JP2000164935A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JP2000164935A JP2000164935A JP33566598A JP33566598A JP2000164935A JP 2000164935 A JP2000164935 A JP 2000164935A JP 33566598 A JP33566598 A JP 33566598A JP 33566598 A JP33566598 A JP 33566598A JP 2000164935 A JP2000164935 A JP 2000164935A
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light
- light emitting
- chip
- transparent member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は発光ダイオードに
関し、とくに、通電しない期間にも発光可能な発光ダイ
オードに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-emitting diode, and more particularly, to a light-emitting diode that can emit light even during a non-energized period.
【０００２】[0002]
【従来の技術】従来のこのような発光ダイオードは、発
光ダイオードチップを内部に保持する円筒状の樹脂製ハ
ウジングと、ハウジングの上端部に固設される半球状の
レンズ部とを備え、ハウジングの外周面に夜光塗料を塗
布し、暗所においても夜光塗料の作用により発光ダイオ
ードの存在位置を確認できるようにしたものが知られて
いる（例えば、特開平１−２３８０７３号公報参照）。2. Description of the Related Art Such a conventional light emitting diode includes a cylindrical resin housing for holding a light emitting diode chip therein, and a hemispherical lens portion fixed to an upper end of the housing. It is known that a luminous paint is applied to the outer peripheral surface so that the location of the light emitting diode can be confirmed by the action of the luminous paint even in a dark place (for example, see Japanese Patent Application Laid-Open No. 1-238073).
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
このような発光ダイオードは、ハウジングの外周に塗布
した夜光塗料の光によって発光ダイオードの存在位置を
確認する程度のものであって、非通電時に積極的に発光
させて発光ダイオードの省電力化をはかろうとするもの
ではない。However, such a conventional light emitting diode is of such a type that the position of the light emitting diode is confirmed only by the light of the luminous paint applied to the outer periphery of the housing. It is not intended to reduce the power consumption of the light emitting diode by causing the light to emit light.
【０００４】この発明は、このような事情を考慮してな
されたもので、発光ダイオードチップから発光される光
を蓄光型蛍光剤を含む透明部材に透過させ、それによっ
てチップの通電停止後も、蓄光型蛍光剤によって発光を
継続する発光ダイオードを提供するものである。The present invention has been made in view of such circumstances, and allows light emitted from a light-emitting diode chip to pass through a transparent member containing a phosphorescent phosphor, so that even after the chip is de-energized, An object of the present invention is to provide a light emitting diode that emits light continuously by a phosphorescent phosphor.
【０００５】[0005]
【課題を解決するための手段】この発明は、発光ダイオ
ードチップと、前記チップの近傍に設けられ前記チップ
の発する光を透過させる透明部材と、前記透明部材中に
分散して含まれる蓄光型蛍光剤粒子からなる発光ダイオ
ードを提供するものである。According to the present invention, there is provided a light emitting diode chip, a transparent member provided near the chip and transmitting light emitted from the chip, and a phosphorescent fluorescent light dispersed and contained in the transparent member. A light emitting diode comprising agent particles is provided.
【０００６】[0006]
【発明の実施の形態】この発明において発光ダイオード
チップは蓄光型蛍光剤を励起しうる波長の光を発光する
必要があるところから、その発光色つまり光の波長は蓄
光型蛍光剤の種類によって決定される。DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, since a light emitting diode chip needs to emit light having a wavelength that can excite a phosphorescent fluorescent agent, its emission color, that is, the wavelength of light, is determined by the type of phosphorescent fluorescent agent. Is done.
【０００７】蓄光型蛍光剤には、例えばＳｒＡｌ2Ｏ4や
ＺｎＳ：Ｃｕなどが用いられるが、これらの励起光波長
は２００〜４５０ｎｍである。従ってこの場合、発光ダ
イオードチップには、例えばピーク波長が４３０ｎｍの
窒化ガリウム系化合物半導体からなるものを用いること
が好ましい。For the phosphorescent fluorescent agent, for example, SrAl 2 O 4 or ZnS: Cu is used. The wavelength of the excitation light is 200 to 450 nm. Therefore, in this case, it is preferable to use a light emitting diode chip made of, for example, a gallium nitride compound semiconductor having a peak wavelength of 430 nm.
