JP2000216125A - Substrate treating apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress the deposition of contaminants to a substrate. SOLUTION: A substrate W is moved vertically between the interior of a water washing tank and above this tank by a lift mechanism 40. A discharge nozzle 20 continues feeding pure water in the washing tank having a side-wall 15a intersecting the substrate main surface. Liq. drain holes 31 are arranged at the same pitch as the hold spacing of the substrates W held by the lift mechanism 40 near the top end of the sidewall 15a over which pure water overflows. By the drain holes 31, pure water located at both sides of the main surface of each substrate W is prior drained out of the tank. As the result, contaminants floating between the substrates W can be drained efficiently from the tank to suppress the deposition of the contaminants to the substrates W.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method in which a single or a plurality of semiconductor substrates, a glass substrate for a liquid crystal display, a glass substrate for a photomask, a substrate for an optical disk, etc. The present invention relates to a substrate processing apparatus that performs immersion processing by immersion.

[0002]

2. Description of the Related Art Conventionally, a surface treatment such as etching with a chemical solution and cleaning treatment with pure water is sequentially performed on a substrate in a processing tank in a substrate processing apparatus, thereby achieving a series of processes. As such a substrate processing apparatus, a so-called one-bath type apparatus in which a substrate is put into one processing tank, and the processing proceeds by sequentially replacing the processing liquid in the processing tank with a chemical solution and pure water, There is a so-called multi-tank type device that includes a plurality of dedicated processing tanks for storing a chemical solution or pure water, and performs processing by sequentially transporting substrates to the plurality of processing tanks.

[0003] In a multi-tank type substrate processing apparatus, a substrate is put into a chemical solution tank for storing a chemical solution to remove impurities adhering to the substrate, and then the substrate is placed in a washing tank for storing pure water. A series of processes is achieved by repeating the process of throwing in and washing with water.

[0004]

However, in such a series of processing steps, there is a problem that contaminants such as particles adhere to the substrate. In particular, after the substrate is etched in a chemical solution tank storing hydrofluoric acid (HF) as a chemical solution, the substrate is put into a washing tank and the washing process is performed. May adhere.

[0005] Such vertical streak-like particles 101
It is considered that it adheres to the substrate W as follows.
That is, when the substrate W having various impurities attached to its surface is put into a chemical solution tank storing hydrofluoric acid, the impurities are dissolved out by the hydrofluoric acid and Si is exposed on a part of the surface of the substrate W, and the substrate W On the surface of W, a hydrophobic portion of Si and SiO
The two hydrophilic portions coexist. The dissolved impurities become contaminants in the form as they are or by some kind of chemical reaction, and flow to the surface of the chemical solution by the upward flow of the chemical solution (upflow) in the chemical solution tank. Then, the contaminants float on the surface of the chemical solution, that is, the gas-liquid interface.

After the etching process is completed, the substrate W is lifted out of the chemical solution tank. At this time, the substrate W naturally passes through the gas-liquid interface, and contaminants floating on the surface of hydrofluoric acid are removed from the substrate W. It adheres to.

After that, the substrate W is put into a washing tank for storing pure water and subjected to a washing process. When the substrate W is immersed in pure water, the contaminants attached at the end of the etching process are separated from the substrate W, but the contaminants become new contaminants in the same form or by some chemical reaction, In the same manner as above, the water will float on the pure water surface by the upflow. Then, when the substrate W is lifted out of the rinsing tank after the rinsing process, new contaminants adhere to the surface of the substrate W again, and the vertical streak particles 101 as shown in FIG. 8 are generated.

Although the above description has been given of the etching treatment with hydrofluoric acid, the same problem also occurs in the surface treatment with other chemicals and the subsequent water washing treatment. Also, in the one-bath type apparatus, the same problem occurs because the substrate W passes through the gas-liquid interface after the final rinsing process.

In other words, the processing liquid (hereinafter, referred to as “processing liquid”, which includes “chemical liquid tank” and “washing tank”) stored in the processing tank (hereinafter, referred to as “processing liquid”) includes “ In a substrate processing apparatus in which the substrate passes through the gas-liquid interface of "chemical liquid" and "pure water"), contaminants separated from the substrate and contaminants newly generated in the processing liquid are processed by upflow. The liquid floats on the liquid surface, and contaminants adhere to the substrate when the substrate passes over the surface of the processing liquid.

