JP2000196049A - Solid-state image pickup device and color filter and liquid crystal display element and liquid crystal projector and manufacture of then - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state image pickup device, in which constitution and a manufacturing process is simplified, and optical characteristics desired for each use are improved, and a color filter, and a liquid crystal display element, and a liquid crystal projector, and a method for manufacturing them. SOLUTION: This solid-state image pickup device is provided with a microlens color filter layer 18, in which plural semi-spherical color layers (microlens 17) having converging characteristics are arranged. This manufacturing method of the microlens 17 is by a photolithographic method and an electrodeposition method. This liquid crystal display element has a similar microlens color filter layer 18, and a color filter, and a liquid crystal projector having the liquid crystal display element.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device, a color filter, a liquid crystal display device, a liquid crystal projector, and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, as a method of colorizing a solid-state imaging device, a solid-state imaging device has been replaced with a filter bonding system in which a color filter formed by arranging a plurality of dye layers on a glass plate is directly bonded to the solid-state imaging device. The on-chip color filter system in which a color filter layer is formed directly on a semiconductor substrate on which is formed has become mainstream.

In recent years, as the size of a solid-state image pickup device has been reduced, the area of a light receiving section of an image pickup device has been reduced, and there has been a problem of a decrease in light sensitivity. In order to solve this problem, a solid-state imaging device having a microlens mounted at a position corresponding to each light receiving unit is known.

For example, Japanese Patent Application Laid-Open No. 7-313110 discloses a solid-state imaging device in which a color filter layer in the form of a dyed layer is formed on a semiconductor substrate on which a solid-state imaging device is formed by using an acrylic resin, and a microlens is placed thereon. A method for manufacturing a device is disclosed. In Japanese Patent Application Laid-Open No. 8-316448, two layers of microlenses are stacked on a solid-state image sensor on which an on-chip color filter is formed to improve light-collecting characteristics.

[0005]

However, the conventional solid-state imaging device and the method of manufacturing the same have the following problems.

[0006] As described above, a solid-state imaging device having a configuration in which a color filter layer and a microlens are mounted on a semiconductor substrate requires many manufacturing steps and increases costs.

Further, in order to enhance the light-collecting characteristics of the microlens, it is necessary to increase the effective aperture ratio, but it is difficult with conventional techniques. That is, in order to efficiently guide the oblique light component to the light receiving unit, it is necessary to shorten the distance from the microlens to the light receiving unit (hereinafter, referred to as “distance between the lens and the light receiving unit”). However, in the conventional technique, aluminum is used for the light-shielding film and is commonly used for the surrounding wiring.
Since a film thickness close to m is required and the step of the opening is further increased, it is necessary to provide a sufficient flattening film so that the color filter layer and the microlens can be formed without variation. For the above reasons, it is difficult to shorten the distance between the lens and the light receiving unit in the conventional technology.

Further, in order to improve the light sensitivity of the solid-state imaging device, it is desirable to reduce the space between adjacent microlenses as much as possible and to increase the light receiving area of the microlenses. However, in the related art, when a microlens is formed, a patterned lens resist (hereinafter, referred to as a “lens pattern”) is heated and melted.
If the space between the adjacent lens patterns is too small, the lens patterns protruding due to the heating and melting come into contact with each other and flow out, so that the shape of the microlens is broken and the surface area of the hemispherical portion is reduced. This allows
The amount of light collected at the photodiode part is reduced, and the sensitivity is reduced.

Further, in fields other than the solid-state image pickup device, for example, a color filter for a display device, and a liquid crystal display element used for a liquid crystal projector, for example, there is a similar problem in improving the optical characteristics required for each application. Exists.

SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art, and has a simplified configuration and manufacturing process, and has improved optical characteristics required for each application, a solid-state imaging device, a color filter, and a liquid crystal. It is an object to provide a display element, a liquid crystal projector, and a manufacturing method thereof.

[0011]

According to the present invention, there is provided a solid-state image pickup device having a color filter layer comprising a plurality of dye layers arranged on a semiconductor substrate on which a solid-state image pickup device is formed.
A solid-state imaging device, wherein the plurality of dye layers have light-collecting characteristics.