【０００８】また、チップの近傍に設けられる透明部材
とは、チップを包み込んで密封するものや、チップから
離れてレンズとして作用するように設けられたものなど
を含む。透明部材の材料には、耐熱性や成形加工性など
を考慮して、従来の発光ダイオードチップの封止材とし
て一般に用いられるエポキシ系樹脂を使用することがで
きる。The transparent member provided in the vicinity of the chip includes a member that wraps and seals the chip and a member that is provided so as to separate from the chip and act as a lens. As a material of the transparent member, an epoxy resin generally used as a sealing material for a conventional light emitting diode chip can be used in consideration of heat resistance, moldability, and the like.
【０００９】透明部材中に分散して含まれる蓄光型蛍光
剤の粒子の粒径およびその含有量は、透明部材に対する
蓄光型蛍光剤の分散特性や蓄光（残光）特性から決定さ
れる。従って、透明部材がエポキシ系樹脂からなり、蓄
光型蛍光剤がＳｒＡｌ2Ｏ4やＺｎＳ：Ｃｕであるときに
は、蓄光型蛍光剤粒子の粒径は５〜３０μｍが好まし
く、蓄光型蛍光剤と樹脂との混合重量比は１：Ｋ（Ｋは
２〜５）が好ましい。The particle size and content of the phosphorescent phosphor particles dispersed and contained in the transparent member are determined from the dispersion characteristics and the luminous (afterglow) characteristics of the phosphorescent phosphor to the transparent member. Therefore, when the transparent member is made of an epoxy resin and the phosphorescent fluorescent agent is SrAl 2 O 4 or ZnS: Cu, the particle diameter of the phosphorescent fluorescent agent particles is preferably 5 to 30 μm. Is preferably 1: K (K is 2 to 5).
【００１０】なお、樹脂に対する蓄光型蛍光剤の含有率
については、それが大きいほど、蓄光特性は向上する
が、発光ダイオードチップの樹脂に対する透光特性が低
下する点を配慮すべきである。この特性を利用して、発
光ダイオードチップの透光輝度と蓄光型蛍光剤の残光輝
度との比率を用途に応じて制御することができる。発光
ダイオードチップは透明部材中に一体的に設置されても
よい。With respect to the content of the phosphorescent-type fluorescent agent in the resin, as the content is higher, the phosphorescent property is improved, but it should be considered that the transmissive property of the light-emitting diode chip to the resin is reduced. By utilizing this characteristic, the ratio between the light transmission luminance of the light emitting diode chip and the afterglow luminance of the phosphorescent phosphor can be controlled according to the application. The light emitting diode chip may be integrally provided in the transparent member.
【００１１】また、この発明の発光ダイオードチップは
発光波長（発光色）の異なる複数の発光ダイオードチッ
プから構成されてもよい。例えば、発光ダイオードチッ
プが発光波長の異なる第１および第２発光ダイオードチ
ップからなり、第１発光ダイオードチップは蓄光型蛍光
剤を励起可能な波長を有し、第２発光ダイオードチップ
は蓄光蛍光材を励起せず蓄光蛍光材の蛍光よりも長い波
長を有するようにしてもよい。Further, the light emitting diode chip of the present invention may be composed of a plurality of light emitting diode chips having different emission wavelengths (emission colors). For example, the light emitting diode chip includes first and second light emitting diode chips having different emission wavelengths, the first light emitting diode chip has a wavelength capable of exciting the phosphorescent fluorescent agent, and the second light emitting diode chip includes a phosphorescent fluorescent material. It may have a wavelength longer than the fluorescence of the phosphorescent material without being excited.
