JP2000150365A - Liquid process device - Google Patents

Liquid process device

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Publication number
JP2000150365A
JP2000150365A JP34358198A JP34358198A JP2000150365A JP 2000150365 A JP2000150365 A JP 2000150365A JP 34358198 A JP34358198 A JP 34358198A JP 34358198 A JP34358198 A JP 34358198A JP 2000150365 A JP2000150365 A JP 2000150365A
Authority
JP
Japan
Prior art keywords
substrate
liquid
processing
lcd substrate
rebound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP34358198A
Other languages
Japanese (ja)
Inventor
Kiyohisa Tateyama
清久 立山
Yoshihiro Kawaguchi
義広 川口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP34358198A priority Critical patent/JP2000150365A/en
Publication of JP2000150365A publication Critical patent/JP2000150365A/en
Withdrawn legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent a process liquid splashed from a substrate from re-sticking to the substrate by providing a rebound suppressor inside a process vessel for suppressing rebound of the process liquid splashed from the substrate. SOLUTION: With mesh-like rebound suppressors 54, 55, and 56 provided in triplet inside an outside vessel 51, a process liquid, or a liquid comprising a developer liquid, is suppressed from re-sticking to an LCD substrate G after rebound. The process liquid splashing from the rotating LCD substrate G reduces significantly in splash amount due to the rebound suppressors 54, 55, and 56 while its momentum significantly weakened, to reach the internal peripheral surface of the outside vessel 51. Thus, the amount of process liquid rebounding on the internal peripheral surface of the outside vessel 51 is less, with its momentum weakened. Even if the process liquid reaching the internal peripheral surface of the outside vessel 51 rebounds on the internal peripheral surface, it re-collides with the suppressors 56, 55, and 54 in this order for reduced amount and weakened momentum.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は,基板に対して処理
液を供給して処理する液処理装置に関する。
[0001] 1. Field of the Invention [0002] The present invention relates to a liquid processing apparatus for supplying a processing liquid to a substrate for processing.

【0002】[0002]

【従来の技術】一般に,液晶表示ディスプレイ(LC
D)装置の製造工程においては,LCD基板上に例えば
ITO(Indium Tin Oxide)の薄膜や
電極パターンを形成するために,フォトリソグラフィ技
術を用いて回路パターン等をLCD基板の表面のフォト
レジストに露光し,その後LCD基板を現像処理してい
る。
2. Description of the Related Art Generally, a liquid crystal display (LC)
D) In the manufacturing process of the device, in order to form, for example, a thin film of ITO (Indium Tin Oxide) or an electrode pattern on the LCD substrate, a circuit pattern or the like is exposed on a photoresist on the surface of the LCD substrate using a photolithography technique. After that, the LCD substrate is developed.

【0003】LCD基板に対する現像処理としては,従
来よりパドル方式が使用されている。このパドル方式に
よるLCD基板の現像処理では,先ずスピンチャックに
保持させたLCD基板をカップに収容した後,多数の現
像液吐出口を備えた現像液供給ノズルをLCD基板の長
辺方向に走査させることによりLCD基板の表面に均一
な現像液の液膜を形成する。次いで,このLCD基板を
所定時間静止した後,当該LCD基板を高速で回転させ
ながらLCD基板上の現像液を振り切ると共に,リンス
液を供給して現像液を洗い流している。
[0005] As a developing process for an LCD substrate, a paddle method has been conventionally used. In the paddle type LCD substrate developing process, first, the LCD substrate held by the spin chuck is housed in a cup, and then the developing solution supply nozzle having a large number of developing solution discharge ports is scanned in the long side direction of the LCD substrate. As a result, a uniform liquid film of the developing solution is formed on the surface of the LCD substrate. Next, after the LCD substrate is stopped for a predetermined time, the developing solution on the LCD substrate is shaken off while rotating the LCD substrate at a high speed, and a rinsing liquid is supplied to wash the developing solution.

【0004】[0004]

【発明が解決しようとする課題】しかしながら従来で
は,リンス液の供給時にLCD基板を回転させるため
に,この回転によって当該LCD基板上の現像液やリン
ス液等の処理液が周囲に飛散して,カップの内周面に衝
突する場合があった。そして,従来のカップ内周面は平
滑に形成されているために,飛散した処理液はカップの
内周面で跳ね返ってしまい,LCD基板に再付着する場
合があった。その結果,この再付着する処理液によっ
て,現像処理の不良等を招くおそれがあった。また,飛
散した現像液がカップ内の雰囲気を汚染する場合もあっ
た。このことは,基板上に処理液としてのレジスト液を
拡散させるレジスト塗布装置や,基板上に純水等の洗浄
液を供給して基板を回転させるスクラバ洗浄装置につい
てもあてはまる。
However, in the prior art, since the LCD substrate is rotated when the rinsing liquid is supplied, the rotation causes a processing liquid such as a developing solution or a rinsing liquid on the LCD substrate to scatter around the LCD substrate. There was a case where the inner surface of the cup collided. In addition, since the inner peripheral surface of the conventional cup is formed to be smooth, the scattered processing liquid bounces off the inner peripheral surface of the cup, and may reattach to the LCD substrate. As a result, the re-adhered processing liquid may cause a failure in the development processing. Further, the scattered developer sometimes contaminates the atmosphere in the cup. This also applies to a resist coating apparatus that diffuses a resist solution as a processing liquid onto a substrate, and a scrubber cleaning apparatus that rotates a substrate by supplying a cleaning liquid such as pure water to the substrate.

