JP4389888B2 - Semiconductor growth method, semiconductor light emitting device manufacturing method, and semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a semiconductor growth method, a semiconductor light emitting device manufacturing method, and a semiconductor device manufacturing method, and in particular, higher than the growth temperature on a nitride-based III-V group compound semiconductor layer containing In, such as a GaInN layer. This is suitable for manufacturing a semiconductor device, for example, a semiconductor light emitting element, in which another nitride III-V compound semiconductor layer not containing In at the growth temperature needs to be grown.

  Nitride-based III-V group compound semiconductors such as GaN, AlGaN, and GaInN have a forbidden bandwidth ranging from 1.8 eV to 6.2 eV, and can emit light from infrared to ultraviolet. In recent years, research and development has been actively conducted.

  When a light emitting diode or a semiconductor laser is manufactured using this nitride III-V group compound semiconductor, GaN, AlGaN, GaInN, etc. are laminated in multiple layers, and the light emitting layer, that is, the active layer, is an n-type cladding layer and a p-type cladding. It is necessary to form an interstitial structure depending on the layer.

  The metal-organic chemical vapor deposition (MOCVD) method is used exclusively for the manufacture of such GaN-based semiconductor light-emitting elements. The basic technique for crystal growth by this MOCVD method is the introduction of a buffer layer by low-temperature growth. (See Non-Patent Documents 1 and 2) and p-type GaN layer growth technology (see Non-Patent Documents 3 and 4). Further, it has been reported that the growth of a GaInN layer used as an active layer is favorable under conditions of low temperature and low hydrogen (see Non-Patent Document 5). With the development of these basic technologies, GaN-based light-emitting diodes capable of emitting blue to green light and GaN-based semiconductor lasers capable of room-temperature pulse oscillation at an emission wavelength in the 400 nm range have been developed. It has become.

A standard process for crystal growth by MOCVD currently used for manufacturing a GaN-based semiconductor laser is as follows.
That is, first, the surface of the c-plane sapphire substrate is thermally cleaned by heat-treating the c-plane sapphire substrate in H ₂ gas at 1050 ° C. for 10 minutes. Next, after the substrate temperature is lowered to 510 ° C., a GaN buffer layer is grown on the c-plane sapphire substrate. Next, after raising the growth temperature to 1020 ° C., an n-type GaN contact layer, an n-type AlGaN cladding layer, and an n-type GaN optical waveguide layer are sequentially grown on the c-plane sapphire substrate. Next, after the growth temperature is lowered to 800 ° C., a GaInN active layer is grown on the c-plane sapphire substrate. Next, after raising the growth temperature to 1020 ° C., a p-type GaN optical waveguide layer, a p-type AlGaN cladding layer, and a p-type GaN contact layer are sequentially grown on the c-plane sapphire substrate.

Here, the growth temperature of the n-type GaN contact layer, the n-type AlGaN cladding layer, the n-type GaN optical waveguide layer, the p-type GaN optical waveguide layer, the p-type AlGaN cladding layer and the p-type GaN contact layer is set to 1020 ° C. This is because such a high temperature is suitable for the growth of a GaN-based semiconductor layer having good crystallinity. On the other hand, the reason why the growth temperature is lowered to 800 ° C. during the growth of the GaInN active layer is that the N dissociation pressure of GaInN is so large that it cannot be grown at the growth temperature of 1020 ° C. of GaN or AlGaN. .
Appl.Phys.Lett., 48,353 (1986) Jpn.J.Appl.Phys., 30, L1620 (1991) Jpn.J.Appl.Phys., 28, L2112 (1989) Jpn.J.Appl.Phys., 31, L139 (1992) J. Electronic Materials, 21 (2), 157 (1992)

However, the currently reported threshold current density in the GaN-based semiconductor laser manufactured by the process as described above is 3 to 10 kA / cm ^2, which is much larger than the theoretical expectation. There is a need for further reduction in threshold current density.

