JP2000199084A - Substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing device which is capable of uniformly processing a substrate even when there is a difference in temperature between the substrate and a chemical. SOLUTION: A substrate processing device 10 is provided with a rotary chuck 14 to maintain a substrate 12 of a liquid crystal display, and a chemical discharge nozzle 16 to discharge a chemical hotter than the substrate 12 to the substrate 12. A discharge outlet 26 of the chemical discharge nozzle 16 is set to discharge more chemical to a peripheral part than to a center part of the substrate 12. Uniform processing is possible by promoting the reaction of the chemical for the peripheral part of the substrate 12 in which the etching is easily insufficient to the center due to the temperature drop.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for processing a rotating substrate by discharging a chemical solution having a different temperature from the substrate.

[0002]

2. Description of the Related Art Conventionally, for example, a substrate processing apparatus shown in FIG. 14 is known. The substrate processing apparatus includes, for example, a chemical solution unit 1 for processing a thin film formed on a glass substrate or the like used for a liquid crystal display with a chemical solution, and the chemical solution unit 1 holds a substrate 2 by vacuum suction. A chuck 3, a motor 4 for driving the rotary chuck 3 to rotate at an arbitrary number of revolutions, a chemical solution discharge nozzle 5 disposed on the substrate 2 and discharging a chemical solution or pure water to the center of the substrate 2 and spreading the whole surface, and pure water discharge Nozzle 6, cup 7 fixed around substrate 2 to prevent chemical solution or pure water discharged onto substrate 2 from scattering outside, and chemical solution or pure water collected by cup 7 are discharged to a waste liquid tank. A waste liquid pipe 8 and the like are provided.

[0003] In the chemical solution sequence, the substrate 2 on which a thin film as an object to be processed is formed is held on a rotary chuck 3 by vacuum suction and then rotated at about 100 rpm.
Then, during rotation, the chemical liquid is discharged from the chemical liquid discharge nozzle 5 to the center of the substrate 2 and spread uniformly over the entire surface of the substrate 2. Subsequently, the chemical solution is shaken off along the substrate 2 and collides with the inner wall of the cup 7, falls and accumulates at the lower part of the cup 7,
It flows into the waste liquid pipe 8 and is collected in the waste liquid tank. After the chemical treatment of the substrate 2 is completed, the substrate 2 is
By rotating the substrate at about 0 rpm, pure water is discharged from the pure water discharge nozzle 6 to the center of the substrate 2 to perform replacement for stopping the chemical solution processing. After completion of the replacement, the pure water is stopped, and the substrate 2 is rotated at a high speed of 2000 rpm to dry.
The pure water shaken off at this time is also collected in the same manner as the chemical solution.

By the way, in order to carry out uniform etching without unevenness, it is necessary to prepare various conditions, and these conditions are established by mutual relations such as temperature, time, flow rate and concentration. However, the chemical solution is different from the substrate temperature,
Specifically, in order to increase the throughput, the temperature is generally set higher than the temperature of the substrate which is room temperature. In particular, in spin etching, the injection portion is likely to be warmed due to the air cooling effect of rotation and the spin-coating of a heated chemical, and also in shower etching, the heated chemical is heated to room temperature due to the enlargement of the substrate. When applied to the substrate, the liquid cooled by heat exchange with the substrate moves from the center to the outer periphery, and the heating speed of the peripheral portion of the substrate becomes slow, and the apparent etching rate decreases. Most chemicals have a higher rate according to the Arrhenius equation as the liquid temperature is higher.Therefore, even after the etching of the central part and the liquid injection part is completed, the liquid is applied to the peripheral part of the substrate and the part between the liquid injection parts. Have a problem that a residual film is formed.

[0005]

As described above, it is difficult to prevent the apparent etching rate of the central portion and the liquid injection portion from being reduced at the peripheral portion of the substrate by etching with a heated chemical solution as in the above-mentioned conventional method. Therefore, there is a problem that a difference occurs between the etching conversion and the pattern conversion ratio between the resist and the post-etching.

An object of the present invention is to provide a substrate processing apparatus capable of performing uniform substrate processing even when there is a temperature difference between a substrate and a chemical solution.

[0007]

According to the present invention, there is provided a substrate processing apparatus comprising: holding means for holding a substrate; rotating means for rotating the holding means; and a chemical discharge for discharging a chemical having a different temperature from the substrate to the substrate. Means, and a reaction adjusting means for adjusting a reaction rate of a chemical solution from a central portion to a peripheral portion of the substrate based on a temperature relationship between the substrate and the chemical solution.