[0010] The present invention has been made in view of the above problems, and has as its object to provide a substrate processing apparatus capable of suppressing adhesion of contaminants to a substrate.

[0011]

According to a first aspect of the present invention, there is provided a substrate processing apparatus for performing an immersion process by immersing a substrate in a processing solution.
A processing tank in which the processing liquid is stored and the substrate is immersed,
(b) a processing liquid supply means provided at the bottom of the processing tank, for supplying a processing liquid into the processing tank, and (c) holding the substrate, inside the processing tank and above the processing tank. Elevating means for elevating and lowering the substrate between them, wherein a plurality of liquid outlets are provided in a side wall intersecting at least a plane including a main surface of the plurality of substrates held by the elevating means in the processing tank. The plurality of drain outlets are arranged near the upper end of the side wall where the processing liquid overflows, at the same pitch as the holding interval of the plurality of substrates held by the lifting means. .

[0012]

Embodiments of the present invention will be described below in detail with reference to the drawings.

First, the overall configuration of the substrate processing apparatus according to the present invention will be briefly described. The substrate processing apparatus described here is a multi-tank type substrate processing apparatus. FIG. 1 is a schematic front view showing an example of the substrate processing apparatus according to the present invention. FIG.
In each of the following drawings, an XYZ orthogonal coordinate system is appropriately attached in order to clarify the directional relationship. The substrate processing apparatus 100 includes chemical baths CB1 and CB2 and a washing bath WB
1, WB2, FR, a drying unit SD, and a substrate transport robot TR for transporting a substrate. The substrate processing apparatus 100 has, at both ends thereof, a loader section LD for mounting a cassette C containing unprocessed substrates W and an unloader section ULD for mounting a cassette C for storing processed substrates W.
And

The chemical liquid tanks CB1 and CB2 are tanks capable of storing a chemical liquid such as sulfuric acid, ammonia, hydrochloric acid, hydrofluoric acid, hydrogen peroxide or a mixture thereof. In the example considered here, hydrofluoric acid is used. This is a processing tank for storing and performing an etching process on the substrate. Also, the washing tanks WB1, WB
Reference numeral 2 denotes a treatment tank that contains pure water and cleans hydrofluoric acid attached to the substrate W. The washing tank FR is also a washing tank containing pure water, and is mainly used for finishing washing. Further, the drying unit SD is a processing unit that removes water droplets attached to the substrate W while rotating the substrate W, and dries.

The substrate transport robot TR is movable in the horizontal and vertical directions, pays out unprocessed substrate groups (lots) from the loader unit LD, and transfers the lots among the processing tanks according to a predetermined processing procedure. A robot that circulates and transfers the processed lot to the unloader unit ULD. The substrate transport robot TR includes a pair of openable and closable hands 1, and a plurality of grooves for holding the substrate W are provided in the hand 1 in parallel at a constant pitch (not shown). ), The lot is held by the plurality of grooves. When the substrate transport robot TR receives the lot from the loader section LD, the pair of hands 1 of the substrate transport robot TR grips the lot raised from the cassette C by a holder (not shown) provided below the cassette C. It is done by doing. In the case of transferring the lot to the unloader unit ULD, the lot is transferred from the hand 1 to a holder (not shown), and the lot is stored in the cassette C by descending the holder. You.

Next, the configuration of a processing tank provided in the substrate processing apparatus 100 will be described. Here, the washing tank WB1 will be described as an example of the processing tank, but other processing tanks,
That is, the chemical solution tanks CB1, CB2 and the washing tanks WB2, F
The same applies to R.

FIG. 2 is a front view showing a configuration of a main part of the washing tank WB1, and FIG. 3 is a side view showing a main part of the washing tank WB1. The substrate processing apparatus 100 is provided with a discharge nozzle 20 and an elevating mechanism 40 in association with the washing tank WB1.