Further, the present invention is a method for manufacturing the solid-state imaging device, comprising the steps of: forming a transparent conductive film on a semiconductor substrate on which a solid-state imaging device is formed; Forming a resist pattern by a photolithographic method, and forming a plurality of dye layers having light-condensing properties by an electrodeposition method.

Further, the present invention is a color filter comprising a plurality of dye layers arranged on a substrate, wherein the plurality of dye layers have light collecting characteristics.

Further, the present invention is a method for producing the above color filter, comprising the steps of: forming a transparent conductive film on a substrate; and forming a light-collecting property on the transparent conductive film by an electrodeposition method. And forming a plurality of dye layers having the same.

Further, the present invention is a liquid crystal display device comprising the above-mentioned color filter provided on a liquid crystal display panel.

Further, the present invention provides a liquid crystal display device having a color filter layer in which a plurality of dye layers are disposed on a liquid crystal display panel, wherein the plurality of dye layers have light-collecting characteristics. It is a liquid crystal display element.

Further, the present invention relates to a method for manufacturing the above-mentioned liquid crystal display element, comprising the steps of forming a transparent conductive film on a liquid crystal display panel, and forming a resist on the transparent conductive film by photolithography. Forming a pattern and forming a plurality of dye layers having light-collecting properties by an electrodeposition method.

The present invention further provides at least the above liquid crystal display device, a light source for supplying light to the liquid crystal display device, and a projection lens for projecting light emitted from the liquid crystal display device. It is.

In the present invention, since each dye layer of the color filter layer itself has a light-collecting property, the optical properties required for each application can be improved satisfactorily. Further, if a dye layer having a light-collecting property is formed by a photolithographic method and an electrodeposition method, the manufacturing process can be further simplified,
This leads to lower costs.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below.

FIGS. 1A to 1F are schematic cross-sectional views sequentially showing each step of an embodiment of the method for manufacturing a solid-state imaging device according to the present invention.

First, as shown in FIG. 1A, a photodiode portion 12 as a light receiving portion for converting incident light into electric charges is formed on a surface portion of a semiconductor substrate 11, and the surface is further formed thereon. A transparent conductive thin film 13 also serving as a flattening layer for flattening is formed.

Next, as shown in FIG. 1B, a resist film 14 is formed on the transparent conductive thin film 13. Then
As shown in FIG. 1C, a photomask 15 having a desired pattern is arranged on the resist film 14, and exposure is performed from above. Here, examples of the pattern of the photomask 15 include a mosaic pattern having a pitch corresponding to the position of the photodiode unit 12. In this case, the alignment of the photomask 15 may be performed by adjusting the pitch and the position of the photodiode unit 12.

Next, as shown in FIG.
After a development process, a resist pattern 16 corresponding to the pattern of the photomask 15 is formed. For example, when a photomask 15 having a mosaic pattern is used, a mosaic resist pattern 16 is obtained accordingly, and an opening (cell) in which the transparent conductive thin film 13 is exposed in a mosaic pattern is formed.

Next, as shown in FIG. 1E, a large number of hemispherical microlenses 17 having a light-collecting property are formed as a dye layer of the first color (for example, red) by an electrodeposition method. For example, the substrate after the formation of the resist pattern 16 is immersed in an electrodeposition bath of an anion-type electrodeposition resin composition for red, and a DC voltage is applied with the transparent conductive thin film 13 in the exposed opening as a positive electrode. Since the current is concentrated on the central portion of the portion, the central portion is thickly electrodeposited, and a large number of red hemispherical microlenses 17 are formed favorably and easily.

Hereinafter, the microlenses of the second color and the third color (for example, green and blue) are also shown in FIGS.
By repeating the process shown in (e), a large number is similarly formed. In addition, since the first color microlens 17 is made of an electrodeposition resin, in the second color electrodeposition step, it has the same function as the resist, and there is no need to form a resist film again. The same applies to the microlenses of the first color and the second color in the electrodeposition process of the third color.

After that, if the remaining resist is removed,
As shown in FIG. 1F, a plurality of hemispherical microlenses, which are dye layers of three colors of red, green, and blue, are arranged, and a color filter layer (hereinafter, referred to as “micro”) that selectively transmits wavelengths. A solid-state imaging device including the lens-type color filter layer 18) is obtained.

FIGS. 2A to 2E are schematic cross-sectional views sequentially showing each step of an embodiment of the color filter manufacturing method of the present invention.