As a result of various studies to investigate the cause, the present inventor has not optimized the laser structure as a reason why the threshold current density of the GaN-based semiconductor laser manufactured by the above-described process is high. In other cases, the quality of the GaInN active layer, particularly the optical quality, was low, and the emission intensity from the GaInN layer was found to be considerably lower than theoretically expected. Then, as a result of studying the cause, when the growth temperature is increased to 1020 ° C. when growing the p-type GaN optical waveguide layer, the p-type AlGaN cladding layer, and the p-type GaN contact layer after the growth of the GaInN active layer In addition, it has been found that degradation occurs due to decomposition of InN from the GaInN active layer. Therefore, in order to reduce the threshold current density of the GaN semiconductor laser, it is important to suppress the deterioration of the GaInN active layer.
The above is about the deterioration of the GaInN active layer, but the same deterioration can occur in all nitride-based III-V group compound semiconductor layers containing In.

  Accordingly, an object of the present invention is to provide another nitride-based III-V compound containing no In at a growth temperature higher than the growth temperature on a nitride-based III-V compound semiconductor layer containing In, such as a GaInN layer. Semiconductor growth method, semiconductor light emitting device manufacturing method, and semiconductor device manufacturing method capable of preventing deterioration of nitride-based III-V compound semiconductor layer containing In when it is necessary to grow a semiconductor layer Is to provide.

In order to achieve the above object, the present invention provides:
A protective film made of AlGaN is vapor-phased on the nitride-based III-V compound semiconductor layer containing In at a growth temperature substantially equal to or lower than the growth temperature of the nitride-based III-V compound semiconductor layer containing In. In the semiconductor growth method, the nitride-based III-V compound semiconductor layer not containing In is grown on the protective film by vapor phase growth.
N ₂ is used as a carrier gas for the vapor phase growth of the nitride-based III-V compound semiconductor layer and the protective film containing In, and the nitride-based III-V compound semiconductor layer not containing In is vapor-grown. In this case, a mixed gas of H ₂ and N ₂ is used as the carrier gas.
The invention also provides
In the method of growing a semiconductor in which an active layer containing In is vapor-grown and a p-type AlGaN cladding layer is vapor-grown on the active layer,
A feature is that N ₂ is used as a carrier gas for vapor-phase growth of the active layer, and a mixed gas of H ₂ and N ₂ is used as a carrier gas for vapor-phase growth of the p-type AlGaN cladding layer. To do.
The invention also provides
A protective film made of AlGaN is vapor-phased on the nitride-based III-V compound semiconductor layer containing In at a growth temperature substantially equal to or lower than the growth temperature of the nitride-based III-V compound semiconductor layer containing In. In the method of manufacturing a semiconductor light emitting device, the nitride-based III-V compound semiconductor layer not containing In is grown on the protective film by vapor phase growth.
N ₂ is used as a carrier gas for the vapor phase growth of the nitride-based III-V compound semiconductor layer and the protective film containing In, and the nitride-based III-V compound semiconductor layer not containing In is vapor-grown. In this case, a mixed gas of H ₂ and N ₂ is used as the carrier gas.
The invention also provides
In the method for manufacturing a semiconductor light emitting device, an active layer containing In is vapor-phase grown, and a p-type AlGaN cladding layer is vapor-grown on the active layer.
A feature is that N ₂ is used as a carrier gas for vapor-phase growth of the active layer, and a mixed gas of H ₂ and N ₂ is used as a carrier gas for vapor-phase growth of the p-type AlGaN cladding layer. To do.
The invention further provides
A protective film made of AlGaN is vapor-phased on the nitride-based III-V compound semiconductor layer containing In at a growth temperature substantially equal to or lower than the growth temperature of the nitride-based III-V compound semiconductor layer containing In. In the method of manufacturing a semiconductor device in which a nitride-based III-V group compound semiconductor layer not containing In is grown on the protective film by vapor phase growth,
N ₂ is used as a carrier gas for the vapor phase growth of the nitride-based III-V compound semiconductor layer and the protective film containing In, and the nitride-based III-V compound semiconductor layer not containing In is vapor-grown. In this case, a mixed gas of H ₂ and N ₂ is used as the carrier gas.

