JP2000208886A - Semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which is economic and capable of preventing a magnetic field from concentrating, and provide a its manufacturing method. SOLUTION: A wiring pattern 2 is formed on a board 1. The wiring pattern 2 includes rectilinear parts as well as rounded parts and corner parts other than the rectangular part. An insulating layer 3 is formed on the rounded parts and corner parts of the wiring pattern 2 except on the rectilinear parts. A magnetic shielding layer 4 is formed on the insulating layer 3. That is, in this circuit board, the magnatic shielding layer 4 is formed on the rounded parts and corner parts of the wiring pattern 2 through the insulating layer 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device having a semiconductor element mounted on a circuit board and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, in a circuit board having a predetermined wiring pattern, electromagnetic field radiation occurs at a corner of the pattern. In a conventional circuit board, measures are taken against the electric field of the electromagnetic field radiation. Specifically, an R structure is adopted at a corner of the pattern.

[0003]

However, in the above-mentioned circuit board employing the R structure in the corner portion of the wiring pattern, measures against electric fields are taken, but measures against magnetic fields are not taken. That is, even if the R structure is adopted, the magnetic field concentrates on the portion of the R structure. There is a problem that the magnetic induction caused by the magnetic concentration adversely affects nearby lines and elements.

To solve this problem, it is conceivable to form a magnetic shield layer on the entire surface of the circuit board, but there is a problem in cost.

The present invention has been made in view of the above circumstances, and has as its object to provide an economical semiconductor device which can prevent concentration of a magnetic field and which is economical.

[0006]

Means for Solving the Problems In order to solve the above problems, the present invention has taken the following means. The present invention is a semiconductor device in which a semiconductor element is mounted on a circuit board having a wiring pattern, the circuit board having a wiring pattern having a linear portion, and a region other than the linear portion of the wiring pattern and the same. There is provided a semiconductor device comprising: a magnetic shield layer formed on an adjacent region via an insulating layer; and a semiconductor element mounted on the wiring pattern.

According to this structure, since the magnetic shield layer formed via the insulating layer is provided on the region (R portion or corner) other than the linear portion of the wiring pattern, the magnetic shield layer is formed by the wiring pattern. The concentration of the magnetic field on the R portion and the corner portion can be reduced. As a result, it is possible to reduce adverse effects on lines and elements in the vicinity due to magnetic induction. Also, since the magnetic shield layer is formed near the R portion and the corner of the wiring pattern, and near the R portion and the corner of the wiring pattern,
It is economically advantageous.

In the semiconductor device of the present invention, the magnetic shield layer is preferably made of Cu or Fe.

Further, the present invention provides a circuit board having a wiring pattern, wherein the substrate body has a wiring pattern having a linear portion, and an insulating layer is formed on a region other than the linear portion of the wiring pattern and on a region in the vicinity thereof. And a magnetic shield layer formed through the substrate.

The present invention also relates to a method of manufacturing a semiconductor device having a semiconductor element mounted on a circuit board having a wiring pattern, the method comprising: forming a wiring pattern having a linear portion on the circuit board; A step of forming an insulating layer on a region other than the linear portion of the wiring pattern, a step of forming a magnetic shield layer on the insulating layer, and a step of mounting a semiconductor element on the wiring pattern of the circuit board, A method of manufacturing a semiconductor device, comprising:

According to this method, concentration of a magnetic field can be prevented, and an economical semiconductor device can be efficiently obtained.

[0012]

Embodiments of the present invention will be specifically described below with reference to the accompanying drawings. FIG. 1 is a diagram showing a configuration of a semiconductor device according to one embodiment of the present invention. In the figure, reference numeral 1 denotes a board which is a board body of the circuit board.
The wiring pattern 2 is formed on the substrate 1. The wiring pattern 2 includes a straight portion, an R portion and a corner other than the straight portion.

An insulating layer 3 is formed in a region other than the linear portion of the wiring pattern 2, that is, in a region including the R portion and the corner portion. Further, a magnetic shield layer 4 is formed on the insulating layer 3. Therefore, in this circuit board,
A magnetic shield layer 4 is formed on an R portion and a corner portion of the wiring pattern 2 and on a region in the vicinity thereof, with an insulating layer 3 interposed therebetween.

A semiconductor element (not shown) is mounted on the element mounting area of the wiring pattern 2. Thus, the semiconductor device of the present invention is configured.

Here, as a material of the insulating layer 3 formed on the R portion and the corner portion of the wiring pattern 2, an electric insulating material generally used in the semiconductor manufacturing field, for example, a resin material is used. Further, the insulating layer 3 may be a film or a patterned layer.

As the material of the magnetic shield layer 4, a material having magnetic shield characteristics, for example, a metal material such as Cu, Fe, Ni, permalloy, or ferrite, or a composite magnetic shield material can be used. In addition, considering the thickness of the magnetic shield layer when applied to an integrated circuit, etc.,
Preferably it is 0.1 to 100 μm. In particular, when applied to a normal circuit board, the thickness of the magnetic shield layer 4 is preferably about 70 μm.

