KR102066814B1 - Method of purifying cresols, method of producing novolak resin for photosensitive resin composition and photosensitive resin composition - Google Patents

Method of purifying cresols, method of producing novolak resin for photosensitive resin composition and photosensitive resin composition Download PDF

Info

Publication number
KR102066814B1
KR102066814B1 KR1020190082094A KR20190082094A KR102066814B1 KR 102066814 B1 KR102066814 B1 KR 102066814B1 KR 1020190082094 A KR1020190082094 A KR 1020190082094A KR 20190082094 A KR20190082094 A KR 20190082094A KR 102066814 B1 KR102066814 B1 KR 102066814B1
Authority
KR
South Korea
Prior art keywords
cresol
photosensitive resin
resin composition
novolak resin
fractionated
Prior art date
Application number
KR1020190082094A
Other languages
Korean (ko)
Other versions
KR20190086638A (en
Inventor
도시키 다케즈츠미
마사시 다나카
Original Assignee
도쿄 오카 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄 오카 고교 가부시키가이샤 filed Critical 도쿄 오카 고교 가부시키가이샤
Publication of KR20190086638A publication Critical patent/KR20190086638A/en
Application granted granted Critical
Publication of KR102066814B1 publication Critical patent/KR102066814B1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C37/00Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
    • C07C37/68Purification; separation; Use of additives, e.g. for stabilisation
    • C07C37/685Processes comprising at least two steps in series
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C37/00Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
    • C07C37/68Purification; separation; Use of additives, e.g. for stabilisation
    • C07C37/86Purification; separation; Use of additives, e.g. for stabilisation by treatment giving rise to a chemical modification
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C37/00Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
    • C07C37/68Purification; separation; Use of additives, e.g. for stabilisation
    • C07C37/70Purification; separation; Use of additives, e.g. for stabilisation by physical treatment
    • C07C37/74Purification; separation; Use of additives, e.g. for stabilisation by physical treatment by distillation
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C37/00Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
    • C07C37/68Purification; separation; Use of additives, e.g. for stabilisation
    • C07C37/88Use of additives, e.g. for stabilisation
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/02Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring monocyclic with no unsaturation outside the aromatic ring
    • C07C39/06Alkylated phenols
    • C07C39/07Alkylated phenols containing only methyl groups, e.g. cresols, xylenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/02Condensation polymers of aldehydes or ketones with phenols only of ketones
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/12Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with monohydric phenols having only one hydrocarbon substituent ortho on para to the OH group, e.g. p-tert.-butyl phenol
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Phenolic Resins Or Amino Resins (AREA)

Abstract

타르 증류에 의해 얻어진 분류 크레졸을 정제해 감광성 수지 조성물용으로서 바람직한 노볼락 수지를 제조 가능하게 하는 크레졸류의 정제 방법, 그 정제 방법에 의해 정제된 정제 크레졸을 이용한 감광성 수지 조성물용 노볼락 수지의 제조 방법, 및 그 제조 방법에 의해 제조된 노볼락 수지를 함유하는 감광성 수지 조성물을 제공한다.
본 발명에 관한 크레졸류의 정제 방법은 타르 증류에 의해 얻어진 분류 크레졸 중의 염기성 물질을 제거하는 제거 공정을 포함한다. 이 제거 공정에서는 분류 크레졸을 산성 물질의 수용액으로 세정하거나, 또는 분류 크레졸에 산성 물질을 첨가한 후, 재증류한다.
Purification method of the cresols which refine | requires the fractionation cresol obtained by tar distillation, and makes it possible to manufacture the novolak resin suitable for the photosensitive resin composition, and manufacture of the novolak resin for photosensitive resin compositions using the refined tablet cresol refined by the purification method. The method and the photosensitive resin composition containing the novolak resin manufactured by the manufacturing method are provided.
The method for purifying cresols according to the present invention includes a removing step of removing basic substances in the fractionated cresol obtained by tar distillation. In this removal step, the fractionated cresol is washed with an aqueous solution of an acidic substance or the acidic substance is added to the fractionated cresol and then distilled again.

Description

크레졸류의 정제 방법, 감광성 수지 조성물용 노볼락 수지의 제조 방법, 및 감광성 수지 조성물{METHOD OF PURIFYING CRESOLS, METHOD OF PRODUCING NOVOLAK RESIN FOR PHOTOSENSITIVE RESIN COMPOSITION AND PHOTOSENSITIVE RESIN COMPOSITION}METHOD OF PURIFYING CRESOLS, METHOD OF PRODUCING NOVOLAK RESIN FOR PHOTOSENSITIVE RESIN COMPOSITION AND PHOTOSENSITIVE RESIN COMPOSITION}

본 발명은 감광성 수지 조성물용 노볼락 수지의 제조에 이용되는 크레졸류의 정제 방법, 그 정제 방법에 의해 정제된 정제 크레졸을 이용한 감광성 수지 조성물용 노볼락 수지의 제조 방법, 및 그 제조 방법에 의해 제조된 노볼락 수지를 함유하는 감광성 수지 조성물에 관한 것이다.This invention is manufactured by the refinement method of the cresols used for manufacture of the novolak resin for photosensitive resin compositions, the manufacturing method of the novolak resin for photosensitive resin compositions using the refined cresol refine | purified by the refinement method, and its manufacturing method It relates to the photosensitive resin composition containing the novolak resin.

종래 노볼락 수지와 퀴논 디아지드기 함유 화합물을 함유하는 포지티브형의 감광성 수지 조성물은 감도, 해상성, 내열성이 뛰어난 재료라고 하여 반도체의 집적 회로(IC)의 제조 등의 분야에서 널리 실용에 제공되고 있다.A positive photosensitive resin composition containing a novolak resin and a quinone diazide group-containing compound is widely used in fields such as the manufacture of integrated circuits (ICs) of semiconductors because it is a material having excellent sensitivity, resolution, and heat resistance. have.

이 중 노볼락 수지로는 크레졸류와 알데히드류 및/또는 케톤류의 축합 반응에 의해 합성되는 것이 일반적으로 이용되고 있다. 또, 크레졸류로는 화학 합성한 것이 일반적으로 이용되고 있다. 예를 들면, 크레졸의 3종의 이성체 중 o-크레졸은 페놀 및 메탄올을 원료로 하는 페놀 메틸화법에 의해 제조할 수 있다. 또, m-크레졸 및 p-크레졸은 톨루엔 및 프로필렌으로부터 얻어지는 시멘을 산화하는 톨루엔 이소프로필화법(시멘법)에 의해 제조할 수 있다.Among these, novolak resins are generally synthesized by the condensation reaction between cresols, aldehydes and / or ketones. As cresols, chemically synthesized ones are generally used. For example, o-cresol among three isomers of cresol can be manufactured by the phenol methylation method which uses phenol and methanol as a raw material. In addition, m-cresol and p-cresol can be manufactured by the toluene isopropylation method (cymen method) which oxidizes the cement obtained from toluene and propylene.

일본 특개 평9-53080호 공보Japanese Patent Application Laid-Open No. 9-53080

그런데, 크레졸류는 콜타르 중에 타르산으로서 포함되어 있어 콜타르의 증류·정제에 의해서도 얻을 수 있다. 그러나, 콜타르 중에는 타르 염기로서 피리딘, 메틸 피리딘, 아닐린 등의 염기성 물질도 포함되어 있어 이것들이 분류 크레졸 중에 잔류해 버리는 것이 알려져 있다. 이에, 이와 같은 염기성 물질을 제거하는 방법이 많이 제안되고 있다. 예를 들면 특허문헌 1에서는 타르산에 수산화 알칼리의 수용액을 가해 타르산염의 수용액으로 하고, 이 수용액을 활성탄과 접촉시킴으로써 타르 염기 등의 불순물을 흡착 제거하는 방법이 제안되고 있다.By the way, cresols are contained in coal tar as taric acid, and can also be obtained by distillation and refine | purification of coal tar. However, coal tar contains basic substances such as pyridine, methyl pyridine and aniline as tar bases, and these are known to remain in fractionated cresols. Accordingly, many methods for removing such basic substances have been proposed. For example, Patent Literature 1 proposes a method of adsorbing and removing impurities such as tar base by adding an aqueous solution of alkali hydroxide to taric acid to form an aqueous solution of tartrate, and contacting the aqueous solution with activated carbon.

그러나, 본 발명자들의 검토에 따르면, 크레졸류를 이용해 제조한 노볼락 수지를 감광성 수지 조성물에 이용하려면 분류 크레졸 중의 염기성 물질을 거의 완전히 제거할 필요가 있어, 특허문헌 1과 같은 종래의 방법으로는 불충분하다는 것이 판명되었다.However, according to the studies of the present inventors, in order to use the novolak resin prepared using cresols for the photosensitive resin composition, it is necessary to almost completely remove the basic substance in the classification cresol, and is insufficient by the conventional method such as Patent Document 1. It turned out.

본 발명은 이와 같은 종래의 실정을 감안해 이루어진 것으로, 타르 증류에 의해 얻어진 분류 크레졸을 정제해 감광성 수지 조성물용으로서 바람직한 노볼락 수지를 제조 가능하게 하는 크레졸류의 정제 방법, 그 정제 방법에 의해 정제된 정제 크레졸을 이용한 감광성 수지 조성물용 노볼락 수지의 제조 방법, 및 그 제조 방법에 의해 제조된 노볼락 수지를 함유하는 감광성 수지 조성물을 제공하는 것을 목적으로 한다.This invention is made | formed in view of such a conventional situation, The refine | purification method of the cresols which refine | purifies the fractionation cresol obtained by tar distillation, and makes it possible to manufacture the novolak resin suitable for the photosensitive resin composition, and refine | purified by the purification method It is an object to provide a method for producing a novolak resin for a photosensitive resin composition using a tablet cresol, and a photosensitive resin composition containing a novolak resin produced by the production method.

본 발명자들은 상기 목적을 달성하기 위해 열심히 연구를 거듭했다. 그 결과, 타르 증류에 의해 얻어진 분류 크레졸 중의 염기성 물질을 특정한 방법으로 제거함으로써 감광성 수지 조성물용으로서 바람직한 노볼락 수지가 제조 가능하게 되는 것을 알아내어 본 발명을 완성하기에 이르렀다. 구체적으로는 본 발명은 이하와 같은 것을 제공한다.The present inventors earnestly studied to achieve the above object. As a result, it was found out that the novolak resin suitable for the photosensitive resin composition can be manufactured by removing the basic substance in the fractionated cresol obtained by tar distillation by a specific method, thereby completing the present invention. Specifically, the present invention provides the following.

본 발명의 제 1 태양은 감광성 수지 조성물용 노볼락 수지의 제조에 이용되는 크레졸류의 정제 방법으로서, 타르 증류에 의해 얻어진 분류 크레졸 중의 염기성 물질을 제거하는 제거 공정을 포함하고, 이 제거 공정에서는 상기 분류 크레졸을 산성 수용액으로 세정하거나, 또는 상기 분류 크레졸에 산성 물질을 첨가한 후, 재증류하는 것을 특징으로 하는 정제 방법이다.The 1st aspect of this invention is a refinement | purification method of cresols used for manufacture of the novolak resin for photosensitive resin compositions, Comprising: The removal process which removes the basic substance in the fractionation cresol obtained by tar distillation, In this removal process, A fractionation cresol is washed with an acidic aqueous solution, or an acidic substance is added to the fractionation cresol and then distilled again.

본 발명의 제 2 태양은 감광성 수지 조성물용 노볼락 수지의 제조 방법으로서, 촉매의 존재 하, 크레졸류와 알데히드류 및/또는 케톤류를 반응시키는 반응 공정을 포함하고, 상기 크레졸류가 본 발명의 제 1 태양과 관련된 정제 방법에 의해 정제된 정제 크레졸을 함유하는 것을 특징으로 하는 제조 방법이다.The 2nd aspect of this invention is a manufacturing method of the novolak resin for photosensitive resin compositions, Comprising: The reaction process of making cresol react with aldehydes and / or ketones in presence of a catalyst, The said cresol is the agent of this invention. It is a manufacturing method characterized by containing the refined cresol refine | purified by the refinement | purification method concerning 1 aspect.

본 발명의 제 3 태양은 본 발명의 제 2 태양과 관련된 제조 방법에 의해 제조된 노볼락 수지를 함유하는 것을 특징으로 하는 감광성 수지 조성물이다.The 3rd aspect of this invention is the photosensitive resin composition characterized by containing the novolak resin manufactured by the manufacturing method which concerns on the 2nd aspect of this invention.

