JP2000243797A - Semiconductor wafer, and cutting method thereof, and semiconductor wafer assembly and cutting method thereof - Google Patents

Semiconductor wafer, and cutting method thereof, and semiconductor wafer assembly and cutting method thereof

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Publication number
JP2000243797A
JP2000243797A JP3942099A JP3942099A JP2000243797A JP 2000243797 A JP2000243797 A JP 2000243797A JP 3942099 A JP3942099 A JP 3942099A JP 3942099 A JP3942099 A JP 3942099A JP 2000243797 A JP2000243797 A JP 2000243797A
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Japan
Prior art keywords
semiconductor wafer
material layer
magnetic material
semiconductor
laminated body
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JP3942099A
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Japanese (ja)
Inventor
Hiroyuki Sakida
洋之 崎田
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Sanken Electric Co Ltd
サンケン電気株式会社
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Priority to JP3942099A priority Critical patent/JP2000243797A/en
Publication of JP2000243797A publication Critical patent/JP2000243797A/en
Application status is Pending legal-status Critical

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Abstract

PROBLEM TO BE SOLVED: To automatically discriminate the quality of semiconductor chips based on whether or not a magnetic material layer is present on the side of the semiconductor chip, when the semiconductor chips are cut off by a method wherein a magnetic material layer is provided in the side of a semiconductor wafer with a primary surface, where electronic elements or patterns are physically and chemically formed. SOLUTION: A magnetic material layer 4, composed of magnetic powder and binder which binds magnetic powder together, is previously applied on the side of a semiconductor wafer laminate. Lastly, when a magnet is made to approach separated semiconductor chip laminates 8, the semiconductor chip laminate 8 with the magnetic material layer 4 formed on its side is attracted by the magnet. The semiconductor chip laminate 8 having no magnetic material layer 4 formed on its side is not attracted to the magnet. As a result, the semiconductor chip laminates 8 which are possessed of arc-shaped sides, defective in shape, and not suitable for use in the manufacture of products can be easily and surely sorted out.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、半導体ウエハ技術、特に半導体ウエハ又は半導体ウエハ組立体の切断の際に発生する形状不良の製品から容易に分離できる半導体ウエハ及びその切断法並びに半導体ウエハ組立体及びその切断法に属する。 The present invention relates to a semiconductor wafer technology, particularly semiconductor wafers and a cutting method and a semiconductor wafer assembly can be easily separated from the shape defect of the products generated during the cutting of the semiconductor wafer or a semiconductor wafer assembly and belong to the cutting method.

【0002】 [0002]

【従来の技術】半導体チップ積層体を製造する際に、薄板状に形成された半導体ウエハの主面に種々の電子素子又は電子回路を含む同一の複数の電子素子又はパターンが物理化学的に形成され、その後、半導体ウエハを切断して個々の電子パターンに分離される。 When manufacturing of the Prior Art Semiconductor chips stack, a plurality of identical electronic elements or patterns physicochemical form including various electronic devices or electronic circuits on the main surface of the semiconductor wafer formed in a thin plate It is, then, by cutting the semiconductor wafer is separated into individual electronic pattern. 例えば、高圧ダイオードを製造するとき、特開平10−217094号公報に示されるように、主面上に種々の電子素子及びパターンを形成した薄板状の半導体ウエハは、周知のワイヤソー又はダイシングブレードを使用して、賽の目状の半導体チップに切断分離される。 For example, when producing high-voltage diode, as shown in JP-A-10-217094, various electronic devices thin plate of the semiconductor wafer formed with and pattern on the main surface, using known wire saw or a dicing blade and, it is cut and separated into dice-like semiconductor chips.

【0003】 [0003]

【発明が解決しようとする課題】平面円形状の半導体ウエハを平面四角形状のチップに切断分割すると、半導体ウエハの周辺側の半導体チップは、平面四角形状とならず一部が欠けた形状となり、このような半導体チップは、形状不良の切屑となり製品に使用できない。 Disconnecting divides THE INVENTION It is an object Solved] plane circular semiconductor wafer in a planar rectangular shape of the chip, the peripheral side of the semiconductor chip of the semiconductor wafer, a shape with the cut portion does not become flat rectangular shape, such semiconductor chip can not be used for products become defective shape of the chip. 従来では、形状不良の半導体チップを目視で判別し除去するため、量産工程を導入できず生産性の点で問題があった。 Conventionally, in order to remove determined shape defect of the semiconductor chips visually, there is a problem in terms of productivity can not be introduced mass production process.