First, as shown in FIG. 2A, a transparent conductive film 22 is formed on a glass substrate 21, and a resist film 23 is formed thereon. Next, as shown in FIG.
A photomask 24 is arranged on the resist film 23 and is exposed from above. Here, as the pattern of the photomask 24, a mosaic pattern or the like can be mentioned as in the above example.

Next, as shown in FIG.
After the development process, a resist pattern 25 corresponding to the pattern of the photomask 24 is formed, and as shown in FIG. 2D, a hemispherical microlens 26 of the first color is formed.
Further, by repeating the process, hemispherical microlenses of a plurality of colors for coloring the transmitted light into the corresponding colors, that is, the second and third colors, are formed, and the remaining resist is removed. The micro lens type color filter 27 shown in FIG. These steps may be performed in the same manner as in the method shown in FIGS.

The microlens type color filter thus obtained can be used, for example, for a liquid crystal display element attached to electronic equipment such as a personal computer or an LCD for a liquid crystal projector.
It can be suitably used as a color filter for a display device.
When this color filter is used for a display device, specifically, it may be provided on the display device by bonding or the like. In the present invention, a separately manufactured color filter in a filter bonding method or the like is referred to as a “color filter”, and a layer having a function as a color filter in a device or an element in an on-chip color filter method is referred to as a “color filter layer” ”And are expressed separately.

FIG. 3 is a schematic sectional view showing one embodiment of the liquid crystal display device of the present invention. The liquid crystal display element shown in this figure is a glass substrate 3 having a transparent electrode 34 formed on the entire inner surface.
1b is opposed to a glass substrate 31a on which pixels 32 composed of transparent electrodes are arranged, and a liquid crystal display panel 30 filled with liquid crystal 33 is provided between the glass substrate 31a and a microlens type color filter 35 having a configuration as shown in FIG. Is adhered.

In the liquid crystal display element shown in FIG. 3, red (R), green (G), and blue (B) hemispherical microlenses are positioned so as to correspond to one pixel 32 for each one. I have.

FIGS. 4A to 4F are schematic cross-sectional views sequentially showing the steps of one embodiment of the method for manufacturing a liquid crystal display element of the present invention. This embodiment differs from the liquid crystal display device shown in FIG. 3 in that a color fill multilayer is formed directly on the liquid crystal display device. Each part 40-44, 4 in FIG.
Reference numeral 9 corresponds to each of the portions 30 to 35 in FIG.

First, as shown in FIG. 4A, a glass substrate 41b having a transparent electrode 44 formed on the entire inner surface thereof and a glass substrate 41a having pixels 42 formed of the transparent electrode are opposed to each other. A liquid crystal display panel 40 filled with liquid crystal 43 is prepared.

Next, as shown in FIG. 4B, a resist film 45 is formed on the glass substrate 41b. Next, as shown in FIG. 4C, a photomask 46 is disposed on the resist film 45, and exposure is performed from above. Here, examples of the pattern of the photomask 46 include a mosaic pattern having a pitch corresponding to the position of the pixel 42. In this case, the alignment of the photomask 46 may be performed by aligning the pitch with the position of the pixel 42.

Next, as shown in FIG.
After the development process, a resist pattern 47 corresponding to the pattern of the photomask 46 is formed, and as shown in FIG. 4E, a hemispherical microsphere of the first color is formed on the conductive glass substrate 41b having an opening. By forming the lens 49 and repeating the process, hemispherical micro lenses of the second and third colors are formed, the remaining resist is removed, and a micro lens type color as shown in FIG. A filter layer 49 is obtained. Each of those steps is shown in FIG.
What is necessary is just to carry out similarly to the method shown by (f).

FIG. 5 is a schematic sectional view showing an embodiment of the liquid crystal projector of the present invention. The liquid crystal projector shown in FIG.
The liquid crystal display panel shown in FIG.
A light source 51 for irradiating 3 from behind, a liquid crystal display panel 53
Lens systems 54 and 55 for projecting the image of
It is composed of

The light emitted from the light source 51 as a parallel light beam passes through a polarizer 52a, is converted into linearly polarized light, and then, by a liquid crystal display panel 53, red light (R) and green light (G).
・ Being separated into blue light (B) and condensed, then
The light passes through the polarizer 52b disposed so as to be in a direction perpendicular to the polarizer 52a.

