JP2000208420A - Vapor phase epitaxial growth system and manufacture of epitaxial layer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make it possible to improve treatment performance, by reducing a treatment time for removing a silicon-based deposit out of a total treatment time of vapor phase epitaxal growth. SOLUTION: A silicon wafer 17 is mounted on a scepter 8. An epitaxial growth gas is fed from a nozzle 3 to form an epitaxial layer on the silicon wafer 17. In this case, a carrier gas is fed through a nozzle 6 to a lower space 5 to fill the lower space 5 with the carrier gas. Then, the epitaxial gas fed to an upper space 2 is prevented from sneaking into the lower space 5, and a silicon deposit on a (B) face 16b of the scepter 8 can be prevented. Even when an epitaxial growth step is carried out with an (A) face 16a of the scepter 8 and thereby the silicon-based deposit is deposited on the (A) face 16a, the next epitaxial growth step can be carried out with the (B) face 16b by turning the scepter 8. After that, the silicon-based deposit on both faces of the scepter 8 can be etched and removed in an etching step.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a vapor phase epitaxial growth apparatus for forming an epitaxial layer on a wafer made of silicon or the like by chemical vapor deposition, and a method of manufacturing the epitaxial layer.

[0002]

2. Description of the Related Art Conventionally, a silicon-based thin film such as an insulating film of a semiconductor device or a polysilicon film for a gate electrode is supplied by supplying a raw material gas to an overheated wafer surface and chemically growing the thin film on the wafer by a chemical reaction. It is formed by a phase growth method. As a vapor phase epitaxial growth apparatus for forming an epitaxial layer, for example, there is one as shown in FIG.

In this vapor phase epitaxial growth apparatus, a disk-shaped susceptor 41 is mounted on a turntable 10 having a susceptor support 9 provided in a reaction furnace 40, and a silicon wafer is mounted on a counterbore 42 formed on the susceptor 41. 17
While the silicon wafer 17 is overheated by the coil heater 11 covered with the heater cover 43, an epitaxial growth gas corresponding to an epitaxial layer to be formed is supplied from the gas supply unit 4 via the nozzle 3 while the silicon wafer 17 is overheated. An epitaxial layer 20 is formed. When the epitaxial layer 20 having a desired thickness is obtained, the silicon wafer 17 is taken out, a new silicon wafer 17 is newly mounted, and the epitaxial growth gas is again supplied from the gas supply unit 4 into the reaction furnace. By repeating the above operation, a desired number of silicon wafers on which an epitaxial layer having a desired thickness is formed is obtained.

In this apparatus, when epitaxial growth is performed several times, a silicon deposit 21 is deposited on a portion of the upper surface of the susceptor 41 where the silicon wafer 17 is not mounted. When the silicon-based deposit 21 becomes thicker, the silicon wafer 17 is not placed in the reaction furnace, and the growth of the silicon-based deposit 21 is hindered. Is supplied from the gas supply unit 4 to remove these silicon-based deposits 21.

In order to make the epitaxial layer 20 formed on the silicon wafer 17 uniform, the susceptor 4
1 is mounted on a turntable 10 and rotated during epitaxial growth. Therefore, the upper space 2 of the susceptor 41
It is difficult to completely isolate the lower space 44 of the susceptor 41 and the epitaxial growth gas supplied to the upper space 2 of the susceptor 41 during the epitaxial growth.
4, the silicon-based deposit 45 is also deposited on the lower surface of the susceptor 41.

In the vapor phase epitaxial growth apparatus, the susceptor support 9 of the turntable 10 connects the upper space and the lower space of the susceptor with a window 15 that can be opened and closed. When the epitaxial growth gas is supplied, the window 15 is closed. During supply, the windows 15 are opened to remove silicon-based deposits deposited on both the front and back surfaces of the susceptor 41. A similar vapor phase epitaxial growth apparatus is disclosed in
No. 0292216.

