JP2000216496A - Manufacture of semiconductor light emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a manufacturing method for a semiconductor light emitting element which can reduce a crystal defect and which can enhance an element characteristic. SOLUTION: At a substrate temperature as a first temperature which is higher than a second temperature at which an n-AlGaInP clad layer 3 is to be grown, an n-GaAs buffer layer 2 is grown on an n-GaAs substrate 1. As a result, the migration of Ga which constitutes the n-GaAs substrate 1 and the n-GaAs buffer layer 2 is promoted, and a crystal defect is reduced. In addition, oxygen which is stuck to the n-GaAs substrate 1, a substrate holding implement 12 and a member in the circumference of the substrate holding implement 12 is evaporated, and the n-AlGaInP clad layer 3 is then grown. As a result, when a light emitting layer is grown, the oxygen is not evaporated from the n-GaAs substrate 1, the substrate holding implement 12 and the member in the circumference of the substrate holding implement 12. Consequently, it is possible to prevent that oxygen which forms the center of a light non-emitting recombination creeps to then-AlGaInP clad layer 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a method for manufacturing a semiconductor light emitting device, and more particularly, to a metal organic chemical vapor deposition (M) method.
The present invention relates to a method of manufacturing a semiconductor laser or a light emitting diode by growing a compound semiconductor crystal layer by an OCVD method.

[0002]

2. Description of the Related Art Conventionally, a favorable Al having no crystal defects has been used.
As a method of growing a GaInP layer, a substrate temperature of 7
A method of growing an AlGaInP layer at a high temperature of 00 ° C. or higher has been proposed (Japanese Patent Laid-Open No. 2-254).
No. 715).

For example, when manufacturing the semiconductor laser shown in FIG. 7, first, an n-GaAs (gallium arsenide) substrate 1 is cleaned by chemical etching, and as shown in FIG.
-The GaAs substrate 1 is held in the substrate holder 12 and accommodated in the reaction vessel 11. The inside of the reaction vessel 11 is 15 to 100
The pressure is reduced within the range of torr, and a gas containing AsH ₃ (arsine) is introduced into the reaction vessel 11 to heat the n-GaAs substrate 1 as shown in a region I in FIG. Thereafter, the n-GaAs substrate 1 is cleaned for 30 minutes while increasing the substrate temperature from 600 ° C. to 650 ° C. Then, TM
A gas containing G (trimethylgallium) is introduced into the reaction vessel 11 to grow the n-GaAs buffer layer 2 on the n-GaAs substrate 1. After growing the n-GaAs buffer layer 2 to a predetermined thickness, the introduction of TMG is stopped, and
The growth of the GaAs buffer layer 2 is stopped. Next, FIG.
As shown in region II, the substrate temperature was 745-755 ° C.
After the temperature is raised to the maximum, the introduction of AsH ₃ into the reaction vessel 11 is stopped as shown in a region III in FIG. Then, the pressure inside the reaction vessel 11 is temporarily reduced to 15 to 35 torr, and the introduction of a gas containing PH ₃ (phosphine) into the reaction vessel 11 is started. Thereafter, a time t of about 1 second is set to replace AsH ₃ in the reaction vessel 11, and TMA (trimethylaluminum), TMG and TMG adjusted to a predetermined mixing ratio in advance are set.
A gas containing MI (trimethylindium) is supplied to the reaction vessel 11
To introduce n-Al on the n-GaAs buffer layer 2.
The GaInP cladding layer 3 is grown to a predetermined thickness.

[0004]

However, in the above-mentioned conventional method for manufacturing a semiconductor light emitting device, n-AlGaIn
The substrate temperature at which the P clad layer 3 is to be grown (745 ° C. to 75
N-G at a substrate temperature (600 ° C to 650 ° C) lower than
Since the aAs buffer layer 2 is grown, n-GaAs
Ga migration in the s substrate 1 is not sufficiently performed. As a result, dislocations initially present on the surface of the n-GaAs substrate 1 cannot be completely eliminated, and crystal defects represented by hillocks are present at high density in a crystal layer having a high Al composition such as a light emitting layer. There is a problem of doing. Further, the oxygen initially adsorbed on the substrate holding member 12 is changed to Al
Since the GaInP layer takes in the oxygen, the oxygen forms a non-radiative recombination center, which causes a problem that the device characteristics are deteriorated.

Accordingly, an object of the present invention is to provide a method for manufacturing a semiconductor light emitting device which can reduce crystal defects and improve device characteristics.