【0005】本発明はかかる点に鑑みてなされたもので
あり,基板から飛散した処理液が当該基板に再付着しな
い新規な液処理装置を提供することを目的としている。
[0005] The present invention has been made in view of the above, and an object of the present invention is to provide a novel liquid processing apparatus in which a processing liquid scattered from a substrate does not adhere to the substrate again.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に,請求項1によれば,処理容器内の基板上に処理液を
供給し,前記基板を回転させることで,前記処理液を基
板上に拡散又は基板上から振り切るように構成された液
処理装置であって,前記処理容器の内側に,基板から飛
散した処理液の跳ね返りを抑制するための跳ね返り抑制
体を設けたことを特徴とする,液処理装置が提供され
る。
In order to achieve the above object, according to the present invention, a processing liquid is supplied onto a substrate in a processing container, and the processing liquid is supplied to the substrate by rotating the substrate. A liquid processing apparatus configured to be diffused upward or shake off from above a substrate, wherein a bounce suppressor for suppressing bounce of a processing liquid scattered from the substrate is provided inside the processing container. A liquid processing apparatus is provided.

【0007】請求項1に記載の液処理装置にあっては,
回転する基板から飛散した処理液は跳ね返り抑制体と衝
突するために,この抑制体にて跳ね返る処理液の勢いが
弱まる。その結果,基板に到達して再付着する処理液の
量が少なくなる。なお,本明細書でいうところの処理液
とは,現像処理装置における現像液や,レジスト塗布装
置におけるレジスト液はもちろんのこと,スクラバ洗浄
装置や高圧ジェット洗浄装置における純水等の洗浄液も
含むものである。
In the liquid processing apparatus according to the first aspect,
Since the processing liquid scattered from the rotating substrate collides with the rebound suppressing body, the momentum of the processing liquid rebounding by the suppressing body is reduced. As a result, the amount of the processing liquid that reaches the substrate and adheres again is reduced. The processing liquid referred to in the present specification includes not only a developing liquid in a developing processing apparatus and a resist liquid in a resist coating apparatus but also a cleaning liquid such as pure water in a scrubber cleaning apparatus or a high-pressure jet cleaning apparatus. .

【0008】請求項2に記載の発明は,請求項1に記載
の液処理装置において,前記跳ね返り抑制体は,メッシ
ュ状の部材または多数の孔が形成された部材であること
を特徴としている。
According to a second aspect of the present invention, in the liquid processing apparatus of the first aspect, the rebound suppressing member is a mesh-shaped member or a member having a large number of holes.

【0009】請求項2に記載の液処理装置にあっては,
基板から飛散した処理液の一部はメッシュ状の部材であ
る跳ね返り抑制体または多数の孔が形成された部材であ
る跳ね返り抑制体と衝突し,残りは勢いが弱められてメ
ッシュの目や孔を通じて処理容器の内周に到達する。従
って,処理容器の内周に到達する処理液は量が少なくな
り,到達時の勢いも弱まる。その結果,基板への跳ね返
りを抑えることができる。また,処理容器に到達した処
理液がその内壁で跳ね返っても,この跳ね返った処理液
が基板に到達するまでに上記メッシュ状の跳ね返り抑制
体または多数の孔が形成された跳ね返り抑制体と再度衝
突する。従って,この点からも基板への跳ね返りは抑え
られる。
In the liquid processing apparatus according to the second aspect,
A portion of the processing liquid scattered from the substrate collides with the rebound suppressing member, which is a mesh-shaped member, or the rebound suppressing member, which is a member having a large number of holes, and the rest is weakened through the eyes and holes of the mesh. It reaches the inner circumference of the processing vessel. Therefore, the amount of the processing liquid reaching the inner periphery of the processing container is reduced, and the momentum at the time of arrival is reduced. As a result, rebound to the substrate can be suppressed. Further, even if the processing liquid that has reached the processing container rebounds on its inner wall, the processing liquid that has rebounded again collides with the above-described mesh-like rebound suppressing body or the rebound suppressing body having a large number of holes before reaching the substrate. I do. Therefore, also from this point, rebound to the substrate is suppressed.

【0010】請求項3に記載の発明は,請求項2に記載
の液処理装置において,前記跳ね返り抑制体を多重に設
けたことを特徴としている。
According to a third aspect of the present invention, in the liquid processing apparatus according to the second aspect, the rebound suppressing member is provided in a multiplex manner.

【0011】請求項3に記載の液処理装置にあっては,
請求項2に記載の跳ね返り抑制体を多重に設けること
で,次第に勢いが弱められ,また跳ね返り抑制体に衝突
する量が段階的に多くなる。従って,請求項2よりも基
板への跳ね返りをさらに抑えることが可能となる。
[0011] In the liquid processing apparatus according to the third aspect,
By providing multiple rebound suppressing bodies according to the second aspect, the momentum is gradually reduced, and the amount of collision with the rebound suppressing bodies increases stepwise. Therefore, it is possible to further suppress the rebound to the substrate as compared with the second aspect.

