JP3416553B2 - Method for forming deposited film, method for manufacturing semiconductor element substrate, and method for manufacturing photovoltaic element - Google Patents

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a deposited film forming method,
The present invention relates to a method for manufacturing a semiconductor element substrate and a method for manufacturing a photovoltaic element, and more particularly to a method for manufacturing a semiconductor element such as a photovoltaic element that does not have curl deformation by incorporating a curl deformation removing step.

[0002]

2. Description of the Related Art In recent years, various researches and developments have been conducted toward the practical use of solar power generation using a solar cell (photovoltaic device). In order to establish a solar cell as one that can meet the power demand, it is required that the solar cell used has sufficiently high photoelectric conversion efficiency, is highly reliable, and can be mass-produced.

Amorphous silicon (hereinafter "a-Si")
A solar cell is attracting attention because it can be produced at low cost and is highly producible, as compared with a solar cell manufactured using crystalline Si or the like. The reason is that a readily available gas such as silane is used as a source gas, and this is subjected to glow discharge decomposition to form a deposited film such as a semiconductor film on a relatively inexpensive strip substrate such as a metal sheet or a resin sheet. This is possible. Then, various proposals have been made regarding a production method and production apparatus for an a-Si solar cell.

FIG. 1 is an example of a schematic sectional view of a single type a-Si solar cell. In FIG. 1, 101 is a substrate,
Reference numerals 102 and 103 denote back surface reflection layers (102 denotes a metal layer, 10
3 is a transparent oxide layer) and 104 to 106 are semiconductor layers (10
4 is an n-type semiconductor layer, 105 is an i-type semiconductor layer, and 106 is p
(Type semiconductor layer), 107 is a transparent conductor layer, and 108 is a collector electrode. For convenience, 101 to 107 are referred to as solar cell slabs (hereinafter referred to as “slabs”).

In the production of an a-Si solar cell, a conductive strip substrate made of stainless steel or the like wound in a roll shape is preferably used as the substrate 101.
As the metal layers 102 and 103, silver, aluminum, copper or the like having a high reflectance is preferably used, and as the transparent oxide layer 103, a transparent oxide having an appropriate resistance such as zinc oxide or tin oxide is preferable. Used for. These are JP-A-6-
The film is formed by a roll-to-roll type continuous sputtering device disclosed in Japanese Patent No. 184745 and the like.

A roll-to-roll type continuous plasma CVD apparatus is disclosed in US Pat. No. 4,485,125 as an apparatus for producing a semiconductor layer.
In the apparatus, the n-type semiconductor layer 104 and the p-type semiconductor layer 106 are formed by the RF plasma CVD method,
The i-type semiconductor layer 105 is formed by the RF plasma CVD method or the microwave (MW) plasma CVD method disclosed in JP-A-3-30419. Since the microwave has a high frequency, the energy density can be increased as compared with the case where RF is used, and it is suitable for efficiently generating and maintaining plasma at a low pressure. And
Prevents the polymerization of active species, which causes deterioration of the characteristics of the deposited film, and not only provides a high quality deposited film,
It is said that generation of powder such as polysilane in plasma can be suppressed and the film forming speed can be dramatically improved.

The transparent conductor layer 107 is made of SnO ₂ , In ₂ having excellent characteristics of transparency to visible light and electric conductivity.
O ₃ and ITO (In ₂ O ₃ + SnO ₂ ) films are preferably used, and they are formed by a roll-to-roll type continuous sputtering apparatus.

The collector electrode 108 is cut, for example, from a roll state into a slab of a desired size after the transparent conductor layer 107 is deposited, and a wire with copper, silver or the like is passed through the solar cell module process line. It is formed by

[0009]

In order to mass-produce solar cells using the roll-to-roll method, it is sufficient to lengthen and widen the band-shaped substrate, and if cost reduction is aimed at, the substrate It is desirable to reduce the thickness of the.

