとに計算された
ものである。GPC測定はテトラヒドロフランを溶出溶
媒として使用し、流量1.0ml/分、カラム温度40
℃の条件で実施した。装置は、本体:TOSOH製HL
C−8020、検出器:波長280nmにセットしたT
OSOH製UV−8011、分析用カラム:昭和電工製
SHODEX;KF−802 1本、KF−803 1
本、KF−8051本、をそれぞれ使用した。
Next, the weight average molecular weight in the present invention will be described. The weight average molecular weight is a value calculated by gel permeation chromatography (GPC) based on a calibration curve prepared using a polystyrene standard substance. GPC measurement uses tetrahydrofuran as an elution solvent, a flow rate of 1.0 ml / min, and a column temperature of 40.
The test was performed under the condition of ° C. The device is the main body: HL made by TOSOH
C-8020, detector: T set at a wavelength of 280 nm
OSOH UV-8011, Analytical column: Showa Denko SHOdex; KF-802 one, KF-803 1
And KF-8051 were used.

【0016】本発明におけるフェノール樹脂の重量平均
分子量は、一次反応終了時は100〜5000で、特に
好ましくは300〜4000である。100より小さい
場合は、最終的に得られるフェノール樹脂の分子量も小
さくなりすぎ、耐熱性を損ねる。5000を越える場合
は、反応系内の粘度が高すぎるため、均一に攪拌できな
いなどの支障をきたす。また、二次反応終了時は150
0〜20000で、特に好ましくは2000〜1800
0である。1500より小さい場合は、耐熱性が不十分
であり、場合によってはフォトレジストの塗布が均一に
できない場合がある。20000を越える場合は、耐熱
性は良いものの感度が低下し実用的でない。
The weight average molecular weight of the phenolic resin in the present invention is 100 to 5,000 at the end of the primary reaction, and is particularly preferably 300 to 4,000. If it is less than 100, the molecular weight of the phenol resin finally obtained is too small, and heat resistance is impaired. If it exceeds 5,000, the viscosity in the reaction system is too high, which causes problems such as inability to stir uniformly. When the secondary reaction is completed, 150
0 to 20000, particularly preferably 2000 to 1800
0. If it is smaller than 1500, the heat resistance is insufficient, and in some cases, the photoresist may not be applied uniformly. If it exceeds 20,000, the heat resistance is good, but the sensitivity is lowered, which is not practical.

【0017】さらに、本発明を反応(製造)手順に沿っ
て説明する。反応は、攪拌機、温度計、熱交換機のつい
た反応釜にフェノール類(P1)、アルデヒド類
(A)、及び塩基性触媒を仕込み一次反応を開始する。
反応温度や時間はモノマーの反応性、目的とする特性に
よって適宜設定できるが、安定かつ経済的に製造可能な
レベルとして反応時間で0.5〜8時間、反応温度で4
0〜100℃が好ましい。反応終了後、フェノール類
(P2)と酸性触媒を添加し、二次反応を行う。二次反
応の反応温度や時間は、製造されるフェノール樹脂の特
性やモノマーの反応性により適宜選択できるが、安定か
つ経済的に製造可能なレベルとして反応時間で1〜10
時間、反応温度で50〜150℃が好ましい。また一次
反応あるいは二次反応時において、必要によって反応溶
媒を添加使用することもできる。溶媒の種類は限定され
ないが、フェノール樹脂を溶解する溶媒であれば使用で
きる。一例をあげるとメチルエチルケトン、メチルイソ
ブチルケトンなどのケトン類、ブタノールなどのアルコ
ール類、エトキシエタノールなどのエーテルアルコール
類などである。
Further, the present invention will be described along the reaction (production) procedure. In the reaction, a phenol (P1), an aldehyde (A), and a basic catalyst are charged into a reaction vessel equipped with a stirrer, a thermometer, and a heat exchanger to start a primary reaction.
The reaction temperature and time can be appropriately set depending on the reactivity of the monomer and the desired characteristics. However, the reaction time is 0.5 to 8 hours and the reaction temperature is 4
0-100 ° C is preferred. After completion of the reaction, a phenol (P2) and an acidic catalyst are added, and a secondary reaction is performed. The reaction temperature and time of the secondary reaction can be appropriately selected depending on the characteristics of the phenol resin to be produced and the reactivity of the monomer.
Time and reaction temperature are preferably 50 to 150 ° C. At the time of the primary reaction or the secondary reaction, a reaction solvent can be added and used if necessary. Although the type of the solvent is not limited, any solvent can be used as long as it dissolves the phenol resin. Examples include ketones such as methyl ethyl ketone and methyl isobutyl ketone, alcohols such as butanol, and ether alcohols such as ethoxyethanol.

【0018】反応終了後、反応のために添加した酸及び
塩基触媒を除去するために、水を加えて水洗を実施する
ことが好ましい。水洗水の量と回数は特に限定されない
が、水洗回数は1〜5回程度が残留触媒量と経済的な観
点から特に好ましい。また、水洗温度は特に限定されな
いが、触媒種除去の効率と作業性の観点から40〜95
℃で行うのが好ましい。水洗中、樹脂と水洗水の分離が
悪い場合は、樹脂粘度を低下させる溶媒の添加や水洗温
度を上昇させることが効果的である。溶媒種は特に限定
されないが、フェノール樹脂を溶解して粘度を低下させ
るものであれば使用することができる。一例をあげる
と、アセトン、メチルエチルケトン、メチルイソブチル
ケトンなどのケトン類、メタノール、エタノール、ブタ
ノールなどのアルコール類、エトキシエタノールなどの
エーテルアルコール類などである。
After completion of the reaction, it is preferable to add water and wash with water in order to remove the acid and base catalyst added for the reaction. Although the amount and the number of times of the washing water are not particularly limited, the number of times of the washing is preferably about 1 to 5 times from the viewpoint of the amount of the residual catalyst and the economy. The washing temperature is not particularly limited, but is preferably 40 to 95 from the viewpoint of the efficiency of removing the catalyst species and the workability.
C. is preferably performed at a temperature of. During the washing, if the separation of the resin and the washing water is poor, it is effective to add a solvent for lowering the resin viscosity or raise the washing temperature. The type of solvent is not particularly limited, but any solvent can be used as long as it dissolves the phenolic resin and lowers the viscosity. Examples include ketones such as acetone, methyl ethyl ketone and methyl isobutyl ketone, alcohols such as methanol, ethanol and butanol, and ether alcohols such as ethoxyethanol.