【0012】請求項4に記載の発明は,請求項3に記載
の液処理装置において,前記跳ね返り抑制体における開
口率は,基板側に位置する跳ね返り抑制体の方が大きく
設定されていることを特徴としている。
According to a fourth aspect of the present invention, in the liquid processing apparatus according to the third aspect, an aperture ratio of the rebound suppressing member is set to be larger for the rebound suppressing member located on the substrate side. Features.

【0013】請求項4に記載の液処理装置にあっては,
開口率は基板側に位置する跳ね返り抑制体の方が大きく
設定されているために,基板から飛散した処理液は,そ
の勢いが漸次弱められ,また跳ね返り抑制体に衝突する
量が多くなる。従って,最も基板よりに位置する跳ね返
り抑制体自体から処理液の跳ね返る量が少なくなる。ま
た,基板から飛散した処理液が処理容器に到達し,この
処理容器の内壁で跳ね返ったとしても,この処理液は最
も処理容器寄りに位置する開口率の小さい跳ね返り抑制
体自体で跳ね返る量が多くなる。従って,請求項3より
も基板に再付着する処理液が少なくなる。跳ね返り抑制
体がメッシュ状である場合は,基板側の方の目を粗くす
ることによって開口率を大きく設定することができる。
跳ね返り抑制体に多数の孔が形成されている場合には,
孔の径の大小や孔の数によって開口率の大小を設定する
ことができる。
[0013] In the liquid processing apparatus according to the fourth aspect,
Since the aperture ratio is set larger for the rebound suppressing member located on the substrate side, the processing liquid scattered from the substrate is gradually reduced in its momentum, and the amount of the processing liquid colliding with the rebound suppressing member increases. Therefore, the amount of the processing liquid rebounding from the rebound suppressing body located closest to the substrate is reduced. Even if the processing liquid scattered from the substrate reaches the processing container and rebounds on the inner wall of the processing container, the processing liquid rebounds in a large amount by the rebound suppressing body itself having the smallest aperture ratio and located closer to the processing container. Become. Therefore, the amount of the processing liquid re-adhering to the substrate is smaller than in the third aspect. When the rebound suppressing member is in a mesh shape, the aperture ratio can be set large by making the eyes on the substrate side coarse.
If a large number of holes are formed in the bounce control body,
The size of the aperture ratio can be set according to the size of the hole diameter and the number of holes.

【0014】請求項5に記載の発明は,請求項1,2,
3または4に記載の液処理装置において,少なくとも基
板側に位置する跳ね返り抑制体は,処理容器の平面から
見て波形に形成されたことを特徴としている。
The invention according to claim 5 is the invention according to claims 1, 2,
In the liquid processing apparatus described in 3 or 4, at least the bounce suppressor located on the substrate side is formed in a waveform when viewed from the plane of the processing container.

【0015】請求項5に記載の液処理装置にあっては,
基板から飛散した処理液はその一部が跳ね返り抑制体に
よって跳ね返るが,跳ね返り抑制体は平面から見て波形
に形成されている。従って,跳ね返る角度を変えること
ができ,跳ね返った処理液が基板に向けて飛散するのを
抑制することができる。より詳述すれば,基板から飛散
した処理液が跳ね返り抑制体に衝突する際の入射方向に
跳ね返らないように波形の角度を設定することにより,
処理液が基板に向けて飛散することを防止することがで
きる。
In the liquid processing apparatus according to the fifth aspect,
A part of the processing liquid scattered from the substrate is rebounded by the rebound suppressing body, and the rebound suppressing body is formed in a waveform when viewed from a plane. Therefore, the rebound angle can be changed, and the rebound processing liquid can be suppressed from scattering toward the substrate. More specifically, by setting the angle of the waveform so that the processing liquid scattered from the substrate does not rebound in the incident direction when colliding with the rebound suppressing body,
It is possible to prevent the processing liquid from scattering toward the substrate.

【0016】請求項6に記載の発明は,請求項1,2,
3,4または5に記載の液処理装置において,跳ね返り
抑制体を洗浄液で洗浄する洗浄装置を有することを特徴
としている。
The invention according to claim 6 is the invention according to claims 1, 2,
The liquid processing apparatus according to 3, 4, or 5, further comprising a cleaning device for cleaning the bounce suppressing body with a cleaning liquid.

【0017】請求項6に記載の液処理装置にあっては,
跳ね返り抑制体に付着した処理液を洗浄液で洗い流すこ
とができる。従って,この付着した処理液によって処理
容器内が汚染されることを防止することが可能となる。
In the liquid processing apparatus according to the sixth aspect,
The processing liquid attached to the bounce suppressor can be washed away with the cleaning liquid. Therefore, it is possible to prevent the inside of the processing container from being contaminated by the processing liquid that has adhered thereto.

