JP2002290174A - Power amplifier module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power amplifier module which is small in size, small in thickness and superior in mechanical strength. SOLUTION: A substrate 7 contains a core layer 74, first hybrid layers 71-73 and second hybrid layers 75-77. The core layer 74 is an organic layer which contains glass fibers. The first and second hybrid layers 71-73 and 75-77 consist of a mixture material of an organic resin material and dielectric power and constitute a part of a circuit element, included in a power amplifying part. The first hybrid layers 71-73 are adjacent to one surface of the core layer 74, and the second hybrid layers 75-77 are adjacent to the other surface of the core layer 74.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power amplifying module mainly used for a transmission circuit in a communication device using a microwave band.

[0002]

2. Description of the Related Art In recent years, with the spread of digital mobile communication devices such as portable telephones, demand for a power amplification module used for a transmitter in a microwave band has been increased. The power amplification module is a component of mobile communication devices. In recent years, demands for low voltage operation, high efficiency, and light weight have been increasing along with the miniaturization and high functionality of communication devices, particularly mobile phones. I have.

In a digital mobile communication device, a signal received by an antenna is transmitted to a low-noise amplifier, supplied from the low-noise amplifier to a mixer, modulated, and further transmitted to a baseband through an IF. . Further, the transmission signal generated in the baseband unit is modulated by the mixer unit and transmitted to the power amplification unit circuit, and the signal amplified by the power amplification unit circuit is transmitted to the transmission antenna via a duplexer (Duplexer). . The power amplifier circuit amplifies the signal supplied from the mixer unit to a required power level. The signal output from the power amplifier circuit is
It is supplied to the non-reciprocal circuit section.

The non-reciprocal circuit operates as an isolator, and transmits a signal supplied from the power amplifying circuit to the transmitting antenna, but returns a signal from the transmitting antenna to the power amplifying circuit. To cut. Due to the function of the non-reciprocal circuit, power reflection due to a change in output-side load impedance, signal quality deterioration (increase in noise level), efficiency deterioration, and destruction of a circuit inside the power amplification circuit are caused. Is avoided.

The signal output from the non-reciprocal circuit section normally passes through a power detection section, and the power level is detected. Then, automatic power control (APC, APC, etc.) is performed so that the power transmitted from the power control unit to the power amplification unit circuit is always constant.
Auto Power Control1) is added. For this reason, the output signal from the power amplifier circuit is always controlled to the required power level without increasing unnecessarily or decreasing unnecessarily. The high-order harmonic component of the signal that has passed through the power detection unit is removed by a low-pass filter, transmitted to a duplexer, and further transmitted to a transmission antenna.

[0006] As a material of a substrate constituting the power amplification module, generally, a strip line formed on the substrate is made of a high dielectric constant material in order to reduce the size of the strip line due to the wavelength shortening effect and to reduce microwave transmission loss. A material having a low dielectric loss tangent is used. Specifically, BaO—TiO ₂ —Nd ₂ O ₃
A ceramic powder is used. The substrate has a configuration in which, for example, six dielectric ceramic layers using this ceramic powder are stacked.

The passive elements necessary for the input / output impedance matching circuit and the DC bias circuit of the power amplifier circuit included in the power amplifier module are formed in this substrate.

In this case, the substrate has a structure in which, for example, six dielectric ceramic layers are stacked, and in order to connect passive elements formed on the dielectric ceramic layers, each of the dielectric ceramic layers must be connected. It is necessary to provide a through-hole and fill the through-hole with a conductive filler to establish electrical conduction between the passive elements.

However, since the dielectric ceramic layer cannot be subjected to through-hole processing after firing, a through-hole is formed in advance before firing and a dielectric ceramic plate on which a conductor pattern required for forming a passive element is formed. And a step of forming a substrate by laminating a required number of them is inevitable.

However, since the position of the through hole may be different for each dielectric ceramic plate due to the influence of the firing shrinkage, etc., it is extremely difficult to position the through hole between the ceramic plates. Become. In order to facilitate alignment, it is necessary to take measures such as enlarging the planar shape of the connection pattern provided to connect through holes in each of the dielectric ceramic layers. It will lead to conversion. In fact, in this type of conventional power amplification module, the external dimensions (length and width)
Was set to 5.0 × 5.0 (mm).