However, when the substrate is made longer and wider, there is a problem that the substrate is thermally deformed and curled due to heating from a heater or plasma at the time of forming each deposited film, particularly the back surface reflection layer and the semiconductor layer. Further, when the thickness of the substrate is made thinner, there is a problem in that the film is subjected to the deposited film stress and is easily curled and deformed. Such a problem occurs not only in the solar cell but more or less when the deposited film is formed by the roll-to-roll method.

When the substrate undergoes curl deformation, scratches are generated in a post-process after the transparent conductor layer is deposited, specifically, in a solar cell module forming process such as a slab cutting process or a collecting electrode forming process by wire attachment. There is a possibility that problems such as a defective collector electrode or a collector electrode may occur and the yield and appearance of the solar cell may be significantly deteriorated. Such a problem may occur not only in the solar cell but also in manufacturing other elements such as a semiconductor element such as a sensor, a liquid crystal element (including a semiconductor element and the like).

An object of the present invention is to solve the above problems and to form a semiconductor device having an excellent appearance, particularly a photovoltaic device with a good yield.

[0013]

The present invention is a deposited film forming method for forming a deposited film on a belt-shaped substrate by a roll-to-roll method, wherein curl deformation of the belt-shaped substrate caused by application of deformation stress is prevented. A method for forming a deposited film, comprising the step of removing an undeposited surface of the strip-shaped substrate by applying an external stress.

Further, the present invention is a method for manufacturing a semiconductor device substrate, which comprises a step of depositing at least a semiconductor layer on a strip substrate by a roll-to-roll method, wherein the strip substrate is curled by applying a deformation stress. There is provided a method for manufacturing a semiconductor element substrate, comprising a step of removing the deformation by applying an external stress to a non-deposited surface of the strip-shaped substrate.

Furthermore, the present invention is a method for manufacturing a photovoltaic element, which comprises a step of depositing at least a semiconductor layer and a transparent conductor layer on a belt-shaped substrate by a roll-to-roll method, in which a deformation stress is applied. A method for manufacturing a photovoltaic element, comprising the step of removing the curl deformation of the strip-shaped substrate caused by the step of applying external stress to the non-deposited surface of the strip-shaped substrate.

Examples of the deformation stress include thermal deformation stress when forming a deposited film such as a semiconductor layer, a transparent conductor layer, and a back surface reflection layer, and internal stress of the deposited film.

A conductive substrate is preferable as the strip substrate.

Further, it is preferable that the external stress is a deformation stress that plastically deforms the belt-shaped substrate. The external stress is preferably applied using a curl straightening machine, and a cylindrical roller type curl straightening machine is preferably used as the curl straightening machine. The external stress is preferably applied after forming a deposited film such as a transparent conductor layer, a semiconductor layer, and a back surface reflection layer.

According to the present invention, the curl deformation generated on the belt-shaped substrate is removed by applying an external stress that causes plastic deformation on the non-film-forming surface, so that a slab cutting step or a wire-lined collecting step is performed. It is possible to solve problems such as scratches and current collector electrode failures in subsequent steps such as the current electrode forming step.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION First, a specific example in which a belt-shaped substrate is curled and deformed will be described. For example, when a back surface reflection layer, a semiconductor layer, and a transparent conductor layer are sequentially laminated on a conductive strip substrate by a roll-to-roll method to form a photovoltaic element, the deformation stress received by the conductive strip substrate is Is
Examples include thermal deformation stress due to a heater or plasma at the time of forming each deposited film, film stress of each deposited film, and external stress from the steering mechanism of the roll-to-roll film forming apparatus. Hereinafter, each stress will be described.