【００１２】この場合、第１発光ダイオードチップを所
定時間点灯させた後、第２発光ダイオードチップを点灯
させれば、発光ダイオードは、最初、第１発光ダイオー
ドチップの発光色に蓄光型蛍光剤の発する蛍光が混合さ
れた色で発光し、次に、蛍光のみで発光し、次に蛍光に
第２発光ダイオードの発光色を混合した色で発光し、蛍
光輝度の時間的低下に伴って、その混合色が徐々に変化
する。従って、発光色の異なる２つの発光ダイオードチ
ップを用いることにより、１つの色から他の色へ発光色
が徐々に変化する発光ダイオードを得ることができる。In this case, if the first light emitting diode chip is turned on for a predetermined time and then the second light emitting diode chip is turned on, the light emitting diode first emits the luminous color of the first light emitting diode chip with the phosphorescent phosphor. The emitted fluorescent light emits in a mixed color, and then emits only in the fluorescent light, and then emits in the mixed color of the fluorescent light and the emission color of the second light emitting diode. The mixed color changes gradually. Therefore, by using two light emitting diode chips having different emission colors, it is possible to obtain a light emitting diode in which the emission color gradually changes from one color to another.
【００１３】この場合、例えば、第１ダイオードチップ
には波長が４３０ｎｍの青色発光のＧａＮ系半導体を、
第２ダイオードチップには波長が６３０〜６６０ｎｍの
赤色発光のＧａＡｌＡｓ，ＧａＡｓＰ又はＡｌＧａＩｎ
Ｐなどの半導体を、蓄光蛍光材には波長が５２０ｎｍの
緑色の蛍光を発するＳｒＡｌ2Ｏ4を用いることができ
る。In this case, for example, a GaN-based semiconductor emitting blue light having a wavelength of 430 nm is used for the first diode chip.
The second diode chip has red emission GaAlAs, GaAsP or AlGaIn having a wavelength of 630 to 660 nm.
A semiconductor such as P can be used, and SrAl 2 O 4 that emits green fluorescence having a wavelength of 520 nm can be used as the phosphorescent phosphor.
【００１４】[0014]
【実施例】以下、図面に示す実施例を用いてこの発明を
説明する。 第１実施例 図１はこの発明の第１実施例を示す断面図である。この
発光ダイオード（以下、ＬＥＤという）は、ＬＥＤチッ
プ１１と、透明部材１３と、透明部材１３中に分散して
含まれる蓄光型蛍光剤粒子１４と、導電性のリードフレ
ーム１０ａ，１０ｂを備え、リードフレーム１０ａ，１
０ｂを、リードフレーム１０ａの先端にマウントされた
ＬＥＤチップ１１の上部電極とリードフレーム１０ｂと
をＡｕワイヤー１２にて電気的接続をとった状態で、図
示しないモールドケース内に吊り下げ、予め熱硬化性透
明樹脂に粒子状の蓄光型蛍光剤を適量混ぜておいたもの
を、モールドケースに注入し、熱硬化させて樹脂モール
ドすることにより形成される。この時、樹脂と蓄光型蛍
光剤との配合比をかえることで、蓄光型蛍光剤の発光輝
度と残光輝度を変化させることができ、それらは蓄光型
蛍光剤が多い程高輝度となる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the embodiments shown in the drawings. First Embodiment FIG. 1 is a sectional view showing a first embodiment of the present invention. The light emitting diode (hereinafter, referred to as LED) includes an LED chip 11, a transparent member 13, phosphorescent particles 14 dispersed and contained in the transparent member 13, and conductive lead frames 10a and 10b. Lead frame 10a, 1
0b is suspended in a mold case (not shown) in a state where the upper electrode of the LED chip 11 mounted on the tip of the lead frame 10a and the lead frame 10b are electrically connected by the Au wire 12, and is thermoset in advance. It is formed by injecting an appropriate amount of a particulate phosphorescent fluorescent agent into a transparent resin, injecting it into a mold case, thermally curing the resin, and resin molding. At this time, by changing the mixing ratio of the resin and the phosphorescent phosphor, the emission luminance and the afterglow luminance of the phosphorescent phosphor can be changed, and the higher the phosphorescent phosphor, the higher the luminance.