In addition, since the dielectric ceramic substrate is warped by firing, the thickness of the dielectric ceramic layer is not uniform, and the amount and thickness of the conductor pattern applied to the dielectric ceramic layer is limited by the dielectric material. There also arises such a problem that it differs for each ceramic layer.

The problem of warpage can be alleviated to some extent by setting the thickness of each of the dielectric ceramic layers to 0.7 mm or more. However, when the thickness of one of the dielectric ceramic layers is set to 0.7 mm or more, the thickness of the substrate becomes, for example, 4.2 mm or more in six layers, which limits the thickness reduction.

Further, the dielectric ceramic layer has the disadvantage that it is brittle and has low mechanical strength. This difficulty becomes more pronounced as the thickness is reduced. Due to the ceramic brittleness, cracks are generated in the substrate due to the pressure applied when the power amplification module is mounted on a motherboard, and the reliability of the power amplification module is significantly impaired. In order to avoid the generation of cracks, it is necessary to set the thickness of one layer of the dielectric ceramic layer to, for example, 0.7 mm or more.

[0014]

SUMMARY OF THE INVENTION An object of the present invention is to provide a power amplifier module which is small, thin and has high mechanical strength.

[0015]

In order to solve the above-mentioned problems, a power amplification module according to the present invention includes a substrate and a power amplification unit. The power amplifier is supported by the substrate.

The substrate comprises at least one core layer;
It includes a first hybrid layer and a second hybrid layer. The core layer is an organic layer containing glass fibers.

The first and second hybrid layers are made of a mixed material obtained by mixing an organic resin material and a dielectric powder, and constitute a part of a circuit element included in the power amplifier.

[0018] The first hybrid layer is adjacent to one surface of the core layer, and the second hybrid layer is adjacent to the other surface of the core layer.

A substrate included in the power amplification module according to the present invention includes a first hybrid layer and a second hybrid layer, and the first and second hybrid layers are made of an organic resin material and a dielectric. Unlike a ceramic substrate, it does not warp, has a high bending strength, and is unlikely to cause breakage, cracking, etc., unlike a ceramic substrate, because it is made of a mixed material mixed with powder. Therefore, the thickness can be reduced, and the reliability is improved.

The first and second hybrid layers are made of a mixed material obtained by mixing an organic resin material and a dielectric powder, and do not contain a reinforcing component such as glass fiber. can do. Since the first and second hybrid layers include a ceramic powder, a dielectric ceramic powder having a high dielectric constant can be selected, and excellent electrical characteristics can be secured as compared with an organic resin substrate.

Further, the substrate has a core layer of an organic layer containing glass fibers, a first hybrid layer is adjacent to one surface of the core layer, and a second hybrid layer is provided on the other surface of the core layer. Since they are adjacent to each other, the first and second hybrid layers are made thinner and thinner, while the mechanical strength is secured by the core layer. Power amplification module can be obtained.

Further, since the core layer, the first hybrid layer, and the second hybrid layer are all organic layers containing an organic material, the whole is laminated in a predetermined order, and then a through hole is formed. The conductive filler can be filled therein. Therefore, there is no room for displacement of the through holes between the layers, and it is not necessary to increase the area of the conductor pattern connecting the through holes in consideration of the relative displacement of the through holes. For this reason, the planar shape (length and width) of the substrate can be reduced.

[0023]

FIG. 1 is a block diagram showing the configuration of a high-frequency circuit section in a digital mobile communication device (compatible with W-CDMA). The signal received by the receiving antenna ANT2 is transmitted to the low noise amplifier AMP, modulated by the mixer MIXR, and sent to the baseband BSB via the IF.

The transmission signal generated in the baseband section BSB is modulated in the mixer section MIXT. Modulation by the mixer MIXT is performed based on a signal supplied from the phase locked loop PLL to the mixer MIXT. After the transmission signal is modulated by the mixer section MIXT, it is supplied to the power amplification section circuit section PWA. The power amplifier circuit unit PWA plays a role of amplifying the transmission signal output from the transmission antenna ANT1 until the power reaches the receiver. The signal amplified by the power amplifier circuit unit PWA is transmitted to the transmitting antenna ANT1 via the duplexer DUP, and is radiated from the transmitting antenna ANT1 into the air.