【0018】[0018]

【発明の実施の形態】以下,添付図面を参照しながら本
発明の実施の形態を説明する。図1,2は本実施の形態
にかかる現像処理装置を有する塗布現像処理装置の外観
を示しており,図1は斜視図,図2は平面図である。
Embodiments of the present invention will be described below with reference to the accompanying drawings. 1 and 2 show the appearance of a coating and developing apparatus having the developing apparatus according to the present embodiment. FIG. 1 is a perspective view, and FIG. 2 is a plan view.

【0019】塗布現像処理装置1は図1,2に示すよう
に,例えば矩形状のLCD基板Gを搬入出するローダ部
2と,LCD基板Gを処理する第1の処理部3と,この
第1の処理部3とインターフェイス部4とを介して連設
された第2の処理部5と,この第2の処理部5と例えば
露光装置(図示せず)との間でLCD基板Gを授受する
ためのインターフェイス部7とから構成されている。
As shown in FIGS. 1 and 2, the coating and developing apparatus 1 includes a loader section 2 for loading and unloading a rectangular LCD substrate G, a first processing section 3 for processing the LCD substrate G, and a first processing section 3. A second processing unit 5 connected via a first processing unit 3 and an interface unit 4, and an LCD substrate G is exchanged between the second processing unit 5 and, for example, an exposure apparatus (not shown). And an interface unit 7 for performing the operation.

【0020】ローダ部2にはカセット載置台10が設け
られており,このカセット載置台10には,例えば未処
理のLCD基板Gを収納するカセット11,11と,処
理済みのLCD基板Gが収納されるカセット12,12
とがLCD基板Gの出入口を第1の処理部3側に向けて
一列に載置自在である。またローダ部2には,LCD基
板Gを搬送自在な副搬送装置13が備えられている。
The loader section 2 is provided with a cassette mounting table 10, and the cassette mounting table 10 stores, for example, cassettes 11 for storing unprocessed LCD substrates G and a processed LCD substrate G. Cassettes 12, 12
Can be mounted in a line with the entrance of the LCD substrate G facing the first processing unit 3 side. Further, the loader unit 2 is provided with a sub-transport device 13 capable of transporting the LCD substrate G.

【0021】副搬送装置13は搬送レール13aに沿っ
た方向(Y方向)と,各カセット11,12内のLCD
基板Gの収納方向(Z方向)に移動自在であり,かつθ
方向にも回転自在となるように構成されている。
The sub-transport device 13 is provided with a direction (Y direction) along the transport rail 13a and an LCD in each of the cassettes 11 and 12.
It is movable in the storage direction (Z direction) of the substrate G, and θ
It is configured to be rotatable in any direction.

【0022】第1の処理部3には,LCD基板Gに対し
て所定の処理を施す各種の処理装置が主搬送装置15の
搬送レール16を挟んだ両側に配置されている。即ち,
搬送レール16の一側には,各カセット11,11から
取り出されたLCD基板Gを洗浄するスクラバ洗浄装置
17と,LCD基板Gに対して現像処理を施す現像処理
装置18とが並んで配置され,搬送レール16の他側に
は紫外線オゾン洗浄装置19と,LCD基板Gを冷却処
理する冷却処理装置20,21と,LCD基板Gを加熱
処理する加熱処理装置22とが多段に配置されている。
これら各種の処理装置に対するLCD基板Gの搬入出
は,主搬送装置15に装備された搬送アーム15aによ
り行われる。なお,かかる第1の処理部3と後述する第
2の処理部5との間に形成された前記インターフェイス
部4には,LCD基板Gを載置自在な受け渡し台23が
備えられている。
In the first processing section 3, various processing apparatuses for performing a predetermined processing on the LCD substrate G are disposed on both sides of the transfer rail 16 of the main transfer apparatus 15. That is,
On one side of the transport rail 16, a scrubber cleaning device 17 for cleaning the LCD substrate G taken out of each of the cassettes 11, 11 and a developing device 18 for performing a developing process on the LCD substrate G are arranged side by side. On the other side of the transport rail 16, an ultraviolet ozone cleaning device 19, cooling devices 20 and 21 for cooling the LCD substrate G, and a heating device 22 for heating the LCD substrate G are arranged in multiple stages. .
The loading and unloading of the LCD substrate G to and from these various processing apparatuses is performed by a transfer arm 15a provided in the main transfer device 15. The interface unit 4 formed between the first processing unit 3 and a second processing unit 5 described later is provided with a transfer table 23 on which the LCD substrate G can be mounted.

【0023】第2の処理部5には,主搬送装置25の搬
送レール26を挟んだ一側に,塗布・周辺部除去装置2
7が配置され,この搬送レール26を挟んだ他側には,
LCD基板Gに疎水化処理を施す疎水化処理装置28
と,LCD基板Gを冷却する冷却処理装置29と,加熱
処理装置30,30等が多段に配置されている。なお,
上記主搬送装置25には第2の処理部5に属する各種処
理装置にLCD基板Gを搬入出する搬送アーム25aが
装備されている。
The second processing unit 5 includes a coating / peripheral removing device 2 on one side of the main transporting device 25 across the transporting rail 26.
7 is disposed, and on the other side of the transfer rail 26,
Hydrophobizing device 28 for performing hydrophobizing treatment on LCD substrate G
, A cooling processing device 29 for cooling the LCD substrate G, and heating processing devices 30 and 30 are arranged in multiple stages. In addition,
The main transfer device 25 is provided with a transfer arm 25a for loading and unloading the LCD substrate G to and from various processing devices belonging to the second processing unit 5.