【0019】水洗終了後、常圧下及び減圧下で脱水・脱
モノマーを行い、フォトレジスト用フェノール樹脂を得
ることができる。脱水・脱モノマーの条件は限定されな
いが、得られたフェノール樹脂の安定性(バラツキ)や
粘度を考慮すると、減圧度は、0.1〜200torr
程度で行うのが特に好ましく、反応釜からの取り出し温
度は、150〜250℃で行うのが特に好ましい。
After washing, dehydration and demonomerization are performed under normal pressure and reduced pressure to obtain a phenol resin for a photoresist. The conditions for dehydration and demonomerization are not limited. However, considering the stability (variability) and viscosity of the obtained phenolic resin, the degree of decompression is 0.1 to 200 torr.
It is particularly preferable to carry out the reaction at a temperature of about 150 to 250 ° C.

【0020】最後に、フォトレジスト用フェノール樹脂
は、金属不純物の混入が極力ないことが重要な要求特性
の一つであり、本発明による製造にあたっては、ガラス
ライニング製及び/又はタンタル、ハフニウム、ジルコ
ニウム、ニオブ、チタンから選ばれた金属及び/又はそ
れらの合金からなり、実質的に他の材料を含まない金属
材料を反応設備材質として用いた製造装置を使用するこ
とが好ましい。
Finally, it is one of the important required characteristics that the phenolic resin for the photoresist contains as little metal impurities as possible. In the production according to the present invention, the phenolic resin is made of glass lining and / or tantalum, hafnium, zirconium. It is preferable to use a manufacturing apparatus using a metal material made of a metal selected from niobium, niobium and titanium and / or an alloy thereof and containing substantially no other material as a reaction facility material.

【0021】[0021]

【実施例】以下本発明を実施例により詳細に説明する。
ここに記載されている「部」及び「%」はすべて「重量
部」及び「重量%」を示し、本発明はこれら実施例によ
り何ら制約されるものではない。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to embodiments.
All “parts” and “%” described herein indicate “parts by weight” and “% by weight”, and the present invention is not limited by these examples.

【0022】《実施例1》攪拌機、温度計及び熱交換機
を有する5Lの四つ口フラスコにメタクレゾール(P
1)810g、37%のホルマリン(A)851g(モ
ル比:A/P1=1.4)及びトリエチルアミン40g
を仕込み、pH8.5、反応温度78〜82℃で75分
間反応を行った。その後、10%の蓚酸水220gを添
加して中和(pH=6.0)を行ない、パラクレゾール
(P2)1620g(モル比:A/P1+P2=0.4
7,P1/P2=0.5)及び蓚酸41gを添加してp
H1.5、反応温度98〜102℃で4時間反応させ
た。反応終了後、70℃まで冷却してアセトン350
g、イオン交換水1250gを添加して約70℃で攪拌
・静置した。分離水を除去した後、アセトン350g、
イオン交換水1250gを使用して、再度水洗操作を行
った。その後、常圧下で内温140℃まで脱水し、さら
に60torrの減圧下で195℃まで脱水・脱モノマ
ーを行い、フォトレジスト用フェノール樹脂1400g
を得た。一次反応後の反応物の重量平均分子量は100
0で、得られた樹脂の重量平均分子量は4800、遊離
モノマーは1.0%であった。
Example 1 Metacresol (P) was placed in a 5 L four-necked flask having a stirrer, a thermometer and a heat exchanger.
1) 810 g, 851 g of 37% formalin (A) (molar ratio: A / P1 = 1.4) and 40 g of triethylamine
And reacted at pH 8.5 and a reaction temperature of 78 to 82 ° C. for 75 minutes. Thereafter, 220 g of 10% aqueous oxalic acid was added to neutralize (pH = 6.0), and 1620 g of paracresol (P2) (molar ratio: A / P1 + P2 = 0.4)
7, P1 / P2 = 0.5) and 41 g of oxalic acid.
The reaction was carried out at H1.5 at a reaction temperature of 98 to 102 ° C for 4 hours. After completion of the reaction, the mixture is cooled to 70 ° C. and acetone 350
g, and 1250 g of ion-exchanged water were added, and the mixture was stirred and allowed to stand at about 70 ° C. After removing the separated water, acetone 350 g,
The water washing operation was performed again using 1250 g of ion-exchanged water. Thereafter, dehydration is performed under normal pressure to an internal temperature of 140 ° C., and further dehydration and demonomerization is performed to 195 ° C. under a reduced pressure of 60 torr.
I got The weight average molecular weight of the reaction product after the primary reaction is 100
At 0, the weight average molecular weight of the obtained resin was 4,800, and the free monomer was 1.0%.

