JP2000150691A - Package for housing optical semiconductor device - Google Patents

Package for housing optical semiconductor device

Info

Publication number
JP2000150691A
JP2000150691A JP10327219A JP32721998A JP2000150691A JP 2000150691 A JP2000150691 A JP 2000150691A JP 10327219 A JP10327219 A JP 10327219A JP 32721998 A JP32721998 A JP 32721998A JP 2000150691 A JP2000150691 A JP 2000150691A
Authority
JP
Japan
Prior art keywords
optical semiconductor
semiconductor element
semiconductor device
frame
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10327219A
Other languages
Japanese (ja)
Inventor
Mitsuo Yanagisawa
美津夫 柳沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP10327219A priority Critical patent/JP2000150691A/en
Publication of JP2000150691A publication Critical patent/JP2000150691A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PROBLEM TO BE SOLVED: To enable to keep an optical semiconductor device at an appropriate temperature even by a low-power electronic cooling device by effectively preventing the heat of the electronic cooling device from acting on the optical semiconductor device, and to operate the optical semiconductor device normally and in a stable condition over the long term. SOLUTION: A package for housing an optical semiconductor device comprises a substrate 1 having a placing part 1a on the top of which the optical semiconductor device 4 is placed through an electronic cooling device 5, a frame 2 having a through hole 2a and a notch 2b on its sides which is mounted on the substrate 1 in such a way that it surrounds the optical semiconductor device placing part 1a, a cylindrical fixing element 9 which is mounted in the through hole 2a or on the frame around the through hole 2a and to which an optical fiber element 11 is joined, a ceramic terminal 6 which is mounted on the notch 2b and on which a metallized wiring layer 8 is formed for electrically connecting electrodes of the optical semiconductor device 4 to an insulator 7, and a lid 3 which is mounted on the top of the frame 2 for hermetically sealing the optical semiconductor device 4. In this case, the insulator 7 of the ceramic terminal 6 is made of mullite sintered compact.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は光半導体素子を収容
するための光半導体素子収納用パッケージに関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor element housing package for housing an optical semiconductor element.

【0002】[0002]

【従来の技術】従来、光半導体素子を収容するための光
半導体素子収納用パッケージは、一般に鉄ーニッケルー
コバルト合金や銅ータングステン合金等の金属材料から
成り、上面中央部に光半導体素子が電子冷却素子を間に
挟んで載置される載置部を有する基体と、前記光半導体
素子載置部を囲繞するようにして基体上に銀ロウ等のロ
ウ材を介して接合され、側部に貫通孔及び切欠部を有す
る鉄ーニッケルーコバルト合金等の金属材料から成る枠
体と、前記枠体の貫通孔もしくは貫通孔周辺の枠体に取
着され、内部に光信号が伝達される空間を有する鉄ーニ
ッケルーコバルト合金等の金属材料から成る筒状の固定
部材と、前記筒状の固定部材に融点が300〜400℃
の金ー錫合金等の低融点ロウ材を介して取着された固定
部材の内部を塞ぐ非晶質ガラス等から成る透光性部材
と、前記枠体の切欠部に挿着され、酸化アルミニウム質
焼結体から成る絶縁体に光半導体素子の各電極がボンデ
ィングワイヤを介して電気的に接続されるメタライズ配
線層が形成されているセラミック端子体と、前記枠体の
上面に取着され、光半導体素子を気密に封止する蓋部材
とから構成されており、前記基体の光半導体素子載置部
に光半導体素子を間にペルチェ素子等の電子冷却素子を
挟んで載置固定させるとともに該光半導体素子の各電極
をボンディングワイヤを介してセラミック端子体のメタ
ライズ配線層に電気的に接続し、しかる後、前記枠体の
上面に蓋部材を接合させ、基体と枠体と蓋部材とから成
る容器内部に光半導体素子を気密に収容するとともに筒
状固定部材に光ファイバー部材を、例えば、YAG溶接
等により取着することによって製品としての光半導体装
置となる。
2. Description of the Related Art Conventionally, an optical semiconductor device housing package for housing an optical semiconductor device is generally made of a metal material such as an iron-nickel-cobalt alloy or a copper-tungsten alloy. A base having a mounting portion to be mounted with the electronic cooling element interposed therebetween, and a base material joined to the optical semiconductor device mounting portion via a brazing material such as silver brazing so as to surround the mounting portion; A frame made of a metal material such as an iron-nickel-cobalt alloy having a through-hole and a notch, and a frame around the through-hole or the through-hole of the frame, and an optical signal is transmitted inside. A cylindrical fixing member made of a metal material such as an iron-nickel-cobalt alloy having a space, and a melting point of the cylindrical fixing member of 300 to 400 ° C.
A translucent member made of amorphous glass or the like that closes the inside of the fixing member attached via a low melting point brazing material such as a gold-tin alloy, and an aluminum oxide that is inserted into the cutout of the frame and is inserted. A ceramic terminal body in which a metallized wiring layer in which each electrode of the optical semiconductor element is electrically connected to an insulator made of a porous sintered body through a bonding wire is attached to an upper surface of the frame, A lid member for hermetically sealing the optical semiconductor element, and mounting and fixing the optical semiconductor element on the optical semiconductor element mounting portion of the base with an electronic cooling element such as a Peltier element interposed therebetween. Each electrode of the optical semiconductor element is electrically connected to the metallized wiring layer of the ceramic terminal body via a bonding wire, and thereafter, a lid member is joined to the upper surface of the frame, and the base, the frame, and the lid are separated from each other. Light guide inside the container An optical fiber member into the cylindrical fixing member accommodates the device in an airtight, for example, the optical semiconductor device as a product by attaching the YAG welding or the like.

