JP2000299345A - Hybrid integrated circuit - Google Patents
Hybrid integrated circuitInfo
- Publication number
- JP2000299345A JP2000299345A JP11107507A JP10750799A JP2000299345A JP 2000299345 A JP2000299345 A JP 2000299345A JP 11107507 A JP11107507 A JP 11107507A JP 10750799 A JP10750799 A JP 10750799A JP 2000299345 A JP2000299345 A JP 2000299345A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- bonding
- wire
- hybrid integrated
- bonding wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板上に銅層とア
ルミニウム層とからなり前記銅層が基板側に設けられて
いる回路を有し、更に半導体素子等の電子・電気部品を
搭載した混成集積回路とそれに用いる回路基板に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention has a circuit comprising a copper layer and an aluminum layer on a substrate, wherein the copper layer is provided on the substrate side, and further includes electronic and electric components such as semiconductor elements. The present invention relates to a hybrid integrated circuit and a circuit board used therefor.
【０００２】[0002]
【従来の技術】一つの基板上に、半導体素子等の電子部
品と、必要に応じて、抵抗、コイル等の電気部品とを、
更に必要ならば、基板以外の電子・電気部品に、電気的
に接続する回路を設けてなる混成集積回路が知られてい
る。2. Description of the Related Art Electronic components such as semiconductor elements and, if necessary, electrical components such as resistors and coils are mounted on one substrate.
Further, if necessary, a hybrid integrated circuit in which a circuit for electrically connecting electronic and electric components other than the substrate is provided is known.
【０００３】混成集積回路は、一般的に図２に例示した
とおりに、電気絶縁性の基板上に、回路５が設けられ、
前記回路５の一部には半田６を介して半導体素子７が搭
載された構造を有している。また、半導体素子７は、回
路５の反対側でボンディングワイヤー８に接続され、更
に、前記ボンディングワイヤー８は、回路５の所望の位
置に設けられたボンディング用パッド部９で回路５と電
気的に接続されている。基板は表面が絶縁性を有してい
れば良く、表面に無機フィラーを含有する樹脂からなる
絶縁層２を設けた金属板１等も用いることができる。In a hybrid integrated circuit, a circuit 5 is provided on an electrically insulating substrate as shown in FIG.
Part of the circuit 5 has a structure in which a semiconductor element 7 is mounted via solder 6. Further, the semiconductor element 7 is connected to a bonding wire 8 on the opposite side of the circuit 5, and the bonding wire 8 is electrically connected to the circuit 5 by a bonding pad 9 provided at a desired position of the circuit 5. It is connected. The substrate only needs to have an insulating surface, and a metal plate 1 provided with an insulating layer 2 made of a resin containing an inorganic filler on the surface can also be used.
【０００４】ボンディングワイヤー８には、一般に、金
線或いはアルミニウム線が用いられる。一方、回路５に
は、電気良導性の銅が用いられ、前記ボンディングワイ
ヤーとの接続性を高めるために、回路５の表面にＮｉ、
Ａｕ、Ａｇ等の薄い層をメッキ等の手法で設けたり、或
いは、回路５を形成する際にアルミニウム−銅複合金属
箔をもちいることで、表面にアルミニウム層を有する銅
層からなる回路とすることなどの工夫が行われている。As the bonding wire 8, a gold wire or an aluminum wire is generally used. On the other hand, for the circuit 5, copper having good electrical conductivity is used. In order to enhance the connectivity with the bonding wire, Ni,
By providing a thin layer of Au, Ag, or the like by plating, or by using an aluminum-copper composite metal foil when forming the circuit 5, the circuit is formed of a copper layer having an aluminum layer on the surface. Some ingenuity has been done.
【０００５】しかし、これらの混成集積回路において
は、ボンディング用パッド部の表面高さが、隣接する回
路面の高さと概ね等しいために、ボンディング用パッド
部と半導体素子、或いはボンディング用パッド間同士を
ワイヤーボンディングする場合に、ボンディングワイヤ
ーと前記ボンディング用パッド部に隣接する回路表面と
の空間的距離が十分にとれず、ボンディングワイヤーと
ボンディング用パッド部に隣接する回路間で電気的な短
絡がしばしば発生する問題がある。However, in these hybrid integrated circuits, since the surface height of the bonding pad portion is substantially equal to the height of the adjacent circuit surface, the bonding pad portion and the semiconductor element or between the bonding pads are separated. When wire bonding is performed, the spatial distance between the bonding wire and the circuit surface adjacent to the bonding pad is not sufficient, and an electrical short circuit often occurs between the bonding wire and the circuit adjacent to the bonding pad. There is a problem to do.
