JP2000193986A - Method and device for manufacturing liquid crystal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To actualize a manufacturing technology for a liquid crystal display which can join two opposite substrates with a small positional shift. SOLUTION: One of two substrates which differ in thermal expansion quantity when heated under the same conditions is coated with a seal material, the other substrate is put in close proximity and opposite to the first substrate, and the substrates are aligned; then the seal material is cured by irradiation with light (ultraviolet rays) from the side of the other substrate and thus the substrates are joined together to obtain, for example, a liquid crystal device. In this case, one (21) of the substrates constituting the liquid crystal device 20 is supported by a palette 11 for conveyance or a base board 31 as support means 11 and 31, the other substrate 22 is joined thereupon, and the substrates are irradiated with light (ultraviolet rays) while being cooled by cooling means 11a and 31a provided integrally with the support means.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique which is effective when applied to a manufacturing process of a device constituted by aligning two substrates and joining them with a resin or the like, and is used, for example, for manufacturing a liquid crystal device. To a suitable technology.

[0002]

2. Description of the Related Art In a manufacturing process of a liquid crystal device, two steps are taken.
A sealing material made of a thermosetting resin or an ultraviolet curing resin is applied along one peripheral portion of the two substrates, the substrates are positioned and joined together, and the sealing material is cured while maintaining a predetermined minute interval, Liquid crystal is sealed in the space to form a liquid crystal device.

More specifically, for example, in a manufacturing process of an active matrix type liquid crystal device, a matrix-like pixel electrode and a switching element (for example, TFT: Thin) for applying a voltage to the pixel electrode on one substrate are provided.
A liquid crystal device is provided by forming a color filter layer and a counter electrode corresponding to the pixel electrode on the counter substrate and joining them to each other to form a liquid crystal device. If the position shifts, the aperture ratio decreases and the display quality deteriorates. Therefore, the two substrates are precisely positioned, and the sealing material is cured and fixed by heating or irradiating ultraviolet rays while applying pressure to the substrates.

Incidentally, active matrix type liquid crystal devices include a transmission type and a reflection type. Reflection type liquid crystal devices include those in which a pixel electrode itself is used as a reflection electrode or a reflection electrode made of an aluminum layer or the like is provided separately from the pixel electrode, such as a light valve of a projection display device such as a projector, or a backlight. Has been put to practical use as a liquid crystal display device that does not require a liquid crystal display. Among them, in a reflection type liquid crystal device particularly used as a light valve, a silicon substrate is used as a substrate on a reflection electrode side, and a transparent glass substrate or the like is used as an incident side substrate opposed thereto.

[0005]

However, in the reflection type liquid crystal device composed of two substrates made of different materials as described above, since the substrates have different coefficients of thermal expansion, they are heated or irradiated with ultraviolet rays. When curing the sealing material,
Since the substrate with a larger thermal expansion coefficient has a larger expansion amount, the sealing material is hardened while the pixel electrode on the reflection side substrate and the black matrix for light shielding on the incident side substrate are displaced, and the aperture ratio is reduced. Cause you to Further, in the liquid crystal device in which the sealing material is cured and joined, the substrate having a larger thermal expansion coefficient shrinks more when the temperature is lowered, so that the entire substrate is curved. As a result, it has been found that there is a problem that the inclination of the reflective electrode varies depending on the position of the pixel, which causes a deterioration in display image quality.

In the case where a thermosetting sealing material is used, there is a problem that the substrate temperature rises and the characteristics are deteriorated, and the time required for the resin to harden is long. Methods using materials are increasing.

On the other hand, when an ultraviolet-curable sealing material is used, the substrate temperature can be lower than when a thermosetting sealing material is used, but in order to increase productivity and adhesive strength, the illuminance of ultraviolet light must be reduced. It is necessary to increase the temperature, and the temperature of the substrate rises to about 70 to 80 ° C., so that even when an ultraviolet-curable sealing material is used, the displacement due to the difference in the thermal expansion amount between the two substrates and the curvature of the panel cannot be ignored. There is a problem that it becomes to the extent.

[0008] The above-mentioned problem occurs not only in the reflection type liquid crystal device using the silicon substrate but also in a liquid crystal device constituting the device with two substrates having different thermal expansion coefficients facing each other. It is a problem.

An object of the present invention is to provide a technique for manufacturing a liquid crystal device capable of joining two opposing substrates with little displacement.

