JP2000190203A - Polishing device - Google Patents

Polishing device

Info

Publication number
JP2000190203A
JP2000190203A JP36503498A JP36503498A JP2000190203A JP 2000190203 A JP2000190203 A JP 2000190203A JP 36503498 A JP36503498 A JP 36503498A JP 36503498 A JP36503498 A JP 36503498A JP 2000190203 A JP2000190203 A JP 2000190203A
Authority
JP
Japan
Prior art keywords
transmitting medium
polishing apparatus
pressure transmitting
polishing
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP36503498A
Other languages
Japanese (ja)
Other versions
JP3628193B2 (en
Inventor
Kentaro Saotome
健太郎 早乙女
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP36503498A priority Critical patent/JP3628193B2/en
Publication of JP2000190203A publication Critical patent/JP2000190203A/en
Application granted granted Critical
Publication of JP3628193B2 publication Critical patent/JP3628193B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a polishing device which can maintain the flatness without making the surface form in a convex form, as well as can improve the surface coarseness by the polishing. SOLUTION: A carrier 4 has a carrier main body 7 having a housing recess 6 whose lower side is opened; an elastic membrane 9 provided to form a pressurizing chamber 8 to the housing recess 6; a pressure transmitting medium 10 provided at the opposite side of the pressurizing chamber 8 making the elastic membrane 9 at the center; and a retainer 11 provided at the periphery of the pressure transmitting medium 10 and holding a work W. And the pressure transmitting medium 10 has a divergent form to expand its cross section gradually, and its bottom surface part 10d has a plane form in order to press the work W.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体ウェーハなど
の表面を研磨する研磨装置に係わり、特に半導体ウェー
ハを平坦に研磨できる研磨装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus for polishing a surface of a semiconductor wafer or the like, and more particularly to a polishing apparatus for polishing a semiconductor wafer flat.

【0002】[0002]

【従来の技術】半導体ウェーハを製造するには、多結晶
シリコンから例えばチョクラルスキー法により単結晶の
半導体インゴットを作り、このインゴットをマルチワイ
ヤソーなどにより所定の厚さにスライシングし、半導体
ウェーハを製造する。
2. Description of the Related Art To manufacture a semiconductor wafer, a single crystal semiconductor ingot is made from polycrystalline silicon by, for example, the Czochralski method, and the ingot is sliced to a predetermined thickness by a multi-wire saw or the like to manufacture a semiconductor wafer. I do.

【0003】この半導体ウェーハの表面を平坦にするた
め、研磨装置により研磨が行われる。
In order to flatten the surface of the semiconductor wafer, polishing is performed by a polishing apparatus.

【0004】従来の研磨装置としては、特開昭63−5
2967号公報に記載されているように、キャリア本体
の下方に、下方が開放された収納凹部を形成し、この収
納凹部の下部に下端開口縁を閉塞する弾性膜を設け、収
納凹部の弾性膜により仕切られて形成された加圧室に流
体を充填すると共に、扁平円板形状を弾性膜に当接して
圧力伝達媒体(マウントプレート)を設けて、この圧力
伝達媒体によりワークを均一押圧するようにした研磨装
置がある。
A conventional polishing apparatus is disclosed in Japanese Patent Application Laid-Open No. 63-5 / 1988.
As described in Japanese Patent Publication No. 2967, a storage recess is formed below the carrier body, and an elastic film for closing a lower end opening edge is provided below the storage recess. The pressurized chamber formed by the partitioning is filled with a fluid, and a flat disc shape is brought into contact with the elastic film to provide a pressure transmitting medium (mount plate), and the work is uniformly pressed by the pressure transmitting medium. There is a polishing apparatus that has been developed.

【0005】また、図5に示すように、キャリア31は
下方が開放された収納凹部32を有するキャリア本体3
3と、収納凹部32に加圧室34が形成されるように設
けられた弾性膜35と、この弾性膜35を挟んで加圧室
34と反対側に設けられた扁平円板形状の圧力伝達媒体
36と、この圧力伝達媒体36の周囲に設けられワーク
Wを保持するリテーナ37と、このリテーナ37を囲繞
するスキージ40とを有し、この圧力伝達媒体36によ
りバックフィルム39を介してワークWを均一に定盤3
8に設けられた研磨布Pに押圧するようにした研磨装置
がある。
[0005] As shown in FIG. 5, the carrier 31 is a carrier main body 3 having a storage recess 32 whose lower part is opened.
3, an elastic film 35 provided so that the pressurizing chamber 34 is formed in the accommodation recess 32, and a flat disk-shaped pressure transmission provided on the opposite side of the elastic film 35 from the pressurizing chamber 34. A medium 36, a retainer 37 provided around the pressure transmitting medium 36 to hold the work W, and a squeegee 40 surrounding the retainer 37, are provided by the pressure transmitting medium 36 via the back film 39. The surface plate 3 evenly
There is a polishing apparatus that presses against the polishing cloth P provided on the polishing pad 8.

