JP2000235990A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2000235990A JP2000235990A JP11037954A JP3795499A JP2000235990A JP 2000235990 A JP2000235990 A JP 2000235990A JP 11037954 A JP11037954 A JP 11037954A JP 3795499 A JP3795499 A JP 3795499A JP 2000235990 A JP2000235990 A JP 2000235990A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- fine
- electrode
- bump
- bump electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13016—Shape in side view
- H01L2224/13018—Shape in side view comprising protrusions or indentations
- H01L2224/13019—Shape in side view comprising protrusions or indentations at the bonding interface of the bump connector, i.e. on the surface of the bump connector
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
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- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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- H01L2224/8134—Bonding interfaces of the bump connector
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
- H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
- H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
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- H01—ELECTRIC ELEMENTS
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8336—Bonding interfaces of the semiconductor or solid state body
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体装置に関し、
特にバンプ電極を有する半導体ペレットを接着材を介し
て配線基板に接着した半導体装置に関する。The present invention relates to a semiconductor device,
In particular, the present invention relates to a semiconductor device in which a semiconductor pellet having a bump electrode is bonded to a wiring board via an adhesive.
【０００２】[0002]
【従来の技術】可搬形の例えばビデオカメラやノート型
パーソナルコンピュータなどの電子回路装置では小型、
軽量化が要求され、これに用いられる電子部品も一層の
小型化が要求されている。また電子制御装置によって制
御される機械装置でも、作業ポジションにあるモータな
どの駆動機構に制御部を直接的に組み込んで高精度かつ
高速制御を可能としているが、このような制御部も取付
位置や取付寸法の制約がある場合、小型化、高密度実装
が強く要求されている。このような要求に対応するの
に、電子部品の形状を変えたり電子部品本体を縮小する
などして小型化する方法と、外形寸法は同じかあるいは
大型化しても複数の機能部品を集積化して実質的に小型
化する方法とがある。また電子部品本体を直接的に配線
基板に実装して実装密度を高め小型化を実現している。
図７は高密度実装構造の半導体装置を示す。図におい
て、１は半導体ペレットで、半導体基板２内に図示省略
するが多数の電子回路素子を形成して内部接続し、その
一主面に電子回路の要部と接続されたバンプ電極３を多
数形成したものである。４は配線基板で、セラミックや
ガラス、エポキシ樹脂、ガラスエポキシ樹脂などの絶縁
基板５上に配線用の導電パターン６を形成し、導電パタ
ーン６上をレジスト膜７で被覆し、このレジスト膜７の
うち半導体ペレット１のバンプ電極３と対応する部分を
窓明けして導電パターン６の一部を露呈させパッド電極
８を形成している。９は配線基板４上のパッド電極８で
囲まれる領域に予め供給され、バンブ電極３とパッド電
極８とを位置決めした状態で配線基板４に対向配置され
た半導体ペレット１によって押し拡げられた樹脂系接着
材で、熱硬化性のエポキシ樹脂などが用いられる。この
半導体装置は、半導体ペレット１を加圧してバンプ電極
３とパッド電極８とを圧接させ電気的に接続する際に、
配線基板４上に予め供給された接着材９が電極重合部間
に流入するが、バンプ電極３の端面が凸球面状をなしパ
ッド電極８と当接する面積が微小であると重合加圧され
る時に樹脂の噛み込みが少なく、加圧が進行すると圧着
面から接着材を順次追い出しつつ圧着面がパッド電極の
中央部から外方に拡大するため各電極３、８は密着し電
気的に支障なく接続する。このような形状のバンプ電極
は、例えばキャピラリに挿通した金属ワイヤの先端に金
属ボールを形成してこの金属ボールをキャピラリの下端
で半導体基板に押し付けた後にワイヤを引き切ることに
より形成することができる。ところで小型の半導体装置
では単位体積当たりの発熱量が大きくなるため半導体ペ
レット１で発生した熱を効率よく放熱する必要がある。
そのため接着材に熱伝導性が良好なフィラーを分散させ
た高熱伝導性の接着材を用いている。このフィラーは金
属微粒子が好ましいが、シリカやアルミナなどの熱伝導
性が良好な微粒子も用いられる。また小型の半導体装置
では外形寸法と同時に軽量化の要求もあり、これに対応
するため配線基板４の絶縁基板５としてセラミックやガ
ラスの代わりに樹脂製の基板が用いられる。この場合、
半導体ペレット１と配線基板４ではそれぞれの熱膨張率
が大きく異なるため、半導体ペレットが動作し発熱して
温度上昇すると配線基板４が大きく反る。接着材９は両
者を強固に接着しているが、半導体装置の動作と停止を
繰り返すと、熱膨張、収縮を繰り返して接着界面に亀裂
を生じ、この亀裂が成長してバンプ電極３とパッド電極
８の接続部に反り応力が集中して電気的接続を損なうと
いう問題があった。そのため、接着材９の熱膨張率を半
導体ペレット１と配線基板４のそれぞれの熱膨張率の中
間に調整することにより、両者の接着界面での熱膨張率
の差を緩和し半導体装置の信頼性を向上させている。こ
の熱膨張率を調整するため接着材９のベース樹脂に粒径
２〜２０μｍのシリカやアルミナなどの微粒子からなる
フィラーを５０〜７０重量％程度分散させている。一
方、バンプ電極３とパッド電極８とを接続するための加
圧力は、電極数が増加すると比例して増大する。このと
き多数のバンプ電極３は高さのばらつきが顕著である
と、加圧作業の開始時に突出した少数のバンプ電極に過
大な力がかかり損傷することがあった。また背の高いバ
ンプ電極が多数ある場合には、加圧力が分散されて多数
の電極を強固に接続できるが背の低い少数のバンプ電極
は加圧力が十分伝達されず接続強度も十分ではなかっ
た。このような問題は電極数が増加すると生じ易く、金
属ボールによって形成されたバンプ電極を有する半導体
装置では顕著であるため、バンプ電極形成面に硬質の平
坦なプレートを押し付けてバンプ電極の高さを揃えるレ
ベリング処理をしている。2. Description of the Related Art A portable electronic circuit device such as a video camera and a notebook personal computer has a small size.