[0007]

However, in such a vapor phase epitaxial growth apparatus as described above, after performing epitaxial growth several times, a dedicated processing time for removing the deposits deposited on the susceptor as described above is required. Therefore, there is a problem that the time required to obtain a desired number of wafers having an epitaxial layer having a desired thickness becomes long. The present invention has been made in view of such conventional problems, and provides a vapor phase epitaxial growth apparatus and an epitaxial layer manufacturing apparatus capable of shortening a time for obtaining a desired number of wafers having an epitaxial layer of a desired thickness. The purpose is to:

[0008]

According to a first aspect of the present invention, there is provided a susceptor having a plate shape on which a wafer can be placed on both sides, and a susceptor having a space therein. A first gas supply means for selectively supplying an epitaxial growth gas for forming an epitaxial layer on a wafer or an etching gas for performing etching to an upper space of the susceptor, and a first gas supply means,
While the epitaxial growth gas is being supplied to the upper space of the susceptor, a second gas supply means for supplying a carrier gas is provided in the lower space of the susceptor.

According to the second aspect of the present invention, there is provided a plate-shaped susceptor on which wafers can be mounted on both sides, a reactor in which the susceptor is provided with a space, and a wafer in an upper space of the susceptor. First gas supply means for supplying an epitaxial growth gas for forming an epitaxial layer thereon; and etching gas in a lower space of the susceptor while the first gas supply means supplies the epitaxial growth gas to an upper space of the susceptor. And second gas supply means for supplying the gas.

According to a third aspect of the present invention, there is provided a heater provided in a lower space of the susceptor, and a heater cover for covering the heater, wherein the heater cover has at least one portion between the heater and the susceptor. The carrier gas or the etching gas supplied from the second gas supply means is supplied from the holes to the space between the susceptor and the heater cover.

Further, in the invention according to claim 4, a plate-shaped susceptor capable of mounting a wafer on both sides, a reactor in which the susceptor is provided with a space therein, and a space above the susceptor, A gas supply means for selectively supplying an epitaxial growth gas for forming an epitaxial layer or an etching gas for etching, and a second gas supply means for supplying a carrier gas to a lower space of the susceptor. In a state where a wafer is mounted on the first surface of the susceptor by using a phase epitaxial growth apparatus, an epitaxial growth gas is supplied from the first gas supply means to the upper space of the first surface of the susceptor, and the second surface of the susceptor is supplied. Supplying the carrier gas from the second gas supply means to the lower space of the susceptor, and turning the susceptor upside down and placing the wafer on the second surface of the susceptor. Supplying an epitaxial growth gas from the first gas supply means to the upper space on the second surface of the susceptor, and supplying a carrier gas from the second gas supply means to the lower space on the first surface of the susceptor; A step of supplying an etching gas from a first gas supply unit to at least an upper space of the susceptor in a state where a wafer is not mounted on the first surface and the second surface of the susceptor.

Further, in the invention according to claim 5, a plate-shaped susceptor on which wafers can be mounted on both sides, a reactor in which the susceptor is provided with a space, and a wafer in an upper space of the susceptor are provided. Using a vapor phase epitaxial growth apparatus including a first gas supply unit for supplying an epitaxial growth gas for forming an epitaxial layer thereon and a second gas supply unit for supplying an etching gas in a lower space of the susceptor, While the wafer is mounted on the first surface, the epitaxial growth gas is supplied from the first gas supply means to the upper space of the first surface of the susceptor, and the second gas is supplied to the lower space of the second surface of the susceptor. A step of supplying an etching gas from the means, and in a state where the susceptor is turned over and the wafer is mounted on the second surface of the susceptor, the susceptor is placed in an upper space of the second surface of the susceptor Supplies the epitaxial growth gas from the first gas supply means, constituted an etching gas and a step of supplying the second gas supply means to the lower space of the first surface of the susceptor.