【００１５】次に、この実施例の変形例としてＳＭＤタ
イプの場合を図２に示す。このＬＥＤは、ＬＥＤチップ
１７と、透明部材１９と、透明部材１９中に分散して含
まれる蓄光型蛍光剤粒子２０と、基板１５と、電極１６
ａ，１６ｂとを備え、基板１５上の一方の電極１６ａ上
にマウントされたＬＥＤチップ１７の上部電極と、他方
の電極１６ｂとをＡｕワイヤー１８にて電気的接続をと
った状態で、あらかじめ透明樹脂に蓄光型蛍光剤を適量
まぜておいたものを用い、トランスファー成型により形
成される。上記と同様に配合比により、蓄光型蛍光剤の
発光輝度と残光輝度を変化させることが可能である。FIG. 2 shows an SMD type as a modification of this embodiment. The LED includes an LED chip 17, a transparent member 19, phosphorescent phosphor particles 20 dispersed and contained in the transparent member 19, a substrate 15, and an electrode 16.
a and 16b, and the upper electrode of the LED chip 17 mounted on one electrode 16a on the substrate 15 and the other electrode 16b are electrically connected with the Au wire 18 in advance, and are transparent in advance. It is formed by transfer molding using a resin in which an appropriate amount of a phosphorescent fluorescent agent is mixed. Similarly to the above, it is possible to change the light emission luminance and the afterglow luminance of the phosphorescent fluorescent agent by the compounding ratio.
【００１６】ＳＭＤタイプの他の変形例として、この発
明を側面発光型ＬＥＤに用いた場合を図３に示す。この
ＬＥＤは、ＬＥＤチップ２３と、透明部材２５と、透明
部材２５中に分散して含まれる蓄光型蛍光剤粒子２６
と、基板２１と、電極２２ａ，２２ｂと、遮光部材２７
とを備え、基板２１上の一方の電極２２ａ上にマウント
されたＬＥＤチップ２３の上部電極と、他方の電極２２
ｂとをＡｕワイヤー２４にて電気的接続をとった状態
で、予め熱硬化性透明樹脂に蓄光型蛍光剤を適量まぜて
おいたものでドーム型に覆い、その上面を遮光性を有す
る白色樹脂にてトランスファー成型し、その後ダイシン
グすることにより形成され、側面から発光するような構
造を有している。FIG. 3 shows another modified example of the SMD type in which the present invention is applied to a side emission type LED. The LED includes an LED chip 23, a transparent member 25, and phosphorescent phosphor particles 26 dispersedly contained in the transparent member 25.
, The substrate 21, the electrodes 22a and 22b, and the light shielding member 27.
And an upper electrode of the LED chip 23 mounted on one electrode 22a on the substrate 21 and another electrode 22
b is electrically connected by an Au wire 24 and covered in a dome shape with a thermosetting transparent resin mixed in advance with an appropriate amount of a phosphorescent fluorescent agent, and the upper surface thereof is a white resin having a light-shielding property. Is formed by transfer molding and then dicing, and has a structure that emits light from the side.
【００１７】第２実施例 この発明の第２実施例として、２色タイプの場合、３色
タイプの場合も考えられる。図４は第２実施例のＬＥＤ
を示す断面図である。構造としては、図１〜図３のもの
と同様で、透明樹脂内にあるＬＥＤチップの数が変わる
だけである。Second Embodiment As a second embodiment of the present invention, a two-color type and a three-color type can be considered. FIG. 4 shows an LED according to the second embodiment.
FIG. The structure is the same as that of FIGS. 1 to 3 except that the number of LED chips in the transparent resin is changed.
【００１８】つまり、このＬＥＤは、青色ＬＥＤチップ
１１ａと、赤色ＬＥＤチップ１１ｂと、透明部材１３ａ
と、透明部材１３ａ中に分散して含まれる蓄光型蛍光剤
粒子１４ａと、導電性のリードフレーム１０ｃ，１０
ｄ，１０ｅを備え、リードフレーム１０ｅ上にマウント
された青色ＬＥＤチップ１１ａと赤色ＬＥＤチップ１１
ｂの各上部電極とリードフレーム１０ｃ，１０ｄとをそ
れぞれＡｕワイヤー１２ａ，１２ｂにて電気的に接続を
とった状態で、図示しないモールドケース内に吊り下
げ、予め熱硬化性透明樹脂に粒子状の蓄光型蛍光剤を適
量混ぜておいたものを、モールドケースに注入し、熱硬
化させて樹脂モールドすることにより形成される。この
場合、蓄光型蛍光剤には青色ＬＥＤチップ１１ａの光に
励起されて緑色の光を発光するものを用いている。That is, this LED comprises a blue LED chip 11a, a red LED chip 11b, and a transparent member 13a.
