JP2000169281A - Apparatus for pulling crystal substance - Google Patents

Apparatus for pulling crystal substance

Info

Publication number
JP2000169281A
JP2000169281A JP10346426A JP34642698A JP2000169281A JP 2000169281 A JP2000169281 A JP 2000169281A JP 10346426 A JP10346426 A JP 10346426A JP 34642698 A JP34642698 A JP 34642698A JP 2000169281 A JP2000169281 A JP 2000169281A
Authority
JP
Japan
Prior art keywords
crucible
raw material
crystal
pulling
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10346426A
Other languages
Japanese (ja)
Inventor
Kuraichi Shimomura
庫一 下村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Priority to JP10346426A priority Critical patent/JP2000169281A/en
Publication of JP2000169281A publication Critical patent/JP2000169281A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To reduce effects of radiant heat on a pulled crystal substance and raise the pulling speed of the crystal substance by installing a heat insulating material on the outer peripheral surface of a melting crucible located above a filling zone for a raw material melt just before starting the pulling of the crystal substance. SOLUTION: A graphite crucible 2 is arranged on the inside of a graphite heater 1 as a heat source for feeding thermal energy to a quartz glass crucible 3 as a crucible for melting a raw material and the quartz glass crucible 3 is held in the interior of the graphite crucible 2. A raw material melt 4 is stored in the interior of the quartz glass crucible 3 and a crystal substance 5 is pulled from the melt 4. An annular heat insulator 6 ending at a position just above the liquid surface of the raw material melt 4 just before the pulling and protruding upward therefrom is installed to cover the outer peripheral surface of the quartz glass crucible 3. Thereby, a great heat load is applied to a lower part of the graphite crucible 2, i.e., a part for retaining the temperature of the raw material melt 4 and a small heat load is applied to the part of the crystal substance 5. Thereby, the large temperature gradient in the pulling shaft direction can be ensured.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、チョクラルスキー
法(CZ法)による半導体単結晶等の結晶体引上げ装置
に係り、特に高純度で均質な結晶体を製造する結晶体引
上げ装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal pulling apparatus for a semiconductor single crystal or the like by the Czochralski method (CZ method), and more particularly to a crystal pulling apparatus for producing a high-purity and homogeneous crystal. is there.

【0002】[0002]

【従来の技術】半導体単結晶の育成には、ルツボ内の原
料融液から円柱状の結晶を育成するCZ法が用いられて
いる。この単結晶の育成に於いて結晶の大径化が進む
と、それに伴い炉内部品のサイズも大きくなる。ルツボ
径が大きくなると融液表面からの熱損失も大きくなるた
め、これを補うために抵抗加熱ヒーターの電力値も大き
くなる。このため、抵抗加熱ヒーターからの輻射熱が結
晶に当たり、結晶引上軸方向の温度勾配が小さくなり、
単結晶の引上速度が上がらず生産性が悪いという問題が
あった。従来、この種問題を解決するために、熱輻射板
を結晶を囲繞するように配設し、抵抗加熱ヒーターから
の輻射が直接結晶に照射されないようにして来た。
2. Description of the Related Art For growing a semiconductor single crystal, a CZ method for growing a columnar crystal from a raw material melt in a crucible is used. As the diameter of the crystal increases during the growth of the single crystal, the size of parts in the furnace also increases. As the crucible diameter increases, the heat loss from the melt surface also increases, and the electric power of the resistance heater also increases to compensate for this. For this reason, the radiant heat from the resistance heater hits the crystal, and the temperature gradient in the crystal pulling axis direction decreases,
There was a problem that the pulling speed of the single crystal was not increased and the productivity was poor. Conventionally, in order to solve this kind of problem, a heat radiation plate has been arranged so as to surround the crystal so that radiation from a resistance heater is not directly irradiated to the crystal.

【0003】一方、実公平3−43250号公報には、
CZ法に用いられるルツボであって、円筒状の炭素繊維
強化炭素材で構成された側壁部分と黒鉛材で構成された
台座部分を着脱自在に組み合わせた構造のルツボが開示
されている。
On the other hand, Japanese Utility Model Publication No. 3-43250 discloses that
A crucible used in the CZ method, which has a structure in which a side wall portion made of a cylindrical carbon fiber reinforced carbon material and a pedestal portion made of a graphite material are removably combined, is disclosed.