【0006】[0006]

【発明が解決しようとする課題】これら従来の研磨装置
は、いずれも扁平円板形状の圧力伝達媒体によりワーク
を均一に押圧するものであるため、例えば図5における
従来例では、研磨中のワークWの面内部分の研磨布Pに
対する相対速度ベクトルを時間積分すると、その値はワ
ークWの中心で最小値をとり、外周部分で最大値をとる
ことになり、いずれの従来の研磨装置を用いて研磨した
ワークもその加工後の形状が中心部分が最も厚く、外周
部分にいくに従って肉薄になるコンベックス形状にな
る。
Since all of these conventional polishing apparatuses press the work uniformly with a flat disk-shaped pressure transmitting medium, for example, in the conventional example shown in FIG. When the relative velocity vector of the in-plane portion of W with respect to the polishing cloth P is integrated over time, the value takes the minimum value at the center of the work W and takes the maximum value at the outer peripheral portion. The polished workpiece also has a convex shape in which the shape after processing is thickest at the center portion and becomes thinner toward the outer peripheral portion.

【0007】このコンベックス形状になる原因は、ワー
クの研磨加工レートが研磨布との相対速度、圧力、温度
などの時間関数であり、それぞれが大きくなると研磨加
工レートが大きくなるためである。すなわち、圧力分布
が均一な場合には、各部分の相対速度の大小に応じて研
磨加工レートが変化することになるからである。
The reason why the convex shape is formed is that the polishing rate of the workpiece is a time function such as the relative speed with respect to the polishing cloth, the pressure, the temperature, and the like. That is, when the pressure distribution is uniform, the polishing rate changes according to the relative speed of each part.

【0008】そのため、従来、片面研磨を行うとワーク
の面形状がコンベックス形状になってしまい、実質平坦
度が低下していた。
[0008] Therefore, conventionally, when single-side polishing is performed, the surface shape of the work becomes a convex shape, and the flatness is substantially reduced.

【0009】本発明は上述した事情を考慮してなされた
もので、研磨による面粗さが向上できると共に、面形状
をコンベックス形状にさせずに平坦度を維持できる研磨
装置を提供することを目的とする。
The present invention has been made in view of the above circumstances, and has as its object to provide a polishing apparatus which can improve the surface roughness by polishing and maintain the flatness without changing the surface shape into a convex shape. And

【0010】[0010]

【課題を解決するための手段】上記目的を達成するため
になされた本願請求項1の発明は、研磨布が設けられた
定盤と、前記研磨布に押圧されて研磨されるワークが取
付けられ回転軸により回転されるキャリアとを有する研
磨装置において、キャリアは下方が開放された収納凹部
を有するキャリア本体と、この収納凹部に加圧室が形成
されるように設けられた弾性膜と、この弾性膜を挟んで
加圧室と反対側に設けられた圧力伝達媒体と、この圧力
伝達媒体の周囲に設けられワークを保持するリテーナと
を有し、前記圧力伝達媒体は断面積が順次拡大する末広
形状をなし、かつ底面部がワーク押圧のために平面形状
をなすことを特徴とする研磨装置であることを要旨とし
ている。
Means for Solving the Problems In order to achieve the above object, the invention of claim 1 of the present application comprises a platen provided with a polishing cloth, and a work to be polished by being pressed by the polishing cloth. In a polishing apparatus having a carrier rotated by a rotating shaft, the carrier has a carrier main body having a storage recess opened at the bottom, an elastic film provided so as to form a pressure chamber in the storage recess, and It has a pressure transmitting medium provided on the opposite side to the pressurizing chamber with the elastic film interposed therebetween, and a retainer provided around the pressure transmitting medium and holding the work, and the pressure transmitting medium has a cross-sectional area which is sequentially enlarged. The gist of the present invention is to provide a polishing apparatus characterized in that the polishing apparatus has a divergent shape and a bottom surface has a planar shape for pressing a work.

【0011】本願請求項2の発明では、前記圧力伝達媒
体は底面部が平面形状をなす扁平円柱部を有する円錐体
であることを特徴とする請求項1に記載の研磨装置であ
ることを要旨としている。
According to the second aspect of the present invention, the polishing apparatus according to the first aspect, wherein the pressure transmitting medium is a cone having a flat cylindrical portion having a flat bottom surface. And

【0012】本願請求項3の発明では、前記圧力伝達媒
体の円錐体は扁平であり、その頂部が球面形状または平
面形状に截頭されていることを特徴とする請求項2に記
載の研磨装置であることを要旨としている。
The polishing apparatus according to claim 2, wherein the conical body of the pressure transmitting medium is flat and the top is truncated into a spherical shape or a planar shape. The gist is that

【0013】本願請求項4の発明では、前記圧力伝達媒
体はアルミナ系ファインセラミクスであることを特徴と
する請求項1ないし3項のいずれか1項に記載の研磨装
置であることを要旨としている。
[0013] In the invention of claim 4 of the present application, the gist is the polishing apparatus according to any one of claims 1 to 3, wherein the pressure transmission medium is alumina-based fine ceramics. .

【0014】本願請求項5の発明では、前記圧力伝達媒
体は厚さが3〜5mmの薄肉体の積層構造であることを
特徴とする請求項1ないし4項のいずれか1項に記載の
研磨装置であることを要旨としている。
The polishing method according to any one of claims 1 to 4, wherein the pressure transmitting medium has a laminated structure of a thin body having a thickness of 3 to 5 mm. The gist is that it is a device.

【0015】本願請求項6の発明では、前記薄肉体はア
ルミナ系ファインセラミクスの成形体であることを特徴
とする請求項5に記載の研磨装置であることを要旨とし
ている。
According to a sixth aspect of the present invention, there is provided a polishing apparatus according to the fifth aspect, wherein the thin body is a molded body of alumina-based fine ceramics.

【0016】本願請求項7の発明では、前記圧力伝達媒
体は薄肉体を接着剤で接着して積層構造にしたことを特
徴とする請求項5または6項に記載の研磨装置であるこ
とを要旨としている。
According to a seventh aspect of the present invention, in the polishing apparatus according to the fifth or sixth aspect, the pressure transmitting medium is formed by laminating a thin body with an adhesive. And

【0017】本願請求項8の発明では、前記圧力伝達媒
体は薄肉体をネジまたはピンで固定して積層構造にした
ことを特徴とする請求項5または6項に記載の研磨装置
であることを要旨としている。
In the polishing apparatus according to the present invention, preferably, the pressure transmitting medium has a laminated structure in which a thin body is fixed with screws or pins. It is a gist.

【0018】[0018]

【発明の実施の形態】以下、本発明に係わる研磨装置の
実施形態について添付図面を参照して説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a polishing apparatus according to the present invention will be described below with reference to the accompanying drawings.

【0019】本発明に係わる研磨装置1は、図2に示す
ように、研磨布Pが設けられ駆動回転される定盤2と、
研磨布Pに押圧し研磨されるワークWが取付けられ回転
軸3により回転されるキャリア4と、スラリSを供給す
るスラリパイプ5を有している。
As shown in FIG. 2, a polishing apparatus 1 according to the present invention comprises: a platen 2 provided with a polishing cloth P;
It has a carrier 4 on which a work W to be pressed and polished against a polishing cloth P is mounted and rotated by a rotating shaft 3, and a slurry pipe 5 for supplying a slurry S.

【0020】図1に示すように、キャリア4は扁平円板
形状で、下方が開放された収納凹部6を有するキャリア
本体7と、収納凹部6に加圧室8が形成されるように設
けられた弾性膜9と、この弾性膜9を挟んで加圧室8と
反対側に設けられた圧力伝達媒体10と、この圧力伝達
媒体10の周囲に設けられワークWを保持するリテーナ
11と、圧力伝達媒体10とリテーナ11を囲繞するよ
うに設けられ弾性体から成るリング形状のスキージ12
と、圧力伝達媒体10とワークW間に介在するバックフ
ィルム13とを有している。
As shown in FIG. 1, the carrier 4 has a flat disk shape and is provided so as to form a carrier body 7 having a storage recess 6 opened downward and a pressurizing chamber 8 formed in the storage recess 6. An elastic film 9, a pressure transmitting medium 10 provided on the opposite side to the pressurizing chamber 8 with the elastic film 9 interposed therebetween, a retainer 11 provided around the pressure transmitting medium 10 for holding the work W, A ring-shaped squeegee 12 provided around the transmission medium 10 and the retainer 11 and made of an elastic body.
And a back film 13 interposed between the pressure transmission medium 10 and the work W.

【0021】弾性膜9は例えば薄板円板形状のステンレ
スファイバー強化シリコンゴム製であり、リテーナ11
はPTFE(Polytetrafluoroethylene )製であり、円
弧面を有する短冊形状であり、複数本リング形状に配設
されている。
The elastic film 9 is made of, for example, a stainless disk reinforced silicon rubber in the shape of a thin disk, and has a retainer 11.
Is made of PTFE (Polytetrafluoroethylene), has a strip shape having an arc surface, and is arranged in a plurality of ring shapes.

【0022】図3に示すように、圧力伝達媒体10は断
面積が順次拡大する末広形状をなしかつ底面部10dは
ワークWを押圧するために平面形状をなしており、例え
ばシリコンウェーハWが直径300mm用では、直径D
300.8mm、頂部10aが球面形状をなし、中心部
厚さT25mm、外周端部厚さt10mmを有し、下部
に扁平の円柱部10bを有する截頭円錐体10c形状を
なしており、円柱部10bの平面形状の底面部10dで
バックフィルム13を介してシリコンウェーハWを押圧
するようになっている。
As shown in FIG. 3, the pressure transmitting medium 10 has a divergent shape in which the cross-sectional area gradually increases, and the bottom surface portion 10d has a planar shape for pressing the work W. For example, the silicon wafer W has a diameter of For 300mm, the diameter D
300.8 mm, the top portion 10a has a spherical shape, the center portion has a thickness T25mm, the outer peripheral end portion has a thickness t10mm, and the lower portion has a truncated cone 10c having a flat cylindrical portion 10b. The silicon wafer W is pressed via the back film 13 at the bottom surface portion 10d of the planar shape 10b.

