JP2000209006A - High frequency circuit module and portable communication unit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a small high frequency circuit module which can reduce the transmission loss of a high frequency signal that is transmitted on a transmission line. SOLUTION: A multilayer printed circuit board consists of lumped constant elements 3, 4, 5, 10, 11 and 12, a semiconductor chip 16 and a dielectric substrate of three layers or more and has the transmission lines 2 and 9 on the surface of a dielectric substrate 1 of the 1st layer and a ground electrode 34 on the back surface of a dielectric substrate 30 of the lowest layer respectively. Then a high frequency circuit module has the said multilayer printed circuit board where those lumped constant elements and semiconductor chip are connected to the lines 2 and 9. The printed circuit board has a cavity that is opposite to the transmission lines and a ground electrode 34 via a dielectric, i.e., a component element of the printed circuit board. The cavity consists of a hole 35 which is formed at least a part of the dielectric substrate of at least a single layer of the dielectric substrates 18 and 24 of the 2nd and subsequent layers and under the area where the lines 2 and 9 are prepared.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency circuit module and a portable communication device, and more particularly, to a reduction in transmission loss of a high-frequency signal on a transmission line and a reduction in the size of the high-frequency circuit module and the portable communication device. When it comes to effective technology.

[0002]

2. Description of the Related Art For example, in portable communication devices such as mobile radio terminals and mobile phones, miniaturization and high power efficiency of high-frequency circuit modules are important factors from the viewpoint of mountability and talk time. As high-frequency circuit modules used in conventional mobile radio terminals and mobile phones, for example, a high-frequency circuit module using a single-layer dielectric substrate described in the following document (a) or a following high-frequency circuit module (b) A high-frequency circuit module using the described multilayer dielectric substrate is known. In a high-frequency circuit module described in the following document (a), a distributed constant element, a resistor, a capacitor, a lumped constant element of an inductor and a semiconductor chip formed by a transmission line are formed on the same surface of a dielectric substrate, and input / output matching The circuit configuration includes a circuit and a power amplifier using a semiconductor chip. Further, in the high-frequency module described in this document (a), the ground electrode provided on the front surface of the dielectric substrate and the ground electrode on the back surface are connected by via holes. The high-frequency circuit module described in the following document (b) is a distributed constant element using a transmission line,
A lumped constant element of a resistor, a capacitor, an inductor and a semiconductor chip are formed on the same surface of a dielectric substrate, and have a circuit configuration including an input / output matching circuit and a power amplifier using the semiconductor chip. In the high-frequency circuit module described in this document (b), the ground electrode of the semiconductor chip provided on the front surface of the dielectric substrate and the ground electrode on the back surface are connected by through holes. Further, the high-frequency signal electrode provided on the back surface of the dielectric substrate is connected to the high-frequency signal electrode provided on the front surface of the dielectric substrate via the through-hole and the wiring provided in the second layer. A high-frequency signal is transmitted from the electrode to the high-frequency signal electrode provided on the surface of the dielectric substrate, or from the high-frequency signal electrode provided on the surface of the dielectric substrate to the high-frequency signal electrode provided on the back surface of the dielectric substrate. (B) 1996 IEICE General Conference C-86
"800 MHz band analog and digital shared power amplifier module using single layer alumina thin film substrate" (b) 1997 IEICE Electronics Society Conference C-2-14 "1.9 GHz band RF front end module using ceramic substrate""

[0003]

The above-mentioned document (a),
In the high-frequency circuit module described in (b), the distributed constant element, the resistance, the capacitance, the lumped constant element of the inductor, and the semiconductor chip formed by the transmission line can be formed on the same surface of the dielectric substrate. By forming a distributed constant element, a resistor, a capacitor, a lumped constant element of an inductor and a wiring connecting a semiconductor chip, or a distributed constant element by a transmission line for transmitting a high-frequency signal in the second and subsequent layers, there is an advantage that the size can be reduced. Although we have
When a dielectric substrate having two or more layers is made thin, transmission loss of a high-frequency signal in a transmission line increases. Therefore, if a single-layer dielectric substrate or a multilayer dielectric substrate is thinned to reduce the size of a high-frequency circuit module, the transmission loss of a high-frequency signal in a distributed constant element formed by a transmission line increases, and power consumption increases. There was a problem that efficiency was reduced. Further, in the high-frequency circuit module disclosed in the document (b), when the width of the conductor forming the transmission line is reduced, the transmission loss of the high-frequency signal on the transmission line increases. Therefore, if the width of the conductor forming the transmission line is reduced in order to reduce the size of the high-frequency circuit module, the transmission loss of the high-frequency signal in the distributed constant element formed by the transmission line increases, and the power efficiency is reduced. There was a problem. The present invention has been made to solve the problems of the prior art, and an object of the present invention is to reduce the transmission loss of a high-frequency signal on a transmission line in a high-frequency circuit module,
Another object of the present invention is to provide a technology that can achieve downsizing. It is another object of the present invention to provide a technology that enables a portable communication device to be reduced in size and to achieve higher power efficiency. The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0004]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows. That is, the present invention provides a lumped element,
A high-frequency circuit module having a semiconductor chip and a multilayer wiring board having a transmission line on a surface, wherein the lumped element and the semiconductor chip are electrically connected to the transmission line, wherein the multilayer wiring board is It has a cavity facing the transmission line via a dielectric which is a constituent material of the multilayer wiring board, and the cavity is formed at least partially below a region where the transmission line is provided. . The present invention also provides a multi-layer wiring board comprising a lumped element, a semiconductor chip, and a dielectric substrate having two or more layers and having a transmission line on the surface of the first dielectric substrate. A high-frequency circuit module in which the lumped element and the semiconductor chip are electrically connected to a line, wherein the multilayer wiring board faces the transmission line via a dielectric that is a constituent material of the multilayer wiring board. Having a cavity, wherein the cavity is formed by a hole provided in at least a part of a dielectric substrate of at least one layer of the second and subsequent dielectric substrates below a region where the transmission line is provided. Features. Further, the invention is characterized in that the cavity is in contact with outside air. Further, the present invention includes a lumped element, a semiconductor chip, a multilayer wiring board having a transmission line on a front surface, and a ground electrode on a back surface, wherein the lumped element and the semiconductor chip are electrically connected to the transmission line. A high-frequency circuit module, wherein the multilayer wiring board has a cavity opposed to the transmission line and the ground electrode via a dielectric that is a constituent material of the multilayer wiring board, The cavity is formed at least partially below a region where the transmission line is provided. Also, the present invention
It is composed of a lumped element, a semiconductor chip, and three or more dielectric substrates, has a transmission line on the surface of the first dielectric substrate, and has a ground electrode on the back surface of the lowermost dielectric substrate. A high-frequency circuit module having a multilayer wiring board, wherein the lumped element and the semiconductor chip are electrically connected to the transmission line, wherein the multilayer wiring board includes the transmission line, and the ground electrode; The multi-layer wiring board has a cavity facing through a dielectric which is a constituent material of the multilayer wiring board, and the cavity is provided with the transmission line of at least one dielectric substrate of the second and subsequent dielectric substrates. It is characterized by being formed with a hole provided at least partially under the region. Further, the invention is characterized in that the cavity is formed below a region where a transmission line on the output side of the semiconductor chip is provided. Further, the invention is characterized in that the cavity is formed below a region where an input-side transmission line of the semiconductor chip is provided. Further, the invention is characterized in that the length of the cavity in the same direction as the width direction of the transmission line is at least twice as long as the width of the transmission line. Also,
According to the present invention, the cavity has a shape similar to the transmission line,
Further, the width of the transmission line is at least twice as large as the width of the transmission line. Further, the present invention is characterized in that the cavity is filled with a dielectric material having a lower relative dielectric constant than the dielectric material constituting the multilayer wiring board. Further, the invention is characterized in that the dielectric material forming the multilayer wiring board is glass or ceramic. Also,
The present invention is characterized in that the transmission line is connected to at least a second or later wiring layer or a ground electrode by a through hole. The present invention also provides an antenna,
A portable communication device comprising: a power amplification circuit module that amplifies a high-frequency signal radiated from the antenna, wherein the power amplification circuit module includes the high-frequency circuit module according to any one of the above.