【0023】《実施例2》攪拌機、温度計及び熱交換機
を有する5Lの四つ口フラスコにメタクレゾール(P
1)810g、92%のパラホルムアルデヒド(A)5
63g(モル比:A/P1=2.3)及びトリエチルア
ミン40gを仕込み、pH8.5、反応温度78〜82
℃で60分間反応を行った。その後、10%の蓚酸水2
20gを添加して中和(pH=6.2)を行ない、パラ
クレゾール(P2)450g(モル比:A/P1+P2
=1.48,P1/P2=1.8)及び蓚酸41gを添
加してpH2.5、反応温度98〜102℃で4時間反
応させた。反応終了後、70℃まで冷却してアセトン3
50g、イオン交換水1250gを添加して約70℃で
攪拌・静置した。分離水を除去した後、アセトン350
g、イオン交換水1250gを使用して、再度水洗操作
を行った。その後、常圧下で内温140℃まで脱水し、
さらに60torrの減圧下で195℃まで脱水・脱モ
ノマーを行い、フォトレジスト用フェノール樹脂120
0gを得た。一次反応後の反応物の重量平均分子量は3
500で、得られた樹脂の重量平均分子量は1800
0、遊離モノマーは1.5%であった。
Example 2 Metacresol (P) was placed in a 5 L four-necked flask having a stirrer, a thermometer and a heat exchanger.
1) 810 g, 92% paraformaldehyde (A) 5
63 g (molar ratio: A / P1 = 2.3) and 40 g of triethylamine were charged, the pH was 8.5, and the reaction temperature was 78 to 82.
The reaction was performed at 60 ° C. for 60 minutes. Then, 10% oxalic acid water 2
20 g was added for neutralization (pH = 6.2), and 450 g of paracresol (P2) (molar ratio: A / P1 + P2)
= 1.48, P1 / P2 = 1.8) and 41 g of oxalic acid were added and reacted at pH 2.5 at a reaction temperature of 98 to 102 ° C for 4 hours. After completion of the reaction, the mixture was cooled to 70 ° C. and acetone 3
50 g and 1250 g of ion-exchanged water were added, and the mixture was stirred and allowed to stand at about 70 ° C. After removing the separated water, acetone 350
g, and 1250 g of ion-exchanged water, the washing operation was performed again. After that, dehydrate to an internal temperature of 140 ° C under normal pressure,
Further, under reduced pressure of 60 torr, dehydration and demonomerization were performed to 195 ° C.
0 g was obtained. The weight average molecular weight of the reaction product after the primary reaction is 3
500, the weight average molecular weight of the obtained resin was 1800
0, free monomer was 1.5%.

【0024】《実施例3》攪拌機、温度計及び熱交換機
を有する5Lの四つ口フラスコにメタクレゾール(P
1)810g、37%のホルマリン(A)486g(モ
ル比:A/P1=0.8)及びトリブチルルアミン50
gを仕込み、pH9.0、反応温度78〜82℃で75
分間反応を行った。その後、10%の蓚酸水240gを
添加して中和(pH=6.4)を行ない、2,3−キシ
レノール(P2)305g、2,4−キシレノール(P
2)305g(モル比:A/P1+P2=0.48,P
1/P2=1.5)及び蓚酸41gを添加してpH1.
2、反応温度98〜102℃で4時間反応させた。反応
終了後、70℃まで冷却してアセトン350g、イオン
交換水1250gを添加して約70℃で攪拌・静置し
た。分離水を除去した後、アセトン350g、イオン交
換水1250gを使用して、再度水洗操作を行った。そ
の後、常圧下で内温140℃まで脱水し、さらに60t
orrの減圧下で195℃まで脱水・脱モノマーを行
い、フォトレジスト用フェノール樹脂1300gを得
た。一次反応後の反応物の重量平均分子量は500で、
得られた樹脂の重量平均分子量は2500、遊離モノマ
ーは2.5%であった。
Example 3 Metacresol (P) was placed in a 5 L four-necked flask having a stirrer, a thermometer and a heat exchanger.
1) 810 g, 486 g of 37% formalin (A) (molar ratio: A / P1 = 0.8) and 50% of tributyllamine
g, pH 9.0, reaction temperature 78-82 ° C and 75
The reaction was performed for minutes. Thereafter, 240 g of 10% aqueous oxalic acid was added for neutralization (pH = 6.4), and 305 g of 2,3-xylenol (P2) and 2,4-xylenol (P
2) 305 g (molar ratio: A / P1 + P2 = 0.48, P
1 / P2 = 1.5) and 41 g of oxalic acid.
2. The reaction was performed at a reaction temperature of 98 to 102 ° C. for 4 hours. After the completion of the reaction, the mixture was cooled to 70 ° C., 350 g of acetone and 1250 g of ion-exchanged water were added, and the mixture was stirred and allowed to stand at about 70 ° C. After removing the separated water, a water washing operation was performed again using 350 g of acetone and 1250 g of ion-exchanged water. After that, it was dehydrated under normal pressure to an internal temperature of 140 ° C, and further 60t
Dehydration and demonomerization were performed at 195 ° C. under reduced pressure of orr to obtain 1300 g of a phenol resin for a photoresist. The weight average molecular weight of the reaction product after the primary reaction is 500,
The weight average molecular weight of the obtained resin was 2500 and the free monomer was 2.5%.