【０００６】上記問題を回避するために、ボンディング
用パッド部に隣接する回路を５００μｍ以上離して設け
たり、ボンディング用パッド部に隣接する回路部分を樹
脂１０で包埋したり、ワイヤーボンディングする方向に
回路を設けない回路設計をしたり、ボンディングワイヤ
ーを設けた後ワイヤーを折曲げることで短絡を防止する
等のいろいろな工夫がされている。In order to avoid the above-mentioned problem, a circuit adjacent to the bonding pad portion is provided at a distance of 500 μm or more, a circuit portion adjacent to the bonding pad portion is embedded in the resin 10, or a wire bonding direction is reduced. Various measures have been taken such as designing a circuit without a circuit, or bending a wire after providing a bonding wire to prevent a short circuit.
【０００７】[0007]
【発明が解決しようとする課題】本発明は、上記の事情
に鑑みてなされたものであり、ボンディングワイヤーと
ボンディング用パッド部に隣接する回路表面との空間的
距離を確保し、ボンディングワイヤーとボンディング用
パッド部に隣接する回路間での電気的な短絡を確実に防
止するとともに、従来のものに比べて回路の高密度化、
従って高集積化が達成された、電気的信頼性に優れる混
成集積回路を提供することを目的としている。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has been made to secure a spatial distance between a bonding wire and a circuit surface adjacent to a bonding pad portion, and to form a bonding wire. To prevent electrical shorts between circuits adjacent to the pad, and to increase the density of the circuit compared to conventional ones.
Accordingly, it is an object of the present invention to provide a hybrid integrated circuit that achieves high integration and has excellent electrical reliability.
【０００８】[0008]
【課題を解決するための手段】本発明は、基板上に、ア
ルミニウム層と銅層とから構成され、少なくとも半導体
素子搭載部とワイヤーボンディング用パッド部とを有す
る回路が、前記銅層が基板側に対するように設けられて
なる回路基板と、前記回路の半導体素子搭載部上に搭載
された半導体素子と、前記半導体素子と回路とを電気的
に接続するボンディングワイヤーとを含む混成集積回路
であって、ボンディング用パッド部のボンディングワイ
ヤーの引出し方向に隣接する回路の表面が前記ボンディ
ング用パッド部表面よりも１０μｍ以上低く設けられて
いることを特徴とする混成集積回路である。According to the present invention, there is provided a circuit comprising an aluminum layer and a copper layer on a substrate, the circuit having at least a semiconductor element mounting portion and a wire bonding pad portion. And a semiconductor device mounted on a semiconductor device mounting portion of the circuit, and a bonding wire for electrically connecting the semiconductor device and the circuit. A surface of a circuit adjacent to a bonding pad in a direction in which a bonding wire is drawn out is lower than the surface of the bonding pad by 10 μm or more.
【０００９】また、本発明は、ボンディング用パッド部
のボンディングワイヤーの引出し方向に隣接する回路の
表面がボンディングワイヤーの下方２０μｍ以上離れて
配置されていることを特徴とする前記の混成集積回路で
ある。Further, the present invention is the above-mentioned hybrid integrated circuit, wherein the surface of the circuit adjacent to the bonding pad portion in the pull-out direction of the bonding wire is arranged at least 20 μm below the bonding wire. .
【００１０】また、本発明は、前記ボンディング用パッ
ド部のボンディングワイヤーの引出し方向に隣接する回
路のアルミニウム層が除去されていることを特徴とする
前記の混成集積回路であり、好ましくは、一つのボンデ
ィングワイヤーで接続されたボンディング用パッド同士
の間、若しくはボンディング用パッド部と半導体との間
の回路のアルミニウム層が５０μｍ〜４００μｍの回路
長さで除去されていることを特徴とする前記の混成集積
回路である。The present invention also provides the hybrid integrated circuit as described above, wherein an aluminum layer of a circuit adjacent to the bonding pad portion in a direction in which a bonding wire is drawn is removed. Wherein the aluminum layer of the circuit between the bonding pads connected by the bonding wires or between the bonding pad portion and the semiconductor is removed with a circuit length of 50 μm to 400 μm. Circuit.
【００１１】[0011]
【発明の実施の形態】本発明の混成集積回路を、図に基
づいて説明する。図１は、本発明の混成集積回路の一例
を示す断面図である。本発明の混成集積回路は、基板上
に、銅層３とアルミニウム層４とからなる回路５が前記
銅層３が前記基板に接するように形成されていて、前記
回路５上の一部（半導体素子搭載部）には半田６を介し
て半導体素子７が搭載され、また前記回路５の一部がボ
ンディング用パッド部９とされて、前記半導体素子７と
ボンディング用パッド部９、或いはボンディング用パッ
ド部９同士が、ボンディングワイヤー８により電気的に
接続された構造を有している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A hybrid integrated circuit according to the present invention will be described with reference to the drawings. FIG. 1 is a sectional view showing an example of the hybrid integrated circuit of the present invention. In the hybrid integrated circuit of the present invention, a circuit 5 composed of a copper layer 3 and an aluminum layer 4 is formed on a substrate such that the copper layer 3 is in contact with the substrate. A semiconductor element 7 is mounted on the element mounting portion via solder 6, and a part of the circuit 5 is used as a bonding pad 9, and the semiconductor element 7 and the bonding pad 9 or the bonding pad 9 are bonded. The parts 9 have a structure in which they are electrically connected by bonding wires 8.
【００１２】そして、ボンディング用パッド部９からボ
ンディングワイヤー８が引き出される方向に隣接してい
る回路５の表面高さ（図１において、ａで示した距離）
を、前記ボンディング用パッド部９の表面よりも１０μ
ｍ以上低くすることで、ボンディングワイヤー８とボン
ディング用パッド部９からボンディングワイヤー８が引
き出される方向に隣接している回路５の表面高さとの距
離（図１において、ｂで示した距離）を２０μｍ以上離
れることを確保している。The surface height of the circuit 5 adjacent to the direction in which the bonding wire 8 is pulled out from the bonding pad 9 (the distance indicated by a in FIG. 1)
10 μm from the surface of the bonding pad 9.
m, the distance between the bonding wire 8 and the surface height of the adjacent circuit 5 in the direction in which the bonding wire 8 is pulled out from the bonding pad 9 (the distance indicated by b in FIG. 1) is 20 μm. It is ensured that they are separated by more.
【００１３】前記構造を採用することにより、ボンディ
ングワイヤー８とボンディング用パッド部９のボンディ
ングワイヤー８が引き出される方向で隣接する回路５と
の空間距離が確保されるので、ボンディング用パッド部
９に隣接する回路５は２５０μｍ程度にまで近づけるこ
とが可能となり、ボンディング用パッド部９に隣接する
回路を不必要に離すことなく設けることができ、回路５
の高集積化が達成される。しかも、両者間での電気的短
絡を確実に防止することができ、従来行われていた、ボ
ンディング用パッド部に隣接する回路部分を樹脂で包埋
する等の工程が不必要となり、省略することができる。By employing the above structure, a spatial distance between the bonding wire 8 and the circuit 5 adjacent to the bonding pad portion 9 in the direction in which the bonding wire 8 is drawn out is ensured. The circuit 5 can be provided close to about 250 μm, and a circuit adjacent to the bonding pad 9 can be provided without unnecessary separation.
Is achieved. In addition, an electrical short circuit between the two can be reliably prevented, and the step of embedding the circuit portion adjacent to the bonding pad portion with resin, which has been conventionally performed, becomes unnecessary, and thus can be omitted. Can be.