【0004】本発明は、形状不良の半導体チップを自動的に選別できる半導体ウエハ及びその切断法を提供することを目的とする。 [0004] The present invention aims at providing a semiconductor wafer and a cutting method can sort the shape defect of the semiconductor chip automatically. また、本発明は形状不良の半導体チップ積層体を自動的に選別できる半導体ウエハ積層体及びその切断法を提供することを目的とする。 Further, the present invention aims at providing a semiconductor wafer stack and a cutting method capable of automatically selecting a semiconductor chip laminated body of the shape defect.

【0005】 [0005]

【課題を解決するための手段】本発明による半導体ウエハは、電子素子又はパターンが物理化学的に形成された少なくとも1つの主面を有する半導体ウエハの側面に磁性物質層(4)が設けられる。 Semiconductor wafer according to the present invention, in order to solve the above-mentioned object, an electronic device or pattern is a magnetic material layer on the side surface of the semiconductor wafer having at least one major surface is physicochemically formation (4) is provided. 半導体ウエハの側面に磁性物質層(4)を設けるので、半導体ウエハを個々の半導体チップに切断したとき、不良形状の半導体チップの側面に形成された磁性物質層(4)の有無により製品の形状良否を自動的に選別することができる。 Since the side surface of the semiconductor wafer provided a magnetic material layer (4), obtained by cutting the semiconductor wafer into individual semiconductor chips, the shape whether the product of the magnetic material layer formed on the side surface of the semiconductor chip defective shape (4) it can be selected acceptability automatically.

【0006】本発明の実施の形態では、磁性物質層(4) [0006] In the embodiment of the present invention, a magnetic material layer (4)
は、磁性粉体と、磁性粉体を連結する結合剤である。 Is a binding agent for coupling the magnetic powder, the magnetic powder. 半導体ウエハ(2)は、複数の半導体ウエハ(2)を積層した半導体ウエハ積層体(1)を構成し、隣合う複数の半導体ウエハ(2)は半田層(3)により相互に固着される。 The semiconductor wafer (2) constitutes a semiconductor wafer laminated body formed by laminating a plurality of semiconductor wafers (2) to (1), adjacent the plurality of semiconductor wafers (2) is secured to one another by a solder layer (3).

【0007】本発明による半導体ウエハ切断法は、半導体ウエハ(2)の側面に磁性物質層(4)を形成する工程と、 [0007] semiconductor wafer cutting method according to the present invention includes the steps of forming a magnetic material layer on the side surface of the semiconductor wafer (2) (4),
直径方向面又は直径方向面と平行な面に沿って半導体ウエハ(2)を切断して個々の半導体チップを形成する工程と、磁性物質層(4)を検出して、磁性物質層(4)を有する形状不良の半導体チップを選別する工程とを含む。 Forming individual semiconductor chips by cutting the semiconductor wafer (2) along a plane parallel to the diametral plane or diameter direction side, and detects a magnetic material layer (4), the magnetic material layer (4) selecting a shape defect of the semiconductor chip with and a step.

【0008】また、本発明による半導体ウエハ積層体切断法は、積層した複数の半導体ウエハ(2)の側面に磁性物質層(4)を形成した半導体ウエハ積層体(1)を用意する工程と、直径方向面又は直径方向面と平行な面に沿って半導体ウエハ積層体(1)を切断して半導体チップ積層体 Further, the semiconductor wafer laminated body cutting method according to the present invention includes the steps of preparing a semiconductor wafer laminated body formed magnetic material layer (4) on the side surface of the plurality of semiconductor wafers stacked (2) (1), cut semiconductor wafer laminate along a plane parallel to the diametral plane or diameter direction surface (1) a semiconductor chip laminated body
(8)を形成する工程と、磁性物質層(4)を検出して、磁性物質層(4)を有する形状不良の半導体チップ積層体(8)を選別する工程とを含む。 And forming a (8), and a step of selecting to detect magnetic material layer (4), the magnetic material layer (4) semiconductor chip laminated body of the shape defect with the (8).