FIG. 2 is a block diagram showing details of the power amplifier circuit section PWA. Illustrated power amplifier circuit section PW
A is a bandpass filter 1, a power amplification module 2,
It includes a power detection unit 31, a low-pass filter 32, and a non-reciprocal circuit unit 33. From the modulation signal supplied from the mixer section MIXT to the power amplification section circuit section PWA, only necessary frequency components are extracted by the band-pass filter 1,
The power is transmitted to the power amplification module 2. The signal that has passed through the bandpass filter 1 is supplied to the power amplification module 2.

The power amplification module 2 amplifies the signal that has passed through the bandpass filter 1. The signal output from the power amplification module 2 is supplied to the power detection unit 31. Then, when passing through the power detection unit 31, the power level of the signal is detected. The power detection signal is transmitted to the power control unit 3
4 is supplied. The power control section 34 applies APC control to the power amplification module 2 based on the power detection signal supplied from the power detection section 31 to make the output power constant.

From the signal passing through the power detecting section 31, high-order harmonic components are removed by a low-pass filter 32, and the signal is supplied to a nonreciprocal circuit section 33.

The non-reciprocal circuit section 33 constitutes an isolator, and transmits the signal supplied from the power amplifying section 21 to the transmitting antenna ANT1.
The signal returning from the side to the power amplifier 21 is cut. Without the non-reciprocal circuit unit 33, when the output-side load impedance changes due to the operating environment or the like, the power amplified by the power amplifying unit 21 is reflected, returns to the power amplifying unit 21, and returns from the power amplifying unit 21. The quality of the output signal is degraded (increase in noise level), the efficiency is degraded, and the internal circuit of the power amplification unit 21 is broken. The non-reciprocal circuit section 33 is provided to prevent such a problem due to reflection.

The signal passing through the non-reciprocal circuit section 33 is transmitted to a duplexer DUP, and further transmitted to a transmission antenna AN.
It is transmitted to T1. Then, a signal is radiated from the transmitting antenna ANT1 into the air.

The examples shown in FIGS. 1 and 2 are W-CDMA compatible, and the main characteristics required of the power amplification module 2 are as follows.

Frequency (fin) = 1920 to 1980 MHz Output power (Pout) = 27 dBm Power added efficiency (PAE) = 40% or more Adjacent channel leakage power ratio (ACPR) ACPR1 = −38 dBc or less (at 5 MHz) ACPR2 = −48d8c or less (At 10 MHz) The adjacent channel power ratio (ACPR) is 5.0 MHz or 10.0 MHz from the center frequency of the transmission signal.
This is a value representing the noise level at a frequency z away from the power level of the center frequency as a relative ratio. The power added efficiency (PAE) is a ratio of output power to power consumption expressed as a percentage, and a higher value is more preferable.

The power amplifier module 2 is designed so as to obtain the above characteristics when the output load impedance ZIo is 50Ω. Actually, the state of 50 Ω does not constantly remain, and the value of about 30 to 70 Ω can sufficiently change depending on the angle of the antenna, temperature conditions, and the like. The power amplification module 2 can include a non-reciprocal circuit unit.

FIG. 3 is a block diagram of the power amplifier 21 which is a main part of the power amplifier module 2. In the illustrated embodiment, the power amplifying unit 21 includes an input impedance matching circuit 211, a preceding-stage power amplifying semiconductor element 212, a subsequent-stage power amplifying semiconductor element 214, an impedance matching circuit 215, and a DC bias circuit 216.
The power amplification module 2 has an additional or additional circuit part in addition to the power amplification unit 21.

The power amplifying semiconductor elements 212 and 214 are composed of, for example, an HBT (heterojunction bipolar transistor) or an FET (field effect transistor).

The DC bias circuit 216 receives the DC voltage Vcc supplied to the Vcc terminal and the signal Vreg supplied to the Vreg terminal, based on the power amplifying semiconductor element 2.
A DC bias is applied to 12.

From the Pin terminal connected to the band-pass filter 1 (see FIG. 2), the input impedance matching circuit 2
The signal supplied to the power amplifying semiconductor element 212 through 11 is power-amplified by the semiconductor element 212. The signal that has been power-amplified by the semiconductor element 212 is supplied to the power-amplifying semiconductor element 214 and is subjected to a power amplification operation.

The signal subjected to power amplification by the power amplification semiconductor element 214 is supplied to the impedance matching circuit 215 via the impedance matching circuit 215. The impedance matching circuit 215 converts the output impedance of the MMIC 20 into the input impedance (10 to 30Ω) of the non-reciprocal circuit 33.

