JP2000188406A - Silicon carbide schottky barrier diode and its manufacture - Google Patents
Silicon carbide schottky barrier diode and its manufactureInfo
- Publication number
- JP2000188406A JP2000188406A JP10365929A JP36592998A JP2000188406A JP 2000188406 A JP2000188406 A JP 2000188406A JP 10365929 A JP10365929 A JP 10365929A JP 36592998 A JP36592998 A JP 36592998A JP 2000188406 A JP2000188406 A JP 2000188406A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- electrode
- schottky
- schottky electrode
- barrier diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 42
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 230000004888 barrier function Effects 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000002344 surface layer Substances 0.000 claims abstract description 8
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- -1 aluminum ions Chemical class 0.000 abstract description 2
- 238000000137 annealing Methods 0.000 abstract description 2
- 238000002513 implantation Methods 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 230000004913 activation Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910000953 kanthal Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、炭化けい素（以下
ＳｉＣと記す）を用いたショットキーバリアダイオード
およびその製造方法に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a Schottky barrier diode using silicon carbide (hereinafter referred to as SiC) and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】高周波、大電力の制御を目的として、け
い素（以下Ｓｉと記す）を用いた電力用半導体素子（以
下パワーデバイスと称する）では、各種の工夫により高
性能化が進められている。しかし、シリコン材料による
パワーデバイスでは、理論的な限界に近づいてきている
ことと、パワーデバイスは高温や放射線等の存在下で使
用されることもあり、そのような条件下ではＳｉデバイ
スは使用できないことから、Ｓｉに代わる新しい材料の
適用が検討されている。2. Description of the Related Art For the purpose of controlling high frequency and high power, a power semiconductor device (hereinafter referred to as a power device) using silicon (hereinafter referred to as Si) has been improved in performance by various means. I have. However, in the case of a power device using a silicon material, the theoretical limit is approaching, and the power device may be used in the presence of high temperature, radiation, etc., and under such conditions, the Si device cannot be used. Therefore, application of a new material instead of Si is being studied.
【０００３】ＳｉＣは広い禁制帯幅（４Ｈ型で３．２６
ｅＶ、６Ｈ型で３．０２ｅＶ）をもつため、高温での電
気伝導度の制御性に優れ、動作上限温度を高くできる。
またＳｉより約１桁高い絶縁破壊電圧をもつため、厚さ
を薄くでき、定常状態におけるパワーロスを低減でき、
また一方では高耐圧素子への適用が可能である。さら
に、ＳｉＣはＳｉの約２倍の電子飽和ドリフト速度をも
つので、高周波大電力制御にも適する。[0003] SiC has a wide bandgap (3.26 for 4H type).
(eV, 3.02 eV for 6H type), the controllability of electric conductivity at high temperature is excellent, and the upper limit operating temperature can be increased.
In addition, since it has a breakdown voltage about one order higher than Si, the thickness can be reduced, and power loss in a steady state can be reduced.
On the other hand, application to a high breakdown voltage element is possible. Further, since SiC has an electron saturation drift speed about twice as high as that of Si, it is also suitable for high-frequency high-power control.
【０００４】このようなＳｉＣの物性を活かしたパワー
デバイスのひとつにショットキーバリアダイオードがあ
る。ショッキーバリアダイオードは、ｐｎ接合ダイオー
ドと比較して、順方向の電圧降下が小さく、スイッチン
グ速度が速い。しかしながら、逆方向耐圧は、ｐｎ接合
ダイオードと比較して低く、Ｓｉショットキーバリアダ
イオードでは数１０Ｖ程度である。このため、Ｓｉショ
ットキーバリアダイオードは、主にコンピュータ用の駆
動電源など低電圧機器に使用されていた。[0004] A Schottky barrier diode is one of the power devices utilizing the physical properties of SiC. A Schottky barrier diode has a smaller forward voltage drop and a higher switching speed than a pn junction diode. However, the reverse breakdown voltage is lower than that of a pn junction diode, and is about several tens of volts for a Si Schottky barrier diode. For this reason, Si Schottky barrier diodes have been mainly used for low-voltage devices such as drive power supplies for computers.