본 발명에 따르면, 타르 증류에 의해 얻어진 분류 크레졸을 정제해 감광성 수지 조성물용으로서 바람직한 노볼락 수지를 제조 가능하게 하는 크레졸류의 정제 방법, 그 정제 방법에 의해 정제된 정제 크레졸을 이용한 감광성 수지 조성물용 노볼락 수지의 제조 방법, 및 그 제조 방법에 의해 제조된 노볼락 수지를 함유하는 감광성 수지 조성물을 제공할 수 있다.According to the present invention, there is provided a method for purifying cresols which purifies fractional cresol obtained by tar distillation to enable production of a novolak resin suitable for a photosensitive resin composition, and for photosensitive resin composition using tablet cresol purified by the purification method. The manufacturing method of a novolak resin, and the photosensitive resin composition containing the novolak resin manufactured by the manufacturing method can be provided.

<크레졸류의 정제 방법><Purification method of cresols>

본 발명에 관한 크레졸류의 정제 방법은 타르 증류에 의해 얻어진 분류 크레졸 중의 염기성 물질을 제거하는 제거 공정을 포함한다.The method for purifying cresols according to the present invention includes a removing step of removing basic substances in fractionated cresols obtained by tar distillation.

상기 분류 크레졸로는 특별히 한정되지 않고, 공지의 방법에 의해 얻어진 분류 크레졸을 이용할 수 있지만, 그 중에서도 m-크레졸 및 p-크레졸을 주성분으로 하는 m/p 혼합품은 염기성 물질의 함유량이 많은 경향이 있다. 이 때문에, 특히 m/p 혼합품을 이용했을 경우에 그 효과가 높다.The classification cresol is not particularly limited, and the classification cresol obtained by a known method can be used. Among these, m / p mixed products containing m-cresol and p-cresol as the main components tend to have a high content of basic substances. . For this reason, the effect is high especially when an m / p mixture is used.

염기성 물질을 제거하는 제 1 방법은 분류 크레졸을 산성 물질의 수용액으로 세정하는 것이다. 즉, 분류 크레졸과 산성 물질의 수용액을 혼합해, 분류 크레졸 중의 염기성 물질을 수상으로 이행시키고, 그 후, 분액함으로써 분류 크레졸 중의 염기성 물질을 제거할 수 있다.The first method of removing the basic substance is to wash the fractionated cresol with an aqueous solution of acidic substance. That is, the basic substance in the fractionated cresol can be removed by mixing the fractionated cresol and the aqueous solution of the acidic substance, transferring the basic substance in the fractionated cresol to the aqueous phase, and then separating the fractionated cresol.

산성 물질로는 염산, 황산, 질산, 인산 등의 무기산이나 옥살산, 아세트산 등의 유기산을 들 수 있지만, 무기산이 바람직하고, 무기산의 강산이 보다 바람직하며, 염산, 황산이 더욱 바람직하고, 염산이 가장 바람직하다. 또, 산성 물질의 농도는 분류 크레졸 중의 염기성 물질의 함유량에 따라서도 상이하지만, 통상은 0.1~20 질량%이고, 바람직하게는 0.5~15 질량%이다.Examples of the acidic substance include inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid and phosphoric acid, and organic acids such as oxalic acid and acetic acid, but inorganic acids are preferable, strong acids of inorganic acids are more preferable, hydrochloric acid and sulfuric acid are more preferable, and hydrochloric acid is most preferred. desirable. Moreover, although the density | concentration of an acidic substance changes also with content of the basic substance in fractional cresol, it is usually 0.1-20 mass%, Preferably it is 0.5-15 mass%.

분류 크레졸에 대한 산성 물질의 수용액의 양은 특별히 한정되지 않지만, 통상은 5~500 질량%이고, 바람직하게는 10~300 질량%이다.Although the quantity of the aqueous solution of the acidic substance with respect to a classification cresol is not specifically limited, Usually, it is 5-500 mass%, Preferably it is 10-300 mass%.

또한, 분액성을 향상시키기 위해 분류 크레졸에는 유기 용제를 혼합해 두는 것이 바람직하다. 유기 용제로는 아세트산 부틸, 톨루엔, 크실렌, 헥산, 헵탄, 시클로헥산 등을 들 수 있다. 유기 용제의 사용량은 특별히 한정되지 않지만, 통상은 분류 크레졸에 대해서 질량비로 0.5~5 배량이다.Moreover, in order to improve liquid separation property, it is preferable to mix an organic solvent with fractionation cresol. Examples of the organic solvent include butyl acetate, toluene, xylene, hexane, heptane, cyclohexane, and the like. Although the usage-amount of an organic solvent is not specifically limited, Usually, it is 0.5 to 5 times by mass ratio with respect to fractional cresol.

구체적인 분액 방법은 연속법이어도 회분법이어도 된다. 연속법은 믹서 세틀러형이나 탑형의 다단 추출 장치를 이용해 분류 크레졸(또는 분류 크레졸과 유기 용제의 혼합 용제)과 산성 물질의 수용액을 연속적으로 피드해 분류 크레졸 중의 염기성 물질을 추출 제거하는 것이다. 한편, 회분법은 분류 크레졸(또는 분류 크레졸과 유기 용제의 혼합 용제)과 산성 물질의 수용액을 혼합 교반한 후, 정치하고 분액하는 방법이다.The specific separation method may be a continuous method or a batch method. The continuous method uses a mixer settler or tower type multistage extraction device to continuously feed an aqueous fraction of the fractionated cresol (or a mixed solvent of the fractionated cresol and an organic solvent) and an acidic substance to extract and remove the basic substances in the fractionated cresol. On the other hand, the batch method is a method of mixing and stirring a fractionated cresol (or a mixed solvent of fractionated cresol and an organic solvent) and an aqueous solution of an acidic substance, and then standing still and separating the fraction.

또, 염기성 물질을 제거하는 제 2 방법은 분류 크레졸에 산성 물질을 첨가한 후, 재증류하는 것이다. 즉, 분류 크레졸 중에 산성 물질을 첨가함으로써 염을 형성시킨 후, 통상의 방법에 따라서 재증류함으로써 분류 크레졸 중의 염기성 물질을 제거할 수 있다.The second method of removing the basic substance is to re-distill the acid substance after adding the acidic substance to the fractionated cresol. That is, the salt can be formed by adding an acidic substance in the fractionated cresol, and then the basic substance in the fractionated cresol can be removed by re-distillation according to a conventional method.

첨가하는 산성 물질로는 염산, 황산, 질산, 인산 등의 무기산이나 옥살산, 아세트산 등의 유기산을 들 수 있지만, 무기산이 바람직하고, 염산, 황산이 보다 바람직하며, 염산이 가장 바람직하다. 또, 산성 물질의 첨가량은 분류 크레졸 중의 염기성 물질의 함유량에 따라서도 상이하지만, 통상은 0.5~20 몰%이고, 바람직하게는 1.0~10 몰%이다.Examples of the acidic substance to be added include inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid and phosphoric acid, and organic acids such as oxalic acid and acetic acid. Inorganic acids are preferred, hydrochloric acid and sulfuric acid are more preferred, and hydrochloric acid is most preferred. Moreover, although the addition amount of an acidic substance changes also with content of the basic substance in fractional cresol, it is 0.5-20 mol% normally, Preferably it is 1.0-10 mol%.

분류 크레졸을 산성 물질의 수용액으로 세정하는 횟수(분액 횟수)나 분류 크레졸에 산성 물질을 첨가한 후, 재증류하는 횟수는 분류 크레졸 중의 염기성 물질의 함유량이나 최종 목표 농도에 따라 적절히 정해진다. 본 발명자들의 검토에 따르면, 분류 크레졸 중에 존재하는 염기성 물질 중에서도 피리딘 및 2-메틸 피리딘의 함유량이 현저하게 많기 때문에 피리딘 및 2-메틸 피리딘의 함유량이 각각 2 ppm 미만이 될 때까지, 바람직하게는 1 ppm 미만이 될 때까지, 보다 바람직하게는 0 ppm(즉, 검출 한계 미만)이 될 때까지 제거 공정을 계속하는 것이 바람직하다.The number of times the fractionated cresol is washed with an aqueous solution of an acidic substance (the number of separations) or the number of times of re-distillation after adding the acidic substance to the fractionated cresol is appropriately determined according to the content of the basic substance in the fractionated cresol or the final target concentration. According to the inventors' review, since the content of pyridine and 2-methyl pyridine is significantly higher among the basic substances present in the sorting cresol, until the content of pyridine and 2-methyl pyridine is less than 2 ppm each, preferably 1 It is desirable to continue the removal process until it is below ppm, more preferably below 0 ppm (ie below the detection limit).

또한, 본 발명에 관한 정제 방법은 염기성 물질의 제거 효율이 높기 때문에 종래의 방법보다도 단시간에 염기성 물질을 거의 완전히 제거할 수 있다.In addition, the purification method according to the present invention has a high removal efficiency of the basic substance, and thus the basic substance can be almost completely removed in a shorter time than the conventional method.

<감광성 수지 조성물용 노볼락 수지의 제조 방법><The manufacturing method of the novolak resin for photosensitive resin composition>

본 발명에 관한 감광성 수지 조성물용 노볼락 수지의 제조 방법은 촉매의 존재 하, 크레졸류와 알데히드류 및/또는 케톤류를 반응시키는 반응 공정을 포함한다. 이 반응 공정에서는 크레졸류에 더해, 이 크레졸류 이외의 페놀류를 알데히드류 및/또는 케톤류와 반응시켜도 된다.The manufacturing method of the novolak resin for photosensitive resin compositions which concerns on this invention includes the reaction process of making cresol, aldehydes, and / or ketones react in presence of a catalyst. In this reaction step, in addition to cresols, phenols other than these cresols may be reacted with aldehydes and / or ketones.

상기 크레졸류로는 본 발명에 관한 정제 방법에 의해 정제된 정제 크레졸을 이용할 수 있다. 또, 감도 등의 여러 특성을 조정하기 위해 화학 합성에 의해 얻어진 크레졸류를 추가로 이용해도 된다. 일 실시태양에서는 이용되는 크레졸류의 50 질량% 이상이 본 발명에 관한 정제 방법에 의해 정제된 정제 크레졸이다.As the cresols, purified cresols purified by the purification method according to the present invention can be used. Moreover, in order to adjust various characteristics, such as a sensitivity, you may further use cresols obtained by chemical synthesis. In one embodiment, 50 mass% or more of cresols used are the refined cresol refine | purified by the refinement | purification method which concerns on this invention.

상기 크레졸류 이외의 페놀류로는 페놀;2,3-크실레놀, 2,4-크실레놀, 2,5-크실레놀, 2,6-크실레놀, 3,4-크실레놀, 3,5-크실레놀 등의 크실레놀류;o-에틸 페놀, m-에틸 페놀, p-에틸 페놀, 2-이소프로필 페놀, 3-이소프로필 페놀, 4-이소프로필 페놀, o-부틸 페놀, m-부틸 페놀, p-부틸 페놀, p-tert-부틸 페놀 등의 알킬 페놀류;2,3,5-트리메틸 페놀, 3,4,5-트리메틸 페놀 등의 트리알킬 페놀류;레조르시놀, 카테콜, 하이드로퀴논, 하이드로퀴논 모노메틸 에테르, 피로가롤, 플로로글리시놀 등의 다가 페놀류;알킬 레조르신, 알킬 카테콜, 알킬 하이드로퀴논 등의 알킬 다가 페놀류(어떠한 알킬기도 탄소수 1~4이다);α-나프톨, β-나프톨, 히드록시디페닐, 비스페놀 A 등을 들 수 있다. 이들 페놀류는 단독으로 이용해도 되고, 2종 이상을 조합해 이용해도 된다. 이들 페놀류 중에서는 2,5-크실레놀, 3,5-크실레놀, 2,3,5-트리메틸 페놀이 바람직하다.Phenols other than the above cresols include phenol; 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, Xylenols such as 3,5-xylenol; o-ethyl phenol, m-ethyl phenol, p-ethyl phenol, 2-isopropyl phenol, 3-isopropyl phenol, 4-isopropyl phenol, o-butyl phenol alkyl phenols such as m-butyl phenol, p-butyl phenol and p-tert-butyl phenol; trialkyl phenols such as 2,3,5-trimethyl phenol and 3,4,5-trimethyl phenol; resorcinol and cate Polyhydric phenols such as chol, hydroquinone, hydroquinone monomethyl ether, pyrogarol, and phloroglycinol; alkyl polyhydric phenols such as alkyl resorcin, alkyl catechol, alkyl hydroquinone (any alkyl group also has 1 to 4 carbon atoms) Α-naphthol, β-naphthol, hydroxydiphenyl, bisphenol A and the like. These phenols may be used independently and may be used in combination of 2 or more type. Among these phenols, 2,5-xylenol, 3,5-xylenol, and 2,3,5-trimethyl phenol are preferable.

상기 알데히드류로는 포름알데히드, 파라포름알데히드, 아세트알데히드, 프로피온알데히드, 부틸알데히드, 트리메틸 아세트알데히드, 아크롤레인, 크로톤알데히드, 시클로헥산 알데히드, 푸르푸랄, 푸릴아크롤레인, 벤즈알데히드, 테레프탈알데히드, 페닐아세트알데히드, α-페닐프로필알데히드, β-페닐프로필알데히드, o-히드록시 벤즈알데히드, m-히드록시 벤즈알데히드, p-히드록시 벤즈알데히드, o-메틸 벤즈알데히드, m-메틸 벤즈알데히드, p-메틸 벤즈알데히드, o-클로로 벤즈알데히드, m-클로로 벤즈알데히드, p-클로로 벤즈알데히드, 숙신 알데히드 등을 들 수 있다. 이들 알데히드류는 단독으로 이용해도 되고, 2종 이상을 조합해 이용해도 된다. 이들 알데히드류 중에서는 입수의 용이함에서 포름알데히드가 바람직하다.Examples of the aldehydes include formaldehyde, paraformaldehyde, acetaldehyde, propionaldehyde, butylaldehyde, trimethyl acetaldehyde, acrolein, crotonaldehyde, cyclohexane aldehyde, furfural, furyl acrolein, benzaldehyde, terephthalaldehyde, terealdehyde, terealdehyde -Phenylpropylaldehyde, β-phenylpropylaldehyde, o-hydroxy benzaldehyde, m-hydroxy benzaldehyde, p-hydroxy benzaldehyde, o-methyl benzaldehyde, m-methyl benzaldehyde, p-methyl benzaldehyde, o-chloro benzaldehyde, m -Chloro benzaldehyde, p-chloro benzaldehyde, succinic aldehyde and the like. These aldehydes may be used independently or may be used in combination of 2 or more type. Among these aldehydes, formaldehyde is preferable from the availability.

상기 케톤류로는 아세톤, 메틸에틸케톤, 디에틸케톤, 디페닐케톤 등을 들 수 있다. 이들 케톤류는 단독으로 이용해도 되고, 2종 이상을 조합해 이용해도 된다.Acetone, methyl ethyl ketone, diethyl ketone, diphenyl ketone, etc. are mentioned as said ketones. These ketones may be used independently or may be used in combination of 2 or more type.

상기 산 촉매로는 염산, 황산, 질산, 인산, 아인산 등의 무기산류;포름산, 옥살산, 아세트산, 디에틸 황산, 파라톨루엔 설폰산 등의 유기산류;아세트산 아연 등의 금속 염류 등을 들 수 있다. 이들 산 촉매는 단독으로 이용해도 되고, 2종 이상을 조합해 이용해도 된다.Examples of the acid catalyst include inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid and phosphorous acid; organic acids such as formic acid, oxalic acid, acetic acid, diethyl sulfuric acid, and paratoluene sulfonic acid; and metal salts such as zinc acetate. These acid catalysts may be used independently or may be used in combination of 2 or more type.

이와 같이 하여 얻어지는 노볼락 수지의 질량 평균 분자량은 특별히 한정되지 않지만, 2000~30000인 것이 바람직하고, 3000~25000인 것이 보다 바람직하다. 질량 평균 분자량을 2000 이상으로 함으로써, 조제한 감광성 수지 조성물의 성막성이 양호해지고, 내열성도 양호해진다. 또, 질량 평균 분자량을 30000 이하로 함으로써, 조제한 감광성 수지 조성물의 감도가 양호해진다.Although the mass average molecular weight of the novolak resin obtained in this way is not specifically limited, It is preferable that it is 2000-30000, and it is more preferable that it is 3000-25000. By setting the mass average molecular weight to 2000 or more, film formation of the prepared photosensitive resin composition is good, and heat resistance is also good. Moreover, the sensitivity of the prepared photosensitive resin composition becomes favorable by making a mass mean molecular weight 30000 or less.

또한, 노볼락 수지의 질량 평균 분자량은 적절히 분별 조작을 실시해 저분자량의 것을 제거함으로써 조정할 수도 있다.In addition, the mass average molecular weight of novolak resin can also be adjusted by performing classification operation suitably, and removing the thing of low molecular weight.

또, 노볼락 수지의 분산도[질량 평균 분자량/수평균 분자량(Mw/Mn)]는 5 이하인 것이 바람직하고, 3 이하인 것이 보다 바람직하다. 분산도를 5 이하로 함으로써, 조제한 감광성 수지 조성물을 이용해 수지 패턴을 형성했을 경우의 패턴 형상이 양호한 것이 된다. 또한, 분산도는 실질적으로는 1 이상이다.Moreover, it is preferable that it is 5 or less, and, as for the dispersion degree [mass average molecular weight / number average molecular weight (Mw / Mn)] of novolak resin, it is more preferable that it is three or less. By setting dispersion degree to 5 or less, the pattern shape at the time of forming a resin pattern using the prepared photosensitive resin composition becomes favorable. In addition, dispersion degree is substantially one or more.

<감광성 수지 조성물><Photosensitive resin composition>

본 발명에 관한 감광성 수지 조성물은 본 발명에 관한 제조 방법에 의해 제조된 노볼락 수지를 함유한다. 노볼락 수지의 함유량은 감광성 수지 조성물의 고형분에 대해서 50~95 질량%인 것이 바람직하고, 60~90 질량%인 것이 보다 바람직하다. 상기의 범위로 함으로써, 현상성의 밸런스를 취하기 쉬운 경향이 있다.The photosensitive resin composition which concerns on this invention contains the novolak resin manufactured by the manufacturing method which concerns on this invention. It is preferable that it is 50-95 mass% with respect to solid content of the photosensitive resin composition, and, as for content of novolak resin, it is more preferable that it is 60-90 mass%. By setting it as said range, there exists a tendency which is easy to take a balance of developability.

또, 본 발명에 관한 감광성 수지 조성물은 감광제로서 퀴논 디아지드기 함유 화합물을 함유한다. 이 퀴논 디아지드기 함유 화합물로는 페놀 화합물과 퀴논 디아지드기 함유 설폰산 화합물의 완전 에스테르화물이나 부분 에스테르화물이 바람직하다. 이와 같은 퀴논 디아지드기 함유 화합물은 페놀 화합물과 퀴논 디아지드기 함유 설폰산 화합물을 디옥산 등의 적당한 용제 중에서 트리에탄올 아민, 탄산 알칼리, 탄산수소 알칼리 등의 알칼리의 존재 하에서 축합시켜 완전 에스테르화 또는 부분 에스테르화 함으로써 얻을 수 있다.Moreover, the photosensitive resin composition which concerns on this invention contains a quinone diazide group containing compound as a photosensitive agent. As this quinone diazide group containing compound, the complete ester and partial ester compound of a phenol compound and a quinone diazide group containing sulfonic acid compound are preferable. Such quinone diazide group-containing compounds are fully esterified by partially condensing a phenol compound and a quinone diazide group-containing sulfonic acid compound in the presence of alkalis such as triethanol amine, alkali carbonate, and hydrogen carbonate in a suitable solvent such as dioxane. It can be obtained by esterification.

상기 페놀 화합물로는 하기 식 (1)로 나타내는 화합물이 바람직하다.As said phenolic compound, the compound represented by following formula (1) is preferable.

Figure 112019069730155-pat00001
Figure 112019069730155-pat00001

상기 식 (1) 중, R1~R8은 각각 독립적으로 수소 원자, 할로겐 원자, 탄소수 1~6의 알킬기, 탄소수 3~6의 시클로알킬기, 또는 탄소수 1~6의 알콕시기를 나타낸다. R9~R11은 각각 독립적으로 수소 원자 또는 탄소수 1~6의 알킬기를 나타낸다. Q는 수소 원자, 탄소수 1~6의 알킬기, R9와 결합한 탄소수 3~6의 시클로알킬기, 또는 하기 식 (2)로 나타내는 기를 나타낸다. a, b는 각각 독립적으로 1~3의 정수를 나타내고, d, n는 각각 독립적으로 0~3의 정수를 나타낸다.The formula (1) of, R 1 ~ R 8 each independently represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or alkoxy of 1 to 6 carbon atoms. R 9 to R 11 each independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. Q represents a hydrogen atom, a C1-C6 alkyl group, a C3-C6 cycloalkyl group couple | bonded with R <9> , or group represented by following formula (2). a and b respectively independently represent the integer of 1-3, d and n respectively independently represent the integer of 0-3.

Figure 112019069730155-pat00002
Figure 112019069730155-pat00002

상기 식 (2) 중, R12, R13은 각각 독립적으로 수소 원자, 할로겐 원자, 탄소수 1~6의 알킬기, 탄소수 3~6의 시클로알킬기, 또는 탄소수 1~6의 알콕시기를 나타낸다. c는 1~3의 정수를 나타낸다.In said formula (2), R <12> , R <13> represents a hydrogen atom, a halogen atom, a C1-C6 alkyl group, a C3-C6 cycloalkyl group, or a C1-C6 alkoxy group each independently. c represents the integer of 1-3.

이 페놀 화합물의 구체적인 예로는 2,3,4-트리히드록시벤조페논, 2,3,4,4'-테트라히드록시벤조페논 등의 폴리히드록시벤조페논류;트리스(4-히드록시페닐)메탄, 비스(4-히드록시-3-메틸페닐)-2-히드록시페닐메탄, 비스(4-히드록시-2,3,5-트리메틸페닐)-2-히드록시페닐메탄, 비스(4-히드록시-3,5-디메틸페닐)-4-히드록시페닐메탄, 비스(4-히드록시-3,5-디메틸페닐)-3-히드록시페닐메탄, 비스(4-히드록시-3,5-디메틸페닐)-2-히드록시페닐메탄, 비스(4-히드록시-2,5-디메틸페닐)-4-히드록시페닐메탄, 비스(4-히드록시-2,5-디메틸페닐)-3-히드록시페닐메탄, 비스(4-히드록시-2,5-디메틸페닐)-2-히드록시페닐메탄, 비스(4-히드록시-3,5-디메틸페닐)-3,4-디히드록시페닐메탄, 비스(4-히드록시-2,5-디메틸페닐)-3,4-디히드록시페닐메탄, 비스(4-히드록시-2,5-디메틸페닐)-2,4-디히드록시페닐메탄, 비스(4-히드록시페닐)-3-메톡시-4-히드록시페닐메탄, 비스(5-시클로헥실-4-히드록시-2-메틸페닐)-4-히드록시페닐메탄, 비스(5-시클로헥실-4-히드록시-2-메틸페닐)-3-히드록시페닐메탄, 비스(5-시클로헥실-4-히드록시-2-메틸페닐)-2-히드록시페닐메탄, 비스(5-시클로헥실-4-히드록시-2-메틸페닐)-3,4-디히드록시페닐메탄, 4,4'-[(2-히드록시페닐)메틸렌]비스(2,3,6-트리메틸페놀), 5,5'-디시클로헥실-4,4',3",4"-테트라히드록시-2,2'-디메틸 트리페닐메탄 등의 트리스페놀형 화합물;Specific examples of this phenol compound include polyhydroxybenzophenones such as 2,3,4-trihydroxybenzophenone and 2,3,4,4'-tetrahydroxybenzophenone; tris (4-hydroxyphenyl) Methane, bis (4-hydroxy-3-methylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy-2,3,5-trimethylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy Hydroxy-3,5-dimethylphenyl) -4-hydroxyphenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -3-hydroxyphenylmethane, bis (4-hydroxy-3,5- Dimethylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -4-hydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -3- Hydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -3,4-dihydroxyphenyl Methane, bis (4-hydroxy-2,5-dimethylphenyl) -3,4-dihydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -2,4-dihydroxyphenyl Carbon, bis (4-hydroxyphenyl) -3-methoxy-4-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -4-hydroxyphenylmethane, bis (5 -Cyclohexyl-4-hydroxy-2-methylphenyl) -3-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -2-hydroxyphenylmethane, bis (5-cyclo Hexyl-4-hydroxy-2-methylphenyl) -3,4-dihydroxyphenylmethane, 4,4 '-[(2-hydroxyphenyl) methylene] bis (2,3,6-trimethylphenol), 5 Trisphenol-type compounds such as 5'-dicyclohexyl-4,4 ', 3 ", 4" -tetrahydroxy-2,2'-dimethyl triphenylmethane;