In the circuit shown in FIG. 3, the power amplification semiconductor element 212 and the power amplification semiconductor element 214
1 packaged MMIC (Microwave Monolithic
IC) 20. The output impedance of the MMIC 20 is converted into a load impedance of 50Ω by the impedance matching circuit 215 and the non-reciprocal circuit unit 33.

The input impedance matching circuit 211
The impedance of 50Ω when the bandpass filter 1 (see FIG. 2) side is viewed from the in terminal is matched with the input impedance of the MMIC 20.
And an LC circuit including capacitors C1 and C2. The signal supplied to the Pin terminal is ideally input to the MMIC 20 without reflection.

The signal input to the MMIC 20 is amplified to a desired power by the power amplifying semiconductor element 212 and the power amplifying semiconductor element 214.

The impedance matching circuit 215 provided on the output side of the MMIC 20 includes an L-type circuit including an inductor L2 and a capacitor C3, a capacitor C4 and an inductor L
3 and a π-type circuit of a capacitor C5 and a DC blocking capacitor C6.

The DC bias circuit 216 has a role to apply a DC bias for operating the power amplifying semiconductor elements 212 and 214 and to prevent the amplified power from leaking outside. Therefore, the inductors L5 and L6 included in the DC bias circuit 216 should ideally have infinite impedance so that the signals amplified by the power amplifying semiconductor elements 212 and 214 do not leak to the Vcc terminal. Can be Therefore, the inductors L5 and L6
Is a (λ / 4) length pattern with respect to the wavelength λ, or
It is composed of an inductor element having an impedance corresponding to a (λ / 4) long pattern.

FIG. 4 is a partial sectional view showing an example of the layer configuration of the power amplification module according to the present invention. The illustrated power amplification module includes the substrate 7 and the MMIC 20. As described above, the MMIC 20 includes the power amplification semiconductor element 212 and the power amplification semiconductor element 214 (see FIGS. 2 and 3).

The substrate 7 has a structure in which seven layers 71 to 77 are stacked. These layers 71 to 77 are formed by a sheet laminating method or a coating method. Layers 71-73
Constitutes a first hybrid layer, layer 74 constitutes a core layer, and layers 75-77 constitute second hybrid layers 75-7.
7 is constituted. The core layer 74 is an organic layer containing glass fibers. The core layer 74 is specifically made of glass fiber-containing plastic (FRP) and has a thickness of, for example, 16%.
0 μm and the relative dielectric constant εr is about 10.

The first hybrid layers 71 to 73 are made of a mixed material obtained by mixing an organic resin material and a dielectric powder.
A part of a circuit element included in the power amplification unit 21 is configured. Unlike the core layer 74, the first hybrid layers 71 to 73 do not include glass fibers and are formed of a mixed layer of a selected organic resin material and a dielectric powder. In the first hybrid layers 71 to 73, as an example, the layer 71 located at the uppermost layer has a thickness of 40 μm or less,
The relative dielectric constant εr is about 3, the middle layer 72 has a thickness of 40 μm or less, the relative dielectric constant εr is about 10, the lowermost layer 73 has a thickness of 40 μm or less, and the relative dielectric constant εr is 1 or less.
Select around 0. The relative permittivity εr can be set to a desired relative value by selecting the organic resin material and the dielectric powder and controlling their contents.

The second hybrid layers 75 to 77 are made of a mixed material obtained by mixing an organic resin material and a dielectric powder.
A part of a circuit element included in the power amplification unit 21 is configured. Also in the second hybrid layers 75 to 77, as an example, the uppermost layer 75 has a thickness of 40 μm or less, a relative permittivity εr of about 10, and a middle layer 76.
Is selected so that the thickness is 40 μm or less, the relative permittivity εr is about 10, and the lowermost layer 77 has a thickness of 40 μm or less and the relative permittivity εr is about 3. The relative permittivity εr can be set to a desired relative value by selecting the organic resin material and the dielectric powder and controlling the contents thereof, as in the case of the first hybrid layers 71 to 73.

The lowermost layer 73 of the first hybrid layers 71 to 73 is adjacent to one surface of the core layer 74, and the uppermost layer 75 of the second hybrid layers 75 to 77 is adjacent to the other surface of the core layer 74. .

In the case of the above-described embodiment, the overall thickness of the substrate 7 is at most 0.5 mm, which can be made thinner than the conventional 0.7 mm.