<Thermal deformation stress> Using a roll-to-roll type continuous plasma CVD apparatus, using a SUS4302D substrate having a width of 356 mm and a thickness of 0.15 mm, a tension of 70 kg is applied in the conveyance direction, and a conveyance speed of 635 mm / m.
The process of depositing the nip type semiconductor layer by in will be described as an example. FIG. 2 shows a schematic diagram of the device. In FIG. 2, 201 is a substrate delivery chamber, 202 is n
Type semiconductor layer forming RF chamber, 203 is i type semiconductor layer forming RF chamber, 204 is i type semiconductor layer forming MW chamber, 205 is i type semiconductor layer forming RF chamber, and 206 is p type semiconductor layer forming RF chamber Chamber,
207 is a substrate winding chamber, 208-213 are gas gates, 214-218 are lamp heaters, 219-
222 is a gas heater, 223 to 233 are gas introduction pipes,
234 to 237 are high frequency oscillators, 238 to 251 are transport rollers, 252 to 259 are vacuum gauges, 260 is a substrate delivery bobbin, 261 is a substrate winding bobbin, and 262 is a substrate.

When the substrate 262 is conveyed directly above the discharge space of each of the semiconductor layer forming chambers 202 to 206, it is heated by the lamp heaters 214 to 218 from the rear surface of the film formation surface, and the film formation surface is heated by plasma. It gets hot. Further, when the substrate heated in the discharge space exits the discharge space, it is cooled through the gas gates 209 to 213 and its temperature is lowered. Therefore, there is a temperature difference in the transfer direction of the substrate 262, and such heating and cooling is repeatedly performed in a plurality of discharge spaces.

In general, the high temperature portion has a wider substrate width than the low temperature portion due to thermal expansion. Here, the thermal expansion in the thickness direction can be ignored. Further, the thermal expansion amount in the carrying direction is small enough to be ignored as compared with the long carrying path. However, the amount of thermal expansion in the width direction is so large that it cannot be ignored, and this is the main cause of deformation.

FIG. 3 is a schematic conceptual view (perspective view) in which the high temperature portion and the low temperature portion of the substrate are continuous. In FIG. 3, reference numeral 301 is a substrate, 302 is a discharge box, 303 is a magnet roller as a conveyance roller, and 304 is a lamp heater.

When considering the difference in the expansion amount of the substrate depending on the location, it is possible to consider a model in which substrates having different widths are connected. Furthermore, since the tension is applied in the substrate transport direction, the apparent width of the substrate is unlikely to change. Therefore, a compressive force acts toward the center of the substrate in the high temperature portion so that the substrate width in the high temperature portion that has been thermally expanded matches the substrate width in the low temperature portion.

It is generally known that when a compressive force or a tensile force is applied to a thin plate, the thin plate is likely to be distorted in the direction perpendicular to its surface. Since this substrate is also very thin, 0.15 mm, the compressive force causes the substrate to be deformed. It deforms in the direction perpendicular to the plane.

FIG. 4 is a partial perspective view of the curled substrate. Substrate 301 is 356m wide at room temperature (25 ° C)
m, the transport direction is X, and the width direction is Y. Also, the broken line in the figure is the shape of the flat substrate at 25 ° C.

Table 1 shows the amount of thermal expansion in the width direction of the substrate at typical film forming temperatures and the calculated value of the strain generated at that time. The amount of strain Q in the table is 356 m for the thermally expanded substrate
It is the distance from the peak surface of the circular arc to the flat surface assuming the case where the circular arc is deformed when corrected to m.

[0029]

[Table 1]

<Deposited Film Stress> When a film is deposited on a thin substrate, curl deformation due to the deposited film stress occurs on the substrate.
In the present specification, a case where the substrate curls with the film inside is defined as a tensile stress in the film, and a case where the substrate curls with the film outside is defined as a compressive stress in the film. FIG. 5 shows a schematic view of an example of curl deformation due to the stress of the deposited film. In the figure, 501 is a substrate, 502 is a deposited film, FIG. 5A shows the case where a tensile stress exists, and FIG. 5B shows the case where a compressive stress exists.

