JP2000174198A - Module type semiconductor device and power conversion device using the same - Google Patents
Module type semiconductor device and power conversion device using the sameInfo
- Publication number
- JP2000174198A JP2000174198A JP34271698A JP34271698A JP2000174198A JP 2000174198 A JP2000174198 A JP 2000174198A JP 34271698 A JP34271698 A JP 34271698A JP 34271698 A JP34271698 A JP 34271698A JP 2000174198 A JP2000174198 A JP 2000174198A
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- Prior art keywords
- semiconductor device
- insulating
- type semiconductor
- plate
- heat
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、モジュール型半導
体装置及びこれを用いた電力変換装置に係り、特に、熱
抵抗を低減し得るモジュール型半導体装置及びこれを用
いた電力変換装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a modular semiconductor device and a power converter using the same, and more particularly, to a modular semiconductor device capable of reducing thermal resistance and a power converter using the same.
【０００２】[0002]
【従来の技術】一般に、ＩＧＢＴ(insulated gate bipo
lar transistor) 並びにＩＥＧＴ(injection enhanced
gate transistor)などの半導体スイッチング素子は、保
護用のケースに収容されてモジュール型半導体装置とし
て用いられる。また、この種のモジュール型半導体装置
は、放熱用の冷却器などに取付けられて電力変換装置と
して用いられる。2. Description of the Related Art Generally, an IGBT (insulated gate bipo) is used.
lar transistor) and IEGT (injection enhanced)
A semiconductor switching element such as a gate transistor is housed in a protective case and used as a modular semiconductor device. In addition, this type of module type semiconductor device is used as a power converter by being attached to a cooler for heat radiation or the like.
【０００３】図４は一般的な片側冷却タイプのモジュー
ル型半導体装置とこれを用いた電力変換装置の断面構成
を示す模式図である。このモジュール型半導体装置は、
周囲部を残して両面に金属薄膜層１，２が付けられた絶
縁基板３の上面の金属薄膜層１上に複数のＳｉチップ
（半導体素子）４がはんだ付けされ、各Ｓｉチップ４が
互いにボンディングワイヤ５（又は金属薄板）を介して
電気的に接続されている。FIG. 4 is a schematic diagram showing a cross-sectional configuration of a general single-sided cooling type modular semiconductor device and a power conversion device using the same. This modular semiconductor device
A plurality of Si chips (semiconductor elements) 4 are soldered on the metal thin film layer 1 on the upper surface of the insulating substrate 3 having the metal thin film layers 1 and 2 attached to both surfaces except for the peripheral portion, and the respective Si chips 4 are bonded to each other. They are electrically connected via wires 5 (or thin metal plates).
【０００４】ここで、金属薄膜層１，２はＣｕ（又はＡ
ｌでもよい）が使用され、Ｓｉチップ側がＳｉチップ４
の機能に対応してパターニングされている。絶縁基板３
は、通常、窒化アルミニウム（ＡｌＮ）又は酸化アルミ
ニウム（Ａｌ２Ｏ３）等のセラミックスが使用され、そ
の厚さが定格電圧から余裕をみた絶縁耐圧に対応して設
定されている。具体的には絶縁基板３は、ＡｌＮ基板の
両面にＣｕ板を張合せて高熱伝導性を持たせた構造とな
っている。[0004] Here, the metal thin film layers 1 and 2 are made of Cu (or A).
1 may be used), and the Si chip side is the Si chip 4
Is patterned in accordance with the function of Insulating substrate 3
Usually, ceramics such as aluminum nitride (AlN) or aluminum oxide (Al 2 O 3 ) are used, and the thickness thereof is set corresponding to the dielectric strength with a margin from the rated voltage. Specifically, the insulating substrate 3 has a structure in which Cu plates are bonded to both surfaces of an AlN substrate to have high thermal conductivity.
【０００５】絶縁基板３の底面は、金属薄膜層２を介し
て金属製の放熱板６の中央部にはんだ付けされ、放熱板
６の周囲部上には絶縁基板３の周囲全体を囲うように外
囲器７が取付けられている。放熱板６は、ここではＣｕ
が使用される。[0005] The bottom surface of the insulating substrate 3 is soldered to the central portion of the metal heat radiating plate 6 via the metal thin film layer 2, and the peripheral portion of the heat radiating plate 6 surrounds the entire periphery of the insulating substrate 3. An envelope 7 is attached. The radiator plate 6 is made of Cu
Is used.
【０００６】また、外囲器７の内側上部には、外部端子
用リード線８及び開口部（図示せず）を有する端子保持
部９が外囲器７に蓋をするように取付けられている。な
お、外部端子用リード線８は、外囲器７内のＳｉチップ
４と外部との間で電気的に導通をとるための部材であ
る。[0006] A terminal holding portion 9 having an external terminal lead wire 8 and an opening (not shown) is attached to the upper inside of the envelope 7 so as to cover the envelope 7. . The external terminal lead wire 8 is a member for establishing electrical continuity between the Si chip 4 in the envelope 7 and the outside.
【０００７】ここで、放熱板６、外囲器７、端子保持部
９で囲まれたモジュール内部には、前述した開口部を介
して絶縁性のＳｉゲル１０が流し込まれ、Ｓｉゲル１０
の硬化の後、開口部が封止部材にて密封されている。Here, an insulating Si gel 10 is poured into the module surrounded by the heat radiating plate 6, the envelope 7, and the terminal holding portion 9 through the above-described opening.
After curing, the opening is sealed with a sealing member.
【０００８】以上のようなモジュール型半導体装置は、
熱伝導性を有する熱伝導グリース等が放熱板６における
冷却器（ヒートシンク）１１との対向部に塗布された
後、放熱板６の四隅の貫通孔６ａを通してボルト１２に
より冷却器１１に固定される。これにより、電力変換装
置が作成される。The module type semiconductor device as described above is
After heat conductive grease having heat conductivity is applied to a portion of the radiator plate 6 facing the cooler (heat sink) 11, the radiator plate 6 is fixed to the cooler 11 by bolts 12 through through holes 6a at four corners of the radiator plate 6. . Thereby, a power converter is created.
【０００９】モジュール型半導体装置内のＳｉチップ４
で発生した熱は、絶縁基板３並びに放熱板６を通って冷
却器１１に流出する。このように、従来のモジュール型
半導体装置は、Ｓｉチップ３の片面のみを冷却する。The Si chip 4 in the module type semiconductor device
Is discharged to the cooler 11 through the insulating substrate 3 and the heat sink 6. Thus, in the conventional modular semiconductor device, only one surface of the Si chip 3 is cooled.
【００１０】一方、図５は両面冷却タイプのモジュール
型半導体装置を用いた電力変換装置の断面構成を示す模
式図である。図示するように、Ｓｉチップ４の下側は、
図４に示した装置と同様に構成されている。Ｓｉチップ
４の上面は、配線部材１３が接合されている。配線部材
１３の上側は、絶縁材１４及び補助放熱板１５が順次接
合されている。補助放熱板１５と（主）放熱板６との間
は、絶縁材１４、Ｓｉチップ４及び絶縁基板３を囲むよ
うに外囲器７が取付けられている。FIG. 5 is a schematic diagram showing a cross-sectional structure of a power converter using a double-sided cooling type modular semiconductor device. As shown in the figure, the lower side of the Si chip 4
It has the same configuration as the device shown in FIG. The wiring member 13 is joined to the upper surface of the Si chip 4. On the upper side of the wiring member 13, an insulating material 14 and an auxiliary heat radiating plate 15 are sequentially joined. An envelope 7 is attached between the auxiliary heat sink 15 and the (main) heat sink 6 so as to surround the insulating material 14, the Si chip 4, and the insulating substrate 3.