FIGS. 5 to 12 are diagrams showing patterns of the layers 71 to 77. FIG. FIG. 5 is a plan view of the layer 71 constituting the uppermost layer of the substrate 1 as viewed from the surface. On the surface of the layer 71,
A conductor pattern forming the inductor L1 of the input impedance matching circuit 211 and a capacitor C2 are provided. The capacitors C7 to C9 of the DC bias circuit 216 and the capacitor C of the impedance circuit 215
3, conductor patterns C31 and C41 constituting C4, and conductor patterns constituting inductors L2 and L3 are provided.

FIG. 6 is a plan view showing the surface of the layer 72 adjacent to the layer 71. FIG. The layer 72 has a ground pattern GND
1 is formed.

FIG. 7 is a plan view showing the surface of the layer 73 adjacent to the layer 72. FIG. The layer 73 includes a conductor pattern C that forms the capacitor C1 of the input impedance matching circuit 211.
11 and a conductor pattern C51 forming a capacitor C5 of the impedance circuit 215 are formed. By these conductor patterns C11 and C51 and the ground pattern GND1 formed on the layer 72, capacitors C1 and C5 having the layer 72 as a capacitance layer are obtained.

FIG. 8 is a plan view showing the surface of the core layer 74 adjacent to the layer 73. FIG. A ground pattern GND2 is formed on the core layer 74. Due to the ground pattern GND2 formed on the layer 72 and the conductor patterns C11 and C51 formed on the layer 73, additional capacitors C1 and C5 are formed.
Is obtained.

FIG. 9 is a plan view showing the surface of the layer 75 adjacent to the core layer 74. The layer 75 includes a DC bias circuit 2
Striplines constituting the sixteen inductors L5 and L6 are formed. The other ends of the inductors L5 and L6 are connected to each other and guided to the Vcc terminal.

FIG. 10 is a plan view showing the surface of the layer 76 adjacent to the layer 75, FIG. 11 is a plan view showing the surface of the layer 77 adjacent to the layer 76, and FIG. On the back surface of the layer 77, a ground pattern GND3 is formed.

As described above, in the power amplification module according to the present invention, the substrate 7 is
1 to 73, and second hybrid layers 75 to 77. The first hybrid layers 71 to 73 and the second hybrid layers 75 to 77 are formed by mixing an organic resin material and a dielectric powder. Since it is made of a material, the ceramic substrate 7
Unlike the above, no warpage occurs, the bending strength is large, and breakage, cracks, and the like hardly occur. Therefore, the thickness can be reduced, and the reliability can be improved.

The first hybrid layers 71 to 73 and the second
The hybrid layers 75 to 77 are made of a mixed material in which an organic resin material and a dielectric powder are mixed, and do not contain a reinforcing component such as glass fiber. Therefore, for example, each layer can be remarkably thinned to 40 μm or less. . First hybrid layers 71-73 and second hybrid layers 75-77
Since ceramic powder contains ceramic powder, it is possible to select a dielectric ceramic powder having a high dielectric constant and to secure excellent electrical characteristics as compared with the organic resin substrate 7.

The substrate 7 has a core layer 74 which is an organic layer containing glass fibers. The first hybrid layers 71 to 73 are adjacent to one surface of the core layer 74. Since the second hybrid layers 75 to 77 are adjacent to the surface, the first hybrid layers 71 to 73 and the second hybrid layers 75 to 77 are made thinner and thinner while the core layer 74 is made thinner. Ensures mechanical strength,
As a whole, it is possible to obtain a thin and highly reliable power amplification module having large mechanical strength.

For example, taking the bending strength as an example, the bending strength of a ceramic substrate is 30 to 40 kg / mm ² , while the bending strength of a glass epoxy substrate is 45 to 52 k / m ^2.
g / mm ² . The substrate according to the present invention includes hybrid layers 71 to 73 in which an organic resin material and a dielectric powder are mixed,
Since a combination of 75 to 77 and the core layer 74 containing glass fiber is used, it is possible to secure a bending strength approximately intermediate between the ceramic substrate and the glass epoxy substrate.

The first hybrid layers 71 to 73 and the second
The dielectric powder used to form the hybrid layers 75 to 77 has a relative dielectric constant in the range of 5 to 1000,
It can be selected from ceramic materials having a dielectric loss tangent in the range of 0.00002 to 0.01. Specific examples include titanium-barium-neodymium-based ceramics and titanium-barium-tin-based ceramics.

