JP2000228797A - Semiconductor electret capacitor microphone and case used for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To miniaturize a semiconductor electret capacitor microphone and to reduce the cost of the microphone by mounting a capacitor of a large capacitance, an inductor or a resistor in the inside of the semiconductor condenser microphone. SOLUTION: A case 300 contains an electroacoustic transducing element consisting of a semiconductor chip used for a semiconductor capacitor microphone and is formed by laminating 1st-8th ceramic layers 310-380, and a resistor, an inductor and a capacitor required to be electrically connected to the semiconductor chip are formed in each of the ceramics layers 310-380.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor electret condenser microphone using an electroacoustic transducer composed of a semiconductor chip, and a case used therein.

[0002]

2. Description of the Related Art A conventional semiconductor electret condenser microphone of this type is composed of a semiconductor chip on which necessary electronic circuits are formed and a case for housing the semiconductor chip. Since this semiconductor electret condenser microphone is used, for example, as a microphone of a mobile phone, there has been a strong demand for miniaturization.

[0003]

In a conventional semiconductor electret condenser microphone of this type, necessary electronic circuits such as an FET for impedance conversion, an amplifier circuit, and a noise canceling circuit are formed on a semiconductor chip. Since a large-capacity capacitor is required for the time constant circuit capacitor of the ALC circuit and the integration capacitor of the ADC circuit, it cannot be formed on a semiconductor chip. For this reason, a large-capacity capacitor or the like is provided on a printed circuit board on which a semiconductor electret condenser microphone is mounted. In addition, since a large-capacity inductor cannot be formed on a semiconductor chip, an inductor for noise suppression is generally provided on the printed circuit board. For this reason, in the conventional device, even if the semiconductor electret condenser microphone itself is miniaturized, it cannot meet the demand for miniaturization as a whole due to circuits and the like provided around it, and a certain level of cost reduction is required. There was a limit.

The present invention has been made in view of the above circumstances, and incorporates a large-capacity capacitor, inductor, or resistor inside a semiconductor electret condenser microphone to reduce the size and reduce the cost. It is intended to provide.

[0005]

A semiconductor electret condenser microphone according to the present invention accommodates an electroacoustic transducer in which an electret-treated polymer vibration film is integrated on a semiconductor chip on which necessary electronic circuits and the like are formed. The case is formed by laminating a plurality of ceramic layers, and each of the ceramic layers is formed with necessary resistors, inductors, and capacitors that are electrically connected to the semiconductor chip.

The case used in the semiconductor electret condenser microphone according to the present invention accommodates an electroacoustic transducer in which an electret-treated polymer vibration film is integrated on a semiconductor chip on which necessary electronic circuits and the like are formed. In this case, a plurality of ceramic layers are laminated, and necessary resistances, inductors, and capacitors that are electrically connected to the semiconductor chip are formed on each ceramic layer.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a drawing of a case main body constituting a case used for a semiconductor electret condenser microphone according to a first embodiment of the present invention, and FIG. 1A is a schematic plan view. (B) is a schematic front half sectional view, and (C) is a schematic side half sectional view.

FIG. 2 is a schematic plan view of an eighth layer of a case body constituting a case used in the semiconductor electret condenser microphone according to the first embodiment of the present invention, and FIG. FIG. 4 is a schematic plan view of a seventh layer of a case main body constituting a case used in the semiconductor electret condenser microphone according to the embodiment of the present invention. FIG. 4 is used in the semiconductor electret condenser microphone according to the first embodiment of the present invention. FIG. 5 is a schematic plan view of a sixth layer of a case body constituting the case, and FIG. 5 is a schematic diagram of a fifth layer of the case body constituting the case used in the semiconductor electret condenser microphone according to the first embodiment of the present invention. FIG. 6 is a plan view showing a semiconductor electret condenser microphone according to the first embodiment of the present invention. Fourth case body constituting the casing
FIG. 7 is a schematic plan view of a layer, FIG. 7 is a schematic plan view of a third layer of a case body constituting a case used in the semiconductor electret condenser microphone according to the first embodiment of the present invention, and FIG. FIG. 9 is a schematic plan view of a second layer of a case main body constituting a case used in the semiconductor electret condenser microphone according to the first embodiment. FIG. 9 illustrates a semiconductor electret condenser microphone according to the first embodiment of the present invention. FIG. 10 is a schematic bottom view of a first layer of a case main body constituting a case used, and FIG. 10 is a schematic cross-sectional view and a diagram of an electroacoustic transducer used in a semiconductor electret condenser microphone according to a first embodiment of the present invention. Reference numeral 11 denotes a case used for the semiconductor electret condenser microphone according to the first embodiment of the present invention. A case body that is a schematic cross-sectional view of a state accommodating the electroacoustic transducer.

FIG. 12 is a schematic plan view of a fifth layer of a case body constituting a case used for a semiconductor electret condenser microphone according to a second embodiment of the present invention, and FIG. FIG. 14 is a schematic plan view of a fourth layer of a case main body constituting a case used in the semiconductor electret condenser microphone according to the embodiment of the present invention. FIG. 14 is used for the semiconductor electret condenser microphone according to the second embodiment of the present invention. FIG. 1 is a schematic plan view of a third layer of a case body constituting the case, FIG.
FIG. 5 is a schematic plan view of a second layer of a case main body constituting a case used for the semiconductor electret condenser microphone according to the second embodiment of the present invention.

The symbols in parentheses in FIGS. 1 to 3 and 9 denote each part of the case body constituting the case used in the semiconductor electret condenser microphone according to the second embodiment of the present invention. Things.

First, a semiconductor chip 1 constituting an electroacoustic transducer 1000 used in a semiconductor electret condenser microphone according to a first embodiment of the present invention.
00 will be described. In this semiconductor chip 100,
Necessary electronic circuits 110 such as an FET for impedance conversion, an amplifier circuit, and a noise canceling circuit are formed by an ordinary method. Also, on the surface of the semiconductor chip 100,
An insulating layer 130 is stacked. Further, the insulating layer 1
An electrode layer 140 for a gate electrode made of aluminum or the like is laminated on the upper surface 30. Further, the electrode layer 1
An insulating film 150 made of TiN is laminated on 40.

The insulating film 150 is formed on the electrode layer 140
Is required when the electrode layer 140 has a low corrosion resistance such as aluminum, but when the electrode layer 140 is a high corrosion resistance such as a gold layer, it is particularly necessary to provide a layer corresponding to the insulating film 150. There is no. A substantially ring-shaped spacer layer 170 is formed on the insulating film 150.

The insulating layer 130, the electrode layer 140, and the insulating film 150 are not formed on the entire surface of the semiconductor chip 100, but are formed by exposing a part of the surface. The exposed portions are formed as electrode portions 191 connected to the conductor layers 372, 373, and 374 of the three case bodies 300A described later by the bonding wires 190.

The semiconductor chip 100 thus configured
Is formed as follows. First, necessary electronic circuits 110 are formed on a silicon wafer of 4 to 5 inches using a conventional method. For example, this semiconductor chip 100 is 2 mm
It is formed in the size of a corner. Further, the insulating layer 130, the electrode layer 140, the insulating film 150, and the spacer layer 170 are formed by an ordinary method.

The semiconductor chip 100 formed up to the spacer layer 170 in this manner is adhered to an adhesive sheet, and is diced with a cutter or the like in this state. Then, the adhesive sheet is divided into individual semiconductor chips 100 by being pulled outward. Thereafter, the individual semiconductor chips 100 are peeled off from the adhesive sheet and washed. The semiconductor chip 100 thus configured has a thickness of 0.1 mm.
It is a 3 mm 2 mm square.

The semiconductor chip 100 thus configured
Of the electroacoustic transducer 1 by integrating the vibrating membrane 200
000. The vibrating film 200 is formed by electret of a polymer FEP film having an electrode film formed on one surface. Specifically, the thickness is 5 μm to 12.5
An electrode film is formed by depositing nickel to a thickness of about 400 ° on the surface side of a μm polymer FEP film. Then, by applying other polarization treatments such as corona irradiation and EB irradiation on the side where the electrode film is not formed, that is, on the back side, the polymer FEP film is semipermanently charged with electric charges to be electret.

As an electrode film, aluminum can be evaporated to a thickness of about 400.degree. And an insulating coat made of polyimide or the like can be laminated to enhance environmental protection. Alternatively, aluminum and nickel may be deposited.

The vibration film 200 thus formed is attached to a conductive ring 230 in consideration of the conductivity of the vibration film 200 with the electrode film. As the ring 230, brass, stainless steel, or the like is suitable. When an insulating material is used for the ring 230, conductivity with the electrode film is secured by other means, for example, a bonding wire.

The above-described electroacoustic transducer 1000
Is an example, and it is a matter of course that the present invention is not limited to the above. In addition, the above-described semiconductor chip 100
Is an example, and the semiconductor chip 100 according to the present invention is described above.
Of course, the present invention is not limited to this. Further, the above-described vibration film 200 is merely an example, and the present invention is not limited to the above-described vibration film 200.