【００１１】このような電力変換装置は、片面冷却タイ
プと両面冷却タイプのいずれも大容量化が図られてお
り、大容量化の観点から、高耐圧化、低熱抵抗化、機械
的信頼性の向上といったことが要求されている。Such a power converter has a large capacity in both a single-sided cooling type and a double-sided cooling type. From the viewpoint of a large capacity, a high withstand voltage, a low thermal resistance, and a high mechanical reliability are required. Improvement is required.
【００１２】[0012]
【発明が解決しようとする課題】しかしながら、以上の
ようなモジュール型半導体装置及び電力変換装置では、
高耐圧化、低熱抵抗化、機械的信頼性向上といった要求
が互いに相反する内容であるため、大容量化の実現が困
難となっている。例えば図４に示す構成の場合、高耐圧
化のためには、絶縁基板３中のセラミックスの厚さを増
大する必要があるが、この場合、セラミックスの厚さに
比例して熱抵抗を増大させてしまう。However, in the module type semiconductor device and the power converter as described above,
Since the demands for higher breakdown voltage, lower thermal resistance, and improved mechanical reliability conflict with each other, it is difficult to achieve a large capacity. For example, in the case of the configuration shown in FIG. 4, it is necessary to increase the thickness of the ceramic in the insulating substrate 3 in order to increase the breakdown voltage. In this case, the thermal resistance is increased in proportion to the thickness of the ceramic. Would.
【００１３】また、セラミックスの厚さの増大に併せて
放熱板６の厚みも増大させる必要がある。放熱板６の厚
みを増大させない場合、セラミックスとＣｕなどを用い
た放熱板６との熱膨張差により、両者のはんだ付け時に
そりを生じ、セラミックス表面の引張応力によりセラミ
ックスにクラックを生じ易くなり、機械的信頼性を低下
させるからである。しかし、放熱板６の厚さを増大させ
ると、放熱板６の厚さに比例してさらに熱抵抗を増大さ
せてしまう。また、モジュール型半導体装置は、放熱板
６が冷却器１１にボルト１２で固定されるが、最も冷却
すべきＳｉチップ４直下において、放熱板６と冷却器１
１との間に数ミクロンの隙間が生じて接触熱抵抗が大き
くなり、十分な熱伝導が確保されない。In addition, it is necessary to increase the thickness of the heat sink 6 in accordance with the increase in the thickness of the ceramics. If the thickness of the heat radiating plate 6 is not increased, warpage occurs at the time of soldering due to a difference in thermal expansion between the ceramic and the heat radiating plate 6 using Cu or the like, and cracks easily occur in the ceramic due to tensile stress on the ceramic surface. This is because mechanical reliability is reduced. However, when the thickness of the heat sink 6 is increased, the thermal resistance is further increased in proportion to the thickness of the heat sink 6. In the module type semiconductor device, the radiator plate 6 is fixed to the cooler 11 with bolts 12, but the radiator plate 6 and the cooler 1 are located immediately below the Si chip 4 to be cooled most.
A gap of several microns is generated between the first and second electrodes, and the contact thermal resistance increases, and sufficient heat conduction cannot be secured.
【００１４】ここで、接触熱抵抗を低減させる観点か
ら、Ｓｉチップ４直下の放熱板６表面に膨らみを持たせ
る方式が考えられる。しかし、この方式は、ボルト締め
時に絶縁基板３やＳｉチップ４に曲げ応力が加わるた
め、クラックを生じ易くなり、機械的信頼性を低下させ
てしまう。Here, from the viewpoint of reducing the contact thermal resistance, a system in which the surface of the heat radiating plate 6 directly below the Si chip 4 has a swelling is considered. However, in this method, a bending stress is applied to the insulating substrate 3 and the Si chip 4 at the time of bolting, so that cracks are easily generated, and mechanical reliability is reduced.
【００１５】なお、放熱板６と冷却器１１との間には熱
伝導グリースが存在するが、熱伝導グリースの熱伝導率
が金属と比べて非常に小さいので、接触熱抵抗の低減が
不十分となっている。Although heat conductive grease exists between the heat radiating plate 6 and the cooler 11, the thermal conductivity of the heat conductive grease is much smaller than that of metal, so that the contact thermal resistance is not sufficiently reduced. It has become.
【００１６】一方、両面冷却タイプの図５に示す構成
は、外囲器７と、（主）放熱板６から補助放熱板１５ま
で接合された部材３，４，１３，１４との熱膨張差並び
に接合された各部材６，３，４，１３，１４，１５間の
熱膨張差により、組立時や使用時に熱応力が発生し易
く、熱応力が過大な場合、Ｓｉチップ４又は絶縁基板３
の破損等が発生する可能性がある。On the other hand, the structure shown in FIG. 5 of the double-sided cooling type has a difference in thermal expansion between the envelope 7 and the members 3, 4, 13, and 14 joined from the (main) heat radiating plate 6 to the auxiliary heat radiating plate 15. In addition, due to the difference in thermal expansion between the joined members 6, 3, 4, 13, 14, and 15, thermal stress is likely to be generated at the time of assembly or use, and when the thermal stress is excessive, the Si chip 4 or the insulating substrate 3
May be damaged.
【００１７】まとめると、モジュール型半導体装置及び
電力変換装置は、高耐圧化、低熱抵抗化、機械的信頼性
の向上といった相反する要求を満たせないため、大容量
化の実現が困難となっている。In summary, the modular semiconductor device and the power converter cannot satisfy the contradictory requirements such as high withstand voltage, low thermal resistance, and improvement in mechanical reliability, so that it is difficult to realize a large capacity. .
【００１８】本発明は上記実情を考慮してなされたもの
で、耐圧の向上、熱抵抗の低減及び機械的信頼性の向上
により、大容量化を実現し得るモジュール型半導体装置
及びこれを用いた電力変換装置を提供することを目的と
する。The present invention has been made in view of the above circumstances, and uses a modular semiconductor device capable of realizing a large capacity by improving withstand voltage, reducing thermal resistance and improving mechanical reliability. An object is to provide a power converter.
【００１９】[0019]
【課題を解決するための手段】請求項１に対応する発明
は、主放熱板と、前記主放熱板上に接合され、両面に導
電性薄膜を有する高熱伝導性の絶縁基板と、前記絶縁基
板における前記主放熱板とは反対面の導電性薄膜に接合
された半導体素子と、前記半導体素子に接合された低熱
膨張部材と、前記低熱膨張部材に接合されて前記半導体
素子に電気的に接続された薄板状の配線部材と、前記低
熱膨脹部材に対向して前記配線部材上に配置された絶縁
部材と、前記絶縁部材上に配置され、前記絶縁部材より
も軟質の軟質部材と、前記絶縁基板を囲うように前記主
放熱板上に設けられた外囲器と、前記軟質部材上に配置
され、前記主放熱板に対向して蓋をするように前記外囲
器に取付けられた補助放熱板と、前記外囲器を貫通して
保持され、前記配線部材に電気的に接続された外部端子
と、前記主放熱板、前記補助放熱板及び前記外囲器で囲
まれた内部に充填される充填部材とを備えたモジュール
型半導体装置である。The invention corresponding to claim 1 comprises a main heat radiating plate, a high heat conductive insulating substrate joined on the main heat radiating plate and having a conductive thin film on both sides, and the insulating substrate. A semiconductor element joined to the conductive thin film on the surface opposite to the main heat sink, a low thermal expansion member joined to the semiconductor element, and electrically connected to the semiconductor element joined to the low thermal expansion member. A thin plate-shaped wiring member, an insulating member disposed on the wiring member facing the low thermal expansion member, a soft member disposed on the insulating member and softer than the insulating member, and the insulating substrate An outer radiator provided on the main radiator plate so as to surround the radiator plate; and an auxiliary radiator plate disposed on the soft member and attached to the outer radiator plate so as to face the main radiator plate and cover it. And being held through the envelope, And an external terminal electrically connected to a member, the main heat radiating plate, a module type semiconductor device and a filling member filled in said enclosed by the auxiliary heat dissipation plate and the envelope.