[0005]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments, components having the same functions are denoted by the same reference numerals, and repeated description thereof will be omitted.

[First Embodiment] FIG. 1 is an exploded perspective view of a high-frequency circuit module according to a first embodiment of the present invention. As shown in the figure, in the present embodiment, the first to fourth layers
A multilayer wiring board is constituted by the dielectric substrates (1, 18, 24, 30) of the layers. The dielectric substrates (1, 18,
24, 30) are made of a dielectric material such as glass or ceramic. A transmission line 2 and a chip capacitor (3, 4, 5) as a lumped element are formed on a dielectric substrate 1 of the first layer.
Is formed. Here, one end of the chip capacitor 3 is connected to the input terminal 8, one end of the chip capacitor 4 is connected to the ground terminal 6, and one end of the chip capacitor 5 is connected to the ground terminal 7. Note that the lumped element may be a resistance element or an inductance element. Further, on the first dielectric substrate 1, an output-side matching circuit including the transmission line 9 and the chip capacitors (10, 11, 12) is formed. Here, one end of the chip capacitor 10 is connected to the output terminal 15, one end of the chip capacitor 11 is connected to the ground terminal 13, and
Is connected to the ground terminal 14. Further, the first layer dielectric substrate 1 is provided with a hole 17 from which the dielectric has been removed,
A semiconductor chip 16 adhered to a ground conductor 19 formed on a second-layer dielectric substrate 18 is arranged in the hole 17.

[0007] The transmission line 2 formed on the first-layer dielectric substrate 1 is connected to the third-layer dielectric substrate 24 through a through hole 20 formed in the second-layer dielectric substrate 18. And a terminal (gate bias terminal) formed on the first dielectric substrate 1 through a through hole 21 formed in the second dielectric substrate 18. ) 26. The transmission line 9 formed on the first-layer dielectric substrate 1 is formed in the through-hole 22 formed in the second-layer dielectric substrate 18 and the third-layer dielectric substrate 24. The transmission line 31 formed on the fourth-layer dielectric substrate 30 is connected to the transmission line 31 formed on the fourth-layer dielectric substrate 30 via the through-hole 27, and the through-hole 28 formed on the third-layer dielectric substrate 24 and the second layer It is connected to a terminal (power supply voltage terminal) 32 formed on the first-layer dielectric substrate 1 through a through-hole 23 formed in the first dielectric substrate 18. The semiconductor chip 16 is a bipolar transistor or a field-effect transistor. The semiconductor chip 16 is bonded to a transmission line (2, 9) formed on the first dielectric substrate 1 by bonding.

The ground conductor 19 formed on the second dielectric substrate 18 to which the semiconductor chip 16 is bonded is connected to the ground conductor 29 formed on the third dielectric substrate 24 via a through hole. And the ground conductor 33 formed on the fourth-layer dielectric substrate 30 and the ground conductor 34 formed on the back surface of the fourth-layer dielectric substrate 30. That is, the dielectric substrate 1
The ground conductor 19 formed on the ground conductor 8 is connected to the ground conductor (36, 3).
The through-hole formed in 7) and the through-hole formed in the ground electrode 33 formed in the dielectric substrate 30 are connected to the ground conductor 34 on the back surface. Further, the ground conductor 19 formed on the dielectric substrate 18 is connected to a through hole formed in the ground conductor 29 formed on the dielectric substrate 24 and a ground electrode (38, 39) formed on the dielectric substrate 30. The formed through hole connects to the ground conductor 34 on the back surface. As shown in FIG. 1, in the present embodiment,
A hole 35 is provided by removing the dielectric in a portion of the second-layer dielectric substrate 18 below the transmission line 9 of the output-side matching circuit formed on the first-layer dielectric substrate 1, The hole 35
For the first dielectric substrate 1 and the third dielectric substrate 24
And an airtight structure. Each of the dielectric substrates (1, 18,...) Is inserted into a hole 35 provided in the second-layer dielectric substrate 18.
24, 30) may be filled with a dielectric material having a lower relative dielectric constant than the dielectric material, for example, a low-temperature fired glass ceramic. In this embodiment, a terminal for handling a high-frequency signal and a terminal for applying a voltage to a semiconductor are provided on the first dielectric substrate 1. For example, the terminal for handling a high-frequency signal is provided on the first layer. And a terminal for applying a voltage to the semiconductor is a dielectric substrate 30 of the fourth layer.
Or a terminal for handling a high-frequency signal and a terminal for applying a voltage to the semiconductor may be provided on the fourth dielectric substrate 30, and the number of terminals is not particularly limited.

FIG. 2 is a cross-sectional view showing a cross-sectional structure of a main part of the high-frequency circuit module according to the present embodiment.
It is sectional drawing which shows the cross section cut | disconnected by the -B cutting line. FIG.
FIG. 3 is a diagram showing an equivalent circuit of the high-frequency circuit module according to the first embodiment, in which the transmission line 2 and the chip capacitors (3, 4, 5) formed on the first dielectric substrate 1; A line 25 for applying a gate bias voltage to the semiconductor chip 16 including wires, a terminal (gate bias terminal)
26, an input-side matching circuit composed of the input terminal 15, a power supply to the semiconductor chip 16 including the transmission line 9, the chip capacitors (10, 11, 12), and the bonding wires formed on the first-layer dielectric substrate 1; FIG. 2 is a circuit diagram showing a one-stage amplifier equalizer circuit including an output-side matching circuit including a line 31 for applying a voltage, a terminal (power supply voltage terminal) 32, and an output terminal 15. In FIG. 3, the transmission line 2 includes a transmission line 2a, a transmission line 2b, and a transmission line 2c. The transmission line 9 includes a transmission line 9a, a transmission line 9b, a transmission line 9
c.