【0024】インターフェイス部7には,LCD基板G
を一時的に収納して待機させるカセット31,31と,
LCD基板Gを載置自在な受け渡し台32と,各カセッ
ト31,31,受け渡し台32,露光装置(図示せず)
に対してLCD基板Gを搬送自在な副搬送装置33とが
装備されている。
The interface unit 7 includes an LCD substrate G
Cassettes 31, 31 for temporarily storing and waiting
A transfer table 32 on which the LCD substrate G can be placed, cassettes 31, 31, a transfer table 32, and an exposure device (not shown)
And a sub-transport device 33 capable of transporting the LCD substrate G.

【0025】塗布現像処理装置1は以上のように構成さ
れている。次に,塗布現像処理装置1に組み込まれた現
像処理装置18について説明する。図3は現像処理装置
18の概略的な平面図であり,図4はその断面図であ
る。
The coating and developing apparatus 1 is configured as described above. Next, the developing device 18 incorporated in the coating and developing device 1 will be described. FIG. 3 is a schematic plan view of the developing device 18, and FIG. 4 is a sectional view thereof.

【0026】現像処理装置18は,ケーシング18a内
にて,LCD基板Gを水平に保持するスピンチャック3
5と,スピンチャック35に保持されたLCD基板Gに
対して現像液を供給する現像液供給ノズル36と,現像
液の供給後にLCD基板Gの表面に脱イオン水または純
水等のリンス液を供給するリンス液供給ノズル37と,
スピンチャック35及びLCD基板Gを包囲するように
配置された処理容器としてのカップ38とを備えてい
る。
The developing device 18 comprises a spin chuck 3 for holding the LCD substrate G horizontally in a casing 18a.
5, a developing solution supply nozzle 36 for supplying a developing solution to the LCD substrate G held by the spin chuck 35, and a rinsing solution such as deionized water or pure water on the surface of the LCD substrate G after supplying the developing solution. A rinsing liquid supply nozzle 37 for supply;
A spin chuck 35 and a cup 38 as a processing container arranged so as to surround the LCD substrate G are provided.

【0027】スピンチャック35の台上面にはエア吸着
部(図示せず)が設けられており,このエア供給部(図
示せず)の吸引によって,スピンチャック35はLCD
基板Gの裏面を吸着して水平に載置するように構成され
ている。さらに,スピンチャック35の下面は,カップ
38の下方に設けられた昇降回転機構39に接続されて
いる支柱40の上面に取り付けられており,昇降回転機
構39の稼働によって,スピンチャック35は昇降移動
かつ回転自在となるように構成されている。
An air suction unit (not shown) is provided on the top surface of the spin chuck 35. The suction of the air supply unit (not shown) causes the spin chuck 35 to move to the LCD.
The rear surface of the substrate G is adsorbed and placed horizontally. Further, the lower surface of the spin chuck 35 is attached to the upper surface of a column 40 connected to an elevating and rotating mechanism 39 provided below the cup 38, and the spin chuck 35 is moved up and down by the operation of the elevating and rotating mechanism 39. And it is comprised so that rotation is possible.

【0028】現像液供給ノズル36はカップ38の上方
に配置されており,その内部に現像液を供給するための
現像液供給チューブ41が接続されている。そして,現
像液供給ノズル36の下面には長手方向に現像液の吐出
口42が密に並んだ状態で設けられており,現像液がこ
れらの吐出口42からLCD基板Gに対して隙間のない
状態で膜状に吐出されるようになっている。また,現像
液供給ノズル36の一端にはブラケット43が接続され
ており,このブラケット43はモータ44によって回転
するボールネジ軸45に係合されている。従って,現像
液供給ノズル36はモータ44によってLCD基板Gの
長辺方向に移動自在となっている。
The developer supply nozzle 36 is arranged above the cup 38, and a developer supply tube 41 for supplying a developer is connected to the inside thereof. On the lower surface of the developing solution supply nozzle 36, the developing solution discharge ports 42 are provided in a state of being densely arranged in the longitudinal direction, so that the developing solution does not have a gap from the discharge ports 42 to the LCD substrate G. In this state, the film is discharged in a film form. A bracket 43 is connected to one end of the developer supply nozzle 36, and the bracket 43 is engaged with a ball screw shaft 45 rotated by a motor 44. Therefore, the developer supply nozzle 36 is movable by the motor 44 in the long side direction of the LCD substrate G.

【0029】リンス液供給ノズル37はカップ38の上
方に配置されており,その上部にはリンス液供給チュー
ブ46が接続され,裏面の2箇所にはリンス液吐出孔4
7が設けられている。そして,リンス液供給ノズル37
は駆動機構(図示せず)によってLCD基板Gの長辺方
向に沿って移動自在となっている。
The rinsing liquid supply nozzle 37 is disposed above the cup 38, and a rinsing liquid supply tube 46 is connected to the upper part thereof.
7 are provided. Then, the rinsing liquid supply nozzle 37
Is movable along the long side direction of the LCD substrate G by a driving mechanism (not shown).