In each of the embodiments described above, the electrodeposition method for forming a microlens having a light-collecting property includes:
A desired coloring material such as a pigment can be added to various types of resin-containing electrodeposition paints known to be capable of forming an electrodeposition coating film on a substrate by electrophoresis.

When the base material is a non-metal such as a resin, the electrodeposition coating may be performed after metal plating by chemical plating or after an appropriate surface conductivity treatment.

Examples of the resin used for the electrodeposition paint include acrylic / melamine-based, acrylic-based, epoxy-based, urethane-based and alkyd-based anionic or cationic resins.

As the anionic resin, for example, a resin such as an acrylic resin, a maleic resin, a polyester resin, an epoxy resin, a polybutadiene resin, a carboxyl group,
Resins into which an anionic group such as a sulfone group is introduced. These resins are solubilized or dispersed in water with a basic substance such as triethylamine, diethylamine, dimethylethanol, or ammonia in the electrodeposition paint.

Examples of the cationic resin include resins obtained by introducing a cationic group such as an amino group, an ammonium base, or an imino group into a resin such as an epoxy resin, an acrylic resin, a urethane resin, a polyamide resin, or a polybutadiene resin. Can be These resins are used in electrodeposition paints.
It is solubilized or dispersed in water with acidic substances such as formic acid, acetic acid, propionic acid, and lactic acid.

Examples of the coloring material to be added to the resin-containing electrodeposition paint include various pigments which are conventionally known to be usable for color filters. For good colorization, color group consisting of yellow, cyan and magenta,
It is preferable to use at least one color group selected from the group consisting of red, blue, and green.

In the electrodeposition method, when an anionic resin is used, the substrate may be used as an anode, and when a cationic resin is used, the substrate may be used as a cathode and electricity may be supplied. The voltage is 3
The voltage application time is preferably 5 V or more and 20 seconds or less.

In this energization process, the anionic resin moves to the surface of the anode as a base material, reacts with the acid (H ⁺ ) generated near the anode by electrolysis of water, and is deposited as an electrodeposition coating film. . In addition, the cationic resin moves to the surface of the cathode serving as a mask base material, reacts with a base (OH ⁻ ) generated near the cathode by electrolysis of water, and deposits as an electrodeposition coating film. Next, the substrate is preferably taken out of the electrodeposition tank, washed with water, and then drained.

The electrodeposition coating film thus formed is
Further, it is preferable to perform a curing treatment by heating or light irradiation to improve weather resistance and chemical resistance. In the case of an anionic resin, for example, a hydroxyl group or a methylolated amide group introduced into the anionic resin is reacted with an amino resin such as a melamine resin or a benzoguanamine resin to cure the anionic resin. At this time, the amino resin acts as a crosslinking agent. There is also a method of curing by oxidative polymerization using a double bond of an anionic resin.
In the case of cationic polymerization, for example, a curing method of reacting an isocyanate compound with a hydroxyl group of a cationic resin or an amino group introduced for cationization, a curing method by oxidative polymerization, a curing method by transesterification, and the like. There is.

In the present invention, "having light-collecting characteristics" means having a convex lens-like optical characteristic capable of collecting light suitable for each application. More specifically, in a solid-state imaging device, it means that light can be collected so that the light sensitivity of a light receiving unit can be improved to a required degree, and in a color filter for a display device, it is suitable for the display device. It means that light can be collected, and in a liquid crystal display element and a liquid crystal projector, it means that light can be collected so that light efficiency for pixels can be improved to a required level. Although the optimum value differs depending on the application, in particular, the focal length is 5 to 50.
It preferably has optical characteristics as a convex lens of μm.

In order to provide such light-collecting characteristics, it is preferable to form the surface of the dye layer in a light-collecting lens shape (convex lens shape or the like), and particularly to make the surface of the dye layer hemispherical as shown in FIGS. Is more preferable. Here, the hemisphere means a shape obtained by cutting a sphere in a plane, and is not limited to a 球状 sphere, and includes a ３ sphere, a ５ sphere, and the like. Specifically, a shape similar to that of a conventional microlens can be suitably used. Further, the shape of the microlens array is also preferable.

