JP2000286407A - Solid-state image pickup device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize reduction in the resistance of readout electrodes for coping with reduction in the region of an image associated with a miniaturization of a solid-state image pickup device in the device of a structure, wherein the device is provided with the readout electrodes separately from vertical transfer electrodes. SOLUTION: Readout electrodes 1, which are hitherto formed only under the lower parts of vertical transfer electrodes and are limited their electrode width, are formed extendedly up to the upper parts of the vertical transfer electrodes 2 and 3, whereby the resistance of the electrodes 1 is reduced. Since these electrodes 1 contain polycrystalline silicon as the main component, new problems do not occur, such as reduction in the image quality of an image and the like, which is generated when the reduction in the resistance of the electrodes 1 is realized, when light-shielding films is used, for example, as the readout electrodes.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a solid-state imaging device and a method of manufacturing the same, and more particularly, to a solid-state imaging device using a charge transfer device (CCD) and a method of manufacturing the same.

[0002]

2. Description of the Related Art An example of charge transfer using a CCD in a conventional solid-state imaging device will be described below with reference to FIGS. In this solid-state imaging device, as shown in FIG. 13, photodiodes 104 are regularly arranged vertically and horizontally. As shown in FIGS. 14 and 15, in the semiconductor substrate (in the illustrated example, in the p-type well layer 111 provided on the n-type silicon substrate 113), together with the photodiode 104, a vertical charge transfer section (vertical charge transfer section) (A charge transfer channel) 105, a charge read control unit 106, and a separation unit 107.

In addition, in this solid-state imaging device, signal charges generated by the photoelectric conversion function of the photodiode 104 are
A read electrode 101 is formed on the charge read control unit 106 in order to apply a read voltage to the vertical charge transfer unit 105 via the read control unit 106. By applying a predetermined voltage pulse to the readout electrode 101, the signal charges are read out to the charge transfer unit 105. Further, by applying a voltage pulse of a predetermined pattern to the vertical transfer electrodes 102 and 103, the vertical charge transfer unit 105 is applied. Along the vertical transfer electrode (vertical transfer; in the example shown in FIG.
In the vertical direction).

In the illustrated solid-state imaging device, a separating unit 107 is provided to prevent unnecessary leakage of signal charges. Similarly, the readout electrode 101 can be used to prevent charge leakage. That is, a predetermined voltage is applied to the readout electrode 101 and the charge readout control unit 1
06 and the separation unit 107, the leakage of signal charges (blooming phenomenon) during vertical transfer can be effectively suppressed. As described above, the solid-state imaging device provided with the readout electrodes 101 separately from the vertical transfer electrodes 102 and 103 is suitable for stable transfer of charges. In particular, if signal charges are read at a low voltage so as to be advantageous in suppressing power consumption, the potential barrier of the charge read control unit 106 must be reduced, and the blooming phenomenon tends to be a problem. Therefore, a structure in which the readout electrodes are independently provided is particularly advantageous.

[0005] By the way, as the number of pixels and the size of the solid-state imaging device are increased, the area per pixel is decreasing. For this reason, the width of the read control unit 106 must be limited, and the read electrode 101 formed thereon is limited.
Has to be narrow. Under such circumstances, the resistance of the readout electrode 101 has increased, and it has become difficult to maintain the waveform of a voltage pulse for reading out charges externally applied. If the voltage is increased to compensate for such "rounding" of the pulse, power consumption increases.

On the other hand, Japanese Patent Laid-Open No. Hei 10-189936 proposes a method in which a light-shielding film is used as a reading electrode. The light-shielding film is a metal film formed on each of the electrodes so as to cover a region other than the light-receiving portion in order to shield unnecessary external light. If this film is used as a readout electrode, the resistance of the readout electrode can be reduced.

[0007]

However, when a light-shielding film made of metal is used as a read electrode as disclosed in Japanese Patent Application Laid-Open No. Hei 10-189936, the following problems occur. First, when a metal film is formed close to a silicon substrate, this film becomes a source of contamination to the silicon substrate and induces lattice defects in silicon, which tends to cause a so-called dark current. Second, a defect generated in the light receiving portion due to the film stress of the metal film causes an image defect called a white flaw. Third, in addition to such image defects, it is difficult to pattern the readout electrode with a light-shielding film that basically needs to cover the entire area other than the light receiving section, and the operation of the solid-state imaging device is also limited. Is added.