  In the present invention, preferably, before the nitride-based III-V compound semiconductor layer not containing In is vapor-phase grown, the growth temperature of the nitride-based III-V compound semiconductor layer containing In is approximately equal to the growth temperature. Alternatively, the surface of the base is covered with a protective film made of AlGaN vapor-phase grown at a lower growth temperature. In this case, the underlying nitride-based III-V compound semiconductor layer containing In is covered directly or indirectly by the protective film made of AlGaN, so that the nitride-based III-V group containing In. Since the decomposition of InN in the compound semiconductor layer can be effectively suppressed, the deterioration can be prevented more effectively, or the growth temperature of the nitride-based III-V compound semiconductor layer containing no In can be increased. Can be set.

  In this invention, before the surface of the base is covered with a protective film made of AlGaN before vapor-phase growth of the nitride-based III-V compound semiconductor layer not containing In, the nitride-based nitride containing no In The growth temperature of the group III-V compound semiconductor layer is set to a growth temperature of the nitride-based group III-V compound semiconductor layer containing In or higher and 960 ° C. or lower.

  In the present invention, the deterioration of the surface morphology and carrier concentration of the nitride-based III-V compound semiconductor layer not containing In, while preventing the deterioration of the nitride-based III-V compound semiconductor layer containing In, is particularly positive. In order to prevent a decrease in the pore concentration, the growth temperature of the nitride-based III-V compound semiconductor layer not containing In is 800 to 980 ° C., preferably 900 to 960 ° C., more preferably 930 to 960 ° C. To do.

In the present invention, the nitride-based III-V compound semiconductor layer is specifically composed of N and at least one group III element selected from the group consisting of Al, Ga, In and B. An example of the nitride-based III-V group compound semiconductor layer containing In is a GaInN layer, and an example of not containing In is a GaN layer, an AlGaN layer, or the like.
In the present invention, the metal-organic chemical vapor deposition (MOCVD) method is typically used for the growth of the nitride III-V compound semiconductor layer, but the molecular beam epitaxy (MBE) method may be used. Good.
According to the present invention configured as described above, the growth temperature of the nitride-based III-V compound semiconductor layer containing no In is greater than or equal to the growth temperature of the nitride-based III-V compound semiconductor layer containing In 980. Therefore, even if a nitride III-V compound semiconductor layer not containing In is grown on the nitride III-V compound semiconductor layer containing In, the nitride III III containing In Decomposition of InN from the -V group compound semiconductor layer can be suppressed, and deterioration thereof can be suppressed.

  According to the present invention, since the growth temperature of the nitride-based III-V compound semiconductor layer not containing In is set to be not less than the growth temperature of the nitride-based III-V compound semiconductor layer containing In and not more than 980 ° C. Even if a nitride III-V compound semiconductor layer not containing In is grown on the nitride III-V compound semiconductor layer containing In, the nitride III-V compound semiconductor layer containing In can be grown. Decomposition of InN can be suppressed, and deterioration thereof can be suppressed.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Before describing the embodiment of the present invention, first, the results of examining the influence of the heat treatment on the optical quality of the GaInN active layer, specifically, the emission intensity when the heat treatment is performed after the growth of the GaInN active layer will be described. To do. In this experiment, two samples having a GaInN / GaN single quantum well structure as shown in FIGS. 1 and 2, respectively, were used. For convenience, the sample shown in FIG. 1 is called sample A, and the sample shown in FIG. A method for producing Sample A and Sample B is as follows.

In order to produce the sample A shown in FIG. 1, first, the c-plane sapphire substrate 1 is placed in a reaction tube of a MOCVD apparatus (not shown), and then a mixed gas of, for example, H ₂ and N ₂ is used as a carrier gas in the reaction tube. Then, the surface of the c-plane sapphire substrate 1 is thermally cleaned by performing heat treatment at 1050 ° C. for 10 minutes. Next, after lowering the substrate temperature to 530 ° C., trimethylgallium (TMGa, Ga (CH ₃ ) ₃ ) as a Ga raw material and ammonia (NH ₃ ) as an N raw material are supplied into the reaction tube, and a c-plane sapphire substrate A GaN buffer layer 2 having a thickness of about 25 nm is grown on 1. Next, after stopping the supply of TMGa into the reaction tube and continuing the supply of NH ₃ as it is, the growth temperature was raised to 990 ° C., then TMGa and the n-type impurity (donor impurity) Si of Silane (SiH ₄ ) as a dopant is supplied, and a 2 μm thick Si-doped n-type GaN layer 3 is grown.