【0009】本発明の実施の形態では、半導体チップ又は半導体チップ積層体(8)に磁石(10)を近接させて、磁性物質層(4)を有する形状不良の半導体チップ又は半導体チップ積層体(8)を磁石(10)に吸着させて選別するか又は磁気感応素子により磁性物質層(4)を有する形状不良の半導体チップ又は半導体チップ積層体(8)を選別することができる。 [0009] In the embodiment of the present invention, it is brought close to the magnet (10) on the semiconductor chip or a semiconductor chip laminated body (8), the magnetic material layer (4) shape defect of the semiconductor chip or a semiconductor chip laminated body with a ( 8) can be sorted magnet (magnetic material layer (4) shape defect having a semiconductor chip or a semiconductor chip laminated body by or magnetically sensitive elements sorted by adsorbing to 10) (8). また、本発明による半導体ウエハ組立体切断法では、直径方向面又は直径方向面と平行な面に沿って切断した半導体ウエハ積層体(1)の切断部(6)に接着用樹脂(7)を充填して、板状の半導体ウエハ積層体(1) Further, in the semiconductor wafer assembly cutting method according to the present invention, the adhesive resin (7) to the cutting section (6) of the semiconductor wafer laminated body taken along the plane parallel to the diametral plane or diameter direction side (1) filled, plate-like semiconductor wafer laminate (1)
間を接着用樹脂(7)で固着する工程と、前記の面と直角な面に沿って更に半導体ウエハ積層体(1)を切断する工程と、エッチング液中に半導体ウエハ積層体(1)を浸漬して、接着用樹脂(7)を溶解し、半導体チップ積層体(8) A step of fixing by adhesive resin between (7), and cutting the further semiconductor wafer laminate along the plane perpendicular plane (1), the semiconductor wafer laminated body in an etching solution (1) immersed in, to dissolve the adhesive resin (7), the semiconductor chip laminated body (8)
を形成する工程とを含んでもよい。 It may include a step of forming a.

【0010】 [0010]

【発明の実施の形態】本発明による半導体ウエハ及びその切断法並びに半導体ウエハ組立体及びその切断法の実施の形態を図1〜図7について以下説明する。 About 1 to 7 an embodiment of a semiconductor wafer and a cutting method and a semiconductor wafer assembly and a cutting method according to the embodiment of the present invention will be described below.

【0011】図1に示すように、複数枚の円盤状の半導体ウエハ(2)を半田層(3)を介して固着し積層した半導体ウエハ積層体(1)を用意する。 [0011] As shown in FIG. 1, the plurality of disk-shaped solder layer of the semiconductor wafer (2) (3) fixed layered with the semiconductor wafer laminate (1) is prepared. 各半導体ウエハ積層体(1) Each semiconductor wafer laminate (1)
の一方の主面(1a)と他方の主面(1b)には、図示しないリード部材を固着するための接着剤層(1c)が形成される。 On one main surface (1a) and the other main surface of the (1b), the adhesive layer for fixing the lead member (not shown) (1c) is formed.
各半導体ウエハ(2)は半導体チップ(1)を多数個取りできる大きさである。 Each semiconductor wafer (2) is sized to a semiconductor chip (1) it can be a multi-piece. 薄板状の各半導体ウエハ(2)の主面には種々の電子素子及び配線パターンが形成されている。 The main surface of the thin plate of each semiconductor wafer (2) various electronic devices and wiring patterns are formed.