Therefore, the present invention solves the above problems,
Even if the solid-state imaging device is miniaturized and the number of pixels is increased, it is possible to read out signal charges from the light receiving portion with a voltage of the related art without causing defects on an image or restrictions on operation. It is an object to provide a solid-state imaging device having a structure and a method for manufacturing the same.

[0009]

In order to achieve the above object, in a solid-state imaging device according to the present invention, a readout electrode mainly composed of polycrystalline silicon (hereinafter referred to as "polysilicon") is provided on a vertical transfer electrode. By forming such a structure, the resistance of the readout electrode can be reduced.

That is, in the solid-state imaging device according to the present invention, the light receiving sections formed in the semiconductor substrate so as to be arranged in a matrix and the light receiving sections extend between the light receiving sections along the rows of the light receiving sections. A vertical charge transfer section (vertical charge transfer channel) formed in the semiconductor substrate, and disposed on the semiconductor substrate so that a voltage for transferring signal charges in the vertical charge transfer section in a vertical direction can be applied. A vertical transfer electrode, a charge readout control unit formed in the semiconductor substrate between the light receiving unit and the vertical charge transfer unit, and a signal charge stored in the light receiving unit via the charge readout control unit. A read electrode mainly composed of polysilicon, which is disposed on the semiconductor substrate so that a voltage for reading from the light receiving unit to the vertical charge transfer unit can be applied to the charge read control unit. The solid-state imaging device was e,
The read electrode is disposed so as to extend from above the charge read control unit to above the vertical transfer electrode.

According to this solid-state imaging device, the area of the readout electrode can be expanded more than before and the resistance of this electrode can be reduced. Further, since a metal film for light shielding is not used as a readout electrode, there is no accompanying defect on an image or restriction on operation.

In one embodiment of the solid-state imaging device according to the present invention, the readout electrode is arranged adjacent to all the ends of the light receiving section on the side from which the signal charges are read out. By using the read electrodes arranged in this manner, the potential of the region between the light receiving section and the charge transfer section is stabilized as described above, while reducing the resistance of the read electrodes, thereby eliminating unnecessary light from the light receiving section. It is possible to suppress the leakage of a large charge.

In another embodiment of the solid-state imaging device of the present invention,
The readout electrode is disposed adjacent to only a part of an end of the light receiving unit on a side from which the signal charge is read out. By arranging the readout electrodes in this manner, it becomes easy to secure a light-collecting range of the light receiving unit.

In order to secure the focusing range of the light receiving section while reducing the resistance of the readout electrode, specifically, the readout electrode extends vertically from a part of the end of the light receiving section adjacent thereto. The readout electrode is arranged in a first region extending on the vertical transfer electrode along a horizontal direction perpendicular to the direction, and a second region on the vertical transfer electrode connecting the regions to each other. Is preferred. As described above, it is preferable that the readout electrode be formed so as to be close to the light receiving portion only in a range necessary for charge reading, and to be retreated so as not to limit the light collecting range of the light receiving portion in other ranges.

In one embodiment of the solid-state imaging device according to the present invention, the vertical transfer electrodes are arranged so as not to spread on the charge readout control unit. In another aspect of the present invention, the vertical transfer electrodes are arranged so as to extend from above the vertical charge transfer section to a part of the charge readout control section. In the latter mode, a stepwise potential can be easily applied to the charge readout control unit by using the vertical transfer electrode and the readout electrode. The stepwise application of the potential enables efficient reading of the signal charges. On the other hand, when designing so that the application of the potential is not necessary, the former mode is preferable.

In the latter case, the width L ₁ in the horizontal direction of the region where the vertical transfer electrode and the charge read control unit overlap each other is less than half the width of the charge read control unit in the horizontal direction. Preferably, there is. According to this preferred example, it becomes easy to effectively suppress the blooming phenomenon.