【0030】カップ38は上面が開口した形状を有して
おり,底面に容器下部48と,この容器下部48の外周
を包囲するように配置する容器基部49と,スピンチャ
ック35に保持されたLCD基板Gの裏面側で上向きに
傾斜する傾斜面50aを有する内容器50と,この内容
器50の外周側に配置する外容器51とを有している。
この外容器51は昇降手段(図示せず)によって昇降自
在に形成されている。カップ38の内部で飛散した現像
液及びリンス液は,容器基部49の最下部側の底面に接
続する排液管52から排液され,カップ38内の雰囲気
は容器下部48に接続する排気管53から排気されるよ
うになっている。
The cup 38 has a shape with an open top surface, a lower container portion 48 on the bottom surface, a container base 49 arranged to surround the outer periphery of the lower container portion 48, and an LCD held by the spin chuck 35. The inner container 50 has an inclined surface 50a that is inclined upward on the back side of the substrate G, and an outer container 51 disposed on the outer peripheral side of the inner container 50.
The outer container 51 is formed so as to be able to move up and down by lifting means (not shown). The developer and the rinsing liquid scattered inside the cup 38 are drained from a drain pipe 52 connected to the bottom surface on the lowermost side of the container base 49, and the atmosphere in the cup 38 is changed to an exhaust pipe 53 connected to the container lower part 48. It is designed to be exhausted from.

【0031】さらに,LCD基板Gと外容器51との間
には,跳ね返り抑制体54,55,56が内側から順に
設けられている。これらの跳ね返り抑制体54,55,
56は図5に示すように各々メッシュ状に形成されてお
り,この順にメッシュの目が細かくなっている。即ち,
開口率は最内の跳ね返り抑制体54が最も大きく,次い
で跳ね返り抑制体55,56の順に小さくなっている。
Further, between the LCD substrate G and the outer container 51, anti-bounce members 54, 55 and 56 are provided in order from the inside. These bounce restraints 54, 55,
As shown in FIG. 5, reference numerals 56 are formed in a mesh shape, and the meshes are finer in this order. That is,
The aperture ratio is the largest for the innermost bounce suppressor 54, and then decreases in the order of the bounce suppressors 55 and 56.

【0032】跳ね返り抑制体54,55との間,跳ね返
り抑制体55,56との間,外容器51と跳ね返り抑制
体56との間にはそれぞれスペーサを兼ねた適宜の支持
材(図示せず)が挟まれており,跳ね返り抑制体54,
55の間,跳ね返り抑制体55,56の間,外容器51
と跳ね返り抑制体56との間にはそれぞれ空隙が形成さ
れている。
Appropriate supporting members (not shown) serving also as spacers are provided between the rebound suppressing bodies 54 and 55, between the rebound suppressing bodies 55 and 56, and between the outer container 51 and the rebound suppressing body 56, respectively. Are sandwiched, and the rebound suppressing body 54,
55, between the bounce suppressing bodies 55, 56, the outer container 51
An air gap is formed between the bounce control body 56 and the bounce control body 56.

【0033】跳ね返り抑制体54,55,56の形状
は,外容器51の内周面に沿った略環状の単一の部材で
もよく,また適宜円弧状に分割して,モジュールとした
ものを組み合わせて取り付けてもよい。
The shape of the bounce suppressors 54, 55, 56 may be a single substantially annular member along the inner peripheral surface of the outer container 51, or may be appropriately divided into arcs to form a module. You may attach it.

【0034】本発明の実施の形態にかかる現像処理装置
18は以上のように構成されている。次に,この現像処
理装置18の作用,効果について説明する。
The developing apparatus 18 according to the embodiment of the present invention is configured as described above. Next, the operation and effect of the developing device 18 will be described.

【0035】カセット載置台10上に未処理のLCD基
板Gを収納したカセット11が載置されると,副搬送装
置13がLCD基板Gを1枚取り出し,該LCD基板G
を主搬送装置15に受け渡す。主搬送装置15は以後,
LCD基板Gを紫外線オゾン洗浄装置19,スクラバ洗
浄装置17に順次搬送し,LCD基板Gはこれらの装置
にて所定の処理が施された後,受け渡し台23に搬送さ
れる。
When the cassette 11 containing the unprocessed LCD substrate G is mounted on the cassette mounting table 10, the sub-transport device 13 takes out one LCD substrate G, and
Is transferred to the main transport device 15. The main carrier 15 will be
The LCD substrate G is sequentially conveyed to the ultraviolet ozone cleaning device 19 and the scrubber cleaning device 17. The LCD substrate G is subjected to predetermined processing by these devices, and then conveyed to the transfer table 23.