【００２０】また、請求項２に対応する発明は、請求項
１に対応するモジュール型半導体装置において、前記軟
質部材が前記絶縁部材及び前記補助放熱板の両者に接合
され、前記絶縁部材が前記配線部材上に摺動自在に配置
されているモジュール型半導体装置である。According to a second aspect of the present invention, in the module type semiconductor device according to the first aspect, the soft member is joined to both the insulating member and the auxiliary heat sink, and the insulating member is connected to the wiring. This is a modular semiconductor device slidably disposed on a member.
【００２１】さらに、請求項３に対応する発明は、請求
項１又は請求項２に対応するモジュール型半導体装置に
おいて、前記軟質部材が活性金属ろうを介して前記絶縁
部材に接合されているモジュール型半導体装置である。According to a third aspect of the present invention, in the module type semiconductor device according to the first or second aspect, the soft member is joined to the insulating member via an active metal brazing. It is a semiconductor device.
【００２２】また、請求項４に対応する発明は、請求項
１乃至請求項３のいずれか１項に対応するモジュール型
半導体装置において、前記絶縁部材としては、前記配線
部材側又は前記軟質部材側、あるいはこれら両部材側に
金属板を備えたモジュール型半導体装置である。According to a fourth aspect of the present invention, in the module type semiconductor device according to any one of the first to third aspects, the insulating member includes the wiring member side or the soft member side. Or a module type semiconductor device provided with a metal plate on both of these members.
【００２３】さらに、請求項５に対応する発明は、請求
項１乃至請求項４のいずれか１項に対応するモジュール
型半導体装置において、前記軟質部材としては、Ａｌ又
はＡｌ合金が材料であるモジュール型半導体装置であ
る。According to a fifth aspect of the present invention, there is provided the module type semiconductor device according to any one of the first to fourth aspects, wherein the soft member is made of Al or an Al alloy. Semiconductor device.
【００２４】また、請求項６に対応する発明は、請求項
１乃至請求項５のいずれか１項に対応するモジュール型
半導体装置において、前記主放熱板及び前記補助放熱板
としては、Ｃｕ、Ａｌ、Ｃｕ合金又はＡｌ合金が材料で
あるモジュール型半導体装置である。According to a sixth aspect of the present invention, in the module type semiconductor device according to any one of the first to fifth aspects, the main radiating plate and the auxiliary radiating plate are made of Cu, Al. , A Cu alloy or an Al alloy.
【００２５】さらに、請求項７に対応する発明は、請求
項１乃至請求項６のいずれか１項に対応するモジュール
型半導体装置において、前記低熱膨張部材としては、
Ｗ、Ｍｏ、ＷとＣｕとの複合材料、ＭｏとＣｕとの複合
材料、又はＷとＭｏとＣｕとの複合材料からなるモジュ
ール型半導体装置である。According to a seventh aspect of the present invention, in the module type semiconductor device according to any one of the first to sixth aspects, the low thermal expansion member includes:
A modular semiconductor device made of W, Mo, a composite material of W and Cu, a composite material of Mo and Cu, or a composite material of W, Mo and Cu.
【００２６】また、請求項８に対応する発明は、請求項
１乃至請求項７のいずれか１項に対応するモジュール型
半導体装置において、前記外囲器としては、弾力性及び
絶縁性を有し、少なくとも一部に設けられた応力吸収部
材を備えたモジュール型半導体装置である。According to an eighth aspect of the present invention, in the module type semiconductor device according to any one of the first to seventh aspects, the envelope has elasticity and insulation. , A module-type semiconductor device including a stress absorbing member provided at least partially.
【００２７】さらに、請求項９に対応する発明は、請求
項１乃至請求項８のいずれか１項に対応するモジュール
型半導体装置を用いた電力変換装置において、前記モジ
ュール型半導体装置本体を挟む１対の冷却器と、前記１
対の冷却器を互いに近づけるように圧接するための圧接
部材とを備えた電力変換装置である。According to a ninth aspect of the present invention, there is provided a power conversion device using a module type semiconductor device according to any one of the first to eighth aspects, wherein the module type semiconductor device main body is sandwiched. A pair of coolers;
And a press-contact member for pressing the pair of coolers closer to each other.
【００２８】また、請求項１０に対応する発明は、請求
項１乃至請求項８のいずれか１項に対応するモジュール
型半導体装置を用いた電力変換装置において、ｎ台の前
記モジュール型半導体装置本体を個別に挟む（ｎ＋１）
台の冷却器と、前記（ｎ＋１）台の冷却器のうち、両端
に位置した１対の冷却器を互いに近づけるように圧接す
るための圧接部材とを備えた電力変換装置である。（作
用）従って、請求項１に対応する発明は以上のような手
段を講じたことにより、半導体素子の上面に、この面に
接合された低熱膨張部材を介して配線部材を配置し、さ
らに配線部材上に絶縁部材、軟質部材及び補助放熱板が
積層されている。According to a tenth aspect of the present invention, there is provided a power conversion device using the module type semiconductor device according to any one of the first to eighth aspects, wherein n units of the module type semiconductor device main body are provided. (N + 1)
A power converter comprising: a plurality of coolers; and a press-contact member for pressing a pair of coolers positioned at both ends of the (n + 1) coolers so as to approach each other. (Operation) Therefore, according to the invention corresponding to claim 1, by taking the above means, the wiring member is arranged on the upper surface of the semiconductor element via the low thermal expansion member joined to this surface, and An insulating member, a soft member, and an auxiliary heat sink are laminated on the member.
【００２９】このように、軟質部材が両放熱板間に配置
されたので、両側の放熱板を一対の冷却器で圧接しなが
ら挟み込んで電力変換装置を構成した場合、半導体素子
直上及び直下の位置において放熱板と冷却器が密着して
接触熱抵抗を低減できるので、極めて高い冷却効率を実
現でき、もって、耐圧の向上、熱抵抗の低減及び機械的
信頼性の向上を達成して大容量化を実現させることがで
きる。As described above, since the soft member is arranged between the heat sinks, when the power converter is constituted by sandwiching the heat sinks on both sides while being pressed against each other by a pair of coolers, the position just above and immediately below the semiconductor element can be obtained. The heat sink and the cooler are in close contact with each other, and the contact thermal resistance can be reduced, so that extremely high cooling efficiency can be achieved, thereby increasing the pressure resistance, reducing the thermal resistance and improving the mechanical reliability, and increasing the capacity. Can be realized.
【００３０】また、請求項２に対応する発明は、軟質部
材が絶縁部材及び補助放熱板の両者に接合され、絶縁部
材が配線部材上に摺動自在に配置されているので、請求
項１に対応する作用に加え、絶縁部材／軟質部材間及び
軟質部材／補助放熱板間の熱抵抗を非接合の場合に比
べ、大幅に低減させることができる。According to a second aspect of the present invention, the soft member is joined to both the insulating member and the auxiliary heat sink, and the insulating member is slidably disposed on the wiring member. In addition to the corresponding action, the thermal resistance between the insulating member / soft member and between the soft member / auxiliary heat radiating plate can be significantly reduced as compared with the case of no joining.
【００３１】また、絶縁部材／軟質部材／補助放熱板が
一体化されているため、装置組立て時の作業が容易とな
り、製造コストを低減させることができる。Further, since the insulating member / soft member / auxiliary heat radiating plate are integrated, the work at the time of assembling the device becomes easy, and the manufacturing cost can be reduced.
【００３２】さらに、絶縁部材／配線部材間は非接合に
して摺動自在としたことにより、組立て時の機械的な応
力や稼動時の熱応力が半導体素子及び絶縁基板の面方向
には加わらないので、機械的信頼性を向上させることが
できる。Further, since the insulating member and the wiring member are not joined to each other and are slidable, mechanical stress at the time of assembly and thermal stress at the time of operation are not applied in the surface direction of the semiconductor element and the insulating substrate. Therefore, mechanical reliability can be improved.
【００３３】さらに、請求項３に対応する発明は、軟質
部材が活性金属ろうを介して絶縁部材に接合されている
ので、請求項１又は請求項２に対応する作用に加え、絶
縁部材をセラミックスとし、軟質部材を金属とした場
合、両者の接合を実現させることができる。Further, according to the invention corresponding to claim 3, the soft member is joined to the insulating member via the active metal brazing. Therefore, in addition to the action corresponding to claim 1 or 2, the insulating member is made of ceramics. When the soft member is made of metal, it is possible to realize the joining of both.
【００３４】また、請求項４に対応する発明は、絶縁部
材としては、配線部材側又は軟質部材側、あるいはこれ
ら両部材側に金属板を備えたので、請求項１乃至請求項
３のいずれかに対応する作用に加え、絶縁部材の配線部
材側に金属板を予め設けておくことにより、配線部材と
絶縁部材間の接触熱抵抗を低減でき、一方、絶縁部材の
軟質部材側に金属板を設けることにより、軟質部材との
接合をより容易に行なうことができる。According to a fourth aspect of the present invention, as the insulating member, a metal plate is provided on the wiring member side or on the soft member side or on both of these members. In addition to the action corresponding to the above, by providing a metal plate on the wiring member side of the insulating member in advance, it is possible to reduce the contact thermal resistance between the wiring member and the insulating member, while the metal plate is provided on the soft member side of the insulating member. By providing, the bonding with the soft member can be performed more easily.
【００３５】さらに、請求項５に対応する発明は、軟質
部材としては、Ａｌ又はＡｌ合金が材料であるので、請
求項１乃至請求項４のいずれかの作用に加え、このよう
な軟質の材料を用いることにより、半導体素子や絶縁基
板などを損傷するような過度な圧接力を生ずることな
く、容易且つ確実に、放熱板と冷却器を密着させること
ができる。また、Ａｌ又はＡｌ合金は、高熱伝導性金属
でもあるので、軟質部材自体の熱抵抗を低減させること
ができる。Further, according to the invention corresponding to claim 5, since the soft member is made of Al or an Al alloy, in addition to the function of any one of claims 1 to 4, such a soft material By using the heat sink, the heat sink and the cooler can be easily and surely brought into close contact with each other without excessive pressing force that may damage the semiconductor element and the insulating substrate. Further, since Al or an Al alloy is also a highly heat-conductive metal, the thermal resistance of the soft member itself can be reduced.
【００３６】また、請求項６に対応する発明は、主放熱
板及び補助放熱板としては、Ｃｕ、Ａｌ、Ｃｕ合金又は
Ａｌ合金が材料であるので、請求項１乃至請求項５のい
ずれかに対応する作用に加え、主放熱板及び補助放熱板
が高熱伝導かつ軟質となるので、軟質部材による放熱板
の面垂直方向の圧接力により、各放熱板と各冷却器との
密接を図ることができる。The invention corresponding to claim 6 is characterized in that the main radiator plate and the auxiliary radiator plate are made of Cu, Al, Cu alloy or Al alloy. In addition to the corresponding action, the main radiator plate and the auxiliary radiator plate have high heat conduction and softness, so that each radiator plate and each cooler can be in close contact with each other by the pressing force of the soft member in the direction perpendicular to the surface of the radiator plate. it can.
【００３７】さらに、請求項７に対応する発明は、低熱
膨張部材としては、Ｗ、Ｍｏ、ＷとＣｕとの複合材料、
ＭｏとＣｕとの複合材料、又はＷとＭｏとＣｕとの複合
材料からなるので、請求項１乃至請求項６のいずれかの
作用に加え、半導体素子と配線部材との間の接合部の熱
疲労を軽減させることができる。また、この部分が過渡
的な熱吸収源となり、瞬間的な半導体素子の発熱によっ
て半導体素子が過大に温度上昇して破壊に至る現象を抑
制することができる。Further, the invention according to claim 7 is characterized in that the low thermal expansion member includes W, Mo, a composite material of W and Cu,
7. Since it is made of a composite material of Mo and Cu or a composite material of W, Mo and Cu, in addition to the function of any one of claims 1 to 6, the heat of the joint between the semiconductor element and the wiring member is increased. Fatigue can be reduced. In addition, this portion serves as a transient heat absorption source, and it is possible to suppress a phenomenon that the semiconductor element excessively rises in temperature due to instantaneous heat generation of the semiconductor element and causes destruction.
【００３８】また、請求項８に対応する発明は、外囲器
としては、弾力性及び絶縁性を有し、少なくとも一部に
設けられた応力吸収部材を備えたので、請求項１乃至請
求項７のいずれかに対応する作用に加え、両側から１対
の冷却器で各放熱板を圧接した際に、各放熱板と各冷却
器との間を密着させるのに十分な応力を軟質部材に作用
させることができる。In the invention corresponding to claim 8, the envelope has elasticity and insulation, and includes a stress absorbing member provided at least in part. In addition to the action corresponding to any one of the above items 7, when each radiator plate is pressed against each other by a pair of coolers from both sides, a sufficient stress is applied to the soft member to bring the radiator plate and each cooler into close contact with each other. Can work.
【００３９】さらに、請求項９に対応する発明は、前述
したモジュール型半導体装置を１対の冷却器で挟みつつ
圧接部材で圧接する構成により、請求項１乃至請求項８
のいずれかの作用を奏する電力変換装置を実現すること
ができる。Further, the invention corresponding to claim 9 has a structure in which the above-mentioned module type semiconductor device is pressed by a pressing member while being sandwiched between a pair of coolers.
A power conversion device having any of the functions described above can be realized.
【００４０】また、請求項１０に対応する発明は、ｎ台
のモジュール型半導体装置を（ｎ＋１）台の冷却器で個
別に挟み、圧接部材によって両端の冷却器を圧接するの
で、請求項１乃至請求項８のいずれかの作用に加え、電
力変換装置のコンパクト化を図ることができる。According to a tenth aspect of the present invention, n modular semiconductor devices are individually sandwiched between (n + 1) coolers, and the coolers at both ends are pressed against each other by the press-contact members. In addition to the effect of any one of the eighth aspect, the power converter can be made more compact.
【００４１】[0041]
【発明の実施の形態】以下、本発明の各実施形態につい
て図面を参照して説明する。 （第１の実施形態）図１は本発明の第１の実施形態に係
るモジュール型半導体装置及びこれを用いた電力変換装
置の断面構成を示す模式図であり、図５と同一要素には
同一符号を付してその詳しい説明を省略し、ここでは異
なる部分について主に述べる。なお、以下の各実施形態
も同様にして重複した説明を省略する。本実施形態は、
耐圧の向上、熱抵抗の低減及び機械的信頼性の向上を図
るものであり、具体的には図１に示すように、補助放熱
板１５の外側に配置された補助冷却器２１と、補助放熱
板１５に接合された軟質金属部２２と、軟質金属部２２
の先端に活性金属ろうを介して接合され、配線部材１３
上に摺動自在に配置された絶縁性熱緩衝板２３と、この
絶縁性熱緩衝板２３に配線部材１３を介して対向配置さ
れ、配線部材１３とＳｉチップ４との両者に接合された
導電性熱緩衝板２４と、外囲器２５に設けられた端子取
付部２６並びに圧接力吸収部２７と、補助冷却器２１と
（主）冷却器１１とを互いに押圧しながら締結するため
の締結ボルト部２８とを備えている。Embodiments of the present invention will be described below with reference to the drawings. (First Embodiment) FIG. 1 is a schematic diagram showing a cross-sectional configuration of a module type semiconductor device and a power converter using the same according to a first embodiment of the present invention. The detailed description is omitted by attaching reference numerals, and different portions are mainly described here. In the following respective embodiments, the duplicated description will be omitted in the same manner. In this embodiment,
The purpose of the present invention is to improve the withstand voltage, reduce the thermal resistance and improve the mechanical reliability. Specifically, as shown in FIG. A soft metal portion 22 joined to the plate 15;
Of the wiring member 13
An insulating heat buffer plate 23 slidably disposed on the upper surface, and a conductive member disposed opposite to the insulating heat buffer plate 23 via a wiring member 13 and joined to both the wiring member 13 and the Si chip 4. Bolt for fastening the heat-absorbing plate 24, the terminal mounting portion 26 and the pressure contact absorbing portion 27 provided on the envelope 25, and the auxiliary cooler 21 and the (main) cooler 11 while pressing each other. And a section 28.
【００４２】ここで、補助放熱板１５はＣｕから形成さ
れ、軟質金属部２２はＡｌから形成されている。但し、
補助放熱板１５及び放熱板６は、Ｃｕに代えて、Ｃｕ合
金、Ａｌ又はＡｌ合金から形成されてもよく、軟質金属
部２２は、Ａｌに代えて、Ａｌ合金から形成されてもよ
い。Here, the auxiliary radiator plate 15 is formed of Cu, and the soft metal portion 22 is formed of Al. However,
The auxiliary heat radiating plate 15 and the heat radiating plate 6 may be formed of Cu alloy, Al or Al alloy instead of Cu, and the soft metal portion 22 may be formed of Al alloy instead of Al.
【００４３】絶縁性熱緩衝板２３は、配線部材１３側又
は軟質金属部２２側、あるいはこれら両側に金属板を備
えてもよい。The insulating heat buffer plate 23 may be provided with a metal plate on the wiring member 13 side or the soft metal portion 22 side, or on both sides thereof.
【００４４】導電性熱緩衝板（低熱膨張部材）２４はＭ
ｏから形成されているが、Ｍｏに代えて、Ｗ、ＷとＣｕ
との複合材料、ＭｏとＣｕとの複合材料、又はＷとＭｏ
とＣｕとの複合材料から形成されてもよい。The conductive thermal buffer plate (low thermal expansion member) 24 is made of M
o, but instead of Mo, W, W and Cu
Composite material, Mo and Cu composite material, or W and Mo
May be formed from a composite material of Cu and Cu.
【００４５】端子取付部２６は、端子を取付けるため、
機械的な応力に強い有機性絶縁物から形成されている。
圧接力吸収部（応力吸収部材）２７は、圧接時の圧縮力
を吸収するため、弾性を有する有機性絶縁物から形成さ
れている。The terminal mounting portion 26 is used for mounting a terminal.
It is formed from an organic insulator that is resistant to mechanical stress.
The press-contact absorbing portion (stress-absorbing member) 27 is formed of an elastic organic insulator to absorb a compressive force at the time of press-contact.
【００４６】次に、以上のように構成されたモジュール
型半導体装置及びこれを用いた電力変換装置の作用につ
いて説明する。いま、配線部材１３を介して電力が通電
され、Ｓｉチップ４が動作して熱を生じたとする。この
熱は、Ｓｉチップ４から下方に向かって絶縁基板３及び
（主）放熱板６を介して（主）冷却器１１に流出される
一方、Ｓｉチップ４から上方に向かって導電性熱緩衝板
２４、配線部材１３、絶縁性熱緩衝板２３、軟質金属部
２２及び補助放熱板１５を介して補助冷却器２１に流出
される。Next, the operation of the module type semiconductor device having the above-described structure and the power converter using the same will be described. Now, it is assumed that electric power is supplied through the wiring member 13 and the Si chip 4 operates to generate heat. This heat flows downward from the Si chip 4 to the (main) cooler 11 via the insulating substrate 3 and the (main) radiator plate 6, while the conductive heat buffer plate extends upward from the Si chip 4. 24, the wiring member 13, the insulating heat buffer plate 23, the soft metal part 22, and the auxiliary heat radiating plate 15 flow out to the auxiliary cooler 21.
【００４７】すなわち、この電力変換装置では、モジュ
ール型半導体装置のＳｉチップ４で発生した熱を上下両
面から流出させてＳｉチップ４を冷却できるため、大容
量化に伴う温度上昇を抑制することができる。That is, in this power converter, since the heat generated in the Si chip 4 of the module type semiconductor device can be discharged from the upper and lower surfaces to cool the Si chip 4, it is possible to suppress the temperature rise accompanying the increase in capacity. it can.
【００４８】また、ボルト締めによる圧接力が軟質金属
部２２を介してＳｉチップ４直上に作用する。このた
め、Ｓｉチップ４直下での放熱板６と冷却器１１との密
着性を改善して接触熱抵抗を低減でき、もって、Ｓｉチ
ップ４の冷却効率を向上させることができる。Further, the pressing force by bolting acts directly on the Si chip 4 via the soft metal portion 22. For this reason, the contact heat resistance can be reduced by improving the adhesion between the heat sink 6 and the cooler 11 immediately below the Si chip 4, and the cooling efficiency of the Si chip 4 can be improved.
【００４９】さらに、配線部材１３と絶縁性熱緩衝板２
３との間が非接合であって熱応力に応じて摺動するた
め、従来の両面冷却タイプとは異なり、熱応力による破
損等の可能性が生じない。上述したように本実施形態に
よれば、軟質金属部２２が両放熱板６，１５間に配置さ
れたので、両側の放熱板６，１５を一対の冷却器１１，
２１で圧接しながら挟み込んで電力変換装置を構成した
場合、Ｓｉチップ４直上及び直下の位置において放熱板
１５，６と冷却器２１，１１が密着して接触熱抵抗を低
減できるので、極めて高い冷却効率を実現でき、もっ
て、耐圧の向上、熱抵抗の低減及び機械的信頼性の向上
を達成して大容量化を実現させることができる。Further, the wiring member 13 and the insulating heat buffer plate 2
3 is non-joined and slides according to thermal stress, so unlike the conventional double-sided cooling type, there is no possibility of breakage due to thermal stress. As described above, according to the present embodiment, since the soft metal portion 22 is disposed between the heat radiating plates 6 and 15, the heat radiating plates 6 and 15 on both sides are connected to the pair of coolers 11 and 15.
When the power converter is constituted by being sandwiched while being pressed by 21, the heat sinks 15, 6 and the coolers 21, 11 are in close contact with each other at positions directly above and directly below the Si chip 4, so that the contact thermal resistance can be reduced. Efficiency can be realized, and therefore, a large capacity can be realized by achieving an improvement in withstand voltage, a reduction in thermal resistance, and an improvement in mechanical reliability.
【００５０】また、軟質金属部２２が絶縁性熱緩衝板２
３及び補助放熱板１５の両者に接合され、絶縁性熱緩衝
板２３が配線部材１３上に摺動自在に配置されているの
で、絶縁性熱緩衝板２３／軟質金属部２２間及び軟質金
属部２２／補助放熱板１５間の熱抵抗を非接合の場合に
比べ、大幅に低減させることができる。Further, the soft metal portion 22 is made of the insulating heat buffer plate 2.
3 and the auxiliary heat radiating plate 15, and the insulating heat buffer plate 23 is slidably disposed on the wiring member 13, so that the space between the insulating heat buffer plate 23 and the soft metal portion 22 and the soft metal portion are provided. The thermal resistance between 22 / auxiliary heat radiating plate 15 can be greatly reduced as compared with the case of non-bonding.
【００５１】また、補助放熱板１５／軟質金属部２２／
絶縁性熱緩衝板２３が一体化されているため、装置組立
て時の作業が容易となり、製造コストを低減させること
ができる。The auxiliary heat sink 15 / the soft metal portion 22 /
Since the insulating heat buffer plate 23 is integrated, the work at the time of assembling the device becomes easy, and the manufacturing cost can be reduced.
【００５２】さらに、絶縁性熱緩衝板２３／配線部材１
３間を非接合にして摺動自在としたことにより、組立て
時の機械的な応力や稼動時の熱応力がＳｉチップ４及び
絶縁基板３の面方向には加わらないので、機械的信頼性
を向上させることができる。Further, the insulating heat buffer plate 23 / wiring member 1
3 is made non-joint and slidable, so that mechanical stress during assembly and thermal stress during operation are not applied in the surface direction of the Si chip 4 and the insulating substrate 3, so that mechanical reliability is improved. Can be improved.
【００５３】さらに、軟質金属部２２が活性金属ろうを
介して絶縁性熱緩衝板２３に接合されているので、絶縁
性熱緩衝板２３をセラミックスとした場合、金属からな
る軟質金属部２２との接合を実現させることができる。Further, since the soft metal portion 22 is joined to the insulating heat buffer plate 23 via the active metal brazing, when the insulating heat buffer plate 23 is made of ceramics, the soft metal portion 22 is made of metal. Joining can be realized.
【００５４】また、絶縁性熱緩衝板２３としては、配線
部材１３側又は軟質金属部２２側、あるいはこれら両部
材１３，２２側に金属板を備えた場合、絶縁性熱緩衝板
２３の配線部材１３側に金属板を予め設けたことによ
り、配線部材１３と絶縁性熱緩衝板２３間の接触熱抵抗
を低減でき、一方、絶縁性熱緩衝板２３の軟質金属部２
２側に金属板を設けたことにより、軟質金属部２２との
接合をより容易に行なうことができる。When the insulating heat buffer plate 23 is provided with a metal plate on the wiring member 13 side, the soft metal portion 22 side, or both of the members 13 and 22, the wiring member of the insulating heat buffer plate 23 is provided. By providing a metal plate in advance on the side 13, the contact thermal resistance between the wiring member 13 and the insulating heat buffer plate 23 can be reduced.
By providing the metal plate on the two sides, bonding with the soft metal portion 22 can be performed more easily.
【００５５】さらに、軟質金属部２２としては、Ａｌ又
はＡｌ合金が材料であるとき、このような軟質の材料を
用いることにより、Ｓｉチップ４や絶縁基板３などを損
傷するような過度な圧接力を生ずることなく、容易且つ
確実に、放熱板６，１５と冷却器１１，２１を密着させ
ることができる。また、Ａｌ又はＡｌ合金は、高熱伝導
性金属でもあるので、軟質金属部２２自体の熱抵抗を低
減させることができる。Further, when the soft metal portion 22 is made of Al or Al alloy, by using such a soft material, an excessive pressing force such as damaging the Si chip 4 and the insulating substrate 3 can be obtained. The heat sinks 6 and 15 and the coolers 11 and 21 can be easily and reliably brought into close contact with each other without causing the problem. In addition, since Al or an Al alloy is also a highly thermally conductive metal, the thermal resistance of the soft metal portion 22 itself can be reduced.
【００５６】また、（主）放熱板６及び補助放熱板１５
としては、Ｃｕ、Ａｌ、Ｃｕ合金又はＡｌ合金が材料で
あるので、放熱板６及び補助放熱板１５が高熱伝導かつ
軟質となるので、軟質金属部２２による放熱板６，１５
の面垂直方向の圧接力により、各放熱板６，１５と各冷
却器１１，２１との密接を図ることができる。The (main) radiator plate 6 and the auxiliary radiator plate 15
Since the heat radiating plate 6 and the auxiliary heat radiating plate 15 have high heat conduction and softness because Cu, Al, Cu alloy or Al alloy is a material, the heat radiating plates 6 and 15
The close contact between each of the heat radiating plates 6, 15 and each of the coolers 11 and 21 can be achieved by the pressure contact force in the direction perpendicular to the surface.
【００５７】さらに、導電性熱緩衝板（低熱膨張部材）
２４としては、Ｗ、Ｍｏ、ＷとＣｕとの複合材料、Ｍｏ
とＣｕとの複合材料、又はＷとＭｏとＣｕとの複合材料
からなるので、Ｓｉチップ４と配線部材１３との間の接
合部の熱疲労を軽減させることができる。また、この部
分が過渡的な熱吸収源となり、瞬間的なＳｉチップ４の
発熱によってＳｉチップ４が過大に温度上昇して破壊に
至る現象を抑制することができる。Further, a conductive thermal buffer plate (low thermal expansion member)
24, W, Mo, a composite material of W and Cu, Mo
, Or a composite material of W, Mo, and Cu, it is possible to reduce the thermal fatigue of the joint between the Si chip 4 and the wiring member 13. In addition, this portion serves as a transient heat absorption source, and it is possible to suppress a phenomenon in which the Si chip 4 is excessively heated by the instantaneous heat generation and is broken.
【００５８】また、外囲器２５としては、弾力性及び絶
縁性を有し、少なくとも一部に設けられた圧接力吸収部
２７を備えたので、両側から１対の冷却器１１，２１で
各放熱板６，１５を圧接した際に、各放熱板６，１５と
各冷却器１１，２１との間を密着させるのに十分な応力
を軟質部材に作用させることができる。Further, since the envelope 25 has elasticity and insulating properties and is provided with a pressure contact absorbing portion 27 provided at least in a part thereof, each of the pair of coolers 11 and 21 from both sides is used for each. When the heat radiating plates 6 and 15 are pressed against each other, a sufficient stress can be applied to the soft member to bring the heat radiating plates 6 and 15 into close contact with the coolers 11 and 21.
【００５９】なお、配線部材１３と絶縁性熱緩衝板２３
との間を接合し、さらに、絶縁性熱緩衝板２３と軟質金
属部２２との間あるいは軟質金属部２２と補助放熱板１
５との間を非接合とした変形構成としても、本実施形態
と同様な効果を得ることができる。 （第２の実施形態）図２は本発明の第２の実施形態に係
るモジュール型半導体装置及びこれを用いた電力変換装
置の断面構成を示す模式図である。The wiring member 13 and the insulating heat buffer plate 23
And further, between the insulating heat buffer plate 23 and the soft metal portion 22 or between the soft metal portion 22 and the auxiliary heat sink 1.
5, the same effect as in the present embodiment can be obtained. (Second Embodiment) FIG. 2 is a schematic diagram showing a cross-sectional structure of a module type semiconductor device according to a second embodiment of the present invention and a power converter using the same.
【００６０】本実施形態は、第１の実施形態の変形形態
であり、主冷却器と補助冷却器との熱負荷の均一化を図
るものであって、具体的には第１の実施形態に述べた構
成を２つ用い、且つ共有化した補助冷却器２１を中心に
互いに上下を逆にして組合せた構成となっている。This embodiment is a modification of the first embodiment, and aims at equalizing the heat load between the main cooler and the auxiliary cooler. Specifically, this embodiment is different from the first embodiment. The above-mentioned two configurations are used, and the configuration is such that the two components are combined upside down with respect to the shared auxiliary cooler 21.
【００６１】以上のような構成により、第１の実施形態
の効果に加え、（主）冷却器１１と補助冷却器２１との
２つの冷却器１１，２１における夫々の熱負荷が均質化
し、さらに、熱損失を低減させることができる。 （第３の実施形態）図３は本発明の第３の実施形態に係
るモジュール型半導体装置及びこれを用いた電力変換装
置の断面構成を示す模式図である。本実施形態は、第１
の実施形態の変形形態であり、装置のより一層のコンパ
クト化を図るものであって、具体的には、第１の実施形
態に述べた構成を４つ用い、各電力変換装置を順次積層
し、且つ補助冷却器２１上に（主）冷却器１１が積層さ
れる場合、補助冷却器２１を省略するようにして組合せ
た構成となっている。With the above configuration, in addition to the effect of the first embodiment, the respective heat loads in the two coolers 11 and 21 of the (main) cooler 11 and the auxiliary cooler 21 are homogenized, and furthermore, In addition, heat loss can be reduced. (Third Embodiment) FIG. 3 is a schematic diagram showing a sectional configuration of a module type semiconductor device and a power converter using the same according to a third embodiment of the present invention. In the present embodiment, the first
This is a modification of the embodiment of the present invention, which is intended to further reduce the size of the device. Specifically, four power conversion devices described in the first embodiment are used, and the power conversion devices are sequentially stacked. When the (main) cooler 11 is stacked on the auxiliary cooler 21, the auxiliary cooler 21 is omitted and combined.
【００６２】以上のような構成により、第１の実施形態
の効果に加え、第１実施形態の装置をｎ台設けた場合と
比べ、（ｎ−１）台の補助冷却器２１を省略できる分だ
け、装置の一層のコンパクト化を図ることができる。With the above configuration, in addition to the effect of the first embodiment, (n-1) auxiliary coolers 21 can be omitted as compared with the case where n units of the first embodiment are provided. Only the apparatus can be made more compact.
【００６３】その他、本発明はその要旨を逸脱しない範
囲で種々変形して実施できる。In addition, the present invention can be variously modified and implemented without departing from the gist thereof.
【００６４】[0064]
【発明の効果】以上説明したように本発明によれば、耐
圧の向上、熱抵抗の低減及び機械的信頼性の向上によ
り、大容量化を実現できるモジュール型半導体装置及び
これを用いた電力変換装置を提供できる。As described above, according to the present invention, a module type semiconductor device capable of realizing a large capacity by improving the withstand voltage, reducing the thermal resistance and improving the mechanical reliability, and a power converter using the same. Equipment can be provided.
【図１】本発明の第１の実施形態に係るモジュール型半
導体装置及びこれを用いた電力変換装置の断面構成を示
す模式図FIG. 1 is a schematic diagram showing a cross-sectional configuration of a modular semiconductor device according to a first embodiment of the present invention and a power converter using the same.
【図２】本発明の第２の実施形態に係るモジュール型半
導体装置及びこれを用いた電力変換装置の断面構成を示
す模式図FIG. 2 is a schematic diagram showing a cross-sectional configuration of a modular semiconductor device and a power converter using the same according to a second embodiment of the present invention.
【図３】本発明の第３の実施形態に係るモジュール型半
導体装置及びこれを用いた電力変換装置の断面構成を示
す模式図FIG. 3 is a schematic diagram illustrating a cross-sectional configuration of a modular semiconductor device according to a third embodiment of the present invention and a power converter using the same.
【図４】一般的な片側冷却タイプのモジュール型半導体
装置とこれを用いた電力変換装置の断面構成を示す模式
図FIG. 4 is a schematic diagram showing a cross-sectional configuration of a general single-sided cooling type modular semiconductor device and a power converter using the same.
【図５】従来の両面冷却タイプのモジュール型半導体装
置を用いた電力変換装置の断面構成を示す模式図FIG. 5 is a schematic diagram showing a cross-sectional configuration of a power conversion device using a conventional double-sided cooling type modular semiconductor device.
１，２…金属薄膜層 ３…絶縁基板 ４…Ｓｉチップ ６…放熱板 ８…外部端子用リード線 １０…Ｓｉゲル １１…冷却器 １３…配線部材 １５…補助放熱板 ２１…補助冷却器 ２２…軟質金属部 ２３…絶縁性熱緩衝板 ２４…導電性熱緩衝板 ２５…外囲器 ２６…端子取付部 ２７…圧接力吸収部 ２８…締結ボルト部 1, 2, metal thin film layer 3, insulating substrate 4, Si chip 6, heat sink 8, lead wire for external terminal 10, Si gel 11, cooler 13, wiring member 15, auxiliary heat sink 21, auxiliary cooler 22, Soft metal part 23 ... insulating heat buffer plate 24 ... conductive heat buffer plate 25 ... envelope 26 ... terminal mounting part 27 ... pressure contact absorbing part 28 ... fastening bolt part
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山本 敦史 東京都府中市東芝町１番地 株式会社東芝 府中工場内 (72)発明者 草野 貴史 東京都府中市東芝町１番地 株式会社東芝 府中工場内 (72)発明者 西村 隆宣 東京都府中市東芝町１番地 株式会社東芝 府中工場内 (72)発明者 石渡 裕 神奈川県横浜市鶴見区末広町２丁目４番地 株式会社東芝京浜事業所内 (72)発明者 田中 明 神奈川県横浜市鶴見区末広町２丁目４番地 株式会社東芝京浜事業所内 (72)発明者 荒木 浩二 神奈川県川崎市幸区小向東芝町１番地 株 式会社東芝多摩川工場内 (72)発明者 福吉 寛 神奈川県川崎市幸区小向東芝町１番地 株 式会社東芝多摩川工場内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Atsushi Yamamoto 1 Toshiba-cho, Fuchu-shi, Tokyo Inside the Toshiba Fuchu Plant (72) Inventor Takashi Kusano 1-Toshiba-cho, Fuchu-shi, Tokyo Inside the Fuchu Plant, Toshiba ( 72) Inventor Takanori Nishimura 1 Toshiba-cho, Fuchu-shi, Tokyo Inside the Fuchu Plant, Toshiba Corporation (72) Inventor Hiroshi Ishiwatari 2-4 Suehirocho, Tsurumi-ku, Yokohama-shi, Kanagawa Prefecture In-house Toshiba Keihin Corporation (72) Inventor Akira Tanaka 2-4, Suehiro-cho, Tsurumi-ku, Yokohama-shi, Kanagawa Prefecture Inside the Toshiba Keihin Plant Co., Ltd. Person Hiroshi Fukuyoshi 1 Tokoba, Komukai Toshiba-cho, Saiwai-ku, Kawasaki City, Kanagawa Prefecture Inside the Toshiba Tamagawa Plant
Claims (10)
高熱伝導性の絶縁基板と、 前記絶縁基板における前記主放熱板とは反対面の導電性
薄膜に接合された半導体素子と、 前記半導体素子に接合された低熱膨張部材と、 前記低熱膨張部材に接合されて前記半導体素子に電気的
に接続された薄板状の配線部材と、 前記低熱膨脹部材に対向して前記配線部材上に配置され
た絶縁部材と、 前記絶縁部材上に配置され、前記絶縁部材よりも軟質の
軟質部材と、 前記絶縁基板を囲うように前記主放熱板上に設けられた
外囲器と、 前記軟質部材上に配置され、前記主放熱板に対向して蓋
をするように前記外囲器に取付けられた補助放熱板と、 前記外囲器を貫通して保持され、前記配線部材に電気的
に接続された外部端子と、 前記主放熱板、前記補助放熱板及び前記外囲器で囲まれ
た内部に充填される充填部材とを備えたことを特徴とす
るモジュール型半導体装置。1. A main heat sink, a high heat conductive insulating substrate bonded on the main heat sink and having conductive thin films on both surfaces, and a conductive thin film on the insulating substrate on a surface opposite to the main heat sink. A low-thermal-expansion member bonded to the semiconductor element, a thin-plate-shaped wiring member bonded to the low-thermal-expansion member and electrically connected to the semiconductor element, and a low-thermal-expansion member. An insulating member disposed on the wiring member to face, a soft member disposed on the insulating member and softer than the insulating member, and provided on the main heat sink so as to surround the insulating substrate. An envelope, an auxiliary heat radiator disposed on the soft member, and attached to the envelope so as to cover the main heat radiator and cover the main radiator, and held through the envelope; An external terminal electrically connected to the wiring member; A module-type semiconductor device comprising: a main heat radiating plate, an auxiliary heat radiating plate, and a filling member that is filled in an interior surrounded by the envelope.
置において、 前記軟質部材は、前記絶縁部材及び前記補助放熱板の両
者に接合され、 前記絶縁部材は、前記配線部材上に摺動自在に配置され
ていることを特徴とするモジュール型半導体装置。2. The module type semiconductor device according to claim 1, wherein the soft member is joined to both the insulating member and the auxiliary heat sink, and the insulating member is slidably mounted on the wiring member. A modular semiconductor device, which is arranged.
ル型半導体装置において、 前記軟質部材は、活性金属ろうを介して前記絶縁部材に
接合されていることを特徴とするモジュール型半導体装
置。3. The modular semiconductor device according to claim 1, wherein the soft member is joined to the insulating member via an active metal brazing.
記載のモジュール型半導体装置において、 前記絶縁部材は、前記配線部材側又は前記軟質部材側、
あるいはこれら両部材側に金属板を備えたことを特徴と
するモジュール型半導体装置。4. The module type semiconductor device according to claim 1, wherein the insulating member is provided on the wiring member side or the soft member side.
Alternatively, a modular semiconductor device comprising a metal plate on both of these members.
記載のモジュール型半導体装置において、 前記軟質部材は、Ａｌ又はＡｌ合金が材料であることを
特徴とするモジュール型半導体装置。5. The modular semiconductor device according to claim 1, wherein said soft member is made of Al or an Al alloy.
記載のモジュール型半導体装置において、 前記主放熱板及び前記補助放熱板は、Ｃｕ、Ａｌ、Ｃｕ
合金又はＡｌ合金が材料であることを特徴とするモジュ
ール型半導体装置。6. The module type semiconductor device according to claim 1, wherein said main radiator plate and said auxiliary radiator plate are made of Cu, Al, Cu.
A modular semiconductor device, wherein an alloy or an Al alloy is a material.
記載のモジュール型半導体装置において、 前記低熱膨張部材は、Ｗ、Ｍｏ、ＷとＣｕとの複合材
料、ＭｏとＣｕとの複合材料、又はＷとＭｏとＣｕとの
複合材料からなることを特徴とするモジュール型半導体
装置。7. The modular semiconductor device according to claim 1, wherein said low thermal expansion member is made of W, Mo, a composite material of W and Cu, or a composite material of Mo and Cu. A modular semiconductor device comprising a material or a composite material of W, Mo, and Cu.
記載のモジュール型半導体装置において、 前記外囲器は、弾力性及び絶縁性を有し、少なくとも一
部に設けられた応力吸収部材を備えたことを特徴とする
モジュール型半導体装置。8. The module-type semiconductor device according to claim 1, wherein the envelope has elasticity and insulation, and has at least a portion provided with a stress absorbing member. A modular semiconductor device comprising a member.
記載のモジュール型半導体装置を用いた電力変換装置に
おいて、 前記モジュール型半導体装置本体を挟む１対の冷却器
と、 前記１対の冷却器を互いに近づけるように圧接するため
の圧接部材とを備えたことを特徴とする電力変換装置。9. A power converter using the module type semiconductor device according to claim 1, wherein a pair of coolers sandwiching the module type semiconductor device main body; And a press-contact member for press-contacting the coolers so as to approach each other.
に記載のモジュール型半導体装置を用いた電力変換装置
において、 ｎ台の前記モジュール型半導体装置本体を個別に挟む
（ｎ＋１）台の冷却器と、 前記（ｎ＋１）台の冷却器のうち、両端に位置した１対
の冷却器を互いに近づけるように圧接するための圧接部
材とを備えたことを特徴とする電力変換装置。10. A power conversion device using the modular semiconductor device according to claim 1, wherein (n + 1) units each individually sandwiching the n modular semiconductor device bodies. A power converter comprising: a cooler; and a press-contact member for pressing a pair of coolers located at both ends of the (n + 1) coolers so as to approach each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34271698A JP3394000B2 (en) | 1998-12-02 | 1998-12-02 | Modular semiconductor device and power conversion device using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34271698A JP3394000B2 (en) | 1998-12-02 | 1998-12-02 | Modular semiconductor device and power conversion device using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000174198A true JP2000174198A (en) | 2000-06-23 |
| JP3394000B2 JP3394000B2 (en) | 2003-04-07 |
Family
ID=18355944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34271698A Expired - Fee Related JP3394000B2 (en) | 1998-12-02 | 1998-12-02 | Modular semiconductor device and power conversion device using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3394000B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010110445A1 (en) * | 2009-03-26 | 2010-09-30 | 本田技研工業株式会社 | Semiconductor device, and apparatus and method for manufacturing semiconductor device |
| JP2010232365A (en) * | 2009-03-26 | 2010-10-14 | Honda Motor Co Ltd | Semiconductor device |
| JP2010239033A (en) * | 2009-03-31 | 2010-10-21 | Honda Motor Co Ltd | Semiconductor device, and method of manufacturing the same |
-
1998
- 1998-12-02 JP JP34271698A patent/JP3394000B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010110445A1 (en) * | 2009-03-26 | 2010-09-30 | 本田技研工業株式会社 | Semiconductor device, and apparatus and method for manufacturing semiconductor device |
| JP2010232365A (en) * | 2009-03-26 | 2010-10-14 | Honda Motor Co Ltd | Semiconductor device |
| JP2010239033A (en) * | 2009-03-31 | 2010-10-21 | Honda Motor Co Ltd | Semiconductor device, and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3394000B2 (en) | 2003-04-07 |
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