Further, in the solid-state imaging device according to the present invention, a distance H in a sectional direction between the vertical transfer electrode and the semiconductor substrate is provided.
₁ is preferably smaller than the distance between the cross-sectional direction of the distance of H ₂ between the semiconductor substrate and the readout electrode.
This is because it is easy to gradually apply the potential to the charge readout control unit.

In the solid-state imaging device according to the present invention, the readout electrodes may be arranged along the vertical direction.
They may be arranged along the horizontal direction. In any case, if the readout electrodes are patterned so as to be arranged between the respective light receiving sections along a predetermined direction, the degree of freedom of the operation of the solid-state imaging device can be easily secured.

According to another aspect of the present invention, there is provided a method for manufacturing a solid-state imaging device, comprising the steps of: Forming a vertical charge transfer section extending along a column of light receiving sections, and a charge readout control section between the light receiving section and the vertical charge transfer section; and forming a first polycrystalline silicon on the semiconductor substrate. Forming a film and pattern etching to form a vertical transfer electrode for applying a voltage for transferring charges in the vertical charge transfer portion in the vertical direction; and forming a second transfer electrode on the semiconductor substrate. By forming a polycrystalline silicon film and etching it into a pattern extending from above the charge readout control unit to above the vertical transfer electrode, from the light receiving unit through the charge readout control unit, Characterized in that it comprises a step of forming a readout electrode for applying a voltage for reading out the signal charge to the charge transferring portion to the charge readout control unit.

According to this method, it is possible to manufacture a solid-state image pickup device in which the formation area of the readout electrode is expanded and the resistance of this electrode is reduced, without causing defects on the image and restrictions on operation.

In the method of manufacturing a solid-state imaging device according to the present invention, an insulating film is formed on at least the charge readout control unit after forming the vertical transfer electrodes and before forming the readout electrodes. , the cross-sectional direction distance H ₁ between the semiconductor substrate and the vertical transfer electrode at the time of forming the readout electrode, than the distance between the cross-sectional direction of the distance of H ₂ between the read electrode and the semiconductor substrate It is preferable that the method further includes a step of adjusting a distance between the semiconductor substrate and the two electrodes so as to reduce the distance. This is because it is possible to manufacture a solid-state imaging device in which it is easy to gradually apply a potential to the charge readout control unit.

[0022]

Preferred embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) As shown in FIGS. 1 to 3, a solid-state imaging device according to the present embodiment includes a photodiode 4 having a photoelectric conversion function regularly and vertically (in other words, in a horizontal direction). They are formed in a semiconductor substrate so as to be arranged in a matrix. Although not shown in FIG. 1, as shown in FIGS. 2 and 3, as shown in FIGS. 2 and 3, in the semiconductor substrate, along with the photodiodes 4, the space between the photodiodes 4 extends in the vertical direction (the vertical direction in FIG. An extending vertical charge transfer section (vertical charge transfer channel) 5 is formed. In the semiconductor substrate between the vertical charge transfer unit 5 and the photodiode 4, a charge readout control unit 6 and a separation unit 7 are formed.

In this embodiment, the photodiode 4, the vertical charge transfer section 5, the charge read control section 6, and the separation section 7 are provided in the p-type well layer 11 provided on the n-type silicon substrate 13. In this case, the photodiode 4 and the vertical charge transfer unit 5 are n-type diffusion regions, and the charge readout control unit 6 and the separation unit 7 are p-type diffusion regions (the p-type well layer is a p ⁻ region, and the charge readout control unit is ,
The isolation portion is formed to be a p ⁺ region.

On the vertical charge transfer section 5, a first vertical transfer electrode 2 and a second vertical transfer electrode 3 are arranged to transfer charges vertically along the vertical charge transfer section. In this embodiment, two layers of vertical transfer electrodes are used.
Three or more layers of electrodes may be used.

The readout electrode 1 is disposed on the charge readout control unit 6. By applying the voltage from the readout electrode 1, the potential of the charge readout control unit 6 is controlled, and charges are read from the photodiode 4 to the charge transfer unit 5.

The read electrode 1, the first vertical transfer electrode 2 and the second vertical transfer electrode 3 are all made of polysilicon, but a trace component may be added as appropriate. In these overlapping portions, the first vertical transfer electrode 2, the second vertical transfer electrode 3, and the readout electrode 1 are stacked in this order from the substrate side. As described above, it is preferable that the readout electrode 1 be formed so as to at least partially overlap the vertical transfer electrode after forming the vertical transfer electrode.