2,4-비스(3,5-디메틸-4-히드록시벤질)-5-히드록시페놀, 2,6-비스(2,5-디메틸-4-히드록시 벤질)-4-메틸페놀 등의 리니어형 3핵체 페놀 화합물;2,4-bis (3,5-dimethyl-4-hydroxybenzyl) -5-hydroxyphenol, 2,6-bis (2,5-dimethyl-4-hydroxy benzyl) -4-methylphenol Linear trinuclear phenol compounds;

1,1-비스[3-(2-히드록시-5-메틸벤질)-4-히드록시-5-시클로헥실페닐]이소프로판, 비스[2,5-디메틸-3-(4-히드록시-5-메틸벤질)-4-히드록시페닐]메탄, 비스[2,5-디메틸-3-(4-히드록시벤질)-4-히드록시페닐]메탄, 비스[3-(3,5-디메틸-4-히드록시벤질)-4-히드록시-5-메틸페닐]메탄, 비스[3-(3,5-디메틸-4-히드록시벤질)-4-히드록시-5-에틸페닐]메탄, 비스[3-(3,5-디에틸-4-히드록시벤질)-4-히드록시-5-메틸페닐]메탄, 비스[3-(3,5-디에틸-4-히드록시벤질)-4-히드록시-5-에틸페닐]메탄, 비스[2-히드록시-3-(3,5-디메틸-4-히드록시벤질)-5-메틸페닐]메탄, 비스[2-히드록시-3-(2-히드록시-5-메틸벤질)-5-메틸페닐]메탄, 비스[4-히드록시-3-(2-히드록시-5-메틸벤질)-5-메틸페닐]메탄, 비스[2,5-디메틸-3-(2-히드록시-5-메틸 벤질)-4-히드록시페닐]메탄 등의 리니어형 4핵체 페놀 화합물;1,1-bis [3- (2-hydroxy-5-methylbenzyl) -4-hydroxy-5-cyclohexylphenyl] isopropane, bis [2,5-dimethyl-3- (4-hydroxy- 5-methylbenzyl) -4-hydroxyphenyl] methane, bis [2,5-dimethyl-3- (4-hydroxybenzyl) -4-hydroxyphenyl] methane, bis [3- (3,5-dimethyl -4-hydroxybenzyl) -4-hydroxy-5-methylphenyl] methane, bis [3- (3,5-dimethyl-4-hydroxybenzyl) -4-hydroxy-5-ethylphenyl] methane, bis [3- (3,5-diethyl-4-hydroxybenzyl) -4-hydroxy-5-methylphenyl] methane, bis [3- (3,5-diethyl-4-hydroxybenzyl) -4- Hydroxy-5-ethylphenyl] methane, bis [2-hydroxy-3- (3,5-dimethyl-4-hydroxybenzyl) -5-methylphenyl] methane, bis [2-hydroxy-3- (2 -Hydroxy-5-methylbenzyl) -5-methylphenyl] methane, bis [4-hydroxy-3- (2-hydroxy-5-methylbenzyl) -5-methylphenyl] methane, bis [2,5-dimethyl Linear tetranuclear phenol compounds such as -3- (2-hydroxy-5-methyl benzyl) -4-hydroxyphenyl] methane;

2,4-비스[2-히드록시-3-(4-히드록시벤질)-5-메틸벤질]-6-시클로헥실페놀, 2,4-비스[4-히드록시-3-(4-히드록시벤질)-5-메틸벤질]-6-시클로헥실페놀, 2,6-비스[2,5-디메틸-3-(2-히드록시-5-메틸벤질)-4-히드록시벤질]-4-메틸페놀 등의 리니어형 5핵체 페놀 화합물;2,4-bis [2-hydroxy-3- (4-hydroxybenzyl) -5-methylbenzyl] -6-cyclohexylphenol, 2,4-bis [4-hydroxy-3- (4-hydroxy Hydroxybenzyl) -5-methylbenzyl] -6-cyclohexylphenol, 2,6-bis [2,5-dimethyl-3- (2-hydroxy-5-methylbenzyl) -4-hydroxybenzyl] -4 Linear pentanuclear phenol compounds such as -methyl phenol;

비스(2,3,4-트리히드록시페닐)메탄, 비스(2,4-디히드록시페닐)메탄, 2,3,4-트리히드록시페닐-4'-히드록시페닐메탄, 2-(2,3,4-트리히드록시페닐)-2-(2',3',4'-트리히드록시페닐)프로판, 2-(2,4-디히드록시페닐)-2-(2',4'-디히드록시페닐)프로판, 2-(4-히드록시페닐)-2-(4'-히드록시페닐)프로판, 2-(3-플루오로-4-히드록시페닐)-2-(3'-플루오로-4'-히드록시페닐)프로판, 2-(2,4-디히드록시페닐)-2-(4'-히드록시페닐)프로판, 2-(2,3,4-트리히드록시페닐)-2-(4'-히드록시페닐)프로판, 2-(2,3,4-트리히드록시페닐)-2-(4'-히드록시-3',5'-디메틸페닐)프로판, 4,4'-[1-[4-[1-(4-히드록시페닐)-1-메틸에틸]페닐]에틸리덴]비스페놀, 4,4'-[1-[4-[2-[4-히드록시페닐]-2-프로필]페닐]에틸리덴]비스페놀 등의 비스페놀형 화합물;Bis (2,3,4-trihydroxyphenyl) methane, bis (2,4-dihydroxyphenyl) methane, 2,3,4-trihydroxyphenyl-4'-hydroxyphenylmethane, 2- ( 2,3,4-trihydroxyphenyl) -2- (2 ', 3', 4'-trihydroxyphenyl) propane, 2- (2,4-dihydroxyphenyl) -2- (2 ', 4'-dihydroxyphenyl) propane, 2- (4-hydroxyphenyl) -2- (4'-hydroxyphenyl) propane, 2- (3-fluoro-4-hydroxyphenyl) -2- ( 3'-fluoro-4'-hydroxyphenyl) propane, 2- (2,4-dihydroxyphenyl) -2- (4'-hydroxyphenyl) propane, 2- (2,3,4-tri Hydroxyphenyl) -2- (4'-hydroxyphenyl) propane, 2- (2,3,4-trihydroxyphenyl) -2- (4'-hydroxy-3 ', 5'-dimethylphenyl) Propane, 4,4 '-[1- [4- [1- (4-hydroxyphenyl) -1-methylethyl] phenyl] ethylidene] bisphenol, 4,4'-[1- [4- [2- Bisphenol-type compounds such as [4-hydroxyphenyl] -2-propyl] phenyl] ethylidene] bisphenol;

1-[1-(4-히드록시페닐)이소프로필]-4-[1,1-비스(4-히드록시페닐)에틸]벤젠, 1-[1-(3-메틸-4-히드록시페닐)이소프로필]-4-[1,1-비스(3-메틸-4-히드록시페닐)에틸]벤젠 등의 다핵 분기형 화합물;1- [1- (4-hydroxyphenyl) isopropyl] -4- [1,1-bis (4-hydroxyphenyl) ethyl] benzene, 1- [1- (3-methyl-4-hydroxyphenyl Multinuclear branched compounds such as) isopropyl] -4- [1,1-bis (3-methyl-4-hydroxyphenyl) ethyl] benzene;

1,1-비스(4-히드록시페닐)시클로헥산 등의 축합형 페놀 화합물;등을 들 수 있다.Condensed-type phenol compounds, such as 1, 1-bis (4-hydroxyphenyl) cyclohexane; These etc. are mentioned.

이들 페놀 화합물은 단독으로 이용해도 되고, 2종 이상을 조합해 이용해도 된다.These phenolic compounds may be used independently and may be used in combination of 2 or more type.

상기 퀴논 디아지드기 함유 설폰산 화합물로는 나프토퀴논-1,2-디아지드-5-설폰산, 나프토퀴논-1,2-디아지드-4-설폰산, 오르토안트라퀴논 디아지드설폰산 등을 들 수 있다.As the quinone diazide group-containing sulfonic acid compound, naphthoquinone-1,2-diazide-5-sulfonic acid, naphthoquinone-1,2-diazide-4-sulfonic acid, orthoanthraquinone diazidesulfonic acid Etc. can be mentioned.

퀴논 디아지드기 함유 화합물의 함유량은 노볼락 수지 100 질량부에 대해 5~50 질량부인 것이 바람직하고, 5~25 질량부인 것이 보다 바람직하다. 상기의 범위로 함으로써, 감광성 수지 조성물의 감도가 양호해진다.It is preferable that it is 5-50 mass parts with respect to 100 mass parts of novolak resin, and, as for content of a quinone diazide group containing compound, it is more preferable that it is 5-25 mass parts. By setting it as said range, the sensitivity of the photosensitive resin composition will become favorable.

또, 본 발명에 관한 감광성 수지 조성물은 증감제로서 상기 페놀 화합물을 함유하는 것이 바람직하다. 페놀 화합물의 함유량은 노볼락 수지 100 질량부에 대해 5~50 질량부인 것이 바람직하고, 10~40 질량부인 것이 보다 바람직하다. 상기의 범위로 함으로써, 감광성 수지 조성물의 감도가 양호해지고, 현상시의 막 감도 억제된다.Moreover, it is preferable that the photosensitive resin composition which concerns on this invention contains the said phenolic compound as a sensitizer. It is preferable that it is 5-50 mass parts with respect to 100 mass parts of novolak resin, and, as for content of a phenol compound, it is more preferable that it is 10-40 mass parts. By setting it as said range, the sensitivity of the photosensitive resin composition will become favorable and the film | membrane sensitivity at the time of image development will be suppressed.

또, 본 발명에 관한 감광성 수지 조성물은 필요에 따라 계면 활성제, 자외선 흡수제를 함유하고 있어도 된다. 계면 활성제로는 불소계 계면 활성제 등을 들 수 있다. 자외선 흡수제로는 2,2',4,4'-테트라히드록시벤조페논, 4-디메틸아미노-2',4'-디히드록시벤조페논, 5-아미노-3-메틸-1-페닐-4-(4-히드록시페닐아조)피라졸, 4-디메틸아미노-4'-히드록시아조벤젠, 4-디에틸아미노아조벤젠, 4-디에틸아미노-4'-에톡시아조벤젠, 쿠르크민 등을 들 수 있다.Moreover, the photosensitive resin composition which concerns on this invention may contain surfactant and a ultraviolet absorber as needed. Examples of the surfactant include fluorine-based surfactants. Ultraviolet absorbers include 2,2 ', 4,4'-tetrahydroxybenzophenone, 4-dimethylamino-2', 4'-dihydroxybenzophenone, 5-amino-3-methyl-1-phenyl-4 -(4-hydroxyphenylazo) pyrazole, 4-dimethylamino-4'-hydroxyazobenzene, 4-diethylaminoazobenzene, 4-diethylamino-4'-ethoxyazobenzene, curkmin, etc. are mentioned. Can be.

또한, 필요에 따라 부가적 수지, 가소제, 안정화제, 접착조제, 콘트라스트 향상제 등의 관용의 첨가제를 함유하고 있어도 된다.Moreover, you may contain common additives, such as an additional resin, a plasticizer, a stabilizer, an adhesion | attachment adjuvant, a contrast improver, as needed.

본 발명에 관한 감광성 수지 조성물은 도포성을 개선하거나 점도를 조정하거나 하기 위해서, 적당한 유기 용제에 용해시킨 용액으로서 사용하는 것이 바람직하다.In order to improve applicability | paintability and adjust a viscosity, it is preferable to use the photosensitive resin composition concerning this invention as a solution which melt | dissolved in the suitable organic solvent.