In this configuration, when a chemical solution having a temperature different from that of the substrate is discharged to the rotating substrate for processing, a difference in reaction between the central portion and the peripheral portion due to a change in the temperature of the chemical solution on the substrate. And uniform processing can be performed. For example, when a chemical solution having a higher temperature than the substrate is discharged and processed, the reaction of the chemical solution is promoted with respect to the peripheral portion where the processing is likely to be insufficient with respect to the central portion due to the temperature drop, so that the uniformity is achieved. Processing becomes possible.

[0009] The structure of the chemical solution discharging means and the reaction adjusting means is, for example, to adjust the amount of the chemical solution discharged based on the temperature relationship between the substrate and the chemical solution, adjust the discharge concentration of the chemical solution, and A chemical solution discharge nozzle that adjusts the discharge component, adjusts the discharge temperature of the chemical solution, or adjusts the discharge time is used.

Further, as a configuration of the reaction adjusting means, for example, a temperature adjusting means for adjusting the temperature of the substrate by heating or cooling based on the temperature relationship between the substrate and the chemical solution is used.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the substrate processing apparatus according to the present invention will be described below with reference to the drawings.

In FIGS. 1 and 2, reference numeral 10 denotes a substrate processing apparatus which is a substrate chemical liquid processing apparatus.
For example, it has a chemical solution section 11 for processing, ie, etching, a thin film formed on a glass substrate or the like used for a liquid crystal display with a chemical solution. And this chemical part 11
A rotating chuck 14 as a holding means for holding the substrate 12 by vacuum suction, a rotating shaft connected to the rotating chuck 14, a motor 15 as a rotating means for rotating and driving at an arbitrary number of rotations, and disposed on the substrate 12. A chemical solution discharging nozzle 16 serving as a chemical solution discharging means and a reaction adjusting means for discharging a chemical solution such as a developing solution onto the substrate 12 to spread it over the entire surface.
A pure water discharge nozzle (not shown) as pure water discharge means for discharging pure water to the entire surface, and fixed around the periphery of the substrate 12 to prevent the chemical solution discharged on the substrate 12 or the pure water from scattering to the outside. A rectifying plate / inner cup 19 that covers the outer cup 18 and the motor 15 and is provided below the neck portion of the rotary chuck 14 to guide the flow of waste liquid, and a waste liquid (not shown) that recovers the chemical solution or pure water collected by the cups 18 and 19. It is provided with a waste liquid pipe 21 for discharging to a tank. The main body of the motor 15 and the outer cup 18 are fixed to the base 22, and the current plate and inner cup 19 is fixed.
Is fixed to the outer cup 18, the base 22, and the like. Further, the chemical liquid discharge nozzle 16 is rotatably supported by the base 22 about a shaft 24, and is driven at an arbitrary speed by a driving unit (not shown) from a discharge position shown in FIG. 2 to a retracted position. The entire substrate processing apparatus 10 is controlled by a control device (not shown) including a CPU and the like.

The chemical solution discharge nozzle 16 is provided with a plurality of discharge ports 26 facing the substrate 12 along the longitudinal direction, and these discharge ports 26 are positioned from the position facing the center of the substrate 12. The diameter is gradually increased toward the position facing the peripheral portion of the substrate 12, so that the discharge amount of the chemical solution is increased.

In the chemical solution sequence, a substrate 12 on which a thin film, which is an object to be processed, is formed by applying a resist or the like, is held on a rotary chuck 14 by vacuum suction, and then is applied for 100 r.
Rotate at about pm. Then, during rotation, the chemical liquid discharge nozzle 16 discharges a chemical liquid heated at a temperature higher than the temperature of the substrate, which is room temperature, to the substrate 12 in order to increase the throughput.
Spread evenly over 12 Subsequently, the chemical solution is shaken around along the substrate 12, collected in the current plate / inner cup 19 and the outer cup 18, flows into the waste liquid pipe 21, and is collected in the waste liquid tank. Then, after the chemical treatment of the substrate 12 is completed, the substrate 12 is rotated again at about 100 rpm, and pure water is discharged from the pure water discharge nozzle to the center of the substrate 12 to perform replacement for stopping the chemical treatment. Do. Then, after completion of the replacement, the pure water is stopped, and the substrate 12 is rotated at a high speed of 2000 rpm to be dried. The pure water shaken off at this time is also collected in the same manner as the chemical solution.