[0013]

According to the present invention, while the first gas supply means supplies the epitaxial growth gas to the upper space of the susceptor, the first gas supply means supplies the carrier gas to the lower space of the susceptor. Thus, the epitaxial growth gas supplied to the upper space of the susceptor does not flow into the lower space of the susceptor. Therefore, at the time of epitaxial growth, no deposit is deposited on the surface on the lower space side of the susceptor, and epitaxial growth can be performed using both surfaces of the susceptor, and a desired number of wafers having an epitaxial layer of a desired thickness can be obtained. The time to obtain can be shortened.

Further, in the present invention, while the first gas supply means supplies the epitaxial growth gas to the upper space of the susceptor, the first gas supply means supplies the etching gas to the lower space of the susceptor. Therefore, epitaxial growth is performed in the upper space of the susceptor, while etching is performed in the lower space of the susceptor. Therefore, epitaxial growth can be performed using both surfaces of the susceptor alternately, and the time required to obtain a desired number of wafers having an epitaxial layer of a desired thickness can be shortened.

Further, in the invention according to claim 3,
In addition to the effects of the first or second aspect of the present invention, the gas supplied to the lower space of the susceptor is supplied between the susceptor and the heater cover through a hole provided in the heater cover. It moves in the lower space of the susceptor. Therefore, the variation in temperature rise due to the heater in the lower space is suppressed, the susceptor temperature is stabilized, the temperature variation on the surface on which the wafer is mounted can be reduced, and the temperature variation of the wafer can be reduced. Variations in the resistivity of the epitaxial layer due to variations in the temperature of the wafer can be reduced.

According to the fourth aspect of the present invention, the first susceptor has a wafer mounted on the first surface thereof.
Supplying the epitaxial growth gas from the first gas supply means to the upper space of the surface and supplying the carrier gas from the second gas supply means to the lower space of the second surface of the susceptor; With the wafer mounted on the second surface of the susceptor, the first space is placed in the upper space of the second surface of the susceptor.
Supplying an epitaxial growth gas from the gas supply means, and supplying a carrier gas from the second gas supply means to a space below the first surface of the susceptor;
Supplying the etching gas from the first gas supply means to at least the upper space of the susceptor in a state where the wafer is not mounted on the first surface and the second surface, so that the epitaxial growth gas supplied to the upper space of the susceptor is provided. Does not go into the lower space of the susceptor.

Therefore, during the epitaxial growth, no deposit is deposited on the surface on the lower space side of the susceptor. After epitaxial growth is performed using one surface of the susceptor, the susceptor is turned over and the two surfaces of the susceptor are turned over. Then, the deposits deposited on the susceptor during the epitaxial growth may be removed by etching, so that the number of times the deposits deposited on the susceptor are etched can be reduced. Therefore, it is possible to provide a method for manufacturing an epitaxial layer, which can shorten the time for obtaining a desired number of wafers having an epitaxial layer with a desired thickness.

In the invention according to claim 5, the epitaxial growth gas is supplied from the first gas supply means to the upper space of the first surface of the susceptor in a state where the wafer is mounted on the first surface of the susceptor. A step of supplying an etching gas from a second gas supply means to a space below the second surface of the susceptor; and a step of turning the susceptor upside down and placing a wafer on the second surface of the susceptor. A first gas supply means for supplying an epitaxial growth gas from the first gas supply means to the upper space of the surface, and an etching gas to be supplied from the second gas supply means to the lower space of the first surface of the susceptor. The etching gas is supplied to the lower space of the susceptor.

Therefore, when epitaxial growth is performed using the first surface of the susceptor, the deposits deposited on the second surface can be removed by etching, and epitaxial growth can be performed using the second surface of the susceptor. If so, the deposits deposited on the first surface can be removed by etching. Therefore, it is not necessary to provide a time for performing only the etching of the deposit, so that the time for obtaining a desired number of wafers having an epitaxial layer having a desired thickness can be shortened.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described with reference to examples. FIG. 1 is a diagram showing the configuration of the first embodiment of the present invention. The vapor phase epitaxial growth apparatus supplies a reaction furnace 1 for epitaxial growth, a gas supply unit 4 for supplying a gas to an upper space 2 in the reaction furnace 1 via a nozzle 3, and a gas to a lower space 5 via a nozzle 6. Gas supply unit 7
It is composed of

The gas supply unit 4 is provided with an epitaxial growth gas containing a gas such as diborane (B ₂ H ₆ ) for p-doping, phosphine (PH 3) for n-doping, or arsine (ASH 3), if necessary, or etching. Supply gas. The gas supply unit 7 supplies a carrier gas.