The organic resin material can be appropriately selected from materials having excellent moldability, workability, laminating adhesiveness, and electrical properties. Organic resin material content is 20 ~
It is preferably in the range of 70 vol%. Specific examples of the organic resin material include a thermosetting resin and a thermoplastic resin. More specifically, epoxy resin, phenol resin, low dielectric constant epoxy resin, polybutadiene resin, BT resin and the like can be mentioned. These resins may be used alone or in combination of two or more. When a mixture of two or more types is used, the mixing ratio is arbitrary.

One preferred example of the organic resin material is a polyvinyl benzyl ether compound. In the laminated structure shown in FIGS. 5 to 12, the layers 71 to 73, the layers 75 to 77
Is a capacitor forming layer, which preferably has a high dielectric constant and a low dielectric loss tangent. Therefore, a polyvinyl benzyl ether compound is used as an organic resin material constituting these layers. As the polyvinyl benzyl ether compound, a compound having a relative dielectric constant in the range of 2.5 to 3.5 and a dielectric loss tangent in the range of 0.0025 to 0.005 is preferably used.

In this case, when the content of the polyvinyl benzyl ether compound is a (vol%) and the content of the ceramic powder is b (vol%), a + b = 100
(Vol%), 40 (vol%) ≦ b ≦ 60 (v
ol%). According to this mixed material, the relative dielectric constant is 7 to 14, and the dielectric loss tangent is 0.01 to 0.002.
Can be realized.

First and second hybrid layers 71 to 7
In 3, 75 to 77, a flame retardant may be further added. Specific examples of the flame retardant include a tetrabromodiphenol A modified polyvinyl benzyl ether compound.

Next, the glass cloth material used for the core layer 74 is mainly composed of SiO ₂ and plays a role of forming the skeleton of the substrate 7. The core layer 74 can be configured by using the glass cloth material as a core and impregnating the core with the above-described organic resin material. Examples of glass cloth compositions that can be used are shown below.

<Example of Composition of Glass Cloth> SiO ₂ : 56 vol% MgB ₂ O ₃ : 10 vol% Al ₂ O ₃ : 17 vol% CaO: 17 vol% A flame retardant can also be added to the core layer 74. Specific examples of the flame retardant include the above-mentioned modified tetrabromodiphenol A modified polyvinyl benzyl ether compound.

FIG. 13 is a sectional view of the substrate 7 used in the power amplification module according to the present invention. In the figure, the same components as those shown in the above-mentioned drawings are denoted by the same reference numerals.

As described above, the core layer 74, the first hybrid layers 71 to 73, and the second hybrid layer 75
Since 77 is a mixed layer containing an organic material, through-holes can be formed after the whole is laminated in a predetermined order, and the conductive fillers 51 to 55 can be filled therein. Therefore, there is no room for displacement of the through holes between the layers 71 to 77, and the conductor patterns C11, C51, L5, L6 and the ground patterns to be connected by the conductive fillers 51 to 55 filled in the through holes. With respect to GND1 to GND3, there is no need to increase the area in consideration of the relative displacement of the through-hole. Therefore, the planar shape (length and width) of the substrate 7 can be reduced.

FIG. 14 is an enlarged sectional view of a portion A in FIG.
In the figure, the same components as those shown in the above-mentioned drawings are denoted by the same reference numerals. As shown in the figure, a through hole is formed in the layer 71, a plating film 61 is applied to the inner surface thereof, and the conductive fillers 51 to 55 are filled in the through hole. Conductive filler 51-
As 55, a conductive paste in which a conductive component, a filler, and an organic vehicle are mixed is used. As the conductive component, metal powder such as Cu and Ag is suitable, and as the organic vehicle, for example, an epoxy resin or a phenol resin is suitable. Specifically, an Ag paste containing a thermosetting resin such as an epoxy resin and an Ag powder can be used.

By applying the above-mentioned conductive paste by screen printing using a metal mask,
The conductive paste can be dripped into the through holes. When a thermosetting resin is used as the organic vehicle, the conductive fillers 51 to 55 can be thermoset to close the through holes. A plating film 62 is applied to the surface of the plating film 61 and the end faces of the conductive fillers 51 to 55. The plating film 62 is, for example, an Au plating film.