The transmission loss of a high-frequency signal on a transmission line in the high-frequency circuit module of the present embodiment will be described below in comparison with a conventional transmission line. FIG. 4 is a perspective view showing a schematic configuration of a transmission line formed on a single-layer dielectric substrate. The transmission line formed on the single-layer dielectric substrate shown in FIG. 4 generally includes a conductor 43 on the surface constituting the transmission line,
It comprises a dielectric substrate 44 and a ground conductor 45 on the back surface.
FIG. 5 is a graph showing a result of calculating a transmission loss of a high-frequency signal of a transmission line formed on a single-layer dielectric substrate by changing the thickness of the dielectric substrate 44. The graph shown in FIG. 5 shows the transmission loss at 1.9 GHz when the relative permittivity of the dielectric substrate 44 is set to 8.1 and the thickness of the dielectric substrate 44 is changed from 0.1 mm to 3.0 mm. It is a graph which shows the result of calculation. In FIG. 5, the curve 1 shows a width of the conductor 43 constituting the transmission line of 0.1 mm, and the curve 2 shows a width of 0.2 mm.
mm, curve 3 is a calculated value of 0.5 mm. As is clear from the graph shown in FIG. 5, when the width of the conductor 43 constituting the transmission line is in the range of 0.1 mm to 0.5 mm,
As the thickness of the dielectric substrate 44 increases, the transmission loss decreases.

FIG. 6 is a graph showing the result of calculating the transmission loss of a high-frequency signal of a transmission line formed on a single-layer dielectric substrate by changing the width of the conductor 43 constituting the transmission line. In the graph shown in FIG. 6, the relative permittivity of the dielectric substrate 44 is set to 8.1, and the width of the conductor 43 constituting the transmission line is set to 0.1.
It is a graph which shows the result of having calculated the transmission loss in 1.9 GHz when changing from 02 mm to 3.0 mm. In FIG. 6, curve 1 shows the thickness of the dielectric substrate 44 of 0.15 mm, curve 2 shows 0.3 mm, and curve 3 shows 0.6 mm.
Is the calculated value of As is clear from the graph shown in FIG. 6, the thickness of the dielectric substrate 44 is 0.15 mm to 0.6 mm.
, The transmission loss tends to decrease as the width of the conductor 43 configuring the transmission line increases.
The width of the conductor 43 constituting the transmission line is 0.3 mm to 0.7 m.
The transmission loss is minimized in the range of m, and the transmission loss tends to increase as the width of the conductor 43 forming the transmission line further increases. As is clear from FIGS. 5 and 6, the transmission loss of the high-frequency signal of the transmission line formed on the single-layer dielectric substrate increases as the thickness of the dielectric substrate 44 increases and the width of the conductor 43 increases. Decrease. For this reason, when the thickness of the single-layer dielectric substrate is reduced in order to reduce the size of the high-frequency circuit module, transmission loss of a high-frequency signal increases and power efficiency is reduced. Similarly, if the width of the conductor forming the transmission line is reduced in order to reduce the size of the high-frequency circuit module, the transmission loss of the high-frequency signal of the distributed constant element due to the transmission line increases, and the power efficiency decreases. was there.

FIG. 7 is a perspective view showing a schematic configuration of a transmission line formed on a two-layer dielectric substrate. 2 shown in FIG.
A transmission line formed on a dielectric substrate of a layer generally includes a conductor 46 constituting the transmission line, a dielectric substrate 47, a ground conductor 48 on the back surface, and a ground conductor 49 on the front surface. FIG.
FIG. 9 is a graph showing a result of calculating a transmission loss of a high-frequency signal of a transmission line formed on a two-layer dielectric substrate by changing the thickness of the dielectric substrate 47. FIG. The graph shown in FIG. 8 shows the transmission loss at 1.9 GHz when the relative permittivity of the dielectric substrate 47 is set to 8.1 and the thickness of the dielectric substrate 47 is changed from 0.1 mm to 3.0 mm. It is a graph which shows the result of calculation. In FIG. 8, the curve 1 shows a width of the conductor 46 constituting the transmission line of 0.1 mm, and the curve 2 shows a width of 0.2 m.
m, curve 3 is a calculated value of 0.5 mm. As is clear from the graph shown in FIG.
In the range of 0.1 mm to 0.3 mm, the transmission loss decreases as the thickness of the dielectric substrate 47 increases. FIG. 9 is a graph showing a result of calculating a transmission loss of a high-frequency signal of a transmission line formed on a two-layer dielectric substrate by changing the width of the conductor 46 forming the transmission line. The graph shown in FIG. 9 shows that the relative permittivity of the dielectric substrate 47 is 8.1, and the width of the conductor 46 forming the transmission line is 0.02 mm to 0.02 mm.
It is a graph which shows the result of having calculated the transmission loss in 1.9 GHz when it changed to 3.0 mm. In FIG. 9, curve 1 indicates that the thickness of the dielectric substrate 47 is 0.15 m.
m, curve 2 is a calculated value of 0.3 mm, and curve 3 is a calculated value of 0.6 mm. As is apparent from FIG. 9, when the thickness of the dielectric substrate 47 is in the range of 0.15 mm to 0.6 mm, the transmission loss tends to decrease as the width of the conductor 46 constituting the transmission line increases. . As is clear from FIGS. 8 and 9, the transmission loss of the high-frequency signal of the transmission line formed on the two-layer dielectric substrate increases as the thickness of the dielectric substrate 47 increases and the width of the conductor 46 increases. Therefore, there is a problem in that when a multilayer dielectric substrate is made thinner in order to reduce the size of the high-frequency circuit module, transmission loss of a high-frequency signal increases and power efficiency decreases. Similarly, when the width of the conductor forming the transmission line is reduced, the transmission loss of the high frequency signal of the distributed constant element due to the transmission line increases, and the power efficiency is reduced.

FIG. 10 is a perspective view showing a schematic configuration of a transmission line of the output-side matching circuit according to the first embodiment. As described above, the transmission line of the output-side matching circuit according to the first embodiment is formed on the three-layer dielectric substrate in which the holes 35 are provided in the second dielectric substrate and the cavities are formed. That is, as shown in FIG. 10, the transmission line of the output-side matching circuit according to the first embodiment includes a conductor 50 on the front surface, a dielectric substrate (51, 52, 53), and a ground conductor 54 on the rear surface. And a cavity 55 formed by the hole 35 provided in the dielectric substrate 52 of the second layer. Here, the dielectric substrate 53 is for forming the ground conductor 54 on the back surface, and is not necessary if a conductor corresponding to the ground conductor 54 is obtained at the time of mounting. The cavity 55 may be filled with a dielectric material having a lower relative dielectric constant than the dielectric substrate (51, 52, 53).

FIG. 11 is a graph showing the result of calculating the transmission loss of the high-frequency signal of the transmission line shown in FIG. 10 by changing the thickness of the dielectric substrate (51, 52, 53). The graph shown in FIG. 11 indicates that the dielectric substrate (51, 52, 53)
Is set to 8.1 and the dielectric substrates (51, 52, 5)
It is a graph which shows the result of having calculated the transmission loss in 1.9 GHz when the thickness of 3) was changed from 0.1 mm to 3.0 mm. In FIG. 11, curve 1 is a calculated value when the width of the conductor 50 constituting the transmission line is 0.1 mm, curve 2 is 0.2 mm, and curve 3 is 0.5 mm. As is clear from FIG. 11, the width of the conductor 50 constituting the transmission line is 0.1 mm.
The dielectric substrate (51,5)
The transmission loss tends to decrease as the thickness of the dielectric substrate (2, 53) increases, but the transmission loss increases when the thickness of the dielectric substrate (51, 52, 53) is 1 mm or more.