【0036】受け渡し台23に受け渡されたLCD基板
Gは,主搬送装置25によって,疎水化処理装置28,
冷却処理装置29,塗布・周辺部除去装置27,加熱処
理装置30に順次搬送され,これらの各処理装置にて所
定の処理が施された後,受け渡し台32に搬送される。
受け渡し台32に受け渡されたLCD基板Gは,副搬送
装置33によって,露光装置(図示せず)に搬送されて
露光される。露光処理の終了したLCD基板Gは副搬送
装置33によって受け渡し台32に再度受け渡される。
The LCD substrate G transferred to the transfer table 23 is transferred by the main transfer device 25 to the hydrophobic treatment device 28,
The wafers are sequentially transported to the cooling processing device 29, the coating / peripheral portion removing device 27, and the heating processing device 30, and after being subjected to predetermined processing by these processing devices, are transported to the transfer table 32.
The LCD substrate G transferred to the transfer table 32 is transferred to an exposure device (not shown) by the sub-transfer device 33 and exposed. The LCD substrate G after the exposure processing is transferred again to the transfer table 32 by the sub-transport device 33.

【0037】その後,LCD基板Gは主搬送装置25に
よって,受け渡し台32から加熱処理装置30,冷却処
理装置29に順次搬送されて,これらの処理装置にて熱
処理された後に受け渡し台23に受け渡される。そし
て,このLCD基板Gは主搬送装置15によって受け渡
し台23から現像処理装置18に搬送され,搬送アーム
15aによって上昇したスピンチャック35に受け渡さ
れた後に吸着保持される。
Thereafter, the LCD substrate G is sequentially transferred from the transfer table 32 to the heating processing device 30 and the cooling processing device 29 by the main transfer device 25, and is transferred to the transfer table 23 after being heat-treated by these processing devices. It is. Then, the LCD substrate G is transferred from the transfer table 23 to the developing device 18 by the main transfer device 15 and is transferred to the spin chuck 35 raised by the transfer arm 15a and is held by suction.

【0038】その後,スピンチャック35の下降によっ
て,LCD基板Gはカップ38内に収納される。そし
て,現像液供給ノズル36がLCD基板Gの長辺方向に
沿って,当該LCD基板Gの一端縁から他端縁に向かっ
て現像液を供給しながら走査する。これにより,LCD
基板Gの表面に均一な厚さの現像液の液膜が形成され
る。
Thereafter, the LCD substrate G is accommodated in the cup 38 by lowering the spin chuck 35. Then, the developer supply nozzle 36 scans along the long side direction of the LCD substrate G while supplying the developer from one edge to the other edge of the LCD substrate G. With this, LCD
A liquid film of the developing solution having a uniform thickness is formed on the surface of the substrate G.

【0039】その後,均一な液膜の形成されたLCD基
板Gを所定の時間静止することによりLCD基板Gの表
面を現像する。そして現像の終了したLCD基板Gを回
転させ,LCD基板G上の現像液を振り切ると共に,こ
の回転するLCD基板Gに対してリンス液供給ノズル3
7からリンス液を供給して,LCD基板Gの表面に付着
した現像液を洗い流す。
Thereafter, the surface of the LCD substrate G on which the uniform liquid film has been formed is stopped for a predetermined time to develop the surface of the LCD substrate G. Then, the LCD substrate G after the development is rotated to shake off the developing solution on the LCD substrate G, and the rinsing liquid supply nozzle 3 is supplied to the rotating LCD substrate G.
A rinsing liquid is supplied from 7 to wash away the developer adhering to the surface of the LCD substrate G.

【0040】本実施の形態にあっては図6に示すよう
に,外容器51の内側にメッシュ状の跳ね返り抑制体5
4,55,56を3重にして設けてあるので,処理液,
即ち現像液成分を有する液体が飛散して跳ね返り,LC
D基板Gに再付着することが抑制される。
In the present embodiment, as shown in FIG.
4, 55, 56 are provided in three layers,
That is, the liquid containing the developer component is scattered and rebounds, and LC
Reattachment to the D substrate G is suppressed.

【0041】即ち,回転するLCD基板Gから飛散した
上記処理液は,先ずスピンチャック35側の跳ね返り抑
制体54に到達する。そして,この飛散した処理液の一
部は跳ね返り抑制体54と衝突することによって,跳ね
返り抑制体54を伝って流れ落ち,残りはそのまま通過
して行く。従って,跳ね返り抑制体54を通過して飛散
して行く処理液の量は当初よりも量が少なくなる。また
この衝突で,跳ね返り抑制体54を通過した処理液は勢
いが弱まる。
That is, the processing liquid scattered from the rotating LCD substrate G first reaches the rebound suppressing member 54 on the spin chuck 35 side. Then, a part of the scattered processing liquid collides with the rebound suppressing member 54, flows down the rebound suppressing member 54, and the rest passes as it is. Therefore, the amount of the processing liquid that scatters after passing through the rebound suppressing member 54 is smaller than the amount at the beginning. In addition, due to this collision, the processing liquid that has passed through the rebound suppressing member 54 has a weaker momentum.