【0003】かかる光半導体装置は電子冷却素子により
光半導体素子を冷却しつつ光半導体素子に外部電気回路
から供給される駆動信号によって光励起を起こさせ、該
励起した光を透光性部材を介し光ファイバー部材に授受
させるとともに該光ファイバー部材の光ファイバー内を
伝達させることによって高速通信等に使用される。
In such an optical semiconductor device, while the optical semiconductor element is cooled by an electronic cooling element, optical excitation is caused to the optical semiconductor element by a drive signal supplied from an external electric circuit, and the excited light is transmitted through an optical fiber through a light transmitting member. It is used for high-speed communication and the like by transmitting and receiving the member and transmitting the inside of the optical fiber of the optical fiber member.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、この従
来の光半導体素子収納用パッケージにおいては、基体及
び枠体を形成している鉄ーニッケルーコバルト合金や銅
ータングステン合金等の金属材料やセラミック端子体の
絶縁体を形成している酸化アルミニウム質焼結体の熱伝
導率が15W/m・k以上であることから、光半導体素
子をペルチェ素子等の電子冷却素子で冷却しつつ外部電
気回路から供給される駆動信号によって光励起させた場
合、ペルチエ素子等の電子冷却素子は光半導体素子が載
置される上面側は低温となっているものの基体と接する
下面側は高温(約100℃)となっているため電子冷却
素子の発する熱が基体、枠体、セラミック端子体及びボ
ンディングワイヤを介して光半導体素子に大きく作用
し、この電子冷却素子の熱によって光半導体素子の電子
冷却素子による冷却効率が大きく低下してしまうという
欠点を有していた。そのため従来は光半導体素子が作動
時に発する熱と、基体、枠体等を介して光半導体素子に
伝達される電子冷却素子の熱の両方を吸収するために電
子冷却素子の出力を高いものとする必要があった。
However, in this conventional package for housing an optical semiconductor element, a metal material such as an iron-nickel-cobalt alloy or a copper-tungsten alloy or a ceramic terminal forming a base and a frame is used. Since the thermal conductivity of the aluminum oxide sintered body forming the insulator of the body is 15 W / m · k or more, the optical semiconductor element is cooled by an electronic cooling element such as a Peltier element or the like from an external electric circuit. When photo-excitation is performed by a supplied drive signal, the temperature of the upper surface of the electronic cooling element such as a Peltier element on which the optical semiconductor element is mounted is low, but the temperature of the lower surface in contact with the base is high (about 100 ° C.). Therefore, the heat generated by the electronic cooling element greatly affects the optical semiconductor element via the base, the frame, the ceramic terminal body, and the bonding wire, and this electronic cooling element It had a drawback that the cooling efficiency by the electronic cooling element of the optical semiconductor element is reduced greatly by heat. Therefore, conventionally, the output of the electronic cooling element is increased to absorb both the heat generated by the optical semiconductor element during operation and the heat of the electronic cooling element transmitted to the optical semiconductor element via the base, the frame, and the like. Needed.

【0005】本発明は上記欠点に鑑み案出されたもの
で、その目的は電子冷却素子の熱が光半導体素子に作用
するのを有効に防止し、低出力の電子冷却素子によって
も光半導体素子を常に適温として光半導体素子を長期間
にわたり正常に、かつ安定に作動させることができる光
半導体素子収納用パッケージを提供することにある。
The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to effectively prevent the heat of the electronic cooling element from acting on the optical semiconductor element, and to provide the optical semiconductor element with a low-output electronic cooling element. It is an object of the present invention to provide an optical semiconductor element housing package that can always operate the optical semiconductor element normally and stably for a long time by setting the temperature of the optical semiconductor element to an appropriate temperature.

【0006】[0006]

【課題を解決するための手段】本発明は、上面に光半導
体素子が電子冷却素子を介して載置される載置部を有す
る基体と、前記基体上に光半導体素子載置部を囲繞する
ようにして取着され、側部に貫通孔及び切欠部を有する
枠体と、前記貫通孔もしくは貫通孔周辺の枠体に取着さ
れ、光ファイバー部材が接合される筒状の固定部材と、
前記切欠部に挿着され、絶縁体に光半導体素子の各電極
が電気的に接続されるメタライズ配線層が形成されてい
るセラミック端子体と、前記枠体の上面に取着され、光
半導体素子を気密に封止する蓋部材とからなる光半導体
素子収納用パッケージであって、前記セラミック端子体
の絶縁体がムライト質焼結体から成ることを特徴とする
ものである。
According to the present invention, there is provided a base having a mounting portion on which an optical semiconductor device is mounted via an electronic cooling element on an upper surface, and surrounding the optical semiconductor device mounting portion on the base. Attached to the frame body having a through-hole and a cutout on the side, and a tubular fixing member attached to the through-hole or the frame around the through-hole and joined to the optical fiber member,
A ceramic terminal body having a metallized wiring layer formed in the notch and having an insulator electrically connected to each electrode of the optical semiconductor element, and an optical semiconductor element attached to an upper surface of the frame body; And a lid member for hermetically sealing the ceramic terminal body, wherein the insulator of the ceramic terminal body is made of a mullite sintered body.

【0007】本発明の光半導体素子収納用パッケージに
よればセラミック端子体の絶縁体を、熱伝導率が約5W
/m・kと低くく熱を伝え難いムライト質焼結体で形成
したことから光半導体素子をペルチェ素子等の電子冷却
素子で冷却しつつ外部電気回路から供給される駆動信号
によって光励起させた場合、電子冷却素子の発した熱が
基体、枠体、セラミック端子体及びボンディングワイヤ
を介して光半導体素子に作用しようとしてもその熱の伝
達はセラミック端子体で遮断されて光半導体素子に作用
することはなく、その結果、光半導体素子の電子冷却素
子による冷却効率が高いものとなり、低出力の電子冷却
素子でも光半導体素子を常に適温として光半導体素子を
長期間にわたり正常、かつ安定に作動させることが可能
となる。
According to the package for housing an optical semiconductor element of the present invention, the insulator of the ceramic terminal body is made to have a thermal conductivity of about 5 W.
When the optical semiconductor device is cooled by an electronic cooling device such as a Peltier device and is optically excited by a drive signal supplied from an external electric circuit because the optical semiconductor device is formed of a mullite sintered body that is low and does not easily conduct heat. Even if the heat generated by the electronic cooling element tries to act on the optical semiconductor element via the base, the frame, the ceramic terminal and the bonding wire, the transfer of the heat is cut off by the ceramic terminal and acts on the optical semiconductor element. However, as a result, the cooling efficiency of the optical semiconductor element by the electronic cooling element becomes high, and the optical semiconductor element is always kept at an appropriate temperature and the optical semiconductor element operates normally and stably for a long period of time even with a low-output electronic cooling element. Becomes possible.