Next, the supply of TMGa into the reaction tube is stopped and the growth temperature is lowered to 780 ° C. Then, TMGa is supplied into the reaction tube to grow the n-type GaN layer 3 thinly. Since this n-type GaN layer 3 may contaminate the surface of the underlying n-type GaN layer 3 while lowering the growth temperature, this thin n-type GaN layer 3 is grown immediately before the growth of the n-type GaInN active layer 4 to be grown next. The type GaN layer 3 is grown, and the n-type GaInN active layer 4 is grown on a clean surface. Next, with the growth temperature kept at 780 ° C., triethylgallium (TEGa, Ga (C ₂ H ₅ ) ₃ ) as a Ga source and In source as well as NH ₃ as an N source in the reaction tube Trimethylindium (TMIn, In (CH ₃ ) ₃ ) is supplied to grow a Si-doped n-type GaInN active layer 4 having a thickness of about 3 nm. Here, the In composition ratio of the n-type GaInN active layer 4 is 0.2.

Next, while maintaining the growth temperature at 780 ° C. as it is, the supply of TMIn into the reaction tube is stopped, the Ga raw material is switched to TMGa, and a Si-doped n-type GaN layer 5 having a thickness of 100 nm is grown.
Thus, a sample A having a GaInN / GaN single quantum well structure is produced.

  In the method for producing Sample B shown in FIG. 2, after the n-type GaInN active layer 4 is grown, the Si-doped n-type GaN layer 5 having a thickness of 80 nm and a thickness of 20 nm are maintained at a growth temperature of 780 ° C. This is the same as the manufacturing method of the sample A except that the Si-doped n-type AlGaN cap layer 6 is sequentially grown. Here, the Al composition ratio of the n-type AlGaN cap layer 6 is 0.15.

Sample A and Sample B produced as described above were heat-treated in a reaction tube of an MOCVD apparatus in an NH ₃ atmosphere at temperatures of 800 ° C., 900 ° C., and 990 ° C. for 1 hour. Then, using these Sample A and Sample B, the emission spectrum from the n-type GaInN active layer 4 was measured at room temperature. 3 and 4 show the measurement results of the emission spectra of Sample A and Sample B, respectively. The temperatures of Sample A and Sample B were measured by measuring their surface temperatures through a quartz reaction tube with a radiation thermometer.

  3 and FIG. 4, light emission is observed in the vicinity of a wavelength of 400 nm in both the sample A and the sample B. Among them, for sample A, the emission intensity is almost the same as that before the heat treatment until the heat treatment temperature is 900 ° C., but is reduced to about 1/20 before the heat treatment when the heat treatment temperature is 990 ° C. For sample B, the light emission intensity is almost the same as before sample heat treatment up to 900 ° C. as in sample A, but when the heat treatment temperature is 990 ° C., it decreases to about ½ before heat treatment. However, the decrease in emission intensity is small.

FIG. 5 shows the results of measuring the heat treatment temperature dependence of the emission intensity of Sample A and Sample B. However, the heat treatment was performed in an NH ₃ atmosphere for 1 hour by changing the temperature to 800 ° C., 900 ° C., 930 ° C., 960 ° C., and 990 ° C. The emission intensity was measured at room temperature and 77 K (liquid nitrogen temperature).
From FIG. 5, it can be seen well that the emission intensity of both the sample A and the sample B decreases as the heat treatment temperature (T) increases. Among these, for sample A, when the heat treatment temperature exceeds 960 ° C., the emission intensity rapidly decreases. On the other hand, for sample B, the decrease in emission intensity with increasing heat treatment temperature is more gradual than that in sample A, and the heat treatment temperature at which the emission intensity is the same as that of sample A heat-treated at 960 ° C. is about 980 ° C. It is about 20 ° C. higher than Sample A.

  As described above, the decrease in emission intensity with respect to the increase in the heat treatment temperature is smaller in the sample B than in the sample A. In the sample B, the n-type AlGaN cap layer 6 is grown on the n-type GaN layer 5. Because. That is, this n-type AlGaN cap layer 6 prevents the n-type GaInN active layer 4 from deteriorating. Here, considering that AlGaN has a higher equilibrium vapor pressure of N than GaN, it is considered that the degradation of the n-type GaInN active layer 4 involves diffusion of vacancy defects from the surface to the inside.