【００１４】本発明において、前記構造を達成するに際
し、ボンディング用パッド部９からボンディングワイヤ
ー８が引き出される方向に隣接している回路５のアルミ
ニウム層４を除去することが好ましい。然るに、銅層３
とアルミニウム層４とからなる回路５を形成する場合、
例えば、アルミニウム、銅、鉄、或いはそれらの合金か
らなる金属板１上に、無機充填材を含有する樹脂からな
る絶縁層２を介して、銅層３とアルミニウム層４とから
なる複合箔を付着し、アルミニウム層４、銅層３を逐次
エッチングして回路５を形成する場合、前述のボンディ
ング用パッド部９のボンディングワイヤー８が引き出さ
れる方向で隣接する回路５のアルミニウム層４を前記エ
ッチング操作時に併せて除去することにより、新しい工
程を必要とせずに、前記構造を容易に達成できるからで
ある。In the present invention, in achieving the above structure, it is preferable to remove the aluminum layer 4 of the circuit 5 which is adjacent in the direction in which the bonding wire 8 is drawn out from the bonding pad 9. But copper layer 3
When the circuit 5 composed of and the aluminum layer 4 is formed,
For example, a composite foil composed of a copper layer 3 and an aluminum layer 4 is adhered to a metal plate 1 composed of aluminum, copper, iron, or an alloy thereof via an insulating layer 2 composed of a resin containing an inorganic filler. When the circuit 5 is formed by sequentially etching the aluminum layer 4 and the copper layer 3, the aluminum layer 4 of the circuit 5 adjacent to the bonding pad 8 in the direction in which the bonding wire 8 is drawn out during the etching operation is formed. This is because the above structure can be easily achieved without the necessity of a new step by removing at the same time.
【００１５】また、前記のアルミニウム層４を除去する
ことは、ボンディング用パッド部９のボンディングワイ
ヤー８が引き出される方向で隣接する回路５のみでな
く、ボンディングワイヤー８が繋ぐ、ボンディング用パ
ッド部と半導体素子、或いはボンディング用パッド部同
士の間の全ての回路について施すことができ、この場合
には、本発明の目的が更に確実に達成でき、好ましい。The removal of the aluminum layer 4 can be performed not only by the circuit 5 adjacent to the bonding pad 8 in the direction in which the bonding wire 8 is drawn out, but also by bonding the bonding wire 8 to the bonding pad. The method can be applied to all circuits between the elements or the bonding pad portions. In this case, the object of the present invention can be more reliably achieved, which is preferable.
【００１６】ここで、本発明において、ボンディングワ
イヤーと回路表面との距離、ワイヤーボンディング用パ
ッド部面と隣接する回路面との高さが特定の関係に維持
されるが、この関係は、本発明の目的達成のために、ワ
イヤーボンディング用パッド部におけるボンディングワ
イヤーの引出し方向と、引き出された該ボンディングワ
イヤーと並行する領域とに関して前記構成が確保されて
いれば良い。Here, in the present invention, the distance between the bonding wire and the circuit surface and the height between the wire bonding pad surface and the adjacent circuit surface are maintained in a specific relationship. In order to achieve the above object, it is sufficient that the above configuration is ensured with respect to the drawing direction of the bonding wire in the wire bonding pad portion and the region parallel to the drawn bonding wire.
【００１７】前記並行する領域の大きさについては、本
発明者の実験的な検討結果によれば、混成集積回路を上
方から眺めたときに、ボンディングワイヤーの両側の、
距離が少なくとも２５μｍ以内の領域において、前記要
件を満足していれば良い。また、本発明の目的をより確
実に達成するためには、前記領域の大きさが大きいこと
が望ましいが、一方で除去する必要のないアルミニウム
層を除去し、回路の電流容量が制限を受けることが生じ
ることもある。そのため、ボンディングワイヤーからの
距離は最大でも２００μｍを超える必要はない。好まし
い距離としては５０μｍ〜１５０μｍが選択される。According to experimental results of the inventor of the present invention, the size of the parallel region is, when the hybrid integrated circuit is viewed from above, on both sides of the bonding wire.
It suffices that the above requirement is satisfied in a region where the distance is at least within 25 μm. In order to more reliably achieve the object of the present invention, it is desirable that the size of the region is large, but on the other hand, the aluminum layer that does not need to be removed is removed, and the current capacity of the circuit is limited. May occur. Therefore, the distance from the bonding wire does not need to exceed 200 μm at the maximum. As a preferable distance, 50 μm to 150 μm is selected.
【００１８】上述の理由から、ワイヤーボンディング用
パッド部のボンディングワイヤーの引出し方向に隣接し
ている回路のアルミニウム層は、５０μｍ〜４００μｍ
の回路長さで除去されていることが好ましく、１００μ
ｍ〜３００μｍが一層好ましい。For the above reasons, the aluminum layer of the circuit adjacent to the wire bonding pad in the direction in which the bonding wire is drawn out has a thickness of 50 μm to 400 μm.
