JP2000260722A - Substrate-processing method and substrate-processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate-processing method and a substrate-processing apparatus capable of obtaining processed substrates, having satisfactory characteristics at low cost and with high productivity by allowing their temperature to be increased within a short period of time, without causing abnormalities of heating means such as damages. SOLUTION: This substrate-processing apparatus has a processing chamber, a processing space provided within the processing chamber, a mechanism for transferring a substrate at least within the processing chamber, and a mechanism for heating the substrate. In this apparatus, the mechanism for heating the substrate comprises auxiliary heating means constituted of a lamp heater 113 for heating the substrate before the substrate is transferred into the processing space, and a main heating means constructed of a plate heater 114 or sheath heater for heating parts of the substrate which has been transferred into the processing space.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus. The present invention includes a deposited film forming apparatus, a deposited film forming method, a plasma processing apparatus, and a plasma processing method. More specifically, the present invention relates to a deposited film continuous forming apparatus, a deposited film continuous forming method, a plasma CVD apparatus, a plasma CVD method, a sputtering apparatus, a sputtering method, a deposited film forming apparatus for a photovoltaic element, A method for forming a deposited film for an electromotive element is included.

2. Description of the Related Art Conventionally, as a functional thin film manufacturing apparatus for continuously forming a thin film on the surface of a strip-shaped substrate, for example, a continuous deposited film forming method employing a roll-to-roll method Is disclosed in U.S. Pat. No. 4,400,409.
In this manufacturing apparatus, a plurality of film forming spaces are provided, and a sufficiently long band-shaped substrate having a desired width is continuously conveyed in a longitudinal direction of the band-shaped substrate along a path sequentially penetrating the film forming space. It describes that an element having a semiconductor junction can be continuously formed. Further, the film formation space is installed in a plurality of film formation chambers that maintain a reduced pressure state,
A gas gate is provided between each of the film forming chambers in order to prevent a film forming gas or a dopant gas used for forming each thin film layer from diffusing or mixing into another film forming space. What is a gas gate?
Each of the film forming chambers is connected by a slit-shaped separation passage, and a flow of a separation gas such as Ar or H ₂ is formed in the separation passage. In addition, in order to heat the members constituting the film formation space or the strip-shaped substrate to a desired temperature to form a deposited film, the plurality of film formation chambers are brought into contact with, for example, a sheath heater in contact with the members constituting the film formation space. Heating it,
In order to heat the continuously transported strip-shaped substrate in a non-contact manner, there is provided means for heating by heat radiation from a lamp heater. In particular, since the lamp heater can easily be increased in temperature and density, and has a high radiant energy intensity, and can raise the temperature of the strip-shaped substrate in a short time, the device is not suitable for a roll-to-roll type device configuration. There is an advantage that the total length can be reduced. With these configurations, the roll-to-roll deposition film forming apparatus is suitable for mass production of semiconductor devices such as photovoltaic devices and functional thin films.
However, in order to spread the photovoltaic element in large quantities, it is desired to further improve the photoelectric conversion efficiency, the property stability and the property uniformity, and reduce the manufacturing cost.

[0002]

As described above, when a lamp heater is used as a heating method for a strip-shaped substrate, the strip-shaped substrate can be heated in a short time, so that there is an advantage that the apparatus can be miniaturized. However, for example, when a lamp heater having a structure in which a heating wire is sealed in a quartz tube or the like is operated at a high temperature in a film forming chamber of a plasma CVD apparatus,
In some cases, the source gas present in the film formation chamber is thermally decomposed and a film is deposited on the surface of the lamp heater. If the heat radiation efficiency of the lamp heater decreases as a result,
Lamp heaters need to be cleaned or replaced periodically. Furthermore, since the lamp heater is made of a quartz tube, the mechanical strength is weak, and the quartz tube may be damaged during cleaning or may be damaged due to thermal stress with a film deposited during the heating operation. In such a case, it is necessary to stop the apparatus and perform maintenance, so that the operation rate is lowered particularly in the production apparatus. Further, in terms of the uniformity of the film forming temperature, when the band-shaped substrate is heated by a plurality of lamp heaters in the film forming space, a temperature difference is generated between a part close to the lamp heater and a part distant from the lamp heater. The rise and fall of the temperature of the belt-like substrate has been one of the causes of deteriorating the characteristics of the deposited film. Further, when only a sheath heater having high mechanical strength is used as a preheating and heating method for the strip-shaped substrate, the sheathed heater cannot be heated to a relatively high temperature, so that the strip-shaped substrate is heated to a temperature of about 300 ° C. required by plasma CVD. It takes a long time to perform this operation, and the overall length of the apparatus increases.