Another object of the present invention is to provide a manufacturing technique capable of obtaining a liquid crystal device having a high aperture ratio and good display quality when applied to a liquid crystal device for a display device.

[0011]

According to the present invention, in order to achieve the above object, a sealing material is applied to one of two substrates having different thermal expansion amounts when heated under the same conditions, A manufacturing apparatus for aligning substrates by bringing the other substrate into opposition and approaching, irradiating light (ultraviolet light) from one of the substrates to cure the sealing material, and joining the substrates to obtain a liquid crystal device, for example. Alternatively, in the manufacturing method, for example, one of the substrates constituting the liquid crystal device is supported by a supporting means such as a transfer pallet or a base substrate, and the other substrate is bonded thereon to form a cooling unit provided integrally with the supporting means. Light (ultraviolet light) is irradiated while cooling the substrate by means.

According to the above-mentioned means, since one of the substrates to be bonded is irradiated with the ultraviolet rays while being cooled by the cooling means provided on the transfer pallet or the base substrate as the supporting means, the thermal expansion of the substrate is suppressed. In this state, the sealing material is hardened, whereby high-precision bonding can be performed, and displacement between substrates and bending after bonding can be prevented.

The cooling means provided on the transport pallet or the base board may be a cooling fin or a passage through which cooling water can pass, a cooling water circulating device, or the like. Further, in the case of a transport pallet or a base substrate having cooling fins, it is desirable to provide a blowing means for sending cooling air from the side of the apparatus toward the transport pallet or the base substrate.

When one of the two substrates to be bonded is transparent and the other is opaque, for example, a glass substrate and a semiconductor substrate, the two substrates are placed on a transport pallet or a base substrate as the support means. The substrate is preferably an opaque substrate. This is because, since the transparent substrate is located on the upper side, a light irradiating means such as an ultraviolet lamp or the like is disposed above and ultraviolet light can be irradiated from above, so that the configuration of the apparatus is simplified.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows a schematic configuration of an example of an apparatus suitable for applying the present invention. In FIG. 1, reference numeral 11 denotes a transport pallet on which a liquid crystal panel 20 to be joined is placed;
2 is a transfer means for transferring the transfer pallet 11, 13
Reference numerals a, 13b, and 13c denote ultraviolet lamps such as a high-pressure mercury lamp disposed above the conveying path of the conveying pallet 11, and cooling means 14 disposed on the side of the conveying path and sends air toward the passing pallet. As a blower fan.

The liquid crystal panel 20 to be bonded is placed on the transport pallet 11 at a loading position 15 on the starting end side (left side in the figure) of the apparatus, and is transferred by the transfer means 12 while the ultraviolet lamps 13a, The sealing material is hardened by the irradiation of the ultraviolet rays from 13b and 13c, and is lowered from the transfer means 12 at the unloading position 16 on the terminal side (right side in the figure) of the apparatus. Instead of placing the liquid crystal panel 20 on the transport pallet 11 at the loading position 15, the transport pallet 11 on which the liquid crystal panel is placed by the loading device (not shown) is placed on the transfer means 12 at the loading position 15. You may do it.
As the sealing material, any material may be used as long as it is an ultraviolet curing resin such as an acrylic, epoxy, or acrylic epoxy resin.

The transfer means 12 may be continuously driven to irradiate ultraviolet rays while moving the transport pallet 11, or when the pallet 11 is transferred to just below the ultraviolet lamps 13a, 13b, 13c. You may make it stop. The method of temporarily stopping has the advantage that the overall length of the device can be reduced. On the other hand, the method of moving continuously has an advantage that the number of processed sheets per unit time is large and the efficiency is higher than the method of temporarily stopping.

FIG. 2 shows the details of the transport pallet 11. As shown in the figure, the transport pallet 11 of this embodiment is provided with cooling fins 11a on the lower surface and side surfaces. Instead of providing the cooling fins, the transport pallet 11 may be formed of a material having a large heat capacity, or an auxiliary panel having a large heat capacity may be joined under the pallet. Further, it is desirable that the transport pallet 11 is made of a material having good thermal conductivity. In FIG. 2, a silicon substrate 21 serving as a reflection-side substrate of a liquid crystal panel 20 is placed on a transport pallet 11 in a wafer state before cutting, and an incident-side counter substrate cut for each panel is placed thereon. The state in which a plurality of glass substrates 22 are bonded is shown. The sealing material may be applied to the silicon substrate 21 side, or may be applied to the glass substrate 22 on the opposite side.