Is preferably removed with a circuit length of 100 μm.
m to 300 μm is more preferred.
【００１９】本発明において、基板としては、電気絶縁
性であればどのようなものでも良く、例えば、ガラス繊
維補強したエポキシ樹脂、ポリイミド樹脂などを用いる
ことができる。また、前述したとおりに、アルミニウ
ム、銅、鉄、或いはこれらの合金からなる金属板１上
に、アルミナ、シリカ、窒化ホウ素、窒化珪素、窒化ア
ルミニウム等の無機質充填材を含有した、エポキシ樹
脂、イミド樹脂等の樹脂からなる絶縁層２を設けた金属
ベース基板も勿論用いることができる。In the present invention, any substrate may be used as long as it is electrically insulating. For example, a glass fiber reinforced epoxy resin, polyimide resin, or the like can be used. Further, as described above, an epoxy resin, an imide containing an inorganic filler such as alumina, silica, boron nitride, silicon nitride, and aluminum nitride on a metal plate 1 made of aluminum, copper, iron, or an alloy thereof. Of course, a metal base substrate provided with an insulating layer 2 made of a resin such as a resin can also be used.
【００２０】また、ボンディングワイヤー８としては、
金線或いはアルミニウム線を用いることができるが、本
発明の混成集積回路はボンディング用パッド部９の表面
にアルミニウム層４を有するので、安価なアルミニウム
線を用いることができるので、安価な混成集積回路を提
供できるという効果もある。Further, as the bonding wire 8,
Although a gold wire or an aluminum wire can be used, the hybrid integrated circuit of the present invention has an aluminum layer 4 on the surface of the bonding pad portion 9 and thus can use an inexpensive aluminum wire. There is also an effect that can be provided.
【００２１】[0021]
【実施例】〔実施例〕厚さ１．５ｍｍのアルミニウム板
上に、酸化アルミニウム（昭和電工（株）社製「ＳＲ
Ｗ」）を５５体積％含有するビスフェノールＡ型エポキ
シ樹脂（油化シェル（株）社製「ＥＰ８２８」）を絶縁
層の厚さが５０μｍとなるように塗布し、アルミニウム
層と銅層との複合層からなる金属箔を銅層が絶縁層に接
するように配置し、加圧下で加熱することでエポキシ樹
脂を硬化し金属ベース基板を作製した。なお、前記金属
箔のアルミニウム層の厚さは４０μｍであり、銅層の厚
さは１０μｍである。EXAMPLE [Example] An aluminum oxide ("SR" manufactured by Showa Denko KK) was placed on an aluminum plate having a thickness of 1.5 mm.
B ") containing 55% by volume of bisphenol A type epoxy resin (" EP828 "manufactured by Yuka Shell Co., Ltd.) so that the thickness of the insulating layer is 50 μm, and a composite of an aluminum layer and a copper layer. A metal foil composed of layers was arranged so that the copper layer was in contact with the insulating layer, and the epoxy resin was cured by heating under pressure to produce a metal base substrate. In addition, the thickness of the aluminum layer of the metal foil is 40 μm, and the thickness of the copper layer is 10 μm.
【００２２】前記金属ベース基板のアルミニウム板裏面
にポリプロピレン製の樹脂シートを貼着した後、金属箔
上にスクリーン印刷法で所望の位置にエッチングレジス
トを設け、苛性ソーダ水溶液を用い前記金属箔のアルミ
ニウム層をエッチングし、レジストを除去した。After adhering a resin sheet made of polypropylene to the back surface of the aluminum plate of the metal base substrate, an etching resist is provided at a desired position on the metal foil by a screen printing method, and an aluminum layer of the metal foil is formed using an aqueous solution of caustic soda. Was etched to remove the resist.