【0025】《実施例4》攪拌機、温度計及び熱交換機
を有する5Lの四つ口フラスコに3,5−キシレノール
(P1)800g、37%のホルマリン(A)957g
(モル比:A/P1=1.8)及びトリエチルアミン3
5gを仕込み、pH7.5、反応温度78〜82℃で7
5分間反応を行った。その後、10%の蓚酸水200g
を添加して中和(pH=6.5)を行ない、パラクレゾ
ール1012g(モル比:A/P1+P2=0.74,
P1/P2=0.7)及び蓚酸35gを添加してpH
3.0、反応温度98〜102℃で4時間反応させた。
反応終了後、70℃まで冷却してアセトン350g、イ
オン交換水1250gを添加して約70℃で攪拌・静置
した。分離水を除去した後、アセトン350g、イオン
交換水1250gを使用して、再度水洗操作を行った。
その後、常圧下で内温140℃まで脱水し、さらに60
torrの減圧下で195℃まで脱水・脱モノマーを行
い、フォトレジスト用フェノール樹脂1500gを得
た。一次反応後の反応物の重量平均分子量は2500
で、得られた樹脂の重量平均分子量は9000、遊離モ
ノマーは2.0%であった。
Example 4 800 g of 3,5-xylenol (P1) and 957 g of 37% formalin (A) were placed in a 5 L four-necked flask having a stirrer, thermometer and heat exchanger.
(Molar ratio: A / P1 = 1.8) and triethylamine 3
5 g, pH 7.5, reaction temperature 78-82 ° C.
The reaction was performed for 5 minutes. Thereafter, 200 g of 10% oxalic acid water
For neutralization (pH = 6.5), and 1012 g of paracresol (molar ratio: A / P1 + P2 = 0.74)
(P1 / P2 = 0.7) and 35 g of oxalic acid were added to adjust the pH.
The reaction was carried out at 3.0 at a reaction temperature of 98 to 102 ° C. for 4 hours.
After the completion of the reaction, the mixture was cooled to 70 ° C., 350 g of acetone and 1250 g of ion-exchanged water were added, and the mixture was stirred and allowed to stand at about 70 ° C. After removing the separated water, a water washing operation was performed again using 350 g of acetone and 1250 g of ion-exchanged water.
After that, dehydrate to 140 ° C under normal pressure and further 60
Dehydration and demonomerization were performed at 195 ° C. under a reduced pressure of torr to obtain 1500 g of a phenol resin for a photoresist. The weight average molecular weight of the reaction product after the primary reaction is 2500
The weight average molecular weight of the obtained resin was 9,000 and the free monomer was 2.0%.

【0026】《実施例5》攪拌機、温度計及び熱交換機
を有する5Lの四つ口フラスコにフェノール(P1)7
00g、37%のホルマリン(A)1268g(モル
比:A/P1=2.1)及びトリエチルアミン50gを
仕込み、pH10.0、反応温度78〜82℃で45分
間反応を行った。その後、10%の蓚酸水260gを添
加して中和(pH=6.0)を行ない、パラクレゾール
350g(モル比:A/P1+P2=1.46,P1/
P2=2.3)、トリフルオロ酢酸40gを添加してp
H1.8、反応温度98〜102℃で4時間反応させ
た。反応終了後、70℃まで冷却してアセトン350
g、イオン交換水1250gを添加して約70℃で攪拌
・静置した。分離水を除去した後、アセトン350g、
イオン交換水1250gを使用して、再度水洗操作を行
った。その後、常圧下で内温140℃まで脱水し、さら
に60torrの減圧下で195℃まで脱水・脱モノマ
ーを行い、フォトレジスト用フェノール樹脂1000g
を得た。一次反応後の反応物の重量平均分子量は280
0で、得られた樹脂の重量平均分子量は8500、遊離
モノマーは1.0%であった。
Example 5 Phenol (P1) 7 was placed in a 5 L four-necked flask having a stirrer, a thermometer and a heat exchanger.
00 g, 1268 g of 37% formalin (A) (molar ratio: A / P1 = 2.1) and 50 g of triethylamine were charged and reacted at pH 10.0 at a reaction temperature of 78 to 82 ° C. for 45 minutes. Thereafter, 260 g of 10% aqueous oxalic acid was added for neutralization (pH = 6.0), and 350 g of paracresol (molar ratio: A / P1 + P2 = 1.46, P1 /
P2 = 2.3), 40 g of trifluoroacetic acid was added and p
The reaction was conducted at H1.8 at a reaction temperature of 98 to 102 ° C for 4 hours. After completion of the reaction, the mixture is cooled to 70 ° C. and acetone 350
g, and 1250 g of ion-exchanged water were added, and the mixture was stirred and allowed to stand at about 70 ° C. After removing the separated water, acetone 350 g,
The water washing operation was performed again using 1250 g of ion-exchanged water. Thereafter, dehydration is performed under normal pressure to an internal temperature of 140 ° C., and further dehydration and demonomerization is performed to 195 ° C. under a reduced pressure of 60 torr, and phenol resin for photoresist is 1000 g.
I got The weight average molecular weight of the reaction product after the primary reaction is 280
At 0, the weight average molecular weight of the obtained resin was 8,500 and the free monomer was 1.0%.

【0027】《実施例6》攪拌機、温度計及び熱交換機
を有する5Lの四つ口フラスコにメタクレゾール(P
1)810g、37%のホルマリン(A)912g(モ
ル比:A/P1=1.5)及びトリエチルアミン45g
を仕込み、pH9.0、反応温度78〜82℃で75分
間反応を行った。その後、10%の蓚酸水240gを添
加して中和(pH=6.3)を行ない、2,3,5−ト
リメチルフェノール1020g(モル比:A/P1+P
2=0.75,P1/P2=1.0)、蓚酸41gを添
加してpH1.8、反応温度98〜102℃で4時間反
応させた。反応終了後、70℃まで冷却してアセトン3
50g、イオン交換水1250gを添加して約70℃で
攪拌・静置した。分離水を除去した後、アセトン350
g、イオン交換水1250gを使用して、再度水洗操作
を行った。その後、常圧下で内温140℃まで脱水し、
さらに60torrの減圧下で195℃まで脱水・脱モ
ノマーを行い、フォトレジスト用フェノール樹脂150
0gを得た。一次反応後の反応物の重量平均分子量は2
200で、得られた樹脂の重量平均分子量は1200
0、遊離モノマーは3.5%であった。
Example 6 Metacresol (P) was placed in a 5 L four-necked flask having a stirrer, a thermometer and a heat exchanger.
1) 810 g, 912 g of 37% formalin (A) (molar ratio: A / P1 = 1.5) and 45 g of triethylamine
And reacted at pH 9.0 and a reaction temperature of 78 to 82 ° C. for 75 minutes. Thereafter, 240 g of 10% oxalic acid aqueous solution was added to neutralize (pH = 6.3), and 1020 g of 2,3,5-trimethylphenol (molar ratio: A / P1 + P
2 = 0.75, P1 / P2 = 1.0) and 41 g of oxalic acid were added and reacted at pH 1.8 at a reaction temperature of 98 to 102 ° C. for 4 hours. After completion of the reaction, the mixture was cooled to 70 ° C. and acetone 3
50 g and 1250 g of ion-exchanged water were added, and the mixture was stirred and allowed to stand at about 70 ° C. After removing the separated water, acetone 350
g, and 1250 g of ion-exchanged water, the washing operation was performed again. After that, dehydrate to an internal temperature of 140 ° C under normal pressure,
Further, dehydration and demonomerization were performed to 195 ° C. under a reduced pressure of 60 torr.
0 g was obtained. The weight average molecular weight of the reaction product after the primary reaction is 2
And the weight average molecular weight of the obtained resin was 1200.
0, free monomer was 3.5%.

【0028】《実施例7》攪拌機、温度計及び熱交換機
を有する5Lの四つ口フラスコにメタクレゾール(P
1)810g、37%のホルマリン(A)1216g
(モル比:A/P1=2.0)及びトリエチルアミン5
0gを仕込み、pH10.5、反応温度78〜82℃で
45分間反応を行った。その後、10%の蓚酸水260
gを添加して中和(pH=6.6)を行ない、2,6−
キシレノール763g(モル比:A/P1+P2=1.
09,P1/P2=1.2)、蓚酸40gを添加してp
H1.5、反応温度98〜102℃で4時間反応させ
た。反応終了後、70℃まで冷却してアセトン350
g、イオン交換水1250gを添加して約70℃で攪拌
・静置した。分離水を除去した後、アセトン350g、
イオン交換水1250gを使用して、再度水洗操作を行
った。その後、常圧下で内温140℃まで脱水し、さら
に60torrの減圧下で195℃まで脱水・脱モノマ
ーを行い、フォトレジスト用フェノール樹脂1500g
を得た。一次反応後の反応物の重量平均分子量は260
0で、得られた樹脂の重量平均分子量は15000、遊
離モノマーは1.5%であった。
Example 7 Metacresol (P) was placed in a 5 L four-necked flask having a stirrer, a thermometer, and a heat exchanger.
1) 810 g, 1216 g of 37% formalin (A)
(Molar ratio: A / P1 = 2.0) and triethylamine 5
After charging 0 g, the reaction was carried out at a pH of 10.5 and a reaction temperature of 78 to 82 ° C. for 45 minutes. Then, 10% oxalic acid water 260
g and neutralized (pH = 6.6), and 2,6-
763 g of xylenol (molar ratio: A / P1 + P2 = 1.
09, P1 / P2 = 1.2), 40 g of oxalic acid was added and p
The reaction was carried out at H1.5 at a reaction temperature of 98 to 102 ° C for 4 hours. After completion of the reaction, the mixture is cooled to 70 ° C. and acetone 350
g, and 1250 g of ion-exchanged water were added, and the mixture was stirred and allowed to stand at about 70 ° C. After removing the separated water, acetone 350 g,
The water washing operation was performed again using 1250 g of ion-exchanged water. Thereafter, dehydration is performed at an internal temperature of 140 ° C. under normal pressure, and dehydration and demonomerization is performed at 195 ° C. under a reduced pressure of 60 torr.
I got The weight average molecular weight of the reaction product after the primary reaction is 260
At 0, the resulting resin had a weight average molecular weight of 15,000 and free monomer of 1.5%.