유기 용제로는 아세톤, 메틸에틸케톤, 시클로헥산온, 메틸이소아밀케톤, 2-헵탄온 등의 케톤류;에틸렌글리콜, 프로필렌글리콜, 디에틸렌글리콜, 에틸렌글리콜 모노아세테이트, 프로필렌글리콜 모노아세테이트, 디에틸렌글리콜 모노아세테이트, 혹은 이들 모노메틸에테르, 모노에틸에테르, 모노프로필에테르, 모노부틸에테르, 또는 모노페닐에테르 등의 다가 알코올류 및 그 유도체;디옥산 등의 환식 에테르류;젖산 에틸, 아세트산 메틸, 아세트산 에틸, 아세트산 부틸, 피루브산 메틸, 피루브산 에틸, 메톡시 프로피온산 에틸 등의 에스테르류; 등을 들 수 있다. 이들 유기 용제는 단독으로 이용해도 되고, 2종 이상을 혼합해 이용해도 된다.As the organic solvent, ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone and 2-heptanone; ethylene glycol, propylene glycol, diethylene glycol, ethylene glycol monoacetate, propylene glycol monoacetate, diethylene Polyhydric alcohols and derivatives thereof such as glycol monoacetate or monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether; cyclic ethers such as dioxane; ethyl lactate, methyl acetate, acetic acid Esters such as ethyl, butyl acetate, methyl pyruvate, ethyl pyruvate and ethyl methoxy propionate; These organic solvents may be used independently, or may mix and use 2 or more types.

유기 용제의 함유량은 특별히 한정되지 않고, 기판 등에 도포 가능한 농도로 도포막 두께에 따라 적절히 설정된다. 구체적으로는 감광성 수지 조성물의 고형분 농도가 10~50 질량%가 되는 양이 바람직하고, 20~40 질량%가 되는 양이 보다 바람직하다.Content of the organic solvent is not specifically limited, It is set suitably according to the coating film thickness in the density | concentration which can be apply | coated to a board | substrate. Specifically, the amount of the solid content concentration of the photosensitive resin composition is preferably 10 to 50% by mass, more preferably 20 to 40% by mass.

본 발명에 관한 감광성 수지 조성물은 상기 각 성분을 혼합, 교반함으로써 조제할 수 있다. 필요에 따라 메쉬, 멤브레인 필터 등을 이용해 더 여과해도 된다.The photosensitive resin composition which concerns on this invention can be prepared by mixing and stirring each said component. As needed, you may filter further using a mesh, a membrane filter, etc.

실시예Example

이하, 본 발명의 실시예를 설명하지만, 본 발명의 범위는 이들 실시예로 한정되는 것은 아니다.Hereinafter, although the Example of this invention is described, the scope of the present invention is not limited to these Examples.

<분류 크레졸의 정제><Purification of classification cresol>

[미처리 1, 2][Untreated 1, 2]

미처리 분류 크레졸로서 부매화공 제의 m-p-크레졸(m-크레졸/p-크레졸 = 66/33(몰비);미처리 1) 및 동일 회사 제의 로트가 다른 m-p-크레졸(m-크레졸/p-크레졸 = 66/33(몰비);미처리 2)를 준비했다. 그리고, 가스 크로마토그래피 질량 분석(PerkinElmer 제)을 이용해 피리딘 및 2-메틸 피리딘의 함유량을 측정했다(검출 한계는 <0.1 ppm). 결과를 하기 표 1에 나타낸다.As untreated classification cresol, mp-cresol (m-cresol / p-cresol = 66/33 (molar ratio); non-treated) and mp-cresol (m-cresol / p-cresol) of different lots from the same company = 66/33 (molar ratio); untreated 2) was prepared. And content of pyridine and 2-methyl pyridine was measured using gas chromatography mass spectrometry (made by PerkinElmer) (detection limit <0.1 ppm). The results are shown in Table 1 below.

[비교 정제예 1][Comparative Purification Example 1]

온도계 및 환류관을 구비한 플라스크 중에 미처리 1의 분류 크레졸 1800g을 넣고, 최대 130℃까지 승온시키면서 초류(初流) 180g을 유출시킨 후, 환류비 10~20의 조건으로 본 증분을 채취해 1550g의 정제 크레졸을 얻었다. 그리고, 상기와 동일하게 하여 이 정제 크레졸 중의 피리딘 및 2-메틸 피리딘의 함유량을 측정했다. 결과를 하기 표 1에 나타낸다.Into a flask equipped with a thermometer and a reflux tube, 1800 g of untreated 1 sorted cresol was introduced, and 180 g of supernatant was poured out while raising the temperature to 130 ° C. Then, this increment was collected under the condition of reflux ratio 10 to 20 g and purified of 1550 g. Cresol was obtained. And it carried out similarly to the above, and content of pyridine and 2-methyl pyridine in this refined cresol was measured. The results are shown in Table 1 below.

[정제예 1][Refining Example 1]

미처리 1의 분류 크레졸 700㎏과 아세트산 부틸 700㎏를 혼합하고, 추가로 1 질량% 염산 수용액 1400㎏을 혼합해 60분간 교반하고, 정치 후, 유기상을 분취했다. 이 유기상에 1 질량% 염산 수용액 1400㎏을 혼합해 60분간 교반하고, 정치 후, 유기상을 분취했다. 이 유기상에 순수 1400㎏를 혼합해 30분간 교반하고, 정치 후, 유기상을 분취했다. 순수를 이용한 세정 작업을 합계 3회 반복했다. 그리고, 수분 1 질량%, 아세트산 부틸 3 질량% 이하가 될 때까지 유기상을 농축해 정제 크레졸을 얻었다. 그리고, 상기와 동일하게 하여 이 정제 크레졸 중의 피리딘 및 2-메틸 피리딘의 함유량을 측정했다. 결과를 하기 표 1에 나타낸다.700 kg of the untreated 1 cresol and 700 kg of butyl acetate were mixed, and 1400 kg of 1 mass% hydrochloric acid aqueous solution was further mixed and stirred for 60 minutes, and the organic phase was separated after standing. 1400 kg of 1 mass% hydrochloric acid aqueous solution was mixed with this organic phase, it stirred for 60 minutes, and after standing, the organic phase was fractionated. Pure water 1400 kg was mixed with this organic phase, it stirred for 30 minutes, and after standing, the organic phase was fractionated. The washing operation using pure water was repeated three times in total. And the organic phase was concentrated until it became 1 mass% of water and 3 mass% or less of butyl acetate, and the refined cresol was obtained. And it carried out similarly to the above, and content of pyridine and 2-methyl pyridine in this refined cresol was measured. The results are shown in Table 1 below.

[정제예 2]Tablet Example 2

온도계 및 환류관을 구비한 플라스크 중에 미처리 1의 분류 크레졸 1000g 및 염산(분류 크레졸 중의 피리딘류와 동일 몰)을 넣고, 최대 130℃까지 승온시키면서 초류 50g을 유출시킨 후, 환류비 10~20의 조건으로 본 증분을 채취해 730g의 정제 크레졸을 얻었다. 그리고, 상기와 동일하게 하여 이 정제 크레졸 중의 피리딘 및 2-메틸 피리딘의 함유량을 측정했다. 결과를 하기 표 1에 나타낸다.In a flask equipped with a thermometer and a reflux tube, 1000 g of fractionated cresol and hydrochloric acid (the same moles as pyridine in the fractionated cresol) were placed in a flask equipped with a thermometer and a reflux tube. This increment was taken to give 730 g of purified cresol. And it carried out similarly to the above, and content of pyridine and 2-methyl pyridine in this refined cresol was measured. The results are shown in Table 1 below.

Figure 112019069730155-pat00003
Figure 112019069730155-pat00003

표 1로부터 알 수 있는 바와 같이, 미처리 분류 크레졸 중에는 피리딘 및 2-메틸 피리딘이 각각 200ppm 전후 포함되어 있다. 비교 정제예 1과 같이 재증류함으로써 2-메틸 피리딘의 함유량을 현저하게 저감시킬 수 있었지만, 피리딘의 함유량은 그만큼 저감시킬 수 없었다. 이와는 대조적으로, 정제예 1, 2와 같이 미처리 분류 크레졸을 염산 수용액으로 세정하거나, 또는 분류 크레졸에 염산을 첨가한 후, 재증류함으로써, 분류 크레졸 중의 피리딘 및 2-메틸 피리딘을 거의 완전히 제거할 수 있었다.As can be seen from Table 1, the untreated fractionated cresol contained about 200 ppm of pyridine and 2-methyl pyridine, respectively. The content of 2-methyl pyridine was remarkably reduced by re-distillation as in Comparative Purification Example 1, but the content of pyridine could not be reduced by that much. In contrast, the pyridine and 2-methyl pyridine in the fractionated cresol can be almost completely removed by washing the crude fractionated cresol with an aqueous hydrochloric acid solution, or by re-distilling the hydrochloric acid in the fractionated cresol as in Purification Examples 1 and 2. there was.

<노볼락 수지의 제조, 감광성 수지 조성물의 조제><Production of novolak resin, preparation of photosensitive resin composition>

[실시예 1]Example 1

m-크레졸/p-크레졸/3,5-크실레놀 = 50/30/20(몰비)이 되도록 정제예 1에서 정제한 분류 크레졸에 대해서, 화학 합성품의 p-크레졸 및 3,5-크실레놀을 첨가했다. 그리고, 산 촉매로서 옥살산을 이용하고, 축합제로서 포르말린을 이용해 통상의 방법에 의해 축합 반응을 실시함으로써 노볼락 수지를 얻었다. 또한, 축합 반응 조건은 분류 크레졸 대신에 화학 합성품의 크레졸을 이용했을 경우에 질량 평균 분자량(Mw) 8000의 노볼락 수지를 얻어지는 조건으로 했다.p-cresol and 3,5-xylene of the chemical synthesis product for the classified cresol purified in Purification Example 1 such that m-cresol / p-cresol / 3,5-xylenol = 50/30/20 (molar ratio). Gnoll was added. And novolak resin was obtained by carrying out condensation reaction by a conventional method using oxalic acid as an acid catalyst, and formalin as a condensing agent. In addition, condensation reaction conditions were made into the conditions which obtain the novolak resin of the mass mean molecular weight (Mw) 8000 when the cresol of a chemical synthetic product is used instead of the classification cresol.

이 노볼락 수지 100 질량부에 대해, 이하의 감광제, 증감제 및 계면 활성제를 첨가하고, 고형분 농도가 35 질량%가 되도록 2-헵탄온을 가해 혼합함으로써 감광성 수지 조성물을 조제했다.The photosensitive resin composition was prepared by adding the following photosensitizer, the sensitizer, and surfactant with respect to 100 mass parts of this novolak resins, and adding and mixing 2-heptanone so that solid content concentration may be 35 mass%.

·감광제Photosensitizer

4,4'-[(2-히드록시페닐)메틸렌]비스(2,3,6-트리메틸페놀)-나프토퀴논-1,2-디아지드-5-설폰산(모노~트리)에스테르···21 질량부 4,4 '-[(2-hydroxyphenyl) methylene] bis (2,3,6-trimethylphenol) -naphthoquinone-1,2-diazide-5-sulfonic acid (mono-tri) ester ... 21 parts by mass

5,5'-디시클로헥실-4,4',3",4"-테트라히드록시-2,2'-디메틸트리페닐메탄-나프토퀴논-1,2-디아지드-5-설폰산(모노~테트라)에스테르···4.3 질량부5,5'-Dicyclohexyl-4,4 ', 3 ", 4" -tetrahydroxy-2,2'-dimethyltriphenylmethane-naphthoquinone-1,2-diazide-5-sulfonic acid ( Mono-tetra) ester ... 4.3 parts by mass

·증감제Sensitizer

4,4'-[1-[4-[2-[4-히드록시페닐]-2-프로필]페닐]에틸리덴]비스페놀···35 질량부4,4 '-[1- [4- [2- [4-hydroxyphenyl] -2-propyl] phenyl] ethylidene] bisphenol..35 parts by mass

·계면 활성제·Surfactants

퍼플루오로알킬기 함유 올리고머···8 질량부8 parts by mass of perfluoroalkyl group-containing oligomer

[실시예 2]Example 2

m-크레졸/p-크레졸/3,5-크실레놀 = 50/30/20(몰비)이 되도록 정제예 1에서 정제한 분류 크레졸에 대해서, 화학 합성품의 p-크레졸 및 3,5-크실레놀을 첨가했다. 그리고, 산 촉매로서 옥살산을 이용하고, 축합제로서 포르말린을 이용해 통상의 방법에 의해 축합 반응을 실시함으로써 노볼락 수지를 얻었다. 또한, 축합 반응 조건은 분류 크레졸 대신에 화학 합성품의 크레졸을 이용했을 경우에 질량 평균 분자량 4500의 노볼락 수지를 얻어지는 조건으로 했다.p-cresol and 3,5-xylene of the chemical synthesis product for the classified cresol purified in Purification Example 1 such that m-cresol / p-cresol / 3,5-xylenol = 50/30/20 (molar ratio). Gnoll was added. And novolak resin was obtained by carrying out condensation reaction by a conventional method using oxalic acid as an acid catalyst, and formalin as a condensing agent. In addition, condensation reaction conditions were made into the conditions which obtain the novolak resin of the mass mean molecular weight 4500 when the cresol of a chemical synthetic product is used instead of the classification cresol.