And phosphorescent phosphor particles 14a dispersedly contained in the transparent member 13a, and conductive lead frames 10c and 10c.
d and 10e, and mounted on the lead frame 10e, the blue LED chip 11a and the red LED chip 11
The upper electrodes b and the lead frames 10c and 10d are suspended in a mold case (not shown) in a state where they are electrically connected by the Au wires 12a and 12b, respectively. It is formed by injecting an appropriate amount of a phosphorescent fluorescent agent into a mold case, thermally curing the resin, and molding the resin. In this case, a phosphorescent phosphor that emits green light when excited by light from the blue LED chip 11a is used.
【００１９】第２実施例のＬＥＤは、青色ＬＥＤチップ
１１ａを点灯すると、青と緑の混合色を発光し、次に青
色ＬＥＤチップ１１ａを消灯して赤色ＬＥＤチップ１１
ｂを点灯することにより橙色を発光し、その後蓄光型蛍
光剤の発光強度の低下に伴い発光色を徐々に変色させな
がら最後に赤色になる。The LED of the second embodiment emits a mixed color of blue and green when the blue LED chip 11a is turned on, then turns off the blue LED chip 11a and turns off the red LED chip 11a.
When b is turned on, orange light is emitted, and then the color becomes red while gradually changing the emission color with the decrease in the emission intensity of the phosphorescent fluorescent agent.
【００２０】なお、第１実施例におけるＬＥＤチップ１
１，１７，２３および第２実施例におけるＬＥＤチップ
１１ａには、ピーク波長が４３０ｎｍの青色を発光する
窒化ガリウム（ＧａＮ）系化合物半導体からなるＬＥＤ
チップを使用し、第２実施例におけるＬＥＤチップ１１
ｂには、ピーク波長が６６０ｎｍの赤色を発光するＧａ
ＡｌＡｓ系化合物半導体からなるＬＥＤチップを使用し
ている。The LED chip 1 in the first embodiment
The LED chips 11a in the embodiments 1, 17, 23 and the second embodiment are made of gallium nitride (GaN) based compound semiconductors emitting blue light with a peak wavelength of 430 nm.
LED chip 11 in the second embodiment using a chip
b is Ga that emits red light having a peak wavelength of 660 nm.
An LED chip made of an AlAs-based compound semiconductor is used.
【００２１】また、第１および第２実施例における粒子
状の蓄光型蛍光剤には５２０ｎｍの発光波長（緑色）を
有し平均粒子径が１２ミクロンのアルミン酸ストロンチ
ウム（ＳｒＡｌ2Ｏ4）を使用し、第１および第２実施例
における透明樹脂には、蓄光型蛍光剤との混練性や耐熱
性を考慮してエポキシ系樹脂を使用している。In the first and second embodiments, strontium aluminate (SrAl 2 O 4 ) having an emission wavelength of 520 nm (green) and having an average particle diameter of 12 μm is used as the particulate phosphorescent fluorescent agent in the first and second embodiments. An epoxy resin is used as the transparent resin in the first and second embodiments in consideration of the kneadability with the phosphorescent phosphor and the heat resistance.
【００２２】第１および第２実施例において、予め透明
樹脂に粒子状の蓄光型蛍光剤を適量混ぜておいたものを
用いるが、これは、真空状態で撹拌可能な容器に、蓄光
型蛍光剤（ＳｒＡｌ2Ｏ4）と透明樹脂（エポキシ系樹
脂）とを１：Ｋ（Ｋ＝２〜５）の重量比で投入し、樹脂
が流動性を失わない温度（ゲル化温度以下）で撹拌し、
真空脱泡したものである。In the first and second embodiments, a material in which a suitable amount of a particulate phosphorescent fluorescent agent is mixed in advance with a transparent resin is used. (SrAl 2 O 4 ) and a transparent resin (epoxy resin) are added at a weight ratio of 1: K (K = 2 to 5), and the mixture is stirred at a temperature at which the resin does not lose fluidity (below the gelling temperature). ,
Vacuum defoamed.