In this embodiment, the transport pallet 1
1 is provided with cooling fins 11a, and a blower fan 14 as a cooling means is disposed on the side of the transport path, so that the ultraviolet rays from the ultraviolet lamps 13a, 13b, and 13c are applied to the transport pallet 11. Even when the liquid crystal panel is irradiated, the temperature rise of each substrate is suppressed. As a result, the curvature of the panel due to thermal expansion and the displacement of the pixel electrode on the reflection side substrate and the position of the light blocking black matrix on the incident side substrate in the active matrix type liquid crystal device are prevented.

More specifically, by applying the above-described embodiment, before application, ultraviolet light having an intensity of 70 to 200 mW / cm ² is used for a time of 20 seconds to 5 minutes (in the case of an integrated light amount of 2000 mW / cm ² ).
The irradiation can reduce the temperature of the substrate, which has been raised from 70 to 80 ° C., to about 35 ° C. (room temperature is about 25 ° C.). As a result, for example, a silicon substrate was used as the substrate on the pixel electrode side, and a non-alkali glass having a thermal expansion coefficient of 3.5 × 10 ⁻⁶ was used as the counter substrate, and the size of the liquid crystal panel was set to 20 mm and the thickness was set to 1.7 mm. In this case, the coefficient of thermal expansion of silicon is 2.6 × 10 ^−6.
Therefore, in the conventional bonding method without cooling, the temperature of the substrate rises by about 50 ° C., so that the center of the panel is deflected by 1 to 2 μm as compared with the peripheral part. It was found that the deflection of the portion could be suppressed to 0.3 μm or less.

In the above embodiment, the silicon substrate 21 serving as the reflection-side substrate is described as being mounted on the transfer pallet 11 in a wafer state before cutting. However, the silicon substrate 21 is also cut before the transfer pallet 11 is cut. It may be placed on the top, or both may be joined without cutting, and then cut.

FIG. 3 shows another embodiment of a substrate bonding apparatus for a liquid crystal device to which the present invention is applied. As shown in FIG. 3, in this apparatus, a base board 31 serving as a substrate mounting table is provided at the center of the apparatus, and an ultraviolet lamp 13 for irradiating ultraviolet rays is arranged above the base board 31.

In this embodiment, a cooling water passage 32 is formed so as to meander inside the base substrate 31, and the cooling water passage 3 is formed on the lower surface of the base substrate 31.
An inlet 33 communicating with one end of the cooling water passage 32 and an outlet 34 communicating with the other end of the cooling water passage 32 are provided. And
Although not shown in FIG. 3, a circulating device such as a pump for circulating cooling water is connected to the inlet 33 and the outlet 34.

In this embodiment as well, the substrate to be bonded is such that the silicon substrate 21 serving as the reflection-side substrate of the liquid crystal panel 20 is mounted on the base substrate 31 in a wafer state before cutting, and A plurality of glass substrates 22 serving as an incident-side counter substrate cut for each panel may be joined, or a plurality of silicon substrates 21 may be cut and arranged side by side on a base substrate 31. Alternatively, a glass substrate 22 serving as a counter substrate on each incident side may be bonded thereon. FIG. 3 shows an example in which the silicon substrate 21 is placed in a cut state.

Also in this embodiment, since the cooling water passage 31a is provided in the base board 31 and a cooling water circulation device is connected to the cooling water passage, the ultraviolet lamp 32 Irradiation of the liquid crystal panel on the base substrate 31 with ultraviolet rays from the substrate suppresses the temperature rise of each substrate. As a result, the curvature of the panel due to thermal expansion and the displacement of the pixel electrode on the reflection side substrate and the position of the light blocking black matrix on the incident side substrate in the active matrix type liquid crystal device are prevented.

In the substrate bonding apparatus shown in FIGS. 1 and 3, a lamp for irradiating ultraviolet rays is arranged above the transporting means 12 or the base substrate 31 so that the sealing material is cured by the ultraviolet rays. Is the transport pallet 11
Alternatively, the base plate 31 and the like may be made of a transparent material, and the ultraviolet lamp may be arranged below and the ultraviolet light may be irradiated from below.

The substrate bonded as described above is cut at the boundary of each liquid crystal device, and after the liquid crystal is sealed, the substrate is driven by, for example, TAB (Tape Automated Bonding). The drive circuit board on which the IC is mounted is connected via an ACF (Anisotropic Conductive Film). Also,
The driving IC may be directly mounted on the terminal electrode of each substrate and mounted by a COG (Chip On Glass) method. The liquid crystal display device includes a necessary power supply circuit, control circuit, light source, and the like.