이 노볼락 수지 100 질량부에 대해, 이하의 감광제, 증감제 및 계면 활성제를 첨가하고, 고형분 농도가 32 질량%가 되도록 2-헵탄온을 가해 혼합함으로써, 감광성 수지 조성물을 조제했다.The photosensitive resin composition was prepared by adding the following photosensitizers, sensitizers, and surfactant with respect to 100 mass parts of this novolak resin, and adding and mixing 2-heptanone so that solid content concentration might be 32 mass%.

·감광제Photosensitizer

4,4'-[(2-히드록시페닐)메틸렌]비스(2,3,6-트리메틸페놀)-나프토퀴논-1,2-디아지드-5-설폰산(모노~트리)에스테르···21 질량부 4,4 '-[(2-hydroxyphenyl) methylene] bis (2,3,6-trimethylphenol) -naphthoquinone-1,2-diazide-5-sulfonic acid (mono-tri) ester ... 21 parts by mass

5,5'-디시클로헥실-4,4',3",4"-테트라히드록시-2,2'-디메틸트리페닐메탄-나프토퀴논-1,2-디아지드 5-설폰산(모노~테트라) 에스테르···4.3 질량부5,5'-Dicyclohexyl-4,4 ', 3 ", 4" -tetrahydroxy-2,2'-dimethyltriphenylmethane-naphthoquinone-1,2-diazide 5-sulfonic acid (mono ... tetra) ester ... 4.3 parts by mass

·증감제Sensitizer

4,4'-[1-[4-[2-[4-히드록시페닐]-2-프로필]페닐]에틸리덴]비스페놀···35 질량부4,4 '-[1- [4- [2- [4-hydroxyphenyl] -2-propyl] phenyl] ethylidene] bisphenol..35 parts by mass

·계면 활성제·Surfactants

퍼플루오로알킬기 함유 올리고머···8 질량부8 parts by mass of perfluoroalkyl group-containing oligomer

[비교예 1, 2][Comparative Examples 1 and 2]

정제예 1에서 정제한 분류 크레졸 대신에 미처리 1의 분류 크레졸을 이용하는 것 이외에는 실시예 1, 2와 동일하게 하여 노볼락 수지를 제조함과 함께 감광성 수지 조성물을 조제했다. 또한, 타겟이 되는 노볼락 수지의 질량 평균 분자량은 비교예 1이 8000이고, 비교예 2가 4500이다.A photosensitive resin composition was prepared in the same manner as in Examples 1 and 2, except that the classification cresol of Untreated 1 was used instead of the classification cresol purified in Purification Example 1. In addition, the comparative example 1 is 8000, and the comparative example 2 is 4500 for the mass mean molecular weight of the novolak resin used as a target.

[비교예 3, 4][Comparative Examples 3 and 4]

노볼락 수지를 제조할 때의 산 촉매의 양을 3배로 증량한 것 이외에는 비교예 1, 2와 동일하게 하여 노볼락 수지를 제조함과 함께 감광성 수지 조성물을 조제했다. 또한, 타겟이 되는 노볼락 수지의 질량 평균 분자량은 비교예 3이 8000이고, 비교예 4가 4500이다.A photosensitive resin composition was prepared while producing a novolak resin in the same manner as in Comparative Examples 1 and 2, except that the amount of the acid catalyst when the novolak resin was increased by three times. In addition, the comparative example 3 is 8000, and the comparative example 4 is 4500 for the mass mean molecular weight of the novolak resin used as a target.

[비교예 5][Comparative Example 5]

정제예 1에서 정제한 분류 크레졸 대신에 미처리 2의 분류 크레졸을 이용하는 것 이외에는 실시예 1과 동일하게 하여 노볼락 수지를 제조했다. 또한, 타겟이 되는 노볼락 수지의 질량 평균 분자량은 8000이다.A novolak resin was produced in the same manner as in Example 1 except that the fractionated cresol of untreated 2 was used instead of the fractionated cresol purified in Purification Example 1. In addition, the mass average molecular weight of the novolak resin used as a target is 8000.

[실시예 3]Example 3

m-크레졸/p-크레졸 = 60/40(몰비)이 되도록 정제예 2에서 정제한 분류 크레졸에 대해서, 화학 합성품의 p-크레졸을 첨가했다. 그리고, 산 촉매로서 옥살산을 이용하고, 축합제로서 포르말린을 이용해 통상의 방법에 의해 축합 반응을 실시함으로써 노볼락 수지를 얻었다. 또한, 축합 반응 조건은 분류 크레졸 대신에 화학 합성품의 크레졸을 이용했을 경우에 질량 평균 분자량(Mw) 16300의 노볼락 수지를 얻어지는 조건으로 했다.To the fractionation cresol purified in Purification Example 2 so that m-cresol / p-cresol = 60/40 (molar ratio), p-cresol of the chemical synthetic product was added. And novolak resin was obtained by carrying out condensation reaction by a conventional method using oxalic acid as an acid catalyst, and formalin as a condensing agent. In addition, condensation reaction conditions were made into the conditions which obtain the novolak resin of the mass mean molecular weight (Mw) 16300, when cresol of a chemical synthetic product is used instead of classification cresol.

이 노볼락 수지 100 질량부에 대해, 이하의 감광제, 첨가제 및 계면 활성제를 첨가하고, 고형분 농도가 20 질량%가 되도록 젖산 에틸/아세트산 부틸=90/10(질량비)의 혼합 용제를 가해 혼합함으로써 감광성 수지 조성물을 조제했다.To 100 mass parts of this novolak resin, the following photosensitizer, an additive, and surfactant are added, and the photosensitive property is added by adding and mixing the mixed solvent of ethyl lactate / butyl acetate = 90/10 (mass ratio) so that solid content concentration may be 20 mass%. The resin composition was prepared.

·감광제Photosensitizer

2,3,4-트리히드록시벤조페논의 6-디아조-5,6-디히드로-5-옥소-1-나프탈렌 설폰산 에스테르···27 질량부6-diazo-5,6-dihydro-5-oxo-1-naphthalene sulfonic acid ester of 2,3,4-trihydroxybenzophenone ... 27 parts by mass

·첨가제·additive

2,3,4-트리히드록시벤조페논···12.7 질량부2,3,4-trihydroxybenzophenone ... 12.7 parts by mass

·계면 활성제·Surfactants

퍼플루오로알킬기 함유 올리고머···5.1 질량부Perfluoroalkyl group containing oligomer ... 5.1 mass parts

[비교예 6]Comparative Example 6

정제예 2에서 정제한 분류 크레졸 대신에 미처리 1의 분류 크레졸을 이용하는 것 이외에는 실시예 3과 동일하게 하여 노볼락 수지를 제조했다. 또한, 타겟이 되는 노볼락 수지의 질량 평균 분자량은 16300이다.A novolak resin was produced in the same manner as in Example 3 except that the fractionation cresol of untreated 1 was used instead of the fractionation cresol purified in Purification Example 2. In addition, the mass average molecular weight of the novolak resin used as a target is 16300.

[비교예 7]Comparative Example 7

정제예 2에서 정제한 분류 크레졸 대신에 비교 정제예 1에서 정제한 분류 크레졸을 이용하는 것 이외에는 실시예 3과 동일하게 하여 노볼락 수지를 제조했다. 또한, 타겟이 되는 노볼락 수지의 질량 평균 분자량은 16300이다.A novolak resin was produced in the same manner as in Example 3 except that the fractionation cresol purified in Comparative Purification Example 1 was used instead of the fractionation cresol purified in Purification Example 2. In addition, the mass average molecular weight of the novolak resin used as a target is 16300.

<노볼락 수지 및 감광성 수지 조성물의 평가><Evaluation of novolak resin and photosensitive resin composition>

[노볼락 수지의 질량 평균 분자량(Mw)의 평가][Evaluation of mass average molecular weight (Mw) of novolac resin]

실시예 1~3, 비교예 1~7에서 얻어진 노볼락 수지의 질량 평균 분자량을 측정했다. 각각의 타겟이 되는 질량 평균 분자량에 대한 비율(%)을 하기 표 2에 나타낸다.The mass average molecular weight of the novolak resin obtained in Examples 1-3 and Comparative Examples 1-7 was measured. The ratio (%) with respect to the mass average molecular weight used as each target is shown in Table 2 below.

[노볼락 수지의 알칼리 용해 속도(ADR)의 평가][Evaluation of Alkali Dissolution Rate (ADR) of Novolak Resin]

실시예 1~3, 비교예 1~7에서 얻어진 노볼락 수지를 각각 프로필렌글리콜 모노메틸에테르 아세테이트에 용해시켜 25 질량%의 수지 용액을 조제했다. 이 수지 용액을 실리콘 웨이퍼 상에 도포하고 110℃에서 90초간 건조시킴으로써 막 두께 1㎛의 수지막을 형성했다. 그 후, 수지막을 2.38 질량% 테트라메틸암모늄 수용액에 일정 시간 침지해 수지막의 막 두께 변화량을 구했다.The novolak resins obtained in Examples 1-3 and Comparative Examples 1-7 were dissolved in propylene glycol monomethyl ether acetate, respectively, and the 25 mass% resin solution was prepared. This resin solution was applied onto a silicon wafer and dried at 110 ° C. for 90 seconds to form a resin film having a film thickness of 1 μm. Then, the resin film was immersed in 2.38 mass% tetramethylammonium aqueous solution for a fixed time, and the film thickness change amount of the resin film was calculated | required.

또, 분류 크레졸 대신에 화학 합성품의 크레졸을 이용한 것 이외에는 실시예 1~3과 동일하게 하여 질량 평균 분자량 4500, 8000, 16300의 노볼락 수지를 각각 제조하고, 마찬가지로 수지막의 막 두께 변화량을 구해 실시예 1~3, 비교예 1~7의 각 분자량에 대해서의 표준값으로 했다.In addition, novolak resins having a mass average molecular weight of 4500, 8000, and 16300 were produced in the same manner as in Examples 1 to 3, except that cresols of chemical synthetic products were used instead of the classification cresols. It was set as the standard value about each molecular weight of 1-3 and Comparative Examples 1-7.

실시예 1~3, 비교예 1~7의 막 두께 변화량의 표준값에 대한 비율(%)을 하기 표 2에 나타낸다.The ratio (%) with respect to the standard value of the film thickness change amount of Examples 1-3 and Comparative Examples 1-7 is shown in Table 2 below.

[감광성 수지 조성물의 감도 평가][Evaluation of Sensitivity of Photosensitive Resin Composition]

실시예 1, 2, 비교예 1~4에서 조제한 감광성 수지 조성물을 스피너를 이용해 실리콘 웨이퍼 상에 도포하고, 핫 플레이트 상에서 90℃에서 90초간 건조시킴으로써 막 두께 1.05㎛의 수지막을 얻었다. 다음에, 축소 투영 노광 장치 NSR-2005i10D(니콘사 제)를 이용하여 라인 앤드 스페이스가 1:1인 0.5㎛ 패턴 대응의 마스크(레티클)를 통하여 0.1초부터 0.01초 간격으로 수지막을 노광한 후, 110℃, 90초간의 PEB(노광 후 가열) 처리를 실시했다. 그 후, 2.38 질량% 테트라메틸암모늄 수용액을 이용하여 23℃에서 60초간 노광 후의 수지막을 현상하고 30초간 수세하여 건조시킴으로써 라인 앤드 스페이스 패턴을 형성했다. 그리고, 마스크대로의 라인 앤드 스페이스 패턴이 형성되는 최적 노광 시간(Eop)을 밀리세컨드(ms) 단위로 구해 감도의 지표로 했다.The photosensitive resin composition prepared in Examples 1 and 2 and Comparative Examples 1-4 was apply | coated on a silicon wafer using a spinner, and it dried for 90 second at 90 degreeC on the hotplate, and obtained the resin film of 1.05 micrometers in thickness. Next, after exposing the resin film at intervals of 0.1 second to 0.01 second through a 0.5 µm pattern-adaptive mask (reticle) having a line and space of 1: 1 using a reduced projection exposure apparatus NSR-2005i10D (manufactured by Nikon Corporation), PEB (post-exposure heating) process was performed for 110 degreeC and 90 second. Then, the line and space pattern was formed by developing the resin film after exposure for 60 second at 23 degreeC using the 2.38 mass% tetramethylammonium aqueous solution, and washing with water for 30 seconds and drying. The optimum exposure time (Eop) in which the line-and-space pattern along the mask is formed was determined in milliseconds (ms) to set an index of sensitivity.