Now, a first embodiment of the present invention will be described on the premise of the above. In the first embodiment, the case where the present invention is applied to the manufacture of a GaN-based light emitting diode will be described.
FIG. 6 is a cross-sectional view for explaining the method of manufacturing the GaN-based light emitting diode according to the first embodiment. FIG. 7 shows a growth sequence in the first embodiment.

In the method for manufacturing the GaN-based light emitting diode according to the first embodiment, as shown in FIGS. 6 and 7, the c-plane sapphire substrate 11 is formed at 1050 ° C., for example, in the same manner as in the manufacture of the sample A and the sample B. After performing the thermal cleaning, a GaN buffer layer 12 having a thickness of, for example, 25 nm is grown on the c-plane sapphire substrate 11 at a growth temperature of, for example, 530 ° C. Next, after raising the growth temperature to 990 ° C., for example, an n-type GaN layer 13 having a thickness of 3 μm, for example, is grown on the GaN buffer layer 12. Next, after the growth temperature is lowered to, for example, 780 ° C., a thin n-type GaN layer 13, for example, a GaInN active layer 14 having a thickness of 3 nm and a p-type AlGaN cap layer 15 having a thickness of 20 nm, for example, are sequentially grown. Here, the In composition ratio of the GaInN active layer 14 is 0.2, for example, and the Al composition ratio of the p-type AlGaN cap layer 15 is 0.15, for example. Next, after raising the growth temperature to 930 ° C., for example, the p-type GaN layer 16 having a thickness of 1.5 μm, for example, is grown. The growth time of the p-type GaN layer 16 is about 1 hour, for example. Here, for example, Si is used as the n-type impurity of the n-type GaN layer 13, and SiH ₄ is used as the dopant. Further, for example, Mg is used as the p-type impurity (acceptor impurity) of the p-type AlGaN cap layer 15 and the p-type GaN layer 16, and biscyclopentadienyl magnesium (Cp ₂ Mg) is used as the dopant. Thereafter, in order to activate the p-type impurity, for example, heat treatment is performed at 800 ° C. for 10 minutes in an N ₂ atmosphere.

  Next, although not shown in the figure, after performing predetermined patterning, a p-side electrode is formed on the p-type GaN layer 16, and the n-side GaN layer 13 is contacted with the n-side electrode so that a GaN-based light emitting diode is formed. To manufacture.

FIG. 8 shows the measurement result of the emission spectrum of the GaN-based light emitting diode (sample C) manufactured as described above. In FIG. 8, for comparison, a GaN-based light emitting diode (sample D) that differs from sample C only by growing the p-type GaN layer 16 at a growth temperature of 990 ° C. is manufactured. The measurement results are also shown.
From FIG. 8, the emission intensity of the sample C in which the p-type GaN layer 16 is grown at a growth temperature of 930 ° C. is about 5 times that of the sample D in which the p-type GaN layer 16 is grown at a growth temperature of 990 ° C. It is clear that

  As described above, according to the first embodiment, the growth temperature of the p-type GaN layer 16 grown on the GaInN active layer 14 and the p-type AlGaN cap layer 15 is set to 930 ° C. Therefore, from the GaInN active layer 14 The decomposition of InN can be suppressed and its deterioration can be prevented, and the deterioration of the emission intensity from the GaInN active layer 14 can be prevented. Further, since the base surface is covered with the p-type AlGaN cap layer 15 before the p-type GaN layer 16 is grown, the deterioration of the GaInN active layer 14 can be prevented more effectively, and light emission from the GaInN active layer 14 can be prevented. It is possible to prevent the deterioration of strength more effectively. Thereby, a high-efficiency, high-power GaN-based light emitting diode can be realized.

Next explained is the second embodiment of the invention. In the second embodiment, the case where the present invention is applied to the manufacture of a GaN-based semiconductor laser will be described. This GaN semiconductor laser has an SCH (Separate Confinement Heterostructure) structure.
FIG. 9 is a cross-sectional view for explaining a GaN semiconductor laser manufacturing method according to the second embodiment. FIG. 10 shows a growth sequence in the second embodiment.