FIG. 12 is a graph showing the result of calculating the transmission loss of the high-frequency signal of the transmission line shown in FIG. 10 by changing the width of the conductor 50 constituting the transmission line. The graph shown in FIG. 12 is obtained when the relative permittivity of the dielectric substrate (51, 52, 53) is set to 8.1 and the width of the conductor 50 constituting the transmission line is changed from 0.02 mm to 3.0 mm. 1.9GH
9 is a graph showing a result of calculating a transmission loss at z. In FIG. 12, curve 1 represents a dielectric substrate (51, 5).
2, 53) has a total thickness of 0.15 mm, and curve 2 has a thickness of 0.3.
mm, curve 3 is a calculated value of 0.6 mm. As is clear from FIG. 12, when the total thickness of the dielectric substrates (51, 52, 53) is in the range of 0.15 mm to 0.6 mm, as the width of the conductor 50 forming the transmission line increases, Transmission loss tends to be low.

FIGS. 5, 6, 8, 9, 11, and 12
As is clear from the above, a transmission line having a conductor formed on a single-layer dielectric substrate having a width of 0.1 mm to 0.5 mm, or
The width of the conductor sandwiched between the dielectric substrates is 0.1 mm to 0.5 mm
Compared with the transmission line of at least 2
In a transmission line having a structure in which a cavity is formed by removing a part of the dielectric substrate after the layer, transmission loss is reduced by about 25% to 77%.

As described above, in the present embodiment, the first
A cavity is formed in the second dielectric substrate 18 below the transmission line 9 of the output side matching circuit formed on the first dielectric substrate 1 by providing a hole 35 from which the dielectric has been removed to provide airtightness. It has a structure. Therefore, in the high-frequency circuit module of the present embodiment, when a dielectric substrate having the same thickness is used, the transmission loss of the high-frequency signal on the transmission line can be reduced as compared with the conventional high-frequency circuit module, and the matching can be improved. Since the width of the conductor forming the transmission line can be reduced while keeping the circuit loss constant, the size can be reduced.

FIG. 13 is a graph showing the calculated transmission loss of the output-side matching circuit of the conventional high-frequency circuit module. 6 is a graph showing calculated transmission loss of an output-side matching circuit of a high-frequency circuit module according to the present invention. FIG. 13 shows an output-side matching circuit of the equalization circuit shown in FIG. 3 which is constituted by a single-layer dielectric substrate 44 shown in FIG. The impedance is 50Ω and the relative permittivity of the dielectric substrate 44 is 8.
1. Set the width of the transmission line 9 formed on the dielectric substrate 44 to
3 mm, the dielectric loss tangent tan δ of the dielectric substrate 44 is 0.01
7 so that the transmission line 9a is matched at 1.9 GHz.
The lengths of the transmission lines 9b and 9c and the chip capacity (1
12 is a graph showing a result of calculating a matching circuit transmission loss when the values of (0, 11, 12) are optimized. In FIG. 13, curve 1 is a calculated value when the thickness of the dielectric substrate 44 is 0.15 mm, curve 2 is 0.3 mm, and curve 3 is 0.6 mm. As is clear from FIG. 13, the matching circuit transmission loss tends to decrease as the thickness of the dielectric substrate 44 forming the transmission line 9 increases. For example, if the output impedance of the semiconductor chip 16 including the bonding wires is 10
In the case of Ω, the transmission loss of the matching circuit is 0.16 dB when the thickness of the dielectric substrate 44 is 0.15 mm.
Is reduced to 0.13 dB when the thickness becomes 0.3 mm, and to 0.1 dB when the thickness becomes 0.6 mm.

FIG. 14 is a graph showing the calculated transmission loss of the output-side matching circuit of the high-frequency circuit module according to the present embodiment. FIG. 14 shows an output-side matching circuit of the equalization circuit shown in FIG. 3 by connecting a transmission line 9 to a three-layer dielectric substrate (51, 52, 53), a ground conductor 54 on the back surface, and a cavity, as shown in FIG. 5
5, the output impedance of the semiconductor chip 16 including the bonding wires is 1 to 100Ω, the load impedance is 50Ω, the thickness of the dielectric substrate (51, 52, 53) is 0.1 mm, and the thickness of the cavity 55 is The relative permittivity of the dielectric substrate (51, 52, 53) is 8.1, the width of the transmission line 9 formed on the dielectric substrate 51 is 0.3 mm, and the dielectric substrate (51, 52, 53) is 0.1 mm. ) Is 0.017, and the transmission line 9 is adjusted so as to be matched at 1.9 GHz.
6A is a graph showing a result of calculating a matching circuit transmission loss when the values of the transmission line 9b and the transmission line 9c and the values of the chip capacitances (10, 11, 12) are optimized. In FIG. 14, a semiconductor chip 16 including bonding wires
When the output impedance is 10Ω, the transmission loss of the matching circuit is 0.08 dB, which is smaller than when the dielectric substrate 44 is composed of the single-layer dielectric substrate 44 shown in FIG.
It can be seen that the transmission loss of the matching circuit is reduced by about 40%.

As described above, in the high-frequency circuit module of the present embodiment, when a dielectric substrate having the same thickness is used, the transmission loss of the high-frequency signal on the transmission line can be reduced as compared with the conventional high-frequency circuit module. In addition, since the width of the conductor forming the transmission line can be reduced while the matching circuit loss is kept constant, the size can be reduced.

[Second Embodiment] FIG. 15 is an exploded perspective view of a high-frequency circuit module according to a second embodiment of the present invention.
As shown in the figure, in the present embodiment, a multilayer wiring board is constituted by the first to third dielectric substrates (1, 18, 24). The dielectric substrate (1, 18, 2)
4) is made of a dielectric material such as glass or ceramic. Further, on the dielectric substrate 1 of the first layer, an input-side matching circuit including the transmission line 2 and the chip capacitors (3, 4, 5) is formed. Here, one end of the chip capacitor 3 is connected to the input terminal 8, one end of the chip capacitor 4 is connected to the ground terminal 6, and one end of the chip capacitor 5 is connected to the ground terminal 7. The input terminal 8 is connected to the through hole 8a formed in the second dielectric substrate 18 and the third dielectric substrate 2
4 is connected to a terminal 8c formed on the back surface of the third-layer dielectric substrate 24 by a through hole 8b formed. Further, on the first dielectric substrate 1, an output-side matching circuit including the transmission line 9 and the chip capacitors (10, 11, 12) is formed. Here, one end of the chip capacitor 10 is connected to the output terminal 15, one end of the chip capacitor 11 is connected to the ground terminal 13, and one end of the chip capacitor 12 is connected to the ground terminal 14. The output terminal 15 is a through-hole 15a formed in the second-layer dielectric substrate 18,
Through hole 1 formed in third-layer dielectric substrate 24
5b connects to the terminal 15c formed on the back surface of the third-layer dielectric substrate 24.

