JP2000315644A - Aligner, exposure method, transporting method of substrate and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress a volatile component from a photosensitive material applied to a substrate and to stabilize exposure ability by providing a volatile component reduction processing part reducing the volatile component contained in photosensitive substance. SOLUTION: A vacuum processor V1 is installed outside a projection aligner 1. In the vacuum processor V1, a wafer W to which resist is applied by a coater in a previous process is arranged on the preceding stage side of a part loaded on a wafer carrier 13. The wafer carrier 13 transports the wafer W to which resist is applied into the projection aligner 1. The vacuum processor V1 is formed of a container 15 where the wafer W is stored, a vacuum pump 16 for reducing pressure in the container 15 and a controller controlling the operation of the vacuum pump 16. In the vacuum processor V1, the vacuum pump 16 is operated by the controller in a state where the wafer W to which resist is applied is stored in the container 15 and it is kept in the state where pressure is reduced to prescribed one (state approximated to a vacuum state) lower than atmospheric pressure for prescribed time.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus, an exposure method, a substrate transfer method, and a semiconductor device suitable for use in manufacturing devices such as semiconductor elements and liquid crystal display elements by a lithography process. is there.

[0002]

2. Description of the Related Art In a photolithography process occupying an important position in a manufacturing process of a device such as a semiconductor device or a liquid crystal display device, a circuit pattern of a photomask or a reticle (hereinafter simply referred to as a "reticle") is formed by a projection optical system. There is used a projection exposure apparatus that performs projection exposure and transfer onto a substrate such as a wafer or a glass plate to which a photosensitive agent has been applied via a photomask. In recent years, as the degree of integration of semiconductor integrated circuits has increased, such a projection exposure apparatus has been known in which a substrate is sequentially moved in a step-and-repeat manner while a pattern is sequentially projected and transferred onto a plurality of exposure regions on the substrate. Go,
So-called steppers are the mainstream.

In a projection exposure apparatus such as a stepper, a laser beam is often used as exposure light emitted from a light source. Particularly, in recent years, since the circuit pattern of a semiconductor element has been steadily miniaturized, the exposure wavelength has been shortened in order to cope with this. For example, the wavelength is 193 nm.
ArF excimer laser and the like are being used.

However, in the case of exposure light such as an ArF excimer laser, its emission spectrum line overlaps with the oxygen absorption spectrum region, so that the light utilization efficiency (transmittance) decreases due to the absorption of oxygen and the inconvenience caused by the generation of ozone occurs. Occurs. In particular, ozone is not only harmful, but also adversely affects light use efficiency, and furthermore, causes a chemical reaction with ions and suspended matters in the air to cause cloudiness on the surface of an optical element such as a lens. This may cause a decrease in the performance of the exposure apparatus.

Further, impurity gases such as a sulfuric acid component, a nitric acid component, ammonia, amines, and siloxanes in the atmosphere are
There is a problem that the material is changed into a substance such as ammonium sulfate or ammonium nitrate by a reaction such as a photochemical reaction and adheres to the surface of an optical element such as a lens, thereby deteriorating the light use efficiency of the optical element.

In order to avoid such a problem, a projection exposure apparatus using an ArF excimer laser or the like as an exposure light has conventionally employed an atmosphere in the optical path of the exposure light as a nitrogen gas or a helium gas inert to a photochemical reaction. (For example, JP-A-6-260385,
(A technique disclosed in JP-A-6-260386).

Further, an F ₂ excimer laser (wavelength 157)
In a projection exposure apparatus that uses exposure light having a shorter wavelength, such as nm), the pressure in the atmosphere of the optical path of the exposure light is reduced to a state close to a vacuum state.

[0008]

However, the resist applied to the wafer on which the circuit pattern is to be transferred contains an organic solvent and impurities in the organic substance constituting the resist itself, and is inactive. Organic solvents, impurities, and the like volatilize and evaporate in the gas or in the space under reduced pressure.
As a result, there is a problem that the inside of the exposure system is contaminated, and the light utilization efficiency of the optical element is deteriorated due to a photochemical reaction with the exposure light. The present invention has been made in consideration of the above points, an exposure apparatus capable of suppressing volatile components in a photosensitive material applied to a substrate and stabilizing exposure performance,
An object of the present invention is to provide an exposure method, a substrate transfer method, and a semiconductor device.