【0008】[0008]

【発明の実施の形態】次に、本発明を添付図面に基づき
説明に説明する。図1乃至図3は本発明の光半導体素子
収納用パッケージの一実施例を示し、1は基体、2は枠
体、3は蓋部材である。この基体1と枠体2と蓋部材3
とで内部に光半導体素子4を収容するための容器が構成
される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the accompanying drawings. 1 to 3 show an embodiment of the package for housing an optical semiconductor element according to the present invention, wherein 1 is a base, 2 is a frame, and 3 is a lid member. The base 1, the frame 2, and the cover 3
A container for accommodating the optical semiconductor element 4 is formed therein.

【0009】前記基体1は光半導体素子4を支持するた
めの支持部材として作用し、その上面の略中央部に光半
導体素子4を載置するための載置部1aを有し、該載置
部1aには光半導体素子4が間にペルチェ素子等の電子
冷却素子5を挟んで金−シリコンロウ材等の接着剤によ
り接着固定される。
The base 1 functions as a support member for supporting the optical semiconductor element 4, and has a mounting section 1a for mounting the optical semiconductor element 4 at a substantially central portion of the upper surface thereof. The optical semiconductor element 4 is bonded and fixed to the portion 1a with an adhesive such as a gold-silicon brazing material with an electronic cooling element 5 such as a Peltier element interposed therebetween.

【0010】前記基体1は鉄ーニッケルーコバルト合金
や銅ータングステン合金等の金属材料から成り、例え
ば、鉄ーニッケルーコバルト合金から成る場合、鉄ーニ
ッケルーコバルト合金のインゴット(塊)に圧延加工法
や打ち抜き加工法等、従来周知の金属加工法を施すこと
によって製作される。
The substrate 1 is made of a metal material such as an iron-nickel-cobalt alloy or a copper-tungsten alloy. It is manufactured by applying a conventionally known metal working method such as a working method or a punching working method.

【0011】なお、前記基体1はその外表面に耐蝕性に
優れ、かつロウ材に対して濡れ性が良い金属、具体的に
は厚さ2〜6μmのニッケル層と厚さ0.5〜5μmの
金層を順次、メッキ法により被着させておくと、基体1
が酸化腐蝕するのを有効に防止することができるととも
に基体1上面に光半導体素子4の下部に配されるペルチ
ェ素子等の電子冷却素子5を強固に接着固定させること
かできる。従って、前記基体1は酸化腐蝕を有効に防止
し、かつ上面に光半導体素子4の下部に配されるペルチ
ェ素子等の電子冷却素子5を強固に接着固定させる場合
にはその外表面に厚さ2〜6μmのニッケル層と厚さ
0.5〜5μmの金層を順次、メッキ法により被着させ
ておくことが好ましい。
The substrate 1 has a metal having excellent corrosion resistance on its outer surface and good wettability to a brazing material, specifically, a nickel layer having a thickness of 2 to 6 μm and a thickness of 0.5 to 5 μm. When the gold layers are sequentially applied by a plating method,
Can be effectively prevented from being oxidized and corroded, and an electronic cooling element 5 such as a Peltier element disposed below the optical semiconductor element 4 can be firmly adhered and fixed on the upper surface of the base 1. Therefore, the base 1 effectively prevents oxidative corrosion and has a thickness on its outer surface when an electronic cooling element 5 such as a Peltier element arranged on the upper surface below the optical semiconductor element 4 is firmly adhered and fixed. It is preferable that a nickel layer having a thickness of 2 to 6 μm and a gold layer having a thickness of 0.5 to 5 μm are sequentially applied by a plating method.

【0012】また前記基体1の上面には、光半導体素子
4が載置される載置部1aを囲繞するようにして枠体2
が接合されており、該枠体2の内側に光半導体素子4を
収容するための空所が形成されている。
A frame 2 is provided on the upper surface of the base 1 so as to surround the mounting portion 1a on which the optical semiconductor element 4 is mounted.
Are formed, and a space for accommodating the optical semiconductor element 4 is formed inside the frame 2.

【0013】前記枠体2は鉄ーニッケルーコバルト合金
や鉄ーニッケル合金等の金属材料から成り、例えば、鉄
ーニッケルーコバルト合金等のインゴット(塊)をプレ
ス加工により枠状とすることによって形成され、基体1
への取着は基体1上面と枠体2の下面とを銀ロウ材を介
しロウ付けすることによって行われている。
The frame 2 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. For example, the frame 2 is formed by pressing an ingot (lumps) of an iron-nickel-cobalt alloy or the like into a frame shape by pressing. And the substrate 1
Attachment is performed by brazing the upper surface of the base 1 and the lower surface of the frame 2 via a silver brazing material.

【0014】更に前記枠体2はその側部に貫通孔2aが
設けてあり、該貫通孔2aの内壁面には筒状の固定部材
9が取着され、更に筒状の固定部材9の内側の一端には
透光性部材10が取着されている。
Further, the frame 2 is provided with a through hole 2a on a side portion thereof, and a cylindrical fixing member 9 is attached to the inner wall surface of the through hole 2a. A light-transmissive member 10 is attached to one end.

【0015】前記枠体2の側部に形成されている貫通孔
2aは固定部材9を枠体2に取着するための取着孔とし
て作用し、枠体2の側部に従来周知のドリル孔あけ加工
を施すことによって所定形状に形成される。
A through hole 2a formed in the side of the frame 2 acts as a mounting hole for mounting the fixing member 9 to the frame 2, and a well-known drill is formed in the side of the frame 2. It is formed in a predetermined shape by performing drilling.