【0012】次に、図2に示すように、磁性粉体と、磁性粉体を連結する結合剤から成る磁性物質層(4)を半導体ウエハ積層体(1)の側面に塗布する。 [0012] Next, as shown in FIG. 2, the magnetic powder is coated magnetic material layer made of a binder that connects the magnetic powder (4) on the side surface of the semiconductor wafer laminate (1). 磁性粉体は例えば鉄粉であり、結合剤はアクリル系接着剤等の熱可塑性接着剤、エポキシ樹脂等の熱硬化性接着剤、エチレン酢酸ビニルコポリマー、ポリアミド、ポリエステル等のホットメルト接着剤を使用することができる。 Magnetic powder is iron powder such as binding agents are used thermoplastic adhesive such as acrylic adhesive, a thermosetting adhesive such as an epoxy resin, ethylene-vinyl acetate, polyamides, hot melt adhesive such as a polyester can do. 各半導体ウエハ(2)と半田層(3)の外周面全体を被覆する磁性物質層 Magnetic material layer which covers the entire outer peripheral surface of each semiconductor wafer (2) and a solder layer (3)
(4)は、半導体ウエハ積層体(1)の両主面(1a)(1b)には塗布されない。 (4) is not applied to both main surfaces of the semiconductor wafer laminate (1) (1a) (1b). 磁性物質層(4)は、切断された半導体ウエハ積層体(1)が、近接する磁石(10)に吸着できる程度の磁界を生じる磁束密度を生ずる。 Magnetic material layer (4) is cut semiconductor wafer laminate (1) is caused magnetic flux density resulting in a magnetic field enough to adsorb to the magnet (10) adjacent.

【0013】図2に示すように、磁性物質層(4)の形成された半導体ウエハ積層体(1)は、金属製の支持板(5)に接着剤層(1c)を介して固着される。 [0013] As shown in FIG. 2, the magnetic material layer (4) semiconductor wafer laminate formed of (1) of which is secured via an adhesive layer (1c) on the metal support plate (5) . 半導体ウエハ積層体 Semiconductor wafer laminate
(1)を支持板(5)上に固着する工程は、半導体ウエハ積層体(1)に磁性物質層(4)を形成した後でも、磁性物質層 (1) a step of fixing on the support plate (5), even after the formation of the magnetic material layer (4) on a semiconductor wafer stack (1), the magnetic material layer
(4)を形成する前でも良い。 (4) may be prior to the formation of the.

【0014】次に、周知のワイヤソーを用意して、半導体ウエハ積層体(1)の主面(1a)(1b)、即ち半導体ウエハ積層体(1)の最も上側に配置された半導体ウエハ(2)に対して直径方向面又は直径方向面と平行な面に沿って(X [0014] Next, to prepare the known wire saw, the main surface of the semiconductor wafer laminate (1) (1a) (1b), that is, the semiconductor wafer laminate (1) arranged closest to the upper semiconductor wafers (2 ) along a plane parallel to the diametral plane or diameter direction side with respect to (X
方向)にワイヤを往復操作して、図3に示すように、各半導体ウエハ(2)及び半田層(3)から成る半導体ウエハ積層体(1)を板状に切断分離する。 Back and forth operation of the wire in the direction), as shown in FIG. 3, is cut and separated the semiconductor wafer (2) and a solder layer (3) consisting of a semiconductor wafer laminate (1) in a plate shape. 接着剤層(1c)及び半田層(3)を介して支持板(5)に固着される板状の半導体ウエハ積層体(1)は、相互に分離しない。 Adhesive layer (1c) and a solder layer (3) via a supporting plate (5) fixed to the plate-like semiconductor wafer laminate (1) it is not separated from each other. 半導体ウエハ積層体(1)の最も上側に配置された半導体ウエハ(2)の主面に接着剤層(1c)を形成した状態でワイヤソーを行う場合は、ワイヤを接着剤層(1c)に当接させて切断を行う。 When performing wire saw most state of forming an adhesive layer (1c) on the main surface of the upper placement semiconductor wafer (2) of the semiconductor wafer laminate (1), those wires to the adhesive layer (1c) to contact perform the cut.