[0003] Such a problem is not limited to the deposited film forming apparatus. For example, the problem of damage during cleaning of the lamp heater and the problem of temperature difference when using the lamp heater are common to all substrate processing apparatuses using the lamp heater.

Accordingly, the present invention solves such a problem, and can raise the temperature in a short time without any trouble such as breakage of the heating means, and has high productivity at low cost and good characteristics. It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of obtaining a processed substrate.

[0005]

According to the present invention, there is provided a processing chamber, a processing space provided in the processing chamber, a mechanism for transporting a substrate at least in the processing chamber, and a mechanism for processing a substrate in the processing space. And a mechanism for heating the substrate, wherein the mechanism for heating the substrate is a preheating means comprising a lamp heater for heating the substrate before the substrate is carried into the processing space. And a main heating means comprising a plate heater or a sheath heater for heating a portion of the substrate carried into the processing space. Also, the present invention
A substrate having a processing chamber, a processing space provided in the processing chamber, a mechanism for transporting a substrate in at least the processing chamber, a mechanism for performing substrate processing in the processing space, and a mechanism for heating the substrate In the substrate processing method using a processing apparatus, a step of heating the substrate by a pre-heating unit including a lamp heater before the substrate is loaded into the processing space; and loading the substrate into the processing space. A substrate processing method characterized by including at least a step of heating a portion by a main heating means including a plate heater or a sheath heater. In the substrate processing apparatus and the substrate processing method of the present invention, it is preferable that the preliminary heating means is provided in the processing chamber and heats the substrate in the processing chamber. Also,
It is preferable to provide a reflector on the opposite side of the heating means from the substrate. Such a reflection plate is preferably provided in a region facing the substrate in a direction perpendicular to the substrate transfer direction, and is not provided in a region facing the central portion of the substrate. It is preferable to provide a plurality of plate heaters as the main heating means. It is preferable that a plurality of plate heaters are provided along the substrate transport direction. Further, the distance in the transport direction of the substrate between the end of the area where the substrate is heated by the preheating means and the beginning of the area where the substrate is heated by the main heating means, It is preferable that the distance of the region where the substrate is heated is shorter than the distance in the transport direction of the substrate. As the substrate treatment of the present invention, a treatment involving plasma generation is preferable. Further, when the present invention is applied to substrate processing involving formation of a deposited film, it is effective in that the problem of film deposition on a lamp heater can be solved. The present invention provides a plasma CV
The present invention can be suitably applied to a film forming apparatus and a film forming method using a method D or a sputtering method. Further, the present invention is suitably used when a belt-like substrate is used as the substrate and the belt-like substrate is transported in the longitudinal direction.

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In a preferred embodiment of the present invention, a substrate is first heated by preheating means provided outside the vicinity of a processing space. Without any obstacles such as
The substrate can be rapidly heated to a temperature close to the substrate temperature required for substrate processing, and the substrate thus preheated is continuously transported, and a heating wire is applied to a metal tube in the processing space. By the present heating means including a sheath heater or a heater such as a sheath heater, which is electrically insulated and sealed, and fixed to a metal plate, it is possible to perform heating at a uniformly stable temperature. Further, by arranging the distance between the outlet of the preheating means and the entrance of the main heating means shorter than the distance of the heating area of the preheating means, the substrate temperature is not reduced between the two heating means. Is transported to the processing space, so that a stable substrate temperature can be obtained and a processed substrate having good characteristics can be obtained.

[0007] The substrate processing apparatus of the present invention comprises a plasma CVD apparatus.
Equipment, thermal CVD equipment, vapor deposition equipment, sputtering equipment,
It includes a film forming device such as a vapor phase epitaxial growth device, an etching device, a lamination device, an annealing device, and a coating device. Further, the substrate processing method of the present invention includes a film forming method such as a plasma CVD method, a thermal CVD method, an evaporation method, a sputtering method, a vapor phase epitaxial method, an etching method, a lamination method, an annealing method, and a coating method. .

In the following, plasma CVD, which is an example of a substrate processing in which the effects of the present invention are very effective, will be described as an example, and plasma CVD, which is an example of a substrate processing apparatus of the present invention, will be described.
A method for forming a deposited film using a plasma CVD method, which is an example of a substrate processing method of the present invention, will be described. Hereinafter, the "processing chamber" and the "processing space" in the apparatus of the present invention may be described as a "film forming chamber" and a "film forming space", respectively. When applied, the term “film formation chamber” in the following description should be read as “processing chamber”, and the term “film formation space” should be read as “processing space”.