【0029】《実施例8》攪拌機、温度計及び熱交換機
を有する5Lの四つ口フラスコにメタクレゾール(P
1)810g、37%のホルマリン(A)730g(モ
ル比:A/P1=1.2)及びトリエチルアミン40g
を仕込み、pH8.5、反応温度78〜82℃で60分
間反応を行った。その後、10%の蓚酸水240gを添
加して中和(pH=6.2)を行ない、2,3,6−ト
リメチルフェノール1275g(モル比:A/P1+P
2=0.53,P1/P2=0.8)及び蓚酸15gを
添加してpH4.0、反応温度98〜102℃で4時間
反応させた。反応終了後、70℃まで冷却してアセトン
350g、イオン交換水1250gを添加して約70℃
で攪拌・静置した。分離水を除去した後、アセトン35
0g、イオン交換水1250gを使用して、再度水洗操
作を行った。その後、常圧下で内温140℃まで脱水
し、さらに60torrの減圧下で195℃まで脱水・
脱モノマーを行い、フォトレジスト用フェノール樹脂1
300gを得た。一次反応後の反応物の重量平均分子量
は1500で、得られた樹脂の重量平均分子量は600
0、遊離モノマーは2.5%であった。
Example 8 Metacresol (P) was placed in a 5 L four-necked flask having a stirrer, a thermometer and a heat exchanger.
1) 810 g, 730 g of 37% formalin (A) (molar ratio: A / P1 = 1.2) and 40 g of triethylamine
And reacted at pH 8.5 and a reaction temperature of 78 to 82 ° C. for 60 minutes. Thereafter, 240 g of 10% oxalic acid water was added to neutralize (pH = 6.2), and 1,275 g of 2,3,6-trimethylphenol (molar ratio: A / P1 + P
2 = 0.53, P1 / P2 = 0.8) and 15 g of oxalic acid, and the mixture was reacted at pH 4.0 and a reaction temperature of 98 to 102 ° C. for 4 hours. After the completion of the reaction, the mixture was cooled to 70 ° C, and 350 g of acetone and 1250 g of ion-exchanged water were added.
And left to stir. After removing the separated water, acetone 35
The water washing operation was performed again using 0 g and 1250 g of ion-exchanged water. After that, dehydrate to 140 ° C under normal pressure and further to 195 ° C under reduced pressure of 60 torr.
Phenol resin 1 for photoresist after demonomerization
300 g were obtained. The weight average molecular weight of the reaction product after the primary reaction is 1500, and the weight average molecular weight of the obtained resin is 600.
0, free monomer was 2.5%.

【0030】《実施例9》攪拌機、温度計及び熱交換機
を有する5Lの四つ口フラスコにメタクレゾール(P
1)700g、37%のホルマリン(A)420g(モ
ル比:A/P1=0.8)及びトリエチルアミン45g
を仕込み、pH9.0、反応温度78〜82℃で80分
間反応を行った。その後、10%の蓚酸水240gを添
加して中和(pH=6.4)を行ない、3,4−キシレ
ノール1977g(モル比:A/P1+P2=0.2
3,P1/P2=0.4)及びトリクロロ酢酸45gを
添加してpH1.3、反応温度98〜102℃で4時間
反応させた。反応終了後、70℃まで冷却してアセトン
350g、イオン交換水1250gを添加して約70℃
で攪拌・静置した。分離水を除去した後、アセトン35
0g、イオン交換水1250gを使用して、再度水洗操
作を行った。その後、常圧下で内温140℃まで脱水
し、さらに60torrの減圧下で195℃まで脱水・
脱モノマーを行い、フォトレジスト用フェノール樹脂1
300gを得た。一次反応後の反応物の重量平均分子量
は2000で、得られた樹脂の重量平均分子量は700
0、遊離モノマーは2.0%であった。
Example 9 Metacresol (P) was placed in a 5 L four-necked flask having a stirrer, a thermometer and a heat exchanger.
1) 700 g, 420 g of 37% formalin (A) (molar ratio: A / P1 = 0.8) and 45 g of triethylamine
And reacted at pH 9.0 and a reaction temperature of 78 to 82 ° C. for 80 minutes. Thereafter, 240 g of 10% aqueous oxalic acid was added for neutralization (pH = 6.4), and 1977 g of 3,4-xylenol (molar ratio: A / P1 + P2 = 0.2).
3, P1 / P2 = 0.4) and 45 g of trichloroacetic acid were added, and the mixture was reacted at pH 1.3 and a reaction temperature of 98 to 102 ° C for 4 hours. After the completion of the reaction, the mixture was cooled to 70 ° C, and 350 g of acetone and 1250 g of ion-exchanged water were added.
And left to stir. After removing the separated water, acetone 35
The water washing operation was performed again using 0 g and 1250 g of ion-exchanged water. After that, dehydrate to 140 ° C under normal pressure and further to 195 ° C under reduced pressure of 60 torr.
Phenol resin 1 for photoresist after demonomerization
300 g were obtained. The weight average molecular weight of the reaction product after the primary reaction is 2000, and the weight average molecular weight of the obtained resin is 700.
0, free monomer was 2.0%.

【0031】《比較例1》実施例1と同様の反応装置に
メタクレゾール(P)400g、パラクレゾール(P)
600g、37%ホルマリン(A)412.9g(モル
比:A/P=0.55)及び蓚酸2gを仕込み、98〜
102℃で4時間還流反応を行った後、常圧下で脱水を
行い内温140℃まで上昇させ、次いで80Torrの
減圧下で内温195℃まで脱水・脱モノマーを行ない、
フォトレジスト用フェノール樹脂を得た。得られた樹脂
の重量平均分子量は2200、遊離モノマー 3.3%で
あった。
Comparative Example 1 400 g of meta-cresol (P) and para-cresol (P) were placed in the same reactor as in Example 1.
600 g, 412.9 g of 37% formalin (A) (molar ratio: A / P = 0.55) and 2 g of oxalic acid were charged, and 98-
After a reflux reaction at 102 ° C. for 4 hours, dehydration was performed under normal pressure to raise the internal temperature to 140 ° C., and then dehydration and demonomerization were performed at an internal temperature of 195 ° C. under a reduced pressure of 80 Torr.
A phenolic resin for a photoresist was obtained. The weight average molecular weight of the obtained resin was 2,200 and the free monomer was 3.3%.