When a tensile stress acts in the film, the substrate immediately below the film interface is in a compressed state, and conversely, when a compressive stress acts in the film, the substrate is in a pulled state. Becomes

Next, the stress of the deposited film will be specifically described by dividing it into thermal stress and internal stress.

(Thermal stress) Since the substrate and the deposited film have different coefficients of thermal expansion, thermal stress is generated in the film due to the temperature difference between the film formation and the room temperature. If the coefficient of thermal expansion of the film is larger than that of the substrate, the contribution of stress due to the difference in coefficient of thermal expansion increases. Furthermore, the thermal stress increases as the substrate temperature during film formation increases.

(Internal Stress) Even after the thermal stress is removed, the residual stress is the internal stress, and the internal stress greatly changes depending on the film forming means and the film forming conditions. Further, the internal stress is caused by the strain generated by the film formation itself.

Here, the internal stress on the substrate of the back surface reflection layer which is the first deposition layer in the present invention will be described. As described above, the back surface reflecting layers 102 to 103 shown in FIG. 1 include the metal layer 102 having a high reflectance and the transparent oxide layer 103 having an appropriate resistance, which are roll-to-roll type. The film is formed by a continuous sputtering apparatus of As a method of sputtering, DC magnetron sputtering, in which a DC voltage is applied to a metal or metal oxide target member and the target member is hit with Ar ions or the like to form sputtered particles on a substrate, is used.

In the film formation by sputtering, since Ar atoms and sputtered atoms having high energy fly onto the substrate and hit the substrate during film formation, it is considered that a sputtered film having internal stress is formed in the film. To be Also, when the sputtering pressure is lowered, the mean free path of the particles existing in the system becomes longer, and the particles reaching the substrate contain many Ar atoms and sputtered atoms with high energy, increasing the internal stress. To do. Furthermore, the internal stress increases as the film thickness increases.

As an example, a width of 356 mm and a thickness of 0.15 m
m as a back surface reflection layer on the SUS4302D substrate
Is 0.2 μm and ZnO is 1.2 μm.
The film was formed using a two roll type continuous DC magnetron sputtering device. After the film formation, the substrate on which the back reflection layer was deposited was visually observed at room temperature. As a result, the substrate was curled outward as shown in FIG. 5 (b), and compressive stress was present in the film as internal stress. I found out.

<External Stress> All roll-to-roll type film forming apparatuses for forming the back reflection layer, the semiconductor layer, and the transparent conductor layer each have a mechanism for aligning the end faces of the substrate during winding. The steering mechanism shown in FIG. 6 is incorporated. In FIG. 6, 601 is a steering roller, 602 is a rotating mechanism, 603 is a transport speed detecting encoder, 604 is a bearing, 605 is a substrate lateral deviation detecting mechanism, and 606 is a substrate. A difference in tension is generated in the width direction of the substrate during the operation of the steering mechanism and during the suspension of the operation, and the repeated operation and suspension of the operation affect the deformation of the substrate. Furthermore, since the substrate passes through the steering roller with the deposited film surface outside, it is wound on the substrate winding bobbin.
An external force acts on the substrate to curl the deposited film outside.

The present invention is based on the above-mentioned thermal deformation stress,
When the strip-shaped substrate undergoes curl deformation due to deformation stress such as deposited film stress and external stress, the curl deformation is removed by applying external stress that causes plastic deformation to the non-film-forming surface of the strip-shaped substrate. It is a method for forming a deposited film, which prevents scratches and defective collector electrodes in a process and forms a photovoltaic element having a good appearance with a good yield.

In the present invention, a curl straightener, particularly a cylindrical roller type curl straightener, is preferably used as the curl deformation removing means. FIG. 7 shows a schematic sectional view of an example of a cylindrical roller type curl straightener. 70 in the figure
Reference numeral 1 is a cylindrical roller, 702 is a mount, 703 is a roller facing distance adjusting handle, and 704 is a substrate. The cylindrical rollers 701 are made to face each other by 10 in the vertical direction, and the facing distance can be adjusted by a roller facing distance adjusting handle 703. Also, the length of the cylindrical roller must be at least longer than the width of the substrate.