On the other hand, in the prior art, a color filter having a dye layer having a light-collecting property is not used. For example, JP-A-61-272720 discloses that
A color filter having each of the dye layers 61, 62, 63 having a shape as shown in FIG. 6 is described. Each dye layer 61,
Although the shoulder portions 62 and 63 have slightly gentle shoulders, most of the light incident portions are flat surfaces, so that it is apparent that they do not have light-collecting characteristics.

When the dye layer is formed in a hemispherical shape as shown in FIGS. 1 to 5, the size thereof is not particularly limited, and may be appropriately determined so as to obtain desired light-collecting characteristics. However, when a sphere having a diameter of 3 to 20 μm is cut so that the cut surface becomes a plane, the maximum value (height) of the distance between the cut surface and the surface of the sphere is:
A shape (1/2) that is 1/2 to 1/10 of the diameter of the sphere
(2 spherical to 1/10 spherical).

When the microlens is formed by the electrodeposition method, the diameter of the opening (cell) of the resist pattern is
The outer diameter of this hemisphere is determined. Therefore, the diameter or the length of the long side of the cell is preferably about 3 to 20 μm.
Further, the diameter of the cell or the length of the long side is preferably about twice the thickness of the resist film.

Particularly preferable size conditions are as follows: When the cell area of the resist pattern is S μm ² , the thickness of the resist pattern is d μm, and the maximum height of the dye layer is h μm, d =
xS (x = 0.05 to 0.5), h = yd (y = 0.1 to 0.5)
1.0).

[0055]

The present invention will be described in more detail with reference to the following examples.

<Example 1> A solid-state imaging device was manufactured as follows in accordance with the steps shown in FIGS. 1 (a) to 1 (f).

First, as shown in FIG. 1A, a photodiode portion 12 is formed on a surface portion of a semiconductor substrate 11, and a transparent conductive thin film 13 is formed thereon as an ITO (indium tin oxide) having a thickness of about 100 nm. ) A film was formed by a sputtering method or an electron beam method.

Then, as shown in FIG. 1 (b), a special positive resist solution (Nippon Paint Co., Ltd., trade name “Excelid PR-146”) was applied on the transparent conductive thin film 13 by a spin coater. The resist film 14 was uniformly applied so as to have a thickness of 0.0 μm and dried to form a resist film 14.

Next, as shown in FIG. 1C, a photomask 15 having a size of 10 μm and having a mosaic pattern is arranged on the resist film 14 at a pitch corresponding to the position of the photodiode section 12. And exposed from above with a high pressure mercury lamp.

Then, as shown in FIG. 1D, after exposure, the film is further heated at 100 ° C. for 3 minutes, and is developed with an alkali developing solution to form a mosaic resist pattern 16 corresponding to the photomask 15. Formed.

Next, as shown in FIG. 1E, a red hemispherical microlens 17 was formed as follows by an electrodeposition method. That is, 750 g of an acrylic resin (trade name “Aron S-4030” manufactured by Toa Gosei Chemical Co., Ltd.) and a melamine resin (trade name “Sumimar M-66B” manufactured by Sumitomo Chemical Co., Ltd.) )) 2
50 g, triethylamine 62 g, and an azo metal salt red pigment (trade name “Pigment Red 4B” manufactured by Sanyo Dyeing Co., Ltd.)
S ") was immersed in an electrodeposition bath of an anionic electrodeposition resin composition for red consisting of 500 g, and a DC voltage of 35 V was applied for 15 seconds using the transparent conductive thin film 13 as a positive electrode. After that, it is washed with water and heat-treated to obtain a red hemisphere (maximum height 5.0μ).
The micro lens 17 of m) was formed.

In this embodiment, the cell area of the resist pattern is S μm ² , the thickness of the resist film of the resist pattern is d μm, and the maximum height of the dye layer in the cell is h μm.
When d = xS and h = yd, the x and y values are x = 0.
05, y = 1.0.

Thereafter, for the other pigments (green and blue), the steps shown in FIGS.
A green or blue colored microlens was formed. As a green pigment, "SAX" manufactured by Sanyo Dyeing Co., Ltd. was used, and as a blue pigment, "SR-150C" manufactured by Sanyo Dyeing Co., Ltd. was used.

Thereafter, in order to remove the remaining positive resist, the entire surface was irradiated with ultraviolet rays and developed and peeled off with an alkali peeling solution to obtain a microlens type color filter 27 having light-collecting characteristics (focal length: 10 μm). .

