JP2000268768A - 集束イオンビーム装置 - Google Patents

集束イオンビーム装置

Info

Publication number
JP2000268768A
JP2000268768A JP11073147A JP7314799A JP2000268768A JP 2000268768 A JP2000268768 A JP 2000268768A JP 11073147 A JP11073147 A JP 11073147A JP 7314799 A JP7314799 A JP 7314799A JP 2000268768 A JP2000268768 A JP 2000268768A
Authority
JP
Japan
Prior art keywords
defect
image
sem
wafer
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11073147A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000268768A5 (enrdf_load_stackoverflow
Inventor
Takeshi Onishi
毅 大西
Hidemi Koike
英巳 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11073147A priority Critical patent/JP2000268768A/ja
Publication of JP2000268768A publication Critical patent/JP2000268768A/ja
Publication of JP2000268768A5 publication Critical patent/JP2000268768A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP11073147A 1999-03-18 1999-03-18 集束イオンビーム装置 Pending JP2000268768A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11073147A JP2000268768A (ja) 1999-03-18 1999-03-18 集束イオンビーム装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11073147A JP2000268768A (ja) 1999-03-18 1999-03-18 集束イオンビーム装置

Publications (2)

Publication Number Publication Date
JP2000268768A true JP2000268768A (ja) 2000-09-29
JP2000268768A5 JP2000268768A5 (enrdf_load_stackoverflow) 2005-04-07

Family

ID=13509805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11073147A Pending JP2000268768A (ja) 1999-03-18 1999-03-18 集束イオンビーム装置

Country Status (1)

Country Link
JP (1) JP2000268768A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1355143A2 (de) * 2002-04-18 2003-10-22 EMPA Eidgenössische Materialprüfungs- und Forschungsanstalt Verfahren zur Präparation einer TEM-Lamelle
JP2005537683A (ja) * 2002-08-27 2005-12-08 ケーエルエー−テンカー テクノロジィース コーポレイション 電子ビームを用いたエッチングにおける終点検出ための方法および装置
JP2006506816A (ja) * 2002-11-12 2006-02-23 エフ・イ−・アイ・カンパニー 欠陥分析器
JP2010507783A (ja) * 2006-10-20 2010-03-11 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを作成する方法およびサンプル構造
JP2011198581A (ja) * 2010-03-18 2011-10-06 Sii Nanotechnology Inc 複合荷電粒子加工観察装置
US8357913B2 (en) 2006-10-20 2013-01-22 Fei Company Method and apparatus for sample extraction and handling
CN103545231A (zh) * 2013-10-21 2014-01-29 上海华力微电子有限公司 镍侵蚀缺陷在线检测方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1355143A2 (de) * 2002-04-18 2003-10-22 EMPA Eidgenössische Materialprüfungs- und Forschungsanstalt Verfahren zur Präparation einer TEM-Lamelle
JP2005537683A (ja) * 2002-08-27 2005-12-08 ケーエルエー−テンカー テクノロジィース コーポレイション 電子ビームを用いたエッチングにおける終点検出ための方法および装置
JP2011199323A (ja) * 2002-11-12 2011-10-06 Fei Co 欠陥分析器
JP2006506816A (ja) * 2002-11-12 2006-02-23 エフ・イ−・アイ・カンパニー 欠陥分析器
US7987072B2 (en) 2002-11-12 2011-07-26 Fei Company Defect analyzer
US8249828B2 (en) 2002-11-12 2012-08-21 Fei Company Defect analyzer
US8357913B2 (en) 2006-10-20 2013-01-22 Fei Company Method and apparatus for sample extraction and handling
JP2010507783A (ja) * 2006-10-20 2010-03-11 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを作成する方法およびサンプル構造
US8525137B2 (en) 2006-10-20 2013-09-03 Fei Company Method for creating S/TEM sample and sample structure
US8890064B2 (en) 2006-10-20 2014-11-18 Fei Company Method for S/TEM sample analysis
US8993962B2 (en) 2006-10-20 2015-03-31 Fei Company Method and apparatus for sample extraction and handling
US9275831B2 (en) 2006-10-20 2016-03-01 Fei Company Method for S/TEM sample analysis
US9336985B2 (en) 2006-10-20 2016-05-10 Fei Company Method for creating S/TEM sample and sample structure
US9349570B2 (en) 2006-10-20 2016-05-24 Fei Company Method and apparatus for sample extraction and handling
US9581526B2 (en) 2006-10-20 2017-02-28 Fei Company Method for S/TEM sample analysis
JP2011198581A (ja) * 2010-03-18 2011-10-06 Sii Nanotechnology Inc 複合荷電粒子加工観察装置
CN103545231A (zh) * 2013-10-21 2014-01-29 上海华力微电子有限公司 镍侵蚀缺陷在线检测方法

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