또, 실시예 3에서 조제한 감광성 수지 조성물을 스피너를 이용해 실리콘 웨이퍼 상에 도포하고, 핫 플레이트 상에서 90℃에서 90초간 건조시킴으로써 막 두께 1.26㎛의 수지막을 얻었다. 다음에, ghi 혼합 광원(단, h선(405㎚) 이하의 파장의 빛은 필터로 차단)을 이용하여 라인 앤드 스페이스가 1:1인 1.0㎛ 패턴 대응의 마스크(레티클)를 통하여 0.1초부터 0.01초 간격으로 수지막을 노광한 후, 110℃, 90초간의 PEB(노광 후 가열) 처리를 실시했다. 그 후, 2.38 질량% 테트라메틸암모늄 수용액을 이용하여 23℃에서 60초간 노광 후의 수지막을 현상하고, 30초간 수세해 건조시킴으로써 라인 앤드 스페이스 패턴을 형성했다. 그리고, 마스크대로의 라인 앤드 스페이스 패턴이 형성되는 최적 노광 시간(Eop)을 밀리세컨드(ms) 단위로 구해 감도의 지표로 했다.Moreover, the photosensitive resin composition prepared in Example 3 was apply | coated on the silicon wafer using a spinner, and it dried for 90 second at 90 degreeC on the hotplate, and obtained the resin film with a film thickness of 1.26 micrometers. Next, using a ghi mixed light source (wherein light having a wavelength less than or equal to h line (405 nm) is blocked by a filter) from 0.1 second through a mask (reticle) having a 1.0 μm pattern with a line and space of 1: 1. After exposing the resin film at 0.01 second intervals, PEB (post-exposure heating) treatment was performed at 110 ° C for 90 seconds. Then, the resin film after exposure for 60 second was developed at 23 degreeC using the 2.38 mass% tetramethylammonium aqueous solution, and the line and space pattern was formed by washing with water and drying for 30 second. The optimum exposure time (Eop) in which the line-and-space pattern along the mask is formed was determined in milliseconds (ms) to set an index of sensitivity.

또, 분류 크레졸 대신에 화학 합성품의 크레졸을 이용한 것 이외에는 실시예 1~3과 동일하게 하여 질량 평균 분자량 4500, 8000, 16300의 노볼락 수지를 각각 제조하고, 이 노볼락 수지를 이용하여 실시예 1~3, 비교예 1~4와 동일하게 하여 감광성 수지 조성물을 조제했다. 그리고, 상기와 동일하게 최적 노광 시간(Eop)을 구해 실시예 1~3, 비교예 1~4의 표준값으로 했다.A novolak resin having a mass average molecular weight of 4500, 8000, and 16300 was produced in the same manner as in Examples 1 to 3, except that cresols of chemical synthetic products were used instead of the classification cresols, and Example 1 was used using this novolak resin. It carried out similarly to -3 and Comparative Examples 1-4, and prepared the photosensitive resin composition. And optimum exposure time (Eop) was calculated | required similarly to the above, and it was set as the standard value of Examples 1-3 and Comparative Examples 1-4.

실시예 1~3, 비교예 1~4의 최적 노광 시간(Eop)의 표준값에 대한 비율(%)을 하기 표 2에 나타낸다.The ratio (%) with respect to the standard value of the optimal exposure time (Eop) of Examples 1-3 and Comparative Examples 1-4 is shown in Table 2 below.

또한, 비교예 5에 대해서는 노볼락 수지의 특성이 비교예 1과 마찬가지로 뒤떨어지는 것을 확인할 수 있었기 때문에, 감광성 수지 조성물의 평가는 실시하지 않는 것으로 했다. 또, 비교예 6, 7에 대해서는 노볼락 수지의 특성 결과로부터 감도 특성의 열화는 분명하고, 내열성 및 해상성 평가에서 다른 예와 같이 감도를 조정할 수 없기 때문에, 감광성 수지 조성물의 평가는 실시하지 않는 것으로 했다.In addition, about the comparative example 5, since it was confirmed that the characteristic of novolak resin is inferior like the comparative example 1, it was decided not to evaluate the photosensitive resin composition. Moreover, about Comparative Examples 6 and 7, deterioration of a sensitivity characteristic is obvious from the characteristic result of novolak resin, and since sensitivity cannot be adjusted like other examples in heat resistance and resolution evaluation, evaluation of the photosensitive resin composition is not performed. I did it.

[감광성 수지 조성물의 내열성 평가][Evaluation of Heat Resistance of Photosensitive Resin Composition]

감도를 동일한 정도로 조정하기 위해, 실시예 1의 감광성 수지 조성물과 실시예 2의 감광성 수지 조성물을 35:65의 질량비로 혼합했다. 마찬가지로 비교예 1의 감광성 수지 조성물과 비교예 2의 감광성 수지 조성물을 84:16의 질량비로 혼합함과 함께, 비교예 3의 감광성 수지 조성물과 비교예 4의 감광성 수지 조성물을 12:88의 질량비로 혼합했다.In order to adjust the sensitivity to the same degree, the photosensitive resin composition of Example 1 and the photosensitive resin composition of Example 2 were mixed by the mass ratio of 35:65. Similarly, while mixing the photosensitive resin composition of the comparative example 1 and the photosensitive resin composition of the comparative example 2 in the mass ratio of 84:16, the photosensitive resin composition of the comparative example 3 and the photosensitive resin composition of the comparative example 4 in the mass ratio of 12:88 Mixed.

또한, 실시예 3의 감광성 수지 조성물은 혼합 조정하지 않고 그대로 사용했다.In addition, the photosensitive resin composition of Example 3 was used as it is without mixing adjustment.

다음에, 얻어진 감광성 수지 조성물(실시예 3을 제외함)을 스피너를 이용해 실리콘 웨이퍼 상에 도포하고, 핫 플레이트 상에서 90℃에서 90초간 건조시킴으로써 막 두께 1.05㎛의 수지막을 얻었다. 다음에, 축소 투영 노광 장치 NSR-2005i10D(니콘사 제)를 이용해 수지막을 노광한 후, 110℃, 90초간의 PEB(노광 후 가열) 처리를 실시했다. 다음에, 2.38 질량% 테트라메틸암모늄 수용액을 이용하여 23℃에서 60초간 노광 후의 수지막을 현상하고, 30초간 수세해 건조시킴으로써 300㎛의 라인 패턴을 형성했다. 그 후, 실리콘 웨이퍼를 130℃에서 5분간 가열한 후, 라인 패턴의 단면을 관찰했다. 그리고, 300㎛ 라인 패턴의 모퉁이가 남아 있는 것을 ○, 열 플로우에 의해 300㎛ 라인 패턴의 모퉁이가 둥글려져 있는 것을 ×로서 내열성을 평가했다. 결과를 하기 표 2에 나타낸다.Next, the obtained photosensitive resin composition (except Example 3) was apply | coated on a silicon wafer using a spinner, and it dried for 90 second at 90 degreeC on the hotplate, and obtained the resin film with a film thickness of 1.05 micrometers. Next, after exposing the resin film using the reduced-projection exposure apparatus NSR-2005i10D (made by Nikon Corporation), PEB (post exposure heating) process was performed for 110 degreeC and 90 second. Next, the resin film after exposure for 60 second was developed at 23 degreeC using the 2.38 mass% tetramethylammonium aqueous solution, and 300-micrometer line pattern was formed by washing with water and drying for 30 second. Then, the silicon wafer was heated at 130 degreeC for 5 minutes, and the cross section of the line pattern was observed. And heat resistance evaluated as (circle) that the corner of a 300 micrometer line pattern remained, and that the corner of a 300 micrometer line pattern was rounded by heat flow. The results are shown in Table 2 below.

또한, 실시예 3의 감광성 수지 조성물에 대해서는 수지막의 막 두께를 1.26㎛로 하고, 노광시에 ghi 혼합 광원(단, h선(405㎚) 이하의 파장의 빛은 필터로 차단)을 이용한 것 이외에는 상기와 동일하게 하여 내열성을 평가했다. 결과를 하기 표 2에 나타낸다.In addition, about the photosensitive resin composition of Example 3, the film thickness of the resin film shall be 1.26 micrometers, except having used the ghi mixed light source (except the light of wavelength below h line (405 nm) with a filter) at the time of exposure. Heat resistance was evaluated similarly to the above. The results are shown in Table 2 below.

[감광성 수지 조성물의 해상성 평가][Resolution Evaluation of Photosensitive Resin Composition]

감도를 동일한 정도로 조정하기 위해, 실시예 1의 감광성 수지 조성물과 실시예 2의 감광성 수지 조성물을 35:65의 질량비로 혼합했다. 마찬가지로 비교예 1의 감광성 수지 조성물과 비교예 2의 감광성 수지 조성물을 84:16의 질량비로 혼합함과 함께, 비교예 3의 감광성 수지 조성물과 비교예 4의 감광성 수지 조성물을 12:88의 질량비로 혼합했다. In order to adjust the sensitivity to the same degree, the photosensitive resin composition of Example 1 and the photosensitive resin composition of Example 2 were mixed by the mass ratio of 35:65. Similarly, while mixing the photosensitive resin composition of the comparative example 1 and the photosensitive resin composition of the comparative example 2 in the mass ratio of 84:16, the photosensitive resin composition of the comparative example 3 and the photosensitive resin composition of the comparative example 4 in the mass ratio of 12:88 Mixed.

또한, 실시예 3의 감광성 수지 조성물은 혼합 조정하지 않고 그대로 사용했다.In addition, the photosensitive resin composition of Example 3 was used as it is without mixing adjustment.

다음에, 라인 앤드 스페이스 폭이 0.50㎛, 0.45㎛, 0.40㎛, 0.38㎛, 0.36㎛, 0.35㎛, 또는 0.32㎛의 마스크(레티클)를 이용하는 것 이외에는 상기 감도 평가에 있어서의 패턴 형성 방법과 동일하게 하여 라인 앤드 스페이스 패턴을 형성했다(실시예 3을 제외함). 그리고, 스페이스 부분의 잔사의 유무를 확인함으로써, 해상 가능한 최소의 스페이스 폭을 구했다. 결과를 하기 표 2에 나타낸다.Next, the line and space width was the same as the pattern formation method in the above sensitivity evaluation except that a mask (reticle) having 0.50 µm, 0.45 µm, 0.40 µm, 0.38 µm, 0.36 µm, 0.35 µm, or 0.32 µm was used. To form a line-and-space pattern (except Example 3). Then, by confirming the presence or absence of residues in the space portion, the minimum space width resolvable was obtained. The results are shown in Table 2 below.

또한, 실시예 3의 감광성 수지 조성물에 대해서는 라인 앤드 스페이스 폭이 1.0㎛, 0.8㎛, 0.6㎛, 또는 0.4㎛의 마스크(레티클)를 이용하는 것 이외에는 상기 감도 평가에 있어서의 패턴 형성 방법과 동일하게 하여 라인 앤드 스페이스 패턴을 형성했다. 그리고, 스페이스 부분의 잔사의 유무를 확인함으로써, 해상 가능한 최소의 스페이스 폭을 구했다. 결과를 하기 표 2에 나타낸다.In addition, about the photosensitive resin composition of Example 3, it carried out similarly to the pattern formation method in the said sensitivity evaluation except having used the mask (reticle) whose line and space width is 1.0 micrometer, 0.8 micrometer, 0.6 micrometer, or 0.4 micrometer. A line and space pattern was formed. Then, by confirming the presence or absence of residues in the space portion, the minimum space width resolvable was obtained. The results are shown in Table 2 below.