Next, a case used in the semiconductor electret condenser microphone according to the first embodiment of the present invention will be described. This case includes first to eighth ceramic layers 310 to 380 and a lid (not shown). The ceramic layer 310
Case body 300A in the form of a substantially square shape in which the layers 380 to 380 are stacked.
Have two recesses 300a, 3
00b, 300c, and 300d are formed in parallel in the vertical direction. In addition, the lid is the case body 300A.
To cover the concave portions.

The first to eighth ceramic layers 31
Nos. 0 to 380 are made of ceramic sheets, and are fired in a stacked state to form a case main body 300A.

First, the first ceramic layer 310 is
FIG. 9 shows a portion corresponding to the bottom in this case.
As shown in FIG. 3, four recesses 310a, 310b, 310c, 31 forming a part of the recesses 300a, 300b, 300c, 300d are formed in a substantially square shape.
0d is formed. This first ceramic layer 3
10 from the side surface to the bottom surface, the recesses 310a, 31
0b, 310c, 310d and four electrode portions 311
a, 311b, 311c and 311d are formed.
The electrode portions 311a, 311b, 311c, 311d
Is a portion that is electrically connected to the printed board when the semiconductor electret condenser microphone is mounted on a printed board or the like (not shown).

As shown in FIG. 8, the second ceramic layer 320 laminated on the first ceramic layer 310 is formed in a substantially square shape and has the concave portions 300a, 300b, 300c, Four recesses 320a, 320b, 320c, 320d that form part of 300d
Are formed. A spiral conductor layer 321 is formed on the surface of the second ceramic layer 320. The central portion of the conductor layer 321 is a substantially circular land 322 for connecting to a conductor layer 331 of a third ceramic layer 330 described later. Also,
The end of the conductor layer 321 reaches a recess 320d that forms a part of the recess 300d. Therefore, the conductor layer 321 is electrically connected to the electrode portion 311c. The recesses 320a, 320b, 320
A conductor layer is formed on c and 320d.

As shown in FIG. 7, the third ceramic layer 330 laminated on the second ceramic layer 320 is formed in a substantially square shape and has the concave portions 300a, 300b, 300c, Four recesses 330a, 330b, 330c, 330d that form part of 300d
Are formed. Further, a spiral conductor layer 331 is formed on the surface side of the third ceramic layer 330. In the center of the conductor layer 331, a through hole 3 for electrically connecting to the conductor layer 321 is provided.
32 have been established. The terminal of the conductor layer 331 is connected to the conductor layer 3 of a fourth ceramic layer 340 described later.
A substantially circular land 333 to be connected to the lands 41 is formed. The recesses 330a, 330b, 330c,
A conductor layer is formed on 330d.

As shown in FIG. 6, the fourth ceramic layer 340 laminated on the third ceramic layer 330 is formed in a substantially square shape and has the concave portions 300a, 300b, 300c, Four recesses 340a, 340b, 340c, 340d forming part of 300d
Are formed. A spiral conductor layer 341 is formed on the surface of the fourth ceramic layer 340. The center of the conductor layer 341 is a substantially circular land 342 for connection with a conductor 351 of a fifth ceramic layer 350 described later. The terminal of the conductor layer 341 is connected to the through hole 3 for connection with the conductor layer 331 of the third ceramic layer 330.
43. The recesses 340a, 340
On b, 340c and 340d, a conductor layer is formed.

The fifth ceramic layer 350 laminated on the fourth ceramic layer 340 is formed in a substantially square shape as shown in FIG. 5, and has the concave portions 300a, 300b, 300c, Four recesses 350a, 350b, 350c, 350d that form part of 300d
Are formed. A spiral conductor layer 351 is formed on the fifth ceramic layer 350. At the center of the conductor layer 351, the conductor layer 34
A through-hole 352 for electrically connecting to No. 1 is provided. The end of the conductor layer 351 reaches a recess 350d forming the recess 300d. The recesses 350a, 350b, 350c, 350d
Is formed with a conductor layer.

The first to fifth ceramic layers 310 to 350 are composed of the conductor layers 311, 321 and 33.
Except for 1, 341 and 351, they are formed in the same shape and the same size.

The sixth ceramic layer 360 laminated on the fifth ceramic layer 350 is formed in a substantially square shape as shown in FIG.
Forming part of Oa, 300b, 300c, 300d 4
Three recesses 360a, 360b, 360c and 360d are formed. A central conductor layer 361 is formed on the surface of the sixth ceramic layer 360, and the corners and recesses 360a, 36a of the sixth ceramic layer 360 are formed.
0b.

The seventh ceramic layer 370 laminated on the sixth ceramic layer 360 has an opening 371 at the center as shown in FIG. Recesses 300a, 300b, 300
c, four recesses 370a, 370b forming 300d,
370c and 370d are formed. The seventh ceramic layer 370 has the same outer shape and the same size as the first to fifth ceramic layers 310 to 350.

The seventh ceramic layer 370
Are formed on the front surface side of the substrate with three conductor layers 372, 373, and 374. The conductor layer 372 is continuous with one of the corners of the seventh ceramic layer 370. The conductor layer 373 is connected to the recess 370d, and the conductor layer 374 is connected to the recess 370c. The conductor layer 3
A land 372A to which a through hole 383 of an eighth ceramic layer 380 to be described later is connected is formed in 72.

Further, the seventh ceramic layer 37
The ceramic layer 380 of the eighth layer laminated on the first
As shown in the figure, four recesses 380a, 380b, 380c, and 38 are formed in a substantially square shape and form a part of the recesses 300a, 300b, 300c, and 300d.
0d is formed. The eighth ceramic layer 380 has an opening 381 at the center, and thus is formed in a substantially rectangular shape. The opening 381 is larger than the opening 371 of the seventh ceramic layer 370. When the opening 381 is laminated on the seventh ceramic layer 370, the opening 3
A part of the three conductor layers 372, 373, and 374 is viewed from 81. In FIG. 3, the seventh ceramic layer 370 of the opening 381 is indicated by a two-dot chain line L.
The position with respect to is shown.

The conductor layer 382 is formed on the entire surface of the eighth ceramic layer 380 thus configured. The conductor layer 382 does not extend to the side surface of the eighth ceramic layer 380.

The eighth ceramic layer 380
The land 37 of the seventh ceramic layer 370
A through hole 383 connected to 2A is opened. Therefore, the conductor layer 382 is electrically connected to the conductor layer 372 through the through hole 383.

The first to eighth ceramic layers 310 to 380 are laminated to form the case body 300A.
Is formed. The recess of the case body 300A is
This is composed of an opening 371 of the ceramic layer 370 of the layer and an opening 381 of the ceramic layer 380 of the eighth layer. The electroacoustic transducer 1000 is housed in the above-described recess.

First to eighth ceramic layers 310 to 310
By stacking and firing 380, case body 300A
Is formed. In the case body 300A, the conductor layer 351 of the fifth ceramic layer 350, the conductor layer 341 of the fourth ceramic layer 340, the conductor layer 331 of the third ceramic layer 330, and the second ceramic layer Since the conductor layer 321 of the layer 320 is electrically connected,
These function as one inductor. In this inductor, one electrode is located in the depression 350d of the fifth ceramic layer 350, and the other electrode is located in the depression 320c of the second ceramic layer 320.

Here, since the conductor layer 373 of the seventh ceramic layer 370 is connected to the recess 370d,
The inductor will be connected to the conductor layer 373. Accordingly, the electrode portion 191 of the semiconductor chip 100 constituting the electro-acoustic transducer 1000 housed in the case body 300A is connected to the conductor layer 373 by the bonding wire 190, thereby forming the electro-acoustic transducer 1000. A large-sized inductor that cannot be formed in the semiconductor device 100 can be built in the semiconductor electret condenser microphone.

In the first embodiment described above, the type in which an inductor is provided is used.
The resistors 341, 331, and 321 can also constitute a resistor. Also in this case, the electroacoustic transducer 1000
Can be built into the semiconductor electret condenser microphone so large that it cannot be formed on the semiconductor chip 100 constituting the semiconductor chip.

Next, a case where a capacitor is incorporated will be described. The electro-acoustic transducer 1000 used in this semiconductor electret condenser microphone is the same as that described above, and a detailed description is omitted. Further, the case body 400A of the case used for the semiconductor electret condenser microphone is constituted by 8
Among the ceramic layers 410 to 480, the first ceramic layer 410, the sixth ceramic layer 460,
The seventh ceramic layer 470 and the eighth ceramic layer 480 are the same as those in the case body 300A described above. Therefore, the detailed description thereof will be omitted, and the same parts as the semiconductor electret condenser microphone according to the first embodiment will be described with reference to the drawings of the semiconductor electret condenser microphone, that is, FIGS. 1 to 3 and 9. , The same reference numerals are used.

In this semiconductor electret condenser microphone, a concave portion 400a of a case body 400A,
Four recesses 420a, 420b, 420c, 420d that form part of 400b, 400c, 400d are formed. The conductor layer 421 is formed on the second ceramic layer 420.

The second ceramic layer 420
As shown in FIG. 14, the third ceramic layer 430 laminated on is formed in a substantially square shape.
Recesses 400a, 400b, 400 of case body 400A
c, four recesses 430a, 43 forming part of 400d
0b, 430c, and 430d are formed. The conductor layer 431 is formed on the third ceramic layer 430.

Also, the third ceramic layer 430
As shown in FIG. 13, the fourth ceramic layer 440 laminated on is formed in a substantially square shape.
Recesses 400a, 400b, 400 of case body 400A
c, four recesses 440a, 44 forming part of 400d
0b, 440c and 440d are formed. The conductor layer 441 is formed on the fourth ceramic layer 440.

Further, the fourth ceramic layer 44
The fifth ceramic layer 450 laminated on the first ceramic layer 0
As shown in FIG. 12, while being formed in a substantially square shape, the concave portions 400a, 400b, 4
00c, four recesses 450a forming part of 400d,
450b, 450c, and 450d are formed. The fifth ceramic layer 450 includes a conductor layer 4
51 are formed.

Conductor layer 4 of fifth ceramic layer 450
51 and the conductor layer 431 of the third ceramic layer 430
Are electrically connected to each other by the concave portion 400d.
Also, the conductor layer 441 of the fourth ceramic layer 440
And the conductor layer 421 of the second ceramic layer 420 are electrically connected by the concave portion 400c. Therefore, a capacitor having a laminated structure is formed between the fifth ceramic layer 450 and the second ceramic layer 420.

One concave portion 400c is formed in the second ceramic layer 420 conductor layer 474, and the other concave portion 400d is formed in the second ceramic layer 420 conductor layer 474.
Each of the ceramic layers 420 is connected to the conductor layer 473. Therefore, the capacitor is
c and the concave portion 400d, that is, the electrode portions 411c and 4d.
11d is connected in parallel.

In the above two embodiments, an inductor is used as an inductor and a capacitor is used as a capacitor. However, by appropriately selecting a ceramic layer to be laminated, an inductor and a capacitor or a resistor can be incorporated at the same time. Of course.

[0046]

The semiconductor electret condenser microphone according to the present invention has a case for accommodating an electroacoustic transducer in which an electret-treated polymer vibration film is integrated on a semiconductor chip on which necessary electronic circuits and the like are formed. The case is formed by laminating a plurality of ceramic layers, and necessary resistances, inductors, and capacitors that are electrically connected to the semiconductor chip are formed on each of the ceramic layers.

As described above, it is possible to form a resistor, an inductor, and a capacitor necessary for the ceramic layer constituting the case, so that a large-capacity capacitor such as a capacitor for a time constant circuit of an ALC circuit or a capacitor for integration of an ADC circuit can be obtained. Capacitors and large-capacity inductors for noise suppression can be incorporated without increasing the size of the semiconductor electret condenser microphone itself, so that demands for miniaturization can be met. Further, since there is no need to mount a capacitor or the like externally, it is possible to meet a request for cost reduction.

Further, the inductor is formed by connecting conductor layers formed on a plurality of ceramic layers. Further, the capacitor is composed of a conductor layer formed on a plurality of ceramic layers and a ceramic layer between them. Therefore, a large-capacity capacitor or the like can be formed only by laminating the ceramic layers.

On the other hand, the case used in the semiconductor electret condenser microphone according to the present invention accommodates an electroacoustic transducer in which an electret-treated polymer vibration film is integrated on a semiconductor chip on which necessary electronic circuits and the like are formed. In this case, a plurality of ceramic layers are laminated, and necessary resistances, inductors, and capacitors that are electrically connected to the semiconductor chip are formed on each ceramic layer.

Further, the inductor is formed by connecting conductor layers formed on a plurality of ceramic layers, and the capacitor is formed from a conductor layer formed on the plurality of ceramic layers and a ceramic layer therebetween. So
By simply laminating the ceramic layers, a large-capacity capacitor or the like can be formed.

[Brief description of the drawings]

FIG. 1 is a drawing of a case body constituting a case used for a semiconductor electret condenser microphone according to a first embodiment of the present invention, wherein FIG. 1A is a schematic plan view and FIG. Is a schematic front half sectional view, and FIG. 2C is a schematic side half sectional view.

FIG. 2 is a schematic plan view of an eighth layer of a case main body constituting a case used for the semiconductor electret condenser microphone according to the first embodiment of the present invention.

FIG. 3 is a schematic plan view of a seventh layer of a case main body constituting a case used for the semiconductor electret condenser microphone according to the first embodiment of the present invention.

FIG. 4 is a schematic plan view of a sixth layer of a case main body constituting a case used for the semiconductor electret condenser microphone according to the first embodiment of the present invention.

FIG. 5 is a schematic plan view of a fifth layer of a case main body constituting a case used for the semiconductor electret condenser microphone according to the first embodiment of the present invention.

FIG. 6 is a schematic plan view of a fourth layer of a case main body constituting a case used for the semiconductor electret condenser microphone according to the first embodiment of the present invention.

FIG. 7 is a schematic plan view of a third layer of a case main body constituting a case used for the semiconductor electret condenser microphone according to the first embodiment of the present invention.

FIG. 8 is a schematic plan view of a second layer of a case main body constituting a case used for the semiconductor electret condenser microphone according to the first embodiment of the present invention.

FIG. 9 is a schematic bottom view of a first layer of a case main body constituting a case used for the semiconductor electret condenser microphone according to the first embodiment of the present invention.

FIG. 10 is a schematic sectional view of an electroacoustic transducer used in the semiconductor electret condenser microphone according to the first embodiment of the present invention.

FIG. 11 is a schematic cross-sectional view showing a state where the electroacoustic transducer is housed in a case main body constituting a case used for the semiconductor electret condenser microphone according to the first embodiment of the present invention.

FIG. 12 is a schematic plan view of a fifth layer of a case main body constituting a case used for the semiconductor electret condenser microphone according to the second embodiment of the present invention.

FIG. 13 is a schematic plan view of a fourth layer of a case main body constituting a case used for the semiconductor electret condenser microphone according to the second embodiment of the present invention.

FIG. 14 is a schematic plan view of a third layer of a case main body constituting a case used for the semiconductor electret condenser microphone according to the second embodiment of the present invention.

FIG. 15 is a schematic plan view of a second layer of a case main body constituting a case used for the semiconductor electret condenser microphone according to the second embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 1000 electroacoustic transducer 100 semiconductor chip 110 (necessary electronic circuit) 200 vibrating membrane 300 case 310 to 380 first to eighth ceramic layers

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Toshinori Matsuwaka 1810 Takagi-cho, Kawauchi-shi, Kagoshima Kyocera Co., Ltd. Inside the Kawauchi Plant (72) Inventor Yoshiaki Obayashi 1-4-33 Kitakyuho-ji, Yao-shi, Osaka Hosiden shares In-company (72) Inventor: Mamoru Yasuda 1-43-33 Kitakyuho-ji Temple, Yao-shi, Osaka Ho-Siden Corporation (72) Inventor Shuji Osawa 1-4-33 Kitakyuho-ji Temple, Yao-shi, Osaka In Hosiden Corporation F term (reference) 5D021 CC03 CC12 CC15

Claims (6)

[Claims] 1. A case for accommodating an electroacoustic transducer in which an electret-treated polymer vibration film is integrated on a semiconductor chip on which necessary electronic circuits and the like are formed. A semiconductor electret condenser microphone comprising a stack of ceramic layers, each of which is provided with necessary resistors, inductors, and capacitors electrically connected to the semiconductor chip. 2. The semiconductor electret condenser microphone according to claim 1, wherein the inductor is formed by connecting conductor layers formed on a plurality of ceramic layers. 3. The semiconductor electret condenser microphone according to claim 1, wherein said capacitor comprises a conductor layer formed on a plurality of ceramic layers and a ceramic layer interposed therebetween. 4. A case for housing an electroacoustic transducer in which an electret-treated polymer vibration film is integrated on a semiconductor chip on which necessary electronic circuits and the like are formed, wherein a plurality of ceramic layers are laminated. Required resistance to be electrically connected to the semiconductor chip in each ceramic layer,
A case used for a semiconductor electret condenser microphone, wherein an inductor and a capacitor are formed. 5. The case used in a semiconductor electret condenser microphone according to claim 4, wherein said inductor is formed by connecting conductor layers formed on a plurality of ceramic layers. 6. The case used for a semiconductor electret condenser microphone according to claim 4, wherein said capacitor is composed of a conductor layer formed on a plurality of ceramic layers and a ceramic layer between them.