When the substrate 704 on which the deposited layer has been deposited and curled and deformed is passed through the straightener of FIG. 7, 20 cylindrical rollers 701 and the self-weight of the substrate 704 cause plastic deformation from each roller on the non-film-forming surface of the substrate 704. External stress that causes deformation is applied, and curl deformation is removed.

In manufacturing the above-mentioned photovoltaic element, it is preferable that the curl deformation removing step is performed after depositing any one of the back surface reflection layer, the semiconductor layer, and the transparent conductor layer.

As an example of the photovoltaic element formed by the forming method of the present invention, on a stainless steel strip substrate,
Aluminum having a high reflectance is deposited on the metal layer as the back surface reflection layer, and zinc oxide having appropriate resistance and transparency is deposited on the back surface reflection layer. On the back surface reflection layer, the i-type semiconductor layers are a-Si and a, respectively. One obtained by depositing a triple semiconductor layer having three pin junctions made of —SiGe and a-SiGe, and further depositing ITO having appropriate resistance and transparency on the semiconductor layer is mentioned.

[0044]

EXAMPLES Example 1 As a first example of the present invention, a triple type a-Si solar cell slab having the structure shown in FIG. 8 was produced, and then the slab was cut into a desired size to produce a solar cell. A thin film solar cell was produced by wire-connecting the collector electrode with a module process line. 80 in FIG.
Reference numeral 1 is a substrate, 802 to 803 are back surface reflection layers, and 804 to 81.
2 is a semiconductor layer, and 813 is a transparent conductor layer.

(Step 1) A stainless steel strip substrate (width 356 mm, thickness 0.15 mm, length 750 m) 801 that has been thoroughly degreased and washed with oakite and pure water is placed in a roll-to-roll type DC magnetron sputtering device (not shown). Then, Al is deposited to 0.2 μm and ZnO is then deposited to 1.2 μm.
Then, backside reflecting layers 802 and 803 were formed.

(Step 2) The substrate is taken out and put into a triple type apparatus of the roll-to-roll type plasma CVD apparatus shown in FIG. 2, and a-S is placed on the back surface reflection layer 803.
n-type layer 804 made of i, i-type layer 805 made of a-SiGe, p-type layer 806 made of μc-Si (microcrystalline silicon) (above bottom layer), n-type layer 80 made of a-Si
7, an i-type layer 808 made of a-SiGe, a p-type layer 809 made of μc-Si (above middle layer), and an n-type layer 810 made of a-Si. i-type layer 811 made of a-Si, μc
A p-type layer 812 (above top layer) made of —Si was sequentially laminated. The bottom layer and the middle layer i-type layers 805, 8
08 was formed by the MW plasma CVD method, and the other layers were formed by the RF plasma CVD method. That is, the semiconductor layer was a triple cell. The i-type layer 805 has a film thickness of 900Å, the i-type layer 808 has a film thickness of 850Å, and the i-type layer 811 has a film thickness of 950Å.
Å

(Step 3) The substrate was taken out and put in a roll-to-roll type DC magnetron sputtering apparatus (not shown), and ITO was deposited on the semiconductor layer by 850 Å to form a transparent conductor layer 813.

As described above, the i-type semiconductor layers are a-Si,
Fabrication of a triple solar cell slab having three pin junctions of a-SiGe and a-SiGe was completed.

(Step 4) The substrate was taken out and passed through the cylindrical roller type curl straightener shown in FIG. 7 to remove the curl deformation. Diameter 38 mm, length 707 as a cylindrical roller
mm roller is used, and the roller facing distance is 130 m
m.