The discharge nozzles 20 are provided on both sides of the bottom of the washing tank WB1 and supply pure water into the washing tank WB1. The discharge nozzle 20 is a cylindrical nozzle that extends along the longitudinal direction (X direction) of the washing tank WB1, and includes a plurality of circular discharge holes 20a. Further, the discharge nozzle 20 is connected to a pure water supply source 25 outside the washing tank WB1, and can receive pure water from the pure water supply source 25.

The pure water supplied from the pure water supply source 25 is discharged from the discharge hole 20a of the discharge nozzle 20 into the washing tank WB1. Here, the discharge hole 20a is provided toward the center bottom of the washing tank WB1, and the pure water discharged from the discharge nozzles 20 on both sides flows in parallel with the bottom wall of the washing tank WB1, and eventually the center of the bottom of the washing tank WB1. Collision at, then washing tank W
A flow (laminar flow) of pure water upward is formed near the center of B1. In addition, the pure water supplied from the discharge nozzle 20 is configured to overflow sequentially from the upper part of the washing tank WB1, and the state at this time will be described later. Further, one slit-shaped discharge hole may be provided in place of the plurality of circular discharge holes 20a.

The lifting mechanism 40 is a mechanism for immersing a plurality of substrates W in pure water stored in the washing tank WB1. The lifting mechanism 40 includes a lifter 41 and a lifter arm 42.
And three holding units 43, 44, and 45 for holding the substrate W. In each of the three holding portions 43, 44, and 45, a plurality of holding grooves into which the outer edge of the substrate W fits and holds the substrate W in an upright posture are provided at predetermined intervals in the X direction. I have. The three holding portions 43, 44, 45 are fixed to a lifter arm 42, and the lifter arm 42 is provided so as to be vertically movable by the lifter 41.

With such a configuration, the lifting mechanism 40 is
A position where a plurality of substrates W, which are arranged and held in parallel in the X direction at predetermined intervals by book holding portions 43, 44, and 45, are immersed in pure water stored in a washing tank WB1 (solid line position in FIG. 2). And the substrate transfer robot T above the washing tank WB1
The position where the substrate is transferred to R (the position indicated by the two-dot chain line in FIG. 2).
It can be raised and lowered between. The lifter 41
As the mechanism for raising and lowering the lifter arm 42, various mechanisms such as a feed screw mechanism using a ball screw and a belt mechanism using a pulley and a belt can be adopted.

In the washing tank WB1, a side wall extending in the X direction perpendicular to the main surface of the substrate W held by the elevating mechanism 40 and immersed in the washing tank WB1 (hereinafter referred to as a side wall orthogonal to the main surface of the substrate). A plurality of drain ports 31 are opened in 15a (see FIG. 3).

A plurality of the drain ports 30 opened in the side wall 15 a orthogonal to the main surface of the washing tank WB 1 are arranged at the same pitch as the holding interval of the substrates W held by the elevating mechanism 40.

Further, the side wall 1 orthogonal to the main surface of the substrate of the washing tank WB1 is provided.
The drainage port 31 provided in the 5a is provided near the upper end 30a where the processing liquid overflows on the side wall 15a orthogonal to the main surface of the substrate, and is held by at least the elevating mechanism 40 and immersed in the processing tank 15. It is provided at a position higher than the upper edge of the substrate.

In the substrate processing apparatus 100 of the present embodiment, the drain port 31 opened on the substrate main surface orthogonal side wall 15a of the washing tank WB1 is located at the next position at the upper end 30a of the substrate main surface orthogonal side wall 15a. It is arranged below. That is, at the upper end 30a of the substrate main surface orthogonal side wall 15a, the plane including the main surface of the substrate W held by the elevating mechanism 40 and immersed in the processing tank 15 is formed into the substrate main surface orthogonal side wall 15a.
Is disposed below both sides of a position intersecting with the upper end 30a of the first member.

In the substrate processing apparatus of the present embodiment, the washing tank WB1 is provided with the side wall 15a orthogonal to the main surface of the substrate.
Side walls extending in the Y direction perpendicular to the main surface of the substrate W
15b and bottom wall 15c
However, a plurality of drain ports 31 are also formed on the side wall 15b parallel to the main surface of the substrate (see FIG. 1). The drain ports 31 opened on the substrate main surface parallel side wall 15b are arranged at the same pitch as the drain ports 31 opened on the substrate main surface orthogonal side wall 15a, and are the same as the upper end 30b of the substrate main surface parallel side wall 15b. It is located at a lower position, that is, at the same height as the drain port 31 opened on the side wall 15a orthogonal to the main surface of the substrate.