【０００５】[0005]
【発明が解決しようとする課題】しかし、Ｓｉの代わり
にＳｉＣ結晶を用いてショッキーバリアダイオードを作
成すれば、その高い絶縁破壊電界強度により、逆方向耐
圧を高くすることができ、ショッキーバリアダイオード
をパワーテバイスとして使用することができるようにな
ると期待される。しかし、これまで試作されたＳｉＣシ
ョッキーバリアダイオードでは、逆方向絶縁耐圧が１０
０Ｖ程度であり、これを高めるための様々な工夫がなさ
れている。However, if a Schottky barrier diode is formed by using a SiC crystal instead of Si, the reverse breakdown voltage can be increased due to the high breakdown electric field strength. It is expected that it can be used as a power device. However, the SiC Schottky barrier diode prototyped so far has a reverse breakdown voltage of 10%.
It is about 0 V, and various measures have been taken to increase this.
【０００６】例えば、ｎ型エピタキシャルウェハを用い
たショッキーバリアダイオードのショットキー電極周辺
の表面層に、ほう素イオンを１×１０15ｃｍ-2のドーズ
量でイオン注入して、逆導電型のガードリングを形成す
ることににより、電極の端部の高電界を緩和する方法
で、高耐圧化を図った例が報告されている［A.Itoh, IE
EE, Electron Device Lett., 17(3) p.139 (1996)参
照］。For example, boron ions are implanted into a surface layer around a Schottky electrode of a Schottky barrier diode using an n-type epitaxial wafer at a dose of 1 × 10 15 cm −2 to form a reverse conductive type guard. An example has been reported in which a ring is formed to reduce the high electric field at the end of the electrode to increase the withstand voltage [A. Itoh, IE
EE, Electron Device Lett., 17 (3) p.139 (1996)].
【０００７】ＳｉＣショッキーバリアダイオードの破壊
は、主に電極端部で発生することが多かった。これは、
ショッキー電極の端部では、電極中央部と比較して空乏
層の広がりが小さく、局所的に高電界領域ができるため
である。このような状況に鑑み本発明の目的は、逆方向
耐圧が高く、しかも製造の容易なＳｉＣショッキーバリ
アダイオードおよびその製造方法を提供することにあ
る。[0007] Destruction of the SiC Schottky barrier diode often occurs mainly at the end of the electrode. this is,
This is because the depletion layer has a smaller spread at the end of the Shocky electrode than at the center of the electrode, and a high electric field region is locally formed. In view of such a situation, an object of the present invention is to provide a SiC Schottky barrier diode having a high reverse breakdown voltage and easy manufacture, and a method of manufacturing the same.
【０００８】[0008]
【課題を解決するための手段】上記課題解決のため本発
明は、炭化けい素結晶と、その表面に接触してショット
キー接合を形成するショットキー電極と、表面の別の部
分にオーミックな接触をするオーミック電極とからなる
炭化けい素ショットキーバリアダイオードにおいて、炭
化けい素結晶のショットキー電極の設けられる部分の表
面層に、ショットキー電極の端部を含むリング状の同じ
導電型の低濃度領域を有するものとする。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a silicon carbide crystal, a Schottky electrode which contacts a surface thereof to form a Schottky junction, and an ohmic contact with another portion of the surface. In a silicon carbide Schottky barrier diode comprising an ohmic electrode, a ring-shaped low-concentration of the same conductivity type including the end of the Schottky electrode is provided on the surface layer of the portion where the Schottky electrode of silicon carbide crystal is provided. It has an area.
【０００９】そのようにすると、逆バイアス時にショッ
トキー電極端部下の空乏層幅が広がり、電界を緩和する
ことができる。そのような炭化けい素ショットキーバリ
アダイオードの製造方法としては、炭化けい素結晶と異
なる導電型のイオンを注入し、熱処理することにより低
濃度領域を形成するものとする。In this case, the width of the depletion layer below the end of the Schottky electrode at the time of reverse bias is widened, and the electric field can be reduced. As a method of manufacturing such a silicon carbide Schottky barrier diode, a low concentration region is formed by implanting ions of a conductivity type different from that of the silicon carbide crystal and performing heat treatment.
【００１０】そのような方法で、確実にショットキー電
極の端部を含むようなリング状の低濃度領域を形成する
ことができる。特に、熱処理温度を１３００℃以下とす
れば、ＳｉＣ表面の凹凸の発生を抑えることができる。By such a method, a ring-shaped low-concentration region including the end of the Schottky electrode can be reliably formed. In particular, when the heat treatment temperature is set to 1300 ° C. or less, the occurrence of irregularities on the SiC surface can be suppressed.