【００２３】次に、露出した銅層の所望の位置にレジス
トを塗布し、硫酸（濃度１２０ｇ／ｌ）と過酸化水素水
（濃度４５ｇ／ｌ）の混液により銅層をエッチングし、
レジストを除去した。なお、本エッチング操作において
は、銅層上のレジストとともに、前記操作でエッチング
されなかったアルミニウム層もレジストとして役立たせ
た。Next, a resist is applied to a desired position of the exposed copper layer, and the copper layer is etched with a mixed solution of sulfuric acid (concentration: 120 g / l) and hydrogen peroxide solution (concentration: 45 g / l),
The resist was removed. In this etching operation, an aluminum layer not etched by the above operation was used as a resist together with the resist on the copper layer.
【００２４】更に、アルミニウム層上の所望の位置にス
クリーン印刷法でエッチングレジストを設け、苛性ソー
ダ水溶液でアルミニウム層の所望の部分をエッチングす
ることで、ワイヤーボンディング用パッド部同士の間の
回路、ワイヤーボンディング用パッド部のボンディング
ワイヤーの引出し方向で隣接する回路、さらに、ワイヤ
ーボンディング用パッド部と半導体素子搭載部との間に
位置する回路のアルミニウム層を除去した。その後、エ
ッチングレジスト並びに樹脂シートを除去して混成集積
回路用の金属ベース回路基板を得た。Further, an etching resist is provided at a desired position on the aluminum layer by a screen printing method, and a desired portion of the aluminum layer is etched with an aqueous solution of caustic soda to form a circuit between the wire bonding pad portions, a wire bonding process. The aluminum layer of the circuit adjacent to the bonding pad portion in the pull-out direction of the bonding wire and the circuit located between the wire bonding pad portion and the semiconductor element mounting portion were removed. Thereafter, the etching resist and the resin sheet were removed to obtain a metal-based circuit board for a hybrid integrated circuit.
【００２５】前記金属ベース回路基板の回路の半導体素
子搭載部に半田を介して半導体素子を搭載し、更に、半
導体素子表面と前記回路基板のワイヤーボンディング用
パッド部とを、従来公知の超音波法によりアルミニウム
線で電気的に接続し、混成集積回路を得た。A semiconductor element is mounted on the semiconductor element mounting portion of the circuit of the metal-based circuit board via solder, and further, the surface of the semiconductor element and the pad portion for wire bonding of the circuit board are connected to each other by a conventionally known ultrasonic method. And an aluminum wire was used to obtain a hybrid integrated circuit.
【００２６】上記操作で得た混成集積回路は、アルミニ
ウム線の接合されたパッド部と前記アルミニウム線が引
き出された方向で隣接する回路とが２５０μｍと、従来
（５００μｍ以上）の半分以下の距離に近接しているに
も拘わらず、この回路においてアルミニウム線と回路表
面とは８０μｍ以上の距離が確保されていて、アルミニ
ウム線と隣接回路とが電気的に短絡する恐れはなく、充
分に電気的信頼性を有していた。In the hybrid integrated circuit obtained by the above operation, the distance between the pad to which the aluminum wire is joined and the circuit adjacent in the direction in which the aluminum wire is drawn is 250 μm, which is less than half of the conventional (500 μm or more). Despite being close to each other, in this circuit, the distance between the aluminum wire and the circuit surface is 80 μm or more, and there is no possibility that the aluminum wire and the adjacent circuit are electrically short-circuited, and the electrical reliability is sufficient. Had the nature.
【００２７】[0027]
【発明の効果】本発明の混成集積回路は、ボンディング
用パッド部に隣接するボンディングワイヤーの引出し方
向にある回路を、ボンディング用パッド部の２５０μｍ
程度にまで近接して形成することができ、回路がより高
集積化されている特徴があるし、又、前記回路部分に樹
脂を被覆する、ボンディングワイヤーを変形させる等の
工程が不要であり、安価に提供されるという特徴を有し
ており、産業上有用である。According to the hybrid integrated circuit of the present invention, the circuit in the pull-out direction of the bonding wire adjacent to the bonding pad portion is set at 250 μm of the bonding pad portion.
It can be formed as close as possible to the extent that the circuit is more highly integrated, and it does not require steps such as coating the circuit portion with a resin or deforming the bonding wire. It has the feature of being provided at low cost and is industrially useful.
【図１】本発明の混成集積回路の一例を示す断面図。FIG. 1 is a sectional view showing an example of a hybrid integrated circuit of the present invention.
【図２】従来公知の混成集積回路の一例を示す断面図。FIG. 2 is a cross-sectional view showing an example of a conventionally known hybrid integrated circuit.