According to this embodiment, when a chemical solution having a higher temperature than the substrate 12 is discharged to the rotating substrate 12 for processing, the processing tends to be insufficient at the central portion due to a decrease in temperature. By promoting the reaction of the chemical solution on the peripheral portion, uniform etching processing without spots can be realized. In other words, when a heated chemical is applied to the substrate 12 at room temperature in order to increase the throughput, in the spin etching, due to the air cooling effect by rotation or the spin-coating of the heated chemical, the injection part is easily heated, and Also in the case of shower etching, when a heated chemical solution is applied to a substrate at room temperature due to the enlargement of the substrate 12, the liquid cooled by heat exchange with the substrate 12 moves from the center to the outer periphery, and the peripheral portion of the substrate is heated. The heating speed becomes slow. On the other hand, a general chemical solution is shown in FIG.
As shown in (b), according to the Arrhenius equation, the higher the liquid temperature, the higher the rate. Therefore, when the heating chemical is applied to the center of the substrate 12, the apparent etching rate decreases at the peripheral portion of the substrate 12, as shown by the line A in FIG. Therefore, the discharge port 26 of the chemical liquid discharge nozzle 16 is gradually increased in diameter from a position facing the center of the substrate 12 to a position facing the peripheral portion of the substrate 12,
The state in which the flow rate of the chemical solution, that is, the discharge amount of the chemical solution is set to be large, that is, the peripheral portion is heated more to the center of the substrate 12 using the difference in the liquid amount as shown in FIG. By doing so, the apparent decrease in the etching rate in the peripheral portion can be corrected, and the etching rate in each portion of the substrate 12 can be made uniform as shown by the line B in FIG.
In this way, it is possible to prevent a residual film from being formed in the peripheral portion of the substrate 12 or in a portion between the liquid injection portions, and to eliminate problems such as a difference in a residue between the etching and a pattern conversion ratio between the resist and the etched portion. Product quality can be improved.

Means for adjusting the flow rate of the chemical solution is to adjust the shape and diameter of the discharge port 26, change the number of nozzles and the supply position density, and increase the discharge amount, that is, the flow rate, of the chemical solution in the peripheral portion. As long as the substrate heating rate and flow rate, that is, micro-fluid exchange is accelerated to achieve uniform etching, various configurations can be adopted.
As shown in FIG. 5, a plurality of discharge ports 26 having the same diameter can be formed, and more discharge ports 26 can be disposed in a portion facing the peripheral portion than in a portion facing the center of the substrate 12. . In the configuration shown in FIG. 4 and FIG.
12 is supported via a spacer pin 28.

Further, as a means for promoting the reaction, a large amount of chemical liquid is discharged from the central part of the substrate to the peripheral part by the chemical liquid discharge nozzle, and for example, a large number of discharge ports are provided from the central part of the substrate toward the peripheral part. In addition, in addition to having a discharge port that discharges a large amount of a chemical solution from the central portion of the substrate toward the peripheral portion, a high-concentration chemical solution is discharged from the central portion of the substrate to the peripheral portion,
It is possible to discharge a chemical that promotes the reaction of the chemical solution from the central part of the substrate to the peripheral part, or to use a time difference in which the processing of the peripheral part is started earlier than the central part of the substrate. Further, as a means for accelerating the reaction, a high-temperature chemical solution can be discharged from the central part of the substrate to the peripheral part, and the peripheral part can be heated directly from the central part of the substrate or indirectly through the holding means. .

Next, a description will be given of a configuration in which an apparent etching rate in the periphery of the substrate 12 is prevented from lowering by utilizing a time difference in applying the etching solution, and a uniform etching process is performed. Hereinafter, the same parts as those in the above-described embodiment are denoted by the same reference numerals, and description thereof will be omitted.

That is, as shown in FIG. 6, in this embodiment, the chemical solution discharge nozzle 16 is movable, for example, an arm portion 16a is provided so as to be rotatable by a predetermined angle about a fulcrum 16b. Is moved from the standby area (i) where the discharge port 26 is located off the substrate 12 to a position (ii) facing the center of the substrate 12. Then, the chemical liquid is discharged from the discharge port 26 at a predetermined timing in accordance with this movement.