In the method of manufacturing the GaN-based semiconductor laser according to the second embodiment, as shown in FIGS. 9 and 10, first, in the same manner as in the preparation of the sample A and the sample B, for example, c-plane sapphire at 1050 ° C. After the substrate 21 is thermally cleaned, a GaN buffer layer 22 having a thickness of, for example, 25 nm is grown on the c-plane sapphire substrate 21 at a growth temperature of, for example, 530 ° C. Next, after the growth temperature is raised to 990 ° C., for example, an n-type GaN contact layer 23 having a thickness of 3 μm, for example, an n-type AlGaN cladding layer 24 having a thickness of 0.5 μm, and a thickness, for example, on the GaN buffer layer 22. An n-type GaN optical waveguide layer 25 having a thickness of 0.1 μm is sequentially grown. Next, after the growth temperature is lowered to, for example, 780 ° C., a thin n-type GaN optical waveguide layer 25, for example, a GaInN active layer 26 having a thickness of 3 nm, for example, a p-type GaN optical waveguide layer 27 having a thickness of 0.1 μm, and a thickness, for example, A 20 nm thick p-type AlGaN cap layer 28 is sequentially grown. Next, after raising the growth temperature to 930 ° C., for example, a p-type AlGaN cladding layer 29 having a thickness of 0.5 μm and a p-type GaN contact layer 30 having a thickness of 0.5 μm, for example, are sequentially grown. Here, the Al composition ratio of the n-type AlGaN cladding layer 24, the p-type AlGaN cap layer 28, and the p-type AlGaN cladding layer 29 is, for example, 0.15, and the In composition ratio of the GaInN active layer 26 is 0.2. Here, for example, Si is used as the n-type impurity of the n-type GaN contact layer 23, the n-type AlGaN cladding layer 24, and the n-type GaN optical waveguide layer 25, and SiH ₄ is used as the dopant. Further, for example, Mg is used as the p-type impurity of the p-type GaN optical waveguide layer 27, the p-type AlGaN cap layer 28, the p-type AlGaN cladding layer 29, and the p-type GaN contact layer 30, and Cp ₂ Mg is used as the dopant. Use. Thereafter, in order to activate the p-type impurity, for example, heat treatment is performed at 800 ° C. for 10 minutes in an N ₂ atmosphere.

Next, although not shown in the drawing, after performing predetermined patterning, a p-side electrode is formed on the p-type GaN contact layer 20 and the n-side electrode is brought into contact with the n-type GaN contact layer 23 to thereby form a GaN-based semiconductor. Manufacturing a laser.
According to the second embodiment, the growth temperatures of the p-type AlGaN cladding layer 29 and the p-type GaN contact layer 30 grown on the GaInN active layer 26, the p-type GaN optical waveguide layer 27, and the p-type AlGaN cap layer 28 are set. Since the temperature is set to 930 ° C., the decomposition of InN from the GaInN active layer 26 can be suppressed and the deterioration thereof can be prevented, and the deterioration of the emission intensity from the GaInN active layer 26 can be prevented. In addition, since the base surface is covered with the p-type AlGaN cap layer 28 before the p-type AlGaN cladding layer 29 is grown, the deterioration of the GaInN active layer 26 can be prevented more effectively, and from the GaInN active layer 26, It is possible to more effectively prevent the emission intensity from deteriorating. As a result, a GaN-based semiconductor laser with high efficiency and low threshold current density can be realized.

  As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, The various deformation | transformation based on the technical idea of this invention is possible.

  For example, the numerical values, the substrate, and the source gas mentioned in the first and second embodiments are merely examples, and different numerical values, the substrate, the source gas, and the impurities may be used as necessary. Specifically, a GaN substrate, a SiC substrate, or the like may be used instead of the c-plane sapphire substrates 1, 11, and 21. Further, TMGa may be used in place of TEGa as a Ga material for growing the GaInN active layers 14 and 26. In addition to Mg, for example, Zn may be used as the p-type impurity. Furthermore, the growth temperature of the GaInN active layers 14 and 26 may generally be in the range of 700 to 800 ° C.

  In the first and second embodiments described above, the case where the present invention is applied to the manufacture of a GaN-based semiconductor light emitting device has been described. However, the present invention relates to a GaN-based field effect transistor (FET) or the like. You may apply to manufacture of an electronic traveling element.