(Step 5) As shown in FIG. 9, following the step 4, the slab cutting machine 904 cuts the slab 356 m.
It was cut into a size of m × 240 mm (240 mm in the substrate transport direction while keeping the width of 356 mm). In the figure, 901 is a bobbin, 902 is a substrate, 903 is a cylindrical roller similar to 701 shown in FIG. 7, 904 is a slab cutting machine, and 905 is a cut slab.

After that, the cut slab was arbitrarily extracted, and the curl amount t was measured by raising the film-forming surface on a horizontal table as shown in FIG.

(Step 6) The cut slab 905 is flown into a solar cell module line (not shown) to perform module processing such as etching electric field processing, and as shown in FIG. Electrode 1001
42 wires were attached at a wire pitch of 5.6 mm, and a positive electrode tab 1102 and a negative electrode tab 1103 were attached.

With respect to the obtained thin film solar cell, the appearance of the current collecting electrode 1101 was visually inspected, and the solar cell characteristics were measured using a pseudo solar light source with a light amount of 100 mW / cm ^{2 in} the AM1.5 sunlight spectrum. The photoelectric conversion efficiency was calculated.

As a result, the curl amount of the slab was 0 mm, there were no defective collecting electrodes, and the photoelectric conversion efficiency was 9.5%. Therefore, the thin-film solar cell of this example had good characteristics. all right.

[Embodiment 2] In Embodiment 1 (Step 4)
The thin film solar cell was manufactured in the same manner as in Example 1 except that the curl deformation removing step of (1) was performed after the semiconductor layers 804 to 812 were deposited, the transparent conductor layer 813 was then deposited, and the slab cutting was performed. The curl amount measurement was performed twice immediately after the curl straightening and after the slab cutting.

As a result, the curl amount of the slab was 0 mm immediately after the curl straightening and 1.5 mm after the slab cutting, and it was found that the curl deformation occurred when the transparent conductor layer was deposited. Further, in the obtained thin film solar cell, there is no collector electrode defect, and the photoelectric conversion efficiency is 9.5%, which is the same result as in Example 1. Therefore, the thin film solar cell of this Example has good characteristics. I understood it.

[Embodiment 3] In Embodiment 1 (Step 4)
The thin film solar cell is manufactured in the same manner as in Example 1 except that the curl deformation removing step is performed after the back surface reflection layers 802 and 803 are deposited, the semiconductor layers 804 to 812 and the transparent conductor layer 813 are then deposited, and slab cutting is performed. did. The curl amount measurement was performed twice immediately after the curl straightening and after the slab cutting.

As a result, the curl amount of the slab was 0 mm immediately after the curl straightening and 4 mm after the slab cutting, and it was found that the curl deformation occurred when the semiconductor layers 804 to 812 and the transparent conductor layer 813 were deposited. Further, in the obtained thin film solar cell, there is no collector electrode defect, and the photoelectric conversion efficiency is 9.5%, which is the same result as in Example 1. Therefore, the thin film solar cell of this Example has good characteristics. I understood it.

Comparative Example A thin film solar cell was produced in the same manner as in Example 1 except that the curl deformation removing step of (Step 4) in Example 1 was not performed.

As a result, the curl amount of the slab reached 10 mm, and many defective collector electrodes were observed depending on the slab.
The photoelectric conversion efficiency was 9.5%, which was the same as that of Example 1, when a device having no collector electrode defect was selected and measured.

Table 2 summarizes the above results.

[0062]

[Table 2]

[0063]

As described above, according to the method for forming a deposited film of the present invention, particularly when applied to the production of a photovoltaic element, curl deformation can be removed without reducing the photoelectric conversion efficiency. This makes it possible to prevent scratches and electrode defects due to curl deformation, and improve the appearance and manufacturing yield of photovoltaic elements and the like.

[Brief description of drawings]

FIG. 1 is a cross-sectional view schematically showing an example of the configuration of a single type a-Si solar cell.

FIG. 2 Roll-to-roll continuous plasma CV
It is a schematic outline sectional view showing an example of D device.