FIG. 15 is an enlarged sectional view of the MMIC connection portion. In the figure, the same components as those shown in the above-mentioned drawings are denoted by the same reference numerals. The MMIC 20 is disposed on the conductive fillers 52 to 54. A plating film 62 is attached to the end surfaces of the conductive fillers 52 to 54, and this plating film 62 and the MMIC 2
0 is connected by solder 63. Conductive filler 5
Nos. 2 to 54 are heat-cured and contain an Ag component or the like having good thermal conductivity. Therefore, the heat generated in the MMIC 20 is conducted to the ground pattern GND3 formed on the bottom surface of the layer 77 located at the lowermost layer of the substrate 7 through the conductive fillers 52 to 54 (see FIG. 13). Heat can be efficiently radiated from the entire surface of the GND3.

[0071]

As described above, according to the present invention, it is possible to provide a small and thin power amplifier module having excellent mechanical strength.

[Brief description of the drawings]

FIG. 1 is a block diagram showing a configuration of a high-frequency circuit unit in a digital mobile communication device (W-CDMA compatible) using a power amplification module according to the present invention.

FIG. 2 is a block diagram showing details of a power amplification circuit section PWA in which the power amplification module according to the present invention is used.

FIG. 3 is a circuit diagram showing a specific circuit configuration of the power amplification module according to the present invention.

FIG. 4 is a partial cross-sectional view showing a configuration of the power amplification module shown in FIGS.

FIG. 5 is a plan view of the uppermost layer of the first hybrid layer in the power amplification module shown in FIG. 4 as viewed from the surface.

FIG. 6 is a plan view showing a surface of an intermediate layer of a first hybrid layer in the power amplification module shown in FIG.

FIG. 7 is a plan view showing the surface of the lowermost layer of the first hybrid layer in the power amplification module shown in FIG.

FIG. 8 is a plan view showing a surface of a core layer in the power amplification module shown in FIG.

FIG. 9 is a plan view showing the surface of the uppermost layer of the second hybrid layer in the power amplification module shown in FIG.

FIG. 10 shows a power amplification module shown in FIG.
It is a top view showing the surface of the intermediate layer of the 2nd hybrid layer.

FIG. 11 shows the power amplification module shown in FIG.
It is a top view showing the surface of the lowermost layer of the 2nd hybrid layer.

FIG. 12 is a diagram illustrating the power amplifying module shown in FIG.
It is a top view showing the back of the lowermost layer of the 2nd hybrid layer.

FIG. 13 is a sectional view of a substrate used in the power amplification module according to the present invention.

14 is an enlarged sectional view of a portion A in FIG.

FIG. 15 is an enlarged sectional view of an MMIC connection portion.

[Explanation of symbols]

 2 Power amplification module 71-73 First hybrid layer 74 Core layer 75-77 Second hybrid layer

Claims (9)

[Claims] 1. A power amplification module including a substrate and a power amplification unit, wherein the power amplification unit is supported by the substrate, wherein the substrate has at least one core layer and a first hybrid. And a second hybrid layer. The core layer is an organic layer containing glass fibers, and the first and second hybrid layers are made of an organic resin material and a dielectric powder. The first hybrid layer is made of a mixed material, and constitutes a part of a circuit element included in the power amplification unit. The first hybrid layer is adjacent to one surface of the core layer, and the second hybrid layer is A power amplification module adjacent to the other side of the core layer. 2. The power amplifying module according to claim 1, wherein a circuit element including the first hybrid layer and the second hybrid layer includes the first hybrid layer and the core layer. And a power amplification module electrically connected to the second hybrid layer by a conductive filler filled in a through hole penetrating at the same position. 3. The power amplification module according to claim 1, wherein the first and second hybrid layers are each a plurality of layers and have the same number of layers. A power amplification module. 4. The power amplification module according to claim 2, wherein the conductive filler contains a conductive component and a thermosetting resin. 5. The power amplification module according to claim 1, wherein the first and second hybrid layers have a relative dielectric constant in a range of 7-14 and a dielectric loss tangent. A power amplification module in the range of 0.01 to 0.002. 6. The power amplification module according to claim 5, wherein the content of the organic resin material is 20 to 70 v.
ol% power amplifier module. 7. The power amplification module according to claim 5, wherein the organic resin material includes a polyvinyl benzyl ether compound. 8. The power amplification module according to claim 1, wherein the first and second hybrid layers have a thickness of 40 μm or less. 9. The power amplification module according to claim 2, wherein at least one of the core layer, the first hybrid layer, and the second hybrid layer includes a flame retardant. Including power amplification module.