FIG. 4 shows an example of a sectional configuration of a reflective electrode side substrate of a reflective liquid crystal panel which is particularly effective when the present invention is applied. FIG. 4 shows a cross section of one FET and one storage capacitor in one pixel portion among pixels arranged in a matrix. In FIG. 4, reference numeral 101 denotes a P-type semiconductor substrate such as single-crystal silicon (an N-type semiconductor substrate (N--) may be used);
Reference numeral 102 denotes a P-type well region formed on the surface of the semiconductor substrate 101, and reference numeral 103 denotes a field oxide film (so-called LOCO) for element isolation formed on the surface of the semiconductor substrate 101.
S). Although not particularly limited, the well region 102 is formed as a common well region of a pixel region in which pixels are arranged in a matrix, and elements forming peripheral circuits such as a sampling circuit, a shift register, and a timing control circuit are formed. Is formed separately from the well region of the portion. The field oxide film 103 is formed to a thickness of 5000 to 7000 angstroms by selective thermal oxidation.

In the field oxide film 103, six openings are formed for each pixel. Of the three openings, the center inside the three openings is formed of polysilicon or metal silicide via a gate oxide film (insulating film) 104b. A gate electrode 104a is formed. Source and drain regions 105a and 105b are formed on the substrate surface on both sides of the gate electrode 104a. The source and drain regions 105a and 105b are formed of a high impurity concentration N-type impurity introduction layer (hereinafter referred to as a doping layer). It is configured. The gate electrode 104a extends in the scanning line direction (pixel row direction) to form a scanning line.

A P-type doping region 108 is formed on the substrate surface inside the other opening formed in the field oxide film 103, and an insulating film 109b is formed on the surface of the P-type doping region 108. Electrode 10 made of polysilicon or metal silicide through
A storage capacitor 9a is formed between the electrode 109a and the P-type doping region. The electrode 109a is formed in the same step as the polysilicon or metal silicide layer serving as the gate electrode 104a of the MOSFET, and the insulating film 109b under the electrode 109a is formed in the same step as the insulating film serving as the gate insulating film 104b. be able to.

The insulating films 104b and 109b are formed on the surface of the semiconductor substrate inside the opening by thermal oxidation by 400-80.
It is formed to a thickness such as 0 Å. The electrodes 104a and 109a are made of a polysilicon layer of 1000 to 1000
The structure is such that it is formed to a thickness of 2000 Å and a silicide layer of a high melting point metal such as Mo or W is formed thereon to a thickness of 1000 to 3000 Å. Source / drain region 105
A and 105b are formed in a self-aligned manner by ion-implanting N-type impurities into the surface of the substrate on both sides using the gate electrode 104a as a mask.

The first interlayer insulating film 10 extends from the electrodes 104 a and 109 a to the field oxide film 103.
A source electrode 107a made of a metal layer mainly composed of aluminum and connecting the source region 105a of the MOSFET and the electrode 109a of the storage capacitor, and a drain region 1 of the MOSFET are formed on the insulating film 106.
A drain electrode 107b that connects the pixel electrode 05b and the pixel electrode 114 serving as a reflective electrode is provided, and each is connected by a contact hole formed in the insulating film 106.

A second interlayer insulating film 111 is formed from the source electrode 107a and the drain electrode 107b to the interlayer insulating film 106.
Above is a second metal layer 11 mainly composed of aluminum.
2 is formed. The second metal layer 112 constituting the light-shielding film should be formed of the same metal layer as the metal layer constituting the connection wiring between elements in a peripheral circuit such as a drive circuit formed around the pixel region. Can be. Therefore, there is no need to add a step for forming only the light shielding film (112), and the process is simplified. In the light-shielding film (112), an opening 112a is formed at a position corresponding to the drain electrode 107b so as to penetrate a columnar connection plug 115 for electrically connecting to the pixel electrode 114. Is formed so as to cover the entire pixel region. This makes it possible to almost completely block light incident from above the substrate, thereby preventing light from passing through the channel region and the well region of the pixel switching MOSFET and causing leakage current to flow.