It is sectional drawing which shows the sample of the GaInN / GaN single quantum well structure used for the measurement of emitted light intensity in this invention. It is sectional drawing which shows the sample of the GaInN / GaN single quantum well structure used for the measurement of emitted light intensity in this invention. It is a basic diagram which shows the emission spectrum measured using the sample shown in FIG. It is a basic diagram which shows the emission spectrum measured using the sample shown in FIG. It is a basic diagram which shows the heat processing temperature dependence of the emitted light intensity measured using the sample shown in FIG. 1 and FIG. It is sectional drawing for demonstrating the manufacturing method of the GaN-type light emitting diode by 1st Embodiment of this invention. It is a basic diagram which shows the growth sequence in 1st Embodiment of this invention. It is a basic diagram which shows the emission spectrum of the GaN-type light emitting diode manufactured in 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the GaN-type semiconductor laser by 2nd Embodiment of this invention. It is a basic diagram which shows the growth sequence in 2nd Embodiment of this invention.

Explanation of symbols

1, 11, 21 ... c-plane sapphire substrate, 4 ... n-type GaInN active layer, 6 ... n-type AlGaN cap layer, 14, 26 ... GaInN active layer, 15 ... p-type AlGaN Cap layer, 16 ... p-type GaN layer, 29 ... p-type AlGaN cladding layer, 30 ... p-type GaN contact layer

Claims (5)

A protective film made of AlGaN is vapor-phased on the nitride-based III-V compound semiconductor layer containing In at a growth temperature substantially equal to or lower than the growth temperature of the nitride-based III-V compound semiconductor layer containing In. In the semiconductor growth method, the nitride-based III-V compound semiconductor layer not containing In is grown on the protective film by vapor phase growth.
N ₂ is used as a carrier gas for vapor phase growth of the nitride-based III-V group compound semiconductor layer containing In and the protective film, and the nitride-based III-V group compound semiconductor layer containing no In is removed. A semiconductor growth method characterized in that a mixed gas of H ₂ and N ₂ is used as a carrier gas for phase growth. In the method of growing a semiconductor in which an active layer containing In is vapor-grown and a p-type AlGaN cladding layer is vapor-grown on the active layer,
N ₂ was used as a carrier gas for vapor phase growth of the active layer, and a mixed gas of H ₂ and N ₂ was used as a carrier gas for vapor growth of the p-type AlGaN cladding layer. A semiconductor growth method. A protective film made of AlGaN is vapor-phased on the nitride-based III-V compound semiconductor layer containing In at a growth temperature substantially equal to or lower than the growth temperature of the nitride-based III-V compound semiconductor layer containing In. In the method of manufacturing a semiconductor light emitting device, the nitride-based III-V compound semiconductor layer not containing In is grown on the protective film by vapor phase growth.
N ₂ is used as a carrier gas for vapor phase growth of the nitride-based III-V group compound semiconductor layer containing In and the protective film, and the nitride-based III-V group compound semiconductor layer containing no In is removed. A method for manufacturing a semiconductor light emitting device, wherein a mixed gas of H ₂ and N ₂ is used as a carrier gas for phase growth. In the method for manufacturing a semiconductor light emitting device, an active layer containing In is vapor-phase grown, and a p-type AlGaN cladding layer is vapor-grown on the active layer.
N ₂ was used as a carrier gas for vapor phase growth of the active layer, and a mixed gas of H ₂ and N ₂ was used as a carrier gas for vapor growth of the p-type AlGaN cladding layer. A method for producing a semiconductor light emitting device. A protective film made of AlGaN is vapor-phased on the nitride-based III-V compound semiconductor layer containing In at a growth temperature substantially equal to or lower than the growth temperature of the nitride-based III-V compound semiconductor layer containing In. In the method of manufacturing a semiconductor device in which a nitride-based III-V group compound semiconductor layer not containing In is grown on the protective film by vapor phase growth,
N ₂ is used as a carrier gas for vapor phase growth of the nitride-based III-V group compound semiconductor layer containing In and the protective film, and the nitride-based III-V group compound semiconductor layer containing no In is removed. A method of manufacturing a semiconductor device, wherein a mixed gas of H ₂ and N ₂ is used as a carrier gas for phase growth.

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