【0004】[0004]

【発明が解決しようとする課題】従来の熱輻射板で結晶
を囲繞する方法にあっては、熱輻射板の断熱性が完全で
ない限り、抵抗加熱ヒーターの輻射により熱輻射板の結
晶側表面温度が上昇し、それに伴って結晶引上軸方向の
温度勾配を小さくするといった欠点があった。
In the conventional method of surrounding a crystal with a heat radiating plate, the surface temperature of the crystal of the heat radiating plate on the side of the heat radiating plate is radiated by the resistance heater unless the heat insulating property of the heat radiating plate is perfect. And the temperature gradient in the direction of the crystal pulling axis is reduced accordingly.

【0005】また、上記実公平3−43250号公報に
開示のルツボは、側壁部分が黒鉛材よりは断熱性に富む
炭素繊維強化炭素材で構成されており、その分だけ結晶
への熱の輻射は少なくはなるが、原料素材を溶解そして
溶融状態に保持するために必要な熱までも遮られるとい
う欠点があるし、元来このルツボは同公報にも明記され
ているが如く、冷却過程で黒鉛ルツボが破損する事態を
防ぎ、ルツボ自体の肉厚を薄くし軽量化を図るというも
のであり、本発明とはその意図するところが異なる。
In the crucible disclosed in Japanese Utility Model Publication No. 3-43250, the side wall portion is made of carbon fiber reinforced carbon material which is more heat-insulating than graphite material, and heat is radiated to the crystal by that much. However, the crucible has the drawback that it also blocks the heat necessary to melt the raw material and maintain it in a molten state, and this crucible was originally specified in the same publication as the cooling process. The purpose is to prevent the graphite crucible from being damaged, to reduce the thickness of the crucible itself and to reduce the weight, and the intention is different from the present invention.

【0006】本発明は、引上結晶体の大径化が進み、ル
ツボの径が大きくなっても、原料融液の温度を保持する
ための電力が必要以上に消費されることなく、引上結晶
体への輻射熱の影響を少なくし、結晶体の引上げ速度を
高めることにより生産性を向上させることを目的とする
ものである。
According to the present invention, even if the diameter of the pulled crystal is increased and the diameter of the crucible is enlarged, the power for maintaining the temperature of the raw material melt is not consumed more than necessary, and An object of the present invention is to improve the productivity by reducing the influence of radiant heat on the crystal and increasing the pulling speed of the crystal.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するため
に、本発明の結晶体引上げ装置にあっては、黒鉛ルツボ
に保持した原料溶融ルツボと、前記黒鉛ルツボを囲繞し
て設けられ、原料溶融ルツボに熱エネルギーを供給する
熱源と、熱源からの熱エネルギーによって溶融された原
料融液中より結晶体を引き上げるための引上げ機構と、
を含んで構成される結晶体引上げ装置であって、結晶体
引上げ開始直前における原料融液充填域より上方に位置
する前記溶融ルツボの外周面に断熱材を設けた結晶体引
上げ装置である。
In order to achieve the above object, in a crystal pulling apparatus according to the present invention, a raw material melting crucible held in a graphite crucible and a raw material melting crucible provided around the graphite crucible are provided. A heat source for supplying heat energy to the melting crucible, a pulling mechanism for pulling a crystal from the raw material melt melted by the heat energy from the heat source,
, Wherein a heat insulating material is provided on the outer peripheral surface of the molten crucible located above the raw material melt filling area immediately before the start of the crystal pulling.

【0008】また、もう1つの結晶体引上げ装置として
は、黒鉛ルツボに保持した原料溶融ルツボと、前記黒鉛
ルツボを囲繞して設けられ、原料溶融ルツボに熱エネル
ギーを供給する熱源と、熱源からの熱エネルギーによっ
て溶融された原料融液中より結晶体を引き上げるための
引上げ機構と、を含んで構成される結晶体引上げ装置で
あって、結晶体引上げ直前における原料融液充填域より
上方に位置する前記黒鉛ルツボの内周面に断熱材を設け
た結晶体引上げ装置である。
Further, as another crystal pulling apparatus, a raw material melting crucible held in a graphite crucible, a heat source provided to surround the graphite crucible and supplying thermal energy to the raw material melting crucible, and a heat source from the heat source are provided. A pulling mechanism for pulling a crystal from the raw material melt melted by thermal energy, wherein the pulling mechanism is located above a raw material melt filling area immediately before the pulling of the crystal. A crystal pulling apparatus in which a heat insulating material is provided on an inner peripheral surface of the graphite crucible.