In this embodiment, the light shielding film (11
2) A third interlayer insulating film 113 is formed on
On the interlayer insulating film 113, a relatively flat pixel electrode 114 having a rectangular shape corresponding to substantially one pixel is formed.
The opening 11 provided in the light shielding film (112)
A contact hole 116 penetrating through the third interlayer insulating film 113 and the second interlayer insulating film 111 is provided so as to be located inside corresponding to 2a. In the contact hole 116, the drain electrode 107b is formed. A columnar connection plug 115 made of a refractory metal such as tungsten for electrically connecting the pixel electrode 114 is filled. Further, a passivation film 117 is entirely formed on the pixel electrode 114.

FIG. 5 shows a sectional structure of a reflection type liquid crystal panel 300 to which the liquid crystal panel substrate is applied. In FIG.
Reference numeral 131 denotes a reflection-side liquid crystal panel substrate configured as in the above-described embodiment. On the upper surface side of the liquid crystal panel substrate 131, a transparent conductive film (ITO) to which an LC common potential is applied is provided.
Glass substrate 1 on the incident side having a counter electrode 133 made of
35 are disposed at appropriate intervals, and the surroundings thereof are sealing materials 1.
The well-known TN (Twisted Nemati)
c) Type liquid crystal or SH (Super Homeotropic) type liquid crystal 1 in which liquid crystal molecules are almost vertically aligned in the absence of voltage
The liquid crystal panel 130 is configured by being filled with 37 or the like. The pad region 126 for inputting a signal from the outside or supplying a power supply voltage is provided in the sealing material 13.
The position where the sealing material is provided is set so as to be outside of the reference numeral 6.

Reference numeral 125 denotes a light-shielding film formed so as to cover the peripheral circuit. The light-shielding film 125 is configured to face the common electrode 133 on the counter substrate 135 with the liquid crystal 137 therebetween. When the LC common potential is applied to the light shielding film 125, the LC common potential is originally applied to the common electrode 133 of the opposing substrate, so that no DC voltage is applied to the liquid crystal interposed therebetween. Therefore, in the case of the TN type liquid crystal, the liquid crystal molecules are always kept twisted by about 90 °, and in the case of the SH type liquid crystal, the liquid crystal molecules are always kept in a vertically aligned state.

FIG. 6 is an example of an electronic apparatus using a liquid crystal panel, and is a schematic plan view of a main part of a projector (projection display device) using the reflective liquid crystal panel of the above embodiment as a light valve. It is a block diagram.

The projector of this embodiment has a light source section 410 and an integrator lens 4 arranged along the system optical axis L.
20, a polarization illuminating device schematically including a polarization conversion element 430, a polarizing beam splitter 200 for reflecting an S-polarized light beam emitted from the polarized light illuminating device by an S-polarized light beam reflecting surface 201, and an S-polarized light reflecting surface of the polarized beam splitter 200 Of the light reflected from 201, dichroic mirror 412 separating the blue light (B) component, reflective liquid crystal light valve 300B modulating the separated blue light (B) with blue light, and blue light separated. A dichroic mirror 413 that reflects and separates the red light (R) component of the subsequent light flux, a reflective liquid crystal light valve 300R that modulates the separated red light (R), and a dichroic mirror 413.
Reflective liquid crystal light valve 300G that modulates the remaining green light (G) transmitted through the three liquid crystal light valves 3
The light modulated by 00R, 300G, and 300B is combined by dichroic mirrors 412, 413, and polarizing beam splitter 200, and is configured by a projection optical system 500 including a projection lens that projects the combined light onto screen 600. The three reflective liquid crystal light valves 300
The above-described liquid crystal panels are used for R, 300G, and 300B, respectively.

The randomly polarized light beam emitted from the light source unit 410 is split into a plurality of intermediate light beams by an integrator lens 420, and the polarization direction is substantially changed by a polarization conversion element 430 having a second integrator lens on the light incident side. After being converted into one kind of polarized light beam (S-polarized light beam), the light reaches the polarization beam splitter 200. The S-polarized light beam emitted from the polarization conversion element 430 is reflected by the S-polarized light beam reflection surface 2 of the polarizing beam splitter 200.
01, the blue light (B) of the reflected light is reflected by the blue light reflecting layer of the dichroic mirror 412 and modulated by the reflective liquid crystal light valve 300B. Also, dichroic mirror 411
Among the light beams transmitted through the blue light reflecting layer, the light beam of red light (R) is reflected by the red light reflecting layer of the dichroic mirror 413 and is modulated by the reflective liquid crystal light valve 300R.