In the reaction furnace 1, a turntable 10 having a disk-shaped susceptor support 9 provided with a projection for mounting a susceptor 8 in advance, a susceptor 8 mounted on the turntable 10, A coil heater 11 for heating the inside of the reaction furnace 1, a heater cover 12 covering the coil heater 11,
Nozzle 3 and nozzle 6 are attached.

The reactor 1 is provided with an exhaust port 13 for exhausting gas supplied to the upper space 2 of the susceptor 8 and an exhaust port 14 for exhausting gas supplied to the lower space 5 of the susceptor 8. I have. Open / close valves (not shown) are connected to the ends of the exhaust ports 13 and 14, so that the processing gas of the gas supplied from the gas supply units 4 and 7 is exhausted to the outside. This open / close valve is opened / closed at a desired timing. The susceptor support 9 is provided with a window 15 that can be opened and closed at a position where the susceptor 8 is not closed even when the susceptor 8 is placed.

The susceptor 8 is made of graphite, and is coated with silicon carbide (SiC) so as to withstand high temperatures in the reactor 1 during epitaxial growth. Also,
As shown in FIG. 2A, the susceptor 8 is provided with 18 circular counterbodies 18 for mounting a silicon wafer 17 on each of the front and back surfaces, and at the center thereof, a cylinder for mounting to the susceptor support 9. Holes are provided. Susceptor 8
Is detachably attached to the susceptor support portion 9. One surface of the susceptor 8 is the A surface 16a, and the other surface is the B surface 16
b. The heater cover 12 has a cylindrical shape having an upper surface provided with a hole 19, as shown in FIG. In addition, the gas supply unit 4 constitutes a first gas supply unit in claim 1, and the gas supply unit 7 constitutes a second gas supply unit.

Next, steps of performing epitaxial growth and removing silicon-based deposits using the above-described vapor phase epitaxial growth apparatus will be described with reference to FIGS. First, as shown in FIG. 3A, a silicon wafer 17 is placed on a counterbore 18 of the susceptor 8 attached to the susceptor support 9 with the A surface 16a facing upward. The turntable 10 is rotated while the silicon wafer 17 is overheated by the coil heater 11.

With the window 15 of the susceptor support 9 closed, the gas supply unit 4 allows the epitaxial growth gas to flow out of the nozzle 3 and blows it onto the silicon wafer 17. The epitaxial growth gas is appropriately exhausted from the exhaust port 13.

At the same time, the gas supply unit 7 supplies a carrier gas from the nozzle 6 into the heater cover 12. The carrier gas flows between the upper portion of the heater cover 12 and the susceptor 8 through a hole 19 formed in the heater cover 12,
Air is exhausted from the exhaust port 14 as appropriate. As described above, since the upper space 2 of the susceptor 8 is supplied with the epitaxial growth gas and the lower space 5 of the susceptor 8 is supplied with the carrier gas, the epitaxial growth gas flows from the upper space 2 of the susceptor 8 to the lower space 5. Never.

When a predetermined time has elapsed and the thickness of the epitaxial layer 20 formed on the silicon wafer 17 reaches a desired thickness, the epitaxial growth is terminated. Simultaneously with the formation of the epitaxial layer 20, the A surface 1 of the susceptor 8
In the portion on which the silicon wafer 17 is not placed on 6a,
A silicon-based deposit 21 is deposited. Since the epitaxial growth gas does not flow around the B surface 16b of the susceptor 8, which is the lower surface, no silicon-based deposit is generated.