【0009】そして上記2つの結晶体引上げ装置でそれ
ぞれ用いる断熱材としては、カーボン・カーボンファイ
バーコンポジット材が好ましい。即ち、この種の材料は
高純度の物が入手可能であり、また材機的強度も大き
く、カーボンファイバーの積層方向に直角な方向の熱伝
導率は通常の黒鉛ルツボを構成するカーボンの数分の一
である。コーティングされた炭素繊維製フェルト材ある
いはカーボン材に周囲を囲まれた炭素繊維製フェルト材
を用いることも考えられるが、結晶体引上げ中の石英ル
ツボの変形により、応力を受けて破損する。また、セラ
ミック系の断熱材は、石英ガラスと反応したり、カーボ
ンにより還元され、結晶体を汚染する可能性が高いため
用いない方がよい。
The heat insulating material used in each of the two crystal pulling apparatuses is preferably a carbon / carbon fiber composite material. That is, this kind of material is available in high purity, has high mechanical strength, and has thermal conductivity in the direction perpendicular to the laminating direction of carbon fiber which is several minutes smaller than that of carbon constituting a normal graphite crucible. It is one of Although it is conceivable to use a coated carbon fiber felt material or a carbon fiber felt material surrounded by a carbon material, the quartz crucible is deformed during pulling of the crystal and is damaged by stress. Further, a ceramic heat insulating material is not preferably used because it has a high possibility of reacting with quartz glass or being reduced by carbon and contaminating the crystal.

【0010】[0010]

【発明の実施の形態】以下発明の実施の形態を図面を参
酌しながら説明し、本発明の理解に供する。図1は、本
発明結晶体引上げ装置の概要を示す断面図であり、原料
溶融用ルツボとしての石英ガラスルツボ3に熱エネルギ
ーを供給する熱源としての黒鉛ヒーター1の内側に黒鉛
ルツボ2が配設され、該黒鉛ルツボ2の内部には前記の
石英ガラスルツボ3が保持されている。そして石英ガラ
スルツボ3内には原料融液4が貯められており、該原料
融液4から結晶体5が、引上げ機構100により引上げ
られる。なお、引上げ機構100は種結晶保治器12,
ケーブル11およびケーブル巻上げドラム10等により
構成されている。上記黒鉛ルツボ2は、引上げ直前にお
ける原料融液4の液面直上で終わり、それより上方へ突
出している石英ガラスルツボ3の外周面には、図2にも
示すような円環状の断熱材6が覆設されている。なお、
図1中符号7は本発明とは直接関わりはないが、結晶体
5への周囲からの輻射熱を遮る熱遮蔽板である。ここ
で、上記結晶体5の引上げ機構の一例を図3を参照し乍
ら説明する。この引上げ機構は、上述の図1で示した原
料溶融用ルツボとしての石英ガラスルツボ3及びその周
囲の部材を包み込み、上方へ伸延される真空チャンバー
8の上部に設置された巻上モーター9に連結されたケー
ブル巻上ドラム10から吊下されたケーブル11の下部
に、種結晶保持器12を装着し、同種結晶保持器12の
下方に取付けた種結晶13を、図1にも示した原料融液
4に浸し、それを引上げる機構である。図3中符号14
はルツボ軸回転駆動用モーターを、又符号15はルツボ
軸上下駆動用モーターをそれぞれ示す。結晶の引上速度
は、主として固液界面付近の結晶体引上げ軸方向の温度
勾配に略比例する。この温度勾配を大きくするために
は、ヒーターからの輻射熱を結晶に与えないようにす
る、融液表面からの輻射熱を結晶に与えないようにす
るという方策がある。この際、熱輻射板のみではヒータ
ー及び融液表面からの輻射熱によって、熱輻射板自体が
熱を持ち、結晶体を冷却出来ないという難点があった。
それを本発明では図1に示した如く、原料融液4より上
部の石英ガラスルツボ3の外周面を断熱材6で覆ってい
るので、図1中矢印で示す様に熱負荷は黒鉛ルツボ2の
下部即ち原料融液4の温度を保持すべき部分には大きく
掛かり、結晶体5部分へは小さく掛かる事で解消され
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The embodiments of the present invention will be described below with reference to the drawings to provide an understanding of the present invention. FIG. 1 is a cross-sectional view showing an outline of a crystal pulling apparatus of the present invention. A graphite crucible 2 is disposed inside a graphite heater 1 as a heat source for supplying thermal energy to a quartz glass crucible 3 as a raw material melting crucible. The quartz glass crucible 3 is held inside the graphite crucible 2. The raw material melt 4 is stored in the quartz glass crucible 3, and the crystal 5 is pulled up from the raw material melt 4 by the pulling mechanism 100. The pulling mechanism 100 includes a seed crystal jig 12,
It comprises a cable 11, a cable winding drum 10, and the like. The graphite crucible 2 terminates immediately above the liquid surface of the raw material melt 4 immediately before being pulled up, and has an annular heat insulating material 6 as shown in FIG. Is covered. In addition,
Reference numeral 7 in FIG. 1 is a heat shielding plate that does not directly relate to the present invention, but blocks radiant heat from surroundings to the crystal body 5. Here, an example of a pulling mechanism of the crystal 5 will be described with reference to FIG. This pulling mechanism encloses the quartz glass crucible 3 as the crucible for melting the raw material shown in FIG. 1 and members around the quartz glass crucible, and is connected to a hoisting motor 9 installed above a vacuum chamber 8 extending upward. A seed crystal holder 12 is attached to the lower part of the cable 11 suspended from the cable hoisting drum 10, and the seed crystal 13 attached below the same seed crystal holder 12 is removed from the raw material melt shown in FIG. This is a mechanism that is immersed in the liquid 4 and pulled up. Reference numeral 14 in FIG.
Denotes a crucible shaft rotation driving motor, and reference numeral 15 denotes a crucible shaft vertical driving motor. The crystal pulling speed is substantially proportional to the temperature gradient mainly in the crystal pulling axial direction near the solid-liquid interface. In order to increase the temperature gradient, there are measures to prevent radiant heat from the heater from being applied to the crystal and to prevent radiant heat from the melt surface from being applied to the crystal. At this time, the heat radiation plate alone has a disadvantage that the heat radiation plate itself has heat due to radiant heat from the heater and the surface of the melt, and the crystal cannot be cooled.
In the present invention, as shown in FIG. 1, since the outer peripheral surface of the quartz glass crucible 3 above the raw material melt 4 is covered with the heat insulating material 6, the heat load is reduced as shown by the arrow in FIG. , That is, the portion where the temperature of the raw material melt 4 is to be maintained is large, and the portion where the temperature of the crystal 5 is small is solved.