The first dielectric substrate 1 is provided with a hole 17 from which the dielectric has been removed. In the hole 17, a ground conductor 19 formed on the second dielectric substrate 18 is formed. A semiconductor chip 16 to be bonded is arranged. The transmission line 2 formed on the first-layer dielectric substrate 1 is connected to a terminal 26,
The transmission line 9 formed on the first-layer dielectric substrate 1 is connected to a terminal 32. The terminal 26 is formed on the back surface of the third-layer dielectric substrate 24 by the through-hole 21 formed in the second-layer dielectric substrate 18 and the through-hole 21 a formed in the third-layer dielectric substrate 24. Is connected to the terminal 21b formed at the bottom. The terminal 32 is formed by a through hole 23 formed in the second dielectric substrate 18 and a through hole 28 formed in the third dielectric substrate 24.
It is connected to a terminal 28a formed on the back surface of the dielectric substrate 24 of the layer. Here, terminal 8c, terminal 15c, terminal 21
The b and the terminal 28a are formed by removing the ground conductor 34 formed on the back surface of the third-layer dielectric substrate 24.

The semiconductor chip 16 is bonded to the transmission lines (2, 9) formed on the first-layer dielectric substrate 1 by bonding. The ground conductor 19 formed on the second-layer dielectric substrate 18 to which the semiconductor chip 16 is bonded is connected to the ground conductor 29 formed on the third-layer dielectric substrate 24 by a through hole. It is connected to a ground conductor 34 formed on the back surface of the dielectric substrate 24 of the eye. Also, in the second-layer dielectric substrate 18, the dielectric under the transmission line 9 of the output-side matching circuit formed on the first-layer dielectric substrate 1 is removed, and a hole 35 is formed. The holes 35 are covered with the first-layer dielectric substrate 1 and the third-layer dielectric substrate 24 to form an airtight structure. FIG. 16 is a cross-sectional view showing a cross-sectional structure of a main part of the high-frequency circuit module according to the present embodiment, and is a cross-sectional view showing a cross section of the same portion as FIG. Also in the high-frequency circuit module of the present embodiment, when a dielectric substrate having the same thickness is used, the transmission loss of the high-frequency signal on the transmission line can be reduced as compared with the conventional high-frequency circuit module. Since the width of the conductor constituting the transmission line can be reduced while keeping the loss constant, downsizing can be achieved.

[Third Embodiment] FIG. 17 is an exploded perspective view of a high-frequency circuit module according to a third embodiment of the present invention.
As shown in the figure, in the present embodiment, a multilayer wiring board is constituted by the first to third dielectric substrates (1, 18, 24). The dielectric substrate (1, 18, 2)
4) is made of a dielectric material such as glass or ceramic. Further, on the dielectric substrate 1 of the first layer, an input-side matching circuit including the transmission line 2 and the chip capacitors (3, 4, 5) is formed. Here, one end of the chip capacitor 3 is connected to the input terminal 8, one end of the chip capacitor 4 is connected to the ground terminal 6, and one end of the chip capacitor 5 is connected to the ground terminal 7. The input terminal 8 is connected to the through hole 8a formed in the second dielectric substrate 18 and the through hole 8b formed in the third dielectric substrate 24 to form the third dielectric substrate 24. Connected to terminal 8c formed on the back surface. Further, on the first dielectric substrate 1, an output-side matching circuit including the transmission line 9 and the chip capacitors (10, 11, 12) is formed. Here, one end of the chip capacitor 10 is connected to the output terminal 1
5, one end of the chip capacitor 11 is connected to the ground terminal 13, and one end of the chip capacitor 12 is connected to the ground terminal 14.
Connected to. The output terminal 15 is connected to a through-hole 15 a formed in the second-layer dielectric substrate 18 and a through-hole 15 b formed in the third-layer dielectric substrate 24. Terminal 15c formed on the back surface
Connected to.

The first dielectric substrate 1 is provided with a hole 17 from which the dielectric has been removed. In the hole 17, a ground conductor 19 formed on the second dielectric substrate 18 is formed. A semiconductor chip 16 to be bonded is arranged. The transmission line 2 formed on the first-layer dielectric substrate 1 is connected to a terminal 26,
The transmission line 9 formed on the first-layer dielectric substrate 1 is connected to a terminal 32. The terminal 26 is formed on the back surface of the third-layer dielectric substrate 24 by the through-hole 21 formed in the second-layer dielectric substrate 18 and the through-hole 21 a formed in the third-layer dielectric substrate 24. Is connected to the terminal 21b formed at the bottom. The terminal 32 is formed by a through hole 23 formed in the second dielectric substrate 18 and a through hole 28 formed in the third dielectric substrate 24.
It is connected to a terminal 28a formed on the back surface of the dielectric substrate 24 of the layer. Here, terminal 8c, terminal 15c, terminal 21
The b and the terminal 28a are formed by removing the ground conductor 34 formed on the back surface of the third-layer dielectric substrate 24.

The semiconductor chip 16 is bonded to the transmission line (2, 9) formed on the first dielectric substrate 1 by bonding. The ground conductor 19 formed on the second-layer dielectric substrate 18 to which the semiconductor chip 16 is bonded is connected to the ground conductor 29 formed on the third-layer dielectric substrate 24 by a through hole. Is connected to the ground conductor 34 formed on the back surface of the dielectric substrate 24. Also, in the second-layer dielectric substrate 18, the dielectric under the transmission line 9 of the output-side matching circuit formed on the first-layer dielectric substrate 1 is removed, and a hole 35 is formed. The hole 35 is filled with a dielectric material 40 having a lower relative dielectric constant than the first dielectric substrate 1, the second dielectric substrate 18, and the third dielectric substrate 24. Further, the hole 35 is inserted into the dielectric substrate 1 of the first layer.
And a third-layer dielectric substrate 24 to form an airtight structure.
FIG. 18 is a cross-sectional view showing a main part cross-sectional structure of the high-frequency circuit module according to the present embodiment, and is a cross-sectional view showing the cross-section of the same portion as FIG. Also in the high-frequency circuit module of the present embodiment, when a dielectric substrate having the same thickness is used, the transmission loss of the high-frequency signal on the transmission line can be reduced as compared with the conventional high-frequency circuit module. Since the width of the conductor constituting the transmission line can be reduced while keeping the loss constant, downsizing can be achieved.

[Fourth Embodiment] FIG. 19 is an exploded perspective view of a high-frequency circuit module according to a fourth embodiment of the present invention.
As shown in the figure, in the present embodiment, a multilayer wiring board is constituted by the first to third dielectric substrates (1, 18, 24). The dielectric substrate (1, 18, 2)
4) is made of a dielectric material such as glass or ceramic. Further, on the dielectric substrate 1 of the first layer, an input-side matching circuit including the transmission line 2 and the chip capacitors (3, 4, 5) is formed. Here, one end of the chip capacitor 3 is connected to the input terminal 8, one end of the chip capacitor 4 is connected to the ground terminal 6, and one end of the chip capacitor 5 is connected to the ground terminal 7. The input terminal 8 is connected to the through hole 8a formed in the second dielectric substrate 18 and the through hole 8b formed in the third dielectric substrate 24 to form the third dielectric substrate 24. Connected to terminal 8c formed on the back surface. Further, on the first dielectric substrate 1, an output-side matching circuit including the transmission line 9 and the chip capacitors (10, 11, 12) is formed. Here, one end of the chip capacitor 10 is connected to the output terminal 1
5, one end of the chip capacitor 11 is connected to the ground terminal 13, and one end of the chip capacitor 12 is connected to the ground terminal 14.
Connected to. The output terminal 9 is connected to the dielectric substrate 1 of the second layer.
8 and the through hole 15b formed in the third dielectric substrate 24 of the third layer.
It is connected to a terminal 15c formed on the back surface of the dielectric substrate 24 of the layer.