【0032】《比較例2》実施例1と同様の反応装置に
メタクレゾール(P)400部、パラクレゾール(P)
600部、37%ホルマリン(A)563.1部(モル
比:A/P=0.75)及び蓚酸7部を仕込み、96〜
100℃で5時間還流反応を行った後、常圧下で脱水を
行い、内温150℃まで上昇させ、次いで80Torr
の減圧下で内温195℃まで脱水・脱モノマーを行な
い、フォトレジスト用フェノール樹脂を得た。得られた
樹脂の重量平均分子量は9300、遊離モノマー 2.6
%であった。
Comparative Example 2 400 parts of meta-cresol (P) and para-cresol (P) were placed in the same reactor as in Example 1.
96 parts, 563.1 parts of 37% formalin (A) (molar ratio: A / P = 0.75) and 7 parts of oxalic acid were charged, and 96 to
After performing a reflux reaction at 100 ° C. for 5 hours, dehydration is performed under normal pressure, the internal temperature is raised to 150 ° C., and then 80 Torr
The mixture was dehydrated and demonomerized to an internal temperature of 195 ° C. under reduced pressure to obtain a phenol resin for a photoresist. The obtained resin has a weight average molecular weight of 9300 and a free monomer of 2.6.
%Met.

【0033】評価例1:耐熱性の評価方法 ノボラック型フェノール樹脂100部とナフトキノン−
1,2−ジアジド−5−スルホン酸の2,3,4−トリ
ヒドロキシベンゾフェノンエステル30部とを乳酸エチ
ルに溶解し、レジスト溶液を調合した。これらを0.2
ミクロンメンブレンフィルターで濾過し、レジスト液と
した。これを情報によって塗布し、110℃で90秒間
ホットプレート上で乾燥させた。その後縮小投影露光装
置を用い、テストチャートマスクを介して露光し、現像
液(2.38%テトラメチルアンモニウムヒドロオキサ
イド水溶液)を用い、50秒間現像した。得られたシリ
コンウエハーを温度を変えたホットプレート上で30分
間放置し、シリコウエハー上のレジストパターンの形状
変化を電子顕微鏡で観察し耐熱性を評価した。
Evaluation Example 1: Evaluation method of heat resistance 100 parts of novolak type phenol resin and naphthoquinone-
30 parts of 2,3,4-trihydroxybenzophenone ester of 1,2-diazide-5-sulfonic acid was dissolved in ethyl lactate to prepare a resist solution. These are 0.2
The solution was filtered through a micron membrane filter to obtain a resist solution. This was applied by information and dried on a hot plate at 110 ° C. for 90 seconds. Thereafter, exposure was performed through a test chart mask using a reduction projection exposure apparatus, and development was performed for 50 seconds using a developing solution (2.38% aqueous solution of tetramethylammonium hydroxide). The obtained silicon wafer was left for 30 minutes on a hot plate where the temperature was changed, and the change in the shape of the resist pattern on the silicon wafer was observed with an electron microscope to evaluate the heat resistance.

【0034】評価例2:限界解像度・焦点深度の評価方
法 評価例1と同様に溶液調製、前処理、塗付、テストチャ
ートマスクによる露光・現像を行い、レジストパターン
形状を電子顕微鏡で観察した。焦点深度は、0.30μ
mの線幅において焦点を変化させた時の写真を目視で観
察し、解像可能な焦点変動幅を測定した。また、限界解
像度は、最適露光・現像条件での写真から解像しうる限
界を目視で判定・測定した。
Evaluation Example 2: Evaluation method of critical resolution and depth of focus In the same manner as in Evaluation Example 1, solution preparation, pretreatment, coating, exposure and development using a test chart mask were performed, and the resist pattern shape was observed with an electron microscope. Depth of focus is 0.30μ
A photograph when the focus was changed at a line width of m was visually observed, and a resolvable focus fluctuation width was measured. The limit resolution was determined and measured by visually observing the limit that could be resolved from a photograph under optimal exposure and development conditions.

【0035】評価例3:アルカリ溶解時間(ADR)の
評価方法 25%の樹脂−エチルセロソルブアセテート溶液を使用
して、シリコンウエハ上に約1マイクロメーターの厚み
になるようにスピンコーターで塗布し、110℃で90
秒間ホットプレート上で乾燥させた。その後、現像液
(2.38%テトラメチルアンモニウムヒドロオキサイ
ド水溶液)でシリコンウエハに塗布した樹脂を溶解し、
目視で溶解する時間を測定した。
Evaluation Example 3: Evaluation method of alkali dissolution time (ADR) Using a 25% resin-ethyl cellosolve acetate solution, a silicon coater was applied to a silicon wafer by a spin coater so as to have a thickness of about 1 micrometer. 90 at 110 ° C
Dry on a hot plate for 2 seconds. Thereafter, the resin applied to the silicon wafer is dissolved with a developing solution (2.38% aqueous solution of tetramethylammonium hydroxide),
The dissolution time was measured visually.

【0036】 表 1 種 類 重量平均分子量 ADR 焦点深度 限界解像度 耐熱性 Mw 秒/μm μm μm ℃ 実施例1 4800 18 1.2 0.28 160 実施例2 18000 60 1.0 0.30 165 実施例3 2500 4 1.4 0.25 150 実施例4 9000 25 1.4 0.28 160 実施例5 8500 24 1.2 0.26 160 実施例6 12000 45 1.0 0.30 160 実施例7 15000 55 1.0 0.30 165 実施例8 6000 20 1.2 0.28 160 実施例9 7000 21 1.4 0.25 160 比較例1 2200 3 0.7 0.40 140 比較例2 9300 30 0.6 0.35 145 Table 1 Type Weight average molecular weight ADR Depth of focus Limit resolution Heat resistance Mw sec / μm μm μm ° C. Example 1 4800 18 1.2 0.228 160 Example 2 18000 60 1.0 0.30 165 Example 3 2500 4 1.4 0.25 150 Example 4 9000 25 1.4 0.28 160 Example 5 8500 24 1.2 0.226 160 Example 6 12000 45 1.0 0.30 160 Example 7 15000 55 1.0 0.30 165 Example 8 6000 20 1.2 0.228 160 Example 9 7000 21 1.4 0.25 160 Comparative Example 1 2200 3 0.7 0.40 140 Comparative Example 2 9300 30 0 .6 0.35 145