【００２３】図５と図６は、第１および第２実施例に用
いた蓄光型蛍光剤（ＳｒＡｌ2Ｏ4）の飽和輝度特性と残
光時間特性とをそれぞれ示すグラフである。図５と図６
から、励起時間２０分で飽和輝度の９０％以上の輝度が
得られ、その残光輝度は、励起停止後徐々に低下し、１
分後を１００％とすると、２分後に２分の１に、１０分
後に１０分の１に、１時間後に１００分の１になること
が分かる。FIGS. 5 and 6 are graphs showing the saturation luminance characteristics and the afterglow time characteristics of the phosphorescent phosphor (SrAl 2 O 4 ) used in the first and second embodiments, respectively. 5 and 6
From the results, a luminance of 90% or more of the saturation luminance was obtained in 20 minutes of the excitation time, and the afterglow luminance gradually decreased after the excitation was stopped, and
Assuming that the time after the minute is 100%, it can be seen that the value becomes 1/2 after 2 minutes, 1/10 after 10 minutes, and 1/100 after 1 hour.
【００２４】従って、第１実施例のＬＥＤを用いてＬＥ
Ｄチップの非通電時間における蓄光型蛍光剤の残光を適
当に利用すれば、省電力化された表示装置や照明装置を
得ることができる。また、第２実施例のＬＥＤを用いれ
ば、１つの色から他の色へ無段階に発光色が経時変化す
る斬新な表示装置を得ることができる。Therefore, LE using the LED of the first embodiment is
By appropriately using the afterglow of the phosphorescent phosphor during the non-energization time of the D chip, a power-saving display device or lighting device can be obtained. Further, by using the LED of the second embodiment, it is possible to obtain a novel display device in which the emission color changes steplessly from one color to another color over time.
【００２５】[0025]
【発明の効果】この発明によれば、蓄光発光を利用する
ことにより発光時間に対する消費電流を少なくすること
ができるので、省電力型の発光ダイオードを実現でき
る。また、複雑な回路を用いなくても、残光時間や蓄光
輝度などを調整することにより、容易に発光色の変化が
行えるので、発光ダイオードの多様化が可能となる。According to the present invention, the current consumption with respect to the light emission time can be reduced by utilizing the phosphorescent light emission, so that a power-saving light emitting diode can be realized. Further, even if a complicated circuit is not used, the emission color can be easily changed by adjusting the afterglow time, the light storage luminance, and the like, so that the light emitting diodes can be diversified.
【図１】この発明の第１実施例を示す断面図である。FIG. 1 is a sectional view showing a first embodiment of the present invention.
【図２】この発明の第１実施例の変形例を示す断面図で
ある。FIG. 2 is a sectional view showing a modification of the first embodiment of the present invention.
【図３】この発明の第１実施例の他の変形例を示す断面
図である。FIG. 3 is a sectional view showing another modification of the first embodiment of the present invention.
【図４】この発明の第２実施例を示す断面図である。FIG. 4 is a sectional view showing a second embodiment of the present invention.
【図５】この発明の蓄光型蛍光剤の飽和輝度特性を示す
グラフである。FIG. 5 is a graph showing a saturation luminance characteristic of the phosphorescent phosphor of the present invention.
【図６】この発明の蓄光型蛍光剤の残光時間特性を示す
グラフである。FIG. 6 is a graph showing the afterglow time characteristic of the phosphorescent phosphor of the present invention.