On the other hand, the light flux of the green light (G) transmitted through the red light reflecting layer of the dichroic mirror 413 is modulated by the reflection type liquid crystal light valve 300G. Thus, each of the reflective liquid crystal light valves 300R, 300R
The light is modulated by 0G and 300B, combined by the dichroic mirrors 412, 413, and the polarization beam splitter 200, and projected onto the screen 600. The reflection type liquid crystal panel which becomes the reflection type liquid crystal light valve 300R, 300G, 300B is a TN type liquid crystal (a liquid crystal in which the major axis of liquid crystal molecules is aligned substantially parallel to the panel substrate when no voltage is applied) or S
An H-type liquid crystal (a liquid crystal in which the major axis of liquid crystal molecules is aligned substantially perpendicular to the panel substrate when no voltage is applied) is employed.

When a TN type liquid crystal is employed, the voltage applied to the liquid crystal layer sandwiched between the reflective electrode of the pixel and the common electrode of the opposing substrate is lower than the threshold voltage of the liquid crystal (OFF). Pixel), the incident color light is elliptically polarized by the liquid crystal layer, is reflected by the reflective electrode, and passes through the liquid crystal layer.
The light is reflected and emitted as light in a state close to elliptically polarized light having a large polarization axis component substantially shifted by 90 degrees from the polarization axis of the incident color light.
On the other hand, in a pixel (ON pixel) applied with a voltage to the liquid crystal layer,
The incident color light reaches the reflective electrode as it is, is reflected, and is reflected and emitted with the same polarization axis as that at the time of incidence. Since the alignment angle of the liquid crystal molecules of the TN type liquid crystal changes according to the voltage applied to the reflective electrode, the angle of the polarization axis of the reflected light with respect to the incident light depends on the voltage applied to the reflective electrode via the transistor of the pixel. Variable.

When the SH type liquid crystal is adopted, the pixel (OF) in which the voltage applied to the liquid crystal layer is equal to or lower than the threshold voltage of the liquid crystal.
F pixel), the incident color light reaches the reflective electrode as it is, is reflected, and is reflected and emitted with the same polarization axis as that at the time of incidence. On the other hand, in a pixel (ON pixel) to which a voltage is applied to the liquid crystal layer, the incident color light is elliptically polarized by the liquid crystal layer, reflected by the reflective electrode, and passes through the liquid crystal layer with respect to the polarization axis of the incident light. Is reflected and emitted as elliptically polarized light having a large polarization axis component shifted by about 90 degrees. As in the case of the TN type liquid crystal,
Since the alignment angle of the liquid crystal molecules of the TN type liquid crystal changes according to the voltage applied to the reflective electrode, the angle of the polarization axis of the reflected light with respect to the incident light depends on the voltage applied to the reflective electrode via the transistor of the pixel. Variable.

Of the color lights reflected from the pixels of the liquid crystal panel, the S-polarized light component does not pass through the polarization beam splitter 200 that reflects the S-polarized light, whereas the P-polarized light component does. An image is formed by the light transmitted through the polarizing beam splitter 200. Therefore, the projected image is T
When the N-type liquid crystal is used for the liquid crystal panel, the reflected light of the OFF pixel reaches the projection optical system 500 and the reflected light of the ON pixel does not reach the lens, so that a normally white display is obtained. The reflected light does not reach the projection optical system and the reflected light of the ON pixel reaches the projection optical system 500, so that normally black display is performed.

The reflection type liquid crystal panel has a TFT on a glass substrate.
Compared to an active matrix type liquid crystal panel having an array, the number of pixels can be formed more by using semiconductor technology, and the panel size can be made smaller, so that a high-definition image can be projected and a projector can be formed. Can be reduced in size.

As described above, the reflection type liquid crystal device and the case where the silicon substrate and the glass substrate constituting the reflection type liquid crystal device are joined to each other have been described as an example. The present invention can be widely used not only for liquid crystal devices using different substrates, but also for a bonding device for bonding two substrates and irradiating or heating ultraviolet rays from one side as well as the liquid crystal device.

The temperature of the reflective liquid crystal device used as a light valve rises due to light irradiation from the light source during use. Therefore, the cooling means is controlled to control the temperature of the transport pallet to the temperature during use. The sealing material may be cured at a temperature similar to that described above. This can further reduce the displacement between the pixel electrode on the reflection-side substrate and the light-shielding black matrix on the incident-side substrate.