【0011】次に他の実施の形態として、図4に示す様
に、黒鉛のルツボ2の上部1/3〜1/4の部分の肉厚
を1/2程度にして、その内側に円環状の断熱材6を嵌
めた如き構成の単結晶引上げ装置がある。
Next, as another embodiment, as shown in FIG. 4, the thickness of the upper 1/3 to 1/4 portion of the graphite crucible 2 is reduced to about 1/2, and an annular ring is formed inside the crucible. There is a single crystal pulling apparatus having a configuration in which the heat insulating material 6 is fitted.

【0012】上記断熱部材6の構成を図5に断面図で示
すが、この断熱材としてはカーボン・カーボンファイバ
ーコンポジット材6−1が最適であり、該カーボン・カ
ーボンファイバーコンポジット材を、図1に示す様な装
置に用いることにより、従来0.7〜0.8mm/min.で
あった結晶引上げ速度が、0.9mm/min.に向上した。
ちなみにこの場合のテスト概要は、断熱材の内径560
mm、高さ70mm、厚み10mmで評価した。
FIG. 5 is a cross-sectional view showing the structure of the heat insulating member 6. As the heat insulating material, a carbon / carbon fiber composite material 6-1 is optimal, and the carbon / carbon fiber composite material is shown in FIG. By using the apparatus as shown, the crystal pulling speed, which was conventionally 0.7 to 0.8 mm / min., Was improved to 0.9 mm / min.
By the way, the test outline in this case is 560
mm, height 70 mm, thickness 10 mm.

【0013】[0013]

【発明の効果】以上述べて来た如く、本発明によれば、
結晶体の引上げ開始直前における原料融液の表面より上
部にある石英ガラスルツボの外周面のみを断熱材で構成
し、それよりも下部は黒鉛ルツボが存在するので、融液
の温度を保持するするのに必要十分な熱負荷は融液にも
与えつつも、結晶には不必要な熱負荷を与えることがな
いので、結晶引上げ軸方向の温度勾配を大きくとること
が出来、引上げ速度を大きくすることにより生産性の向
上を図れるという効果を奏するものである。また本発明
で用いる断熱材の素材は、通常の黒鉛材と比較して、強
度が大であるため薄肉化しても破割されないという特長
がある。
As described above, according to the present invention,
Only the outer peripheral surface of the quartz glass crucible above the surface of the raw material melt immediately before the start of crystal pulling is composed of a heat insulating material, and the graphite crucible below it is used to maintain the temperature of the melt. In addition to applying the necessary and sufficient heat load to the melt, it does not apply unnecessary heat load to the crystal, so that the temperature gradient in the crystal pulling axial direction can be increased and the pulling speed can be increased. This has the effect of improving productivity. Further, the material of the heat insulating material used in the present invention has a feature that it is not broken even if it is made thinner because it has a higher strength than a normal graphite material.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態に係る装置の概要を示す
断面図である。
FIG. 1 is a sectional view showing an outline of an apparatus according to an embodiment of the present invention.