【0015】その後、板状の半導体ウエハ積層体(1)間の切断部(6)に接着用樹脂(7)を充填して、板状の半導体ウエハ積層体(1)間を接着用樹脂(7)で固着する。 [0015] Then, by filling the adhesive resin (7) to the plate-like semiconductor wafer laminate (1) cutting portion between (6), plate-like semiconductor wafer laminate (1) between the adhesive resin ( fixed at 7). これにより、図4に示すように、複数の板状の半導体ウエハ積層体(1)が接着用樹脂(7)を介して一体化され、元の平面円形状の半導体ウエハ積層体(1)に復元される。 Thus, as shown in FIG. 4, a plurality of plate-like semiconductor wafer laminate (1) is integrated via an adhesive resin (7), the original flat circular semiconductor wafer laminate (1) It is restored.

【0016】続いて、半導体ウエハ積層体(1)の主面(1 [0016] Then, the main surface of the semiconductor wafer laminate (1) (1
a)、即ち半導体ウエハ積層体(1)の最上部に配置された半導体ウエハ(2)に対して第一の方向(X方向)と直交する第二の方向(Y方向)にワイヤを往復動作させて、 a), that the semiconductor wafer laminate (1) of the second direction (reciprocated wire in the Y direction) orthogonal to the first direction relative to the semiconductor wafer which is placed at the top (2) (X-direction) by,
図5に示すように、半導体ウエハ積層体(1)の各半導体ウエハ(2)及び半田層(3)並びに板状の半導体ウエハ積層体(1)の相互間を固着する接着用樹脂(7)を第二の方向に切断する。 As shown in FIG. 5, the semiconductor wafer (2) and a solder layer of a semiconductor wafer stack (1) (3) and the adhesive resin for fixing the mutual plate-like semiconductor wafer laminate (1) (7) the cutting in a second direction. この結果、半導体ウエハ積層体(1)は、棒状の半導体ウエハ積層体(1)に分離される。 As a result, the semiconductor wafer laminate (1) is separated into a rod of a semiconductor wafer stack (1). このとき、一部の棒状の半導体ウエハ積層体(1)は、支持板(5)から外れることがある。 At this time, the semiconductor wafer laminate portion of the rod-shaped (1) may be disengaged from the support plate (5).

【0017】更に、半導体ウエハ積層体(1)をエッチング液中に浸漬して、半導体ウエハ積層体(1)(チップ積層体)を支持板(5)に固着する接着剤層(1c)と、半導体ウエハ積層体(1)の相互間を固着する接着用樹脂(7)とをエッチング液により溶解させて除去する。 Furthermore, by immersing the semiconductor wafer laminate (1) in the etching solution, the semiconductor wafer laminated body (1) an adhesive layer to stick to (chip stack) the support plate (5) (1c), semiconductor wafer laminate an adhesive resin for fixing (7) between each other (1) is dissolved by the etching solution is removed. 半導体ウエハ積層体(1)(チップ積層体)の側面に形成された磁性物質層(4)は前記エッチング液により除去されない。 Semiconductor wafer laminate (1) magnetic material layer formed on the side surface of the (chip stack) (4) it is not removed by the etchant. この結果、図6に示すように、各半導体ウエハ積層体(1)は支持板(5)から分離されると共に、相互に分離され、個別の棒状の各半導体チップ積層体(8)が得られる。 As a result, as shown in FIG. 6, with each semiconductor wafer laminate (1) is separated from the support plate (5), are separated from each other, each semiconductor chip laminated body of the individual rod-shaped (8) is obtained . 図6 Figure 6
に示すように、半導体チップ積層体(8)の内側に配置され且つ矩形断面を有する正規の形状の半導体チップ積層体(8)は、平坦な側面に磁性物質層(4)が固着されていないが、半導体チップ積層体(8)のうち、外周側に配置された半導体チップ積層体(8)は、図7に示すように、円弧状の側面に磁性物質層(4)が固着されている。 As shown in a regular semiconductor chip laminated body shape with the placed and rectangular cross-section on the inside of the semiconductor chip laminated body (8) (8) is not a magnetic material layer on the flat side (4) is fixed but of the semiconductor chip laminated body (8), the semiconductor chip stack disposed on the outer peripheral side (8), as shown in FIG. 7, the magnetic material layer (4) is fixed to the arc-shaped side surface .