After removing the silicon wafer 17, the silicon wafer 17 on which an epitaxial layer is to be formed is placed on the susceptor 8, and the epitaxial growth process is similarly repeated.
The above steps are repeated, and when the thickness of the silicon-based deposit 21 exceeds the allowable range, the susceptor 8 is turned over as shown in FIG. 3B, and the susceptor support 9 is turned so that the B surface 16b becomes the upper surface. Put on. The silicon wafer 17 is mounted again, and epitaxial growth is performed.

At this time, although the silicon-based deposit 21 remains on the A surface 16a serving as the lower surface of the susceptor 8, since the epitaxial growth gas does not flow into the lower space 5 of the susceptor 8, the silicon-based deposit 21 is removed. Does not grow. When the epitaxial growth with the silicon wafer 17 placed on the B surface 16b is performed several times, as shown in FIG. 4A, the silicon-based deposit 22 is deposited on the B surface 16b similarly to the A surface 16a. come.

When the thickness of the silicon deposit 22 deposited on the B surface 16b exceeds the allowable range, the silicon deposit is removed using an etching gas. As shown in FIG. 4B, after removing the silicon wafer 17, the window 15 of the susceptor support 9 is opened. Gas supply unit 4
Supplies an etching gas from the nozzle 3.

The etching gas fills the upper space 2 of the susceptor 8 and flows into the lower space 5 of the susceptor 8 through the window 15 of the susceptor support 9. Therefore, the B surface 16
The silicon-based deposit 22 deposited on b and the silicon-based deposit 21 deposited on the lower surface A 16a are also removed at the same time. Thereafter, the epitaxial growth and the silicon-based deposit removal process are repeated in the same manner.

According to the above configuration, the carrier gas is supplied to the lower space 5 of the susceptor 8 during the epitaxial growth, so that the epitaxial growth gas does not flow into the lower space of the susceptor 8, so that the lower surface B of the susceptor 8 Of silicon-based deposits can be prevented. For this reason, when a silicon-based deposit exceeding an allowable range is deposited on the A-side 16a of the susceptor 8 and the A-side 16a becomes unusable, the susceptor 8 is turned over and the B-side 16b on which no silicon-based deposit is deposited. With
The epitaxial growth process can be continued.

When the silicon-based deposit 22 having a thickness exceeding the allowable range is also deposited on the B side 16b, the window 15 of the susceptor support 9 is opened, and an etching gas is supplied to the A side 1b.
The silicon-based deposit 21 deposited on 6A and the silicon-based deposit 22 deposited on the B surface 16b are simultaneously removed. Therefore, during the epitaxial growth, no silicon-based deposit is deposited on the surface on the lower space side of the susceptor 8, and the epitaxial growth can be performed using both surfaces of the susceptor 8, and the epitaxial layer having a desired thickness is provided. The time required to obtain a desired number of silicon wafers can be shortened.

When the carrier gas is supplied to the lower space 5 of the susceptor 8, the gas is supplied into the heater cover 12 and flows out from the hole 19 of the heater cover 12 to the lower surface of the susceptor 8. The carrier gas moves near the lower surface. Therefore, the variation in temperature rise due to the coil heater 11 in the lower space is suppressed, the temperature of the susceptor 8 is stabilized, and the temperature variation on the surface on which the silicon wafer 17 is mounted can be reduced. Can be reduced, so that the variation in the specific resistance of the epitaxial layer caused by the temperature variation in the silicon wafer can be reduced. Further, since the temperature difference between the front and back surfaces of the susceptor 8 also becomes small,
The life of the susceptor 8 can be extended.

FIG. 5 is a diagram showing the configuration of the second embodiment of the present invention. The vapor phase epitaxial growth apparatus supplies a reactor 30 for epitaxial growth, a gas supply unit 34 for supplying an epitaxial growth gas to the upper space 2 in the reactor 30 via the nozzle 3, and a gas for the lower space 5 via the nozzle 6. It comprises a gas supply unit 31.

In the reactor 30, a disk-shaped susceptor support 3 provided with a projection for mounting the susceptor 8 is provided.
2 is provided. Gas supply unit 3
1 supplies a carrier gas or an etching gas as needed. Other configurations are the same as those of the first embodiment shown in FIG. The gas supply unit 34 constitutes a first gas supply unit according to the second aspect, and the gas supply unit 31 constitutes a second gas supply unit.