【0023】なお、圧力伝達媒体10の頂部10aは必
ずしも球面形状でなく平面形状に截頭したものでもよ
く、さらに必ずしも球面形状または平面形状に截頭する
必要がなく、円錐形状であっても本発明の目的を達成で
きるが、シリコンウェーハWに加わる圧力の調整、弾性
膜9の耐久性を考慮すると球面形状または平面形状に截
頭するのが好ましい。
The top portion 10a of the pressure transmitting medium 10 may not necessarily be truncated to a spherical shape but to a planar shape, and need not necessarily be truncated to a spherical shape or a planar shape. Although the object of the present invention can be achieved, it is preferable to cut off to a spherical shape or a planar shape in consideration of the adjustment of the pressure applied to the silicon wafer W and the durability of the elastic film 9.

【0024】スキージ12は例えばシリコンゴム製であ
り、バックフィルム13は例えば発泡ポリウレタン製で
ある。
The squeegee 12 is made of, for example, silicone rubber, and the back film 13 is made of, for example, foamed polyurethane.

【0025】上記加圧室8は回転軸3に設けられた送気
路14を介して加圧装置(図示せず)に接続されて、適
宜加圧されるようになっている。
The pressurizing chamber 8 is connected to a pressurizing device (not shown) through an air supply passage 14 provided on the rotating shaft 3 so that the pressurizing chamber 8 is appropriately pressurized.

【0026】次に本発明に係わる圧力伝達媒体10を有
する研磨装置1を用いたシリコンウェーハWの研磨工程
について説明する。
Next, a polishing process of the silicon wafer W using the polishing apparatus 1 having the pressure transmitting medium 10 according to the present invention will be described.

【0027】図1に示すように、研磨すべきシリコンウ
ェーハWはリテーナ11により挟持されてキャリア4に
取付けられる。キャリア4に取付けられたシリコンウェ
ーハWはバックフィルム13を介して平面形状の底面部
10dに密接している。
As shown in FIG. 1, a silicon wafer W to be polished is held by a retainer 11 and attached to a carrier 4. The silicon wafer W attached to the carrier 4 is in close contact with the planar bottom portion 10 d via the back film 13.

【0028】しかる後、図2に示すスラリパイプ5から
スラリSを研磨布Pに供給しながら、時計方向に回転す
るキャリア4を下降させて、時計方向に回転定盤2に設
けられた研磨布PにシリコンウェーハWを押圧する。シ
リコンウェーハWを回転する研磨布Pに押圧しながら、
回転するキャリア4をX軸、Y軸方向に揺動させて二次
元の複雑な動きにより、シリコンウェーハWを均一に研
磨する。この研磨工程において、キャリア本体7の加圧
室8は回転軸3に設けられた送気路14を介して加圧装
置からの圧縮空気により加圧されており、圧力伝達媒体
10は弾性膜9を介して下方に押圧される。このとき圧
力伝達媒体10は下部に扁平の円柱部10bを有する截
頭円錐体10c形状をなしているので、シリコンウェー
ハWにかかる押圧力は、中心部分が大きく、圧力伝達媒
体10が撓むので外周部分は小さくなる。これに伴っ
て、加圧力による研磨速度は中心部分で最大になり、外
周に向かうに従って小さくなり、外周部分で最小にな
る。一方、研磨布Pとの相対速度による研磨速度は、こ
れとは反対に中心部分で最小になり、外周部分で最大に
なるので、これらの現象の相乗作用によりお互いに相殺
されて、シリコンウェーハWの中心部分と外周部分は均
一に研磨され、ウェーハW全体も均一に研磨される。
Thereafter, while supplying the slurry S to the polishing pad P from the slurry pipe 5 shown in FIG. 2, the carrier 4 rotating clockwise is lowered, and the polishing pad provided on the rotary platen 2 is rotated clockwise. The silicon wafer W is pressed against P. While pressing the silicon wafer W against the rotating polishing cloth P,
By rotating the rotating carrier 4 in the X-axis and Y-axis directions, the silicon wafer W is uniformly polished by two-dimensional complicated movement. In this polishing step, the pressurizing chamber 8 of the carrier body 7 is pressurized by compressed air from a pressurizing device via an air supply path 14 provided on the rotating shaft 3, and the pressure transmitting medium 10 is Is pressed downward through At this time, since the pressure transmitting medium 10 has the shape of a truncated cone 10c having a flat cylindrical portion 10b at the lower portion, the pressing force applied to the silicon wafer W is large at the central portion and the pressure transmitting medium 10 is bent. The outer peripheral portion becomes smaller. Accordingly, the polishing rate by the pressing force becomes maximum at the central portion, decreases toward the outer periphery, and becomes minimum at the outer peripheral portion. On the other hand, the polishing speed based on the relative speed with respect to the polishing pad P is, on the contrary, minimum at the central portion and maximum at the outer peripheral portion. Of the wafer W is uniformly polished, and the entire wafer W is also uniformly polished.