In the substrate processing apparatus 100 of the present embodiment, the side wall 1 orthogonal to the substrate main surface of the chemical tank CB1 or the washing tank WB1 is provided.
5, a drain port 31 having an opening and a side wall 15b parallel to the main surface of the substrate.
Each of the drainage ports 31 has a circular opening shape, and is formed so as to penetrate the wall of the substrate main surface orthogonal side wall 15 or the substrate main surface parallel side wall 15b perpendicularly to the wall surface.
The inside of the processing tank 15 is tapered so that the opening area gradually decreases from the inside to the outside of the processing tank 15.

As described above, the chemical such as hydrofluoric acid and the pure water supplied from the discharge nozzle 20 are supplied to the chemical tank CB1 and the washing tank W
It overflows sequentially from the upper part of B1. At this time, the chemical tank CB
Pure water also flows out of the drain port 31 formed on the side wall of the washing tank 1 and the washing tank WB1. The chemical solution and pure water flowing out of the chemical solution tank CB1 and the washing tank WB1 are collected, then discharged to the outside of the apparatus, or purified and recycled.

Next, a processing procedure in the substrate processing apparatus 100 will be described. In the present embodiment, for simplicity of description, the substrate W discharged from the loader unit LD is used.
Is transferred by the substrate transfer robot TR in the order of the chemical tank CB1, the washing tank WB1, the washing tank FR, and the drying unit SD. That is, the chemical solution tank CB1 is a processing tank for storing hydrofluoric acid, and the substrate W that has been subjected to the etching treatment with hydrofluoric acid in the chemical solution tank CB1 is used as a washing tank WB for storing pure water.
1 and subjected to a water washing process. And the washing tank W
The substrate W that has been subjected to the rinsing processing in B1 is transported to the rinsing tank FR, and after the final finishing rinsing processing is performed, the drying unit S
It is dried at D. Hereinafter, the mode of processing in each processing tank will be further described. As described above, the chemical solution tank CB1 and the washing tank FR correspond to FIGS.
Has the same arrangement configuration as that of the washing tank WB1 shown in FIG. 2 and will be described using the same reference numerals as those shown in FIGS.

The elevating mechanism 40 provided in association with the chemical tank CB1 receives a plurality of substrates W from the substrate transport robot TR and lowers the substrates W held at predetermined intervals into the chemical tank CB1. Hydrofluoric acid is stored in the chemical solution tank CB1, and the substrate W is immersed in the hydrofluoric acid. Chemical tank CB1
The etching process is performed on the substrate W immersed in the hydrofluoric acid stored in the substrate. At this time, impurities adhering to the surface of the substrate W are dissolved out by hydrofluoric acid,
It becomes a contaminant in its native form or by some chemical reaction. The contaminant is caused to flow on the surface of hydrofluoric acid (gas-liquid interface) by the liquid flow from the discharge nozzle 20.

After a predetermined time has elapsed and the etching process is completed, the lifting mechanism 40 lifts the plurality of substrates W out of hydrofluoric acid. As described above, the contaminants that have flowed to the surface of hydrofluoric acid by the liquid flow tend to float at the gas-liquid interface. When lifting the substrate W, the substrate W must pass through the gas-liquid interface, but in the substrate processing apparatus according to the present invention, the plurality of substrates held by at least the lifting means in the processing tank. A plurality of drain ports are provided on a side wall intersecting with a plane including the main surface of the plurality of drain ports, and the plurality of drain ports are arranged so as to be arranged at the same pitch as a holding interval of the plurality of substrates held by the lifting means. Therefore, adhesion of contaminants to the substrate W is suppressed.
This will be described with reference to FIGS.