In this solid-state imaging device, the read electrode 1
Are formed so as to cover a part of the vertical transfer electrodes 2 and 3. As described above, the resistance of the readout electrode 1 is lower than that of the related art, because the readout electrode 1 is formed up to a region exceeding the width of the charge readout control unit 6.

In FIGS. 1 to 3, the insulating film, the light shielding film,
Components of the solid-state imaging device, such as a color filter film and a flattening film, which are not necessary for the above description, are not shown. For example, in FIG. 2 and FIG. 3, between the read electrode 1 and the vertical transfer electrodes 2 and 3 and the semiconductor substrate (p-type well layer 11), a silicon oxide film, a silicon nitride film, or the like is appropriately selected. One or two or more insulating films are formed.

(Second Embodiment) A solid-state imaging device according to a second embodiment will be described with reference to FIGS. The solid-state imaging device according to the present embodiment, as shown in FIG. 4, except that the readout electrode 1 is disposed so as to be in contact with all sides (ends) on the readout side of the photodiode 4.
It has the same configuration as the first embodiment. As shown in FIG. 6, in this solid-state imaging device, the readout electrode 1 is also arranged on the separation section 7 formed on the readout side.

The advantages and disadvantages of the solid-state imaging device according to the first embodiment and the solid-state imaging device according to the second embodiment will be described below. The first embodiment is advantageous from the viewpoint of securing the light collection range on the photodiode 4. That is,
In the first embodiment, as shown in FIG. 1, the readout electrode 1 is not in contact with the entire readout end (one side along the readout vertical direction) of the photodiode 4.
The readout electrode 1 is formed so as to be adjacent to the photodiode 4 in a region where the charge readout control unit 6 is provided (FIG. 2 showing a cross section in FIG. 1A-A), but in a region where the separation unit 7 is provided. It is provided receding on the vertical transfer electrode 7 (FIG. 3 showing a cross section of FIG. 1B-B). As described above, the reading electrode 1 is partially removed from a part of the region adjacent to the photodiode 4.
When it is retracted, it becomes easy to secure a focusing range on the photodiode.

FIGS. 7A and 7B schematically show the upper structure of a solid-state imaging device having the same configuration as that of FIGS.
8 and FIG. 8, the focusing range of the photodiode 4 is compared. As is apparent from comparison between the two figures, in the second embodiment, when the light shielding film 10 is formed, the light condensing range W ′ of the photodiode 4 by the on-chip lens 14 is limited (FIG. 8), but the first embodiment is not limited to the first embodiment. In the embodiment, since a part of the readout electrode 1 is recessed, even if the light shielding film 10 made of a metal such as aluminum or tungsten is formed, the light condensing range W
Is not restricted (FIG. 7).

On the other hand, the second embodiment is advantageous from the viewpoint of suppressing the leakage of charges from the photodiode 4 during the vertical transfer of charges. In the second embodiment, the read electrode 1 is formed so as to be in contact with all the read-side ends of the photodiode. Therefore, the blooming phenomenon can be effectively prevented by applying a predetermined potential to the readout electrode 1 as a barrier against leakage of signal charges to the readout electrode 1 during the vertical transfer to stabilize the potential of the charge readout control unit 6. Can be suppressed.

As is apparent from a comparison between FIG. 1 and FIG. 4, from the viewpoint of further lowering the resistance value of the readout electrode 1, it is easy to secure a wide width of the readout electrode 1 over the entire length. The second embodiment is advantageous. If it is desired to further reduce the resistance value of the readout electrode 1, the width of the readout electrode 1 may be further increased than shown.

(Third Embodiment) In each of the above embodiments, a description has been given of the form in which the readout electrodes are arranged in the column (vertical) direction of the photodiodes. A mode in which the readout electrodes are arranged in a direction (perpendicular to) will be described.

As shown in FIG. 9, in the solid-state imaging device according to the present embodiment, the read-out electrodes 1 are arranged in the horizontal direction of the photodiode 4 (the left-right direction in FIG. 9). It has substantially the same configuration as the solid-state imaging device of the embodiment. The EE cross section of the solid-state imaging device in FIG.
It is the same as FIG.