【図2】本発明の一実施の形態に係る断熱材の斜視図で
ある。
FIG. 2 is a perspective view of a heat insulating material according to one embodiment of the present invention.

【図3】本発明の一実施の形態に係る装置で用いる引上
げ機構の概要図である。
FIG. 3 is a schematic diagram of a pulling mechanism used in the device according to one embodiment of the present invention.

【図4】本発明の他の実施の形態に係る装置の要部断面
図である。
FIG. 4 is a sectional view of a main part of an apparatus according to another embodiment of the present invention.

【図5】本発明で用いる断熱材の断面図である。FIG. 5 is a sectional view of a heat insulating material used in the present invention.

【符号の説明】[Explanation of symbols]

1 黒鉛ヒーター 2 黒鉛ルツボ 3 石英ガラスルツボ 4 原料融液 5 結晶体 6 断熱材 7 熱遮蔽板 8 真空チャンバー 9 巻上モーター 10 ケーブル巻上ドラム 11 ケーブル 12 種結晶保持器 13 種結晶 14 ルツボ軸回転駆動用モーター 15 ルツボ軸上下駆動用モーター 100 巻上げ機構 DESCRIPTION OF SYMBOLS 1 Graphite heater 2 Graphite crucible 3 Quartz glass crucible 4 Raw material melt 5 Crystal 6 Thermal insulation 7 Heat shielding plate 8 Vacuum chamber 9 Winding motor 10 Cable winding drum 11 Cable 12 Seed crystal holder 13 Seed crystal 14 Rotation of crucible shaft Driving motor 15 Crucible shaft vertical driving motor 100 Winding mechanism

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 黒鉛ルツボに保持した原料溶融ルツボ
と、前記黒鉛ルツボを囲繞して設けられ、原料溶融ルツ
ボに熱エネルギーを供給する熱源と、熱源からの熱エネ
ルギーによって溶融された原料融液中より結晶体を引き
上げるための引上げ機構と、を含んで構成される結晶体
引上げ装置であって、結晶体引上げ開始直前における原
料融液充填域より上方に位置する前記原料溶融ルツボの
外周面に断熱材を設けたことを特徴とする結晶体引上げ
装置。
1. A raw material melting crucible held by a graphite crucible, a heat source provided surrounding the graphite crucible and supplying thermal energy to the raw material melting crucible, and a raw material melt melted by the heat energy from the heat source A pulling mechanism for pulling up the crystal further, comprising: a heat-insulating system for the raw material melting crucible located above the raw material melt filling area immediately before the start of the crystal pulling. A crystal pulling device comprising a material.
【請求項2】 黒鉛ルツボに保持した原料溶融ルツボ
と、前記黒鉛ルツボを囲繞して設けられ、原料溶融ルツ
ボに熱エネルギーを供給する熱源と、熱源からの熱エネ
ルギーによって溶融された原料融液中より結晶体を引き
上げるための引上げ機構と、を含んで構成される結晶体
引上げ装置であって、結晶体引上げ直前における原料融
液充填域より上方に位置する前記黒鉛ルツボの内周面に
断熱材を設けたことを特徴とする結晶体引上げ装置。
2. A raw material melting crucible held by a graphite crucible, a heat source provided surrounding the graphite crucible and supplying thermal energy to the raw material melting crucible, and a raw material melt melted by the thermal energy from the heat source. A pulling mechanism for pulling up the crystal further, comprising a heat insulating material on an inner peripheral surface of the graphite crucible located above a raw material melt filling area immediately before the crystal pulling. A crystal pulling device comprising:
【請求項3】 上記断熱材が、カーボン・カーボンファ
イバーコンポジット材を素材とすることを特徴とする請
求項1又は2記載の結晶体引上げ装置。
3. The crystal pulling apparatus according to claim 1, wherein the heat insulating material is made of a carbon / carbon fiber composite material.
JP10346426A 1998-12-07 1998-12-07 Apparatus for pulling crystal substance Pending JP2000169281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10346426A JP2000169281A (en) 1998-12-07 1998-12-07 Apparatus for pulling crystal substance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10346426A JP2000169281A (en) 1998-12-07 1998-12-07 Apparatus for pulling crystal substance