【００１１】[0011]
【発明の実施の形態】以下図面を参照しながら本発明の
実施例を説明する。 ［実施例］図１は、本発明にかかるＳｉＣショットキー
ダイオードの断面図である。図において、１は高不純物
濃度のｎ+ サブストレート、２は低不純物濃度のｎエピ
タキシャル層、３は更に低不純物濃度の低濃度領域、４
はニッケル（Ｎｉ）のショットキー電極、６はニッケル
（Ｎｉ）のオーミック電極である。各層のディメンショ
ンは例えば、ＳｉＣ基板１の不純物濃度は５×１０18ｃ
ｍ-3、厚さ３００μｍ、エピタキシャル層２の不純物濃
度は１×１０16ｃｍ-3、厚さ１０μｍ、低濃度領域３の
不純物濃度は約５×１０15ｃｍ-3、幅１００μｍであ
る。ショットキー電極４、オーミック電極６の厚さはと
もに２００ｎｍとした。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a SiC Schottky diode according to the present invention. In the drawing, 1 is an n + substrate having a high impurity concentration, 2 is an n epitaxial layer having a low impurity concentration, 3 is a low concentration region having a further low impurity concentration, 4
Is a nickel (Ni) Schottky electrode, and 6 is a nickel (Ni) ohmic electrode. The dimension of each layer is, for example, the impurity concentration of the SiC substrate 1 is 5 × 10 18 c
m −3 , thickness 300 μm, impurity concentration of epitaxial layer 2 is 1 × 10 16 cm −3 , thickness 10 μm, low concentration region 3 has an impurity concentration of about 5 × 10 15 cm −3 , and width 100 μm. The thickness of both the Schottky electrode 4 and the ohmic electrode 6 was 200 nm.
【００１２】以下このダイオードの作製方法を述べる。
ＳｉＣウェハとして低抵抗の４Ｈ型ＳｉＣ単結晶のサブ
ストレート１上にｎエピタキシャル層２を成長させたエ
ピタキシャルウェハを使用した。そのｎエピタキシャル
層２の表面層に、最大１８０ｋｅＶの加速電圧でアルミ
ニウム（Ａｌ）イオンを０．５μｍ程度の深さまで選択
的に注入する。注入ドーズ量は、５×１０13ｃｍ-2であ
り、その時の不純物濃度は、２×１０18ｃｍ-3となる。
その他のイオン種としてアクセプタとして働くＢ、Ｇａ
を用いることもできる。フォトレジスト等で注入領域を
限定し、低濃度領域３は、外径１．２ｍｍ、内径１．０
ｍｍのリング状である。注入後、常圧Ａｒ雰囲気中で１
３００℃、３０分間のアニールをおこなった。１３００
℃程度では、不純物の電気的活性化率は０．５％以下で
あり、低濃度領域３はｐ型に反転するに至らず、１０15
ｃｍ-3オーダーの低濃度のｎ型となっている。なお、反
転していないことは、同じ条件でイオン注入、熱処理し
た試料でダイオードを作って確認した。Hereinafter, a method for manufacturing this diode will be described.
As the SiC wafer, an epitaxial wafer having an n epitaxial layer 2 grown on a low-resistance 4H-type SiC single crystal substrate 1 was used. Aluminum (Al) ions are selectively implanted into the surface layer of the n-epitaxial layer 2 at a maximum acceleration voltage of 180 keV to a depth of about 0.5 μm. The implantation dose is 5 × 10 13 cm −2 , and the impurity concentration at that time is 2 × 10 18 cm −3 .
B, Ga acting as acceptors as other ion species
Can also be used. The injection region is limited by a photoresist or the like, and the low concentration region 3 has an outer diameter of 1.2 mm and an inner diameter of 1.0 mm.
mm ring shape. After the injection, 1 at normal pressure Ar atmosphere
Annealing was performed at 300 ° C. for 30 minutes. 1300
In order ° C., the electrical activation ratio of impurities is 0.5% or less, the low density region 3 is not enough to be inverted to p-type, 10 15
It is an n-type with a low concentration of the order of cm -3 . In addition, it was confirmed that the diode was not inverted by fabricating a diode using a sample that had been subjected to ion implantation and heat treatment under the same conditions.