[0009]

The invention according to claim 1 is
A pattern formed on the mask is illuminated with exposure light, and an image of the pattern is formed on a substrate (W) coated with a photosensitive substance (R).
An exposure apparatus (1,21,31) for transferring an image thereon, comprising a volatile component reduction processing section (V1, V2, V3) for reducing a volatile component contained in the photosensitive substance (R). It is characterized by:

According to such an exposure apparatus (1, 21, 31), in the volatile component reduction processing section (V1, V2, V3), for example, the substrate (W) is exposed to a space having a pressure lower than the atmospheric pressure. By subjecting the photosensitive material (R)
Volatile components contained therein can be reduced.

The invention according to claim 7 is an exposure method for illuminating a pattern formed on a mask with exposure light and transferring the pattern onto a substrate (W) coated with a photosensitive substance (R). Before transferring the pattern to the substrate (W), the volatile component contained in the photosensitive substance (R) is reduced.

According to such an exposure method, for example, the substrate (W) is exposed to a space having a pressure lower than the atmospheric pressure, and the like.
By reducing the volatile components contained in the photosensitive material (R), the volatilization amount of the volatile components at the time of the subsequent transfer of the pattern to the substrate (W) can be suppressed.

According to a ninth aspect of the present invention, the substrate (W) coated with the photosensitive substance (R) in the photosensitive substance coating section is formed by volatilization for reducing volatile components contained in the photosensitive substance (R). After passing through the component reduction processing sections (V1, V2, V3), the pattern formed on the mask is illuminated with exposure light and transported to the exposure section (11) for transfer onto the substrate (W). I have.

As a result, the substrate (W) that has passed through the volatile component reduction processing section (V1, V2, V3) is transported to the exposure section (11), and the photosensitive substance (R) applied to the substrate (W) is conveyed. ) Can suppress the amount of volatile components volatilized.

According to a tenth aspect of the present invention, there is provided a semiconductor device manufactured by illuminating a pattern formed on a mask with exposure light and transferring the pattern to a substrate (W).
Before the transfer of the pattern to the substrate (W), a volatile component reduction process for reducing a volatile component contained in the photosensitive substance (R) applied to the substrate (W) is performed. I have.

In the semiconductor device manufactured in this manner, the amount of volatile components in the photosensitive substance (R) applied to the substrate (W) is small in the exposure step.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, first to third embodiments of an exposure apparatus, an exposure method, a substrate transfer method, and a semiconductor device according to the present invention will be described with reference to FIGS. .

[First Embodiment] FIG. 1 schematically shows a configuration of a projection exposure apparatus according to a first embodiment of the present invention. In FIG. Exposure device), W is a wafer (substrate), 4 is a light source for emitting exposure light, 5 is an illumination optical system for irradiating a reticle (mask; not shown) with exposure light, 6 is a light source 4 and an illumination optical system 5 A light transmission system 7 disposed therebetween is a projection optical system that projects exposure light from a reticle (not shown) onto the wafer W.

The projection exposure apparatus 1 emits short-wavelength laser light such as an ArF light source excimer laser from the light source 4 as exposure light.

The illumination optical system 5 includes various lenses such as a fly-eye lens, a relay lens, and a condenser lens, a field stop, a blind, and the like. In the illumination optical system 5, the luminous flux of the exposure light emitted from the light source 4 and sent through the light transmission system 6 is made uniform, and the reticle (not shown) is irradiated with the exposure light. .

In the projection exposure apparatus 1, the optical path of exposure light from the light source 4 to the reticle (not shown), that is, the illumination optical system 5, the light transmitting system 6, and the periphery of the reticle (not shown)
It is surrounded by a casing 10. An inert gas that is inert to a photochemical reaction such as a nitrogen gas or a helium gas is supplied into the inside of the casing 10 through a supply pipe (not shown). Thereby, the illumination optical system 5
In the light transmitting system 6, the atmosphere of the optical path of the exposure light is replaced with an inert gas. The projection optical system 7 also has a configuration in which an inert gas is supplied into a lens barrel 7a forming the outer shell, and the atmosphere of the optical path of the exposure light is replaced with the inert gas. Further, the projection optical system 7 and the wafer W
Between the wafer stage (exposure unit) 11 on which
This casing 1 is covered by a casing 12.
2 is supplied with an inert gas. Thus, exposure of the wafer W from the projection lens of the projection optical system 7 is performed in an inert atmosphere.

In such a projection exposure apparatus 1, a vacuum processing apparatus (a volatile component reduction processing section, a decompression processing section) V
1 is provided. The vacuum processing apparatus V1 is arranged at a stage before a portion where a wafer W coated with a resist by a coater (not shown) in a previous process is mounted on a wafer carrier (carrier) 13. The wafer carrier 13 transports the wafer W coated with the resist into the projection exposure apparatus 1.

The vacuum processing apparatus V1 comprises a container 15 for accommodating the wafer W, a vacuum pump 16 for reducing the pressure in the container 15, and a control device (not shown) for controlling the operation of the vacuum pump 16. I have.

In the vacuum processing apparatus V 1, the vacuum pump 1
6 is operated by a control device (not shown), and is maintained for a predetermined time in a state where the pressure is reduced to a predetermined pressure lower than the atmospheric pressure (a state close to a vacuum state). Thereby, the container 1
The wafer W contained in the wafer 5 is exposed to a substantially vacuum state, and as a result, volatile components such as organic solvents and impurities in the resist applied to the wafer W are volatilized. That is, a resist generally includes an alkali-soluble resin, a dissolution inhibitor having an acid-decomposable group, and an acid precursor that generates an acid upon irradiation with exposure light such as ultraviolet light.
Further, it may contain a polymer dissolution inhibitor composed of a polyphenol compound, a hydroxystyrene polymer, an acrylic resin, styrene, and a copolymer of styrene and acrylic acid. appear.

In such a projection exposure apparatus 1, the wafer W coated with a resist on the surface by a coater (not shown) in the previous process is put into a vacuum processing apparatus V1 and subjected to the above-mentioned volatile component reduction processing. , And carried into the projection exposure apparatus 1. Then, in the projection exposure apparatus 1, the circuit pattern of the reticle (not shown) is projected and exposed on the wafer W via the projection optical system 7, and is transferred.

As described above, the volatile component in the resist applied to the wafer W is efficiently and reliably volatilized by performing the volatile component reducing process, more specifically, the vacuum process in the vacuum processing apparatus V1. be able to. Therefore, volatilization of organic substances and the like into the optical path atmosphere of the exposure light can be suppressed, and adhesion to the surface of the optical element due to a photochemical reaction is prevented, thereby preventing a decrease in the light use efficiency of the optical element. As a result, the projection exposure apparatus In step 1, stable exposure can be performed.

In the above-described first embodiment, the vacuum processing device V
1 is arranged, for example, the wafer carrier 1
It is also possible to adopt a configuration in which the wafer carrier 3 and the vacuum processing device V1 are also used as a configuration in which the vacuum pump 16 is provided in the closed container itself 3.

[Second Embodiment] In the second embodiment described below, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIG. 2, in the projection exposure apparatus (exposure apparatus) 21, a vacuum processing apparatus (volatile component reduction processing section, decompression processing section) V2 is provided inside the projection exposure apparatus 21. Specifically, the container 15 of the vacuum processing apparatus V2 is disposed at a portion where the wafer W mounted on the wafer carrier 13 is charged into the projection exposure apparatus 21. In this case, the vacuum pump 16 of the vacuum processing device V2
Is preferably arranged outside the projection exposure apparatus 21.

In the projection exposure apparatus 21 having such a configuration,
The wafer W to which the resist has been applied by the coater (not shown) in the preceding process is mounted on the wafer carrier 13, transported to the projection exposure apparatus 21, and transferred to the container 15 in the projection exposure apparatus 21. Here, similar to the first embodiment,
The vacuum pump 16 is operated in a state where the wafer W is contained in the container 15, and the wafer W is held at a predetermined pressure lower than the atmospheric pressure (a state close to a vacuum state) for a predetermined time so that the wafer W is substantially evacuated. When exposed to the state, a volatile component reduction process is performed, and volatile components such as organic solvents and impurities in the resist applied to the wafer W are volatilized. After this processing, the wafer W is transferred from the container 15 to the wafer stage 1 in the casing 12 by a loader (not shown).
1 and a predetermined exposure process is performed.

With the above-described configuration, the same effects as in the first embodiment can be obtained.

[Third Embodiment] Next, a third embodiment of the present invention will be described. In the third embodiment described below, components common to those in the first or second embodiment are denoted by the same reference numerals, and description thereof is omitted.

As shown in FIG. 3, in the projection exposure apparatus (exposure apparatus) 31, a vacuum processing apparatus (volatile component reduction processing section, decompression processing section) V3 is arranged inside the projection exposure apparatus 31. The projection exposure apparatus 31 includes a projection optical system 7.
A casing 12 is provided, which surrounds at least the front end portion of the wafer stage 11 and the wafer stage 11 integrally, and the atmosphere inside the casing 12 is replaced with an inert gas. Is provided.

The container 15 ′ is provided with a loading port 32 for loading the wafer W into the inside of the container 15, and a loading port 33 for feeding the wafer W into the casing 12. It is provided to face directly. The carry-in port 32 and the carry-out port 33 can be freely opened and closed by a control device (not shown). This allows
The inside of the container 15 ′ and the inside of the casing 12 are communicated and blocked.

In the projection exposure apparatus 31 having such a configuration,
The wafer W coated with the resist (photosensitive substance) R by the coater (not shown) in the previous process is loaded into the projection exposure apparatus 31 by a wafer carrier or the like (not shown). Then, the carry-in port 32 is opened, and after the wafer W is fed into the container 15 'by a loader or the like (not shown), the carry-in port 3 is opened.
Close 2.

Then, the vacuum pump 16 is operated with the wafer W stored in the container 15 ′, and the wafer W is maintained at a predetermined pressure lower than the atmospheric pressure (a state close to a vacuum state) for a predetermined time. The wafer W is exposed to a substantially vacuum state to perform a volatile component reduction process, thereby volatilizing volatile components such as an organic solvent and impurities in the resist R applied to the wafer W.

After the above processing is completed, the carry-out port 33 is opened, the wafer W is sent out to the wafer stage 11, and then the carry-out port 33 is closed. Thereafter, a predetermined exposure process is performed on wafer W on wafer stage 11.

With the above configuration, the same effects as those of the first and second embodiments can be obtained.

In the third embodiment described above,
The process of reducing the volatile components of the wafer W in the container 15 ′ may be performed on the wafer stage 11 during a standby time during which the exposure process of another preceding wafer W is being performed.

Further, an air lock device usually provided in the casing 12 in which replacement with an inert gas is performed,
It can also be used as the container 15 'of the vacuum processing device V3.

In the first to third embodiments, the vacuum pump 16 is provided with a control device (not shown), which controls the operation of the vacuum pump 16 to set the predetermined condition (vacuum). (A vacuum holding time). On the other hand, the following configuration is also possible.

As shown in FIG. 4, vacuum processing devices V1 to V
A sensor (detection means) 40 for monitoring the volatile components from the photosensitive substance in the gas composition in the containers 15 and 15 'constituting the third component 3 is provided. As the sensor 40, specifically, a water pressure sensor is provided for detecting moisture as an impurity, and a mass spectrometer or a gas chromatograph is provided for detecting an organic substance. Regarding the sensor 40, a sensor other than those described above may be used depending on the conditions to be detected. In such a configuration, the operation of the vacuum pump 16 is controlled by the control device (control means) 41 based on the detection result from the sensor 40 in accordance with the conditions in the containers 15, 15 '. For example, container 1
When the pressure in each of the containers 5 and 15 ′ falls below a predetermined value, the vacuum pump 16 is stopped to terminate the process, or the specific gas components such as water and organic substances in the containers 15 and 15 ′. When the value falls below the detection limit, control such as terminating the process is performed. According to the above configuration, it is possible to perform a more reliable and efficient volatile component reduction process.

In the first to third embodiments, the degree of vacuum and the vacuum holding time when performing the volatile component reduction treatment may be appropriately set according to the properties of the resist R.