Also in this configuration, in the chemical solution sequence, the substrate 12 on which the thin film as the object to be processed is formed by applying a resist or the like is supported on the rotary chuck 14 by vacuum suction, and then rotated at about 100 rpm. Let it. And
During the rotation, the chemical solution discharge nozzle 16 is moved from the standby area (i) where the substrate 12 is removed from the outer cup 18 while discharging the chemical solution heated at a temperature higher than the temperature of the substrate, which is room temperature, from the discharge port 26 in order to increase the throughput. Substrate 12
To the position (ii) facing the center of the. In particular, in this embodiment, for uniform etching, the chemical solution discharge nozzle 16 moves slowly toward the center of the substrate 12 and gradually moves toward the center. Then, a chemical solution is spread over the entire surface of the substrate 12 and a chemical solution treatment is performed for a predetermined time.
m. for 2 seconds to shake off the chemical solution on the substrate 12. Then, the dislodged chemical is applied to the current plate and inner cup 19.
And is collected in the outer cup 18, flows into the waste liquid pipe 21, and is collected in the waste liquid tank. Next, the substrate 12 is set at 100 rpm.
Then, pure water discharge is started from a pure water discharge nozzle (not shown), and the chemical liquid remaining on the substrate 12 is replaced with pure water to stop the chemical liquid processing. After the replacement, the discharge of the pure water is stopped, and the substrate 12 is rotated at a high speed of 2000 rpm to dry. Also, the pure water that is shaken off at the time of washing and drying, that is, drainage, scatters on the side wall, is collected by the outer cup 18 and the like, flows into the waste liquid pipe 21, and is collected by the waste liquid tank.

According to the embodiment shown in FIG. 6, for a general chemical solution according to the Arrhenius equation shown in FIG. 3B, a chemical solution having a higher temperature than the substrate 12 is discharged onto the rotating substrate 12. During the etching process, the liquid cooled by heat exchange with the substrate 12 moves from the center of the substrate 12 to the outer periphery, and the processing is likely to be insufficient for the central portion of the substrate 12 due to the temperature drop. 3A, the apparent decrease in the etching rate shown by line A in FIG. 3A is corrected by the etching time difference at which the application of the chemical solution is started earlier. As shown in the figure, the etching rate in each part of the substrate 12 is made uniform, so that a uniform etching process without unevenness or etching residue can be realized.

That is, the apparent decrease in the etching rate at the time of etching is converted into time, and the time difference is defined as the time for applying the chemical solution from the periphery of the substrate 12 toward the center, ie, the time difference is defined as the time of the arm 16a. By converting the speed to the moving speed and slowing the peripheral portion of the substrate 12 gradually toward the center, the etching rate in each portion of the substrate 12 can be made uniform. In this way, it is possible to solve the problems such as the remaining of the etching and the difference between the resist and the pattern conversion ratio after the etching, and to improve the quality of the product.

The configuration utilizing the time difference for discharging the chemical is not limited to the one shown in FIG. 6. For example, the chemical can be discharged while moving the chemical discharge nozzle 16 from the center to the outer peripheral side. Further, the chemical solution discharge nozzle 16 may be moved in parallel instead of rotating, or a plurality of discharge ports 26 may be moved.
Using the chemical solution discharge nozzle 16 provided with
With the 16 stopped, the liquid medicine can be sequentially discharged from each discharge port 26 with a time lag.

Next, a description will be given of a configuration in which the temperature of the peripheral portion of the substrate 12 is made higher than the temperature of the central portion thereof, thereby preventing a decrease in the apparent etching rate in the periphery of the substrate 12 and performing a uniform etching process. . Hereinafter, the same parts as those in the above-described embodiment are denoted by the same reference numerals, and description thereof will be omitted.

In the embodiment shown in FIG. 7, the chemical solution section 11 is provided with a chemical solution discharge nozzle 32 having a discharge port 31 facing the center of the substrate, and a discharge port 33 facing the center of the substrate. A pure water discharge nozzle 34 is provided. Further, a transfer arm unit 36 that supplies the substrate 12 to the chemical solution unit 11 is provided adjacent to the chemical solution unit 11. The transfer arm 36 has a cylinder 41 fixed to the outer cup 18 or the base 22 or the like.
And a transfer arm 42 connected to the cylinder 41. The transfer arm 42 is driven up and down by the cylinder 41 to transfer the substrate 12 stored in the cassette 44 to the rotary chuck 14.