【0029】上述のように相対速度による研磨速度の増
減を相殺するように圧力伝達媒体10の形状を設計する
ことにより圧力による研磨速度の増減を調整すれば、平
坦度の優れたシリコンウェーハWを常に得ることができ
る。
As described above, by designing the shape of the pressure transmitting medium 10 so as to offset the increase / decrease in the polishing rate due to the relative speed, and adjusting the increase / decrease in the polishing rate due to the pressure, a silicon wafer W having excellent flatness can be obtained. You can always get.

【0030】また、圧力伝達媒体10は断面形状が末広
薄肉形状になっているので、圧力伝達媒体10は弾性を
有し、振動を吸収し易く、そのため研磨面が振動の影響
を受けることがなく、高精度の研磨面を得ることができ
る。
Further, since the pressure transmitting medium 10 has a divergent and thin-walled cross section, the pressure transmitting medium 10 has elasticity and easily absorbs vibration, so that the polished surface is not affected by the vibration. A highly accurate polished surface can be obtained.

【0031】さらに、例えばシリコンウェーハWの中心
部分により大きな押圧力がかかるように圧力伝達媒体1
0を設計すれば、全体的に凹面形状のシリコンウェーハ
を得ることもできる。
Further, for example, the pressure transmitting medium 1 is applied so that a larger pressing force is applied to the central portion of the silicon wafer W.
If 0 is designed, a silicon wafer having an overall concave shape can be obtained.

【0032】なお、圧力伝達媒体10の下部に扁平の円
柱部10bが設けられているので、圧力伝達媒体10の
製造時に先端部分が欠けたり、使用中に集中応力により
破損することもない。
Since the flat cylindrical portion 10b is provided below the pressure transmitting medium 10, the tip portion is not chipped at the time of manufacturing the pressure transmitting medium 10, and the pressure transmitting medium 10 is not damaged by concentrated stress during use.

【0033】なお、上記実施形態においては、加圧媒体
を空気で説明したが、窒素などの不活性ガスまたは水、
油等の液体を使用することも可能である。
In the above embodiment, the pressurized medium is described as air, but an inert gas such as nitrogen or water,
It is also possible to use liquids such as oil.

【0034】次に本発明に係わる研磨装置の他の実施形
態について説明する。
Next, another embodiment of the polishing apparatus according to the present invention will be described.

【0035】第1の実施形態を同一部分には同一符号を
付して説明する。図4に示すように、キャリア4は扁平
円板形状で、下方が開放された収納凹部6を有するキャ
リア本体7と、収納凹部6に加圧室8が形成ように設け
られた弾性膜9と、この弾性膜9を挟んで加圧室8と反
対側に設けられた圧力伝達媒体20と、この圧力伝達媒
体20の周囲に設けられワークWを保持するリテーナ1
1と、圧力伝達媒体20と、この圧力伝達媒体20とリ
テーナ11を囲繞するように設けられ弾性体のリング形
状のスキージ12と、圧力伝達媒体20とワークW間に
介在するバックフィルム13とを有している。
The first embodiment will be described by giving the same reference numerals to the same parts. As shown in FIG. 4, the carrier 4 has a flat disk shape, a carrier body 7 having a storage recess 6 opened at the bottom, and an elastic film 9 provided to form a pressurizing chamber 8 in the storage recess 6. A pressure transmission medium 20 provided on the opposite side of the pressure chamber 8 with the elastic film 9 interposed therebetween; and a retainer 1 provided around the pressure transmission medium 20 for holding the workpiece W.
1, a pressure transmission medium 20, an elastic ring-shaped squeegee 12 provided so as to surround the pressure transmission medium 20 and the retainer 11, and a back film 13 interposed between the pressure transmission medium 20 and the work W. Have.

【0036】圧力伝達媒体20は球面形状の頂部20a
と下部に扁平な円柱部20bを有する截頭円錐体20c
形状をなしており、円柱部20bの底面部20dは平面
形状をなしている。さらに、圧力伝達媒体20は、中心
部厚さ25mmであり直径300.8mmの末広形状で
あることから、その形状に類似させるために厚さが3〜
5mmの薄肉体の積層構造で形成されており、この積層
構造はアルミナ系ファインセラミクスの成形体20pを
結合手段、例えば接着剤で結合することにより形成され
ている。
The pressure transmitting medium 20 has a spherical top 20a.
And a truncated cone 20c having a flat cylindrical portion 20b at the bottom
The bottom surface 20d of the cylindrical portion 20b has a planar shape. Furthermore, since the pressure transmission medium 20 has a central portion thickness of 25 mm and a divergent shape with a diameter of 300.8 mm, the pressure transmission medium 20 has a thickness of 3 to 3 mm to resemble the shape.
It is formed in a laminated structure of a thin body of 5 mm, and this laminated structure is formed by bonding the molded body 20p of alumina-based fine ceramics with a bonding means, for example, an adhesive.

【0037】このような構造の圧力伝達媒体20は、板
バネ構造となるためワークWの中心部分を大きな押圧力
で、外周部分を小さな押圧力でより効果的に押圧するこ
とができ、より均一にワークWを研磨することができ
る。
Since the pressure transmitting medium 20 having such a structure has a leaf spring structure, the central portion of the workpiece W can be more effectively pressed with a large pressing force and the outer peripheral portion thereof can be pressed more effectively with a small pressing force. The work W can be polished.

【0038】なお、本実施形態において、結合手段に接
着剤を用いたが、例えばネジまたはピンを用いても板バ
ネ構造の圧力伝達媒体20が得られ、さらには円柱形状
の圧力伝達媒体を加工して一体形状としてもよく、これ
を用いればより均一にワークWを研磨することができ
る。
In this embodiment, an adhesive is used for the connecting means. However, for example, a pressure transmitting medium 20 having a leaf spring structure can be obtained by using a screw or a pin. In this case, the work W can be more uniformly polished.

【0039】[0039]

【実施例】直径300.8mm、頂部が球面形状をな
し、中心部厚さ25mm、外周端部厚さ10mmを有す
るアルミナ系セラミックス製圧力伝達媒体を用い直径3
00mm、厚さ750mmのシリコンウェーハをコロイ
ダルシリカの純水懸濁液を用いて研磨したところ、中心
部分の厚さが外周部分よりも1μm薄い、凹面形状のシ
リコンウェーハを得た。
EXAMPLE A pressure transmission medium made of alumina ceramics having a diameter of 300.8 mm, a spherical top, a center thickness of 25 mm, and an outer end thickness of 10 mm was used.
When a silicon wafer having a thickness of 00 mm and a thickness of 750 mm was polished using a suspension of pure water of colloidal silica, a silicon wafer having a concave shape in which the thickness of a central portion was 1 μm thinner than that of an outer peripheral portion was obtained.

【0040】[0040]

【発明の効果】本発明に係わる研磨装置を用いること
で、高精度の研磨面を得ることができると共に、面形状
をコンベックス形状にさせずにより平坦なワークを得る
ことができる。
By using the polishing apparatus according to the present invention, a highly accurate polished surface can be obtained, and a flat work can be obtained without making the surface shape convex.

【0041】圧力伝達媒体に扁平円柱部を設けられば、
圧力伝達媒体の製造時に先端部分が欠けたり、使用中に
集中応力により破損することもない。
If a flat cylindrical portion is provided in the pressure transmitting medium,
The tip portion is not chipped during the production of the pressure transmission medium, and the pressure transmission medium is not damaged by concentrated stress during use.

【0042】圧力伝達媒体の円錐体を扁平にし、頂部を
球面体または平面形状に截頭すれば、ワークに加わる圧
力の調整が容易になり、より高精度の研磨面を得ること
ができると共に、弾性膜の耐久性を向上させることがで
きる。
If the conical body of the pressure transmitting medium is flattened and the top is truncated to a spherical body or a planar shape, the pressure applied to the work can be easily adjusted, and a highly accurate polished surface can be obtained. The durability of the elastic film can be improved.

【0043】圧力伝達媒体はアルミナ系ファインセラミ
クスにすれば、耐久性があり、ワークに対する汚染もな
い。
If the pressure transmission medium is made of alumina fine ceramics, the medium is durable and does not contaminate the work.

【0044】圧力伝達媒体を厚さが3〜5mmの薄肉体
の積層構造にすれば、板バネ構造になり、ワークの中心
部分を大きな押圧力で、外周部分を小さな押圧力でより
効果的に押圧することができて、より均一にワークを研
磨することができる。
If the pressure transmitting medium has a laminated structure of a thin body having a thickness of 3 to 5 mm, it becomes a leaf spring structure, and the central part of the work is more effectively pressed with a large pressing force, and the outer peripheral part thereof is more effectively pressed with a small pressing force. The work can be pressed, and the work can be polished more uniformly.

【0045】薄肉体をアルミナ系ファインセラミクスの
成形体で形成すれば、耐久性があり、ワークを汚染しな
い板バネ構造の圧力伝達媒体が得られる。
If the thin body is formed from a molded body of alumina fine ceramics, a pressure transmitting medium having a leaf spring structure which is durable and does not contaminate the work can be obtained.

【0046】圧力伝達媒体が薄肉体を接着剤で接着した
積層構造であれば、容易に板バネ構造の圧力伝達媒体が
得られる。
If the pressure transmitting medium has a laminated structure in which a thin body is bonded with an adhesive, a pressure transmitting medium having a leaf spring structure can be easily obtained.

【0047】圧力伝達媒体が薄肉体をネジまたはピンで
固定した積層構造であれば、より強固な板バネ構造の圧
力伝達媒体が得られる。
If the pressure transmitting medium has a laminated structure in which a thin body is fixed with screws or pins, a stronger pressure transmitting medium having a leaf spring structure can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係わる研磨装置に用いられるキャリア
の断面図。
FIG. 1 is a sectional view of a carrier used in a polishing apparatus according to the present invention.

【図2】本発明に係わる研磨装置の説明図。FIG. 2 is an explanatory view of a polishing apparatus according to the present invention.

【図3】本発明に係わる研磨装置のキャリアに用いられ
る圧力伝達媒体の側面図。
FIG. 3 is a side view of a pressure transmission medium used for a carrier of the polishing apparatus according to the present invention.

【図4】本発明に係わる研磨装置に用いられるキャリア
の他の実施形態の断面図。
FIG. 4 is a sectional view of another embodiment of the carrier used in the polishing apparatus according to the present invention.

【図5】従来の研磨装置に用いられるキャリアの断面
図。
FIG. 5 is a cross-sectional view of a carrier used in a conventional polishing apparatus.

【符号の説明】[Explanation of symbols]

1 研磨装置 2 定盤 3 回転軸 4 キャリア 5 スラリパイプ 6 収納凹部 7 キャリア本体 8 加圧室 9 弾性膜 10 圧力伝達媒体 10a 頂部 10b 円柱部 10c 截頭円錐体 10d 底面部 11 リテーナ 12 スキージ 13 バックフィルム 14 送気路 DESCRIPTION OF SYMBOLS 1 Polishing apparatus 2 Surface plate 3 Rotating shaft 4 Carrier 5 Slurry pipe 6 Storage concave part 7 Carrier main body 8 Pressurizing chamber 9 Elastic film 10 Pressure transmission medium 10a Top part 10b Column part 10c Truncated cone 10d Bottom part 11 Retainer 12 Squeegee 13 Back Film 14 Airway

─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成11年3月10日(1999.3.1
0)
[Submission date] March 10, 1999 (1999.3.1.
0)

【手続補正1】[Procedure amendment 1]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図4[Correction target item name] Fig. 4

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図4】 FIG. 4

【手続補正2】[Procedure amendment 2]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図5[Correction target item name] Fig. 5

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図5】 FIG. 5

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 研磨布が設けられた定盤と、前記研磨布
に押圧されて研磨されるワークが取付けられ回転軸によ
り回転されるキャリアとを有する研磨装置において、キ
ャリアは下方が開放された収納凹部を有するキャリア本
体と、この収納凹部に加圧室が形成されるように設けら
れた弾性膜と、この弾性膜を挟んで加圧室と反対側に設
けられた圧力伝達媒体と、この圧力伝達媒体の周囲に設
けられワークを保持するリテーナとを有し、前記圧力伝
達媒体は断面積が順次拡大する末広形状をなし、かつ底
面部がワーク押圧のために平面形状をなすことを特徴と
する研磨装置。
1. A polishing apparatus comprising: a platen provided with a polishing cloth; and a carrier on which a work to be pressed and polished by the polishing cloth is mounted and which is rotated by a rotating shaft. A carrier body having a storage recess, an elastic film provided so as to form a pressure chamber in the storage recess, a pressure transmission medium provided on the opposite side of the pressure chamber with the elastic film interposed therebetween, A retainer provided around the pressure transmission medium for holding the work, wherein the pressure transmission medium has a divergent shape whose cross-sectional area gradually increases, and a bottom surface has a planar shape for pressing the work. Polishing equipment.
【請求項2】 前記圧力伝達媒体は底面部が平面形状を
なす扁平円柱部を有する円錐体であることを特徴とする
請求項1に記載の研磨装置。
2. The polishing apparatus according to claim 1, wherein the pressure transmitting medium is a conical body having a flat cylindrical portion whose bottom surface has a planar shape.
【請求項3】 前記圧力伝達媒体の円錐体は扁平であ
り、その頂部が球面形状または平面形状に截頭されてい
ることを特徴とする請求項2に記載の研磨装置。
3. The polishing apparatus according to claim 2, wherein the cone of the pressure transmitting medium is flat, and the top is truncated to a spherical shape or a planar shape.
【請求項4】 前記圧力伝達媒体はアルミナ系ファイン
セラミクスであることを特徴とする請求項1ないし3項
のいずれか1項に記載の研磨装置。
4. The polishing apparatus according to claim 1, wherein the pressure transmitting medium is alumina-based fine ceramics.
【請求項5】 前記圧力伝達媒体は厚さが3〜5mmの
薄肉体の積層構造であることを特徴とする請求項1ない
し4項のいずれか1項に記載の研磨装置。
5. The polishing apparatus according to claim 1, wherein the pressure transmitting medium has a laminated structure of a thin body having a thickness of 3 to 5 mm.
【請求項6】 前記薄肉体はアルミナ系ファインセラミ
クスの成形体であることを特徴とする請求項5に記載の
研磨装置。
6. The polishing apparatus according to claim 5, wherein the thin body is a molded body of alumina fine ceramics.
【請求項7】 前記圧力伝達媒体は薄肉体を接着剤で接
着して積層構造にしたことを特徴とする請求項5または
6項に記載の研磨装置。
7. The polishing apparatus according to claim 5, wherein the pressure transmitting medium has a laminated structure by bonding a thin body with an adhesive.
【請求項8】 前記圧力伝達媒体は薄肉体をネジまたは
ピンで固定して積層構造にしたことを特徴とする請求項
5または6項に記載の研磨装置。
8. The polishing apparatus according to claim 5, wherein the pressure transmitting medium has a laminated structure in which a thin body is fixed with screws or pins.
JP36503498A 1998-12-22 1998-12-22 Polishing equipment Expired - Fee Related JP3628193B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP36503498A JP3628193B2 (en) 1998-12-22 1998-12-22 Polishing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36503498A JP3628193B2 (en) 1998-12-22 1998-12-22 Polishing equipment