【0016】前記枠体2の貫通孔2aに取着されている
固定部材9は光ファイバー部材11を枠体2に固定する
際の下地固定部材として作用するとともに光半導体素子
4が励起した光を光ファイバー部材11に伝達させる作
用をなし、その内側の一端には、例えば、透光性部材1
0が取着され、また外側の一端には光ファイバー部材1
1が取着接続される。
A fixing member 9 attached to the through hole 2a of the frame 2 functions as a base fixing member for fixing the optical fiber member 11 to the frame 2, and also converts the light excited by the optical semiconductor element 4 into an optical fiber. A function of transmitting the light to the member 11 is provided.
0 is attached, and an optical fiber member 1
1 is attached and connected.

【0017】前記筒状の固定部材9は鉄ーニッケルーコ
バルト合金や鉄ーニッケル合金等の金属材料から成り、
例えば、鉄ーニッケル合金のインゴット(塊)をプレス
加工により筒状とすることによって形成される。
The cylindrical fixing member 9 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
For example, it is formed by pressing an iron-nickel alloy ingot into a tubular shape.

【0018】また前記固定部材9はその内側の一端に、
例えば、透光性部材10が取着されており、該透光性部
材10は固定部材9の内部空間を塞ぎ、基体1と枠体2
と蓋部材3とから成る容器の気密封止を保持させるとと
もに固定部材9の内部空間を伝達する光半導体素子4の
励起した光をそのまま固定部材9に取着接続される光フ
ァイバー部材11に伝達させる作用をなす。
The fixing member 9 has one end on its inner side.
For example, a translucent member 10 is attached, the translucent member 10 closes the internal space of the fixing member 9, and the base 1 and the frame 2
The light excited by the optical semiconductor element 4 that transmits the internal space of the fixing member 9 is transmitted to the optical fiber member 11 that is attached to and connected to the fixing member 9 as it is, while maintaining the hermetic sealing of the container including the lid member 3 and the container. Works.

【0019】前記透光性部材10は例えば、酸化珪素、
酸化鉛を主成分とした鉛系及びホウ酸、ケイ砂を主成分
としたホウケイ酸系の非晶質ガラスで形成されており、
該非晶質ガラスは結晶軸が存在しないことから光半導体
素子4の励起する光を透光性部材10を通過させて光フ
ァイバー部材11に授受させる場合、光半導体素子4の
励起した光は透光性部材10で複屈折を起こすことはな
くそのまま光ファイバー部材11に授受されることとな
り、その結果、光半導体素子4が励起した光の光ファイ
バー部材11への授受が高効率となって光信号の伝送効
率を高いものとなすことができる。
The light transmitting member 10 is made of, for example, silicon oxide,
It is made of lead-based and boric acid containing lead oxide as a main component, and borosilicate-based amorphous glass containing silica sand as a main component.
Since the amorphous glass has no crystal axis, the light excited by the optical semiconductor element 4 is transmitted and received by the optical fiber member 11 through the light-transmitting member 10. The birefringence does not occur in the member 10 and is transmitted and received to the optical fiber member 11 as it is. As a result, the transmission and reception of the light excited by the optical semiconductor element 4 to and from the optical fiber member 11 becomes highly efficient, and the transmission efficiency of the optical signal is increased. Can be made higher.

【0020】前記透光性部材10の固定部材9への取着
は例えば、図3に示すように、透光性部材10の外周部
に予めメタライズ層12を被着させておき、該メタライ
ズ層12と固定部材9とを金一錫合金等のロウ材を介し
ロウ付けすることによって行われる。この場合、透光性
部材10の固定部材9への取着が金一錫合金等によるロ
ウ付けにより行われることから取着の信頼性が高いもの
となり、これによって固定部材9と透光性部材10との
取着部における光半導体素子4を収容する容器の気密封
止が完全となり、容器内部に収容する光半導体素子4を
長期間にわたり正常、かつ安定に作動させることができ
る。
As shown in FIG. 3, for example, as shown in FIG. 3, a metallization layer 12 is previously applied to the outer periphery of the light-transmitting member 10 and the light-transmitting member 10 is attached to the fixing member 9. This is performed by brazing the fixing member 12 and the fixing member 9 via a brazing material such as a gold-tin alloy. In this case, since the attachment of the translucent member 10 to the fixing member 9 is performed by brazing with a gold-tin alloy or the like, the attachment is highly reliable. The hermetic sealing of the container housing the optical semiconductor element 4 at the portion where the optical semiconductor element 4 is attached to the container 10 is completed, and the optical semiconductor element 4 housed inside the container can be normally and stably operated for a long period of time.

【0021】なお、前記透光性部材10の外周部に予め
被着されているメタライズ層12は透光性部材10を構
成する非晶質ガラスの融点が約700℃と低く、従来周
知のMo−Mn法を採用することによって形成すること
かできないことから図3に示すように、非晶質ガラスに
対して活性があり、強固に接合するチタン、チタンータ
ングステン、窒化タンタルの少なくとも1種から成る第
1層12aと、この第1層12aが透光性部材10を固
定部材9にロウ付けする際の熱によって後述する第3層
12cに拡散し、メタライズ層12の透光性部材10に
対する接合強度が低下するのを有効に防止する白金、ニ
ッケル、ニッケルークロムの少なくとも1種から成る第
2層12bと、メタライズ層12に対するロウ材の濡れ
性を改善し、メタライズ層12にロウ材を強固に接合さ
せて透光性部材10を固定部材9に強固に取着させる
金、白金、銅の少なくとも1種から成る第3層12cと
を順次、積層させることによって形成されており、特に
チタンー白金ー金を順次積層させて形成したメタライズ
層12は透光性部材10との接合強度が強く、かつロウ
材との濡れ性が良好で透光性部材10を固定部材9にロ
ウ付けすることが可能なことからメタライズ層12とし
て極めて好適である。
The metallized layer 12 previously coated on the outer periphery of the light-transmitting member 10 has a low melting point of about 700 ° C. of the amorphous glass constituting the light-transmitting member 10. As shown in FIG. 3, since at least one of titanium, titanium-tungsten, and tantalum nitride which are active with respect to amorphous glass and can be bonded firmly cannot be formed by adopting the Mn method. The first layer 12a and the first layer 12a diffuse into a third layer 12c, which will be described later, due to heat generated when the translucent member 10 is brazed to the fixing member 9, and the metallized layer 12 is applied to the translucent member 10. A second layer (12b) made of at least one of platinum, nickel, and nickel-chromium, which effectively prevents a decrease in bonding strength; A third layer 12c made of at least one of gold, platinum, and copper, in which a brazing material is firmly bonded to the oil layer 12 and the translucent member 10 is firmly attached to the fixing member 9, is sequentially laminated. Particularly, the metallized layer 12 formed by sequentially laminating titanium-platinum-gold has a strong bonding strength with the light-transmitting member 10 and a good wettability with the brazing material, so that the light-transmitting member 10 is fixed. Since it can be brazed to the member 9, it is very suitable as the metallized layer 12.