FIG. 4 is a side view showing how the processing liquid flows out of the processing tank, and FIG. 5 is a plan view thereof. FIG. 6 is a view showing the state of the flow of the processing liquid in the processing tank. Since the hydrofluoric acid is continuously discharged from the discharge nozzle 20 during the etching process, the chemical solution tank CB is accordingly discharged.
Hydrofluoric acid continues to overflow from the top of 1. Then, even in the stage where the substrate W is lifted, hydrofluoric acid overflows from the upper part of the chemical solution tank CB1 and continues to flow out. The flow overflowing from the upper part of the chemical solution tank CB1 is caused by the substrate W and the substrate W
When the ascending flow of hydrofluoric acid reaches between the gas-liquid interface, the hydrofluoric acid changes its direction in the horizontal direction, goes to the substrate main surface orthogonal side wall 15a, and overflows from the upper end 30a of the substrate main surface orthogonal side wall 15a. A series of flows near these gas-liquid interfaces tends to be turbulent. Here, since a plurality of liquid discharge ports 31 are provided in the substrate main surface orthogonal side wall 15a of the chemical solution tank CB1, the liquid discharge ports 31 provided in the substrate main surface orthogonal side wall 15a are added to the above-described series of flows. Are added, and a plurality of flow lines that flow preferentially corresponding to the plurality of drain ports provided are generated. And these drainage ports 31
Are arranged at the same pitch as the holding interval of the substrates W held by the elevating mechanism 40, so that the portions of the plurality of substrates W held by the elevating mechanism 40 on both sides of the main surface of each of the substrates are held. The acid will preferentially flow out of the tank. Therefore, as shown in FIG. 5, the hydrofluoric acid in the portions located on both sides of each of the main surfaces of the plurality of substrates W held by the lifting mechanism 40 flows out of the tank preferentially. The contaminants floating between W can be efficiently discharged out of the tank.

Thus, when the elevating mechanism 40 lifts the substrate W, even if the substrate W passes through the gas-liquid interface, it is possible to suppress the attachment of contaminants to the substrate W. Also,
Since contaminants can be prevented from adhering to the substrate W, the substrate W can be lifted at a higher speed than before.

In the substrate processing apparatus 100 of this embodiment, the drain port a opened in the substrate main surface orthogonal side wall 15a of the chemical solution tank CB1 is connected to the next upper end 30a of the substrate main surface orthogonal side wall 15a by the following. Below the position, that is, the lifting mechanism 40
The plane including the main surface of the substrate that is held by the substrate and is immersed in the chemical solution tank CB1 is the upper end a of the side wall 15a orthogonal to the main surface of the substrate.
Is located below both sides of the crossing position, the hydrofluoric acid in the portions located on both sides of each of the main surfaces of the plurality of substrates W held by the elevating mechanism 40 flows out of the tank more preferentially. Becomes

As the hydrofluoric acid of the portions located on both sides of each of the main surfaces of the plurality of substrates W held by the elevating mechanism 40 flows out of the tank preferentially, as shown in FIG. The flow of hydrofluoric acid between the plurality of substrates W is rectified, and the circulation of the chemical solution between the substrates W is performed more efficiently. That is, by rectifying the flow of hydrofluoric acid near the gas-liquid interface in the chemical liquid tank CB1, the flow in the tank is induced, and a stable flow of hydrofluoric acid is formed. Thus, a constant concentration of hydrofluoric acid is constantly supplied over the entire surface of all the substrates W held by the elevating mechanism 40, so that the in-plane uniformity of the etching process is improved, and the distance between the substrates W is improved. Variations are also reduced.

Next, when the elevating mechanism 40 completely lifts the plurality of substrates W from the chemical solution tank CB1, the substrate transport robot T
R receives the substrate W, transports it to the washing tank WB1, and transfers the plurality of substrates W to the elevating mechanism 40 provided in association with the washing tank WB1. The elevating mechanism 40 lowers the substrate W into the washing tank WB1, and immerses the substrate W in pure water. With respect to the substrate W immersed in pure water, a washing process is performed.

Here, the treatment efficiency of the water washing treatment is highest near the gas-liquid interface. Therefore, the elevating mechanism 40 moves the substrate W
In the stage where is lowered, the vicinity of the gas-liquid interface that is relatively moving on the main surface of the substrate W is most efficiently cleaned. At this time, the contaminants slightly adhered when being lifted from the chemical solution tank CB1 are washed out together with the hydrofluoric acid adhering to the surface of the substrate W. The contaminants become new contaminants in their native form or by some chemical reaction.