【0018】最後に、図7に示すように、相互に分離された半導体チップ積層体(8)に磁石(10)を近づけると、 [0018] Finally, as shown in FIG. 7, is brought close to the magnet (10) mutually separated semiconductor chips stacked body (8),
側面に磁性物質層(4)を設けた半導体チップ積層体(8) The semiconductor chip laminated body provided magnetic material layer (4) on the sides (8)
は、磁石(10)に吸着される。 It is attracted by a magnet (10). 一方、側面に磁性物質層 On the other hand, a magnetic material layer on the side surface
(4)が形成されない図6の半導体チップ積層体(8)は磁石 (4) a semiconductor chip laminated body of Figure 6 is not formed (8) is a magnet
(10)に吸着されない。 Not adsorbed to (10). この結果、半導体ウエハ積層体 As a result, semiconductor wafer laminate
(1)の外周側に配置され且つ製品の製造に供することができない円弧状側面を有する形状不良の半導体チップ積層体(8)を容易に且つ確実に判別・除去することができる。 (1) shape defect of the semiconductor chip laminated body periphery is disposed on the side and has an arc-shaped side face which can not be subjected to production of products (8) can be easily and reliably determine and removal of. このように、本実施の形態では、半導体ウエハ(2) Thus, in this embodiment, the semiconductor wafer (2)
の側面に磁性物質層(4)が設けられるので、半導体ウエハ(2)を個々の半導体チップ又は半導体チップ積層体(8) The side surface of the magnetic material layer (4) are provided, each of the semiconductor chips or semiconductor chip laminated body of the semiconductor wafer (2) (8)
に切断したとき、半導体チップ又は半導体チップ積層体 When cut, the semiconductor chip or a semiconductor chip laminated body
(8)の側面に形成された磁性物質層(4)の有無により製品形状の良否を自動的に識別することができる。 The presence or absence of the magnetic material layer formed on the side surfaces (8) (4) can identify the quality of the product shape automatically.

【0019】本発明の前記実施の形態は種々の変更が可能である。 [0019] The embodiment of the present invention can be variously modified. 例えば、前記実施の形態では、複数の半導体ウエハ(2)を半田層(3)を介して固着された半導体ウエハ積層体(1)を切断する場合について説明したが、単数の半導体ウエハの切断分離する場合にも適用できる。 For example, the above embodiment has described the case of cutting a plurality of semiconductor wafers (2) the solder layer (3) is fixed through the semiconductor wafer laminate (1), cut separation of the semiconductor wafer singular It can also be applied in the case of. 板状の半導体ウエハ積層体(1)の相互間を固着する接着用樹脂(7)は設けなくても良いが、特に半導体ウエハ積層体 Plate-like semiconductor wafer laminate (1) adhesive resin (7) for fixing the mutual of may not be provided but, in particular a semiconductor wafer laminate
(1)の場合は、ワイヤソーでY方向に容易に切断できるように、接着用樹脂(7)を設けることが望ましい。 (1) In the case of, so that it can be easily cut in the Y direction in the wire saw, it is desirable to provide an adhesive resin (7). ワイヤソーを使用して切断する代わりに、周知のダイシングブレード(高速回転する円形刃)を使用して切断分離してもよい。 Instead of cut using a wire saw, or may be cut and separated using known dicing blade (circular blade rotating at a high speed). 本発明の実施の形態では、半導体チップ積層体(8)に磁石(10)を近接させて、製品の形状良否を決定する代わりに、ホール素子等の磁気感応素子により製品の形状良否を選別してもよい。 In the embodiment of the present invention, it is brought close to the magnet (10) on the semiconductor chip laminated body (8), instead of determining the shape quality of the product, were selected shape quality of the product by the magnetic sensitive element such as a Hall element it may be.