Next, processing steps using the above-described vapor phase epitaxial growth apparatus will be described. First, as in the process shown in FIG. 3A in the first embodiment, the silicon wafer 17 is placed on the counterbore 18 on the A surface 16a of the susceptor 8 attached to the susceptor support 32, and the gas supply unit 34 To supply an epitaxial growth gas to perform epitaxial growth.

At the same time, the gas supply unit 31
The carrier gas is supplied to the lower space 5 of the susceptor 8 through the circumstance. As described above, the upper space 2 of the susceptor 8 is supplied with the epitaxial growth gas, and the lower space 5 of the susceptor 8 is supplied.
Since the carrier gas is supplied, the epitaxial growth gas does not flow from the upper space 2 of the susceptor 8 to the lower space 5.

When a predetermined time has elapsed and the thickness of the epitaxial layer 20 formed on the silicon wafer 17 reaches a desired thickness, the epitaxial growth is terminated. The above steps are repeated, and when the thickness of the silicon-based deposit 21 exceeds the allowable range, the susceptor 8 is turned over as shown in FIG. 6A, and the susceptor support 32 is turned so that the B surface 16b becomes the upper surface. Put on.

The silicon wafer 17 is mounted again. In the next processing step, the epitaxial growth gas is supplied from the gas supply unit 34, and the etching gas is simultaneously supplied from the gas supply unit 31 to the lower space 5 of the susceptor 8 via the nozzle 6.

While an epitaxial layer is formed on the silicon wafer 17 placed on the B surface 16b of the susceptor 8, the silicon-based deposit 21 deposited on the A surface 16a, which is the lower surface of the susceptor 8, is etched by an etching gas. Is gradually removed. Therefore, after a lapse of a predetermined time, as shown in FIG. 6B, the epitaxial layer 20 is formed on the silicon wafer 17 placed on the B surface 16b, and the silicon deposited on the A surface 16a as the lower surface. System deposit 21
Has been removed and disappeared.

At this time, the silicon wafer 1 on the B surface 16b
The silicon-based deposit 22 is placed on the portion where no
Has been deposited. When the thickness of the silicon-based deposit 22 exceeds the allowable thickness, the susceptor 8 is turned over again,
The silicon wafer 17 is placed on the susceptor 8 such that the A surface 16a faces the upper surface, the silicon wafer 17 is placed on the susceptor 8, and an epitaxial growth gas is supplied to the upper space 2 of the susceptor 8 to perform epitaxial growth. Supplies an etching gas to remove silicon-based deposits.

With the above configuration, an epitaxial growth gas is supplied to the upper space 2 of the susceptor 8, and an etching gas is supplied to the lower space 5 of the susceptor 8, so that the silicon wafer 17 placed on the upper surface of the susceptor 8 An epitaxial layer is formed, and silicon-based deposits deposited on the lower surface of the susceptor 8 are removed by etching.

Therefore, epitaxial growth can be performed using both surfaces of the susceptor 8 alternately, and the time required to obtain a desired number of silicon wafers having an epitaxial layer of a desired thickness can be shortened. In addition, even if an etching gas is supplied to the lower space 5 of the susceptor 8 instead of a carrier gas during the first epitaxial growth,
There is no problem in epitaxial growth. Gas supply unit 31
Need only supply an etching gas, and the configuration can be simplified.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of a first exemplary embodiment of the present invention.

FIG. 2 is a diagram illustrating a configuration of a susceptor and a heater cover.

FIG. 3 is a diagram illustrating a processing step of the first embodiment.

FIG. 4 is a diagram illustrating a processing step of the first embodiment.

FIG. 5 is a diagram showing a configuration of a second exemplary embodiment of the present invention.

FIG. 6 is a diagram illustrating a processing step of the second embodiment.

FIG. 7 is a diagram showing a configuration of a conventional example of the present invention.