１０ａ リードフレーム １０ｂ リードフレーム １１ 発光ダイオードチップ １２ Ａｕワイヤー １３ 透明部材 １４ 蓄光型蛍光剤粒子 10a lead frame 10b lead frame 11 light emitting diode chip 12 Au wire 13 transparent member 14 phosphorescent phosphor particles
Claims (7)
近傍に設けられ前記チップの発する光を透過させる透明
部材と、前記透明部材中に分散して含まれる蓄光型蛍光
剤粒子からなる発光ダイオード。1. A light emitting diode comprising a light emitting diode chip, a transparent member provided in the vicinity of the chip and transmitting light emitted from the chip, and phosphorescent phosphor particles dispersed and contained in the transparent member.
光型蛍光剤を励起する波長範囲にある請求項１記載の発
光ダイオード。2. The light-emitting diode according to claim 1, wherein the light-emitting diode chip has an emission wavelength in a wavelength range that excites the phosphorescent fluorescent agent.
粒子と樹脂との混合重量比が１：２乃至１：５の範囲に
ある請求項１記載の発光ダイオード。3. The light emitting diode according to claim 1, wherein the transparent member is made of a resin, and a mixture weight ratio of the phosphorescent particles and the resin is in a range of 1: 2 to 1: 5.
光型蛍光剤がＳｒＡｌ2Ｏ4からなる請求項１記載の発光
ダイオード。 4. The light emitting diode according to claim 1, wherein the transparent member is made of an epoxy resin, and the phosphorescent phosphor is made of SrAl 2 O 4 .
覆われてなる請求項１記載の発光ダイオード。5. The light emitting diode according to claim 1, wherein the light emitting diode chip is covered with a transparent member.
複数の発光ダイオードチップからなる請求項１記載の発
光ダイオード。6. The light emitting diode according to claim 1, wherein the light emitting diode chip comprises a plurality of light emitting diode chips having different emission colors.
発光ダイオードチップからなり、第１発光ダイオードチ
ップは蓄光型蛍光剤を励起する発光波長を有し、第２発
光ダイオードチップは蓄光型蛍光剤の発光波長よりも長
い発光波長を有する請求項１記載の発光ダイオード。7. A light-emitting diode chip comprising first and second light-emitting diode chips.
2. The light-emitting diode chip according to claim 1, wherein the first light-emitting diode chip has an emission wavelength that excites the phosphorescent phosphor, and the second light-emitting diode chip has an emission wavelength longer than the emission wavelength of the phosphorescent phosphor. Light emitting diode.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33566598A JP3474118B2 (en) | 1998-11-26 | 1998-11-26 | Light emitting diode and its lighting method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33566598A JP3474118B2 (en) | 1998-11-26 | 1998-11-26 | Light emitting diode and its lighting method |
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|---|---|
| JP2000164935A true JP2000164935A (en) | 2000-06-16 |
| JP3474118B2 JP3474118B2 (en) | 2003-12-08 |
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ID=18291151
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|---|---|---|---|
| JP33566598A Expired - Lifetime JP3474118B2 (en) | 1998-11-26 | 1998-11-26 | Light emitting diode and its lighting method |
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| JP (1) | JP3474118B2 (en) |
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|---|---|---|---|---|
| JP2000275636A (en) * | 1999-03-25 | 2000-10-06 | Seiko Epson Corp | Light source and illumination device as well as liquid crystal device using the illumination device |
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| JP2003069084A (en) * | 2001-08-27 | 2003-03-07 | Toshiba Electronic Engineering Corp | Light emitting device |
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| JP3020514U (en) | 1995-07-14 | 1996-02-02 | 義一郎 佐藤 | Indoor foot lighting system |
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| JP2000275636A (en) * | 1999-03-25 | 2000-10-06 | Seiko Epson Corp | Light source and illumination device as well as liquid crystal device using the illumination device |
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| JP2004080046A (en) * | 2000-05-31 | 2004-03-11 | Matsushita Electric Ind Co Ltd | Led lamp and lamp unit |
| JP2003069084A (en) * | 2001-08-27 | 2003-03-07 | Toshiba Electronic Engineering Corp | Light emitting device |
| KR100567547B1 (en) * | 2002-06-24 | 2006-04-05 | 서울반도체 주식회사 | Pink Light-emitting diode and Method of Manufacturing the same |
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