As in this solid-state imaging device, even if the read electrodes 1 are arranged in the horizontal direction, if the read electrodes 1 are formed so as to extend over the vertical transfer electrodes 2 and 3, the read electrodes 1 are lower than in the prior art. Resistance can be achieved.

Also, in the present embodiment, as in the first embodiment, the read electrode 1 is not in contact with a part of the read-side end of the photodiode 4. Therefore, it is easy to secure the light collecting range of the photodiode 4. This point is also common to the first embodiment, but the readout electrode 1
Is formed in a region extending from a part of the end on the reading side of the photodiode 4 to over the vertical transfer electrodes 2 and 3, and is formed only on the vertical transfer electrodes 2 and 3 in other regions. . The formation of the readout electrode 1 in this manner is advantageous for securing a light focusing range.

However, when importance is placed on suppressing the blooming phenomenon, for example, in the present embodiment, as in the second embodiment, the readout electrode 1 is arranged so as to be adjacent to all of the readout side ends of the photodiode 4. Is preferably provided.

When the readout electrodes 1 are arranged in the horizontal direction as in this embodiment, only the pixels on the required line can be read out from the pixels arranged in the vertical direction. Therefore, it is possible to cope with a pixel thinning mode such as a monitor mode.

(Fourth Embodiment) In this embodiment, a structure for more efficiently reading charges from a photodiode will be described. FIG.
FIG. 13 is an enlarged cross-sectional view showing the vicinity of a charge readout control unit 6 of a solid-state imaging device having the structure described in the third embodiment (corresponding to the enlarged views of FIGS. 2 and 5).

As shown in FIG. 10, in this embodiment,
The width of the region where the first vertical transfer electrodes 2 and charge reading control unit 6 overlap is designed to be L _1. If there is a region where the vertical transfer electrodes overlap each other above the charge readout section 6, a voltage can be applied to the charge readout control section 6 using both electrodes. Therefore, in this overlap region,
For example, when reading out signal charges from the photodiode 4, the potential can be set deeper than in a region to which a voltage is applied from the readout electrode 1. By providing a step in the potential in the charge reading control unit in this manner, efficient reading of signal charges can be realized.

If the overlap between the first vertical transfer electrode 2 and the charge readout control section 6 is too large, it is difficult to prevent the leakage of the charge from the photodiode during the vertical transfer of the charge. . Therefore, L ₁ is
It is preferable that the width be equal to or less than half the width of the charge readout control unit 6.

In this embodiment, as shown in FIG. 10, the surface of the semiconductor substrate (p-type well layer 11) is
Of the vertical transfer electrode 2 and the lower end of the readout electrode 1 in the sectional direction are H ₁ and H ₂ (where H ₁ <
H ₂ ). Even in such a mode, in the region where the vertical transfer electrodes overlap, it is easy to set the potential deeper, so that efficient reading of the signal charges can be easily realized. In particular, in this case, at the time of reading the charge from the photodiode, (V _C = V ₂ in FIG. 10) even if the same voltage is applied to the vertical transfer electrodes and the read-out electrodes can produce a level difference in the potential .

(Fifth Embodiment) In this embodiment, an example of a method for manufacturing a solid-state imaging device according to the present invention will be described. As shown in FIG. 11, first, ions are appropriately applied to the p-type well layer 11 formed on the n-type silicon substrate 13 so as to form the predetermined n-type or p-type diffusion region as described above. By injection, the photodiode 4, the vertical charge transfer unit 5, the charge readout control unit 6, and the separation unit 7 are formed.
1 (a)). Further, a silicon oxide film 31 formed by a thermal oxidation method and a chemical vapor deposition method (CV) are formed on the surface of the p-type well layer 11.
D method), a silicon oxide film 33 formed by a thermal oxidation method, and a first polysilicon film 34 formed by a CVD method are formed in this order (FIG. 11B).