Similarly to the etching process in the chemical solution tank CB1, the pure water is continuously discharged from the discharge nozzle 20 during the water washing process.
Pure water continues to overflow from the top of 1. In addition, washing tank W
Since the drain port 31 is also formed in the side wall 15a orthogonal to the main surface of the substrate B1 in the same manner as the chemical liquid tank CB1, the flow of pure water near the gas-liquid interface, that is, the passage between the substrates W When the ascending flow reaches the gas-liquid interface, it turns to a horizontal direction, heads toward the substrate main surface orthogonal side wall 15a, and overflows from the upper end 30a of the substrate main surface orthogonal side wall 15a near the gas-liquid interface. The flow is as follows. In other words, a flow toward the drain port 31 provided on the side wall 15a orthogonal to the main surface of the substrate is added to the series of flows, and a plurality of flow lines preferentially corresponding to the plurality of drain ports provided are formed. Occurs. Since the plurality of drain ports 31 are arranged at the same pitch as the holding interval of the substrates W held by the elevating mechanism 40, each of the main surfaces of the plurality of substrates W held by the elevating mechanism 40 is The pure water in the portions located on both sides will preferentially flow out of the tank. Therefore, as shown in FIG. 5, the pure water in the portions located on both sides of each of the main surfaces of the plurality of substrates W held by the elevating mechanism 40 flows out of the tank preferentially. The contaminants floating between W can be efficiently discharged out of the tank.

In the substrate processing apparatus 100 of the present embodiment, the drain port a opened on the substrate main surface orthogonal side wall 15a of the washing tank WB1 also has the following upper end 30a of the substrate main surface orthogonal side wall 15a. Below the position, that is, the lifting mechanism 40
The plane including the main surface of the substrate that is held by the substrate and is immersed in the chemical solution tank CB1 is the upper end a of the side wall 15a orthogonal to the main surface of the substrate.
Is located below both sides of the position intersecting with the pure water, the pure water of the portions located on both sides of each of the main surfaces of the plurality of substrates W held by the elevating mechanism 40 flows out of the tank more preferentially. Becomes

Further, new contaminants may be generated after the substrate W is completely immersed in pure water. The contaminant is caused to flow on the surface of the pure water by the liquid flow from the discharge nozzle 20. Eventually, when a predetermined time elapses and the water washing process is completed, the elevating mechanism 40 lifts the plurality of substrates W from the pure water. Also at this time, similarly to the time of charging into pure water, the pure water in the portions located on both sides of each of the main surfaces of the plurality of substrates W held by the elevating mechanism 40 flows out of the tank preferentially. Before the contaminants floating between the substrates W are transferred to the substrates W, the contaminants can be efficiently discharged out of the tank. As a result, the lifting mechanism 40 moves the substrate W
When the substrate W is lifted, even if the substrate W passes through the gas-liquid interface, the adhesion of contaminants to the substrate W can be suppressed.

Further, as the pure water in the portions located on both sides of each of the main surfaces of the plurality of substrates W held by the elevating mechanism 40 flows out of the tank preferentially, as shown in FIG. The flow of hydrofluoric acid between the plurality of substrates W is rectified, and the pure water circulation between the substrates W is efficiently performed. That is, similarly to the above, the washing tank WB1 is also provided with the drainage port 31 on the side wall 15a orthogonal to the main surface of the substrate.
It induces the flow in the tank and forms a stable flow of pure water. Thereby, fresh pure water is constantly supplied stably over the entire surface of all the substrates W held by the elevating mechanism 40, so that the in-plane uniformity of the rinsing process is improved and the variation between the substrates W is improved. Is also reduced.

The formation of a stable pure water flow in the washing tank WB1 leads to an improvement in the washing efficiency of the gas-liquid interface exerted on the substrate W when the washing tank is put into the washing tank. That is, if the pure water flow in the tank is stable, the contaminants are easily separated from the substrate W near the gas-liquid interface. Therefore, the washing tank W
The lowering speed of the substrate W to B1 can be made higher than before.

