JP2000208617A5 - - Google Patents

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Publication number
JP2000208617A5
JP2000208617A5 JP1999010772A JP1077299A JP2000208617A5 JP 2000208617 A5 JP2000208617 A5 JP 2000208617A5 JP 1999010772 A JP1999010772 A JP 1999010772A JP 1077299 A JP1077299 A JP 1077299A JP 2000208617 A5 JP2000208617 A5 JP 2000208617A5
Authority
JP
Japan
Prior art keywords
plug
via hole
layer wiring
interlayer insulating
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999010772A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000208617A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11010772A priority Critical patent/JP2000208617A/ja
Priority claimed from JP11010772A external-priority patent/JP2000208617A/ja
Publication of JP2000208617A publication Critical patent/JP2000208617A/ja
Publication of JP2000208617A5 publication Critical patent/JP2000208617A5/ja
Pending legal-status Critical Current

Links

JP11010772A 1999-01-19 1999-01-19 半導体集積回路及びその製造方法 Pending JP2000208617A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11010772A JP2000208617A (ja) 1999-01-19 1999-01-19 半導体集積回路及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11010772A JP2000208617A (ja) 1999-01-19 1999-01-19 半導体集積回路及びその製造方法

Publications (2)

Publication Number Publication Date
JP2000208617A JP2000208617A (ja) 2000-07-28
JP2000208617A5 true JP2000208617A5 (cg-RX-API-DMAC7.html) 2006-03-02

Family

ID=11759634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11010772A Pending JP2000208617A (ja) 1999-01-19 1999-01-19 半導体集積回路及びその製造方法

Country Status (1)

Country Link
JP (1) JP2000208617A (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6611010B2 (en) 1999-12-03 2003-08-26 Kabushiki Kaisha Toshiba Semiconductor device
JP5364743B2 (ja) * 2011-03-01 2013-12-11 株式会社東芝 半導体装置

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