JP2000269512A5 - - Google Patents
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- JP2000269512A5 JP2000269512A5 JP2000002622A JP2000002622A JP2000269512A5 JP 2000269512 A5 JP2000269512 A5 JP 2000269512A5 JP 2000002622 A JP2000002622 A JP 2000002622A JP 2000002622 A JP2000002622 A JP 2000002622A JP 2000269512 A5 JP2000269512 A5 JP 2000269512A5
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000002622A JP4860021B2 (ja) | 1999-01-11 | 2000-01-11 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1999004761 | 1999-01-11 | ||
JP476199 | 1999-01-11 | ||
JP11-4761 | 1999-01-11 | ||
JP2000002622A JP4860021B2 (ja) | 1999-01-11 | 2000-01-11 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000269512A JP2000269512A (ja) | 2000-09-29 |
JP2000269512A5 true JP2000269512A5 (sk) | 2007-03-01 |
JP4860021B2 JP4860021B2 (ja) | 2012-01-25 |
Family
ID=26338594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000002622A Expired - Fee Related JP4860021B2 (ja) | 1999-01-11 | 2000-01-11 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4860021B2 (sk) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW525216B (en) | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
JP3961240B2 (ja) * | 2001-06-28 | 2007-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR100699987B1 (ko) * | 2001-08-06 | 2007-03-26 | 삼성에스디아이 주식회사 | 높은 캐패시턴스를 갖는 평판표시소자 및 그의 제조방법 |
US7285459B2 (en) | 2001-08-06 | 2007-10-23 | Samsung Sdi Co., Ltd. | Flat panel display with high capacitance and method of manufacturing the same |
TW559868B (en) * | 2001-08-27 | 2003-11-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
KR100929666B1 (ko) * | 2002-01-03 | 2009-12-03 | 삼성전자주식회사 | 액정 표시 장치 및 그 제조 방법 |
JP5105690B2 (ja) * | 2002-03-26 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6853052B2 (en) | 2002-03-26 | 2005-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a buffer layer against stress |
TWI475667B (zh) * | 2005-03-28 | 2015-03-01 | Semiconductor Energy Lab | 記憶裝置和其製造方法 |
US7994000B2 (en) | 2007-02-27 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP5477303B2 (ja) * | 2011-01-12 | 2014-04-23 | 信越化学工業株式会社 | 太陽電池の製造方法 |
JP5613717B2 (ja) * | 2012-04-25 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置、モジュール及び電子機器 |
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2000
- 2000-01-11 JP JP2000002622A patent/JP4860021B2/ja not_active Expired - Fee Related