【0022】更に前記チタン、チタンータングステン、
窒化タンタルの少なくとも1種から成る第1層12a
と、白金、ニッケル、ニッケルークロムの少なくとも1
種から成る第2層12bと、金、白金、銅の少なくとも
1種から成る第3層12cとの3層椿造を有するメタラ
イズ層12はその各々の金属材料、窒化物を透光性部材
10の外周部にスパッタリング法や蒸着法、イオンプレ
ーティング法、メッキ法等により順次、所定厚みに被着
させることによって形成される。
The above titanium, titanium-tungsten,
First layer 12a made of at least one kind of tantalum nitride
And at least one of platinum, nickel and nickel-chromium
The metallized layer 12 having a three-layer structure of a second layer 12b made of a seed and a third layer 12c made of at least one of gold, platinum and copper is made of a metal material and a nitride. Is formed by sequentially applying a predetermined thickness to the outer peripheral portion by a sputtering method, a vapor deposition method, an ion plating method, a plating method, or the like.

【0023】また更に前記メタライズ層12をチタン、
チタンータングステン、窒化タンタルの少なくとも1種
から成る第1層12aと、白金、ニッケル、ニッケルー
クロムの少なくとも1種から成る第2層12bと、金、
白金、銅の少なくとも1種から成る第3層12cとで形
成する場合、第1層12aの層厚は500オングストロ
ーム未満となるとメタライズ層12の透光性部材10に
対する接合強度が弱くなる傾向にあり、また2000オ
ングストロームを超えると透光性部材10に第1層12
aを被着させる際に第1層12a中に大きな応力が発生
内在し、該内在応力によって第1層12aが透光性部材
10より剥離し易くなる傾向にあることから第1層12
aの厚みは500オングストローム乃至2000オング
ストロームの範囲としておくことが好ましく、第2層1
2bの層厚は500オングストローム未満となると透光
性部材10を固定部材9にロウ付けする際の熱によって
第1層12aが第3層12cに拡散するのを有効に防止
することができず、メタライズ層12の透光性部材10
に対する接合強度が低下してしまう危険性があり、また
10000オングストロームを超えると第1層12a上
に第2層12bを被着させる際に第2層12b中に大き
な応力が発生内在し、該内在応力によって第2層12b
が第1層12aより剥離し易くなる傾向にあることから
第2層12bの厚みは500オングストローム乃至10
000オングストロームの範囲としておくことが好まし
く、第3層12cの層厚は0.5μm未満であるとメタ
ライズ層12に対するロウ材の濡れ性が大きく改善され
ず、透光性部材10を固定部材9に強固にロウ付け取着
するのが困難となる傾向にあり、また5μmを超えると
第2層12b上に第3層12cを被着させる際に第3層
12c中に大きな応力が発生内在し、該内在応力によっ
て第3層12cが第2層12bより剥離し易くなる傾向
にあることから第3層12cの厚みは0.5μm乃至5
μmの範囲としておくことが好ましい。
Further, the metallized layer 12 is made of titanium,
A first layer 12a made of at least one of titanium-tungsten and tantalum nitride; a second layer 12b made of at least one of platinum, nickel and nickel-chromium;
When the third layer 12c made of at least one of platinum and copper is used, if the thickness of the first layer 12a is less than 500 angstroms, the bonding strength of the metallized layer 12 to the translucent member 10 tends to be weak. When the thickness exceeds 2000 angstroms, the first layer 12
When the first layer 12a is applied, a large stress is generated in the first layer 12a and the first layer 12a tends to be easily separated from the light transmitting member 10 due to the intrinsic stress.
The thickness of a is preferably in the range of 500 Å to 2000 Å, and the second layer 1
If the thickness of the layer 2b is less than 500 angstroms, it is not possible to effectively prevent the first layer 12a from diffusing into the third layer 12c due to heat generated when the translucent member 10 is brazed to the fixing member 9, Transparent member 10 of metallized layer 12
When the thickness exceeds 10,000 Å, a large stress is generated in the second layer 12b when the second layer 12b is deposited on the first layer 12a. 2nd layer 12b by stress
Has a tendency to peel off more easily than the first layer 12a, so that the thickness of the second layer 12b is 500 Å to 10 Å.
When the thickness of the third layer 12c is less than 0.5 μm, the wettability of the brazing material with respect to the metallized layer 12 is not significantly improved, and the light transmitting member 10 is fixed to the fixing member 9. There is a tendency that it is difficult to firmly braze and attach. If it exceeds 5 μm, a large stress is generated in the third layer 12c when the third layer 12c is applied on the second layer 12b, Since the third layer 12c tends to be easily separated from the second layer 12b due to the intrinsic stress, the thickness of the third layer 12c is 0.5 μm to 5 μm.
It is preferable to keep the range of μm.

【0024】更に前記枠体2はその側部に切欠部2bが
形成されており、該切欠部2bにはセラミック端子体6
が挿着されている。
Further, the frame 2 has a notch 2b formed on the side thereof, and the notch 2b has a ceramic terminal 6
Is inserted.

【0025】前記セラミック端子体6は電気絶縁材料か
ら成る絶縁体7と複数個のメタライズ配線層8とから成
り、メタライズ配線層8を枠体2に対し電気的絶縁をも
って枠体2の内側から外側にかけて配設する作用をな
し、絶縁体7の側面に予めメタライズ金属層を被着させ
ておくとともに該メタライズ金属層を枠体2の切欠部2
a内壁面に銀ロウ等のロウ材を介し取着することによっ
て枠体2の切欠部2aに挿着される。
The ceramic terminal 6 comprises an insulator 7 made of an electrically insulating material and a plurality of metallized wiring layers 8. The metallized wiring layer 8 is electrically insulated from the frame 2 from the inside to the outside of the frame 2. The metallized metal layer is previously applied to the side surface of the insulator 7 and the metallized metal layer is attached to the cutout 2 of the frame 2.
By being attached to the inner wall surface through a brazing material such as silver brazing, it is inserted into the cutout 2a of the frame 2.

【0026】前記セラミック端子体6の絶縁体7はムラ
イト質焼結体から成り、該ムライト質焼結体の熱伝導率
は約5W/m・kと低くく熱を伝え難いことから光半導
体素子4をペルチェ素子等の電子冷却素子5で冷却しつ
つ外部電気回路から供給される駆動信号によって光励起
させた場合、電子冷却素子5の発した熱が基体1、枠体
2、セラミック端子体6及び後述するボンディングワイ
ヤ12を介して光半導体素子4に作用しようとしてもそ
の熱の伝達はセラミック端子体6で遮断されて光半導体
素子4に作用することはなく、その結果、光半導体素子
4の電子冷却素子5による冷却効率が高いものとなり、
低出力の電子冷却素子でも光半導体素子4を常に適温と
して光半導体素子4を長期間にわたり正常、かつ安定に
作動させることが可能となる。
The insulator 7 of the ceramic terminal body 6 is made of a mullite sintered body, and the thermal conductivity of the mullite sintered body is as low as about 5 W / m · k, and it is difficult to conduct heat. When the device 4 is optically excited by a drive signal supplied from an external electric circuit while being cooled by an electronic cooling device 5 such as a Peltier device, the heat generated by the electronic cooling device 5 causes the base 1, frame 2, ceramic terminal 6 and Even if an attempt is made to act on the optical semiconductor element 4 via a bonding wire 12 to be described later, the transfer of heat is cut off by the ceramic terminal body 6 and does not act on the optical semiconductor element 4. The cooling efficiency by the cooling element 5 becomes high,
Even with a low-power electronic cooling element, the optical semiconductor element 4 can be normally and stably operated for a long period of time by keeping the optical semiconductor element 4 at an appropriate temperature.

【0027】前記セラミック端子体6のムライト質焼結
体から成る絶縁体7は、例えば、酸化アルミニウム、酸
化珪素等の原料粉末に適当な有機バインダー、溶剤等を
添加混合して泥漿物を作るとともに、該泥漿物をドクタ
ーブレード法やカレンダーロール法を採用することによ
ってセラミックグリーンシート(セラミック生シート)
と成し、しかる後、前記セラミックグリーンシートに適
当な打ち抜き加工を施すとともにこれを複数枚積層し、
約1500℃の温度で焼成することによって製作され
る。
The insulator 7 made of a mullite sintered body of the ceramic terminal body 6 is formed by adding a suitable organic binder, a solvent and the like to a raw material powder such as aluminum oxide and silicon oxide to form a slurry. The green material (ceramic green sheet) is obtained by applying the doctor blade method or the calendar roll method to the slurry.
After that, a suitable punching process is performed on the ceramic green sheet and a plurality of the ceramic green sheets are laminated,
It is manufactured by firing at a temperature of about 1500 ° C.

【0028】また前記セラミック端子体6には枠体2の
内側から外側にかけて導出する複数個のメタライズ配線
層8が埋設されており、該メタライズ配線層8の枠体2
の内側に位置する領域には光半導体素子4の各電極がボ
ンディングワイヤ12を介して電気的に接続され、また
枠体2の外側に位置する領域には外部電気回路と接続さ
れる外部リード端子13が銀ロウ等のロウ材を介し取着
されている。
A plurality of metallized wiring layers 8 extending from the inside to the outside of the frame body 2 are embedded in the ceramic terminal body 6.
Each electrode of the optical semiconductor element 4 is electrically connected to a region located inside the frame 2 through a bonding wire 12, and an external lead terminal connected to an external electric circuit is located in a region located outside the frame 2. Reference numeral 13 is attached via a brazing material such as a silver brazing material.

【0029】前記メタライズ配線層8は半導体素子4の
各電極を外部電気回路に接続する際の導電路として作用
し、タングステン、モリブデン、マンガン等の高融点金
属粉末により形成されている。
The metallized wiring layer 8 functions as a conductive path for connecting each electrode of the semiconductor element 4 to an external electric circuit, and is formed of a high melting point metal powder such as tungsten, molybdenum, manganese or the like.

【0030】前記メタライズ配線層8はタングステン、
モリブデン、マンガン等の高融点金属粉末に適当な有機
バインダー、溶剤等を添加混合して得た金属ペーストを
絶縁体7となるセラミックグリーンシートに予め従来周
知のスクリーン印刷法により所定パターンに印刷塗布し
ておくことによって絶縁体7に形成される。
The metallized wiring layer 8 is made of tungsten,
A metal paste obtained by adding a suitable organic binder, a solvent, and the like to a high melting point metal powder such as molybdenum, manganese, or the like is applied to a ceramic green sheet serving as an insulator 7 in a predetermined pattern by a screen printing method. This is formed on the insulator 7.

【0031】なお、前記メタライズ配線層8はその露出
する表面にニッケル、金等の耐蝕性に優れ、かつロウ材
との濡れ性に優れる金属を1μm〜20μmの厚みにメ
ッキ法により被着させておくと、メタライズ配線層8の
酸化腐蝕を有効に防止することができるとともにメタラ
イズ配線層8への外部リード端子13のロウ付けを強固
となすことができる。従って、前記メタライズ配線層8
は、その露出する表面にニッケル、金等の耐蝕性に優
れ、かつロウ材との濡れ性に優れる金属を1μm〜20
μmの厚みに被着させておくことが好ましい。
The metallized wiring layer 8 is formed by coating a metal having excellent corrosion resistance such as nickel and gold and having excellent wettability with a brazing material to a thickness of 1 μm to 20 μm on an exposed surface by plating. By doing so, the oxidation corrosion of the metallized wiring layer 8 can be effectively prevented, and the brazing of the external lead terminals 13 to the metallized wiring layer 8 can be made firm. Therefore, the metallized wiring layer 8
Is a metal having excellent corrosion resistance, such as nickel and gold, having excellent wettability with a brazing material on the exposed surface of 1 μm to 20 μm.
It is preferable that it is applied to a thickness of μm.

【0032】また前記メタライズ配線層8には外部リー
ド端子13が銀ロウ等のロウ材を介してロウ付け取着さ
れており、該外部リード端子13は容器内部に収容する
光半導体素子4の各電極を外部電気回路に電気的に接続
する作用をなし、外部リード端子13を外部電気回路に
接続することによって容器内部に収容される光半導体素
子4はボンディングワイヤ12、メタライズ配線層8及
び外部リード端子13を介して外部電気回路に接続され
ることとなる。
External lead terminals 13 are brazed and attached to the metallized wiring layer 8 via a brazing material such as silver brazing. The external lead terminals 13 are provided for each of the optical semiconductor elements 4 housed in the container. The optical semiconductor element 4 accommodated in the container by connecting the external lead terminal 13 to the external electric circuit serves as a bonding wire 12, a metallized wiring layer 8, and an external lead. The terminal 13 is connected to an external electric circuit.

【0033】前記外部リード端子13は鉄ーニッケルー
コバルト合金や鉄ーニッケル合金等の金属材料から成
り、例えば、鉄ーニッケルーコバルト合金等の金属材料
から成るインゴット(塊)に圧延加工法や打ち抜き加工
法等、従来周知の金属加工法を施すことによって所定の
形状に形成される。
The external lead terminals 13 are made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. For example, an ingot made of a metal material such as an iron-nickel-cobalt alloy is rolled or stamped. It is formed into a predetermined shape by applying a conventionally known metal working method such as a working method.

【0034】更に前記枠体2はその上面に、例えば、鉄
ーニッケルーコバルト合金や鉄ーニツケル合金等の金属
材料から成る蓋部材3が接合され、これによって基体1
と枠体2と蓋部材3とからなる容器の内部に光半導体素
子4が気密に封止されることとなる.前記蓋部材3の枠
体2上面への接合は、例えば、シームウェルド法等の溶
接によって行われる。
Further, a lid member 3 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy is joined to the upper surface of the frame 2 to thereby form the base 1.
The optical semiconductor element 4 is hermetically sealed inside a container composed of the frame member 2 and the lid member 3. The joining of the lid member 3 to the upper surface of the frame 2 is performed by, for example, welding such as a seam welding method.

【0035】かくして本発明の光半導体素子収納用パッ
ケージによれば、基体1の光半導体素子載置部1aに光
半導件素子4を間にペルチェ素子等の電子冷却素子5を
間に挟んで載置固定するとともに光半導体素子4の各電
極をボンデイングワイヤ12を介して外部リード端子3
に電気的こ接続し、次に枠体2の上面に蓋部材3を接合
させ、基体1と枠体2と蓋部材3とから成る容器内部に
光半導体素子4を収容し、最後に枠体2に取着させた筒
状の固定部材9に光ファイバー部材11を取着接続させ
ることによって最終製品としての光半導体装置となる。
Thus, according to the package for housing an optical semiconductor element of the present invention, the optical semiconductor element 4 is interposed between the optical semiconductor element mounting portion 1a of the base 1 and the electronic cooling element 5 such as a Peltier element. While being mounted and fixed, each electrode of the optical semiconductor element 4 is connected to an external lead terminal 3 via a bonding wire 12.
Then, the lid member 3 is joined to the upper surface of the frame 2, and the optical semiconductor element 4 is accommodated in a container including the base 1, the frame 2, and the lid 3, and finally, the frame By attaching and connecting the optical fiber member 11 to the cylindrical fixing member 9 attached to 2, an optical semiconductor device as a final product is obtained.

【0036】かかる光半導体装置は電子冷却素子5によ
り光半導体素子4を冷却しつつ光半導体素子4に外部電
気回路から供給される駆動信号によって光励起を起こさ
せ、該励起した光を透光性部材10を介し光ファイバー
部材11に授受させるとともに該光ファイバー部材11
の光ファイバー内を伝達させることによって高速通信等
に使用される。なお、この場合、電子冷却素子5の発し
た熱が基体1、枠体2、セラミック端子体6及びボンデ
ィングワイヤ12を介して光半導体素子4に作用しよう
としてもその熱の伝達は熱伝導率は約5W/m・kと低
く熱を伝え難いムライト質焼結体から成るセラミック端
子体6の絶縁体7で遮断されて光半導体素子4に作用す
ることはなく、その結果、光半導体素子4の電子冷却素
子5による冷却効率が高いものとなり、低出力の電子冷
却素子でも光半導体素子4を常に適温として光半導体素
子4を長期間にわたり正常、かつ安定に作動させること
が可能となる。
In such an optical semiconductor device, while the optical semiconductor element 4 is cooled by the electronic cooling element 5, optical excitation is caused to the optical semiconductor element 4 by a drive signal supplied from an external electric circuit, and the excited light is transmitted to the light transmitting member. The optical fiber member 11 is transmitted to and received from the optical fiber member 11 through the optical fiber member 11.
It is used for high-speed communication and the like by transmitting through an optical fiber. In this case, even if the heat generated by the electronic cooling element 5 tries to act on the optical semiconductor element 4 via the base 1, the frame 2, the ceramic terminal 6, and the bonding wire 12, the heat is transmitted with a thermal conductivity of It is not interrupted by the insulator 7 of the ceramic terminal body 6 made of a mullite sintered body which is as low as about 5 W / m · k and does not easily conduct heat, and does not act on the optical semiconductor element 4. The cooling efficiency of the electronic cooling element 5 becomes high, and the optical semiconductor element 4 can be normally and stably operated for a long period of time by keeping the optical semiconductor element 4 at an appropriate temperature even with a low-output electronic cooling element.