Next, when the lifting mechanism 40 completely lifts the plurality of substrates W from the washing tank WB1, the substrate transport robot T
R receives the substrate W and transports it to the washing tank FR, and the washing tank F
The plurality of substrates W are transferred to the elevating mechanism 40 provided in association with R. In the washing tank FR, the same processing as the processing in the washing tank WB1 is performed. Therefore, also in the washing tank FR, it is possible to suppress the adhesion of the contaminant to the substrate W when the substrate W passes through the gas-liquid interface, and to improve the efficiency of the washing process. As a result, the washing tank FR
The contaminants adhering to the substrate W after being lifted from the substrate are significantly reduced, and the cleanliness of the substrate W is extremely high.

Thereafter, the substrate W is dried in the drying section SD, and further conveyed to the unloader section ULD to complete a series of cleaning processes.

As described above, in the substrate processing apparatus according to the present invention, the plurality of drain ports 31 are provided on the side wall 15a orthogonal to the main surface of the substrate in the processing tank, and the drain ports 31 are the same as the substrate holding interval. Since the processing liquids are arranged at the pitch, portions of the processing liquid located on both sides of each of the main surfaces of the plurality of substrates W preferentially flow out of the tank. As a result, the contaminants floating between the substrates W can be efficiently discharged out of the tank, and even if the substrates W pass through the gas-liquid interface, the adhesion of the contaminants to the substrates W can be suppressed. In addition, the processing efficiency can be improved by stabilizing the flow of the processing liquid in the processing tank.

Although the embodiment of the present invention has been described above, the present invention is not limited to the above-described example.
For example, in the above embodiment, the multi-tank type substrate processing apparatus has been described, but the substrate processing apparatus according to the present invention may be a one-bus type apparatus. In the one-bath type apparatus as well, the processing efficiency can be improved by stabilizing the flow of the processing liquid in the processing tank, and the substrate W passes through the gas-liquid interface after the final rinsing processing. For,
At that time, the adhesion of the contaminant to the substrate W can be suppressed. That is, the substrate processing apparatus according to the present invention is an apparatus for immersing a substrate in a processing liquid in a processing bath and performing immersion processing while forming a liquid flow, and executes a process in which the substrate W passes through a gas-liquid interface. It can be applied to any device that does.

In the above embodiment, the chemical solution tank C
The drain port 31 provided on the substrate main surface orthogonal side wall 15a of the B1 or the washing tank WB1 is located below the next position at the upper end 30a of the substrate main surface orthogonal side wall 15a, that is, at the upper end 30a of the substrate main surface orthogonal side wall 15a. A plane including the main surface of the substrate W held by the elevating mechanism 40 and immersed in the processing bath 15 is disposed below both sides of a position where the upper surface 30a of the substrate main surface orthogonal side wall 15a intersects, The position below this position is optimal, but is not limited to this. For example, a plane including the main surface of the substrate W held by the elevating mechanism 40 and immersed in the processing tank 15 is a main surface of the substrate. It may be located below the position where it intersects the upper end 30a of the plane orthogonal side wall 15a.

In the above embodiment, the drain port 3
Each of the apertures 1 has a circular opening shape, but is not limited to this. For example, the opening shape may be an ellipse, a triangle such as a downward wedge, or another polygon.

In the above embodiment, the drain port 3
1 each have a tapered opening so that the opening area gradually decreases from inside to outside of the chemical solution tank CB1 and the washing tank WB1, but the opening area increases from inside to outside of the processing tank. The taper shape may be tapered so as to gradually increase, or a shape in which the opening area does not change.

In the above embodiment, the drain port 3
1 is a side wall body of the chemical solution tank CB1 and the washing tank WB1,
Although it is formed so as to penetrate vertically to the wall surface, it may be inclined downward and forward from inside to outside of the treatment tank to increase the drainage speed, and the direction of penetration is not limited.

In the above embodiment, the chemical solution tank C
The drain port 31 opening in the side wall 15 orthogonal to the main surface of the substrate B1 and the washing tank WB1 and the drain port 31 opening in the side wall 15b parallel to the main surface of the substrate respectively open in the vertical plane inside the side wall.
An opening may be formed on each upper end surface of the side wall 15 orthogonal to the main surface of the substrate or the side wall 15b parallel to the main surface of the substrate.