An embodiment of the present invention will be described below with reference to the accompanying drawings. A roll-to-roll type apparatus can be cited as an example of a deposited film continuous forming apparatus which is an example of the substrate processing apparatus of the present invention. In this apparatus, the strip-shaped substrate is continuously transported in a plurality of film forming chambers in the longitudinal direction of the strip-shaped substrate to form an element. Examples of the film deposition method of the apparatus include plasma CVD and sputtering. Examples of the thin film element include various photovoltaic elements such as a semiconductor integrated circuit, various semiconductor sensors, and a solar cell. In particular, the device of the present invention is suitable for manufacturing a solar cell requiring a large-area light receiving unit. The photovoltaic element is
For example, the layer configuration shown in FIG. 7, that is, on the surface of a substrate 700 formed of a strip-shaped substrate, a back reflection layer 701, a transparent conductive film 702, an n-type semiconductor layer 703, an i-type semiconductor layer 704, p
It has a layer configuration in which each layer of a mold semiconductor layer 705 and a transparent conductive film 706 is sequentially deposited, and a current collecting electrode 707 is formed thereon.

Next, FIG. 2 is a schematic cross-sectional view of a roll-to-roll type apparatus capable of forming such an element. In FIG. 2, reference numerals 201, 202, and 203 denote a film forming chamber formed by a plasma CVD method, 100 denotes a belt-shaped substrate delivery chamber, and 204 denotes a winding chamber. The respective film forming chambers are connected by a gas gate 206. Reference numeral 100 denotes a band-shaped substrate, which passes through three film forming chambers before being transported from the delivery chamber to the winding chamber, and has a three-layer functional deposition film, for example, a photovoltaic layer having a pin structure on its surface. It is formed. 2
Each of the film forming chambers 01 to 203 is provided with each unit shown in FIG. 1, and a deposited film is formed by a plasma CVD method. Further, by using a similar roll-to-roll apparatus configuration, a deposited film can be formed by a sputtering method. In FIG. 1, 100
Is a strip-shaped substrate, 101 is a film formation chamber, 102 is a gas gate, 1
Numeral 03 denotes a separation gas introduction pipe, 104 denotes a magnet roller, 105 denotes a film formation space, 106 denotes a film formation gas introduction pipe for introducing a film formation gas supplied from gas supply means (not shown) into the film formation chamber, 107 Is an exhaust pipe for exhausting the film formation chamber by an exhaust means (not shown), 108 is an exhaust adjustment valve for adjusting the pressure in the film formation chamber, and 109 is plasma discharge by applying energy to the film formation gas in the film formation chamber. A high-frequency electrode for supplying high-frequency electric power for generating a film; 110, a wall heater for heating a member forming a film forming space; 111, a thermocouple;
2 is a pressure gauge for measuring the pressure in the film forming space 105, 113 is a lamp heater unit which is a preheating means, 1
14 is a plate heater which is the main heating means, 11
5 is a reflection plate.

In the roll-to-roll type apparatus, the band-shaped substrate 100 wound around the delivery core 205 disposed in the delivery chamber 200 passes through a plurality of film formation spaces and is provided in the winding chamber 204. It is wound around the take-up core 208 in a coil shape and transported. By winding the interleaving paper 207 at the same time as the winding, the film-forming surface of the belt-like substrate can be protected. As the material of the interleaf paper, a heat-resistant resin such as polyimide-based, Teflon-based and glass wool is preferably used. It is important that the strip-shaped substrate is conveyed through the plurality of film forming spaces at a constant speed without causing wrinkles, twists, warpage, and the like in the plane. When the band-shaped substrate is magnetized, for example, the band-shaped substrate 100 is supported by using a rotatable magnet roller 104 made of a magnetic material as shown in FIG.
0 can be conveyed along a desired route while maintaining a constant shape. The transport speed is appropriately selected depending on the film formation conditions (such as the thickness and the formation speed of the semiconductor film), but is preferably from 200 mm / min to 5000 mm / min. In some cases, a plurality of thin film layers of different materials are formed by continuously providing a plurality of film forming chambers. In this case, a gas gate 102 (described later) is provided between the film forming chambers as shown in FIG. 206), a means for preventing the influence of the adjacent film forming chamber is used. The gas gate 102 is provided for the purpose of separating and independently separating the delivery chamber and the take-up chamber of the band-shaped substrate from the film formation chamber, and for continuously transporting the band-shaped substrate through the inside thereof. . Gas gate 1
Reference numeral 02 denotes a structure in which the band-shaped substrate 100 penetrates a slit-shaped space, and a predetermined gap is provided between the band-shaped substrate 100 and the deposition surface of the band-shaped substrate. This gap is used to reduce the conductance and prevent gas diffusion and mixing between the deposition chambers.
For example, it is preferable to set the width to 1 to 5 mm. Furthermore,
A gas for separation is introduced into the gas gate from the gas introduction pipe 103 for separation, and the film formation gas that enters the gas gate from the film formation chamber is pushed back. Examples of the separation gas include Ar, He, Ne, Kr, Xe, and R.
and a rare gas such as n or a diluent gas for forming a semiconductor film such as H ₂ . The flow rate of the separation gas is appropriately determined based on the conductance of the entire gas gate, for example,
If a point where the pressure is maximized is provided at the approximate center of the gas gate, the separation gas flows from the center of the gas gate to the film forming chambers on both sides, and the mutual gas diffusion between the film forming chambers on both sides occurs. Can be minimized.