Next, the polysilicon film 34 for the vertical transfer electrode and the silicon oxide film 33 are removed by etching from above the photodiode 4 and a part of the charge read control unit 6 (FIG. 11C). Furthermore, the vertical transfer electrode polysilicon film 34 is thermally oxidized to further form a silicon oxide film 35 (FIG. 11D). A read electrode polysilicon film 36 is formed on the silicon oxide film 35 by CVD.
The readout electrode polysilicon film 36 is removed from above the photodiode 4 (FIG. 11).
(E)). Thus, the polysilicon film 34 serving as the first vertical transfer electrode and the polysilicon film 3 serving as the readout electrode
6 is realized.

Although a step for forming a cross section corresponding to FIG. 2 and the like has been described, it has been omitted above, but in addition to the above-described steps, a step for forming the second vertical transfer electrode 3, the light-shielding film 10, and the like has been added as appropriate. Thus, a solid-state imaging device is manufactured. In addition, the insulating film 31 on the silicon substrate formed in the above process,
32 and 33 are not limited to this configuration. For example, the silicon nitride film 32 is preferably formed to suppress so-called gate bird's beak which is likely to occur in the thermal oxidation step of the vertical transfer electrode polysilicon film 34, but is not an essential layer.

In the method described above, as shown in FIG. 11E, the distance between the vertical transfer electrode polysilicon film 34 (vertical transfer electrode film) and the silicon substrate is changed to the read electrode polysilicon. The distance becomes larger than the distance between the film 36 (readout electrode) and the silicon substrate. Although not shown, in practice, the exposed silicon nitride film 32 is slightly removed by the etching in the step of FIG.

On the other hand, as shown in FIG. 10, when it is desired to reverse the relationship of the distance, a further layer is stacked at least above the charge readout control unit 6 as in the step shown in FIG. Is preferred. Specifically, for example,
After a silicon nitride film 37 is grown on the silicon oxide film 35 by the CVD method (FIG. 12 (e) '), a polysilicon film 38 for a readout electrode is formed by forming a polysilicon film 38 for a vertical transfer electrode. The distance between the transfer electrode film 34 and the silicon substrate can be made relatively smaller than the distance between the readout electrode polysilicon film (readout electrode) 38 and the silicon substrate (FIG. 12F ').

[0050]

As described above, according to the present invention,
Since the read electrode mainly composed of polysilicon is formed so as to extend over the vertical transfer electrode, it is possible to provide a solid-state imaging device in which the resistance of the read electrode is reduced without causing image defects or restrictions on operation. This solid-state imaging device meets the demand for lower voltage, higher pixels, and smaller size,
This enables securing or improving the characteristics of the solid-state imaging device, and is extremely useful in industry.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating one embodiment of a solid-state imaging device according to the present invention.

FIG. 2 is a sectional view taken along line AA of the solid-state imaging device shown in FIG.

FIG. 3 is a sectional view of the solid-state imaging device taken along line BB of FIG. 1;

FIG. 4 is a plan view showing another embodiment of the solid-state imaging device of the present invention.

5 is a cross-sectional view of the solid-state imaging device shown in FIG. 2 taken along line CC.

6 is a cross-sectional view of the solid-state imaging device shown in FIG.

FIG. 7 is a diagram for explaining an upper structure of a solid-state imaging device having a configuration similar to that of FIG. 3;

FIG. 8 is a diagram for explaining an upper structure of a solid-state imaging device having a configuration similar to that of FIG. 6;

FIG. 9 is a plan view showing still another embodiment of the solid-state imaging device of the present invention.

FIG. 10 is a cross-sectional view showing, in an enlarged manner, the vicinity of a charge readout control unit for describing a preferred embodiment of the solid-state imaging device of the present invention.

FIG. 11 is a process chart showing one embodiment of a method for manufacturing a solid-state imaging device of the present invention.

FIG. 12 is a process chart for illustrating another embodiment of the method for manufacturing a solid-state imaging device of the present invention.

FIG. 13 is a plan view illustrating one embodiment of a conventional solid-state imaging device.

14 is a sectional view of the solid-state imaging device taken along line GG shown in FIG.