Further, the atmosphere of the optical path of the exposure light is changed to an inert gas.
Was replaced, but of course F _TwoExcimer laser
Is used as the exposure light, the exposure light atmosphere
It is possible to use a so-called vacuum system that is reduced in pressure
In this case, the vacuum processing having the same configuration as above
It is possible to apply the devices V1 to V3.

Further, in each of the above-described embodiments, the system including the illumination optical system 5 and the light transmitting system 6 and the portion integrally surrounding the projection optical system 7 and the wafer stage 11 are formed as independent systems, respectively. , 12 and the lens barrel 7a are provided to perform the replacement with the inert gas. However, it is also possible to provide a structure in which these are integrated and covered by an integral casing.

The light source used as the exposure light is not limited to the ArF excimer laser (193 nm).
KrF excimer laser (248 nm), F ₂ laser (157 nm), harmonics of YAG laser or metal vapor laser, and charged particle beam such as X-ray, wavelength 5
Light in the soft X-ray region of ~ 20 nm (Extreme Ultra Violet
Light) can also be used.

In addition, for example, the projection exposure apparatus 1 may be a scanning type or a step-and-repeat type. Further, the type of the exposure apparatus is not limited to those for semiconductor manufacturing, for example,
The technology of the present invention can be widely applied to a projection exposure apparatus for liquid crystal that exposes a liquid crystal display element pattern to a square glass plate, an exposure apparatus for manufacturing a thin film magnetic head, and the like.

As described above, the exposure apparatus according to the embodiment of the present invention converts various subsystems including the components described in the claims of the present application into predetermined mechanical accuracy, electrical accuracy,
It is manufactured by assembling to maintain optical accuracy. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electrical systems to ensure these various accuracy Are adjusted to achieve electrical accuracy. The process of assembling the exposure apparatus from various subsystems includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. It goes without saying that there is an assembling process for each subsystem before the assembling process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are ensured. It is desirable that the manufacture of the exposure apparatus be performed in a clean room in which the temperature, cleanliness, and the like are controlled.

Other than this, any configuration may be adopted as long as it does not depart from the gist of the present invention, and it is needless to say that the above-described configurations may be appropriately selectively combined. No.

[0050]

As described above, according to the exposure apparatus of the first to fifth aspects, in the volatile component reduction processing section, for example, processing such as exposing the substrate to a space reduced in pressure below the atmospheric pressure is performed. Thereby, the volatile components contained in the photosensitive substance applied to the substrate can be reliably volatilized. Therefore, volatilization of organic substances and the like into the optical path atmosphere of the exposure light can be suppressed, contamination of the exposure environment can be prevented, and adhesion to the surface of the optical element due to a photochemical reaction can be prevented, thereby reducing the light use efficiency of the optical element. Thus, stable exposure can be performed.

According to the sixth aspect of the present invention, there is provided the detecting device for detecting the component volatilized from the photosensitive substance and the control device for controlling the volatile component reduction processing section based on the detection result. Thus, it is possible to more reliably and efficiently perform the volatile component reduction processing.

According to the exposure method of the seventh or eighth aspects, prior to transferring the pattern to the substrate, for example, exposing the substrate to a space depressurized from the atmospheric pressure or the like, By reducing the volatile components contained in the substance, volatilization of organic substances and the like into the optical path atmosphere of the exposure light can be suppressed. Therefore, contamination of the exposure environment is prevented, adhesion to the surface of the optical element due to a photochemical reaction is prevented, and a decrease in light use efficiency of the optical element is prevented. As a result, stable exposure can be performed.

According to the substrate transfer method of the ninth aspect,
Since the substrate that has passed through the volatile component reduction processing unit is transported to the exposure unit, the amount of volatile components volatilized from the photosensitive substance applied to the substrate can be suppressed. Therefore, it is possible to prevent the exposure light from being contaminated in the optical path atmosphere and to prevent the photochemical reaction from adhering to the surface of the optical element, thereby preventing a reduction in the light use efficiency of the optical element. It becomes possible.