[0006]

According to a first aspect of the present invention, there is provided a method for manufacturing a semiconductor light emitting device, wherein a semiconductor substrate is accommodated in a reactor for crystal growth together with a substrate holding member holding the semiconductor substrate. Introducing a gas containing a hydride of a group III element and a group V element or an alkyl compound of a group III element and a group V element into the reaction vessel to form a light emitting layer on the substrate, the buffer layer comprising at least a group III-V compound semiconductor; In the method for manufacturing a semiconductor light emitting element in which a layer and a layer are sequentially grown at a predetermined growth temperature, at least gallium (Ga) or indium (In) is used as a group III element serving as a material of the buffer layer, and the buffer layer should be grown. The first temperature is set higher than the second temperature at which the light emitting layer is to be grown, and the oxygen attached to the substrate holding member is evaporated during the growth of the buffer layer. Thus, oxygen is not evaporated from the substrate holding member during the growth of the light emitting layer at the second temperature.

Here, the substrate holding member includes not only a holder for directly holding a substrate but also a member housed in a reaction vessel together with the holder.

According to the method of manufacturing a semiconductor light emitting device of the first aspect, the semiconductor substrate is accommodated in the crystal growth reaction container together with the substrate holding member holding the semiconductor substrate. Then, the first temperature at which the buffer layer is to be grown is:
Setting the light emitting layer higher than a second temperature to be grown;
A buffer layer is grown on the semiconductor substrate, and oxygen attached to the substrate holding member is evaporated. Then, the growth temperature is lowered to the second temperature at which the light emitting layer is to be grown, and the light emitting layer is grown on the buffer layer.

As described above, in the above-described method for manufacturing a semiconductor light emitting device, the buffer layer is grown on the semiconductor substrate at the first temperature higher than the second temperature at which the light emitting layer is to be grown. Dislocations decrease. Further, since the buffer layer contains gallium or indium having a high migration speed, it is possible to easily prevent the generation of crystal defects in the buffer layer. Therefore,
The crystal defects of the buffer layer on the semiconductor substrate with few dislocations are further reduced, and the crystal defects of the light emitting layer grown on the buffer layer can be reduced. Further, at the time of growing the buffer layer, the light-emitting layer is grown after evaporating oxygen attached to the substrate holding member at a first temperature higher than the second temperature at which the light-emitting layer is to be grown. Oxygen can be prevented from evaporating from the substrate holding member. Therefore, it is possible to prevent oxygen forming the non-radiative recombination center from entering the light-emitting layer. As a result, a semiconductor light emitting device having high luminous efficiency can be manufactured.

According to a second aspect of the present invention, in the method of manufacturing a semiconductor light emitting device according to the first aspect, after growing the buffer layer, the growth temperature is set to the second temperature or lower. The method is characterized in that the type of the group V element is switched in the state, the growth of the light emitting layer is started while increasing the growth temperature, and the light emitting layer is grown to a predetermined thickness when the temperature reaches the second temperature.

According to the method of manufacturing a semiconductor light emitting device of the second aspect, after the buffer layer is grown, V is increased in a state where the growth temperature is lowered to a second temperature or less at which the light emitting layer is to be grown.
The type of group element can be switched. Then, the growth temperature is raised to the second temperature while growing the light emitting layer, and the light emitting layer is grown to a predetermined thickness on the buffer layer at the second temperature. As described above, the type of the group V element is switched at a growth temperature lower than the second temperature at which the light emitting layer is to be grown. Therefore, when switching the type of the group V element, the vacancy (so-called void) of the group V element constituting the buffer layer is changed.
Can be prevented from occurring.

According to a third aspect of the present invention, in the method of manufacturing a semiconductor light emitting device according to the first aspect, the growth temperature is set to a third temperature lower than the second temperature on the buffer layer. After growing the second buffer layer in the set state, the type of the group V element is switched, and the light emitting layer is started to grow while increasing the growth temperature. When the growth temperature reaches the second temperature, It is characterized in that the light emitting layer is grown to a predetermined thickness.