【００１３】サブストレート１の裏面にＮｉをスパッタ
成膜した後、１０００℃、５分間の熱処理によりオーミ
ック電極６を形成する。その後エピタキシャル層２の表
面に、Ｎｉをスパッタ成膜し、ショットキー電極４とし
た。ショットキー電極４の直径は、１．１ｍｍであり、
ショットキー電極４の端が低濃度領域３内に止まるよう
にした。その結果、低濃度領域３を形成しない場合では
平均約３００Ｖであった逆方向破壊電圧が、１０００Ｖ
以上と向上した。After Ni is formed on the back surface of the substrate 1 by sputtering, an ohmic electrode 6 is formed by heat treatment at 1000 ° C. for 5 minutes. Thereafter, Ni was formed on the surface of the epitaxial layer 2 by sputtering to form a Schottky electrode 4. The diameter of the Schottky electrode 4 is 1.1 mm,
The end of the Schottky electrode 4 was stopped in the low concentration region 3. As a result, the reverse breakdown voltage, which was about 300 V on average when the low concentration region 3 was not formed, was changed to 1000 V
It improved with the above.
【００１４】図１の構造とすることにより、逆電圧バイ
アス時の空乏層５が、ショットキー電極４の端部近傍に
おいても十分広がるようになり、その結果逆方向耐圧を
向上させることができたと考えられる。しかも先に述べ
た逆導電型のガードリングを形成する場合より一桁以上
低いドーズ量ですむので、工程時間が短縮できる利点が
ある。また、逆導電型のガードリングを形成する場合の
ドーズ量によって、イオン注入部に発生する結晶欠陥は
かなり多いと考えられるが、ドーズ量を低くすることに
より、そのような結晶欠陥が及ぼす特性への悪影響を免
れることができる。According to the structure shown in FIG. 1, the depletion layer 5 at the time of reverse voltage bias becomes sufficiently wide even near the end of the Schottky electrode 4, and as a result, the reverse breakdown voltage can be improved. Conceivable. In addition, the dose can be reduced by at least one order of magnitude compared to the case of forming the above-described guard ring of the opposite conductivity type, so that there is an advantage that the process time can be reduced. In addition, it is considered that crystal defects generated in the ion-implanted portion are considerably large depending on the dose in forming the guard ring of the opposite conductivity type. However, by lowering the dose, characteristics caused by such crystal defects are reduced. Can be avoided.
【００１５】熱処理温度を高くすれば、注入された不純
物の活性化率が増すので、Ａｌのドーズ量を少なくし
て、熱処理温度を高くし、同様の低濃度領域を形成する
こともできる。しかしその場合はＳｉＣ表面に凹凸が発
生しやすいので、本発明のように熱処理の低温化によ
り、ＳｉＣ表面の凹凸の発生を防ぐことができる。ま
た、酸化膜がＳｉＣ上に成膜された場合でもその酸化膜
によるＳｉＣ露出部のエッチングを防止することができ
る。特に、１３００℃以下の熱処理であれば、発熱線と
してカンタル線を用い、雰囲気管として石英管を用いた
普及型の熱処理炉で加熱でき、タングステン炉のような
特別の高温炉を用いる必要がない。When the heat treatment temperature is increased, the activation rate of the implanted impurities is increased. Therefore, the dose of Al can be reduced, the heat treatment temperature can be increased, and a similar low concentration region can be formed. However, in this case, irregularities are likely to be generated on the SiC surface. Therefore, the lowering of the heat treatment can prevent the irregularities on the SiC surface as in the present invention. Further, even when an oxide film is formed on SiC, it is possible to prevent the SiC exposed portion from being etched by the oxide film. In particular, if the heat treatment is performed at a temperature of 1300 ° C. or less, heating can be performed by a popular heat treatment furnace using a Kanthal wire as a heating wire and a quartz tube as an atmosphere tube, and there is no need to use a special high-temperature furnace such as a tungsten furnace. .
【００１６】以上の実施例では４Ｈ−ＳｉＣのＳｉ面上
に中間層を形成する例を述べたが、本発明の方法は４Ｈ
−ＳｉＣのＣ面や６Ｈ−ＳｉＣのＳｉ、Ｃ面にも適用で
きると考えられる。In the above embodiment, an example in which an intermediate layer is formed on the Si surface of 4H—SiC has been described.
It is considered that the present invention can be applied to the C-plane of -SiC and the Si and C-planes of 6H-SiC.