Light weight is required, and the electronic components used for this are also required to be further reduced in size. In mechanical devices controlled by the electronic control unit, high-precision and high-speed control is possible by directly incorporating a control unit into a drive mechanism such as a motor in a work position. When there are restrictions on mounting dimensions, miniaturization and high-density mounting are strongly required. In order to respond to such demands, a method of reducing the size by changing the shape of the electronic component or reducing the size of the electronic component body, and integrating a plurality of functional components even if the external dimensions are the same or large are adopted. There is a method of substantially reducing the size. In addition, the electronic component body is directly mounted on the wiring board to increase the mounting density and achieve miniaturization.
FIG. 7 shows a semiconductor device having a high-density mounting structure. In the figure, reference numeral 1 denotes a semiconductor pellet, which is formed in a semiconductor substrate 2 (not shown), and has a number of electronic circuit elements formed therein, which are internally connected to each other, and a plurality of bump electrodes 3 connected to a main part of the electronic circuit on one principal surface thereof. It is formed. Reference numeral 4 denotes a wiring board, which forms a conductive pattern 6 for wiring on an insulating substrate 5 of ceramic, glass, epoxy resin, glass epoxy resin, or the like, covers the conductive pattern 6 with a resist film 7, A pad electrode 8 is formed by opening a portion corresponding to the bump electrode 3 of the semiconductor pellet 1 and exposing a part of the conductive pattern 6. Reference numeral 9 denotes a resin-based resin which is supplied in advance to a region surrounded by the pad electrode 8 on the wiring substrate 4 and is expanded by the semiconductor pellet 1 disposed opposite to the wiring substrate 4 in a state where the bump electrode 3 and the pad electrode 8 are positioned. As an adhesive, a thermosetting epoxy resin or the like is used. In this semiconductor device, when the semiconductor pellet 1 is pressed and the bump electrode 3 and the pad electrode 8 are pressed and electrically connected,
The adhesive material 9 previously supplied onto the wiring substrate 4 flows between the electrode overlapping portions. However, when the end surface of the bump electrode 3 has a convex spherical shape and the area in contact with the pad electrode 8 is small, the overlapping pressure is applied. Sometimes, the resin is less bite, and as the pressing progresses, the adhesive material is sequentially expelled from the pressure-bonding surface and the pressure-bonding surface expands outward from the center of the pad electrode. Connecting. The bump electrode having such a shape can be formed, for example, by forming a metal ball at the tip of a metal wire inserted into a capillary, pressing the metal ball against a semiconductor substrate at the lower end of the capillary, and then cutting off the wire. . By the way, in a small-sized semiconductor device, the amount of heat generated per unit volume increases, so that it is necessary to efficiently radiate the heat generated in the semiconductor pellet 1.