According to the third aspect of the present invention, the buffer layer is grown on the semiconductor substrate with the growth temperature set at the first temperature higher than the second temperature at which the light emitting layer is to be grown. . Then, the second to grow the light emitting layer
A second buffer layer is grown on the buffer layer with the growth temperature set to a third temperature lower than the temperature. Then, after switching the type of the group V element at the growth temperature of the third temperature, the growth temperature is increased to the second temperature while growing the light emitting layer, and the second buffer layer is grown at the second temperature. A light emitting layer is grown thereon to a predetermined thickness. As described above, the growth temperature is set to the third temperature lower than the second temperature at which the light emitting layer is to be grown, the second buffer layer is grown on the buffer layer, and the type of the group V element is switched. As a result, the crystal defects of the second buffer layer grown on the buffer layer with few crystal defects are further reduced. In addition, vacancies (so-called voids) of the group V element constituting the second buffer layer do not occur when the type of the group V element is switched. Therefore, it is possible to keep the surface of the second buffer layer clean.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, illustrated embodiments of the present invention will be described in detail.

(First Embodiment) FIG. 1 shows a sequence for manufacturing a semiconductor laser. The semiconductor laser to be manufactured in this embodiment has the same structure as that shown in FIG. 7, and the n-GaAs substrate 1 has n-GaAs
Buffer layer 2, n-AlGaInP cladding layer 3, Al
A GaInP active layer 4, a p-AlGaInP clad layer 5, an n-GaAs current block layer 6, and a p-GaAs contact layer 7 are sequentially laminated. As a material for manufacturing this semiconductor laser, a gas containing TMA, TMG and TMI as Group III elements and a gas containing AsH ₃ and PH ₃ as Group V elements are used.

First, as shown in FIG. 6, an n-GaAs substrate 1 is held in a reaction vessel 11 while being held by a substrate holder 12. The pressure inside the reaction vessel 11 was reduced to 10 to 100 torr, and as shown in a region I in FIG.
A gas containing AsH ₃ is introduced therein. Then, n-Ga
The heating of the As substrate 1 is started, and the substrate temperature is raised to a first temperature (preferably 770 to 830 ° C.) at which the n-GaAs buffer layer 2 is to be grown, for example, 800 ° C. Then, while maintaining the substrate temperature at 800 ° C., T
A gas containing MG is introduced, and n-GaAs substrate 1 is filled with n.
Growing the GaAs buffer layer 2 and n-G
Oxygen adhering to the aAs substrate 1, the substrate holder 12, and members around the substrate holder 12 is evaporated. And n
After growing the GaAs buffer layer 2 to a predetermined thickness, the introduction of TMG into the reaction vessel 11 is stopped, and n-G
The growth of the aAs buffer layer 2 is stopped. Next, as shown in a region II in FIG. 1, the substrate temperature is decreased to a second temperature at which the n-AlGaInP clad layer 3 is to be grown, for example, 750 ° C. Next, as shown in a region III in FIG.
The kind of the group V element of the gas introduced into the reaction vessel 11 is switched from AsH ₃ to PH ₃ . Then, in order to replace AsH ₃ remaining in the reaction vessel 11, a time t, for example, t = 2 seconds elapses while only the gas containing PH ₃ is introduced into the reaction vessel 11. After that, a gas containing TMA, TMG and TMI is introduced into the reaction vessel 11, and n-G
An n-AlGaInP cladding layer 3 is grown on the aAs buffer layer 2 to a predetermined thickness.

As described above, in the region I, nA
The second temperature during growth of the lGaInP cladding layer 3 (750
C)), the n-GaAs buffer layer 2 is grown with the substrate temperature set to a first temperature (800 ° C.) higher than
The migration of Ga constituting the n-GaAs substrate 1 is promoted, and the dislocation existing on the surface of the n-GaAs substrate 1 is reduced. As a result, n-GaAs with few dislocations
Crystal defects of the n-GaAs buffer layer 2 grown on the substrate 1 are reduced. Further, since the n-GaAs buffer layer 2 also contains Ga having a high migration rate, n
-The crystal defects of the GaAs buffer layer 2 are further reduced. Therefore, in the n-AlGaInP cladding layer 3 grown on the n-GaAs buffer layer 2 having good crystallinity, crystal defects such as hillocks can be significantly reduced. 1 defect
0000 / cm ³ , whereas in this example n-AlGa
The crystal defect density of the InP cladding layer 3 is 1000 / cm ³ ).

Further, an n-GaAs substrate 1, a substrate holder 1
Since the n-AlGaInP clad layer 3 is grown after evaporating oxygen attached to the members around the substrate holder 12 and the substrate holder 12, the n-GaAs substrate 1 and the substrate holder 12 are grown during the growth of the n-AlGaInP clad layer 3. Further, it is possible to prevent oxygen from evaporating from members around the substrate holder 12. As a result, the conventional n-A shown in FIG.
Compared to the oxygen concentration contained in the lGaInP cladding layer 3, as shown in FIG.
The oxygen concentration in the InP cladding layer 3 is greatly reduced.
As described above, since the incorporation of oxygen into the n-AlGaInP cladding layer 3 is almost completely prevented, the n-AlGaInP
The characteristics of the light emitting layer including the cladding layer 3 can be improved. As a result, semiconductor lasers, 1 kA / cm ² oscillation threshold density from 1.5 kA / cm ² having the light-emitting layer
Can be reduced to Furthermore, for the yellow light emitting diode, 5
The axial luminous intensity was increased from 4 cd to 6 cd in the form of a mm diameter lamp.

(Second Embodiment) FIG. 3 shows a first embodiment for manufacturing a semiconductor laser (having the same structure as that shown in FIG. 7).
7 shows a sequence different from that of the embodiment.

First, as shown in FIG. 6, an n-GaAs substrate 1 is held in a substrate holder 12 and housed in a reaction vessel 11. Then, the inside of the reaction vessel 11 is 10 to 100 torr.
Then, AsH ₃ is introduced into the reaction vessel 11 as shown in a region I in FIG. Then, n-GaAs
The s substrate 1 is started to be heated, and the substrate temperature is raised to a first temperature (preferably 770 to 830 ° C.) at which the n-GaAs buffer layer 2 is to be grown, for example, 810 ° C. Substrate temperature is 8
When the temperature reaches 10 ° C., the gas containing TMG is supplied to the reaction vessel 1
1 and n-GaAs substrate 1 on n-GaAs substrate 1.
While growing the buffer layer 2, oxygen adhering to the n-GaAs substrate 1, the substrate holder 12 and members around the substrate holder 12 is evaporated. And this nG
After growing the aAs buffer layer 2 to a predetermined thickness, the introduction of TMG into the reaction vessel 11 is stopped, and the n-GaAs
The growth of the buffer layer 2 is stopped. Next, the area in FIG.
After the substrate temperature was lowered to 700 ° C. as shown in II, the type of group V element of the gas introduced into the reaction vessel 11 was changed to
Switching from AsH ₃ to PH _3. Then, for example, after t = 5 seconds, a gas containing TMA, TMG and TMI is introduced into the reaction vessel 11, and the growth of the n-AlGaInP clad layer 3 is started. Then, while growing the n-AlGaInP cladding layer 3, the substrate temperature is raised to a second temperature at which good crystallinity is obtained, for example, 760 ° C.
An n-AlGaInP cladding layer 3 is grown on the n-GaAs buffer layer 2 to a predetermined thickness as shown in a region III in the middle.

As described above, the substrate temperature lower than the second temperature (760 ° C.) at which the n-AlGaInP clad layer 3 is to be grown.
(700 ° C.), the group V element of the gas introduced into the reaction vessel 11 is switched from AsH ₃ to PH _3.
When switching from sH ₃ to PH ₃ , it is possible to minimize the occurrence of vacancies (so-called voids) of As forming the n-GaAs buffer layer 2. Therefore, crystal defects such as hillocks in the n-AlGaInP cladding layer 3 can be further reduced as compared to the first embodiment (in the first embodiment, the number of crystal defects in the n-AlGaInP cladding layer 3 is 10%).
00 / cm ³ such whereas, in this example, n-AlGaIn
The crystal defect density of the P cladding layer 3 is 100 / cm ³ ). Also, as in the case of the first embodiment, n-Ga
After evaporating oxygen adhering to the As substrate 1, the substrate holder 12, and members around the substrate holder 12, the light emitting layer is grown in a state where oxygen no longer evaporates. A semiconductor light emitting device having high luminous efficiency without entering the light emitting layer can be manufactured.

(Third Embodiment) FIG. 4 shows a sequence for manufacturing a semiconductor laser. FIG. 5 is a sectional view of a semiconductor laser to be manufactured in this embodiment.
This semiconductor laser differs from the semiconductor laser shown in FIG. 7 only in that the n-GaAs buffer layer 2a and the n-GaAs second buffer layer 2b constitute a buffer layer on the n-GaAs substrate 1.

First, as shown in FIG. 6, the n-GaAs substrate 1 is held in the substrate holder 12 and accommodated in the reaction vessel 11. Then, the inside of the reaction vessel 11 is 10 to 100 torr.
The pressure is reduced to r, and a gas containing AsH ₃ is introduced into the reaction vessel 11 as shown in a region I in FIG. And
The n-GaAs substrate 1 is heated, and the substrate temperature is raised to a first temperature (770-830 ° C. is desirable) at which the n-GaAs buffer layer 2a is to be grown, for example, 790 ° C. While maintaining the substrate temperature at 790 ° C., a gas containing TMG is introduced into the reaction vessel 11 to grow the n-GaAs buffer layer 2 a on the n-GaAs substrate 1 on the n-GaAs buffer layer 2 a, Oxygen adhering to the substrate holder 12 and members around the substrate holder 12 on the GaAs substrate 1 is evaporated. After growing the n-GaAs buffer layer 2a to a predetermined thickness, the TM
The introduction of the gas containing G is stopped, and the n-GaAs buffer layer 2 is removed.
Stop the growth of a. Next, as shown in a region 11 in FIG. 4, the substrate temperature is lowered to 680 ° C., which is the third temperature at which the n-GaAs second buffer layer 2b is to be grown, and then TMG
Is introduced into the reaction vessel 11 again, and n-Ga
N-GaAs second buffer layer 2 on As buffer layer 2a
grow b. Thereafter, the introduction of TMG into the reaction vessel 11 is stopped, and the V of the gas introduced into the reaction vessel 11 is reduced.
The group element is switched from AsH ₃ to PH ₃ . Then, for example, after t = 10 seconds, a gas containing TMA, TMG and TMI is introduced into the reaction vessel 11, and the growth of the n-AlGaInP cladding layer 3 is started. Then, n-AlGa
After growing the substrate temperature to a second temperature at which good crystallinity is obtained, for example, 760 ° C. while growing the InP cladding layer 3, n-GaAs is formed as shown in a region III in FIG.
An n-AlGaInP cladding layer 3 is grown on the second buffer layer 2b to a predetermined thickness.

As described above, the first temperature higher than the second temperature (760 ° C.) at which the n-AlGaInP clad layer 3 is to be grown.
N-GaAs buffer layer 2a having crystal defects reduced by growing at a substrate temperature of (790 ° C.).
Since the As second buffer layer 2b is grown, n-GaAs
s The second buffer layer 2b has substantially no crystal defects. In addition, with the substrate temperature set to a third temperature (680 ° C.) lower than the second temperature (760 ° C.) at which the n-AlGaInP clad layer 3 is to be grown, a group V element of a gas introduced into the reaction vessel 11 is set. Is switched from AsH ₃ to PH ₃ .
As vacancies constituting the n-GaAs second buffer layer 2b
(So-called omission) can be minimized. Therefore,
It is possible to keep the surface of the n-GaAs second buffer layer 2b in a cleaner state, that is, a state with less crystal defects. (In the second embodiment, the crystal defect density of the n-AlGaInP cladding layer 3 is 100 / cm ³ , whereas in this example, the crystal defect density of the n-AlGaInP cladding layer 3 is 50 / cm ³ ). Further, as in the first and second embodiments, after the oxygen attached to the substrate holder 12 and the members around the substrate holder 12 on the n-GaAs substrate 1 is evaporated, the oxygen no longer evaporates. Therefore, a semiconductor light emitting device having high luminous efficiency can be manufactured since oxygen forming a non-radiative recombination center does not enter the light emitting layer.

In the above embodiment, the n-GaAs buffer layer 2a is grown on the n-GaAs substrate 1. For example, when growing a GaN buffer layer on a sapphire substrate,
Since the crystallized GaN buffer layer plays the role of a substrate, the buffer layer according to the present invention may be grown again on the GaN buffer layer with the growth temperature set higher than the growth temperature of the light emitting layer.

[0026]

As is clear from the above, in the method of manufacturing a semiconductor light emitting device according to the first aspect of the present invention, the growth temperature is set to a first temperature higher than the second temperature at which the light emitting layer is to be grown.
Since the buffer layer is grown on the semiconductor substrate, dislocation existing on the surface of the semiconductor substrate can be reduced. Further, in the method for manufacturing a semiconductor light emitting device, since the buffer layer contains gallium or indium having a high migration speed, crystal defects in the buffer layer can be further reduced. Therefore, crystal defects in the light emitting layer can be significantly reduced. In addition, after evaporating oxygen attached to the substrate holding member, the light emitting layer is grown in a state where oxygen is no longer evaporated, so that oxygen forming a non-radiative recombination center does not enter the light emitting layer, and high luminous efficiency is obtained. Semiconductor light emitting device having the same.

In the method of manufacturing a semiconductor light emitting device according to the second aspect of the present invention, the type of the group V element is switched while the growth temperature is set lower than the second temperature at which the light emitting layer is to be grown. It is possible to prevent vacancies (so-called vacancies) of group V elements forming the buffer layer when switching the kind of element.

In the method for manufacturing a semiconductor light emitting device according to the third aspect of the present invention, the second buffer layer is grown on the buffer layer having good crystallinity, so that the crystallinity of the second buffer layer is further improved. be able to. Further, the type of the group V element is switched while the growth temperature is set to a third temperature lower than the second temperature at which the light emitting layer is to be grown.
At the time of switching the type of group element, it is possible to prevent the generation of vacancies (so-called voids) of the group V element constituting the second buffer layer.
Therefore, it is possible to keep the surface of the second buffer layer clean.

[Brief description of the drawings]

FIG. 1 is a diagram showing a sequence for manufacturing a semiconductor light emitting device according to a first embodiment of the present invention.

FIG. 2A is a graph showing an oxygen concentration distribution of a crystal layer grown by the method for manufacturing a semiconductor light emitting device according to the first embodiment of the present invention;
FIG. 2 is a view showing a result of detection by MS (Secondary Ion Mass Spectrometry), and FIG. 2B shows a result of SIMS detecting an oxygen concentration distribution of a crystal layer grown by a conventional method for manufacturing a semiconductor light emitting device. FIG.

FIG. 3 is a diagram showing a sequence for manufacturing a semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 4 is a diagram showing a sequence for manufacturing a semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 5 is a sectional view illustrating a structure of a semiconductor laser manufactured by a method for manufacturing a semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 6 is a sectional view of a main part of an MOCVD apparatus for manufacturing a semiconductor laser.

FIG. 7 is a cross-sectional view showing a structure of a semiconductor laser manufactured by the first and second embodiments of the present invention and a conventional method for manufacturing a semiconductor light emitting device.

FIG. 8 is a diagram showing a sequence for manufacturing a conventional semiconductor light emitting device.

[Explanation of symbols]

1 n-GaAs substrate, 2 n-GaAs
s buffer layer, 2an n-GaAs buffer layer,
2b n-GaAs second buffer layer, 3 n-AlGa
InP cladding layer, 4 AlGaInP active layer, 5
p-AlGaInP cladding layer, 6 n-GaAs current blocking layer, 7 p-GaAs contact layer.

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Shoichi Oyama 22-22 Nagaike-cho, Abeno-ku, Osaka City, Osaka F-term (reference) 4K030 AA05 BA55 BB12 CA04 GA02 KA23 KA26 LA13 LA18 5F041 AA03 CA34 CA35 CA65 CA67 5F045 AA04 AB18 AC01 AC08 AD12 AE23 AE25 BB12 CA12 5F073 CA14 CB02 CB07 DA05 DA35

Claims (3)

[Claims] 1. A semiconductor substrate is accommodated in a crystal growth reaction container together with a substrate holding member holding the semiconductor substrate.
A gas containing a hydride of a Group III and Group V element or an alkyl compound of a Group III and Group V element is introduced into the reaction vessel, and a buffer layer and a light emitting layer comprising at least a Group III-V compound semiconductor are formed on the substrate. And a method for manufacturing a semiconductor light-emitting device in which at least a group III element serving as a raw material of the buffer layer is gallium (Ga) or indium (In). 1 temperature is set higher than a second temperature at which the light emitting layer is to be grown, and oxygen attached to the substrate holding member is evaporated during the growth of the buffer layer, and the light emitting layer is grown at the second temperature. A method of manufacturing a semiconductor light emitting device, wherein oxygen is not evaporated from the substrate holding member during the growth of the semiconductor light emitting device. 2. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein after growing the buffer layer, the type of the group V element is switched while the growth temperature is equal to or lower than the second temperature.
A method for manufacturing a semiconductor light emitting device, comprising: starting growing the light emitting layer while increasing a growth temperature, and growing the light emitting layer to a predetermined thickness when the temperature reaches the second temperature. 3. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein a second buffer layer is grown on said buffer layer at a growth temperature set to a third temperature lower than said second temperature. Thereafter, the type of the group V element is switched, and the light emitting layer is started to grow while increasing the growth temperature.
A method for manufacturing a semiconductor light emitting device, wherein the light emitting layer is grown to a predetermined thickness in a state where the temperature has reached.