Further, the transfer arm portion 36 is in contact with the transfer arm 42 and heats the peripheral portion of the substrate 12 via the transfer arm 42 as a heating plate 46 as a heating means as a temperature adjusting means. , And at least one of an electromagnetic wave heating device such as an infrared heater 37 that is inclined and disposed above the transfer arm portion 36, and the transfer arm 42 alone or the transfer arm 42 on which the substrate 12 is mounted, or the substrate 12 Is partially heated by direct heat transfer or heat radiation. At the time of etching, by increasing the temperature of the peripheral portion from the central portion of the substrate 12 as shown in the substrate temperature ratio shown in FIG.
Even if heat cooled by heat exchange with the substrate 12 moves outward from the center and moves around the substrate 12, the temperature of the substrate 12 becomes uniform,
Correct the apparent decrease in the etching rate in the peripheral area,
As shown by the line B in FIG. 3 (a), the etching rate in each part of the substrate 12 is made uniform to solve the problems such as the remaining of the etching and the difference between the resist and the pattern conversion ratio after the etching. Quality can be improved.

Also in this configuration, in the chemical solution sequence, the substrate 12 on which a thin film as an object to be processed is formed by coating a resist or the like is held on a rotary chuck 14 by vacuum suction, and then rotated at about 100 rpm. Let it. Then, during rotation, the chemical liquid discharge nozzle 32 discharges a chemical liquid heated to a temperature higher than the temperature of the substrate, which is room temperature, to the substrate 12 in order to increase the throughput, spreads the liquid uniformly over the entire surface of the substrate 12, and performs the chemical liquid for a certain time. After the processing, the substrate 12 is rotated at 500 rpm for 2 seconds to shake off the chemical solution on the substrate 12. Then, the shaken liquid is supplied to the current plate / inner cup 19 and the outer cup.
The waste liquid is collected in the waste liquid pipe 21 and flows into the waste liquid pipe 21 to be collected in the waste liquid tank. Next, the speed of the substrate 12 is reduced to 100 rpm, the discharge of pure water from the pure water discharge nozzle 34 is started, the chemical solution remaining on the substrate 12 is replaced with pure water, and the chemical solution process is stopped. And
After the replacement, the discharge of the pure water was stopped, and the substrate 12 was 2,000 r.
Spin at high speed at pm to dry. Also, the pure water that is shaken off at the time of washing and drying, that is, drainage, scatters on the side wall, is collected by the outer cup 18 and the like, flows into the waste liquid pipe 21, and is collected by the waste liquid tank.

The configuration for increasing the temperature of the peripheral portion from the central portion of the substrate 12 can take various configurations. In addition to directly heating the substrate 12 and heating the transfer arm 42,
A heater is buried in the peripheral portion of the substrate 12 such as the rotary chuck 14 where the substrate 12 is in close contact with the substrate during transfer or chemical treatment, or heated, or a substrate 12 in close contact with a hot plate or the like in the middle.
The peripheral part is closely attached, or the central part of the object that is in close contact with the substrate 12 is formed with a groove or a hole to roughen the surface, thereby lowering the contact area density, that is, heat transfer heat, or the peripheral part of the object that adheres to the substrate 12. Increasing the material thickness to increase the amount of heat transfer and heat capacity, placing thicker materials with poor thermal conductivity in the center or increasing the mixing ratio of materials that are in close contact with the substrate 12, and electromagnetic wave heating devices such as infrared heaters The substrate 12 and the peripheral portion of the object that adheres to the substrate 12 are strongly heated, or the substrate 12 and the peripheral portion of the object that adheres to the substrate 12 are heated at a low temperature. Various configurations, such as heating by applying a gas such as nitrogen or increasing the temperature of a chemical solution discharged to the peripheral portion, can correct the substrate heating rate and achieve uniform etching.

For example, as shown in FIG.
On the lower surface of 14, a heating plate 51 as a heating means as a temperature adjusting means
Is brought into close contact, and the substrate 12 is
Can be heated to heat the substrate 12 after being transferred to the rotary chuck 14. And in this configuration, the rotating chuck
Form grooves or protrusions on the lower surface of 14 with a predetermined pattern,
By increasing the contact area between the rotary chuck 14 and the hot plate 51 at the periphery of the substrate 12 at the periphery thereof, the temperature at the periphery of the substrate 12 at the periphery of the substrate 12 is increased as shown in FIG. Can be raised.