Therefore, a high thermal conductive adhesive in which a filler having good thermal conductivity is dispersed in the adhesive is used. The filler is preferably metal fine particles, but fine particles having good thermal conductivity such as silica and alumina are also used. In addition, in the case of a small-sized semiconductor device, there is a demand for weight reduction as well as external dimensions. To meet this requirement, a resin substrate is used as the insulating substrate 5 of the wiring substrate 4 instead of ceramic or glass. in this case,
Since the thermal expansion coefficients of the semiconductor pellet 1 and the wiring board 4 are greatly different from each other, when the semiconductor pellet operates and generates heat to increase the temperature, the wiring board 4 is greatly warped. The adhesive 9 firmly adheres the two, but when the operation and stop of the semiconductor device are repeated, thermal expansion and contraction are repeated, and a crack is generated at the bonding interface, and the crack grows and the bump electrode 3 and the pad electrode 8 has a problem that the warpage stress is concentrated on the connection portion and the electrical connection is impaired. Therefore, by adjusting the coefficient of thermal expansion of the adhesive 9 to an intermediate value between the coefficient of thermal expansion of the semiconductor pellet 1 and the coefficient of thermal expansion of the wiring substrate 4, the difference in coefficient of thermal expansion at the bonding interface between the two is reduced, and the reliability of the semiconductor device is reduced. Has been improved. In order to adjust the coefficient of thermal expansion, about 50 to 70% by weight of a filler made of fine particles such as silica or alumina having a particle size of 2 to 20 μm is dispersed in the base resin of the adhesive 9. On the other hand, the pressing force for connecting the bump electrode 3 and the pad electrode 8 increases in proportion to the number of electrodes. At this time, if the height variation of the large number of bump electrodes 3 is remarkable, an excessive force may be applied to the small number of bump electrodes protruding at the start of the pressing operation, and the bump electrodes 3 may be damaged. When there are many tall bump electrodes, the pressing force is dispersed and many electrodes can be connected firmly, but the pressing force is not sufficiently transmitted to a small number of short bump electrodes, and the connection strength is not sufficient. . Such a problem is likely to occur when the number of electrodes increases, and is remarkable in a semiconductor device having a bump electrode formed by a metal ball. Therefore, a hard flat plate is pressed against the bump electrode formation surface to increase the height of the bump electrode. Leveling processing is performed to align.
【０００３】[0003]
【発明が解決しようとする課題】ところが上記レベリン
グ処理により端面が平坦なバンプ電極を有する半導体ペ
レットやめっき処理により形成された端面が平坦なバン
プ電極を有する半導体ペレットを熱伝導性を良好にし熱
膨張率の問題を解消するためにフィラーを多量に分散さ
せた接着材を用いて配線基板に接着する場合、フィラー
がシリカやアルミナなどの電気的に絶縁性の材料では、
バンプ電極とパッド電極との間にフィラーが噛み込まれ
ると、電気的接続が不安定となり信頼性が低下し、全く
導通しない電極が１ケ所でもあると半導体装置を不良に
するという問題があった。この電極間にフィラーを噛み
込むという問題は金属ボールにより形成したバンプ電極
を有する半導体ペレットであってレベリング処理をしな
いものでも生じるが、この場合にはフィラーの噛み込み
は電極圧着面の中央部に限定され、しかも噛み込み面積
は電極圧着面の１０％程度であるため、実質的な問題は
ない。しかしながらレベリング処理するとバンプ電極と
パッド電極の対向面積が拡大してフィラーを噛み込む確
率が高まり、しかもこの対向面がほぼ平行となるためフ
ィラーを噛み込むと電極間に接着材のベース樹脂が残留
し電気的に完全に遮断される確率も高まるため信頼性が
低下するという問題があった。このような問題を解決す
るものとして、特開平１０−２５６３０４号公報にはバ
ンプ電極とパッド電極の電気的接続部をゴム状弾性を有
し銀粉体を含有させた導電性接着材で仮接続し、さらに
この接着材を加熱硬化させた後に、半導体ペレットと配
線基板とを熱硬化性エポキシ樹脂で接続した半導体装置
が開示されているが、接着材供給工程、加熱工程がそれ
ぞれ増加するため、コスト面から直ちに採用することが
出来なかった。また特開平１１−１６９４６号公報には
導電粒子を分散させた異方性導電膜をパッド電極を有す
る配線基板に貼り付け、その上からバンプ電極を有する
半導体ペレットを押圧し加熱して各電極を接続するとと
もに異方性導電膜を硬化させる半導体装置の実装方法が
開示され、各電極の接続を確実にするためバンプ電極に
導電粒子の粒径より小さい凹凸部を形成しこの凹凸部に
導電粒子を閉じ込めて電気的接続を確実にすることが開
示されているが、樹脂に分散させた微粒子が絶縁性の場
合には逆に電気的接続が不安定になるため採用すること
ができなかった。However, the above-mentioned leveling treatment can improve the thermal conductivity of semiconductor pellets having bump electrodes with flat end faces and semiconductor pellets having bump electrodes with flat end faces formed by plating to improve thermal conductivity. When bonding to a wiring board using an adhesive in which a large amount of filler is dispersed to eliminate the problem of the rate, when the filler is an electrically insulating material such as silica or alumina,
If the filler is caught between the bump electrode and the pad electrode, the electrical connection becomes unstable and the reliability decreases, and there is a problem that the semiconductor device becomes defective if there is only one electrode that does not conduct at all. . The problem of filler filling between the electrodes occurs even in semiconductor pellets having bump electrodes formed of metal balls and not subjected to leveling treatment, but in this case, the filler biting occurs at the center of the electrode crimping surface. There is no substantial problem because it is limited and the biting area is about 10% of the electrode crimping surface. However, the leveling process increases the area of opposition between the bump electrode and the pad electrode and increases the probability of biting the filler. In addition, since the opposing surfaces are almost parallel, the base resin of the adhesive remains between the electrodes when the filler is bitten. There has been a problem that reliability is reduced because the probability of complete electrical interruption is increased. To solve such a problem, Japanese Patent Application Laid-Open No. H10-256304 discloses a method of temporarily connecting an electrical connection portion between a bump electrode and a pad electrode with a conductive adhesive material having rubbery elasticity and containing silver powder. Then, after further heating and curing the adhesive, a semiconductor device in which the semiconductor pellet and the wiring board are connected with a thermosetting epoxy resin is disclosed.However, since the adhesive supply step and the heating step are increased, It could not be adopted immediately due to cost. In Japanese Patent Application Laid-Open No. 11-16946, an anisotropic conductive film in which conductive particles are dispersed is attached to a wiring board having pad electrodes, and a semiconductor pellet having bump electrodes is pressed from above and heated to form each electrode. A method of mounting a semiconductor device for connecting and curing an anisotropic conductive film is disclosed. In order to ensure connection of each electrode, bumps are formed on the bump electrode with irregularities smaller than the particle diameter of the conductive particles, and the conductive particles are formed on the irregularities. It is disclosed that the electrical connection is confined to ensure electrical connection. However, when the fine particles dispersed in the resin have insulating properties, the electrical connection becomes unstable, and conversely, it cannot be adopted.
【０００４】[0004]
【課題を解決するための手段】本発明は上記課題の解決
を目的として提案されたもので、バンプ電極を有する半
導体ペレットとパッド電極を有する配線基板とを樹脂系
接着材を介して対向させそれぞれの電極を重合させて加
圧し各電極間を電気的に接続するとともに半導体ペレッ
トと配線基板の対向面間を接着した半導体装置におい
て、加圧により変形する軟らかい金属で構成されかつパ
ッド電極と対向する面とこの面と隣接する周面に開口す
る微細な凹凸部を有するバンプ電極が、パッド電極に当
接して前記微細凹凸部の凸部が圧潰されて接続されたこ
とを特徴とする半導体装置を提供する。SUMMARY OF THE INVENTION The present invention has been proposed for the purpose of solving the above problems. A semiconductor pellet having bump electrodes and a wiring substrate having pad electrodes are opposed to each other via a resin-based adhesive. In the semiconductor device in which the electrodes are polymerized and pressed to electrically connect the electrodes and the semiconductor pellet and the opposing surface of the wiring substrate are bonded to each other, the semiconductor device is made of a soft metal deformed by the pressure and faces the pad electrode. A semiconductor device, wherein a bump electrode having a surface and fine irregularities opening on a peripheral surface adjacent to the surface is connected by contacting a pad electrode and crushing the convexities of the fine irregularities. provide.
【０００５】[0005]
【発明の実施の形態】本発明による半導体装置は、加圧
により変形する軟らかい金属でバンプ電極を構成しさら
にこのバンプ電極のパッド電極と対向する面とこの面と
隣接する周面に微細な凹凸部を形成して、この微細凹凸
部の凸部をパッド電極に当接して加圧し押し潰して接続
したものであるが、半導体ペレットと配線基板とを接着
する接着材として、電気的に絶縁性の微小粒子を分散さ
せたものを用いる場合、バンプ電極に形成した微細凹凸
部の開口径及び深さは、接着材中の微小粒子の径よりも
十分大きく設定する。またバンプ電極に形成した微細凹
凸部はバンプ電極の配列方向と交差する方向に形成する
ことができ、この場合には微細凹凸部の凹部底面が半導
体ペレットの主面とほぼ平行に形成することができる。
また微細凹凸部の深さを、ペレット中央部側が浅く、外
方に向かって深く設定することができ、バンプ電極の微
細凹凸部形成面を半導体ペレットの主面に対して傾斜さ
せることもできる。また接着材として、電気的に絶縁性
の微小粒子を分散させたものを用いる場合、バンプ電極
に形成した微細凹凸部の断面形状を略三角形状とする。
この場合にはパッド電極に当接して圧潰されたバンプ電
極の微細凹凸部の圧潰端部と隣接する凹部内壁面が互い
に近接対向させることができ、バンプ電極の圧潰により
互いに近接対向した凹部内壁面間に微細凹凸部間に残留
した接着材中のフィラーを閉じ込めることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS In a semiconductor device according to the present invention, a bump electrode is formed of a soft metal which is deformed by pressure, and fine bumps and dips are formed on a surface of the bump electrode facing the pad electrode and a peripheral surface adjacent to the bump electrode. Is formed by contacting the protruding portion of the fine concavo-convex portion with the pad electrode by applying pressure and crushing, and as an adhesive for bonding the semiconductor pellet and the wiring board, an electrically insulating portion is formed. In the case of using a material in which the fine particles are dispersed, the opening diameter and the depth of the fine irregularities formed on the bump electrode are set to be sufficiently larger than the diameter of the fine particles in the adhesive. In addition, the fine uneven portion formed on the bump electrode can be formed in a direction crossing the arrangement direction of the bump electrode. In this case, the bottom surface of the concave portion of the fine uneven portion may be formed substantially parallel to the main surface of the semiconductor pellet. it can.
Further, the depth of the fine unevenness can be set to be shallower toward the center of the pellet and deeper outward, and the surface of the bump electrode on which the fine unevenness is formed can be inclined with respect to the main surface of the semiconductor pellet. In the case where a material in which electrically insulating fine particles are dispersed is used as the adhesive, the cross-sectional shape of the fine uneven portion formed on the bump electrode is substantially triangular.
In this case, the crushed end portion of the fine unevenness portion of the bump electrode that has been crushed by contact with the pad electrode can be brought close to and opposed to the inner wall surface of the concave portion. The filler in the adhesive remaining between the fine uneven portions can be confined.
【０００６】[0006]
【実施例】以下に本発明の実施例を図１から説明する。
図において、図７と同一物には同一符号を付し重複する
説明を省略する。本発明では図２に示すようにバンプ電
極３を、加圧により変形する軟らかい金属、好ましくは
金で構成し、かつ多数の微細な凹凸部１０をパッド電極
８と対向する面即ち圧着端面とこの面と隣接する周面に
開口するように形成し、このバンプ電極３をパッド電極
８に当接して図１に示すように前記微細凹凸部１０の凸
部１０ａが圧潰されて接続されたことを特徴とする。図
中、１０は接着材９中に分散されたフィラーで、熱伝導
性、絶縁性がともに良好なシリカやアルミナなどの微粒
子を示す。この微細凹凸部１０はレベリング作業と同時
または別に、微細な凹凸を形成した硬質のプレートをバ
ンプ電極に押し当てることにより形成できる。またこの
微細凹凸部１０の開口径及び深さは、接着材により適宜
設定され、フィラーを分散させたものでは、このフィラ
ーの径より十分大きく設定する。例えばバンプ電極端部
の直径が５０μｍ、フィラーの粒径が５μｍの場合、微
細凹凸部の開口径２０μｍとし、この長さを一辺とする
正三角形状に形成する。この微細凹凸部１０はバンプ電
極の配列方向と交差する方向に形成されており、半導体
ペレット１の加圧により移動する樹脂の流れとほぼ同じ
方向に形成している。このように微細凹凸部１０は鋸歯
状であるため圧着端部はバンプ電極３の断面積に比して
極めて小さい微小面積である。そのためこのバンプ電極
３を図３に示すようにパッド電極８に当接し加圧すると
パッド電極３の微小端面に加圧力が集中し、微細凹凸部
１０の凸部１０ａを圧潰する。この圧潰はバンプ電極３
が軟らかい金属で出来ているため、バンプ電極３の沈み
込み量だけ側方に膨出し、図示点線状態から図示実線状
態の台形状に形状が変化し、凸部１０ａ間の凹部１０ｂ
は開口径と深さがともに縮小する。このとき微細凹凸部
１０の凸部１０ａはパッド電極８に密着したまま圧着面
積が拡大するため電気的接続を確実にしつつ凹部１０ｂ
内に残留したフィラー１１を凹部１０ｂから排除するこ
とができる。また、バンプ電極３の下端をさらに圧潰す
ると凹部１０ｂの開口径と深さが一層縮小し、最終的に
図４に示すように凸部１０ａの対向する側壁が近接し
て、凹部１０ｂ内に残留したフィラー１１を閉じ込める
ことができる。この結果、バンプ電極３とパッド電極８
の接続面積は最大となり、接続面はバンプ電極３とパッ
ド電極８とが直接接続するため電気的機械的接続を良好
にできる。図示例では、微細凹凸部１０は鋸歯状に形成
したが側面形状を台形状にすることにより微細凹凸部１
０の圧潰前後の高さの差を小さくできる。また上記実施
例では微細凹凸部１０の深さは一定にしたが、図５に示
すようにペレット１の中央部側が浅く、外方に向かって
深く設定することができる。これにより、配線基板４上
に予め供給された接着材９を半導体ペレット１が押圧し
て接着材９が流動しその中に含まれるフィラー１１が外
方に移動しても、微細凹凸部１０は内方の浅い部分がパ
ッド電極８に当接して直ちに圧潰されるため、加圧作業
中に微細凹部１０内へフィラー１１が流入することを阻
止できる。この時、微細凹凸部１０内に残留したフィラ
ー１１は図１実施例と同様に微細凹凸部１０の圧潰によ
って排出されるか凹部１０ｂ内に閉じ込められ、バンプ
電極３とパッド電極８は電気的機械的に接続される。こ
の図５実施例では、バンプ電極３の端面３ａは平坦で微
細凹凸部１０の深さを変化させたが、図６に示すように
バンプ電極３端面３ａを傾斜させ、この端面に同じ深さ
の微細凹凸部１０を形成しても、図５実施例とほぼ同等
の効果を得ることができる。尚、本発明は上記実施例に
のみ限定されることなく例えば、微細凹凸部１０は溝状
だけでなく図７に示すように多数の溝を格子状に形成し
て微細凹凸部を形成しても良い。このように多数の微細
凹凸部１０を形成することにより、全ての凸部１０ａを
完全に圧潰しなくでも電気的接続を良好にできる。また
微細凹凸部１０の側面形状は台形形状を含む略三角形状
が好ましいが、その凸部側壁の傾斜面は平坦である必要
はなく、凸湾曲させても良い。これにより、加圧による
圧潰量が小さくても凸部側壁を近接できる。FIG. 1 shows an embodiment of the present invention.
In the figure, the same components as those in FIG. 7 are denoted by the same reference numerals, and duplicate description will be omitted. In the present invention, as shown in FIG. 2, the bump electrode 3 is made of a soft metal, preferably gold, which is deformed by pressure, and a large number of fine irregularities 10 are formed on the surface facing the pad electrode 8, that is, the crimping end surface. The bump electrode 3 is formed so as to be open on the peripheral surface adjacent to the surface, and the bump electrode 3 is brought into contact with the pad electrode 8 so that the convex portion 10a of the fine uneven portion 10 is crushed and connected as shown in FIG. Features. In the figure, reference numeral 10 denotes a filler dispersed in the adhesive 9, and represents fine particles of silica or alumina having good thermal conductivity and insulating properties. The fine concavo-convex portions 10 can be formed by pressing a hard plate having fine concavities and convexities against the bump electrodes simultaneously with or separately from the leveling operation. The opening diameter and depth of the fine unevenness 10 are appropriately set by an adhesive, and when the filler is dispersed, the opening diameter and depth are set sufficiently larger than the diameter of the filler. For example, when the diameter of the end of the bump electrode is 50 μm and the particle diameter of the filler is 5 μm, the opening is 20 μm for the fine unevenness, and the length is defined as an equilateral triangle. The fine irregularities 10 are formed in a direction intersecting with the arrangement direction of the bump electrodes, and are formed in substantially the same direction as the flow of the resin that moves when the semiconductor pellet 1 is pressed. As described above, since the fine concavo-convex portion 10 has a saw-tooth shape, the crimped end portion has a very small area that is extremely smaller than the cross-sectional area of the bump electrode 3. Therefore, when the bump electrode 3 is pressed against the pad electrode 8 as shown in FIG. 3, the pressing force concentrates on the minute end face of the pad electrode 3 and crushes the convex portion 10 a of the fine uneven portion 10. This crush is caused by bump electrode 3
Is made of a soft metal, so that it bulges laterally by the amount of sinking of the bump electrode 3 and changes from a dotted state in the figure to a trapezoidal state in a solid line state in the figure, and the concave part 10b between the convex parts 10a.
Decreases both the opening diameter and the depth. At this time, the convex portion 10a of the fine concave / convex portion 10 is in close contact with the pad electrode 8 and the pressure contact area is enlarged.
The filler 11 remaining inside can be removed from the recess 10b. Further, when the lower end of the bump electrode 3 is further crushed, the opening diameter and the depth of the concave portion 10b are further reduced, and finally the opposing side walls of the convex portion 10a come close to each other and remain in the concave portion 10b as shown in FIG. The filled filler 11 can be confined. As a result, the bump electrode 3 and the pad electrode 8
The connection area is maximized, and the connection surface is directly connected between the bump electrode 3 and the pad electrode 8, so that good electrical and mechanical connection can be achieved. In the illustrated example, the fine concavo-convex portion 10 is formed in a saw-tooth shape.
The difference in height before and after the crush of 0 can be reduced. Further, in the above embodiment, the depth of the fine unevenness portion 10 is fixed, but as shown in FIG. 5, the central portion side of the pellet 1 can be set shallow and deeper outward. Accordingly, even if the semiconductor pellet 1 presses the adhesive 9 previously supplied on the wiring board 4 and the adhesive 9 flows, the filler 11 contained therein moves outward, so that the fine irregularities 10 Since the inner shallow portion comes into contact with the pad electrode 8 and is immediately crushed, it is possible to prevent the filler 11 from flowing into the minute concave portion 10 during the pressing operation. At this time, the filler 11 remaining in the fine uneven portion 10 is discharged by crushing the fine uneven portion 10 or confined in the concave portion 10b as in the embodiment of FIG. 1, and the bump electrode 3 and the pad electrode 8 are electrically Connected. In the embodiment of FIG. 5, the end face 3 a of the bump electrode 3 is flat and the depth of the fine unevenness 10 is changed. However, as shown in FIG. 6, the end face 3 a of the bump electrode 3 is inclined, and the end face has the same depth. Even if the fine uneven portion 10 is formed, the effect almost equivalent to the embodiment of FIG. 5 can be obtained. The present invention is not limited to the above embodiment. For example, the fine uneven portion 10 may be formed by forming a large number of grooves in a lattice shape as shown in FIG. Is also good. By forming a large number of fine irregularities 10 in this manner, good electrical connection can be achieved without completely crushing all the projections 10a. The side surface shape of the fine uneven portion 10 is preferably a substantially triangular shape including a trapezoidal shape, but the inclined surface of the side wall of the convex portion need not be flat and may be convexly curved. Thereby, even if the amount of crush by pressurization is small, the side wall of the convex portion can be approached.
【０００７】[0007]
【発明の効果】以上のように本発明によれば予め配線基
板上に供給した接着材が半導体ペレットによって押し拡
げられバンプ電極とパッド電極が接触する前に各電極間
を満たすような場合でも、特に接着材が電気的に絶縁性
の粒状フィラーを分散させたもので、バンプ電極がレベ
リングされたものであっても、バンプ電極とパッド電極
の電気的機械的接続を確実にできる。As described above, according to the present invention, even if the adhesive supplied beforehand on the wiring substrate is spread by the semiconductor pellets and the gap between the bump electrodes and the pad electrodes comes into contact with each other, In particular, even if the adhesive is a material in which an electrically insulating particulate filler is dispersed and the bump electrode is leveled, electrical and mechanical connection between the bump electrode and the pad electrode can be ensured.
【図１】 本発明の実施例を示す半導体装置の要部側断
面図FIG. 1 is a side sectional view of a main part of a semiconductor device showing an embodiment of the present invention.
【図２】 図１は半導体装置の半導体ペレットに形成さ
れたバンプ電極の一例を示す要部側面図FIG. 1 is a side view of an essential part showing an example of a bump electrode formed on a semiconductor pellet of a semiconductor device.
【図３】 図１半導体装置のバンプ電極が圧潰される状
態を示す側面図FIG. 3 is a side view showing a state in which a bump electrode of the semiconductor device is crushed;
【図４】 図１半導体装置のバンプ電極が圧潰された状
態を示す側面図FIG. 4 is a side view showing a state in which a bump electrode of the semiconductor device is crushed;
【図５】 バンプ電極に形成される微細凹凸部の変形例
を示す側断面図FIG. 5 is a side sectional view showing a modified example of a fine uneven portion formed on a bump electrode.
【図６】 バンプ電極に形成される微細凹凸部の変形例
を示す側断面図FIG. 6 is a side sectional view showing a modified example of the fine uneven portion formed on the bump electrode.
【図７】 従来の半導体装置の一例を示す側断面図FIG. 7 is a side sectional view showing an example of a conventional semiconductor device.
１ 半導体ペレット ３ バンプ電極 ４ 配線基板 ５ 絶縁基板 ８ パッド電極 ９ 樹脂系接着材 １０ 微細凹凸部 １０ａ 凸部 DESCRIPTION OF SYMBOLS 1 Semiconductor pellet 3 Bump electrode 4 Wiring board 5 Insulating substrate 8 Pad electrode 9 Resin-based adhesive material 10 Fine unevenness 10a Projection
Claims (9)
導体ペレットと、絶縁基板上に少なくとも前記半導体ペ
レットのバンプ電極と対応してパッド電極が形成された
配線基板とを樹脂系接着材を介して対向させそれぞれの
電極を重合させて加圧し各電極間を電気的に接続すると
ともに半導体ペレットと配線基板の対向面間を接着した
半導体装置において、 加圧により変形する軟らかい金属で構成されかつパッド
電極と対向する面とこの面と隣接する周面に開口する微
細な凹凸部を有するバンプ電極が、パッド電極に当接し
て前記微細凹凸部の凸部が圧潰されて接続されたことを
特徴とする半導体装置。1. A resin-based adhesive comprising: a semiconductor pellet having a large number of bump electrodes formed on one main surface; and a wiring substrate having a pad electrode formed on an insulating substrate at least corresponding to the bump electrode of the semiconductor pellet. In a semiconductor device in which the electrodes are superposed and pressurized by applying pressure to each other to electrically connect the electrodes and bond the opposing surfaces of the semiconductor pellet and the wiring substrate to each other, the semiconductor device is made of a soft metal which is deformed by pressurization. A bump electrode having a surface facing the pad electrode and a fine uneven portion opened on a peripheral surface adjacent to the surface is in contact with the pad electrode, and the convex portion of the fine uneven portion is crushed and connected. Characteristic semiconductor device.
着材が、電気的絶縁性の微小粒子を分散させたものであ
り、バンプ電極に形成した微細凹凸部の開口径及び深さ
が、接着材中の微小粒子の径よりも十分大きく設定され
たことを特徴とする請求項１に記載の半導体装置。2. An adhesive for bonding a semiconductor pellet and a wiring board, wherein electrically insulating fine particles are dispersed, and the opening diameter and depth of the fine uneven portion formed on the bump electrode are determined by the bonding method. 2. The semiconductor device according to claim 1, wherein the diameter is set sufficiently larger than the diameter of the fine particles in the material.
電極の配列方向と交差する方向に形成されたことを特徴
とする請求項１に記載の半導体装置。3. The semiconductor device according to claim 1, wherein the fine irregularities formed on the bump electrodes are formed in a direction intersecting with the arrangement direction of the bump electrodes.
主面とほぼ平行に形成されたことを特徴とする請求項３
に記載の半導体装置。4. The semiconductor device according to claim 3, wherein a bottom surface of the concave portion of the fine concave / convex portion is formed substantially parallel to a main surface of the semiconductor pellet.
3. The semiconductor device according to claim 1.
浅く、外方に向かって深く設定したことを特徴とする請
求項３に記載の半導体装置。5. The semiconductor device according to claim 3, wherein the depth of the fine concavo-convex portion is set to be shallower at the center of the pellet and deeper outward.
レットの主面に対して傾斜していることを特徴とする請
求項３に記載の半導体装置。6. The semiconductor device according to claim 3, wherein the surface of the bump electrode on which the fine irregularities are formed is inclined with respect to the main surface of the semiconductor pellet.
状が略三角形状であることを特徴とする請求項２に記載
の半導体装置。7. The semiconductor device according to claim 2, wherein the cross-sectional shape of the fine unevenness formed on the bump electrode is substantially triangular.
極の微細凹凸部の圧潰端部と隣接する凹部内壁面が互い
に近接対向することを特徴とする請求項７に記載の半導
体装置。8. The semiconductor device according to claim 7, wherein a crushed end portion of the fine unevenness portion of the bump electrode crushed in contact with the pad electrode and an inner wall surface of the adjacent concave portion are closely opposed to each other.
た凹部内壁面間に微細凹凸部間に残留した接着材中のフ
ィラーを閉じ込めたことを特徴とする請求項８に記載の
半導体装置。9. The semiconductor device according to claim 8, wherein the filler in the adhesive remaining between the fine irregularities is confined between the inner wall surfaces of the concave portions facing each other due to the crushing of the bump electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11037954A JP2000235990A (en) | 1999-02-17 | 1999-02-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11037954A JP2000235990A (en) | 1999-02-17 | 1999-02-17 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000235990A true JP2000235990A (en) | 2000-08-29 |
Family
ID=12511956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11037954A Pending JP2000235990A (en) | 1999-02-17 | 1999-02-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000235990A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005069364A1 (en) * | 2004-01-13 | 2005-07-28 | Matsushita Electric Industrial Co., Ltd. | Mounted board, electronic component mounting method, electronic component, and wiring board |
| JP2007324278A (en) * | 2006-05-31 | 2007-12-13 | Fujitsu Ltd | Semiconductor device and manufacturing method therefor |
| JP2019057686A (en) * | 2017-09-22 | 2019-04-11 | 日本電気株式会社 | Electronic apparatus and junction method |
| CN114173658A (en) * | 2019-07-22 | 2022-03-11 | 株式会社村田制作所 | Oral cavity sensor |
-
1999
- 1999-02-17 JP JP11037954A patent/JP2000235990A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005069364A1 (en) * | 2004-01-13 | 2005-07-28 | Matsushita Electric Industrial Co., Ltd. | Mounted board, electronic component mounting method, electronic component, and wiring board |
| JP2007324278A (en) * | 2006-05-31 | 2007-12-13 | Fujitsu Ltd | Semiconductor device and manufacturing method therefor |
| JP2019057686A (en) * | 2017-09-22 | 2019-04-11 | 日本電気株式会社 | Electronic apparatus and junction method |
| CN114173658A (en) * | 2019-07-22 | 2022-03-11 | 株式会社村田制作所 | Oral cavity sensor |
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