The first dielectric substrate 1 is provided with a hole 17 from which the dielectric has been removed, and the hole 17 is bonded to the ground conductor 19 formed on the second dielectric substrate 18. The semiconductor chip 16 to be formed is arranged. The transmission line 2 formed on the first-layer dielectric substrate 1 is connected to a terminal 26, and the transmission line 9 formed on the first-layer dielectric substrate 1 is formed.
Is connected to the terminal 32. The terminal 26 is formed on the back surface of the third-layer dielectric substrate 24 by the through-hole 21 formed in the second-layer dielectric substrate 18 and the through-hole 21 a formed in the third-layer dielectric substrate 24. Is connected to the terminal 21b formed at the bottom. The terminal 32 is formed by a through hole 23 formed in the second dielectric substrate 18 and a through hole 28 formed in the third dielectric substrate 24.
It is connected to a terminal 28a formed on the back surface of the dielectric substrate 24 of the layer. Here, terminal 8c, terminal 15c, terminal 21
The b and the terminal 28a are formed by removing the ground conductor 34 formed on the back surface of the third-layer dielectric substrate 24.

The semiconductor chip 16 is bonded to the transmission lines (2, 9) formed on the first-layer dielectric substrate 1 by bonding. The ground conductor 19 formed on the second-layer dielectric substrate 18 to which the semiconductor chip 16 is bonded is connected to the ground conductor 29 formed on the third-layer dielectric substrate 24 by a through hole. Is connected to a ground conductor 34 formed on the back surface of the dielectric substrate 24. In addition, the hole 41 is removed by removing the dielectric in the second-layer dielectric substrate 18 below the transmission line 2 of the input-side matching circuit formed on the first-layer dielectric substrate 1. The holes 41 are covered with the first-layer dielectric substrate 1 and the third-layer dielectric substrate 24 to form an airtight structure. Similarly, in the second-layer dielectric substrate 18, the dielectric under the transmission line 9 of the output-side matching circuit formed on the first-layer dielectric substrate 1 is removed, and the hole 3 is removed.
5 is provided, and the hole 35 is formed between the dielectric substrate 1 of the first layer and the third
It is covered with the dielectric substrate 24 of the layer to form an airtight structure. In addition,
In the holes 35 and 41 formed by removing the dielectric of the second-layer dielectric substrate 18, the first-layer dielectric substrate 1
A dielectric material having a lower relative dielectric constant than the dielectric substrate 18 of the third layer and the dielectric substrate 24 of the third layer may be filled and hermetically sealed to form an airtight structure. FIG. 20 is a cross-sectional view showing a main part cross-sectional structure of the high-frequency circuit module of the present embodiment, and is a cross-sectional view showing a cross-section of the same portion as FIG. Also in the high-frequency circuit module of the present embodiment, when a dielectric substrate having the same thickness is used, transmission loss of a high-frequency signal on a transmission line can be reduced as compared with a conventional high-frequency circuit module,
Further, since the width of the conductor forming the transmission line can be reduced while maintaining the matching circuit loss constant, the size can be reduced.

[Fifth Embodiment] FIG. 21 is an exploded perspective view of a high-frequency circuit module according to a fifth embodiment of the present invention.
As shown in the figure, in the present embodiment, a multilayer wiring board is constituted by the first and second dielectric substrates (1, 18). The dielectric substrate (1, 18) is made of a dielectric material such as glass or ceramic. Further, the transmission line 2 and the chip capacitors (3, 3) are formed on the dielectric substrate 1 of the first layer.
An input-side matching circuit composed of (4, 5) is formed. Here, one end of the chip capacitor 3 is connected to the input terminal 8, one end of the chip capacitor 4 is connected to the ground terminal 6, and one end of the chip capacitor 5 is connected to the ground terminal 7. Input terminal 8
Are connected to terminals 8c formed on the back surface of the second-layer dielectric substrate 18 through through holes 8a formed in the second-layer dielectric substrate 18. In this embodiment, an output-side matching circuit including the transmission line 9 and the chip capacitors (10, 11, 12) is formed on the first-layer dielectric substrate 1. Here, one end of the chip capacitor 10 is connected to the output terminal 1
5, one end of the chip capacitor 11 is connected to the ground terminal 13, and one end of the chip capacitor 12 is connected to the ground terminal 14.
Connected to. The output terminal 9 is connected to the dielectric substrate 1 of the second layer.
8 are connected to terminals 15c formed on the back surface of the second-layer dielectric substrate 18 through through holes 15a.

A hole 17 is provided in the first dielectric substrate 1, and a semiconductor chip 16 bonded to a ground conductor 19 formed in the second dielectric substrate 18 is provided in the hole 17.
Is arranged. The transmission line 2 formed on the first dielectric substrate 1 is connected to a terminal 26, and the transmission line 9 formed on the first dielectric substrate 1 is connected to a terminal 32. . The terminal 26 is connected to a terminal 21b formed on the back surface of the second dielectric substrate 18 by a through hole 21 formed in the second dielectric substrate 18. The terminal 32 is connected to a terminal 28 a formed on the back surface of the second dielectric substrate 18 by a through hole 23 formed in the second dielectric substrate 18. Here, terminal 8
c, the terminal 15c, the terminal 21b, and the terminal 28a
Ground conductor 29 formed on the back surface of dielectric substrate 18 of the layer
Is formed.

The semiconductor chip 16 is bonded to the transmission lines (2, 9) formed on the first-layer dielectric substrate 1 by bonding. The ground conductor 19 formed on the second dielectric substrate 18 to which the semiconductor chip 16 is adhered is connected to a ground conductor 29 formed on the back surface of the second dielectric substrate 18 by a through hole. You. Also, in the second-layer dielectric substrate 18, the dielectric under the transmission line 9 of the output-side matching circuit formed on the first-layer dielectric substrate 1 is removed, and a hole 35 is formed. And open structure. FIG.
FIG. 3 is a cross-sectional view illustrating a cross-sectional structure of a main part of the high-frequency circuit module according to the present embodiment, and is a cross-sectional view illustrating a cross section of the same portion as in FIG. 2. Also in the high-frequency circuit module of the present embodiment, when a dielectric substrate having the same thickness is used, the transmission loss of the high-frequency signal on the transmission line can be reduced as compared with the conventional high-frequency circuit module. Since the width of the conductor constituting the transmission line can be reduced while keeping the loss constant, downsizing can be achieved.

[Sixth Embodiment] FIG. 23 is an exploded perspective view of a high-frequency circuit module according to a sixth embodiment of the present invention.
As shown in the figure, in the present embodiment, a multilayer wiring board is constituted by the first and second dielectric substrates (1, 18). The dielectric substrate (1, 18) is made of a dielectric material such as glass or ceramic. Further, the transmission line 2 and the chip capacitors (3, 3) are formed on the dielectric substrate 1 of the first layer.
An input-side matching circuit composed of (4, 5) is formed. Here, one end of the chip capacitor 3 is connected to the input terminal 8, one end of the chip capacitor 4 is connected to the ground terminal 6, and one end of the chip capacitor 5 is connected to the ground terminal 7. Input terminal 8
Are connected to terminals 8c formed on the back surface of the second-layer dielectric substrate 18 through through holes 8a formed in the second-layer dielectric substrate 18. In this embodiment, an output-side matching circuit including the transmission line 9 and the chip capacitors (10, 11, 12) is formed on the first-layer dielectric substrate 1. Here, one end of the chip capacitor 10 is connected to the output terminal 1
5, one end of the chip capacitor 11 is connected to the ground terminal 13, and one end of the chip capacitor 12 is connected to the ground terminal 14.
Connected to. The output terminal 9 is connected to the dielectric substrate 1 of the second layer.
8 are connected to terminals 15c formed on the back surface of the second-layer dielectric substrate 18 through through holes 15a.

The first dielectric substrate 1 is provided with a hole 17 from which a dielectric material has been removed. In the hole 17, a hole is adhered to a ground conductor 19 formed on a second dielectric substrate 18. Semiconductor chip 16 is disposed. First-layer dielectric substrate 1
The transmission line 2 formed thereon is connected to a terminal 26, and the transmission line 9 formed on the first-layer dielectric substrate 1 is formed.
Is connected to the terminal 32. The terminal 26 is formed by the through hole 21 formed in the dielectric substrate 18 of the second layer.
It is connected to a terminal 21b formed on the back surface of the dielectric substrate 18 of the layer. The terminal 32 is connected to a terminal 28 a formed on the back surface of the second dielectric substrate 18 by a through hole 23 formed in the second dielectric substrate 18.
Here, the terminals 8c, 15c, 21b and 28a are formed by removing the ground conductor 29 formed on the back surface of the second-layer dielectric substrate 18.

The semiconductor chip 16 is bonded to the transmission lines (2, 9) formed on the first-layer dielectric substrate 1 by bonding. The ground conductor 19 formed on the second-layer dielectric substrate 18 to which the semiconductor chip 16 is bonded is connected to a ground conductor 29 formed on the back surface of the second-layer dielectric substrate 18 by a through hole. You. Also, in the second-layer dielectric substrate 18, the dielectric under the transmission line 9 of the output-side matching circuit formed on the first-layer dielectric substrate 1 is removed, and a hole 35 is formed. The hole 35 is filled with a dielectric material having a lower relative dielectric constant than the dielectric substrate 1 of the first layer and the dielectric substrate 18 of the second layer. FIG.
FIG. 3 is a cross-sectional view illustrating a cross-sectional structure of a main part of the high-frequency circuit module according to the present embodiment, and is a cross-sectional view illustrating a cross section of the same portion as FIG. Also in the high-frequency circuit module of the present embodiment, when a dielectric substrate having the same thickness is used, the transmission loss of the high-frequency signal on the transmission line can be reduced as compared with the conventional high-frequency circuit module. Since the width of the conductor constituting the transmission line can be reduced while keeping the loss constant, downsizing can be achieved. In the above embodiments, the case where the rectangular parallelepiped holes (35, 41) are formed has been described. However, the present invention is not limited to this. For example, as shown in FIG. (3
5, 41) is formed in a shape similar to that of the transmission line (2, 9), and has a width twice or more as large as the width of the conductor constituting the transmission line (2, 9). You may.

FIG. 26 is a block diagram showing a schematic configuration of a mobile radio terminal to which the high-frequency circuit module of each of the above embodiments is applied. In the figure, 101 is an antenna.
1, 102 is an antenna-2, 103 is a duplexer, 1
04 is a power amplifier, 105 is a filter, 106 is a drive amplifier, 107 is a burst switch, 108 is a modulator,
09 is a low noise amplifier, 110 is a frequency converter, 111 is an intermediate frequency amplifier, 112 is a frequency synthesizer, 113
Is a demodulation unit, 114 is a baseband unit, 1
Reference numeral 15 denotes an audio signal processing circuit, 116 denotes a microphone, and 117 denotes a speaker. The antenna-2 (102) is a transmission / reception antenna, and each circuit connected to the antenna-1 (101) is a polarization diversity reception circuit. FIG. 27 is a component layout diagram showing a state where the high-frequency unit of the mobile wireless terminal shown in FIG. 26 is arranged on a board. FIG.
6. In FIG. 27, the power amplifier 104 shown by hatching is
Generally, the amplifier is constituted by a multi-stage amplifier in which two or three stages are cascade-connected. At least one stage of the multi-stage amplifier is constituted by the high-frequency circuit module of each of the embodiments. As described above, in each of the embodiments, the transmission of the high-frequency signal on the transmission line can be performed without increasing the thickness of the dielectric substrate constituting the multilayer wiring board and without increasing the width of the conductor constituting the transmission line. Since the loss can be reduced, the mobile radio terminal using the power amplifier 104 included in the high-frequency circuit module according to each of the above embodiments can be downsized and have high power efficiency. Needless to say, the high-frequency circuit module of each of the above embodiments can be applied to a mobile phone. As described above, the invention made by the inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and can be variously modified without departing from the gist of the invention. Of course, it is.

[0037]

The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows. (1) According to the present invention, when a dielectric substrate having the same thickness is used, the transmission loss of a high-frequency signal on a transmission line can be reduced as compared with a conventional high-frequency circuit module, and the power efficiency of the high-frequency circuit module is improved. It becomes possible. (2) According to the present invention, the width of the conductor forming the transmission line can be reduced while keeping the transmission loss of the matching circuit constant, so that the high-frequency circuit module can be downsized. (3) According to the present invention, miniaturization and high power efficiency of a portable communication device can be achieved.

[Brief description of the drawings]

FIG. 1 is an exploded perspective view illustrating a structure of a high-frequency circuit module according to Embodiment 1 of the present invention.

FIG. 2 is a cross-sectional view illustrating a main-portion cross-sectional structure of the high-frequency circuit module according to Embodiment 1 of the present invention;

FIG. 3 is a diagram showing an equivalent circuit of the high-frequency circuit module according to the first embodiment of the present invention.

FIG. 4 is a perspective view showing a schematic configuration of a transmission line formed on a single-layer dielectric substrate.

5 is a graph showing transmission loss of a high-frequency signal of the transmission line shown in FIG. 4 calculated by changing the thickness of a dielectric substrate.

6 is a graph showing transmission loss of a high-frequency signal of the transmission line shown in FIG. 4 calculated by changing the width of a conductor.

FIG. 7 is a perspective view showing a schematic configuration of a transmission line formed on a two-layer dielectric substrate.

8 is a graph showing transmission loss of a high-frequency signal of the transmission line shown in FIG. 7 calculated by changing the thickness of a dielectric substrate.

9 is a graph showing transmission loss of a high-frequency signal of the transmission line shown in FIG. 7 calculated by changing the width of a conductor.

FIG. 10 is a perspective view showing a schematic configuration of a transmission line (a transmission line formed on a three-layer dielectric substrate in which a cavity is formed in a second-layer dielectric substrate) according to the first embodiment of the present invention; .

11 is a graph showing the transmission loss of the high-frequency signal of the transmission line shown in FIG. 10 calculated by changing the thickness of the dielectric substrate.

12 is a graph showing transmission loss of a high-frequency signal of the transmission line shown in FIG. 10 calculated by changing the width of a conductor.

FIG. 13 is a graph showing calculated transmission loss of an output-side matching circuit of a conventional high-frequency circuit module.

FIG. 14 is a graph showing a calculated transmission loss of the output-side matching circuit of the high-frequency circuit module according to the first embodiment of the present invention.

FIG. 15 is an exploded perspective view illustrating a structure of a high-frequency circuit module according to Embodiment 2 of the present invention.

FIG. 16 is a cross-sectional view illustrating a main-portion cross-sectional structure of the high-frequency circuit module according to Embodiment 2 of the present invention;

FIG. 17 is an exploded perspective view illustrating a structure of a high-frequency circuit module according to Embodiment 3 of the present invention.

FIG. 18 is a cross-sectional view illustrating a main-portion cross-sectional structure of a high-frequency circuit module according to Embodiment 3 of the present invention.

FIG. 19 is an exploded perspective view showing a structure of a high-frequency circuit module according to Embodiment 4 of the present invention.

FIG. 20 is a cross-sectional view illustrating a main-portion cross-sectional structure of the high-frequency circuit module according to Embodiment 4 of the present invention;

FIG. 21 is an exploded perspective view showing a structure of a high-frequency circuit module according to Embodiment 5 of the present invention.

FIG. 22 is a cross-sectional view illustrating a main-portion cross-sectional structure of a high-frequency circuit module according to Embodiment 5 of the present invention;

FIG. 23 is an exploded perspective view showing a structure of a high-frequency circuit module according to Embodiment 6 of the present invention.

FIG. 24 is a cross-sectional view showing a main part cross-sectional structure of a high-frequency circuit module according to a sixth embodiment of the present invention.

FIG. 25 is a diagram for explaining another example of the cavity in each embodiment of the present invention.

FIG. 26 is a block diagram illustrating a schematic configuration of a mobile wireless terminal to which the high-frequency circuit module according to each of the embodiments of the present invention is applied.

FIG. 27 is a component layout diagram showing a state where the high-frequency section of the mobile wireless terminal shown in FIG. 26 is arranged on a board.

[Explanation of symbols]

1,18,24,30,44,47,51,52,53
... dielectric substrate, 2, 9, 25, 31 ... transmission line, 3,
4, 5, 10, 11, 12 ... chip capacity, 6, 7, 1
3,14,19,29,33,34,36,37,3
8, 39, 45, 48, 49, 54 ... ground conductor, 8 ... input terminal, 15 ... output terminal, 16 ... semiconductor chip, 17 ...
Holes from which dielectric has been removed, 8a, 8b, 15a, 15b, 2
0, 21, 21a, 22, 23, 27, 28 ... through holes, 8c, 15c, 15b, 21b, 28a, 32 ...
Terminal, 35, 41, 55 ... cavity, 40 ... dielectric material, 4
3, 46 conductor, 101 antenna-1, 102 antenna-2, 103 duplexer, 104 power amplifier, 105 filter, 106 driver amplifier, 107
Burst switch, 108, modulator, 109, low noise amplifier, 110, frequency converter, 111, intermediate frequency amplifier, 112, frequency synthesizer, 113, demodulation unit, 114, baseband unit, 115, audio signal processing circuit, 116: microphone, 117: speaker.

Continued on the front page F-term (reference) 5E346 AA13 AA15 AA23 AA42 AA43 AA60 BB02 BB03 BB04 BB07 BB16 CC16 CC17 CC21 DD07 FF01 FF45 HH06 HH22 5J014 CA06 5J067 AA04 CA92 FA16 HA02 HA29 HA33 KA59 KA17 QS01 QS09

Claims (13)

[Claims] 1. A high-frequency circuit module comprising: a lumped element, a semiconductor chip, and a multilayer wiring board having a transmission line on a surface, wherein the lumped element and the semiconductor chip are electrically connected to the transmission line. The multilayer wiring board has a cavity facing the transmission line via a dielectric material that is a constituent material of the multilayer wiring board, and the cavity has at least one cavity below a region where the transmission line is provided. A high-frequency circuit module formed in a portion. 2. The transmission line, comprising: a lumped constant element; a semiconductor chip; and a multilayer wiring board including a dielectric substrate having two or more layers and having a transmission line on a surface of a first-layer dielectric substrate. A high-frequency circuit module in which the lumped element and the semiconductor chip are electrically connected to each other, wherein the multilayer wiring board is opposed to the transmission line via a dielectric material constituting the multilayer wiring board. Wherein the cavity has at least one of the second and subsequent dielectric substrates.
A high-frequency circuit module formed by a hole provided in at least a part of a layered dielectric substrate below a region where the transmission line is provided. 3. The high-frequency circuit module according to claim 1, wherein the cavity is in contact with outside air. 4. A lumped element, a semiconductor chip, and a multilayer wiring board having a transmission line on a front surface and a ground electrode on a back surface, wherein the lumped element and the semiconductor chip are electrically connected to the transmission line. A high-frequency circuit module connected to the multilayer wiring board, wherein the multilayer wiring board has a cavity facing the transmission line and the ground electrode via a dielectric material that is a constituent material of the multilayer wiring board; The high-frequency circuit module according to claim 1, wherein the cavity is formed at least in a part below a region where the transmission line is provided. 5. A lumped element, a semiconductor chip, and a dielectric substrate having three or more layers, a transmission line on the surface of the first dielectric substrate, and a back surface of the lowermost dielectric substrate. A multi-layer wiring board having a ground electrode, wherein the lumped element and the semiconductor chip are electrically connected to the transmission line, wherein the multi-layer wiring board has the transmission line, and A cavity facing the ground electrode via a dielectric material constituting the multilayer wiring board, wherein the cavity is at least one of dielectric substrates of the second and subsequent layers;
A high-frequency circuit module formed by a hole provided in at least a part of a layered dielectric substrate below a region where the transmission line is provided. 6. The high-frequency circuit module according to claim 1, wherein the cavity is formed below a region where a transmission line on an output side of the semiconductor chip is provided. . 7. The high-frequency circuit module according to claim 1, wherein the cavity is formed under a region where a transmission line on an input side of the semiconductor chip is provided. . 8. The transmission device according to claim 1, wherein the length of the cavity in the same direction as the width direction of the transmission line is at least twice as long as the width of the transmission line. 2. The high-frequency circuit module according to item 1. 9. The apparatus according to claim 1, wherein the cavity has a shape similar to that of the transmission line, and has a width that is at least twice as large as the width of the transmission line. 2. The high-frequency circuit module according to claim 1. 10. The multi-layer wiring board according to claim 1, wherein the cavity is filled with a dielectric material having a relative dielectric constant lower than that of the dielectric material forming the multilayer wiring board. High frequency circuit module. 11. The high-frequency circuit module according to claim 1, wherein the dielectric material forming the multilayer wiring board is glass or ceramic. 12. The transmission line according to claim 1, wherein the transmission line is connected to at least a second or later wiring layer or a ground electrode by a through hole.
2. The high-frequency circuit module according to claim 1. 13. A portable communication device comprising: an antenna; and a power amplifier circuit module for amplifying a high-frequency signal radiated from the antenna, wherein the power amplifier circuit module is any one of claims 1 to 12. A mobile communication device comprising the high-frequency circuit module according to claim 1.