For example, as shown in FIG.
The heating lid 53 is arranged on the upper side of the heating lid 53, and a heating plate 54 as a heating means as a temperature adjusting means capable of adjusting the temperature is arranged at an outer peripheral portion of the heating lid 53, that is, at a position facing the periphery of the substrate 12. Can also. Then, in this configuration, when the chemical solution cooled by heat exchange with the substrate 12 moves to the peripheral portion, the temperature can be kept constant by heat exchange with the heating lid 53, as shown in the substrate temperature ratio shown in FIG. In addition, the temperature of the periphery of the substrate 12 can be higher than that of the center. In addition, the heating lid 53 also has a function of preventing exhaust discharge and evaporation due to scattering at the time of liquid injection, and furthermore, to reduce the change of the chemical liquid, and to control the flow of the chemical liquid and the amount of heat exchange, the radial, A spiral, spiral, lattice-shaped groove or the like can also be formed.

For example, as shown in FIG. 10, when heating the substrate 12 in close contact with the rotary chuck 14, it is necessary to heat the rotary chuck 14 having a larger heat capacity than the substrate 12. Use a rotary chuck 14 with a function to adjust the temperature by embedding a heater etc. in the part, or
A heating plate 57 that moves up and down in a cylinder 56 or a heating means 57 such as an infrared heater is provided to heat the periphery of the rotary chuck 14 by close contact heat transfer or heat radiation, and to heat a portion of the rotary chuck 14 facing the substrate peripheral portion. By increasing the heat transfer amount and the heat capacity, the temperature of the peripheral portion of the substrate 12 can be raised more than the central portion of the substrate 12 as shown in the substrate temperature ratio shown in FIG.

Further, for example, as shown in FIG. 11, warming nozzles 59 and 60 are arranged toward the periphery of the substrate 12 or the rotary chuck 14, and warm water and warm are heated from these warming nozzles 59 and 60. By discharging a low-active etching solution, a heating gas such as nitrogen, and the like, the peripheral portion of the rotary chuck 14 is heated by heat transfer, and the substrate 12 is heated to a temperature similar to the substrate temperature ratio shown in FIG.
The temperature at the peripheral portion can be higher than that at the center.

Also, as shown in FIG.
A high-temperature chemical solution discharge nozzle 61 constituting a chemical solution discharge nozzle is provided facing the peripheral portion of
The chemical liquid having a higher temperature than the chemical liquid discharged from the normal chemical liquid discharge nozzle 32 is directly discharged to the peripheral portion of the substrate 12 while oscillating, and as shown in the substrate temperature ratio shown in FIG. Therefore, the temperature of the peripheral portion can be increased.

Further, by discharging a chemical solution having a different concentration to the peripheral portion of the substrate 12 than the central portion, or by discharging a chemical solution of a different component mixed and reacted with other chemicals, A decrease in the apparent etching rate around 12 is prevented, no difference is generated in the pattern conversion ratio after etching, and a uniform etching process without any remaining etching can be performed, thereby improving the quality of the product. . For example, increase the concentration of the chemical solution in the peripheral part from the center of the substrate,
Alternatively, a chemical solution for increasing the etching rate is mixed to increase the reactivity, and the etching rate around the substrate 12 is increased so that the chemical solution cooled by heat exchange with the substrate moves from the center of the substrate toward the outer periphery. However, a uniform etching process can be realized.

For example, as shown in FIG. 12, a high-concentration chemical solution discharge nozzle 66 is provided toward the peripheral portion of the substrate 12, and the high-concentration chemical solution discharge nozzle 66 is oscillated to discharge the high-concentration chemical solution. It is possible to improve the flow rate below the portion where the high concentration chemical solution is discharged, that is, the etching rate in the peripheral portion.

For example, as shown in FIG.
A lid 68 is provided above the upper portion 12, and discharge ports 31 and 33 for the chemical solution discharge nozzle 32 and the pure water discharge nozzle 34 are provided in the center of the lid 68. A discharge port of the chemical liquid discharge nozzle 66 may be provided. In addition, in the configuration in which the lid 68 is provided, a chemical solution can be held between the substrate 12 and the lid 68, and a function of preventing exhaust discharge and evaporation due to scattering during injection can be realized. Furthermore, in order to reduce the change of the chemical solution and to suppress the flow such as mixing of the chemical solution, radial, spiral, spiral,
Alternatively, grooves such as a lattice shape can be provided. Also,
When the rotation of the substrate 12 is stopped in this configuration, etching proceeds only in the vicinity of the discharge port, and the loading effect can be locally corrected.

The chemical shown in FIG. 12 or FIG. 13 is, for example, ITO (Indium Tin Oxi).
de) When a hydrochloric acid / nitric acid / water system is used as the etching solution for the pixel electrode formed by the film, a mixed solution of hydrochloric acid / nitric acid is discharged from the high concentration chemical solution discharge nozzle 66, and about 3% oxalic acid solution is used. In this case, an oxalic acid solution of about 6% is discharged from the high concentration chemical liquid discharge nozzle 66. Also, when a chemical solution having an increased etching rate is mixed to increase the reactivity, the chemical solution is similarly discharged from the high-concentration chemical solution discharge nozzle 66. As an example of the chemical solution used, phosphoric acid / nitric acid /
When using an acetic acid / water (16: 1: 2: 1) system, use a mixture of phosphoric acid / nitric acid and hydrofluoric acid.

In this configuration, in the chemical solution sequence, the substrate 12 on which a thin film as an object to be processed is formed by coating a resist or the like is held on a rotary chuck 14 by vacuum suction, and then rotated at about 100 rpm. . Then, during rotation, the chemical solution discharge nozzle 32 and the high-concentration chemical solution discharge nozzle
From 66, the chemical solution heated to a temperature higher than the substrate temperature, which is room temperature, is discharged onto the substrate 12 to increase the throughput, spread uniformly over the entire surface of the substrate 12, and after performing the chemical solution treatment for a certain period of time, the substrate
The substrate 12 is rotated at 500 rpm for 2 seconds to shake off the chemical solution on the substrate 12. Then, the dislodged chemical solution is collected in the current plate / inner cup 19 and the outer cup 18, and the waste liquid piping 21
And is collected in the waste liquid tank. Next, the speed of the substrate 12 is reduced to 100 rpm, the discharge of pure water from the pure water discharge nozzle 34 is started, the chemical solution remaining on the substrate 12 is replaced with pure water, and the chemical solution process is stopped. After the replacement, the discharge of the pure water is stopped, and the substrate 12 is rotated at a high speed of 2000 rpm to dry. Also, the pure water that is shaken off at the time of washing and drying, that is, drainage, scatters on the side wall, is collected by the outer cup 18 and the like, flows into the waste liquid pipe 21, and is collected by the waste liquid tank.

As described above, by increasing the concentration of the chemical solution in the peripheral portion of the substrate 12 from the central portion of the substrate 12 at the time of etching, or by increasing the reactivity by mixing a chemical solution having a faster etching rate, the apparent etching rate can be reduced. It is possible to improve the quality of the product by preventing the deterioration, making the etching rate in each part of the substrate 12 uniform, and solving the problems such as the remaining of the etching and the difference between the resist and the pattern conversion ratio after the etching.

In each of the above embodiments, a description has been given of a configuration in which a chemical solution having a higher temperature than the substrate 12 is discharged and the processing speed is increased as the temperature is higher. However, the present invention is not limited to this. A chemical solution having a higher temperature than the substrate 12 may be discharged, and a chemical having a lower temperature may have a higher processing speed.

Further, the present invention is not only an apparatus for etching or developing a thin film formed on a glass substrate or the like used for a liquid crystal display with a chemical solution, but also for cleaning a silicon substrate used for a semiconductor wafer, for example. The present invention can be applied to a substrate processing apparatus used when performing an etching process or a coating process with a coating agent.

[0042]

According to the substrate processing apparatus of the present invention, when a chemical solution having a temperature different from that of the substrate is discharged onto the rotating substrate for processing, the processing tends to be uneven at the central portion due to a temperature change. By adjusting the reaction of the chemical solution with respect to the peripheral portion, uniform treatment can be performed, and the quality of the product can be improved.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an embodiment of a substrate processing apparatus according to the present invention.

FIG. 2 is a plan view of the substrate processing apparatus.

FIG. 3 is a graph illustrating an operation of the substrate processing apparatus. (A) is the apparent etching rate ratio between the present embodiment and the conventional configuration. (B) is the etching rate ratio according to the Arrhenius equation of a general chemical. (C) is the substrate temperature when corrected in the present embodiment. ratio

FIG. 4 is a cross-sectional view showing another embodiment of the substrate processing apparatus of the present invention.

FIG. 5 is a plan view of the substrate processing apparatus.

FIG. 6 is a sectional view showing still another embodiment of the substrate processing apparatus of the present invention.

FIG. 7 is a cross-sectional view showing still another embodiment of the substrate processing apparatus of the present invention.

FIG. 8 is a cross-sectional view showing still another embodiment of the substrate processing apparatus of the present invention.

FIG. 9 is a cross-sectional view showing still another embodiment of the substrate processing apparatus of the present invention.

