JP2000216530A - Connection structure of electronic circuit device - Google Patents

Connection structure of electronic circuit device

Info

Publication number
JP2000216530A
JP2000216530A JP11016625A JP1662599A JP2000216530A JP 2000216530 A JP2000216530 A JP 2000216530A JP 11016625 A JP11016625 A JP 11016625A JP 1662599 A JP1662599 A JP 1662599A JP 2000216530 A JP2000216530 A JP 2000216530A
Authority
JP
Japan
Prior art keywords
solder
circuit device
electronic circuit
bump
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11016625A
Other languages
Japanese (ja)
Inventor
Shiro Yamashita
志郎 山下
Masahide Harada
正英 原田
Toru Nishikawa
徹 西川
Kaoru Katayama
薫 片山
Takeshi Miitsu
健 三井津
Mitsugi Shirai
貢 白井
Takeshi Takahashi
高橋  毅
Hidekazu Kiryu
英一 桐生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11016625A priority Critical patent/JP2000216530A/en
Publication of JP2000216530A publication Critical patent/JP2000216530A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

Landscapes

  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To form reflowed solder like a smooth fillet to reduce the stress/strain in solder during operating of an electronic circuit device and improve the thermal fatigue life by adjusting the quantity of a solder paste at a board and making the pad diameter at the board larger than the bump diameter of an LSI chip. SOLUTION: Many bumps are provided on an electronic circuit device, pads 4 having a larger diameter than that of Au bumps formed on Al electrodes are formed at a board, Sn37Pb paste 2A is printed on the board and positioned so that bumps of an LSI are on Sn37Pb, heated to reflow, thereby forming Sn37Pb like a fillet smooth enough to avoid cracking, the solder quantity may be adjusted to form it like a smooth fillet, or pads 4 having a larger diameter than that of Pb3Sn bump 1B formed on Al electrodes are formed at the board and the same operation may be made.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は大型計算機のLSI実
装において、そのLSIの長期接続信頼性に関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the long-term connection reliability of large-scale computers in LSI implementation.

【0002】[0002]

【従来の技術】高密度化、高集積化の要求に対し、基板
にLSIの電子部品を搭載するフリップチップ接続が有効
であるが、LSIを耐熱性のないプリント基板等に実装す
る場合、低温での接合が必要となる。従来、図1のよう
にSn-Pb系の高融点はんだバンプあるいはAuバンプに対
し低温でフリップチップ接続する場合、Sn-Pb系の低融
点はんだペーストを基板側に印刷し、その低融点はんだ
の溶融する温度でリフローして接続を行っていた。
2. Description of the Related Art In response to demands for higher density and higher integration, flip-chip connection, in which LSI electronic components are mounted on a board, is effective. Bonding is required. Conventionally, as shown in Fig. 1, when performing flip-chip connection at a low temperature to a Sn-Pb-based high melting point solder bump or Au bump, a Sn-Pb-based low melting point solder paste is printed on the substrate side and the low melting point solder The connection was performed by reflowing at a temperature at which the resin melted.

【0003】この例は、例えば1993年Electronic Compo
nents and Technology ConfefenceProceedings 182pp〜
186ppに示されている。また、例えば特開平5-304156号
公報では導電性の金属コアのまわりにはんだ層のあるバ
ンプ構造を示しており、接続時の電極のつぶれによる短
絡を防ぎ、複数回の搭載に耐え、電極形成後に非破壊の
電気的特性の測定ができるなどの利点があることを示し
ている。
[0003] This example is described in, for example, Electronic Compo in 1993.
nents and Technology ConfefenceProceedings 182pp ~
186 pp. In addition, for example, Japanese Patent Application Laid-Open No. 5-304156 shows a bump structure having a solder layer around a conductive metal core, prevents a short circuit due to crushing of an electrode at the time of connection, withstands mounting a plurality of times, and forms an electrode. This shows that there is an advantage that non-destructive electrical characteristics can be measured later.

【0004】しかし、このとき接合後のバンプ形状は通
常樽状になっており、この形状では実稼働時、はんだ/
基板界面近傍でクラックが発生しやすくなっている。
[0004] However, at this time, the bump shape after bonding is usually a barrel shape.
Cracks are likely to occur near the substrate interface.

【0005】[0005]

【発明が解決しようとする課題】LSIチップを耐熱性の
ないプリント基板等に低温でフリップチップ実装する場
合、そのLSIの長期接続信頼性が問題となっている。上
述した従来の方法では基板上に低融点のはんだペースト
を印刷し、その上にLSIを供給し、加熱リフローしなけ
ればならないが、接続後のバンプ形状がクラックの発生
しやすい樽状になる問題点がある。
When an LSI chip is flip-chip mounted at low temperature on a printed circuit board or the like having no heat resistance, the long-term connection reliability of the LSI is a problem. In the above-mentioned conventional method, it is necessary to print a low-melting-point solder paste on a substrate, supply LSI on top of it, and heat and reflow.However, the bump shape after connection becomes a barrel-like shape where cracks easily occur. There is a point.

【0006】[0006]

【課題を解決するための手段】長期接続信頼性を確保す
る手段として、基板側のはんだフィレットを樽状ではな
く、なだらかな形状にすることにより応力ひずみを低減
させる。この為には基板側のはんだペーストの量を調整
したり、基板側パッド径をLSIチップのバンプ径より大
きくすることにより、リフロー後のはんだをなだらかな
フィレット状となるようにする。より好ましくは、基板
側の接続パッド径を電子部品の金属バンプ径の1.5〜2.0
倍に設定する。この場合、接続高さはLSI側に形成され
たバンプ高さとなる。
As a means for ensuring long-term connection reliability, stress distortion is reduced by making the solder fillet on the substrate side smooth rather than barrel-shaped. For this purpose, the amount of solder paste on the substrate side is adjusted, or the pad diameter on the substrate side is made larger than the bump diameter of the LSI chip, so that the solder after reflow has a smooth fillet shape. More preferably, the connection pad diameter on the substrate side is 1.5 to 2.0 of the metal bump diameter of the electronic component.
Set to double. In this case, the connection height is the height of the bump formed on the LSI side.

【0007】[0007]

【発明の実施の形態】(実施形態1)図2は本発明にお
ける接続後の1つのバンプに対しての構造断面図であ
る。本発明での電子回路装置は図2のようなバンプを多
数所有している。Al電極上に形成されたAuバンプに対
し、このバンプ径よりも大きな径を持つパッドを基板側
に作成し、Sn37Pbペーストを基板上に印刷しLSIのバン
プがSn37Pb上になるように位置決め後、加熱リフローす
ることにより、Sn37Pbをクラックの発生しにくいなだら
かなフィレット状となるように形成させる。また、はん
だ量を調整することにより、図3のような構造を得るこ
ともできる。次にこの構造が信頼性を向上させているか
という検証実験を行った。
(Embodiment 1) FIG. 2 is a structural sectional view showing one bump after connection in the present invention. The electronic circuit device according to the present invention has many bumps as shown in FIG. For the Au bump formed on the Al electrode, create a pad with a diameter larger than this bump diameter on the substrate side, print Sn37Pb paste on the substrate and position it so that the LSI bump is on Sn37Pb, By heating and reflowing, Sn37Pb is formed so as to have a smooth fillet shape in which cracks are less likely to occur. Further, by adjusting the amount of solder, a structure as shown in FIG. 3 can be obtained. Next, a verification experiment was performed to determine whether the structure improved reliability.

【0008】電子回路装置は□15mm、厚さ0.5minであ
り、これに0.35mmピッチ、0.12mm径の金属バンプを備え
ている。テスト基板はムライト製□150mm、厚さ5mm、0.
18mmのパッド径のものを使用した。このとき、パッド径
はバンプ径の1.5倍となっており、このときのフィレッ
トはパッド面とフィレットのなす角約20゜となってい
る。比較のために従来構造でのTPにおいても実験し、-5
5/150℃、3∞/hの温度サイクル試験をTP各5個ずつ行っ
た。このとき従来構造は1000∞ですべてのTPに断線が出
たが、本構造は断線しなかった。これで本構造の効果が
検証された。
The electronic circuit device has a size of 15 mm and a thickness of 0.5 min, and is provided with metal bumps having a pitch of 0.35 mm and a diameter of 0.12 mm. The test board is made of Mullite 150mm, thickness 5mm, 0.
A pad diameter of 18 mm was used. At this time, the pad diameter is 1.5 times the bump diameter, and the fillet at this time has an angle of about 20 ° between the pad surface and the fillet. For comparison, we also experimented with TP with the conventional structure, and
A temperature cycle test of 5/150 ° C and 3∞ / h was performed for each five TPs. At this time, all the TPs broke at 1000 mm in the conventional structure, but this structure did not break. Thus, the effect of this structure was verified.

【0009】(実施形態2)図4は本発明における接続
後の1つのバンプに対しての構造断面図である。本発明
での電子回路装置は図4のようなバンプを多数所有して
いる。Al電極上に形成されたPb3Snバンプに対し、この
バンプ径よりも大きな径を持つパッドを基板側に作成
し、Sn37Pbペーストを基板上に印刷しLSIのバンプがSn3
7Pb上になるように位置決め後、加熱リフローすること
により、Sn37Pbをクラックの発生しにくいなだらかなフ
ィレット状となるように形成させる。また、はんだ量を
調整することにより、図5のような構造を得ることもで
きる。次にこの構造が信頼性を向上させているかという
検証実験を行った。
(Embodiment 2) FIG. 4 is a structural sectional view of one bump after connection in the present invention. The electronic circuit device according to the present invention has many bumps as shown in FIG. For the Pb3Sn bump formed on the Al electrode, a pad with a diameter larger than this bump diameter is created on the substrate side, Sn37Pb paste is printed on the substrate, and the LSI bump becomes Sn3
After positioning so as to be on 7Pb, Sn37Pb is formed into a gentle fillet shape in which cracks are less likely to occur by heating and reflowing. Further, the structure as shown in FIG. 5 can be obtained by adjusting the amount of solder. Next, a verification experiment was performed to determine whether the structure improved reliability.

【0010】電子回路装置は□15mm、厚さ0.5minであ
り、これに0.35mmピッチ、0.12mm径の金属バンプを備え
ている。テスト基板はムライト製□150mm、厚さ5mm、0.
18mmのパッド径のものを使用した。このとき、パッド径
はバンプ径の1.5倍となっており、このときのフィレッ
トはパッド面とフィレットのなす角約20゜となってい
る。比較のために従来構造でのTPにおいても実験し、-5
5/150℃、3∞/hの温度サイクル試験をTP各5個ずつ行っ
た。このとき従来構造は1000∞ですべてのTPに断線が出
たが、本構造は断線しなかった。これで本構造の効果が
検証された。
The electronic circuit device has a size of 15 mm and a thickness of 0.5 min, and is provided with metal bumps having a pitch of 0.35 mm and a diameter of 0.12 mm. The test board is made of Mullite 150mm, thickness 5mm, 0.
A pad diameter of 18 mm was used. At this time, the pad diameter is 1.5 times the bump diameter, and the fillet at this time has an angle of about 20 ° between the pad surface and the fillet. For comparison, we also experimented with TP with the conventional structure, and
A temperature cycle test of 5/150 ° C and 3∞ / h was performed for each five TPs. At this time, all the TPs broke at 1000 mm in the conventional structure, but this structure did not break. Thus, the effect of this structure was verified.

【0011】(実施形態3)図6は本発明における接続
後の1つのバンプに対しての構造断面図である。本発明
での電子回路装置は図6のようなバンプを多数所有して
いる。Al電極上に形成されたAuバンプに対し、このバン
プ径よりも大きな径を持つパッドを基板側に作成し、Sn
-Ag-Bi系Pbフリーはんだを基板上に印刷しLSIのバンプ
がSn37Pb上になるように位置決め後、加熱リフローする
ことにより、Sn37Pbをクラックの発生しにくいなだらか
なフィレット状となるように形成させる。また、はんだ
量を調整することにより、図7のような構造を得ること
もできる。次にこの構造が信頼性を向上させているかと
いう検証実験を行った。
(Embodiment 3) FIG. 6 is a structural sectional view of one bump after connection in the present invention. The electronic circuit device according to the present invention has many bumps as shown in FIG. For the Au bump formed on the Al electrode, a pad having a diameter larger than this bump diameter is created on the substrate side, and the Sn bump is formed.
After printing the Ag-Bi Pb-free solder on the board and positioning it so that the bumps of the LSI are on Sn37Pb, heat reflow to form Sn37Pb into a smooth fillet with less cracks. . Further, the structure as shown in FIG. 7 can be obtained by adjusting the amount of solder. Next, a verification experiment was performed to determine whether the structure improved reliability.

【0012】電子回路装置は□15mm、厚さ0.5minであ
り、これに0.35mmピッチ、0.12mm径の金属バンプを備え
ている。テスト基板はムライト製□150mm、厚さ5mm、0.
18mmのパッド径のものを使用した。このとき、パッド径
はバンプ径の1.5倍となっており、このときのフィレッ
トはパッド面とフィレットのなす角約20゜となってい
る。比較のために従来構造でのTPにおいても実験し、-5
5/150℃、3∞/hの温度サイクル試験をTP各5個ずつ行っ
た。このとき従来構造は1000∞ですべてのTPに断線が出
たが、本構造は断線しなかった。これで本構造の効果が
検証された。
The electronic circuit device has a size of 15 mm and a thickness of 0.5 min, and is provided with metal bumps having a pitch of 0.35 mm and a diameter of 0.12 mm. The test board is made of Mullite 150mm, thickness 5mm, 0.
A pad diameter of 18 mm was used. At this time, the pad diameter is 1.5 times the bump diameter, and the fillet at this time has an angle of about 20 ° between the pad surface and the fillet. For comparison, we also experimented with TP with the conventional structure, and
A temperature cycle test of 5/150 ° C and 3∞ / h was performed for each five TPs. At this time, all the TPs broke at 1000 mm in the conventional structure, but this structure did not break. Thus, the effect of this structure was verified.

【0013】[0013]

【発明の効果】本発明では、基板側のはんだフィレット
形状を樽状ではなく、なだらかなフィレットを形成する
ことにより、電子回路装置稼動時にはんだに発生する応
力・ひずみを低減し、熱疲労寿命を向上させる効果があ
る。さらにはんだ量を調整することにより電子部品のメ
タライズへはんだが到達しない構造とすれば、電子部品
側のメタライズの信頼性も向上するという効果がある。
According to the present invention, the shape of the solder fillet on the substrate side is not a barrel but a gentle fillet, so that the stress and strain generated in the solder during the operation of the electronic circuit device are reduced, and the thermal fatigue life is shortened. It has the effect of improving. Further, if the structure is such that the solder does not reach the metallization of the electronic component by adjusting the amount of solder, there is an effect that the reliability of the metallization on the electronic component side is improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】従来において、金属バンプを持つ電子回路装置
をはんだを用いて基板上に搭載した後の1つのバンプに
ついての断面概略図である。
FIG. 1 is a schematic cross-sectional view of one bump after an electronic circuit device having a metal bump is conventionally mounted on a substrate using solder.

【図2】本発明の実施例1において、金属バンプを持つ
電子回路装置をはんだを用いて金属バンプ径よりも大き
なパッドを持つ基板上に搭載した場合の1つのバンプに
ついての断面概略図である。
FIG. 2 is a schematic cross-sectional view of one bump when an electronic circuit device having a metal bump is mounted on a substrate having a pad larger than the metal bump diameter by using solder in Embodiment 1 of the present invention. .

【図3】本発明の実施例1において、金属バンプを持つ
電子回路装置を、量の調節されたはんだを用いて基板上
に搭載した場合の1つのバンプについての断面概略図で
ある。
FIG. 3 is a schematic cross-sectional view of one bump in a case where an electronic circuit device having metal bumps is mounted on a substrate by using an adjusted amount of solder in the first embodiment of the present invention.

【図4】本発明の実施例2において、金属バンプを持つ
電子回路装置をはんだを用いて金属バンプ径よりも大き
なパッドを持つ基板上に搭載した場合の1つのバンプに
ついての断面概略図である。
FIG. 4 is a schematic cross-sectional view of one bump when an electronic circuit device having a metal bump is mounted on a substrate having a pad larger than the metal bump diameter by using solder in Embodiment 2 of the present invention. .

【図5】本発明の実施例2において、金属バンプを持つ
電子回路装置を、量の調節されたはんだを用いて基板上
に搭載した場合の1つのバンプについての断面概略図で
ある。
FIG. 5 is a schematic cross-sectional view of one bump when an electronic circuit device having metal bumps is mounted on a substrate using a controlled amount of solder in Embodiment 2 of the present invention.

【図6】本発明の実施例3において、金属バンプを持つ
電子回路装置をはんだを用いて金属バンプ径よりも大き
なパッドを持つ基板上に搭載した場合の1つのバンプに
ついての断面概略図である。
FIG. 6 is a schematic cross-sectional view of one bump when an electronic circuit device having metal bumps is mounted on a substrate having pads larger than the metal bump diameter by using solder in Embodiment 3 of the present invention. .

【図7】本発明の実施例3において、金属バンプを持つ
電子回路装置を、量の調節されたはんだを用いて基板上
に搭載した場合の1つのバンプについての断面概略図で
ある。
FIG. 7 is a schematic cross-sectional view of one bump when an electronic circuit device having metal bumps is mounted on a substrate using a solder whose amount has been adjusted in Example 3 of the present invention.

【符号の説明】[Explanation of symbols]

1…Sn-Pb系高融点はんだバンプ、1A…Auバンプ、1B…Pb
3Snバンプ、2…Sn-Pb系低融点はんだ、2A…Sn37Pb、2B
…Sn-Ag-Bi系Pbフリーはんだ、3…LSI電極、4…基板パ
ッド、5…LSIチップ、6…基板。
1… Sn-Pb high melting point solder bump, 1A… Au bump, 1B… Pb
3Sn bump, 2 ... Sn-Pb low melting point solder, 2A ... Sn37Pb, 2B
... Sn-Ag-Bi Pb-free solder, 3 ... LSI electrode, 4 ... Board pad, 5 ... LSI chip, 6 ... Board.

フロントページの続き (72)発明者 西川 徹 神奈川県横浜市戸塚区吉田町292番地 株 式会社日立製作所生産技術研究所内 (72)発明者 片山 薫 神奈川県秦野市堀山下1番地 株式会社日 立製作所汎用コンピュータ事業部内 (72)発明者 三井津 健 神奈川県秦野市堀山下1番地 株式会社日 立製作所汎用コンピュータ事業部内 (72)発明者 白井 貢 神奈川県秦野市堀山下1番地 株式会社日 立製作所汎用コンピュータ事業部内 (72)発明者 高橋 毅 神奈川県秦野市堀山下1番地 株式会社日 立製作所汎用コンピュータ事業部内 (72)発明者 桐生 英一 神奈川県秦野市堀山下1番地 株式会社日 立製作所汎用コンピュータ事業部内 Fターム(参考) 5E319 AA03 AB05 AC11 CC33 GG20 5F044 KK01 KK12 KK18 Continued on the front page (72) Inventor Toru Nishikawa 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Inside the Hitachi, Ltd. Production Technology Research Laboratory (72) Inventor Kaoru Katayama 1-Horiyamashita, Hadano-shi, Kanagawa Prefecture Hitachi Ltd. General Computer Division (72) Inventor Takeshi Ken Mitsui 1 Horiyamashita, Hadano-shi, Kanagawa Prefecture Hitachi Computer Co., Ltd. (72) Inventor Mitsuru Shirai 1 Horiyamashita, Hadano-shi, Kanagawa Prefecture General, Hitachi Corporation Within Computer Division (72) Inventor Takeshi Takahashi 1st Horiyamashita, Hadano-shi, Kanagawa Prefecture In-house General Computer Division (72) Inventor Eiichi Kiryu 1st Horiyamashita, Hadano-shi, Kanagawa General-purpose Computer, Hitachi Ltd. F-term in business division (reference) 5E319 AA03 AB05 AC11 CC33 GG20 5F044 KK01 KK12 KK18

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】金属バンプを形成した電子部品を、はんだ
合金を用いて基板上に接続する電子回路装置において、
そのはんだがゆるやかなフィレットを形成することを特
徴とする電子回路装置の接続構造。
An electronic circuit device for connecting an electronic component having a metal bump formed on a substrate using a solder alloy.
A connection structure for an electronic circuit device, wherein the solder forms a loose fillet.
【請求項2】請求項1の電子回路装置の接続構造におい
て、基板側の接続パッド径を電子部品の金属バンプ径よ
りも大きくすることにより、はんだがゆるやかなフィレ
ット状に形成されることを特徴とする電子回路装置の接
続構造。
2. The connection structure for an electronic circuit device according to claim 1, wherein the solder is formed in a loose fillet shape by making the connection pad diameter on the substrate side larger than the metal bump diameter of the electronic component. Connection structure of the electronic circuit device.
【請求項3】請求項1の電子回路装置の接続構造におい
て、電子部品側の金属バンプが基板側のはんだよりも融
点の高いはんだで形成されていることを特徴とする電子
回路装置の接続構造。
3. The connection structure for an electronic circuit device according to claim 1, wherein the metal bump on the electronic component side is formed of a solder having a higher melting point than the solder on the substrate side. .
【請求項4】請求項3において、電子部品側の金属バン
プがPb含有率の高いPb-Sn系のはんだにより形成され、
また、基板側のはんだが、これよりも融点の低いPb-Sn
系のはんだであることを特徴とする電子回路装置の接続
構造。
4. The electronic component-side metal bump according to claim 3, wherein the Pb-Sn-based solder having a high Pb content is formed.
Also, the solder on the board side is Pb-Sn
A connection structure for an electronic circuit device, which is a series solder.
【請求項5】請求項3において、電子部品側の金属バン
プがAuもしくはPbを含有しないはんだ合金で、基板側の
はんだがPbを含有せずにかつ電子部品側の金属バンプよ
りも融点の低いはんだ合金でなることを特徴とする電子
回路装置の接続構造。
5. The electronic component-side metal bump according to claim 3, wherein the metal bump on the electronic component side is a solder alloy not containing Au or Pb, and the solder on the substrate side does not contain Pb and has a lower melting point than the metal bump on the electronic component side. A connection structure for an electronic circuit device, comprising a solder alloy.
【請求項6】請求項1から5のいずれか1項記載におい
て、基板側のはんだ合金が電子部品側の電極まで濡れ上
がらないことを特徴とした、電子回路装置の接続構造。
6. A connection structure for an electronic circuit device according to claim 1, wherein the solder alloy on the substrate does not wet up to the electrode on the electronic component.
【請求項7】請求項1から6のいずれか1項記載におい
て、前記基板側の接続パッド径を前記電子部品の金属バ
ンプ径の1.5〜2.0倍に設定することを特徴とする電子回
路装置の接続構造。
7. The electronic circuit device according to claim 1, wherein a diameter of the connection pad on the substrate is set to 1.5 to 2.0 times a diameter of a metal bump of the electronic component. Connection structure.
JP11016625A 1999-01-26 1999-01-26 Connection structure of electronic circuit device Pending JP2000216530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11016625A JP2000216530A (en) 1999-01-26 1999-01-26 Connection structure of electronic circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11016625A JP2000216530A (en) 1999-01-26 1999-01-26 Connection structure of electronic circuit device

Publications (1)

Publication Number Publication Date
JP2000216530A true JP2000216530A (en) 2000-08-04

Family

ID=11921542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11016625A Pending JP2000216530A (en) 1999-01-26 1999-01-26 Connection structure of electronic circuit device

Country Status (1)

Country Link
JP (1) JP2000216530A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009182212A (en) * 2008-01-31 2009-08-13 Toppan Printing Co Ltd External connection terminal board for ic card, dual interface type ic card and method for manufacturing it
WO2021200669A1 (en) 2020-03-31 2021-10-07 京セラ株式会社 Thermal head and thermal printer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009182212A (en) * 2008-01-31 2009-08-13 Toppan Printing Co Ltd External connection terminal board for ic card, dual interface type ic card and method for manufacturing it
WO2021200669A1 (en) 2020-03-31 2021-10-07 京セラ株式会社 Thermal head and thermal printer

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