In the present invention, it is preferable that the strip-shaped substrate has little deformation and distortion at a temperature required for producing a deposited film, has a desired strength, and has conductivity. Specific examples include a thin metal plate such as stainless steel, aluminum and its alloy, iron and its alloy, copper and its alloy, and a composite thereof. Also, polyimide, polyamide, polyethylene terephthalate,
Examples thereof include those obtained by subjecting a surface of a heat-resistant resin sheet such as an epoxy or the like to a conductive treatment by a method such as sputtering, vapor deposition, plating, or coating with a simple metal or alloy, a transparent conductive oxide (TCO), or the like. Further, as long as the thickness of the band-shaped substrate is within a range that exhibits strength that maintains a path and a shape formed at the time of transfer by the transfer unit, the thickness is as thin as possible in consideration of cost, storage space, and the like. Is more desirable. Specifically, preferably 0.01 mm to 1 m
m, and most preferably 0.05 mm to 0.5 mm. However, when a thin plate of metal or the like is used, a desired strength is easily obtained even if the thickness is relatively thin. The width of the strip-shaped substrate is not particularly limited, and is determined by the size of the deposited film forming means or the size of the container or the like.
The length of the band-shaped substrate is not particularly limited, and may be any length as long as it can be wound into a roll shape, and may be a longer one that is made longer by welding or the like. good.

Next, the means for heating the strip-shaped substrate of the present invention will be described with reference to FIG. First, the belt-shaped substrate 100 is conveyed from the delivery chamber, passes through the gas gate 102, and then enters the film formation chamber 101. At this point, the belt-shaped substrate is approximately at room temperature. Before entering the film forming space 105, for example, 150 ° C. to 600 ° C. required by a plasma CVD method.
It is necessary to heat the strip substrate to a temperature around ℃,
Before entering the film forming space, the lamp heater unit 113
By preheating using the substrate, the strip-shaped substrate is rapidly heated to the above-mentioned temperature. FIG. 3 shows the structure of the lamp heater unit 113. The quartz tube 30 is used as the lamp heater 300.
One having a structure in which the heating wire 302 is sealed in 1 can be suitably used. Preferably, a plurality of lamp heaters 300 are arranged side by side in the substrate transport direction and fixed to the reflection plate 303 with a heater fixing jig 304 to form the lamp heater unit 113. In order to improve the temperature uniformity in the substrate width direction, the reflecting plate 30 is arranged in a direction orthogonal to the longitudinal direction of the lamp heater 300.
3 is effective. Since the response between the power applied to the heating wire 302 and the amount of heat radiated from the lamp heater 300 is fast, a method of controlling the temperature of the lamp heater 300 includes, for example, a thyristor capable of continuously changing the power when using AC power. It is desirable to perform the used power control. Thereby, the temperature in the longitudinal direction of the band-shaped substrate 100 can be made uniform. Next, the strip-shaped substrate 100 is transported outside the heating area of the lamp heater unit 113,
The substrate is transported between the lamp heater unit 113 and the plate heater 114. At this time, the substrate temperature decreases due to heat radiation from the belt-like substrate itself. With this temperature drop,
When transported to the film formation space 105, an appropriate substrate temperature may not be obtained. To prevent this, the strip-shaped substrate 10
It is possible to obtain an appropriate substrate temperature by making the distance from 0 exiting the heating area of the lamp heater unit to entering the heating area of the plate heater shorter than the distance corresponding to the heating area in the transport direction of the lamp heater unit. it can. Further, in order to prevent cooling by the separation gas or the like, the lamp heater is preferably provided in the same film forming chamber as the main heating unit.

Next, the belt-shaped substrate 100 is transported to the film forming space 105. The substrate temperature is determined by radiant heat from the plate heater 114, radiant heat from members surrounding the substrate, heat conduction by atmospheric gas, and plasma. It is determined by heat conduction and heat flow through the substrate surface reaction. In addition, since the belt-like substrate moves at a constant speed by being conveyed, it is necessary to precisely control the distribution of the amount of heat to be applied so that the substrate temperature becomes a desired distribution while moving in the film formation space. . Desirable substrate temperature distributions vary depending on the plasma generation method and the layer structure of the deposited film. In general, there are cases where the substrate temperature is kept constant or a temperature gradient is intentionally provided.