According to the semiconductor device of the tenth aspect, at the time of manufacturing, the volatilization amount of volatile components from the photosensitive substance in the exposure step is small, and the adverse effect on the exposure apparatus for manufacturing this semiconductor device is also small. Therefore, the manufactured semiconductor device becomes stable and of high quality. In addition, it is possible to minimize the maintenance work of the exposure apparatus.

[Brief description of the drawings]

FIG. 1 is a view showing a first embodiment of an exposure apparatus, an exposure method, a method of transporting a substrate, and a semiconductor device according to the present invention, and is a configuration diagram of the exposure apparatus.

FIG. 2 is a view showing a second embodiment of an exposure apparatus, an exposure method, a substrate transfer method, and a semiconductor device according to the present invention, and is a configuration diagram of the exposure apparatus.

FIG. 3 is a view showing a third embodiment of an exposure apparatus, an exposure method, a substrate transfer method, and a semiconductor device according to the present invention, and is a configuration diagram of the exposure apparatus.

FIG. 4 is a view showing another example of an exposure apparatus, an exposure method, a substrate transfer method, and a semiconductor device according to the present invention, which is a configuration showing a volatile component reduction processing unit including a detection unit and a control unit. FIG.

[Explanation of symbols]

1, 21, 31 Projection exposure apparatus (exposure apparatus) 11 Wafer stage (exposure unit) 12 Casing 13 Wafer carrier (carrier) 40 Sensor (detection unit) 41 Control unit (control unit) R Resist (photosensitive substance) V1, V2 , V3 Vacuum processing unit (volatile component reduction processing unit, decompression processing unit) W Wafer (substrate)

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/30 515Z

Claims (10)

[Claims] 1. An exposure apparatus for illuminating a pattern formed on a mask with exposure light and transferring an image of the pattern onto a substrate coated with a photosensitive substance, comprising: An exposure apparatus comprising a volatile component reduction processing unit for reducing components. 2. The exposure apparatus according to claim 1, wherein a decompression processing unit that exposes the substrate to a space decompressed below atmospheric pressure is provided as the volatile component reduction processing unit. 3. The method according to claim 1, wherein the volatile component reduction processing unit is disposed outside the exposure apparatus and at a stage upstream of a part mounted on a carrier for carrying the substrate into the exposure apparatus. The exposure apparatus according to claim 1, wherein 4. The method according to claim 1, wherein the volatile component reduction processing unit is disposed inside the exposure apparatus and at a portion where the substrate mounted on a carrier is charged from the carrier into the exposure apparatus. The exposure apparatus according to claim 1 or 2, wherein 5. The exposure apparatus includes a casing surrounding at least a portion where the exposure light is illuminated on the substrate, and the inside of the casing is replaced with an inert gas inert to a photochemical reaction. 3. The exposure according to claim 1, wherein the space is reduced to a pressure lower than the atmospheric pressure, and the volatile component reduction processing unit is disposed in a portion where the substrate is put into the casing. 4. apparatus. 6. The volatile component reduction processing unit includes: a detection unit configured to detect a component volatilized from the photosensitive substance; and a control unit configured to control the volatile component reduction processing unit based on a detection result of the detection unit. The exposure apparatus according to claim 1, wherein the exposure apparatus is provided. 7. An exposure method for illuminating a pattern formed on a mask with exposure light and transferring the pattern onto a substrate coated with a photosensitive material, wherein the pattern is transferred to the substrate prior to transferring the pattern onto the substrate. An exposure method characterized by reducing volatile components contained in a volatile substance. 8. The exposure method according to claim 7, wherein the volatile component is reduced by exposing the substrate to a space whose pressure is lower than atmospheric pressure. 9. A pattern formed on a mask after passing a substrate coated with a photosensitive substance in a photosensitive substance coating section through a volatile component reduction processing section for reducing volatile components contained in the photosensitive substance. A method of transporting a substrate, comprising: illuminating with an exposure light and transporting the substrate to an exposure unit that transfers the light onto the substrate. 10. A semiconductor device manufactured by illuminating a pattern formed on a mask with exposure light and transferring the pattern to a substrate, wherein the semiconductor device is applied to the substrate before the pattern is transferred to the substrate. A volatile component reduction process for reducing volatile components contained in the photosensitive material.