【0037】[0037]

【発明の効果】本発明により、従来の方法では得られな
かった解像度に優れ、高耐熱性・高感度を両立するフォ
トレジスト用フェノール樹脂を提供することができる。
本発明のフェノール樹脂を使用することによって得られ
たフォトレジストは、高集積な半導体を製造する際のリ
ソグラフィーに使用され、半導体の今後のさらなる高集
積化に役立つものと期待される。
According to the present invention, it is possible to provide a phenolic resin for a photoresist which has excellent resolution which cannot be obtained by the conventional method and which has both high heat resistance and high sensitivity.
The photoresist obtained by using the phenolic resin of the present invention is used for lithography when manufacturing a highly integrated semiconductor, and is expected to be useful for further increasing the integration of semiconductors in the future.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2H025 AA01 AA02 AA10 AB16 AB17 AC01 AD03 BE01 BJ10 CB28 CB55 EA10 FA01 FA03 FA17 4J033 CA02 CA03 CA11 CA12 CA29 CB01 CB04 CB25 CC07 CC09 CC14 HA12 HA13 HB10  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H025 AA01 AA02 AA10 AB16 AB17 AC01 AD03 BE01 BJ10 CB28 CB55 EA10 FA01 FA03 FA17 4J033 CA02 CA03 CA11 CA12 CA29 CB01 CB04 CB25 CC07 CC09 CC14 HA12 HA13 HB10

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 3官能性以上のフェノール類(P1)及
びアルデヒド類(A)を塩基性触媒の存在下、pH7〜
12で反応(一次反応)させて得たレゾール樹脂に、フ
ェノール類(P2)と酸触媒を添加してpH0.1〜6
に調整し、さらに反応(二次反応)させて得られるノボ
ラック型フェノール樹脂で、GPC測定によるポリスチ
レン換算の重量平均分子量が、一次反応終了時が100
〜5000で二次反応終了時が1500〜20000で
あることを特徴とするフォトレジスト用ノボラック型フ
ェノール樹脂の製造方法。
1. A phenol (P1) and an aldehyde (A) having a functionality of 3 or more are converted to a phenol (P) having a pH of 7 or more in the presence of a basic catalyst.
A phenol (P2) and an acid catalyst are added to the resole resin obtained by the reaction (primary reaction)
And a novolak-type phenol resin obtained by a further reaction (secondary reaction). The weight average molecular weight in terms of polystyrene measured by GPC measurement is 100 at the end of the primary reaction.
A method for producing a novolak type phenolic resin for photoresist, wherein the secondary reaction is completed at a temperature of from 5,000 to 5,000 at the end of the secondary reaction.
【請求項2】 P1がフェノール、メタクレゾール、
3,5−キシレノールのうち1種以上からなり、P2が
パラクレゾール、2,3−キシレノール、2,4−キシ
レノール、2,5−キシレノール、3,4−キシレノー
ル、2,6−キシレノール、3,5−キシレノール、
2,3,5−トリメチルフェノール、2、3、6−トリ
メチルフェノールのうち1種以上からなり、Aがホルム
アルデヒド及び/又はパラホルムアルデヒドからなる請
求項1記載のフォトレジスト用ノボラック型フェノール
樹脂の製造方法。
2. P1 is phenol, meta-cresol,
P2 consists of one or more of 3,5-xylenol, and P2 is paracresol, 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 3,4-xylenol, 2,6-xylenol, 5-xylenol,
2. The method for producing a novolak type phenolic resin for a photoresist according to claim 1, comprising at least one of 2,3,5-trimethylphenol, 2,3,6-trimethylphenol, and A comprising formaldehyde and / or paraformaldehyde. .
【請求項3】 一次反応時の塩基性触媒が第3級アミン
類で、二次反応時の酸触媒が有機カルボン酸である請求
項1記載のフォトレジスト用ノボラック型フェノール樹
脂の製造方法。
3. The method for producing a novolak type phenol resin for a photoresist according to claim 1, wherein the basic catalyst at the time of the primary reaction is a tertiary amine, and the acid catalyst at the time of the secondary reaction is an organic carboxylic acid.
【請求項4】 P1とP2のモル比率(P1/P2)が
0.2〜3.0である請求項1記載のフォトレジスト用
ノボラック型フェノール樹脂の製造方法。
4. The method according to claim 1, wherein the molar ratio (P1 / P2) of P1 and P2 is from 0.2 to 3.0.
【請求項5】 一次反応時のアルデヒド類(A)とフェ
ノール類(P1)のモル比率(A/P1)が0.5〜
3.0であり、二次反応時のアルデヒド類(A)とフェ
ノール類(P1)及びフェノール類(P2)とのモル比
率(A/P1+P2)が0.2〜1.5であることを特
徴とする請求項1記載のフォトレジスト用ノボラック型
フェノール樹脂の製造方法。
5. The molar ratio (A / P1) of the aldehyde (A) to the phenol (P1) in the primary reaction is 0.5 to 5.
3.0, and the molar ratio (A / P1 + P2) of the aldehyde (A) to the phenol (P1) and the phenol (P2) in the secondary reaction is 0.2 to 1.5. The method for producing a novolak-type phenol resin for a photoresist according to claim 1.
JP13233099A 1999-05-13 1999-05-13 Method for producing phenolic resin for photoresist Expired - Lifetime JP3596855B2 (en)

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JP3596855B2 JP3596855B2 (en) 2004-12-02

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