１ 金属板 ２ 絶縁層 ３ 回路（銅層） ４ 回路（アルミニウム層） ５ 回路 ６ 半田 ７ 半導体素子 ８ ボンディングワイヤー ９ 回路（ワイヤーボンディング用パッド部） １０ 樹脂 REFERENCE SIGNS LIST 1 metal plate 2 insulating layer 3 circuit (copper layer) 4 circuit (aluminum layer) 5 circuit 6 solder 7 semiconductor element 8 bonding wire 9 circuit (pad part for wire bonding) 10 resin
Claims (5)
成され、少なくとも半導体素子搭載部とワイヤーボンデ
ィング用パッド部とを有する回路が、前記銅層が基板側
に対するように設けられてなる回路基板と、前記回路の
半導体素子搭載部上に搭載された半導体素子と、前記半
導体素子と回路とを電気的に接続するボンディングワイ
ヤーとを含む混成集積回路であって、ボンディング用パ
ッド部のボンディングワイヤーの引出し方向に隣接する
回路の表面が前記ボンディング用パッド部表面よりも１
０μｍ以上低く設けられていることを特徴とする混成集
積回路。1. A circuit comprising, on a substrate, an aluminum layer and a copper layer, the circuit having at least a semiconductor element mounting portion and a wire bonding pad portion, wherein the copper layer is provided so as to face the substrate side. A hybrid integrated circuit including a substrate, a semiconductor element mounted on a semiconductor element mounting portion of the circuit, and a bonding wire for electrically connecting the semiconductor element and the circuit, wherein a bonding wire of a bonding pad portion is provided. The surface of the circuit adjacent in the pull-out direction is 1
A hybrid integrated circuit provided at a height of 0 μm or more.
イヤーの引出し方向に隣接する回路の表面がボンディン
グワイヤーの下方２０μｍ以上離れて配置されているこ
とを特徴とする請求項１記載の混成集積回路。2. The hybrid integrated circuit according to claim 1, wherein the surface of the circuit adjacent to the bonding pad in the direction in which the bonding wire is drawn out is separated from the bonding wire by 20 μm or more below the bonding wire.
イヤーの引出し方向に隣接する回路のアルミニウム層が
除去されていることを特徴とする請求項１又は請求項２
記載の混成集積回路。3. The circuit according to claim 1, wherein the aluminum layer of the circuit adjacent to the bonding pad in the direction in which the bonding wire is drawn out is removed.
A hybrid integrated circuit as described.
いるボンディング用パッド同士の間に位置する回路のア
ルミニウム層が５０〜４００μｍの回路長さ部分で除去
されていることを特徴とする請求項３記載の混成集積回
路。4. The circuit according to claim 3, wherein the aluminum layer of the circuit located between the bonding pads connected by one bonding wire is removed at a circuit length of 50 to 400 μm. Hybrid integrated circuit.
いるボンディング用パッド部と半導体素子との間に位置
する回路のアルミニウム層が５０〜４００μｍの回路長
さ部分で除去されていることを特徴とする請求項３記載
の混成集積回路。5. The semiconductor device according to claim 1, wherein the aluminum layer of the circuit located between the bonding pad portion and the semiconductor element connected by one bonding wire is removed at a circuit length of 50 to 400 μm. A hybrid integrated circuit according to claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10750799A JP3415788B2 (en) | 1999-04-15 | 1999-04-15 | Hybrid integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10750799A JP3415788B2 (en) | 1999-04-15 | 1999-04-15 | Hybrid integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000299345A true JP2000299345A (en) | 2000-10-24 |
| JP3415788B2 JP3415788B2 (en) | 2003-06-09 |
Family
ID=14460968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10750799A Expired - Fee Related JP3415788B2 (en) | 1999-04-15 | 1999-04-15 | Hybrid integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3415788B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009096041A (en) * | 2007-10-16 | 2009-05-07 | Sharp Corp | Ink jet head and ink jet head device |
-
1999
- 1999-04-15 JP JP10750799A patent/JP3415788B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009096041A (en) * | 2007-10-16 | 2009-05-07 | Sharp Corp | Ink jet head and ink jet head device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3415788B2 (en) | 2003-06-09 |
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