[Description of Signs] 1, 30, 40 Reactor 2 Upper space 3, 6 Nozzle 4, 7, 31, 34 Gas supply unit 5, 44 Lower space 8, 41 Susceptor 9, 32 Susceptor support unit 10, 33 Turntable 11 Coil heater 12, 43 Heater cover 13, 14 Exhaust port 15 Window 16a A surface 16b B surface 17 Silicon wafer 18, 42 Counterbore 19 Hole 20 Epitaxial layer 21, 22, 45 Silicon-based deposit

Claims (5)

[Claims] 1. A susceptor having a plate shape capable of mounting a wafer on both surfaces thereof, a reaction furnace in which the susceptor is provided with a space, and an epitaxial layer formed on the wafer in a space above the susceptor. A first gas for selectively supplying an epitaxial growth gas for performing etching or an etching gas for performing etching.
A gas supply means for supplying a carrier gas to a lower space of the susceptor while the first gas supply means supplies an epitaxial growth gas to an upper space of the susceptor; A vapor phase epitaxial growth apparatus comprising: 2. A susceptor in the form of a plate capable of mounting a wafer on both sides thereof, a reactor in which the susceptor is provided with a space, and an epitaxial layer formed on the wafer in a space above the susceptor. First gas supply means for supplying an epitaxial growth gas to be supplied, and while the first gas supply means supplies the epitaxial growth gas to an upper space of the susceptor, an etching gas is supplied to a lower space of the susceptor. A vapor phase epitaxial growth apparatus comprising: a second gas supply unit. 3. A heater provided in a lower space of the susceptor, and a heater cover for covering the heater, wherein the heater cover has at least one hole in a portion sandwiched between the heater and the susceptor. And the second
3. The carrier gas or the etching gas supplied from the gas supply means is supplied from the hole to the space between the susceptor and the heater cover.
The vapor phase epitaxial growth apparatus according to the above. 4. A susceptor in the form of a plate capable of mounting a wafer on both sides, a reactor in which the susceptor is provided with a space, and an epitaxial layer formed on the wafer in a space above the susceptor. A first gas for selectively supplying an epitaxial growth gas for performing etching or an etching gas for performing etching.
A wafer is mounted on the first surface of the susceptor by using a vapor phase epitaxial growth apparatus comprising: a gas supply means for supplying a carrier gas to a lower space of the susceptor; Then, an epitaxial growth gas is supplied from the first gas supply means to the upper space on the first surface of the susceptor, and a carrier gas is supplied from the second gas supply means to the lower space on the second surface of the susceptor. In the state where the susceptor is turned over and a wafer is mounted on the second surface of the susceptor, an epitaxial growth gas is supplied from the first gas supply unit to the upper space of the second surface of the susceptor, A step of supplying a carrier gas from a second gas supply unit to a space below the first surface of the susceptor; and a step in which a wafer is not mounted on the first and second surfaces of the susceptor. In state, the epitaxial layer manufacturing method of comprising the step of supplying an etching gas from the first gas supply means into the upper space of at least the susceptor. 5. A susceptor in the form of a plate capable of mounting a wafer on both sides, a reactor in which the susceptor is provided with a space, and an epitaxial layer formed on the wafer in a space above the susceptor. First gas supply means for supplying an epitaxial growth gas to be formed, and a lower space of the susceptor,
Using a vapor-phase epitaxial growth apparatus having a second gas supply unit for supplying an etching gas, the wafer is placed on the first surface of the susceptor, and the second substrate is placed in the space above the first surface of the susceptor. Supplying an epitaxial growth gas from the first gas supply means and supplying an etching gas from the second gas supply means to a lower space of the second surface of the susceptor; turning the susceptor upside down; With the wafer mounted on the susceptor, an epitaxial growth gas is supplied from the first gas supply means to the upper space on the second surface of the susceptor, and a second gas is supplied to the lower space on the first surface of the susceptor. A method for producing an epitaxial layer, comprising a step of supplying an etching gas from a means.