【0037】また本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能である。
The present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention.

【0038】[0038]

【発明の効果】本発明の光半導体素子収納用パッケージ
によればセラミック端子体の絶縁体を、熱伝導率が約5
W/m・kと低くく熱を伝え難いムライト質焼結体で形
成したことから光半導体素子をペルチェ素子等の電子冷
却素子で冷却しつつ外部電気回路から供給される駆動信
号によって光励起させた場合、電子冷却素子の発した熱
が基体、枠体、セラミック端子体及びボンディングワイ
ヤを介して光半導体素子に作用しようとしてもその熱の
伝達はセラミック端子体で遮断されて光半導体素子に作
用することはなく、その結果、光半導体素子の電子冷却
素子による冷却効率が高いものとなり、低出力の電子冷
却素子でも光半導体素子を常に適温として光半導体素子
を長期間にわたり正常、かつ安定に作動させることが可
能となる。
According to the package for housing an optical semiconductor element of the present invention, the insulator of the ceramic terminal body is made to have a thermal conductivity of about 5%.
Since the optical semiconductor element was formed of a mullite sintered body having a low W / m · k and difficult to conduct heat, the optical semiconductor element was optically excited by a drive signal supplied from an external electric circuit while being cooled by an electronic cooling element such as a Peltier element. In this case, even if the heat generated by the electronic cooling element tries to act on the optical semiconductor element via the base, the frame, the ceramic terminal and the bonding wire, the transfer of the heat is cut off by the ceramic terminal and acts on the optical semiconductor element. As a result, the cooling efficiency of the optical semiconductor element by the electronic cooling element becomes high, and the optical semiconductor element is always kept at an appropriate temperature even with a low-output electronic cooling element to operate the optical semiconductor element normally and stably for a long period of time. It becomes possible.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の光半導体素子収納用パッケージの一実
施例を示す断面図である。
FIG. 1 is a sectional view showing an embodiment of a package for housing an optical semiconductor element of the present invention.

【図2】図1に示す半導体素子収納用パッケージの蓋部
材を除いた平面図である。
FIG. 2 is a plan view of the semiconductor device housing package shown in FIG. 1 without a cover member.

【図3】図1に示す半導体素子収納用パッケージの一部
拡大断面図である。
FIG. 3 is a partially enlarged cross-sectional view of the semiconductor device housing package shown in FIG. 1;

【符号の説明】[Explanation of symbols]

1・・・・・・・・基体 1a・・・・・・・載置部 2・・・・・・・・枠体 2a・・・・・・・貫通孔 2b・・・・・・・切欠部 3・・・・・・・・蓋部材 4・・・・・・・・光半導体素子 5・・・・・・・・電子冷却素子 6・・・・・・・・セラミック端子体 7・・・・・・・・絶縁体 8・・・・・・・・メタライズ配線層 9・・・・・・・・固定部材 10・・・・・・・・透光性部材 11・・・・・・・・光ファイバー部材 1 Base 1a Mounting part 2 Frame 2a Through hole 2b Notch 3 ························································································ Ceramic terminal body 7 ······· Insulator 8 ······ Metalized wiring layer 9 ······ Fixing member 10 ······· Translucent member 11 ··· .... Optical fiber members

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 31/0232 H01L 31/02 C ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 31/0232 H01L 31/02 C

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】上面に光半導体素子が電子冷却素子を介し
て載置される載置部を有する基体と、前記基体上に光半
導体素子載置部を囲繞するようにして取着され、側部に
貫通孔及び切欠部を有する枠体と、前記貫通孔もしくは
貫通孔周辺の枠体に取着され、光ファイバー部材が接合
される筒状の固定部材と、前記切欠部に挿着され、絶縁
体に光半導体素子の各電極が電気的に接続されるメタラ
イズ配線層が形成されているセラミック端子体と、前記
枠体の上面に取着され、光半導体素子を気密に封止する
蓋部材とからなる光半導体素子収納用パッケージであっ
て、前記セラミック端子体の絶縁体がムライト質焼結体
から成ることを特徴とする光半導体素子収納用パッケー
ジ。
1. A base having a mounting portion on which an optical semiconductor element is mounted via an electronic cooling element, and an optical semiconductor element mounted on the base so as to surround the optical semiconductor element mounting portion. A frame having a through-hole and a notch in the portion, a tubular fixing member attached to the through-hole or the frame around the through-hole, and an optical fiber member joined thereto; A ceramic terminal body on which a metallized wiring layer to which each electrode of the optical semiconductor element is electrically connected is formed on the body, and a lid member attached to the upper surface of the frame body and hermetically sealing the optical semiconductor element. An optical semiconductor element housing package comprising: an insulator for the ceramic terminal body comprising a mullite sintered body.
JP10327219A 1998-11-17 1998-11-17 Package for housing optical semiconductor device Pending JP2000150691A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10327219A JP2000150691A (en) 1998-11-17 1998-11-17 Package for housing optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10327219A JP2000150691A (en) 1998-11-17 1998-11-17 Package for housing optical semiconductor device

Publications (1)

Publication Number Publication Date
JP2000150691A true JP2000150691A (en) 2000-05-30

Family

ID=18196652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10327219A Pending JP2000150691A (en) 1998-11-17 1998-11-17 Package for housing optical semiconductor device

Country Status (1)

Country Link
JP (1) JP2000150691A (en)

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