FIG. 15 is a cross-sectional view of the solid-state imaging device taken along line HH shown in FIG. 13;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Readout electrode 2 1st vertical transfer electrode 3 2nd vertical transfer electrode 4 Photodiode (light receiving part) 5 Vertical charge transfer part (vertical charge transfer channel) 6 Charge readout control part 7 Separation part 10 Light shielding film 11 p-type well Layer 13 n-type silicon substrate 14 on-chip lens

Claims (12)

[Claims] 1. A light receiving portion formed in a semiconductor substrate so as to be arranged in a matrix, and a vertical portion formed in the semiconductor substrate so as to extend between the light receiving portions along a row of the light receiving portions. A charge transfer unit; a vertical transfer electrode disposed on the semiconductor substrate so that a voltage for transferring signal charges in the vertical charge transfer unit in a vertical direction can be applied; the light receiving unit and the vertical charge transfer unit And a charge readout control unit formed in the semiconductor substrate between the light readout control unit and the signal charge control unit for reading out signal charges accumulated in the light receiving unit from the light reception unit to the vertical charge transfer unit via the charge readout control unit. A read electrode mainly composed of polycrystalline silicon, which is disposed on the semiconductor substrate so that a voltage can be applied to the charge read control unit, wherein the read electrode is The solid-state imaging device, characterized in that the load reading control unit on which is disposed to extend up onto the vertical transfer electrodes. 2. The solid-state imaging device according to claim 1, wherein the readout electrode is arranged adjacent to all the ends of the light receiving unit on the signal charge readout side. 3. The solid-state imaging device according to claim 1, wherein the readout electrode is disposed adjacent only to a part of an end of the light receiving unit on a side from which the signal charge is read out. 4. A first region extending from a part of the end portion of the light receiving portion adjacent to the readout electrode to the vertical transfer electrode along a horizontal direction orthogonal to the vertical direction, 4. The solid-state imaging device according to claim 3, wherein the readout electrode is disposed in a second region on the vertical transfer electrode that connects the regions to each other. 5. 5. The vertical transfer electrode is arranged so as not to spread on the charge readout control unit.
5. The solid-state imaging device according to any one of items 1 to 4, 6. The solid-state imaging device according to claim 1, wherein said vertical transfer electrodes are arranged to extend from above said vertical charge transfer section to a part above said charge readout control section. . 7. A width L ₁ in the horizontal direction of a region where the vertical transfer electrode and the charge readout control unit overlap _{each other.}
7. The solid-state imaging device according to claim 6, wherein the width is equal to or less than half the width of the charge readout control unit in the horizontal direction. 8. The semiconductor device according to claim 7, wherein the vertical transfer electrode is connected to the semiconductor substrate.
Distance H in cross section between ₁But the readout electrode and the half
Distance H in cross section between conductor substrate_TwoCharges less than
Item 8. The solid-state imaging device according to any one of Items 1 to 7. 9. The solid-state imaging device according to claim 1, wherein said readout electrodes are arranged along said vertical direction. 10. The solid-state imaging device according to claim 1, wherein said readout electrodes are arranged along said horizontal direction. 11. A light receiving unit arranged in a matrix in a semiconductor substrate by an ion implantation method, a vertical charge transfer unit extending between the light receiving units along a column of the light receiving unit, and Forming a charge readout control unit between the vertical charge transfer unit and the vertical charge transfer unit by forming a first polycrystalline silicon film on the semiconductor substrate and pattern-etching the same; Forming a vertical transfer electrode for applying a voltage for transferring electric charges to the semiconductor substrate; and forming a second polycrystalline silicon film on the semiconductor substrate to form a vertical transfer electrode By etching into a pattern that spreads over the electrodes, a voltage for reading signal charges from the light receiving unit to the charge transfer unit via the charge read control unit is applied to the charge read control unit. Forming a readout electrode for pressing,
A method for manufacturing a solid-state imaging device including: 12. After forming the vertical transfer electrode and before forming the readout electrode, an insulating film is formed on at least the charge readout control unit, so that when the readout electrode is formed, distance H ₁ in the cross-sectional direction between the vertical transfer electrodes and the semiconductor substrate, the cross-sectional direction of the distance of H ₂ between the semiconductor substrate and the readout electrode
The method of manufacturing a solid-state imaging device according to claim 11, further comprising: adjusting a distance in a cross-sectional direction between the semiconductor substrate and the two electrodes so as to be smaller than the above.