In the above embodiment, the chemical solution tank C
The drain port 31 having an opening in the side wall 15 orthogonal to the main surface of the substrate B1 and the washing tank WB1 and the drain port 31 having an opening in the side wall 15b parallel to the main surface of the substrate respectively pass through the side wall and flow out of the processing tank. However, each of the drain ports 31 may communicate with a suction / exhaust unit such as a pump so as to flow out of the drain port 31 strongly.

In the above embodiment, the drain port 31 is also formed in the side wall 15b parallel to the main surface of the substrate.
The drain port 31 is not indispensable, and the drain port 31 opening to the side wall 15b parallel to the main surface of the substrate is not essential, and the chemical tank CB1 and the washing tank W
In B1, it is sufficient that at least an opening is formed in the side wall 15a orthogonal to the main surface of the substrate W, which is a side wall perpendicular to the main surface of the substrate W held by the elevating mechanism 40 and immersed in the processing bath 15. However, it is desirable to keep the concentration of the chemical solution in the processing and the cleanliness of the pure water uniform.
That is, it is desirable that the processing liquid be uniformly poured from the entire circumference of the tank wall. To this end, if the drainage ports 31 are formed on all of the side wall 15a orthogonal to the main surface of the substrate and the side wall 15b parallel to the main surface of the substrate, the processing liquid can be easily and uniformly discharged from the entire circumference of the processing tank 15. It is.

Further, the processing procedure in the substrate processing apparatus 100 is not limited to the above description, but may be, for example, a procedure in which the substrate is further passed through a chemical tank CB2 and a washing tank WB2. .

[0055]

As described above, according to the first aspect of the present invention, in the processing tank, at least the side wall intersecting with the plane including the main surfaces of the plurality of substrates held by the lifting means is provided. A plurality of drain ports are provided, and the plurality of drain ports are near an upper end of the side wall where the processing liquid overflows,
Since the plurality of substrates held by the lifting means are arranged side by side at the same pitch as the holding interval, contaminants floating around the substrates can be efficiently discharged to the outside of the tank, and the substrates have a gas-liquid interface. Even when the substrate passes, the adhesion of the contaminant to the substrate can be suppressed, and the flow of the processing liquid in the processing tank can be stabilized to improve the processing efficiency.

[Brief description of the drawings]

FIG. 1 is a front view showing an example of a substrate processing apparatus according to the present invention.

FIG. 2 is a front view showing a main configuration of a washing tank of the substrate processing apparatus of FIG. 1;

FIG. 3 is a side view showing a main configuration of a washing tank of the substrate processing apparatus of FIG. 1;

FIG. 4 is a side view showing a state in which a processing liquid flows out of a processing tank.

FIG. 5 is a plan view showing a state in which a processing liquid flows out of a processing tank.

FIG. 6 is a diagram showing a state of a flow of a processing liquid in a processing tank.

FIG. 7 is a view showing vertical streak particles adhered to a substrate in the related art.

[Explanation of symbols]

 15a Substrate main surface intersecting side wall 15b Substrate main surface parallel side wall 20 Discharge nozzle 31 Drainage port 40 Elevating mechanism 100 Substrate processing apparatus CB1, CB2 Chemical bath WB1, WB2, FR Rinse bath W Substrate

Claims (1)

[Claims] 1. A substrate processing apparatus for performing immersion processing by immersing a substrate in a processing liquid, comprising: (a) a processing tank in which the processing liquid is stored and a substrate is immersed; A processing liquid supply unit provided at the bottom of the processing tank to supply a processing liquid into the processing tank; (c) holding the substrate, and holding the substrate between the inside of the processing tank and above the processing tank. Elevating means for elevating and lowering, wherein a plurality of liquid discharge ports are provided in a side wall intersecting at least a plane including a main surface of the plurality of substrates held by the elevating means in the processing tank; The substrate processing apparatus, wherein the liquid ports are arranged near the upper end of the side wall where the processing liquid overflows, and are arranged at the same pitch as the holding interval of the plurality of substrates held by the lifting means. .