[0048]

As described above, according to the first aspect of the present invention, when heated under the same conditions, a sealing material is applied to the peripheral portion of one of two substrates having different thermal expansion amounts from each other. In a liquid crystal device manufacturing apparatus in which the other substrate is opposed to and approached to irradiate light to cure the sealing material and join the two substrates at appropriate intervals, supporting means for supporting the substrates, A light irradiating unit for irradiating light for curing the sealing material applied to the substrate supported by the supporting unit; and a cooling unit for suppressing a temperature rise of the substrate due to the light irradiation on the substrate. As a result, the sealing material is cured while the thermal expansion of the substrate is suppressed, thereby enabling high-precision joining of the two substrates with little displacement and preventing the substrate from bending. can do. As a result, when applied to a liquid crystal device for a display device, there is an effect that a liquid crystal device having a high aperture ratio and good display quality can be obtained.

According to the second aspect of the present invention, since the cooling means is provided integrally with the supporting means, there is an effect that the substrate can be efficiently cooled.

According to a third aspect of the present invention, since the cooling means is an air-cooled cooling means including a heat radiating means provided on the support means, the structure can be simplified and an inexpensive device can be constituted. There is.

According to the fourth aspect of the present invention, since the cooling means is a water-cooled cooling means including a cooling water passage provided in the support means, there is an effect that the cooling efficiency is higher than that of the air-cooled type.

According to a fifth aspect of the present invention, the sealing material contains an ultraviolet-curable adhesive as a main component, and the light irradiation means is an ultraviolet lamp for irradiating ultraviolet light. Can be suppressed, and a desired cooling effect can be obtained by a cooling means having a simple structure.

According to a sixth aspect of the present invention, there is provided a liquid crystal device using two substrates having relatively large thermal expansion coefficients because one of the two substrates is a semiconductor substrate and the other is a glass substrate. This has the effect that a liquid crystal device having good characteristics can be obtained by preventing the curvature of the liquid crystal.

According to a seventh aspect of the present invention, when heated under the same condition, a sealing material is applied to a peripheral portion of one of two substrates having different thermal expansion amounts from each other, and the other substrate is caused to face and approach. And irradiating light to cure the sealing material,
In a method for manufacturing a liquid crystal device having a step of joining two substrates at appropriate intervals, the sealing material is cured by irradiating light to the sealing material while forcibly cooling the substrate. The sealant is hardened in a state where the expansion is suppressed, whereby the two substrates can be bonded with high accuracy with little displacement, and the substrates can be prevented from being curved. As a result, when applied to a liquid crystal device for a display device, there is an effect that a liquid crystal device having a high aperture ratio and good display quality can be obtained.

According to the eighth aspect of the present invention, the cooling is performed by the cooling means provided integrally with the supporting means for supporting the substrate. Therefore, the cooling of the substrate can be efficiently performed by the relatively small cooling means. There is an effect that can be.

According to a ninth aspect of the present invention, since the cooling means is an air-cooled cooling means having a heat radiating means provided on the support means, the structure can be simplified and an inexpensive apparatus can be constituted. There is.

According to a tenth aspect of the present invention, since the cooling means is a water-cooled cooling means having a cooling water passage provided in the support means, there is an effect that the cooling efficiency is higher than that of the air-cooled type.

According to an eleventh aspect of the present invention, the sealing material contains an ultraviolet-curable adhesive as a main component, and the light irradiation means is an ultraviolet lamp for irradiating ultraviolet light. Can be suppressed, and a desired cooling effect can be obtained by a cooling means having a simple structure.

According to a twelfth aspect of the present invention, there is provided a liquid crystal device using two substrates having relatively large thermal expansion coefficients because one of the two substrates is a semiconductor substrate and the other is a glass substrate. This has the effect that a liquid crystal device having good characteristics can be obtained by preventing the curvature of the liquid crystal.

According to a thirteenth aspect of the present invention, the semiconductor substrate of the two substrates is supported by the support means and the other glass substrate is brought close to and joined to the semiconductor substrate. Because the glass substrate is located,
Since a light irradiation means such as an ultraviolet lamp is arranged above and ultraviolet light can be irradiated from above, there is an effect that the configuration of the apparatus is simplified.

[Brief description of the drawings]

FIG. 1 is a schematic front view showing an embodiment of a substrate bonding apparatus to which the present invention is applied.

FIG. 2 is an enlarged explanatory view showing a configuration example of a transport pallet used in the embodiment apparatus of FIG. 1;

FIG. 3 is a schematic configuration diagram showing another embodiment of the substrate bonding apparatus to which the present invention is applied.