【００１７】[0017]
【発明の効果】以上説明したように本発明によれば炭化
けい素ショットキーバリアダイオードにおいて、炭化け
い素結晶の表面層に、ショットキー電極の端部を含むリ
ング状の同じ導電型の低濃度領域を設けることにより、
電極端部の下の空乏層幅を広げ、電界集中を軽減して逆
方向絶縁耐圧を向上させることができた。As described above, according to the present invention, in a silicon carbide Schottky barrier diode, a ring-shaped low-concentration of the same conductivity type including an end of a Schottky electrode is provided on a surface layer of a silicon carbide crystal. By providing an area,
The width of the depletion layer below the electrode end was widened, the electric field concentration was reduced, and the reverse breakdown voltage was improved.
【００１８】その製造方法としては、炭化けい素結晶と
異なる導電型のイオンを注入し、熱処理することにより
低濃度領域を容易に形成できることを示した。本発明
は、Ｓｉショットキーダイオードを超えたパワーデバイ
スとしてのＳｉＣショットキーダイオードの発展、普及
に極めて重要な貢献をなすものである。As a manufacturing method, it has been shown that a low concentration region can be easily formed by implanting ions of a conductivity type different from that of the silicon carbide crystal and performing heat treatment. The present invention makes a very important contribution to the development and spread of SiC Schottky diodes as power devices beyond Si Schottky diodes.
【図１】本発明の実施例のショットキーバリアダイオー
ドの断面図FIG. 1 is a cross-sectional view of a Schottky barrier diode according to an embodiment of the present invention.
１ ｎ+ サブストレート ２ ｎエピタキシャル層 ３ 低濃度領域 ４ ショットキー電極 ５ 空乏層 ６ オーミック電極Reference Signs List 1 n + substrate 2 n epitaxial layer 3 low concentration region 4 Schottky electrode 5 depletion layer 6 ohmic electrode
Claims (3)
ョットキー接合を形成するショットキー電極と、表面の
別の部分にオーミックな接触をするオーミック電極とか
らなる炭化けい素ショットキーバリアダイオードにおい
て、炭化けい素結晶のショットキー電極の設けられる部
分の表面層に、ショットキー電極の端部を含むリング状
の同じ導電型の低濃度領域を有することを特徴とする炭
化けい素ショットキーバリアダイオード。1. A silicon carbide Schottky barrier comprising a silicon carbide crystal, a Schottky electrode in contact with the surface thereof to form a Schottky junction, and an ohmic electrode in ohmic contact with another part of the surface. A diode having a ring-shaped low-concentration region of the same conductivity type including an end of the Schottky electrode in a surface layer of a portion where the Schottky electrode of the silicon carbide crystal is provided; Barrier diode.
ョットキー接合を形成するショットキー電極と、表面の
別の部分にオーミックな接触をするオーミック電極と、
炭化けい素結晶のショットキー電極の設けられる部分の
表面層にショットキー電極の端部を含んで設けられたリ
ング状の同じ導電型の低濃度領域を有する炭化けい素シ
ョットキーバリアダイオードの製造方法において、炭化
けい素結晶と異なる導電型のイオンを注入し、熱処理す
ることにより前記の低濃度領域を形成することを特徴と
する炭化けい素ショットキーバリアダイオードの製造方
法。2. A silicon carbide crystal, a Schottky electrode in contact with the surface thereof to form a Schottky junction, and an ohmic electrode in ohmic contact with another part of the surface.
Method for manufacturing silicon carbide Schottky barrier diode having ring-shaped low-concentration region of same conductivity type provided in a surface layer of a portion of silicon carbide crystal where Schottky electrode is provided including an end of Schottky electrode 3. The method of manufacturing a silicon carbide Schottky barrier diode according to claim 1, wherein said low-concentration region is formed by implanting ions of a conductivity type different from that of the silicon carbide crystal and performing heat treatment.
特徴とする請求項２に記載の炭化けい素ショットキーバ
リアダイオードの製造方法。3. The method for manufacturing a silicon carbide Schottky barrier diode according to claim 2, wherein the heat treatment temperature is 1300 ° C. or less.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36592998A JP3635956B2 (en) | 1998-12-24 | 1998-12-24 | Method for manufacturing silicon carbide Schottky barrier diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36592998A JP3635956B2 (en) | 1998-12-24 | 1998-12-24 | Method for manufacturing silicon carbide Schottky barrier diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000188406A true JP2000188406A (en) | 2000-07-04 |
| JP3635956B2 JP3635956B2 (en) | 2005-04-06 |
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ID=18485484
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36592998A Expired - Fee Related JP3635956B2 (en) | 1998-12-24 | 1998-12-24 | Method for manufacturing silicon carbide Schottky barrier diode |
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|---|---|---|---|---|
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