Figure 112019069730155-pat00004
Figure 112019069730155-pat00004

표 2로부터 알 수 있는 바와 같이, 염기성 물질을 거의 완전히 제거한 분류 크레졸을 이용해 노볼락 수지를 제조한 실시예 1~3에서는 질량 평균 분자량, 알칼리 용해 속도가 거의 표준값대로 되어 있었다. 또, 감광성 수지 조성물의 감도도 거의 표준값대로 되어 있으며, 내열성, 해상성도 양호했다. 또한, 실시예 3의 해상성의 결과에 대해서는 분류 크레졸 대신에 화학 합성품의 크레졸을 이용했을 경우와 동등하여 양호한 결과라고 할 수 있다.As can be seen from Table 2, in Examples 1 to 3 in which novolak resins were produced using fractionated cresols in which basic substances were almost completely removed, the mass average molecular weight and the alkali dissolution rate were almost as standard values. Moreover, the sensitivity of the photosensitive resin composition also became nearly standard value, and heat resistance and resolution were also favorable. In addition, about the result of the resolution of Example 3, it can be said that it is a favorable result similarly to the case where the cresol of a chemical synthetic product is used instead of the classification cresol.

이것과는 대조적으로, 미처리 1의 분류 크레졸을 이용해 노볼락 수지를 제조한 비교예 1, 2에서는 질량 평균 분자량, 알칼리 용해 속도가 표준값으로부터 크게 벗어나 있었다. 또, 감광성 수지 조성물의 감도도 표준값으로부터 크게 벗어나고, 내열성, 해상성도 실시예 1, 2보다 뒤떨어져 있었다.In contrast, in Comparative Examples 1 and 2 in which novolak resins were prepared using the untreated 1 fractionation cresol, the mass average molecular weight and the alkali dissolution rate were greatly deviated from the standard values. Moreover, the sensitivity of the photosensitive resin composition also deviated significantly from the standard value, and heat resistance and resolution were inferior to Examples 1 and 2.

또, 비교예 1, 2보다도 산 촉매의 양을 3배로 증량해 노볼락 수지를 제조한 비교예 3, 4에서는 질량 평균 분자량, 알칼리 용해 속도는 거의 표준값대로 되었지만, 감광성 수지 조성물의 감도가 표준값으로부터 크게 벗어나고, 내열성, 해상성도 실시예 1, 2보다 뒤떨어져 있었다.In addition, in Comparative Examples 3 and 4 in which the amount of the acid catalyst was increased three times as compared to Comparative Examples 1 and 2 to produce a novolak resin, the mass average molecular weight and the alkali dissolution rate were almost as standard values, but the sensitivity of the photosensitive resin composition was lower than the standard value. It greatly deviated, and heat resistance and resolution were inferior to Examples 1 and 2.

또, 미처리 2의 분류 크레졸을 이용해 노볼락 수지를 제조한 비교예 5, 미처리 1의 분류 크레졸을 이용해 비교예 1, 2와는 상이한 노볼락 수지를 제조한 비교예 6, 재증류한 분류 크레졸을 이용해 노볼락 수지를 제조한 비교예 7에서도 질량 평균 분자량, 알칼리 용해 속도가 표준값으로부터 크게 벗어나 있었다.In addition, Comparative Example 5 in which a novolak resin was prepared using a fractionated cresol of untreated 2, and Comparative Example 6 in which a novolak resin was produced different from Comparative Examples 1 and 2 using a fractionated cresol of untreated 1 were used. In Comparative Example 7 in which a novolak resin was produced, the mass average molecular weight and the alkali dissolution rate were largely deviated from the standard value.

Claims (5)

감광성 수지 조성물용 노볼락 수지의 제조에 이용되는 크레졸류의 정제 방법으로서,
타르 증류에 의해 얻어진 분류 크레졸 중의 염기성 물질을 제거하는 제거 공정을 포함하고,
이 제거 공정에서는 상기 분류 크레졸을 염산의 수용액으로 세정하거나, 또는 상기 분류 크레졸에 염산을 첨가한 후, 재증류하며,
상기 분류 크레졸 중에 존재하는 피리딘 및 2-메틸 피리딘의 함유량이 각각 2 ppm 미만이 되도록 제거하는 것을 특징으로 하는 정제 방법.
As a purification method of cresols used for manufacture of the novolak resin for photosensitive resin compositions,
A removal step of removing basic substances in the fractionated cresol obtained by tar distillation,
In this removal step, the fractionated cresol is washed with an aqueous solution of hydrochloric acid, or hydrochloric acid is added to the fractionated cresol, and then distilled again.
Purifying method characterized in that the content of pyridine and 2-methyl pyridine present in the fractionated cresol is removed to be less than 2 ppm each.
감광성 수지 조성물용 노볼락 수지의 제조 방법으로서,
촉매의 존재 하, 크레졸류와 알데히드류 및/또는 케톤류를 반응시키는 반응 공정을 포함하고,
상기 크레졸류가 청구항 1에 기재된 정제 방법에 의해 정제된 정제 크레졸을 함유하는 것을 특징으로 하는 제조 방법.
As a manufacturing method of the novolak resin for the photosensitive resin composition,
A reaction step of reacting cresols with aldehydes and / or ketones in the presence of a catalyst,
Said cresol contains the refined cresol refine | purified by the purification method of Claim 1, The manufacturing method characterized by the above-mentioned.
청구항 2에 있어서,
상기 반응 공정에서는 상기 크레졸류 및 이 크레졸류 이외의 페놀류와 상기 알데히드류 및/또는 상기 케톤류를 반응시키는 제조 방법.
The method according to claim 2,
In the said reaction process, the manufacturing method which makes the said cresol, phenols other than this cresol, and the said aldehyde and / or the said ketone react.
삭제delete 삭제delete
KR1020190082094A 2012-07-20 2019-07-08 Method of purifying cresols, method of producing novolak resin for photosensitive resin composition and photosensitive resin composition KR102066814B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-161475 2012-07-20
JP2012161475A JP6178052B2 (en) 2012-07-20 2012-07-20 Method for purifying cresol, method for producing novolak resin for photosensitive resin composition, and photosensitive resin composition

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020130084184A Division KR20140011957A (en) 2012-07-20 2013-07-17 Method of purifying cresols, method of producing novolak resin for photosensitive resin composition and photosensitive resin composition

Publications (2)

Publication Number Publication Date
KR20190086638A KR20190086638A (en) 2019-07-23
KR102066814B1 true KR102066814B1 (en) 2020-01-15

Family

ID=50043302

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020130084184A KR20140011957A (en) 2012-07-20 2013-07-17 Method of purifying cresols, method of producing novolak resin for photosensitive resin composition and photosensitive resin composition
KR1020190082094A KR102066814B1 (en) 2012-07-20 2019-07-08 Method of purifying cresols, method of producing novolak resin for photosensitive resin composition and photosensitive resin composition

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020130084184A KR20140011957A (en) 2012-07-20 2013-07-17 Method of purifying cresols, method of producing novolak resin for photosensitive resin composition and photosensitive resin composition

Country Status (4)

Country Link
JP (1) JP6178052B2 (en)
KR (2) KR20140011957A (en)
CN (2) CN111285754A (en)
TW (1) TWI631101B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102463920B1 (en) * 2016-02-12 2022-11-07 에스케이하이닉스 주식회사 Single poly non-volatile memory cell, memory cell array, and methods of operating the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000198827A (en) 1998-12-28 2000-07-18 Kashima Oil Co Ltd Granular modified phenol resin and its production
JP2000319346A (en) * 1999-05-13 2000-11-21 Sumitomo Durez Co Ltd Production of phenolic resin for photoresist
JP2002332322A (en) 1997-02-18 2002-11-22 Kashima Oil Co Ltd Molding material, electrical/electronic part material and semiconductor sealing medium which contain highly reactive modified phenolic resin and epoxy resin

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587196A (en) * 1981-06-22 1986-05-06 Philip A. Hunt Chemical Corporation Positive photoresist with cresol-formaldehyde novolak resin and photosensitive naphthoquinone diazide
US4429170A (en) * 1982-07-14 1984-01-31 Koppers Company, Inc. Process for removing tar bases from Lurgi tar acid stream
US4443636A (en) * 1982-07-14 1984-04-17 Koppers Company, Inc. Refining lurgi tar acids
JPS6155191A (en) * 1984-08-27 1986-03-19 Sumikin Coke Co Ltd Refining of tar acid
JPS6155190A (en) * 1984-08-27 1986-03-19 Sumikin Coke Co Ltd Refining of tar acid
JP2932689B2 (en) * 1990-11-30 1999-08-09 住友化学工業株式会社 Method for removing nitrogen compounds in cresols
JPH0741768A (en) * 1993-07-30 1995-02-10 Kawasaki Steel Corp Purification of tar acid
JPH07188672A (en) * 1993-12-27 1995-07-25 Kawasaki Steel Corp Method for refinement of tar acid
JPH0953080A (en) 1995-08-10 1997-02-25 Nkk Corp Purification of tar acid
JP2002221792A (en) * 2001-01-29 2002-08-09 Sumitomo Bakelite Co Ltd Novolak type phenol resin for photoresist
JP5535869B2 (en) * 2010-10-21 2014-07-02 明和化成株式会社 NOVOLAC TYPE PHENOL RESIN AND PHOTORESIST COMPOSITION CONTAINING THE SAME

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002332322A (en) 1997-02-18 2002-11-22 Kashima Oil Co Ltd Molding material, electrical/electronic part material and semiconductor sealing medium which contain highly reactive modified phenolic resin and epoxy resin
JP2000198827A (en) 1998-12-28 2000-07-18 Kashima Oil Co Ltd Granular modified phenol resin and its production
JP2000319346A (en) * 1999-05-13 2000-11-21 Sumitomo Durez Co Ltd Production of phenolic resin for photoresist

Also Published As

Publication number Publication date
CN111285754A (en) 2020-06-16
TWI631101B (en) 2018-08-01
TW201410643A (en) 2014-03-16
CN103570503A (en) 2014-02-12
KR20190086638A (en) 2019-07-23
KR20140011957A (en) 2014-01-29
JP6178052B2 (en) 2017-08-09
JP2014019678A (en) 2014-02-03

Similar Documents

Publication Publication Date Title
KR20130123360A (en) Positive-type photoresist composition
KR102066814B1 (en) Method of purifying cresols, method of producing novolak resin for photosensitive resin composition and photosensitive resin composition
JP3600713B2 (en) Positive photoresist composition
KR20040002494A (en) Novolak resin solution, positive photoresist composition and preparation method thereof
JP5953811B2 (en) Positive photoresist composition
KR100709520B1 (en) Phenol novolak resin, production process thereof, and positive photoresist composition using the same
JP4429546B2 (en) NOVOLAC RESIN MANUFACTURING METHOD AND POSITIVE PHOTORESIST COMPOSITION USING THE SAME
TWI506060B (en) Novolac type phenolic resin and resin composition for photoresist
KR102012053B1 (en) Photoresist resin composition
JP2005258175A (en) Positive photoresist composition
KR20060043671A (en) Process for preparing phenolic resin for photo-resist and photo-resist composition
JP4219435B2 (en) Method for producing polyphenol diesterified product and positive photosensitive composition
JP2015196707A (en) Novolac type phenol resin and production method of the same, and photoresist composition using the same
US6127087A (en) Positive photoresist compositions and multilayer resist materials using same
JP2005097331A (en) Production method of phenol resin for photoresist, and photoresist composition
KR101102111B1 (en) Process for producing a resin for photo resist, and a composition for photo resist
JP4302278B2 (en) Phenol novolac resin, synthesis method thereof, and positive photoresist composition using the same
JP3600375B2 (en) Positive photoresist composition
JP3774612B2 (en) Phenol novolac resin and positive photoresist composition using the same
JP2005258174A (en) Positive photoresist composition
KR101253351B1 (en) Process for preparing of novolak type phenolic resin, novolak type phenolic resin and phenolic resin composition for photo resist
JP2004239947A (en) Positive photoresist composition
JPH07128849A (en) Positive type resist composition
JP2004168964A (en) Novolac resin, method for producing the same and positive type photoresist composition
JP2005290026A (en) Method for producing photoresist phenol resin and photoresist resin composition

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant