JPH10144612A - Growth of semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for growing a semiconductor device which can deteriorate such a first nitride family-III-V compound semiconductor layer containing In as a GaInN layer when it is necessary to grow a second nitride family-II-V compound semiconductor layer not containing In on the first compound semiconductor layer at a growth temperature higher than the growth temperature than that of the first compound semiconductor layer. SOLUTION: In a method for manufacturing a GaN semiconductor laser, a growth temperature of a p type AlGaN cladding layer 29 and a p type GaN contact layer 30, which are provided above a GaInN active layer 26 and which is necessary to be grown at a growth temperature higher than that of the active layer, is set to be above the growth temperature of the active layer 26 and below 980 deg.C, e.g. between 930 and 960 deg.C. Preferably, prior to growth of the cladding layer 29, an underlying layer is previously covered with a p type AlGaN cap layer 28 which was grown at a growth temperature equal to or lower than the growth temperature of the active layer 26.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for growing a semiconductor, and more particularly to a method for growing a nitride-based III-V compound semiconductor layer containing In, such as a GaInN layer, at a growth temperature higher than the growth temperature. Not another nitride III-V
A semiconductor device that needs to grow a group III compound semiconductor layer,
For example, it is suitable for application to the manufacture of a semiconductor light emitting device.

[0002]

2. Description of the Related Art Nitride (nitride) -based III-V compound semiconductors such as GaN, AlGaN, and GaInN have band gaps ranging from 1.8 eV to 6.2 eV, and emit infrared to ultraviolet light. Since it is theoretically possible to realize a light-emitting element that can perform light emission, research and development have been actively conducted in recent years.

In the case of manufacturing a light emitting diode or a semiconductor laser using this nitride III-V compound semiconductor, GaN, AlGaN, GaInN, etc. are laminated in multiple layers, and the light emitting layer, that is, the active layer is an n-type cladding layer and an active layer. p
It is necessary to form a structure sandwiched between the mold cladding layers.

[0004] Metal-organic chemical vapor deposition (MOCVD) is used exclusively for the manufacture of such GaN-based semiconductor light-emitting devices. The basic technology of crystal growth by the MOCVD method is a buffer formed by low-temperature growth. Introduction of layers (Appl. Phys. Lett., 48, 353 (1986) and Jpn. J. Appl. Phy
s., 30, L1620 (1991)) and p-type GaN layer growth technology (Jpn.
J.Appl.Phys., 28, L2112 (1989) and Jpn.J.Appl.Phy
s., 31, L139 (1992)). Also, it has been reported that the growth of a GaInN layer used as an active layer is favorable under low-temperature and low-hydrogen conditions (JE).
electronic Materials, 21 (2), 157 (1992)). The development of these basic technologies has led to the development of GaN-based light-emitting diodes that can emit blue or green light and GaN-based semiconductor lasers that can oscillate at room temperature with an emission wavelength on the order of 400 nm. Has been

[0005] A standard process of crystal growth by MOCVD currently used for manufacturing a GaN-based semiconductor laser is as follows.

That is, first, a c-plane sapphire substrate is
The surface of the c-plane sapphire substrate is thermally cleaned by performing a heat treatment at 1050 ° C. for 10 minutes in _two gases. Next, after lowering the substrate temperature to 510 ° C.
A GaN buffer layer is grown on the c-plane sapphire substrate. Next, after increasing the growth temperature to 1020 ° C., c
N-type GaN contact layer on planar sapphire substrate, n-type A
An lGaN cladding layer and an n-type GaN optical waveguide layer are sequentially grown. Next, after lowering the growth temperature to 800 ° C., a GaInN active layer is grown on the c-plane sapphire substrate. Next, after increasing the growth temperature to 1020 ° C., a p-type GaN optical waveguide layer, a p-type AlGaN cladding layer, and a p-type GaN contact layer are sequentially grown on a c-plane sapphire substrate.

Here, an n-type GaN contact layer, an n-type A
lGaN cladding layer, n-type GaN optical waveguide layer, p-type GaN
Optical waveguide layer, p-type AlGaN cladding layer and p-type GaN
The growth temperature of the contact layer is set to 1020 ° C.
This is because such a high temperature is suitable for growing a GaN-based semiconductor layer having good crystallinity. On the other hand, GaInN
The reason why the growth temperature is lowered to 800 ° C. during the growth of the active layer is that the dissociation pressure of N of GaInN is so large that it cannot be grown at the growth temperature of GaN or AlGaN of 1020 ° C.

[0008]

However, currently reported threshold current densities of GaN-based semiconductor lasers manufactured by the above-described process are 3 to 10 k.
A / cm ^2, which is much larger than the theoretical expectation, the achievement of room temperature continuous oscillation requires a further reduction in threshold current density.

The present inventor has conducted various studies to determine the cause. As a result, the reason why the threshold current density of the GaN-based semiconductor laser manufactured by the above-described process is high is as follows.
Although the laser structure may not be optimized, it has been found that the quality of the GaInN active layer, particularly the optical quality, is low and that the emission intensity from the GaInN layer is considerably lower than theoretically expected. As a result of studying the cause, the growth temperature was set to 1 when growing the p-type GaN optical waveguide layer, the p-type AlGaN cladding layer, and the p-type GaN contact layer after growing the GaInN active layer.
When the temperature was increased to 020 ° C., it was found that degradation was caused by decomposition of InN from the GaInN active layer. Therefore, in order to reduce the threshold current density of the GaN-based semiconductor laser, it is important to suppress the deterioration of the GaInN active layer.

The above description relates to the deterioration of the GaInN active layer. The same deterioration is caused by the nitride III-
This can occur in the entire group V compound semiconductor layer.

Therefore, an object of the present invention is to provide a GaIn
It is necessary to grow another nitride-based III-V compound semiconductor layer containing no In on the nitride-based III-V compound semiconductor layer containing In such as an N layer at a growth temperature higher than its growth temperature. In the case, the nitride-based III containing In
An object of the present invention is to provide a method for growing a semiconductor, which can prevent deterioration of a -V compound semiconductor layer.

[0012]

In order to achieve the above object, a method for growing a semiconductor according to the present invention is directed to a method for growing a nitride-based III-V compound semiconductor containing no In-containing nitride-based III-V compound semiconductor layer. In a semiconductor growth method in which a group V compound semiconductor layer is vapor-phase grown, the growth temperature of a nitride-based III-V compound semiconductor layer not containing In is set to I
The growth temperature of the nitride-based III-V compound semiconductor layer containing n is set to be higher than or equal to 980 ° C.

In the present invention, preferably, before growing the nitride-based III-V compound semiconductor layer containing no In, the growth temperature of the nitride-based III-V compound semiconductor layer containing In is preferably increased. The surface of the underlayer is covered with a protective film made of AlGaN grown at a growth temperature substantially equal to or lower than the above. In this case, the nitride-based III-V group compound semiconductor layer containing In as a base layer is
By being directly or indirectly covered with the protective film made of N, the decomposition of InN in the nitride-based III-V compound semiconductor layer containing In can be effectively suppressed. This can be prevented, or the growth temperature of the nitride-based III-V compound semiconductor layer containing no In can be set higher.

In the present invention, if the surface of the underlayer is not covered with the protective film made of AlGaN before the nitride-based III-V compound semiconductor layer containing no In is vapor-phase grown, it does not contain In. The growth temperature of the nitride-based III-V compound semiconductor layer is adjusted to the nitride-based III containing In.
The temperature is set to be equal to or higher than the growth temperature of the group V compound semiconductor layer and equal to or lower than 960 ° C.

In the present invention, while preventing the deterioration of the nitride III-V compound semiconductor layer containing In,
In order to prevent the surface morphology of the nitride-based III-V compound semiconductor layer containing no nitride from deteriorating and lowering the carrier concentration, particularly the hole concentration, the nitride-based III-V compound semiconductor containing no In-
The growth temperature of the group V compound semiconductor layer is set to 800 to 980C, preferably 900 to 960C, more preferably 930 to 960.
° C.

In the present invention, the nitride-based III-V compound semiconductor layer specifically comprises at least one group III element selected from the group consisting of Al, Ga, In and B, and N. An example of the nitride-based III-V compound semiconductor layer containing In is GaIn.
An example of an N layer that does not contain In is GaN.
And an AlGaN layer.

In the present invention, a metal-organic chemical vapor deposition (MOCVD) method is typically used for growing a nitride-based III-V compound semiconductor layer, but a molecular beam epitaxy (MBE) method is used. May be used.

According to the present invention having the above-described structure, the growth temperature of the nitride-based III-V compound semiconductor layer not containing In can be increased by the growth of the nitride-based III-V compound semiconductor layer containing In. Since the temperature is not lower than the temperature and not higher than 980 ° C., even when the nitride-based III-V compound semiconductor layer containing no In is grown on the nitride-based III-V compound semiconductor layer containing In, The decomposition of InN from the material III-V compound semiconductor layer can be suppressed, and the deterioration thereof can be suppressed.

[0019]

Embodiments of the present invention will be described below with reference to the drawings.

Before describing the embodiment of the present invention, first, when a heat treatment was performed after the growth of the GaInN active layer, the effect of the heat treatment on the optical quality of the GaInN active layer, specifically, the emission intensity was examined. The results will be described. In this experiment, two samples each having a GaInN / GaN single quantum well structure as shown in FIGS. 1 and 2 were used. For convenience, the sample shown in FIG. 1 is referred to as sample A, and the sample shown in FIG. The method for producing these samples A and B is as follows.

To produce the sample A shown in FIG. 1, first,
After the c-plane sapphire substrate 1 is placed in a reaction tube of a MOCVD apparatus (not shown), a mixed gas of, for example, H ₂ and N ₂ is flowed into the reaction tube as a carrier gas at 1050 ° C.
C-plane sapphire substrate 1
Thermal cleaning of the surface of. Next, after lowering the substrate temperature to 530 ° C., trimethylgallium (TMGa, Ga (CH ₃ ) ₃ ) as a Ga raw material and ammonia (NH ₃ ) as a N raw material are supplied into the reaction tube, and the c-plane sapphire substrate A GaN buffer layer 2 having a thickness of about 25 nm is grown on the substrate 1. Next, the supply of TMGa into the reaction tube is stopped, and while the supply of NH ₃ is kept as it is, the growth temperature is raised to 990 ° C., and TMGa and Si, which is an n-type impurity (donor impurity), are introduced into the reaction tube. Silane (SiH ₄ ) is supplied as a dopant, and a 2 μm thick S
An i-doped n-type GaN layer 3 is grown.

Next, the supply of TMGa into the reaction tube was stopped, the growth temperature was lowered to 780 ° C., and TMG was introduced into the reaction tube.
is supplied to grow the n-type GaN layer 3 thinly. This n
-Type GaN layer 3 is formed while lowering the growth temperature.
Since the surface of the N layer 3 may be contaminated, the thin n-type GaN layer 3 is grown just before the growth of the n-type GaInN active layer 4 to be grown next, and the n-type GaInN active layer 4 is cleaned. It is for growing. Next, while keeping the growth temperature at 780 ° C., triethylgallium (TEGa, Ga (C ₂ H ₅ ) ₃ ) as a Ga source and In material as an In source in addition to NH ₃ as an N source in the reaction tube. Trimethylindium (TMIn, I
n (CH ₃ ) ₃ ) is supplied to grow a Si-doped n-type GaInN active layer 4 having a thickness of about 3 nm. Here, the In composition ratio of the n-type GaInN active layer 4 is 0.2.

Next, while the growth temperature was kept at 780 ° C., the supply of TMIn into the reaction tube was stopped, and the Ga source was switched to TMGa to obtain a 100 nm thick film.
An n-type GaN layer 5 doped with m Si is grown.

As described above, a sample A having a GaInN / GaN single quantum well structure is manufactured.

The method for fabricating sample B shown in FIG.
After growing the InN active layer 4, the growth temperature is set to 780 ° C.
80 nm thick Si-doped n-type G
aN layer 5 and 20 nm thick Si-doped n-type AlG
Except that the aN cap layer 6 is sequentially grown, the method is the same as that of the sample A. Here, the Al composition ratio of the n-type AlGaN cap layer 6 is 0.15.

The samples A and B produced as described above were placed in a reaction tube of a MOCVD apparatus and mixed with NH _3.
800 ° C, 900 ° C and 990 ° C in atmosphere
And heat-treated for 1 hour. Then, the emission spectrum from the n-type GaInN active layer 4 was measured at room temperature using the samples A and B. 3 and 4 show the measurement results of the emission spectra of Sample A and Sample B, respectively. In addition, the temperature of the sample A and the sample B was measured by measuring the temperature of the surface through a quartz reaction tube with a radiation thermometer.

FIGS. 3 and 4 show that Samples A and B
In both cases, light emission is observed near a wavelength of 400 nm. Of these, the light emission intensity of Sample A was 900 ° C.
Until the heat treatment, the temperature is almost the same as before, but when the heat treatment temperature is 990 ° C., it is reduced to about 1/20 of that before the heat treatment. For sample B, the luminescence intensity was almost the same as before sample heat treatment up to 900 ° C., but decreased to about と き に は when the heat treatment temperature was 990 ° C. The emission intensity is small.

FIG. 5 shows the results of measuring the heat treatment temperature dependence of the emission intensity of Samples A and B. However, the heat treatment was performed at 800 ° C., 900 ° C., 9 ° C. in an NH ₃ atmosphere.
The operation was carried out at 30 ° C., 960 ° C. and 990 ° C. for 1 hour. The emission intensity was measured at room temperature and 77K (liquid nitrogen temperature).

FIG. 5 clearly shows that the emission intensity of Samples A and B decreases as the heat treatment temperature (T) increases. Among them, the emission intensity of Sample A sharply decreases when the heat treatment temperature exceeds 960 ° C. On the other hand, for Sample B, the decrease in the emission intensity with the increase in the heat treatment temperature was more gradual than that for Sample A,
The heat treatment temperature at which the light emission intensity becomes the same as that of the sample A heat-treated at ℃ is about 980 ° C., which is about 20 ° C. higher than the sample A.

As described above, the decrease in the luminous intensity with respect to the increase in the heat treatment temperature is smaller in the sample B than in the sample A because the sample B has the n-type AlGa on the n-type GaN layer 5.
This is because the N cap layer 6 is grown. That is, the n-type AlGaN cap layer 6 is made of n-type GaInN
This is because deterioration of the active layer 4 is prevented. Where A
Considering that lGaN has a higher equilibrium vapor pressure of N than GaN, it is considered that the deterioration of the n-type GaInN active layer 4 involves diffusion of vacancy defects from the surface to the inside.

Now, a first embodiment of the present invention will be described on the premise of the above. In the first embodiment, a case where the present invention is applied to the manufacture of a GaN-based light emitting diode will be described.

FIG. 6 is a sectional view for explaining a method of manufacturing the GaN-based light emitting diode according to the first embodiment. FIG. 7 shows a growth sequence according to the first embodiment.

In the method of manufacturing the GaN-based light emitting diode according to the first embodiment, as shown in FIGS. 6 and 7, the c-plane at 1050.degree. After the sapphire substrate 11 has been subjected to thermal cleaning, on the c-plane sapphire substrate 11 at a growth temperature of, for example, 530.degree.
A m GaN buffer layer 12 is grown. Next, after increasing the growth temperature to, for example, 990 ° C., an n-type GaN layer 13 having a thickness of, for example, 3 μm is grown on the GaN buffer layer 12. Next, after lowering the growth temperature to, for example, 780 ° C., a thin n-type GaN layer 13, for example, GaI having a thickness of 3 nm is formed.
nN active layer 14 and p-type AlG having a thickness of, for example, 20 nm
The aN cap layer 15 is sequentially grown. Here, GaI
The In composition ratio of the nN active layer 14 is, for example, 0.2, p-type Al
The Al composition ratio of the GaN cap layer 15 is, for example, 0.15. Next, after increasing the growth temperature to, for example, 930 ° C., a p-type GaN layer 16 having a thickness of, for example, 1.5 μm is grown. The growth time of the p-type GaN layer 16 is, for example, about 1 hour. Here, for example, Si is used as the n-type impurity of the n-type GaN layer 13 and, for example, SiH ₄ is used as the dopant. Also, the p-type AlGaN cap layer 1
For example, Mg is used as a p-type impurity (acceptor impurity) of the p-type GaN layer 16 and the p-type GaN layer 16, and biscyclopentadienyl magnesium (C
p ₂ Mg). Thereafter, a heat treatment is performed at 800 ° C. for 10 minutes in an N ₂ atmosphere, for example, to activate the p-type impurities.

Next, although not shown, after performing a predetermined patterning, a p-side electrode is formed on the p-type GaN layer 16 and the n-side electrode is brought into contact with the n-type GaN layer 13 to form a GaN-based electrode. Manufacture light emitting diodes.

FIG. 8 shows the GaN thus manufactured.
The measurement result of the emission spectrum of the system light emitting diode (sample C) is shown. FIG. 8 shows a p-type GaN layer 16 for comparison.
A GaN-based light-emitting diode (sample D) was manufactured which was different from sample C only by growing at a growth temperature of 990 ° C., and the result of measuring the emission spectrum of sample D is also shown.

FIG. 8 shows that the emission intensity of the sample C in which the p-type GaN layer 16 was grown at a growth temperature of 930 ° C. was p-type GaN.
It can be seen that the layer 16 is about five times as large as the sample D grown at the growth temperature of 990 ° C.

As described above, according to the first embodiment, the growth temperature of the GaInN active layer 14 and the p-type GaN layer 16 grown on the p-type AlGaN cap layer 15 is 930 ° C. Decomposition of InN from the layer 14 can be suppressed to prevent its degradation,
It is possible to prevent the emission intensity from the GaInN active layer 14 from deteriorating. Further, since the underlying surface is covered with the p-type AlGaN cap layer 15 before the growth of the p-type GaN layer 16, the deterioration of the GaInN active layer 14 can be more effectively prevented, and the light emission from the GaInN active layer 14 can be prevented. Deterioration of strength can be prevented more effectively. Thereby, a high-efficiency, high-output GaN-based light-emitting diode can be realized.

Next, a second embodiment of the present invention will be described. In the second embodiment, a case where the present invention is applied to the manufacture of a GaN-based semiconductor laser will be described. This GaN-based semiconductor laser has a SCH (Separa
te Confinement Heterostructure).

FIG. 9 is a sectional view for explaining a method of manufacturing the GaN-based semiconductor laser according to the second embodiment. FIG. 10 shows a growth sequence according to the second embodiment.

In the method of manufacturing the GaN-based semiconductor laser according to the second embodiment, as shown in FIGS. 9 and 10, first, at a temperature of, for example, 1050.degree. After performing thermal cleaning of the c-plane sapphire substrate 21, the c-plane sapphire substrate 21 is grown on the c-plane sapphire substrate 21 at a growth temperature of, for example, 530.degree.
A 5 nm GaN buffer layer 22 is grown. Next, after increasing the growth temperature to, for example, 990 ° C., an n-type GaN contact layer 23 having a thickness of, for example, 3 μm, an n-type AlGaN cladding layer 24 having a thickness of, for example, 0.5 μm, and 0.1 μm n-type GaN
The optical waveguide layers 25 are sequentially grown. Next, after lowering the growth temperature to, for example, 780 ° C., the thin n-type GaN optical waveguide layer 25
For example, a GaInN active layer 26 having a thickness of 3 nm, a p-type GaN optical waveguide layer 27 having a thickness of 0.1 μm, and a p-type AlGaN cap layer 28 having a thickness of 20 nm are sequentially grown. Next, after increasing the growth temperature to, for example, 930 ° C., a p-type AlGaN cladding layer 29 having a thickness of, for example, 0.5 μm and a p-type GaN contact layer 30 having a thickness of, for example, 0.5 μm are sequentially grown. Here, the n-type AlGaN cladding layer 24, the p-type AlGaN cap layer 28 and the p-type AlGaN
The Al composition ratio of the type AlGaN cladding layer 29 is, for example, 0.1.
15. The In composition ratio of the GaInN active layer 26 is 0.2. Here, n-type GaN contact layer 23, n-type AlG
n of the aN cladding layer 24 and the n-type GaN optical waveguide layer 25
As the type impurity, for example, Si is used, and as the dopant, for example, SiH ₄ is used. Further, a p-type GaN optical waveguide layer 27, a p-type AlGaN cap layer 28, a p-type AlG
aN cladding layer 29 and p-type GaN contact layer 30
For example, Mg is used as the p-type impurity, and Cp ₂ Mg is used as the dopant. Thereafter, a heat treatment is performed at 800 ° C. for 10 minutes in an N ₂ atmosphere, for example, to activate the p-type impurities.

Next, although not shown, after performing a predetermined patterning, a p-side electrode is formed on the p-type GaN contact layer 20 and the n-type GaN contact layer 23 is formed.
To a GaN-based semiconductor laser.

According to the second embodiment, GaInN
Active layer 26, p-type GaN optical waveguide layer 27 and p-type AlG
Since the growth temperature of the p-type AlGaN cladding layer 29 and the p-type GaN contact layer 30 grown on the aN cap layer 28 is 930 ° C., the decomposition of InN from the GaInN active layer 26 is suppressed to prevent its deterioration. Therefore, it is possible to prevent the emission intensity from the GaInN active layer 26 from deteriorating. Also, the p-type AlGaN cladding layer 2
Since the underlayer surface is covered with the p-type AlGaN cap layer 28 before growing the layer 9, the deterioration of the GaInN active layer 26 can be more effectively prevented, and the deterioration of the emission intensity from the GaInN active layer 26 can be more effectively prevented. Can be prevented. Thus, a GaN-based semiconductor laser with high efficiency and low threshold current density can be realized.

Although the embodiment of the present invention has been specifically described above, the present invention is not limited to the above embodiment, and various modifications based on the technical idea of the present invention are possible.

For example, the numerical values, the substrate, and the source gas described in the first and second embodiments are merely examples, and different numerical values, the substrate, the source gas, and the impurities may be used as needed. Specifically, instead of the c-plane sapphire substrates 1, 11, and 21, a GaN substrate or Si
A C substrate or the like may be used. GaInN active layer 1
As a Ga source for the growth of 4, 26, TMGa may be used instead of TEGa. Further, as the p-type impurity, for example, Zn may be used in addition to Mg. further,
The growth temperature of the GaInN active layers 14 and 26 may be generally in the range of 700 to 800C.

In the first and second embodiments described above, the case where the present invention is applied to the manufacture of a GaN-based semiconductor light-emitting device has been described.
The present invention may be applied to the manufacture of a GaN-based electron transit element such as a field-effect transistor (FET).

[0046]

As described above, according to the method for growing a semiconductor according to the present invention, the nitride-based nitride containing no In
The growth temperature of the IV group compound semiconductor layer is 980 or higher than the growth temperature of the nitride-based III-V compound semiconductor layer containing In.
° C or less, the nitride-based III-V containing In
Nitride containing no In on the group III compound semiconductor layer
Even when a group V compound semiconductor layer is grown, decomposition of InN from the nitride-based III-V compound semiconductor layer containing In can be suppressed, and deterioration thereof can be suppressed.

[Brief description of the drawings]

FIG. 1 shows Ga used for measuring the emission intensity in the present invention.
It is sectional drawing which shows the sample of an InN / GaN single quantum well structure.

FIG. 2 shows Ga used for measuring the emission intensity in the present invention.
It is sectional drawing which shows the sample of an InN / GaN single quantum well structure.

FIG. 3 is a schematic diagram showing an emission spectrum measured using the sample shown in FIG.

FIG. 4 is a schematic diagram showing an emission spectrum measured using the sample shown in FIG. 2;

FIG. 5 is a schematic diagram showing the heat treatment temperature dependence of the emission intensity measured using the samples shown in FIGS. 1 and 2.

FIG. 6 is a cross-sectional view for explaining the method for manufacturing the GaN-based light emitting diode according to the first embodiment of the present invention.

FIG. 7 is a schematic diagram illustrating a growth sequence according to the first embodiment of the present invention.

FIG. 8 is a schematic diagram illustrating an emission spectrum of a GaN-based light emitting diode manufactured according to the first embodiment of the present invention.

FIG. 9 is a cross-sectional view for explaining the method for manufacturing the GaN-based semiconductor laser according to the second embodiment of the present invention.

FIG. 10 is a schematic diagram illustrating a growth sequence according to a second embodiment of the present invention.

[Explanation of symbols]

1, 11, 21 ... c-plane sapphire substrate, 4 ... n
GaInN active layer, 6 ... n-type AlGaN cap layer, 14, 26 ... GaInN active layer, 15 ... p
-Type AlGaN cap layer, 16... P-type GaN layer, 2
9 ... p-type AlGaN cladding layer, 30 ... p-type G
aN contact layer

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shigeki Hashimoto 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (72) Inventor Yuki Asazuma 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo No. Sony Corporation (72) Inventor Katsunori Yanashima 6-7-35 Kita Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation

Claims (8)

[Claims] 1. A method for growing a semiconductor, wherein a nitride III-V compound semiconductor layer containing no In is vapor-phase grown on a nitride III-V compound semiconductor layer containing In. A growth temperature of the nitride-based III-V compound semiconductor layer containing no In is set to a growth temperature of the nitride-based III-V compound semiconductor layer containing In and 980 ° C. or less. . 2. A nitride III-V containing no In as described above.
Before vapor-growing the group III compound semiconductor layer, A grown at a growth temperature substantially equal to or lower than the growth temperature of the nitride-based III-V compound semiconductor layer containing In described above.
2. The method of growing a semiconductor according to claim 1, wherein the surface of the base is covered with a protective film made of lGaN. 3. The nitride III-V containing no In as described above.
The growth temperature of the group III compound semiconductor layer is 960 ° C. or higher than the growth temperature of the nitride-based III-V group compound semiconductor layer containing In.
2. The method for growing a semiconductor according to claim 1, wherein: 4. A nitride III-V containing no In as described above.
2. The method for growing a semiconductor according to claim 1, wherein the growth temperature of the group III compound semiconductor layer is 800 to 980 [deg.] C. 5. A nitride III-V containing no In as described above.
2. The method for growing a semiconductor according to claim 1, wherein the growth temperature of the group III compound semiconductor layer is 900 to 960 [deg.] C. 6. A nitride III-V containing no In as described above.
2. The method according to claim 1, wherein the growth temperature of the group III compound semiconductor layer is 930 to 960 [deg.] C. 7. The method according to claim 1, wherein the nitride-based III-V compound semiconductor layer containing In is a GaInN layer. 8. The nitride III-V containing no In as described above.
2. The method according to claim 1, wherein the group III compound semiconductor layer is a GaN layer or an AlGaN layer.