【0020】 [0020]

【発明の効果】前記のように、本発明によれば、半導体チップの形状良否を自動的に且つ確実に選別できるので、半導体チップの生産性を向上することができる。 [Effect of the Invention] As described above, according to the present invention, since the shape quality of the semiconductor chip can be automatically and reliably sorted, it is possible to improve the productivity of the semiconductor chip.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】 本発明による半導体ウエハ積層体の製造に使用する半導体ウエハ積層体の斜視図 Perspective view of a semiconductor wafer laminated body used for manufacturing a semiconductor wafer laminated body according to the invention; FIG

【図2】 側面に磁性物質層を形成し且つ支持板上に固着した半導体ウエハ積層体の斜視図 2 is a perspective view of a semiconductor wafer laminated body which is fixed to the magnetic material layer is formed and the support plate on the side surface

【図3】 第一の方向に切断した半導体ウエハ積層体の斜視図 3 is a perspective view of a semiconductor wafer laminated body cut in a first direction

【図4】 切断部に接着用樹脂を充填した半導体ウエハ積層体の斜視図 4 is a perspective view of a semiconductor wafer laminated body filled with the adhesive resin to the cutting portion

【図5】 第二の方向に切断した半導体ウエハ積層体の斜視図 5 is a perspective view of a semiconductor wafer laminated body cut in a second direction

【図6】 正規の形状を有する半導体チップ積層体の斜視図 6 is a perspective view of a semiconductor chip laminated body having a regular shape

【図7】 不合格の半導体チップ積層体の斜視図 Figure 7 is a perspective view of a fail semiconductor chip laminated body

【符号の説明】 DESCRIPTION OF SYMBOLS

(1)・・半導体ウエハ積層体、 (1a)・・主面、 (1b) (1) .. semiconductor wafer laminated body, (1a) ... main surface, (1b)
・・主面、 (1c)・・接着剤層、 (2)・・半導体ウエハ、 (3)・・半田層、 (4)・・磁性物質層、(5)・・ · Main surface, (1c) ... adhesive layer, (2) ... semiconductor wafer, (3) ... solder layer, (4) ... magnetic material layer, (5) ..
支持板、 (6)・・切断部、 (7)・・接着用樹脂、 Support plate (6) ... cutting unit, (7) .. adhesive resin,
(8)・・半導体チップ積層体、 (8) ... semiconductor chip laminate,