FIG. 3 is a schematic conceptual view (perspective view) showing a substrate in which a high temperature portion and a low temperature portion are continuous, for explaining deformation of the substrate due to thermal stress.

FIG. 4 is a partial perspective view of a substrate that is curled.

FIG. 5 is a schematic view showing an example of curl deformation due to deposited film stress according to the present invention.

FIG. 6 is a schematic perspective view showing a steering mechanism in a roll-to-roll type film forming apparatus.

FIG. 7 is a schematic sectional view showing an example of a cylindrical roller type curl straightening machine used in the present invention.

FIG. 8 is a triple type a-Si produced in the example of the present invention.
It is sectional drawing which shows a solar cell slab typically.

FIG. 9 is a schematic cross-sectional view showing a curl deformation removing step and a slab cutting step in an example of the present invention.

FIG. 10 is a schematic perspective view showing a method for measuring a curl deformation amount.

FIG. 11 is a schematic plan view of a solar cell manufactured in an example of the present invention as viewed from the light incident side.

[Explanation of symbols]

101 substrate 102 metal layer (back surface reflection layer) 103 Transparent Oxide Layer (Back Reflection Layer) 104 n-type semiconductor layer 105 i-type semiconductor layer 106 p-type semiconductor layer 107 transparent conductor layer 108 collector electrode 201 Substrate delivery chamber 202 RF chamber for forming n-type semiconductor layer 203 RF chamber for forming i-type semiconductor layer 204 MW chamber for forming i-type semiconductor layer 205 RF chamber for forming i-type semiconductor layer 206 RF chamber for forming p-type semiconductor layer 207 Substrate winding chamber 208-213 gas gate 214-218 Lamp heater 219-222 Gas heater 223-233 gas introduction pipe 234-237 high frequency oscillator 238-251 Transport roller 252 to 259 vacuum gauge 260 PCB delivery bobbin 261 Board winding bobbin 262 substrate 301 substrate 302 discharge box 303 magnet roller 304 lamp heater 501 substrate 502 deposited film 601 Steering roller 602 rotation mechanism 603 Conveyor speed detection encoder 604 bearing 605 Substrate lateral deviation detection mechanism 606 substrate 701 Cylindrical roller 702 stand 703 Roller facing distance adjustment handle 704 substrate 801 substrate 802 Al layer (back surface reflection layer) 803 ZnO layer (back surface reflection layer) 804 a-Si n-type layer 805 a-SiGe i-type layer P-type layer made of 806 μc-Si 807 a-Si n-type layer 808 a-SiGe i-type layer P-type layer made of 809 μc-Si 810 a-Si n-type layer 811 a-Si i-type layer P-type layer made of 812 μc-Si 813 Transparent conductor layer 901 Bobbin 902 substrate 903 Cylindrical roller 904 Slab cutting machine 905 Slab 1101 collector electrode 1102 Positive electrode tab 1103 Negative tab 1104 Double-sided tape

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Claims (32)

(57) [Claims] 1. A deposited film forming method for forming a deposited film on a belt-shaped substrate by a roll-to-roll method, wherein curl deformation of the belt-shaped substrate caused by application of a deformation stress is caused on a non-deposited surface of the belt-shaped substrate. A method for forming a deposited film, which comprises the step of removing by applying external stress to the film. 2. The deposited film forming method according to claim 1, wherein the strip-shaped substrate is a conductive substrate. 3. The deposited film forming method according to claim 1, wherein the external stress is a deformation stress that plastically deforms the belt-shaped substrate. 4. The deposited film forming method according to claim 1, wherein the deformation stress is a thermal deformation stress when a deposited film is formed on the strip substrate. 5. The deformation stress is film stress of a deposited film formed on the belt-shaped substrate.
The method for forming a deposited film as described above. 6. The deposited film forming method according to claim 1, wherein the external stress is applied by using a curl straightening machine. 7. The cylindrical roller type curl straightening machine is used as the curl straightening machine.
The method for forming a deposited film as described above. 8. The deposited film forming method according to claim 1, wherein at least a semiconductor layer is deposited on the belt-shaped substrate. 9. The deposited film forming method according to claim 8, wherein the external stress is applied after depositing the semiconductor layer. 10. The deposited film forming method according to claim 1, wherein at least a transparent conductor layer is formed on the belt-shaped substrate. 11. The deposited film forming method according to claim 10, wherein the external stress is applied after depositing the transparent conductor layer. 12. A method of manufacturing a semiconductor element substrate, comprising a step of depositing at least a semiconductor layer on a strip-shaped substrate by a roll-to-roll method, wherein curling deformation of the strip-shaped substrate caused by application of deformation stress is performed. A method of manufacturing a semiconductor element substrate, comprising a step of removing an undeposited surface of the strip substrate by applying an external stress. 13. The method of manufacturing a semiconductor element substrate according to claim 12, wherein the belt-shaped substrate is a conductive substrate. 14. The external stress is a deformation stress that plastically deforms the belt-shaped substrate.
Or the method for manufacturing a semiconductor element substrate as described in 13 above. 15. The deformation stress is a thermal deformation stress when a semiconductor layer is formed on the strip substrate.
A method for manufacturing a semiconductor device substrate as described above. 16. The deformation stress is film stress of a semiconductor layer formed on the belt-shaped substrate.
21. A method of manufacturing a semiconductor element substrate according to 2-15. 17. The method of manufacturing a semiconductor device substrate according to claim 12, wherein the external stress is applied by using a curl straightening machine. 18. The method of manufacturing a semiconductor element substrate according to claim 17, wherein a cylindrical roller type curl straightening machine is used as the curl straightening machine. 19. The method of manufacturing a semiconductor device substrate according to claim 12, wherein the external stress is applied after depositing the semiconductor layer. 20. The method of manufacturing a semiconductor element substrate according to claim 12, wherein at least a transparent conductor layer is formed on the strip substrate. 21. The method of manufacturing a semiconductor device substrate according to claim 20, wherein the external stress is applied after depositing the transparent conductor layer. 22. A method of manufacturing a photovoltaic element, comprising a step of depositing at least a semiconductor layer and a transparent conductor layer on a belt-shaped substrate by a roll-to-roll method, wherein the belt-shaped substrate is formed by applying a deformation stress. A method for manufacturing a photovoltaic element, comprising a step of removing curl deformation of a substrate by applying external stress to a non-deposited surface of the strip-shaped substrate. 23. The method of manufacturing a photovoltaic element according to claim 22, wherein the strip substrate is a conductive substrate. 24. The external stress is a deformation stress that plastically deforms the belt-shaped substrate.
23. The method for manufacturing a photovoltaic element according to 23. 25. The method of manufacturing a photovoltaic element according to claim 22, wherein the deformation stress is a thermal deformation stress when a semiconductor layer and / or a transparent conductor layer is formed on the strip substrate. 26. The method for manufacturing a photovoltaic element according to claim 22, wherein the deformation stress is a film stress of a semiconductor layer and / or a transparent conductor layer formed on the strip substrate. 27. The method of manufacturing a photovoltaic element according to claim 22, wherein the external stress is applied by using a curl straightening machine. 28. The method of manufacturing a photovoltaic element according to claim 27, wherein a cylindrical roller type curl straightening machine is used as the curl straightening machine. 29. The method of manufacturing a photovoltaic element according to claim 22, wherein the external stress is applied after depositing the semiconductor layer. 30. The method of manufacturing a photovoltaic element according to claim 22, wherein the external stress is applied after depositing the transparent conductor layer. 31. The method of manufacturing a photovoltaic element according to claim 22, wherein at least a back reflection layer is formed on the strip substrate. 32. The method of manufacturing a photovoltaic element according to claim 31, wherein the external stress is applied after depositing the back surface reflection layer.