JP2000228160A - Conductive antireflection film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a conductive antireflection film having superior capability about reflection reduction, antistatic and electromagnetic wave shield and heat resistance. SOLUTION: When there are called a first layer, a second layer and a third layer from a base side respectively in this conductive antireflection film, the first layer is a layer with transition metals as main component and has geometric thickness of 0.5-200 nm, and the second layer is a layer with aluminum nitride and silicon nitride as main component and has geometric thickness of 1-30 nm, and the third layer is made of silicon oxide and has geometric thickness of 70-120 nm.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive anti-reflection film, and more particularly to a conductive anti-reflection film suitable for forming on the front surface of a cathode ray tube panel which is subjected to a heat treatment at 400 DEG C. or more after film formation. It is.

[0002]

2. Description of the Related Art Heretofore, there has been a demand for reducing reflection and preventing static electricity on the front surface of a panel, which is a display surface of a cathode ray tube. Recently, it has also been required to block an extremely low frequency electromagnetic wave which adversely affects the human body. It is becoming possible.

[0003] Therefore, by forming various multilayer films on the front surface of the panel of the cathode ray tube, it is possible to reduce the reflection,
Attempts have been made to provide antistatic and electromagnetic wave shielding functions, and multilayer films using oxides and nitrides have been proposed as conductive antireflection films that satisfy these characteristics.

Conventionally proposed conductive anti-reflection coating
And excellent reflection reduction ability, specifically, 0.5% or less
As a material having a sensitive reflectance, SiO 2_Two, TiO_Two, S
nO _TwoThere is a multilayer film consisting of layers such as
Since the total number of films is as large as 4 to 7 layers, the production cost is high.
Problem.

In recent years, a multilayer film including an absorption film made of nitride and having a reduced total number of films has been proposed. For example, Japanese Patent Application Laid-Open No. 6-510382 discloses that a multilayer film contains niobium nitride in order from the substrate side. A layer, a layer comprising titanium dioxide,
A conductive anti-reflective coating comprising a layer containing silicon dioxide has been proposed.

Japanese Patent Application Laid-Open No. 9-156964 discloses that
In order from the substrate side, there has been proposed a conductive anti-reflection film comprising a layer mainly composed of a nitride of a metal selected from titanium, zirconia and hafnium, and a silica layer.

[0007]

By the way, in the case of a cathode ray tube, after a film is formed on a panel serving as a base, a frit sealing step with a funnel and an exhausting step are present, and a heat treatment at 400 ° C. or more is performed in these steps. Is done.

However, the conductive anti-reflection film disclosed in Japanese Patent Application Laid-Open No. 6-510382 and Japanese Patent Application Laid-Open No. 9-156964 has insufficient heat resistance.
When heated at a high temperature of 0 ° C. or higher, there is a disadvantage that the reflection characteristics and the resistance value of the film are liable to change greatly.

It is an object of the present invention to provide a conductive anti-reflection film having excellent performance in reducing reflection, preventing electrification, shielding electromagnetic waves and having excellent heat resistance even when the total number of films is three. It is.

[0010]

The conductive anti-reflection film of the present invention includes three layers formed on a substrate, and when referred to as a first, second, and third layers in order from the substrate side, a first The first layer is a layer mainly composed of a transition metal nitride and has a geometric thickness of 0.5 to 200 nm, and the second layer is mainly composed of aluminum nitride and silicon nitride. 1-30n
m, and the third layer is a layer of silicon oxide and has a geometric thickness of 70 to 120 nm.

The conductive antireflection film of the present invention is characterized in that the first layer mainly composed of a transition metal oxide is a layer mainly composed of a nitride of titanium. Is characterized in that the layer containing nitride as a main component is a layer containing oxygen whose atomic ratio to titanium is 0.5 or less.

[0012]

According to the present invention, the first substrate formed closest to the substrate is used.
The layer having a transition metal nitride as a main component, which is a layer having a function of imparting low reflection and conductivity.

As the first layer, a film containing a nitride of a metal selected from titanium, zirconium and hafnium as a main component can be used. This is preferable because the low reflection area in the light area is widened. When a film containing a nitride of titanium as a main component is used, the atomic ratio of nitrogen to titanium in the film is preferably 0.75 to 1.30 from the viewpoint of preventing reflection. When oxygen is contained in this film so that the atomic ratio to titanium is 0.5 or less,
It is preferable because conductivity is further improved.

The second layer, which is mainly composed of aluminum nitride and silicon nitride, has a function of imparting heat resistance. The ratio of the nitride of aluminum and the nitride of silicon is such that the atomic ratio of Al and Si is 1:
The ratio may be 9 to 9: 1.

Although the heat resistance of the multilayer film is improved by using a layer made of only silicon nitride as the second layer, the above-mentioned composite layer made of aluminum nitride and silicon nitride can be used. In this case, the effect of improving the heat resistance of the multilayer film becomes greater.
Heat resistance superior to that of the multilayer film disclosed in Japanese Patent Application Laid-Open No. 510382 and Japanese Patent Application Laid-Open No. 9-156964 can be obtained.

The silicon oxide layer serving as the third layer has an effect of providing antireflection.

[0017] In the present invention, the first to the first as described above.
In addition to the third film layer, an additional thin film layer may be appropriately provided for the purpose of improving the adhesion of the film or adjusting the color tone.

As a method for forming the conductive anti-reflection film of the present invention, general thin film forming means can be used. For example, a sputtering method, a vacuum evaporation method, a CVD method, a spin coating method, a sol-gel method, and the like can be applied.However, considering that the area can be easily increased and the film thickness can be easily controlled,
Sputtering is most preferred.

[0019]

EXAMPLES Hereinafter, the conductive antireflection film of the present invention will be described in detail with reference to examples.

Table 1 shows the conductive anti-reflection coatings of the examples (Sample Nos. 1 and 2) and the conductive anti-reflection coatings of the comparative example (Sample N).
o. 3) is shown. In addition, sample No. The second layers 1 and 2 have an atomic ratio of Al and Si of 2: 8,
It is a mixture of AlN and Si ₃ N ₄ .

[0021]

[Table 1]

The conductive antireflection films in the table were prepared as follows.

First, a cathode ray tube panel glass having a size of 17 inches was prepared, and a conductive antireflection film having a three-layer structure as shown in the table was formed on the front surface thereof by using a magnetron sputter coater. In the column of the film configuration in the table, the material of each film layer and the geometric thickness are shown.

Each of the samples thus obtained was placed in a box-type electric furnace, and heat-treated at 450 ° C. for 60 minutes.

As a result, in Example No. Nos. 1 and 2 are comparative examples. Sample No. 3 showed a large change in the reflectance after the heat treatment and a large change in the resistance value as compared to before the heat treatment.

The reflectivity in the table is obtained by measuring 15 ° regular reflection using an instantaneous multi-reflectance measuring device.

The resistance value is obtained by attaching an electrode to the center of the panel on the short side by ultrasonic soldering and measuring the resistance between the electrodes with a tester.

[0028]

As described above, the conductive anti-reflection film of the present invention has excellent ability to reduce reflection, prevent electrification, shield electromagnetic waves, and has excellent heat resistance even if the total number of films is three. Therefore, it is suitable as a conductive antireflection film formed on a cathode ray tube panel. In addition, the present invention can be applied to various displays such as a liquid crystal display substrate and a plasma display substrate which are subjected to a high-temperature heat treatment after film formation.

Continuation of the front page F term (reference) 2K009 AA06 BB02 CC02 CC03 DD04 EE03 5C032 AA02 DD02 DE01 DE03 DF01 DF03 DF05 DG01 DG02

Claims (3)

[Claims] 1. A semiconductor device comprising three layers formed on a substrate, which are referred to as first, second, and third layers in order from the substrate side, wherein the first layer is mainly composed of a transition metal nitride. 0.5-20 in layers
The second layer has a geometric thickness of 0 nm and is mainly composed of aluminum nitride and silicon nitride.
A conductive anti-reflective coating having a geometric thickness of ３０30 nm, wherein the third layer is a layer of silicon oxide and having a geometric thickness of 70-120 nm. 2. The conductive antireflection film according to claim 1, wherein the first layer mainly composed of a transition metal nitride is a layer mainly composed of a nitride of titanium. 3. The conductive anti-reflection film according to claim 2, wherein the layer containing titanium nitride as a main component is a layer containing oxygen having an atomic ratio to titanium of 0.5 or less.