Publications (2)

Publication Number Publication Date
JP2000190203A true JP2000190203A (en) 2000-07-11
JP3628193B2 JP3628193B2 (en) 2005-03-09

Family

ID=18483277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36503498A Expired - Fee Related JP3628193B2 (en) 1998-12-22 1998-12-22 Polishing equipment

Country Status (1)

Country Link
JP (1) JP3628193B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6565424B2 (en) 2000-05-26 2003-05-20 Hitachi, Ltd. Method and apparatus for planarizing semiconductor device
WO2006098150A1 (en) * 2005-03-14 2006-09-21 Shin-Etsu Handotai Co., Ltd. Polishing head for semiconductor wafer, polishing apparatus and polishing method
WO2011102078A1 (en) * 2010-02-19 2011-08-25 信越半導体株式会社 Abrasive head and abrading device
CN109605209A (en) * 2018-12-06 2019-04-12 南京航空航天大学 Ionic polymer metal complex membrane surface directional coarsening device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6565424B2 (en) 2000-05-26 2003-05-20 Hitachi, Ltd. Method and apparatus for planarizing semiconductor device
WO2006098150A1 (en) * 2005-03-14 2006-09-21 Shin-Etsu Handotai Co., Ltd. Polishing head for semiconductor wafer, polishing apparatus and polishing method
JP2006253560A (en) * 2005-03-14 2006-09-21 Shin Etsu Handotai Co Ltd Polishing head, polishing device, and polishing method for semiconductor wafer
US7740521B2 (en) 2005-03-14 2010-06-22 Shin-Etsu-Handotai Co., Ltd. Polishing head, polishing apparatus and polishing method for semiconductor wafer
KR101199888B1 (en) * 2005-03-14 2012-11-09 신에쯔 한도타이 가부시키가이샤 Polishing Head for Semiconductor Wafer, Polishing Apparatus and Polishing Method
WO2011102078A1 (en) * 2010-02-19 2011-08-25 信越半導体株式会社 Abrasive head and abrading device
JP2011167819A (en) * 2010-02-19 2011-09-01 Shin Etsu Handotai Co Ltd Polishing head and polishing device
US9278425B2 (en) 2010-02-19 2016-03-08 Shin-Etsu Handotai Co., Ltd. Polishing head and polishing apparatus
DE112011100598B4 (en) 2010-02-19 2023-08-03 Shin-Etsu Handotai Co., Ltd. Polishing head and polishing device
CN109605209A (en) * 2018-12-06 2019-04-12 南京航空航天大学 Ionic polymer metal complex membrane surface directional coarsening device

Also Published As

Publication number Publication date
JP3628193B2 (en) 2005-03-09

Similar Documents

Publication Publication Date Title
US6764392B2 (en) Wafer polishing method and wafer polishing device
US4897966A (en) Polishing apparatus
WO2007013619A1 (en) Sample holder, sample suction apparatus using such sample holder and sample processing method using such sample suction apparatus
JPH11262857A (en) Polishing device for semiconductor wafer
JP2000190203A (en) Polishing device
CN115673908B (en) Wafer pressure head in semiconductor substrate polishing equipment and design method thereof
JP4793680B2 (en) Semiconductor wafer polishing method
JP2004311506A (en) Wafer polishing device, its polishing head, and method of polishing wafer
JPH07130689A (en) Grinding device of semiconductor substrate
JP3575944B2 (en) Polishing method, polishing apparatus, and method of manufacturing semiconductor integrated circuit device
JP4307674B2 (en) Wafer polishing equipment
CN109414799B (en) Double-side grinding device
JPH11170169A (en) Manufacturing method for semiconductor wafer and its device
US6638146B2 (en) Retention plate for polishing semiconductor substrate
US20090036030A1 (en) Polishing head and chemical mechanical polishing process using the same
CN220145583U (en) Wafer polishing partial pressure back cushion device
JP2001232553A (en) Wafer polishing device
JP2003529455A (en) Wafer polishing method
JP2004209613A (en) Work retaining mechanism for single-side polishing device
JPH10146755A (en) Workpiece holding back film
JP2000015558A (en) Polishing device
JPH08139165A (en) Wafer sticking device
JP2575674B2 (en) Polishing equipment
JP3699950B2 (en) Wafer polisher
JP2671857B2 (en) Wafer polishing equipment

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040713

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040727

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040924

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20041207

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20041207

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071217

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071217

Year of fee payment: 3

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071217

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081217

Year of fee payment: 4

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081217

Year of fee payment: 4

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081217

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091217

Year of fee payment: 5

LAPS Cancellation because of no payment of annual fees