Example 2 According to the steps shown in FIGS. 2A to 2E, a color filter was produced as follows.

First, as shown in FIG. 2A, a transparent conductive film 22 was formed on a glass substrate 21 in the same manner as in Example 1, and a resist film 23 was formed thereon similarly.

Next, as shown in FIGS. 2B to 2D, a photomask 24 is arranged, a resist pattern 25 is formed through exposure, heating, and development, and a red hemispherical shape is formed by electrodeposition. By forming the microlens 26 and repeating each step, a microlens colored green or blue is formed, and the remaining resist is removed.
A microlens type color filter 27 having the light collecting characteristics (focal length 10 μm) as shown in FIG. All of these steps were performed under the same conditions as in Example 1.

Example 3 According to the steps shown in FIGS. 4A to 4F, a liquid crystal display device was manufactured as follows.

First, a liquid crystal display panel 40 having a configuration as shown in FIG. 4A was prepared. Next, as shown in FIG. 4B, a resist film 45 was formed on the glass substrate 41b in the same manner as in Example 1. Next, as shown in FIG. 4C, a photomask 46 was arranged on the resist film 45 at a pitch corresponding to the position of the pixel 42, and exposure was performed in the same manner as in Example 1.

Next, as shown in FIGS. 4D to 4E, a resist pattern 47 is formed through heating and development, and a red hemispherical microlens 49 is formed by an electrodeposition method. By repeating the process, a microlens colored green or blue is formed, the remaining resist is removed, and a microlens type color filter layer having a light-collecting characteristic (focal length 10 μm) as shown in FIG. 49 was obtained. All of these steps were performed under the same conditions as in Example 1.

In the first to third embodiments described above, a color filter composed of red, green and blue color groups is formed. However, the present invention is not limited to this. For example, a color filter composed of cyan, magenta and yellow is formed. A filter may be formed.

Further, in the first to third embodiments, the size of the cell is 10 μm. However, it is preferable that the cell size is set to be about twice the thickness of the resist film, and the voltage and the time for applying the voltage are adjusted. Thus, a microlens array can be formed.

[0073]

According to the solid-state imaging device and the like of the present invention, since each dye layer itself has a light-collecting property, the light-collecting property is smaller than when a microlens is separately provided on the color filter layer. The distance between the light unit and the light receiving unit can be reduced, and high sensitivity can be obtained by concentrating the incident light on the light receiving unit. In particular, it is possible to realize a solid-state imaging device or the like that suppresses a decrease in the light collection rate of oblique light incidence and has high sensitivity and excellent image characteristics.

Further, since there is no need to separately provide a microlens, the manufacturing process can be simplified. Further, since the number of interfaces can be reduced, light transmittance is improved.

In the method of manufacturing a solid-state imaging device according to the present invention, the dye layer is formed by the electrodeposition method.
Once formed, the dye layer coexists with the electrodeposited polymer and is electrically insulated.Thus, a single application of a photo-soluble resist allows the formation of three primary color dye layers, and an insulating layer is required between the dye layers. It is possible to form a lens array without any defects. As a result, the space between the lenses is reduced, and light can be collected from a wider area in the unit cell, the effective aperture ratio is increased, and the sensitivity is improved.

Further, the color filter of the present invention and the method of manufacturing the same have the same effects as described above, and do not require a black matrix, so that a color filter having no defect can be obtained.

Further, in the liquid crystal display device and the method of manufacturing the same according to the present invention, the same effects as described above can be obtained, and light can be efficiently collected in the pixels.

Further, in the liquid crystal projector of the present invention, the same effects as described above are obtained, the light use efficiency is improved, the display screen is bright, and a high quality display image is obtained.

[Brief description of the drawings]

FIGS. 1A to 1F are schematic sectional views sequentially showing each step of an embodiment of a method for manufacturing a solid-state imaging device according to the present invention.

FIGS. 2A to 2E are schematic cross-sectional views sequentially showing each step of an embodiment of the method for manufacturing a color filter of the present invention.

FIG. 3 is a schematic sectional view showing one embodiment of the liquid crystal display device of the present invention.

FIGS. 4A to 4F are schematic sectional views sequentially showing each step of an embodiment of the method for manufacturing a liquid crystal display element of the present invention.