Claims (11)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 電子素子又はパターンが物理化学的に形成された少なくとも1つの主面を有する半導体ウエハにおいて、 前記半導体ウエハの側面に磁性物質層を設けたことを特徴とする半導体ウエハ。 1. A electrons in a semiconductor wafer having at least one major surface element or the pattern is physicochemically formed, a semiconductor wafer, characterized in that a magnetic material layer on the side surface of the semiconductor wafer.
  2. 【請求項2】 前記磁性物質層は、磁性粉体と、磁性粉体を連結する結合剤である請求項1に記載の半導体ウエハ。 Wherein said magnetic material layer, a semiconductor wafer according to claim 1, wherein the binder for connecting the magnetic powder, the magnetic powder.
  3. 【請求項3】 前記半導体ウエハは、複数の半導体ウエハを積層した半導体ウエハ積層体を構成し、隣合う複数の前記半導体ウエハは半田層により相互に固着された請求項1又は2に記載の半導体ウエハから成る半導体ウエハ組立体。 Wherein the semiconductor wafer has a plurality of the semiconductor wafer constitutes a laminated semiconductor wafer laminated body, a semiconductor of a plurality of said semiconductor wafer according to claim 1 or 2 secured to one another by a solder layer adjacent semiconductor wafer assembly consisting of a wafer.
  4. 【請求項4】 前記磁性物質層は、磁性粉体と、磁性粉体を連結する結合剤である請求項3に記載の半導体ウエハ組立体。 Wherein said magnetic material layer comprises a magnetic powder, a semiconductor wafer assembly according to claim 3, wherein the binder for connecting the magnetic powder.
  5. 【請求項5】 半導体ウエハの側面に磁性物質層を形成する工程と、 直径方向面又は直径方向面と平行な面に沿って前記半導体ウエハを切断して個々の半導体チップを形成する工程と、 前記磁性物質層を検出して、前記磁性物質層を有する形状不良の半導体チップを選別する工程とを含むことを特徴とする半導体ウエハ切断法。 5. A process of forming a magnetic material layer on the side surface of the semiconductor wafer, a step of forming individual semiconductor chips by cutting the semiconductor wafer along a plane parallel to the diametral plane or diameter direction surface, semiconductor wafer cutting method which comprises the step of selecting said detects the magnetic material layer, the shape defect of the semiconductor chip having the magnetic material layer.
  6. 【請求項6】 前記半導体チップに磁石を近接させて、 6. in close proximity to magnets on the semiconductor chip,
    前記磁性物質層を有する形状不良の半導体チップを前記磁石に吸着させて選別する請求項5に記載の半導体ウエハ切断法。 Semiconductor wafer cutting method according to claim 5 for selecting a defective shape of the semiconductor chip having the magnetic material layer is adsorbed to the magnet.
  7. 【請求項7】 磁気感応素子により前記磁性物質層を有する形状不良の半導体チップを選別する請求項6に記載の半導体ウエハ切断法。 7. A semiconductor wafer cutting method according to claim 6 for sorting defective shape of the semiconductor chip having the magnetic material layer by the magnetically sensitive element.
  8. 【請求項8】 積層した複数の半導体ウエハの側面に磁性物質層を形成した半導体ウエハ積層体を用意する工程と、 直径方向面又は直径方向面と平行な面に沿って前記半導体ウエハ積層体を切断して半導体チップ積層体を形成する工程と、 前記磁性物質層を検出して、前記磁性物質層を有する形状不良の前記半導体チップ積層体を選別する工程とを含むことを特徴とする半導体ウエハ組立体切断法。 8. A side face of the plurality of semiconductor wafers stacked providing a semiconductor wafer stack to form a magnetic material layer, the semiconductor wafer laminated body along a plane parallel to the diametral plane or diameter direction surface forming a semiconductor chip laminated body was cut, the detected magnetic material layer, a semiconductor wafer which comprises a step of selecting said semiconductor chip laminated body of the shape defect with the magnetic material layer The assembly cutting method.
  9. 【請求項9】 前記半導体チップ積層体に磁石を近接させて、前記磁性物質層を有する形状不良の半導体チップ積層体を前記磁石に吸着させて選別する請求項8に記載の半導体ウエハ組立体切断法。 9. in close proximity to magnets in the semiconductor chip laminated body, a semiconductor wafer assembly cut according to the magnetic material layer semiconductor chip laminated body of the shape defect with the claim 8 to select adsorbed to the magnet law.
  10. 【請求項10】 磁気感応素子により前記磁性物質層を有する形状不良の半導体チップ積層体を選別する請求項8に記載の半導体ウエハ組立体切断法。 10. A semiconductor wafer assembly cutting method according to claim 8 for selecting a defective shape of the semiconductor chip laminated body having the magnetic material layer by the magnetically sensitive element.
  11. 【請求項11】 直径方向面又は直径方向面と平行な面に沿って切断した前記半導体ウエハ積層体の切断部に接着用樹脂を充填して、板状の前記半導体ウエハ積層体間を前記接着用樹脂で固着する工程と、前記の面と直角な面に沿って更に前記半導体ウエハ積層体を切断する工程と、エッチング液中に前記半導体ウエハ積層体を浸漬して、前記接着用樹脂を溶解し、半導体チップ積層体を形成する工程とを含む請求項8に記載の半導体ウエハ組立体切断法。 11. filled with the adhesive resin to the cut portion of the semiconductor wafer laminated body taken along the plane parallel to the diametral plane or diameter direction side, the adhesive between plate-like the semiconductor wafer laminate dissolving a step of fixing by use resin, a step of further cutting the semiconductor wafer laminated body along the surface and perpendicular surface by immersing the semiconductor wafer laminate in the etching solution, the adhesive resin and, a semiconductor wafer assembly cutting method according to claim 8 including the step of forming a semiconductor chip laminated body.
JP3942099A 1999-02-18 1999-02-18 Semiconductor wafer, and cutting method thereof, and semiconductor wafer assembly and cutting method thereof Pending JP2000243797A (en)

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