Publications (1)

Publication Number Publication Date
JP2000169281A true JP2000169281A (en) 2000-06-20

Family

ID=18383349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10346426A Pending JP2000169281A (en) 1998-12-07 1998-12-07 Apparatus for pulling crystal substance

Country Status (1)

Country Link
JP (1) JP2000169281A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8048221B2 (en) 2006-01-20 2011-11-01 Stoddard Nathan G Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
US8440157B2 (en) 2007-07-20 2013-05-14 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
US8591649B2 (en) 2007-07-25 2013-11-26 Advanced Metallurgical Group Idealcast Solar Corp. Methods for manufacturing geometric multi-crystalline cast materials
JP2014043375A (en) * 2012-08-27 2014-03-13 Shin Etsu Handotai Co Ltd Graphite crucible
US8709154B2 (en) 2007-07-25 2014-04-29 Amg Idealcast Solar Corporation Methods for manufacturing monocrystalline or near-monocrystalline cast materials
JP2021195298A (en) * 2020-06-16 2021-12-27 エスケイシー・カンパニー・リミテッドSkc Co., Ltd. Silicon carbide ingot, wafer and method of manufacturing the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8048221B2 (en) 2006-01-20 2011-11-01 Stoddard Nathan G Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
US8628614B2 (en) 2006-01-20 2014-01-14 Amg Idealcast Solar Corporation Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
US8951344B2 (en) 2006-01-20 2015-02-10 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics
US8440157B2 (en) 2007-07-20 2013-05-14 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
US8591649B2 (en) 2007-07-25 2013-11-26 Advanced Metallurgical Group Idealcast Solar Corp. Methods for manufacturing geometric multi-crystalline cast materials
US8709154B2 (en) 2007-07-25 2014-04-29 Amg Idealcast Solar Corporation Methods for manufacturing monocrystalline or near-monocrystalline cast materials
JP2014043375A (en) * 2012-08-27 2014-03-13 Shin Etsu Handotai Co Ltd Graphite crucible
JP2021195298A (en) * 2020-06-16 2021-12-27 エスケイシー・カンパニー・リミテッドSkc Co., Ltd. Silicon carbide ingot, wafer and method of manufacturing the same
JP7161784B2 (en) 2020-06-16 2022-10-27 セニック・インコーポレイテッド Silicon carbide ingot, wafer and manufacturing method thereof

Similar Documents

Publication Publication Date Title
CN110983429A (en) Single crystal furnace and monocrystalline silicon preparation method
JP6302192B2 (en) Single crystal growth apparatus and method
CN105887186A (en) Silicon single-crystal pulling equipment and growing method
KR20110094025A (en) Upper heater for manufacturing single crystal, single crystal manufacturing apparatus and single crystal manufacturing method
JP2000169281A (en) Apparatus for pulling crystal substance
JP2014080302A (en) Single crystal pulling apparatus and single crystal pulling method
JPS6153187A (en) Device for growing single crystal
JP7113478B2 (en) Crucible and Single Crystal Growth Apparatus and Growth Method
JP4161655B2 (en) Crystal manufacturing heater, crystal manufacturing apparatus, and crystal manufacturing method
KR101596550B1 (en) Apparutus and Method for Growing Ingot
JPH10167876A (en) Device for producing crystal by cz method
KR101756687B1 (en) Single crystal manufacturing device and single crystal manufacturing method
JP2011116600A (en) Apparatus for producing single crystal and method for producing single crystal
JP3734004B2 (en) Graphite crucible for pulling silicon single crystal
JP2001010890A (en) Single crystal pulling device
JP2000016895A (en) Graphite crucible
JP3642174B2 (en) Silicon single crystal pulling apparatus and pulling method thereof
JPH03193694A (en) Crystal growing device
JPH06340493A (en) Apparatus for growing single crystal and growing method
JP2001002490A (en) Single crystal pulling up device
JP2533864Y2 (en) Single crystal pulling device
JP2558171Y2 (en) Heat shield for single crystal pulling
JPH026382A (en) Apparatus for pulling up single crystal
KR100488903B1 (en) An apparatus for growing silicon single crystals
JP2000247780A (en) Single crystal puller

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051117

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20060710

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20060710

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080415

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080418

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080529

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080930