FIG. 4 is a cross-sectional view showing a cross-sectional configuration example of a reflective electrode side substrate of a reflective liquid crystal panel which is particularly effective by applying the present invention.

5 is a cross-sectional view showing a configuration example of a reflection type liquid crystal panel to which the liquid crystal panel substrate of FIG. 4 is applied.

FIG. 6 is a schematic configuration diagram of a main part of a projector (projection display device) using the reflection type liquid crystal panel of the embodiment as a light valve as viewed in plan.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Transport pallet 11a Cooling fin 12 Transfer means 13a-13c Ultraviolet lamp 20 Liquid crystal panel 21 Reflection side substrate (silicon substrate) 22 Incident side substrate (glass substrate) 31 Base substrate 32 Cooling water passage 33 Inlet 34 Outlet 101 Semiconductor substrate Reference Signs List 102 Well region 103 Field oxide film 104 Gate line 104a Gate electrode 105a, 105b Source / drain region 106 First interlayer insulating film 107 Data line 107a Source electrode 108 P-type doping region 109a Electrode of storage capacitor (conductive layer) 111 Second interlayer Insulating film 112 Light shielding film 113 Third interlayer insulating film 114 Pixel electrode (reflective electrode) 115 Connection plug 116 Contact hole 117 Passivation film 131 Liquid crystal panel substrate 132 Support substrate 133 Common electrode 135 Incident Glass substrate 136 sealing material 137 LCD 200 polarizing beam splitter 300 light valve (reflection-type liquid crystal panel) 410 light source 412 and 413 dichroic mirror 500 the projection optical system 600 screen

Claims (13)

[Claims] When a substrate is heated under the same condition, a sealing material is applied to a peripheral portion of one of two substrates having different thermal expansion amounts from each other, and the other substrate is irradiated with light while being opposed to and approaching the other substrate. An apparatus for manufacturing a liquid crystal device in which the sealing material is cured to join the two substrates at appropriate intervals, wherein a supporting means for supporting the substrate, and a coating means applied to the substrate supported by the supporting means. A light irradiating unit for irradiating the substrate with light for curing the sealing material, and a cooling unit for suppressing a temperature rise of the substrate due to the irradiation of the substrate with light. 2. The apparatus according to claim 1, wherein the cooling unit is provided integrally with the support unit. 3. The apparatus according to claim 2, wherein the cooling unit is an air-cooling type cooling unit including a heat radiating unit provided on the supporting unit. 4. The apparatus according to claim 2, wherein the cooling means is a water-cooled cooling means including a cooling water passage provided in the support means. 5. The method according to claim 1, wherein the sealing material contains an ultraviolet-curable adhesive as a main component, and the light irradiating means is an ultraviolet lamp for irradiating ultraviolet light. Or the manufacturing apparatus of the liquid crystal device according to 4. 6. The apparatus according to claim 1, wherein one of the two substrates is a semiconductor substrate, and the other substrate is a glass substrate. . 7. When heated under the same condition, a sealing material is applied to a peripheral portion of one of two substrates having different thermal expansion amounts from each other, and the other substrate is irradiated with light while being opposed to and approaching the other substrate. A method of manufacturing the liquid crystal device, comprising: curing the sealing material to join the two substrates at appropriate intervals, wherein the sealing material is irradiated with light while forcibly cooling the substrate. A method for manufacturing a liquid crystal device, characterized by curing. 8. The method according to claim 7, wherein the cooling is performed by cooling means provided integrally with a supporting means for supporting the substrate. 9. The method according to claim 8, wherein the cooling unit is an air-cooling type cooling unit having a heat radiating unit provided on the supporting unit. 10. The method according to claim 8, wherein the cooling unit is a water-cooled cooling unit having a cooling water passage provided in the support unit. 11. The sealing material contains an ultraviolet-curable adhesive as a main component, and the light irradiation means includes:
The method according to claim 7, 8, 9 or 10, wherein the method is an ultraviolet lamp for irradiating ultraviolet light. 12. The method according to claim 7, wherein one of the two substrates is a semiconductor substrate and the other substrate is a glass substrate. . 13. The method for manufacturing a liquid crystal device according to claim 12, wherein a semiconductor substrate of the two substrates is supported by the supporting means, and the other glass substrate is brought close to and joined to the semiconductor substrate.