In the present invention, a plate heater 114 is used as a heating unit for heating the band-shaped substrate 100 in the film forming space 105. The structure of the plate heater 114 of this example will be described with reference to FIG. A sheath heater 400 having a structure in which a heating wire is electrically insulated and sealed in a metal tube is attached to a metal plate 401.
And the unit is disposed at a portion facing the band-shaped substrate in the film forming space. The temperature on the surface of the metal plate 401 is made uniform by heat conduction inside the metal plate 401. For this reason, the belt-shaped substrate being transported receives a certain amount of radiant heat, so that the substrate temperature is stabilized, and the substrate temperature in the longitudinal direction of the belt-shaped substrate 100 is reduced as in the case where a plurality of lamp heaters are used as a heating means for this portion. No unevenness occurs. Since the response between the power applied to the sheath heater 400 and the amount of heat radiated from the plate heater 114 is slow, the temperature control method of the sheath heater 400 is as follows.
Simple ON / OF for power control of sheath heater 400
Even if the F control is used, a stable substrate temperature can be obtained. For example, the cost of the device can be reduced by using an inexpensive solid state relay instead of an expensive thyristor for power control. Since both ends of the plate heater 114 with respect to the substrate transfer direction dissipate more heat than the central portion, as a means for compensating for this, a reflecting plate 402 having a structure in which a single or a plurality of metal plates are stacked is provided by a band-like substrate By disposing only the portions (hatched portions in the figure) corresponding to both ends in the width direction, the uniformity of the temperature in the width direction of the band-shaped substrate can be further improved.

If the temperature uniformity does not have to be a problem, the reflector may be provided on the entire surface facing the metal plate, the metal plate may be provided only on one of the sheath heaters, or the plate heater may be used instead of the plate heater. May be provided with a sheath heater as it is. Further, a plate heater in which a sheath heater is embedded in a metal plate, or a plate heater in which a lamp heater is provided on the back of the metal plate may be provided. This is because the film deposition can be prevented). In the example described above, the metal plate can be replaced with a plate made of another material having high thermal conductivity.

Further, as shown in FIG.
The plate heater 114 installed on the upper side is divided into a plurality of parts in the transport direction, and the temperature is individually controlled using the thermocouples 111, so that the temperature distribution in the transport direction of the strip substrate can be made uniform. Alternatively, it is possible to easily achieve the intentional temperature gradient of the substrate temperature, and it is possible to improve the characteristics of the deposited film as an element. When a temperature gradient is provided in the width direction of the substrate, the plate heater may be divided in the width direction of the substrate. In the film formation space, the temperature of the plate heater 114 is set to the substrate temperature required for film formation because the band-shaped substrate is already heated to a temperature near the film formation temperature and the band-shaped substrate receives heat from the plasma. A close temperature is sufficient, and preferably in the range of about 150 ° C to 400 ° C. In this temperature range, the thermal decomposition of the raw material gas is not promoted and the deposited film does not adhere to the surface of the plate heater 114, so that maintenance is not required and the operation rate of the apparatus does not decrease. In addition, since the plate heater 114 has a higher mechanical strength than a lamp heater using a quartz tube, the possibility of breakage is reduced and a decrease in the operation rate can be prevented.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, as an embodiment of the present invention, an apparatus for forming a photovoltaic element using a deposition film forming apparatus will be described with reference to FIGS. 1 to 7. However, the present invention is not limited to these embodiments. It is not limited. Example 1 A pin-type amorphous silicon photovoltaic element was fabricated on the surface of a strip-shaped substrate under the following conditions using a roll-to-roll type plasma CVD apparatus shown in FIG. Hereinafter, description will be made with reference to FIGS. As the belt-shaped substrate 100, a thin film of aluminum (thickness 0.1 μm) is formed on the belt-shaped substrate 100 as a back reflection layer by a roll-to-roll type sputtering film forming apparatus (not shown) in advance.
m) and a thin film of zinc oxide (ZnO) (thickness: 1.0 μm)
350 mm wide, 300 m long, and 0.1 mm thick.
2 mm SUS430 was used.

In this embodiment, as a means for preheating the belt-like substrate before entering the film-forming space, an output of 1 k
Lamp heater unit 113 with built-in 6 quartz tube lamp heaters of W (heating region: lamp heaters are arranged at equal intervals in substrate width direction 500 mm x transport direction 150 mm)
Is installed, and as a heating means for the belt-like substrate in the film forming space, the output shown in FIG.
One sheath heater having a length of 4 m and a length of 4 m was used, and a plate heater 114 (heating area: 500 mm in the substrate width direction × 900 mm in the conveyance direction) was sandwiched between two aluminum plates having a thickness of 5 mm. The heaters were installed such that the distance between the end of the heating area of the lamp heater unit and the beginning of the heating area of the plate heater in the transport direction was 50 mm apart. Also, two sets of fin-shaped reflectors in which five stainless steel plates having a thickness of 0.3 mm are stacked at an interval of 1 mm (size: 150 mm in substrate width direction × 9 in transport direction)
(00 mm) on the surface of the plate heater 113 that does not face the strip-shaped substrate, and at portions corresponding to both ends in the strip-shaped substrate width direction. For heater temperature control,
The lamp heater installed a thermocouple 111 at a position 5 mm away from the tube surface of the quartz tube, and the sheath heater measured the temperature by bringing the thermocouple 111 into contact with the tube surface of the sheath, and controlled the temperature by feeding back to the applied power. .

The temperature of the belt-like substrate is measured by bringing a sheath thermocouple into contact with the conveyed substrate at a constant pressure.
The temperature of each heater was controlled so that the center portion in the width direction of the belt-shaped substrate was at the desired preheating temperature and heating temperature. When the temperature distribution in the width direction of the band-shaped substrate in the film formation space was measured, the variation was within 5%, and it was found that heating was performed uniformly in the width direction. First, the belt-shaped substrate 100 was set to be sent out from the sending chamber 200, passed through three film forming chambers 201 to 203 connected by the gas gate 102, and wound up in the winding chamber 206.

Next, these chambers are evacuated to a pressure of 1 Torr by an exhaust means (not shown) through an exhaust adjusting valve 108 shown in FIG. 1 provided in each of the film forming chambers 201 to 203. Film forming gas introduction pipe 10
6 to each of the film deposition chambers 201 to 20 by flowing He gas at a flow rate of 100 sccm and controlling the exhaust adjustment valve 108.
3 was measured with the pressure gauge 115 shown in FIG.
orr. Further, the heaters 110, 113, 11
4 was heated to 300 ° C. and baked in this state for 5 hours to desorb the impurity gas. next,
The He gas flowing from the film forming gas introduction pipe 106 is stopped, and a raw material gas having a composition shown in Table 1 is supplied from a gas mixer (not shown) through the film forming gas introduction pipe 106 to each of the film forming chambers 201 to 203.
Introduced. Each gas gate has a gas introduction pipe 103 for separation.
And H ₂ gas was flowed at 1000 sccm each. The transport speed of the belt-shaped substrate 100 was 1000 mm / min. In addition, from a high-frequency oscillator (not shown), the
Power is applied to the high-frequency electrode 109 in 203 to generate a plasma discharge in the film forming space 105, and n,
An i, p-type amorphous silicon film was continuously formed. Table 1 shows manufacturing conditions for stable film formation in each film formation chamber. As a film forming step, film formation was continuously performed for about 5 hours, and a semiconductor film could be formed on 250 m of a 300-m long strip-shaped substrate. Thereafter, the semiconductor film was obtained 250 m
Is called an effective part.

The strip substrate on which the amorphous silicon film obtained by the above procedure is deposited is taken out of the winding chamber 204, and an ITO transparent conductive film (thickness 800 °) is formed by a sputtering type film forming apparatus (not shown). While the belt-shaped substrate 100 is being sent out by a cutting machine (not shown),
Samples were cut at every 0 mm to form a sample, and a current collector electrode was formed by screen-printing an Ag paste to produce a photovoltaic element shown in the schematic cross-sectional view of FIG. The characteristics of the formed photovoltaic element were evaluated by measuring the photoelectric conversion rate η when simulated sunlight having an AM value of 1.5 and an energy density of 100 mW / cm ² , and further averaging the photoelectric conversion efficiency of each sample. Was evaluated. Table 2 shows the evaluation results. Further, in order to examine the state of film deposition on the heater, film formation was performed on the same 20-millimeter band-shaped substrate having a total length of 300 m, and then the film-forming chambers 201 to 203 were opened to the atmosphere. The state of film adhesion to the plate heater 114 for heating 100 was observed.

(Comparative Example 1) In Comparative Example 1, as shown in FIG. 6, a lamp heater unit 113 incorporating 10 quartz tube lamp heaters with an output of 200 W as a heating means for heating the band-shaped substrate 100 in the film forming space 105 was used. (Heating area: lamp heaters are arranged at equal intervals in the substrate width direction 500 mm × transport direction 900 mm), and the same film formation as in Example 1 was performed. Other film forming conditions are the same as in Table 1. The temperature distribution in the width direction of the band-shaped substrate in the film formation space is
When measured by the same method as in Example 1, the variation was within 8%, indicating that the uniformity was inferior to Example 1. The evaluation method was the same as in Example 1, and the evaluation results are shown in Table 2.