FIG. 10 is a sectional view showing still another embodiment of the substrate processing apparatus of the present invention.

FIG. 11 is a sectional view showing still another embodiment of the substrate processing apparatus of the present invention.

FIG. 12 is a sectional view showing still another embodiment of the substrate processing apparatus of the present invention.

FIG. 13 is a sectional view showing still another embodiment of the substrate processing apparatus of the present invention.

FIG. 14 is a sectional view of a conventional substrate processing apparatus.

[Explanation of symbols]

 10 Substrate processing apparatus 12 Substrate 14 Rotary chuck as holding means 15 Motor as rotating means 16 Chemical discharging nozzles 46, 51, 54 as chemical discharging means Hot plate as temperature adjusting means 47 Infrared heater as temperature adjusting means

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/306 H01L 21/306 R

Claims (13)

[Claims] 1. A holding means for holding a substrate, a rotating means for rotating the holding means, a chemical liquid discharging means for discharging a chemical liquid having a different temperature from the substrate to the substrate, and a central part to a peripheral part of the substrate. And a reaction adjusting means for adjusting a reaction rate of the chemical based on a temperature relationship between the substrate and the chemical. 2. The method according to claim 1, wherein the chemical liquid discharging means discharges a chemical liquid having a higher temperature than the substrate to the substrate, and the reaction adjusting means is a reaction accelerating means for accelerating a reaction speed of the chemical liquid from a central portion to a peripheral portion of the substrate. The substrate processing apparatus according to claim 1, wherein: 3. A holding means for holding the substrate, a rotating means for rotating the holding means, and a chemical solution having a different temperature from the substrate is discharged to the substrate, and the central part and the peripheral part of the substrate, A substrate processing apparatus comprising: a chemical discharge nozzle for adjusting a discharge amount of a chemical based on a temperature relationship between a substrate and the chemical. 4. A holding means for holding the substrate, a rotating means for rotating the holding means, a chemical solution having a different temperature from the substrate is discharged onto the substrate, and A substrate processing apparatus comprising: a chemical discharge nozzle for adjusting a discharge concentration of a chemical based on a temperature relationship between a substrate and the chemical. 5. A holding means for holding a substrate, a rotating means for rotating the holding means, a chemical solution having a temperature different from that of the substrate is discharged onto the substrate, and the substrate is discharged from a central portion to a peripheral portion of the substrate. A substrate processing apparatus, comprising: a chemical discharge nozzle for adjusting a discharge component of a chemical based on a temperature relationship between a substrate and the chemical. 6. A holding means for holding a substrate, a rotating means for rotating the holding means, a chemical solution having a temperature different from that of the substrate is discharged to the substrate, and the liquid crystal is discharged from a central portion to a peripheral portion of the substrate. A substrate processing apparatus, comprising: a chemical solution discharge nozzle that adjusts a chemical solution discharge temperature based on a temperature relationship between a substrate and the chemical solution. 7. A holding means for holding the substrate, a rotating means for rotating the holding means, a chemical solution having a temperature different from that of the substrate is discharged to the substrate, and the liquid crystal is discharged from a central portion to a peripheral portion of the substrate. A substrate processing apparatus, comprising: a chemical solution discharge nozzle that adjusts a chemical solution discharge time based on a temperature relationship between a substrate and the chemical solution. 8. The substrate processing apparatus according to claim 7, wherein the chemical liquid discharge nozzle discharges the chemical liquid while moving. 9. The chemical liquid discharge nozzle discharges a liquid chemical having a higher temperature than the substrate to the substrate, and promotes a reaction at a peripheral portion of the substrate rather than at a central portion of the substrate. The substrate processing apparatus according to any one of the preceding claims. 10. A holding means for holding a substrate, a rotating means for rotating the holding means, a chemical solution discharging nozzle for discharging a chemical solution having a different temperature from the substrate to the substrate, and a central part to a peripheral part of the substrate. And a temperature adjusting means for adjusting a temperature of the substrate based on a temperature relationship between the substrate and the chemical solution. 11. A chemical solution discharge nozzle for discharging a chemical solution having a higher temperature than the substrate to the substrate, and the temperature adjusting means is a heating means for heating a peripheral portion of the substrate to a higher temperature than a central portion of the substrate. The substrate processing apparatus according to claim 10. 12. The substrate processing apparatus according to claim 11, wherein the heating unit heats the substrate via the holding unit. 13. The substrate processing apparatus according to claim 1, further comprising a pure water discharge unit for replacing the substrate with pure water.