Next, a method of manufacturing a semiconductor device according to the present invention will be described. First, patterning is performed on a substrate 1 having a Cu foil by photolithography and etching to form a predetermined wiring pattern 2. The insulating layer 3 is formed in a region other than the linear portion of the wiring pattern 2, that is, in an R portion or a corner portion. The formation of this insulating layer 3
It can be performed by a method of attaching an insulating film, a method of screen-printing a resin material, or the like.

Next, a magnetic shield layer 4 is formed on the insulating layer 3. The magnetic shield layer 4 is formed by forming a resist layer on a portion other than the insulating layer 3 of the circuit board formed up to the insulating layer 3 and applying a magnetic shield material on the insulating layer 3 by printing or vapor deposition. The thickness of the magnetic shield layer 4 can be adjusted by changing the conditions of the deposition method.

Next, an embodiment performed to clarify the effects of the present invention will be described. 2A and 2B are diagrams for explaining a method for measuring pattern characteristics (ESV method) of a semiconductor device according to the present invention, wherein FIG. 2A is a cross-sectional view and FIG. 2B is a plan view.

As shown in FIG. 2A, an acrylic substrate 1
0, a wiring pattern 2 having a corner is formed on one main surface, a magnetic shield layer 4 is formed on a region including the corner via an insulating layer 3, and a ground is formed on the other main surface of the acrylic substrate 10. The sample in which the layer 5 is formed and the hole 9 that penetrates the acrylic substrate 10 and the ground layer 5 is set in the measuring device. That is, the wiring pattern 2 and the 50Ω termination 7
Are connected by a lead wire 8 through the hole 9, and the wiring pattern 2 and the control unit 6 are connected through the hole 9.

In this ESV measuring apparatus, when a sine wave generated by the control unit 6 is applied (frequency 2 MHz,
When the magnetic shield layer 4 was a 70-μm-thick Cu foil, a slight leakage of the magnetic field was observed, but the magnetic field concentration could be substantially suppressed. When the magnetic shield layer 4 was a 70 μm-thick Fe foil, the magnetic field concentration could be almost completely suppressed.

For comparison, a sample without the insulating layer 3 and the magnetic shield layer 4 was subjected to the same ESV measurement as described above, and it was confirmed that the magnetic field was concentrated near the corners. Note that, when the frequency was increased by a factor of 10, the magnetic field intensity was increased by about 10 dB, and the detected area was widened.

As described above, according to the present invention, since the magnetic shield layer is provided on the R portion, the corner portion, and the vicinity thereof of the wiring pattern via the insulating layer, magnetic concentration is prevented, and the vicinity of the line is prevented. And adverse effects on the element can be prevented.

The present invention is not limited to the above embodiment, but can be implemented with various modifications. Further, the structure of the present invention can be applied to a corner of a high-speed clock line, a high-current pulse line, or the like.

[0025]

As described above, in the semiconductor device of the present invention, the magnetic shield layer formed on the region (R portion or corner) other than the linear portion of the wiring pattern via the insulating layer is provided. Therefore, the magnetic shield layer can reduce the concentration of the magnetic field on the R portion or the corner of the wiring pattern. Further, since the magnetic shield layer is formed at the R and corner portions of the wiring pattern, it is economically advantageous.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of a semiconductor device according to one embodiment of the present invention.

FIGS. 2A and 2B are diagrams for explaining a method for measuring pattern characteristics of the semiconductor device, wherein FIG. 2A is a cross-sectional view, and FIG.
Is a plan view.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Board, 2 ... Wiring pattern, 3 ... Insulating layer, 4 ... Magnetic shield layer, 5 ... Ground layer, 6 ... Control part, 7 ... 50 ohm termination part, 8 ... Lead wire, 9 ... Hole part, 10 ... Acrylic substrate .

Claims (4)

[Claims] 1. A semiconductor device having a semiconductor element mounted on a circuit board having a wiring pattern, the circuit board having a wiring pattern having a linear portion, and a circuit board having an area other than the linear portion of the wiring pattern. A semiconductor device comprising: a magnetic shield layer formed on an area adjacent to the magnetic shield layer via an insulating layer; and a semiconductor element mounted on the wiring pattern. 2. The semiconductor device according to claim 1, wherein said magnetic shield layer is made of Cu or Fe. 3. A circuit board having a wiring pattern, comprising: a substrate body having a wiring pattern having a linear portion; and an insulating layer formed on a region other than the linear portion of the wiring pattern and on a region in the vicinity thereof. And a magnetic shield layer formed on the circuit board. 4. A method for manufacturing a semiconductor device comprising a semiconductor element mounted on a circuit board having a wiring pattern, the method comprising: forming a wiring pattern having a linear portion on the circuit board; Forming an insulating layer on a region other than the linear portion and on a region in the vicinity thereof; forming a magnetic shield layer on the insulating layer; and mounting a semiconductor element on the wiring pattern of the circuit board. A method for manufacturing a semiconductor device, comprising: