JP2000174181A - Heat radiation mechanism for electronic device - Google Patents
Heat radiation mechanism for electronic deviceInfo
- Publication number
- JP2000174181A JP2000174181A JP10346374A JP34637498A JP2000174181A JP 2000174181 A JP2000174181 A JP 2000174181A JP 10346374 A JP10346374 A JP 10346374A JP 34637498 A JP34637498 A JP 34637498A JP 2000174181 A JP2000174181 A JP 2000174181A
- Authority
- JP
- Japan
- Prior art keywords
- heat radiating
- electronic device
- radiating plate
- heat
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は電子回路ユニット等
の基板上に搭載された電子デバイスの、本体からリード
部へ伝導される熱を放熱することができる電子デバイス
の放熱機構に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat radiation mechanism for an electronic device mounted on a substrate such as an electronic circuit unit, which can radiate heat conducted from a main body to a lead portion.
【０００２】[0002]
【従来の技術】近年、例えばカラーテレビジョンのよう
な電子機器に使用されているトランジスタリード脚のは
んだ接合部の熱応力クラック対策等の分野においては、
はんだ接合部熱応力対策として、まずトランジスタ本体
の熱を充分に放熱するように、トランジスタ本体の放熱
板の面積や形状を例えばカラーテレビジョンのシャーシ
構造において最適化している。2. Description of the Related Art In recent years, for example, in the field of measures against thermal stress cracks in solder joints of transistor lead legs used in electronic devices such as color televisions,
As a countermeasure against solder joint thermal stress, the area and shape of the heat sink of the transistor main body are optimized in a chassis structure of a color television, for example, so as to sufficiently radiate the heat of the transistor main body.
【０００３】またプリント基板においては、パターン、
ランド形状、トランジスタのリード部のフォーミング形
状、基板穴サイズ等の検討を通して、できるだけトラン
ジスタのリード脚のランド径を大きくしたり、ランド形
状を工夫したりするように、版下の設計がなされてい
る。On the printed circuit board, patterns,
Through studying the land shape, the forming shape of the transistor lead, the hole size of the substrate, etc., the underlaying design is made so that the land diameter of the transistor lead legs is made as large as possible and the land shape is devised. .
【０００４】また更には基板穴にハトメを予め施し、デ
イップ後の強度を増加させている。また生産工程におい
てもデイップ槽の条件を検討しできるだけフィレットを
高くするようにしたり、はんだ濡れ性を良くしたりして
強度確保をはかっている。また必要に応じて、指示によ
り追加はんだが行われている。一方、はんだそのものも
クラック防止の為の物性改善の検討が行われている。Further, eyelets are preliminarily applied to the substrate holes to increase the strength after the dip. Also in the production process, the conditions of the dip tank are examined, and the fillet is made as high as possible, and the solder wettability is improved to secure the strength. In addition, if necessary, additional soldering is performed according to instructions. On the other hand, studies have been made on improving the physical properties of solder itself to prevent cracks.
【０００５】[0005]
【発明が解決しようとする課題】上記のような状況のな
かにおいても、長時間使用されるたとえばカラーテレビ
ジョンのような電子機器に使われているトランジスタで
は、電源のオン／オフ等により、トランジスタの熱がリ
ード部に繰り返し伝導され、リード部が熱膨張・収縮に
より伸縮を繰り返す。Even in the above-described situation, a transistor used for a long time in an electronic device such as a color television is turned on / off by a power source or the like. Is repeatedly transmitted to the lead portion, and the lead portion repeats expansion and contraction due to thermal expansion and contraction.
【０００６】これによりまれにリード脚とフィレットの
間の接合部が剥離即ち界面剥離を起こし、これが進行す
るとはんだクラックにつながる可能性がある。即ちトラ
ンジスタ本体の使用温度は前述した対策により十分保証
されているが、トランジスタ本体に取り付けた放熱板で
は、直接トランジスタのリード部を放熱するには不足が
ある。そのため、はんだクラックを引き起こす可能性が
依然として残ってしまう。したがってリード部の放熱の
ための何らかの対策が望まれている。As a result, the joint between the lead leg and the fillet rarely peels off, that is, interfacial peeling, which may lead to a solder crack. That is, the operating temperature of the transistor body is sufficiently guaranteed by the above-described measures, but there is insufficient heat radiation plate attached to the transistor body to directly radiate the leads of the transistor. Therefore, the possibility of causing solder cracks still remains. Therefore, some measures for heat radiation of the lead portion are desired.
【０００７】そこで本発明は、かかる従来の実情に鑑み
て提案されたものであって、特に電子デバイスのリード
脚のはんだ接合部の熱を直に放熱し、熱応力によるクラ
ックの発生を防止することが可能な電子デバイスの放熱
機構を提供することを目的としている。Accordingly, the present invention has been proposed in view of such a conventional situation, and in particular, directly radiates heat at a solder joint of a lead leg of an electronic device to prevent cracks due to thermal stress. It is an object of the present invention to provide a heat dissipation mechanism of an electronic device that can perform the heat dissipation.
【０００８】[0008]
【課題を解決するための手段】（１）本発明は、基板上
に搭載されるとともに、リード部が基板の導電材に接着
された電子デバイスにおいて、前記リード部のうち、高
温となるリード部に直接取り付けられた放熱板を備えた
ことを特徴とし、前記放熱板は前記高温となるリード部
に圧入により取り付けられていることを特徴とし、前記
電子デバイスのリード部は、放熱板を取り付けるリード
部と放熱板を取り付けないリード部との間隔が物理上可
能な最長間隔となるように形成されていることを特徴と
している。According to the present invention, there is provided an electronic device mounted on a substrate and having a lead portion adhered to a conductive material of the substrate. A radiator plate directly attached to the electronic device, wherein the radiator plate is attached by press-fitting to the high-temperature lead portion, and the lead portion of the electronic device is a lead to which the radiator plate is attached. It is characterized in that the space between the portion and the lead portion to which the heat sink is not attached is formed to be the longest physically possible space.
【０００９】また前記放熱板はリング状の放熱板である
か、又は直方体形状の放熱板であるか、又は表面にフィ
ンを有して形成されているか、又は表面に凹凸部を有し
て形成されているか、又は複数の薄板を所定間隔毎に積
層して形成されていることを特徴としている。The heat radiating plate may be a ring-shaped heat radiating plate, a rectangular parallelepiped radiating plate, a fin formed on the surface, or an uneven portion formed on the surface. Or a plurality of thin plates are laminated at predetermined intervals.
【００１０】（２）電子デバイス本体の発熱によりリー
ド部へ伝導される熱は、放熱板により直に放熱される。
このためリード部と基板の導電材との接合部分（はんだ
等）における熱量は多くならず、熱膨張、収縮量の変動
は電源オン／オフ（電子デバイスのオン／オフ）によっ
て大きくならず、熱応力値は抑制され、前記接合部分に
クラックは生じない。(2) The heat conducted to the lead portion by the heat generated by the electronic device body is directly radiated by the heat radiating plate.
Therefore, the amount of heat at the joint (solder or the like) between the lead portion and the conductive material of the substrate does not increase, and the fluctuation of the amount of thermal expansion and contraction does not increase due to power on / off (on / off of the electronic device). The stress value is suppressed and no crack occurs at the joint.
【００１１】[0011]
【発明の実施の形態】以下、図面を参照しながら本発明
の一実施形態例を説明する。図１は本発明を電子回路の
基板上に搭載されるトランジスタに適用した実施形態例
を示している。図１において１は下面に導電材を印刷し
てなる基板である。２は基板上に搭載されたトランジス
タであり、両サイドのリード脚２ａ，２ｂは基板１に設
けられた各貫通孔を通して下面の導電材にはんだ付けさ
れている。またトランジスタ２の中央のリード脚２ｃ
は、圧入により取り付けられたリング状の放熱板３およ
び基板１に設けられた貫通孔を通して下面の導電材には
んだ付けされている。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows an embodiment in which the present invention is applied to a transistor mounted on a substrate of an electronic circuit. In FIG. 1, reference numeral 1 denotes a substrate formed by printing a conductive material on a lower surface. Reference numeral 2 denotes a transistor mounted on the substrate, and the lead legs 2a and 2b on both sides are soldered to conductive materials on the lower surface through respective through holes provided in the substrate 1. The lead leg 2c at the center of the transistor 2
Are soldered to the conductive material on the lower surface through a ring-shaped heat sink 3 attached by press fitting and through holes provided in the substrate 1.
【００１２】前記放熱板３は、リード脚２ｃの径よりも
若干小さい径で中央部に設けられた圧入部３ａに、リー
ド脚２ｃを圧入することにより、簡単に取り付けられる
ものである。また放熱板３は、金太郎飴のような押し出
し成形により製作することができ、中空パイプを輪切り
切断することで簡単に生産できる。The heat radiating plate 3 is easily attached by press-fitting the lead leg 2c into a press-fitting portion 3a provided at the center with a diameter slightly smaller than the diameter of the lead leg 2c. Further, the heat radiating plate 3 can be manufactured by extrusion molding such as Kintaro candy, and can be easily produced by cutting a hollow pipe into a ring.
【００１３】上記のように放熱板３をトランジスタ２の
中央のリード脚２ｃに取り付けるのは、トランジスタ２
の内部構造が図２のとおりであることから、図３の温度
分布図に示すように、中央のリード脚２ｃの温度上昇が
両サイドのリード脚２ａ，２ｂに比べて約１０℃高いた
めである。The heat sink 3 is attached to the lead leg 2c at the center of the transistor 2 as described above.
2, the temperature rise of the center lead leg 2c is about 10 ° C. higher than the lead legs 2a, 2b on both sides, as shown in the temperature distribution diagram of FIG. is there.
【００１４】また前記放熱板は図４に示す板状の、例え
ば直方体形状の放熱板１３のように形成しても良い。The radiator plate may be formed as a plate-like radiator plate 13 shown in FIG.
【００１５】ここで本発明の放熱板の大きさはトランジ
スタ２の両サイドのリード脚２ａ，２ｂ間の距離と、リ
ード脚２ａ，２ｂと中央のリード脚２ｃとの間隔で決定
される。そこで本発明では、例えば図１、図４のように
中央のリード脚２ｃのみをトランジスタ２の上部から見
て本体よりはみ出るように折り曲げた、いわゆるデルタ
型に構成するに限らず、図５（ａ），（ｂ）に示すよう
に、両サイドのリード脚２ａ，２ｂをも中央のリード脚
２ｃとは逆方向に折り曲げてリード脚間の距離を拡大
し、いわゆる拡大デルタ型構造に構成しても良い。Here, the size of the heat sink of the present invention is determined by the distance between the lead legs 2a and 2b on both sides of the transistor 2 and the distance between the lead legs 2a and 2b and the central lead leg 2c. Therefore, the present invention is not limited to a so-called delta type in which only the center lead leg 2c is bent so as to protrude from the main body when viewed from above the transistor 2 as shown in FIGS. ) And (b), the lead legs 2a and 2b on both sides are also bent in the opposite direction to the central lead leg 2c to increase the distance between the lead legs, so as to constitute a so-called enlarged delta structure. Is also good.
【００１６】図５のような拡大デルタ型構造にリード脚
を形成することにより、図６に示すように、リング状放
熱板の外周部に特殊フィン２０を設け、放熱板半径ｒを
大きくとった放熱板２３を構成し、該放熱板２３を図１
の場合と同様にリング脚２ｃに取り付けることができ
る。By forming the lead legs in the enlarged delta type structure as shown in FIG. 5, special fins 20 are provided on the outer periphery of the ring-shaped heat sink as shown in FIG. 6 to increase the heat sink radius r. A radiator plate 23 is formed, and the radiator plate 23 is
Can be attached to the ring leg 2c as in the case of (1).
【００１７】図６に示す特殊フィン２０は、複数の薄い
フィンで構成されているため総表面積が大きく、しかも
放熱板全体としての半径ｒが大きいので放熱効果が大で
ある。The special fin 20 shown in FIG. 6 has a large total surface area because it is composed of a plurality of thin fins, and has a large heat dissipation effect because the radius r of the entire heat dissipation plate is large.
【００１８】尚本発明の放熱板の構造は、上記リング
状、直方体形状、特殊フィン付リング形状に限らず、例
えば表面に複数の凹凸を設けたり、複数の薄板を所定間
隔で積層しそれら中央部にリード脚２ｃを圧入するよう
な構造にしても良い。これらの場合も放熱板としての総
表面積が増加するので、多大な放熱効果が得られる。The structure of the heat radiating plate of the present invention is not limited to the above-mentioned ring shape, rectangular parallelepiped shape, and ring shape with special fins. For example, a plurality of irregularities may be provided on the surface, The structure may be such that the lead leg 2c is press-fitted into the portion. Also in these cases, the total surface area as the heat radiating plate increases, so that a great heat radiating effect can be obtained.
【００１９】上記のように構成した本発明の放熱板を用
いた場合の等価熱抵抗による放熱経路を図７に示す。図
７において４１はトランジスタ２の本体に取り付けられ
た放熱板であり、４２ははんだフィレット部を示し、Ｒ
1〜Ｒ5は図示した各部位の熱抵抗を示し、ＲLは中央の
リード脚に取り付けた本発明の放熱板による熱抵抗を示
し、Ｔａは雰囲気温度を示している。FIG. 7 shows a heat radiating path based on the equivalent thermal resistance in the case of using the heat radiating plate of the present invention configured as described above. In FIG. 7, reference numeral 41 denotes a heat sink attached to the main body of the transistor 2, reference numeral 42 denotes a solder fillet portion, and R
1 to R 5 represents the thermal resistance of each part illustrated, R L represents a thermal resistance due to the heat radiating plate of the present invention attached to the center of the lead foot, Ta represents the ambient temperature.
【００２０】図７において、もし従来のように中央のリ
ード脚に放熱板を設けない場合は、熱をロスさせる熱抵
抗ＲLがないため、はんだフィレット部４２における熱
量が多くなる。このため熱量により熱膨張・収縮量の変
動が、電源オン／オフなどにより大きくなり、これが熱
応力値を大きくさせ、はんだクラックの原因になる。In FIG. 7, if a heat sink is not provided on the center lead leg as in the conventional case, there is no heat resistance RL for losing heat, so that the amount of heat in the solder fillet portion 42 increases. For this reason, the fluctuation of the thermal expansion / contraction amount due to the amount of heat increases when the power is turned on / off and the like, which increases the thermal stress value and causes solder cracks.
【００２１】しかしながら本発明のように中央のリード
脚に放熱板を設けた場合は、リード脚を伝ってくる熱を
ロスさせることができ、前記熱応力クラックの発生を防
止することができる。However, when a heat sink is provided on the central lead leg as in the present invention, heat transmitted through the lead leg can be lost, and the occurrence of the thermal stress crack can be prevented.
【００２２】尚本発明の放熱板はトランジスタの中央の
リード脚に取り付けるに限らず、構造上サイド側のリー
ド脚の温度上昇が高くなるようなタイプのトランジスタ
の場合は、当該サイド側のリード脚に取り付けるもので
ある。The heat sink of the present invention is not limited to being attached to the lead leg at the center of the transistor. In the case of a type of transistor in which the temperature rise of the lead leg on the side is structurally high, the lead leg on the side is concerned. It is to be attached to.
【００２３】また本発明の放熱板はトランジスタのリー
ド脚に取り付けるに限らず、他の電子デバイスのリード
脚に取り付けても良い。The heat sink of the present invention is not limited to being attached to the lead leg of a transistor, but may be attached to the lead leg of another electronic device.
【００２４】[0024]
【発明の効果】（１）以上のように本発明によれば、電
子デバイス本体の発熱を一番直に伝えるリード部に伝導
される熱を、直に放熱することができるため、リード部
と基板の導電材とのはんだ接合部の熱応力クラックの発
生を防止することができる。(1) As described above, according to the present invention, it is possible to directly radiate the heat conducted to the lead portion that most directly transmits the heat generated by the electronic device body. It is possible to prevent the occurrence of thermal stress cracks in the solder joint between the substrate and the conductive material.
【００２５】（２）また、放熱板の製作法は、金太郎飴
のような押し出し成形ができ、輪切り切断にて簡単に生
産することができる。(2) In the method of manufacturing the heat radiating plate, extrusion molding such as Kintaro candy can be performed, and the heat radiating plate can be easily produced by cutting in a ring.
【００２６】（３）また、放熱板を圧入によりリード部
へ取り付けることにより、極めて簡単に装着することが
できる。(3) By attaching the heat radiating plate to the lead portion by press-fitting, it is possible to mount it very easily.
【００２７】（４）また、放熱板を取り付けるリード部
と放熱板を取り付けないリード部との間隔を物理上可能
な最長間隔となるように形成することにより、放熱板径
を大きくとることができ、放熱効果が増大する。(4) The diameter of the heat radiating plate can be increased by forming the distance between the lead portion to which the heat radiating plate is attached and the lead portion to which the heat radiating plate is not attached to be the longest physically possible distance. , The heat radiation effect increases.
【００２８】（５）また、放熱板の表面にフィンや凹凸
部を形成するか、又は複数の薄板を所定間隔毎に積層し
て放熱板を構成した場合は、放熱板の総表面積が増大
し、多大な放熱効果が得られる。(5) When fins or irregularities are formed on the surface of the radiator plate, or when a radiator plate is formed by laminating a plurality of thin plates at predetermined intervals, the total surface area of the radiator plate increases. A great heat dissipation effect can be obtained.
【図１】本発明の一実施形態例を示す斜視図。FIG. 1 is a perspective view showing an embodiment of the present invention.
【図２】トランジスタの内部構造を示す構成図。FIG. 2 is a configuration diagram illustrating an internal structure of a transistor.
【図３】トランジスタのリード部の温度分布を示す説明
図。FIG. 3 is an explanatory diagram illustrating a temperature distribution of a lead portion of a transistor.
【図４】本発明の他の実施形態例を示す要部説明図。FIG. 4 is an explanatory view of a main part showing another embodiment of the present invention.
【図５】本発明の他の実施形態例を示す要部構成図。FIG. 5 is a main part configuration diagram showing another embodiment of the present invention.
【図６】本発明の他の実施形態例を示す要部断面図。FIG. 6 is a sectional view of a main part showing another embodiment of the present invention.
【図７】本発明をトランジスタに適用した場合の等価熱
抵抗による放熱経路を示す説明図。FIG. 7 is an explanatory diagram showing a heat radiation path based on equivalent thermal resistance when the present invention is applied to a transistor.
１…基板、２…トランジスタ、２ａ，２ｂ，２ｃ…リー
ド脚、３，１３，２３…放熱板、３ａ…圧入部、２０…
フィン、ＲL…リード部放熱板による熱抵抗。DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Transistor, 2a, 2b, 2c ... Lead leg, 3, 13, 23 ... Heat sink, 3a ... Press-fit part, 20 ...
Fin, R L … Thermal resistance due to the radiator plate of the lead.
Claims (24)
が基板の導電材に接着された電子デバイスにおいて、前
記リード部のうち、高温となるリード部に直接取り付け
られた放熱板を備えたことを特徴とする電子デバイスの
放熱機構。1. An electronic device mounted on a substrate and having a lead portion adhered to a conductive material of the substrate, wherein the electronic device includes a heat sink directly attached to a high-temperature lead portion of the lead portions. A heat dissipation mechanism for an electronic device, characterized in that:
圧入により取り付けられていることを特徴とする請求項
１に記載の電子デバイスの放熱機構。2. The heat radiating mechanism for an electronic device according to claim 1, wherein said heat radiating plate is attached by press-fitting to said high-temperature lead portion.
を取り付けるリード部と放熱板を取り付けないリード部
との間隔が物理上可能な最長間隔となるように形成され
ていることを特徴とする請求項１に記載の電子デバイス
の放熱機構。3. The electronic device according to claim 1, wherein the lead portion of the electronic device is formed such that a distance between a lead portion to which a heat sink is attached and a lead portion to which no heat sink is attached is the longest physically possible interval. A heat radiation mechanism for an electronic device according to claim 1.
を取り付けるリード部と放熱板を取り付けないリード部
との間隔が物理上可能な最長間隔となるように形成され
ていることを特徴とする請求項２に記載の電子デバイス
の放熱機構。4. The electronic device according to claim 1, wherein a lead portion of the electronic device is formed such that a distance between a lead portion to which a heat sink is attached and a lead portion to which no heat sink is attached is the longest physically possible interval. A heat dissipation mechanism for an electronic device according to claim 2.
とを特徴とする請求項１に記載の電子デバイスの放熱機
構。5. The heat radiating mechanism for an electronic device according to claim 1, wherein the heat radiating plate is a ring-shaped heat radiating plate.
とを特徴とする請求項２に記載の電子デバイスの放熱機
構。6. The heat radiating mechanism for an electronic device according to claim 2, wherein the heat radiating plate is a ring-shaped heat radiating plate.
とを特徴とする請求項３に記載の電子デバイスの放熱機
構。7. The heat radiating mechanism for an electronic device according to claim 3, wherein the heat radiating plate is a ring-shaped heat radiating plate.
とを特徴とする請求項４に記載の電子デバイスの放熱機
構。8. The heat radiating mechanism for an electronic device according to claim 4, wherein the heat radiating plate is a ring-shaped heat radiating plate.
ことを特徴とする請求項１に記載の電子デバイスの放熱
機構。9. The heat radiating mechanism for an electronic device according to claim 1, wherein the heat radiating plate is a rectangular parallelepiped radiating plate.
ることを特徴とする請求項２に記載の電子デバイスの放
熱機構。10. The heat radiating mechanism of an electronic device according to claim 2, wherein the heat radiating plate is a rectangular parallelepiped radiating plate.
ることを特徴とする請求項３に記載の電子デバイスの放
熱機構。11. The heat radiating mechanism for an electronic device according to claim 3, wherein the heat radiating plate is a rectangular parallelepiped radiating plate.
ることを特徴とする請求項４に記載の電子デバイスの放
熱機構。12. The heat radiating mechanism of an electronic device according to claim 4, wherein the heat radiating plate is a rectangular parallelepiped heat radiating plate.
成されていることを特徴とする請求項１に記載の電子デ
バイスの放熱機構。13. The heat radiating mechanism for an electronic device according to claim 1, wherein the heat radiating plate has a fin on a surface.
成されていることを特徴とする請求項２に記載の電子デ
バイスの放熱機構。14. The heat radiating mechanism for an electronic device according to claim 2, wherein the heat radiating plate has a fin on a surface.
成されていることを特徴とする請求項３に記載の電子デ
バイスの放熱機構。15. The heat radiating mechanism for an electronic device according to claim 3, wherein the heat radiating plate has a fin on a surface.
成されていることを特徴とする請求項４に記載の電子デ
バイスの放熱機構。16. The heat radiating mechanism for an electronic device according to claim 4, wherein the heat radiating plate has a fin on a surface.
成されていることを特徴とする請求項１に記載の電子デ
バイスの放熱機構。17. The heat radiating mechanism for an electronic device according to claim 1, wherein the heat radiating plate is formed to have an uneven portion on a surface.
成されていることを特徴とする請求項２に記載の電子デ
バイスの放熱機構。18. The heat radiating mechanism for an electronic device according to claim 2, wherein the heat radiating plate is formed to have an uneven portion on a surface.
成されていることを特徴とする請求項３に記載の電子デ
バイスの放熱機構。19. The heat radiating mechanism of an electronic device according to claim 3, wherein the heat radiating plate is formed to have an uneven portion on a surface.
成されていることを特徴とする請求項４に記載の電子デ
バイスの放熱機構。20. The heat radiating mechanism for an electronic device according to claim 4, wherein the heat radiating plate is formed to have an uneven portion on a surface.
に積層して形成されていることを特徴とする請求項１に
記載の電子デバイスの放熱機構。21. The heat radiating mechanism for an electronic device according to claim 1, wherein the heat radiating plate is formed by laminating a plurality of thin plates at predetermined intervals.
に積層して形成されていることを特徴とする請求項２に
記載の電子デバイスの放熱機構。22. The heat radiating mechanism for an electronic device according to claim 2, wherein the heat radiating plate is formed by laminating a plurality of thin plates at predetermined intervals.
に積層して形成されていることを特徴とする請求項３に
記載の電子デバイスの放熱機構。23. The heat radiating mechanism for an electronic device according to claim 3, wherein said heat radiating plate is formed by laminating a plurality of thin plates at predetermined intervals.
に積層して形成されていることを特徴とする請求項４に
記載の電子デバイスの放熱機構。24. The heat radiating mechanism for an electronic device according to claim 4, wherein said heat radiating plate is formed by laminating a plurality of thin plates at predetermined intervals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10346374A JP2000174181A (en) | 1998-12-07 | 1998-12-07 | Heat radiation mechanism for electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10346374A JP2000174181A (en) | 1998-12-07 | 1998-12-07 | Heat radiation mechanism for electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000174181A true JP2000174181A (en) | 2000-06-23 |
Family
ID=18382997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10346374A Pending JP2000174181A (en) | 1998-12-07 | 1998-12-07 | Heat radiation mechanism for electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000174181A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008112932A (en) * | 2006-10-31 | 2008-05-15 | Nippon Steel Corp | Connecting lead for semiconductor device |
-
1998
- 1998-12-07 JP JP10346374A patent/JP2000174181A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008112932A (en) * | 2006-10-31 | 2008-05-15 | Nippon Steel Corp | Connecting lead for semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4159861B2 (en) | Method for manufacturing heat dissipation structure of printed circuit board | |
| US7031164B2 (en) | Electronic circuit device including heat-generating element mounted on circuit board | |
| JP2006080168A (en) | Heat dissipation structure of printed wiring board | |
| JP3733783B2 (en) | Module having heat dissipation structure of heating element | |
| JP2725448B2 (en) | Semiconductor device | |
| JP2001168476A (en) | Radiation structure on circuit substrate | |
| US4950843A (en) | Mounting structure for semiconductor device | |
| JP2000174181A (en) | Heat radiation mechanism for electronic device | |
| KR101155645B1 (en) | Heat spreading printed circuit board and method for fabricating the same | |
| JPH05259669A (en) | Heat radiating structure of printed wiring board | |
| JP3421137B2 (en) | Bare chip mounting structure and heat sink | |
| KR100373936B1 (en) | Heat discharging structure for power module | |
| JP2021111718A (en) | Electronic apparatus | |
| JP2798464B2 (en) | Power amplification module structure | |
| JP2003046211A (en) | Electronic component mounting structure | |
| JP2002094196A (en) | Electronic part heat dissipating structure of printed wiring board | |
| JP2019161063A (en) | Heat dissipation structure of electronic component | |
| JP2684893B2 (en) | Hybrid integrated circuit device | |
| JP2006135202A (en) | Heat radiating structure for electronic appliance | |
| JPH0648863Y2 (en) | Integrated circuit cooling structure | |
| JPH03177095A (en) | Method of dissipating heat of electronic component | |
| JPH0563053U (en) | Hybrid integrated circuit board | |
| JP3013666B2 (en) | Semiconductor device | |
| JPH0648902Y2 (en) | Frame ground structure of metal board | |
| JP2007227780A (en) | Wiring structure of semiconductor component |