FIG. 5 is a schematic sectional view showing one embodiment of the liquid crystal projector of the present invention.

FIG. 6 is a schematic sectional view showing an example of the structure of a conventional color filter.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Semiconductor substrate 12 Photodiode 13 Transparent conductive film (planarization film) 14 Resist film 15 Photomask 16 Resist pattern 17 Microlens 18 Microlens type color filter 21 Glass substrate 22 Transparent conductive film 23 Resist film 24 Photomask 25 Resist pattern 26 Micro lens 27 Micro lens type color filter 30 Liquid crystal display panel 31a, 31b Glass substrate 32 Pixel 33 Liquid crystal 34 Transparent electrode 35 Micro lens type color filter 40 Liquid crystal display panel 41a, 41b Glass substrate 42 Pixel 43 Liquid crystal 44 Transparent electrode 45 Resist film 46 photomask 47 resist pattern 48 microlens 49 microlens type color filter 51 light source 52a, 52b polarizer 53 liquid crystal element panel 54 55 projection lens 56 screen 61, 62, 63 dye layer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G09F 9/00 360 G09F 9/00 360N 5C058 H04N 5/335 H04N 5/335 V 5G435 5/74 5/74 BF term (for reference) 2H048 BA62 BB02 BB07 BB43 2H088 EA13 EA15 HA12 HA24 HA25 MA16 MA20 2H091 FA02Y FA26X FA29Y FB02 FB12 FC06 FC10 FD06 GA03 GA13 LA11 LA12 MA07 4M118 AA01 AA10 AB01 BA06 CA04 EA20 GC04 EA08 FA11 5C058 AA07 AA08 AB01 AB05 BA05 BA35 EA12 EA14 EA26 5G435 AA00 AA03 AA17 BB12 BB17 CC09 CC12 DD02 DD04 EE33 FF05 FF07 GG01 GG02 GG12 GG27 GG46 HH02 KK05 KK07 LL15

Claims (11)

[Claims] 1. A solid-state imaging device comprising a color filter layer comprising a plurality of dye layers arranged on a semiconductor substrate on which a solid-state image sensor is formed, wherein the plurality of dye layers have light-collecting characteristics. Characteristic solid-state imaging device. 2. The solid according to claim 1, wherein the plurality of dye layers are formed using at least one color group selected from a color group consisting of yellow, cyan and magenta and a color group consisting of red, blue and green. Imaging device. 3. A method for manufacturing a solid-state imaging device according to claim 1, wherein a step of forming a transparent conductive film on a semiconductor substrate on which the solid-state imaging element is formed, Forming a resist pattern on the conductive film by a photolithographic method, and forming a plurality of dye layers having light-collecting properties by an electrodeposition method. 4. A color filter comprising a plurality of dye layers arranged on a substrate, wherein the plurality of dye layers have light-collecting characteristics. 5. The color according to claim 4, wherein the plurality of dye layers are formed using at least one color group selected from a color group consisting of yellow, cyan and magenta and a color group consisting of red, blue and green. filter. 6. A method for manufacturing a color filter according to claim 4 or 5, wherein a step of forming a transparent conductive film on a substrate, and a step of collecting the transparent conductive film on the transparent conductive film by an electrodeposition method. Forming a plurality of dye layers having optical characteristics. 7. A liquid crystal display device comprising the color filter according to claim 4 provided on a liquid crystal display panel. 8. A liquid crystal display device having a color filter layer in which a plurality of dye layers are arranged on a liquid crystal display panel, wherein the plurality of dye layers have light-collecting characteristics. . 9. The liquid crystal according to claim 8, wherein the plurality of dye layers use at least one color group selected from a color group consisting of yellow, cyan and magenta and a color group consisting of red, blue and green. Display element. 10. A method for manufacturing a liquid crystal display element according to claim 8 or 9, wherein a step of forming a transparent conductive film on the liquid crystal display panel, and a step of forming a photolithographic film on the transparent conductive film. Forming a resist pattern by a method and forming a plurality of dye layers having light-collecting properties by an electrodeposition method. 11. A liquid crystal display device according to claim 8, further comprising: a light source for supplying light to the liquid crystal display device; and a projection lens for projecting light emitted from the liquid crystal display device. Liquid crystal projector.