[0024]

[Table 1]

[0025]

[Table 2] As shown in Table 2, the photoelectric conversion efficiency was improved in Example 1 as compared with Comparative Example 1. Also, as a result of observing the state of film deposition on the heating means after performing film formation for 20 lots of the strip-shaped substrate for each of Example 1 and Comparative Example 1, in Comparative Example 1, the raw material gas was thermally decomposed and the quartz tube was decomposed. Although a silicon film was deposited on the surface, no film was deposited in Example 1. For this reason, in Comparative Example 1, the film deposited on the quartz tube was peeled off and dropped,
Since the transmission of infrared rays was hindered, the lamp heater 300 was replaced, and thus costs were increased. In the first embodiment, such a situation did not occur, so that maintenance was not required.

[Embodiment 2] In Embodiment 2, as shown in FIG. 5, as a heating means for a strip-shaped substrate in a film forming space, a sheath heater having an output of 1 kW, a sheath diameter of 10 mm, a length of 2 m and a thickness of 5 mm was used. Plate heater 114 (heating area: substrate width direction 500) sandwiched between two aluminum plates
(mm × transport direction 450 mm) were installed in parallel in the transport direction, and the same film formation as in Example 1 was performed. The temperature of each plate heater 114 can be independently controlled using a thermocouple 111. The temperature of the strip-shaped substrate on the entrance side of the film formation space 105 is set to the heating temperature 1, and the temperature on the exit side is set to the heating temperature 2. Table 3 shows the film forming conditions at this time. The evaluation method is the same as in Example 1, and the evaluation results are shown in Table 4. Comparative Example 2 In Comparative Example 2, the same film formation as in Comparative Example 1 was performed again. The film forming conditions are the same as in Table 1. The evaluation method is the same as in Example 1, and the evaluation results are shown in Table 4.

[0027]

[Table 3]

[0028]

[Table 4] From the above experiment, the photoelectric conversion efficiency of Example 2 was increased,
By setting the heating temperature 2 lower than the heating temperature 1, it can be said that the substrate temperature of the strip-shaped substrate 100 at the time of film formation was further optimized. In addition, as a result of observing the state of film deposition on the heating means of the band-shaped substrate in the film formation space after performing film formation for 20 lots of the band-shaped substrate in Example 2, the plate heater 114 was used in Example 2. There was no film deposition on the surface. In Comparative Example 2, the lamp heater unit 113 was used, but a silicon film was deposited on the surface of the quartz tube 301, and as a result, a trouble occurred in which the quartz tube 301 was damaged during the formation of the thirteenth lot. For this reason, it was necessary to stop the apparatus, open the film forming chamber to the atmosphere, and perform maintenance, so that the operation rate of the apparatus was reduced.

[0029]

As described above, according to the present invention,
A substrate processing apparatus and a substrate processing method capable of raising a temperature in a short period of time without an obstacle such as breakage of a heating means, a high productivity at a low cost, and a processed substrate having good characteristics, and in particular, a deposition method. It is possible to realize an apparatus or a method for continuously forming a deposited film such as a photovoltaic element on the surface of a strip-shaped substrate by a continuous film forming apparatus and a continuous deposited film forming method, a plasma CVD method or a sputtering method. That is, according to the present invention, since the substrate can be heated by the preliminary heating means provided outside the vicinity of the processing space, the substrate heater can be heated without any trouble such as breakage of the lamp heater by the quartz tube in the preliminary heating means. Can be heated to a temperature close to the substrate temperature required for processing in a short time, the frequency of equipment maintenance is reduced, and the operation rate is improved. Can be realized.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a part of an example of a substrate processing apparatus of the present invention.

FIG. 2 is a schematic cross-sectional view illustrating an example of a substrate processing apparatus using a strip-shaped substrate.

FIG. 3 is a schematic side view and a schematic top view showing an example of a preheating means used in the present invention.

FIG. 4 is a schematic side view and a schematic top view showing an example of a main heating unit used in the present invention.

FIG. 5 is a schematic sectional view showing a part of an example of the substrate processing apparatus of the present invention.

FIG. 6 is a schematic sectional view showing a part of an example of a conventional substrate processing apparatus.

FIG. 7 is a schematic cross-sectional view illustrating an example of a layer configuration of a photovoltaic element.

[Explanation of symbols]

 100: Strip substrate 101: Film forming chamber 102: Gas gate 103: Separating gas introducing tube 104: Magnet roller 105: Film forming space 106: Film forming gas introducing tube 107: Exhaust tube 108: Exhaust adjusting valve 109: High frequency electrode 110: Wall heater 111: Thermocouple 112: Pressure gauge 113: Lamp heater unit 114: Plate heater 115: Reflector 200: Delivery chamber 201-203: Film formation chamber 204: Winding chamber 205: Delivery core 206: Gas gate 207: Insertion paper 208: Winding core 300: Lamp heater 301: Quartz tube 302: Heating wire 303: Reflector 304: Heater fixing jig 400: Sheath heater 401: Metal plate 402: Reflector 700: Substrate 701: Backside reflective layer 702: Transparent conductive film 703: n-type layer 704: i-type layer 70 : P-type layer 706: transparent conductive film 707: collector electrode

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Naoto Okada 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Naoshi Yoshizato 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Non-corporation (72) Inventor Hiroshi Shimoda 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor O ▲ saki ▼ Hiroyuki 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon (72) Inventor Masahiro Kanai 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.

Claims (21)

[Claims] A processing chamber, a processing space provided in the processing chamber, a mechanism for transporting a substrate in at least the processing chamber,
In a substrate processing apparatus having a mechanism for performing substrate processing in the processing space and a mechanism for heating the substrate, the mechanism for heating the substrate includes a mechanism for moving the substrate before the substrate is carried into the processing space. A preheating means comprising a lamp heater for heating the substrate and a main heating means comprising a plate heater or a sheath heater for heating a portion of the substrate carried into the processing space. 2. The substrate processing apparatus according to claim 1, wherein said preheating means is means for heating said substrate in said processing chamber. 3. The substrate processing apparatus according to claim 1, further comprising a reflection plate on a side of the main heating unit opposite to the substrate side. 4. The apparatus according to claim 1, wherein the reflection plate is provided in a region facing an end of the substrate in a direction perpendicular to a direction in which the substrate is transported, and is not provided in a region facing a center of the substrate. 4. The substrate processing apparatus according to 3. 5. The substrate processing apparatus according to claim 1, wherein said main heating means comprises a plurality of plate heaters. 6. A method according to claim 1, wherein the distance between the end of the area where the substrate is heated by the preheating means and the start of the area where the substrate is heated by the main heating means in the transport direction of the substrate is equal to the preheating. The substrate processing apparatus according to any one of claims 1 to 5, wherein a distance of a region where the substrate is heated by the means in a transport direction of the substrate is shorter than the distance. 7. The substrate processing apparatus according to claim 1, wherein the mechanism for performing the substrate processing includes a plasma generating mechanism. 8. The substrate processing apparatus according to claim 1, wherein the mechanism for performing the substrate processing is a mechanism for forming a deposited film. 9. The plasma processing system according to claim 1, wherein
2. A mechanism for forming a film by using the method described in claim 1.
7. The substrate processing apparatus according to any one of items 1 to 6. 10. The substrate processing apparatus according to claim 1, wherein the mechanism for performing the substrate processing is a mechanism for performing film formation by sputtering. 11. A processing chamber, a processing space provided in the processing chamber, a mechanism for transporting a substrate in at least the processing chamber, a mechanism for performing substrate processing in the processing space, and a mechanism for heating the substrate. Heating the substrate by a preliminary heating means including a lamp heater before the substrate is carried into the processing space, and the processing space of the substrate. A substrate processing method comprising at least a step of heating a portion carried into the inside by a main heating means including a plate heater or a sheath heater. 12. The substrate processing method according to claim 11, wherein said substrate is heated in said processing chamber by said preheating means. 13. The substrate processing method according to claim 11, wherein a reflection plate is provided on a side of the main heating means opposite to the substrate to heat the substrate. 14. The apparatus according to claim 13, wherein said reflector is provided in a region facing an end of the substrate in a direction perpendicular to a direction in which the substrate is transported, and is not provided in a region facing a center of the substrate.
4. The substrate processing method according to 1. 15. The substrate processing method according to claim 11, wherein a plurality of plate heaters are provided as said main heating means. 16. The method according to claim 16, wherein a distance in a transport direction of the substrate between an end of an area where the substrate is heated by the preheating means and a start end of an area where the substrate is heated by the main heating means is determined by the preheating. The substrate processing method according to claim 11, wherein a distance of a region in which the substrate is heated by the means in the transport direction of the substrate is shorter than a distance in a transport direction of the substrate. 17. The substrate processing method according to claim 11, wherein the substrate processing is processing involving plasma generation. 18. The substrate processing method according to claim 11, wherein said substrate processing includes forming a deposited film. 19. The substrate processing method according to claim 11, wherein said substrate processing includes film formation by plasma CVD. 20. The substrate processing method according to claim 11, wherein said substrate processing includes film formation by sputtering. 21. The substrate processing method according to claim 11, wherein a band-shaped substrate is used as the substrate, and the band-shaped substrate is transported in a longitudinal direction thereof.