【0042】跳ね返り抑制体54を通過した処理液は,
次に跳ね返り抑制体55に到達する。そして,跳ね返り
抑制体55においても,跳ね返り抑制体54の場合と同
様に,飛散する処理液が跳ね返り抑制体55と衝突する
ことによって,跳ね返り抑制体55を通過して飛散して
行く処理液の量が減少し,かつその飛散する勢いも弱ま
る。そしてこの場合,跳ね返り抑制体55は跳ね返り抑
制体54よりも目が細かいために,跳ね返り抑制体55
との衝突で減少する処理液の量は跳ね返り抑制体54の
場合よりも多くなり,かつその勢いもより弱まる。
The processing liquid that has passed through the bounce suppressor 54 is
Next, it reaches the rebound suppressing member 55. Also in the rebound suppressing body 55, as in the case of the rebound suppressing body 54, the amount of the processing liquid that passes through the rebound suppressing body 55 and scatters due to the scattered processing liquid colliding with the rebound suppressing body 55. And the scattered momentum is reduced. In this case, since the bounce suppressing body 55 is finer than the bounce suppressing body 54, the bounce suppressing body 55
The amount of the processing liquid that is reduced by the collision with the liquid is greater than that in the case of the bounce suppressor 54, and the momentum is further reduced.

【0043】跳ね返り抑制体55を通過した処理液は,
次に跳ね返り抑制体56に到達する。そして,この跳ね
返り抑制体56においても,跳ね返り抑制体54,55
の場合と同様に,飛散する処理液の量がさらに減少し,
かつその勢いもさらに弱まる。そして跳ね返り抑制体5
6は跳ね返り抑制体55よりも目が細かいために,跳ね
返り抑制体56との衝突で減少する処理液の量は跳ね返
り抑制体55の場合よりもさらに多くなり,かつその勢
いもさらに弱まる。
The processing liquid that has passed through the bounce suppressor 55 is
Next, it reaches the rebound suppressing member 56. And also in this bounce suppressing body 56, the bounce suppressing bodies 54 and 55
As in the case of, the amount of the scattered processing solution is further reduced,
And the momentum is even weaker. And the bounce suppressing body 5
6 has a finer eye than the rebound suppressing body 55, the amount of the processing liquid that is reduced due to the collision with the rebound suppressing body 56 is larger than that of the rebound suppressing body 55, and the momentum is further reduced.

【0044】こうして,回転するLCD基板Gから飛散
した処理液はこれらの跳ね返り抑制体54,55,56
によって,その飛散する量が大幅に減少し,かつその勢
いも非常に弱まった状態で外容器51の内周面に到達す
る。従って,外容器51の内周面で跳ね返る処理液の量
は少なくなり,その勢いも弱くなる。また外容器51の
内周面に到達した処理液が内周面で跳ね返っても,この
処理液は跳ね返り抑制体56,55,54の順に再度衝
突するために,さらにその量が減少し,かつ勢いも弱ま
る。従って,外容器51の内周面で跳ね返った処理液が
LCD基板Gに再付着することを効果的に抑制すること
ができる。
In this way, the processing liquid scattered from the rotating LCD substrate G is applied to these bounce suppressors 54, 55, 56.
As a result, the amount of scatter is greatly reduced, and the momentum reaches the inner peripheral surface of the outer container 51 in a state where the momentum is extremely weakened. Therefore, the amount of the processing liquid that rebounds on the inner peripheral surface of the outer container 51 decreases, and the momentum also decreases. Further, even if the processing liquid that has reached the inner peripheral surface of the outer container 51 rebounds on the inner peripheral surface, the processing liquid again collides in the order of the bounce suppressors 56, 55, and 54, so that the amount thereof further decreases, and The momentum also weakens. Therefore, it is possible to effectively prevent the processing liquid splashed on the inner peripheral surface of the outer container 51 from re-adhering to the LCD substrate G.

【0045】最も目の粗い,即ち開口率の最も大きな跳
ね返り抑制体54をLCD基板G側に配置しているため
に,LCD基板Gから飛散した処理液は跳ね返り抑制体
54を通過し易くなり,この跳ね返り抑制体54自体で
跳ね返る処理液の量は極めて少ない。従って,跳ね返り
抑制体54で跳ね返った処理液がLCD基板Gに再付着
することを効果的に抑制することができる。
Since the bounce suppressor 54 having the coarsest aperture, that is, the largest aperture ratio, is disposed on the LCD substrate G side, the processing liquid scattered from the LCD substrate G easily passes through the bounce suppressor 54, The amount of the processing liquid that rebounds from the rebound suppressing body 54 itself is extremely small. Therefore, it is possible to effectively suppress the processing liquid rebounded by the rebound suppressing body 54 from re-adhering to the LCD substrate G.

【0046】一方,最も目の細かい,即ち開口率の最も
小さな跳ね返り抑制体56を外容器51側に配置してい
るために,外容器51の内周面で跳ね返った処理液は跳
ね返り抑制体56と衝突する量が多くなって,この跳ね
返り抑制体56を通過しにくくなる。そして,外容器5
1の内周面で跳ね返った処理液が跳ね返り抑制体56を
通過したとしても,その勢いは非常に弱められる。従っ
て,この点からも,外容器51の内周面で跳ね返った処
理液がLCD基板Gに再付着することを効果的に抑制す
ることが可能となる。
On the other hand, since the bounce suppressor 56 having the finest eye, that is, having the smallest aperture ratio, is disposed on the outer container 51 side, the processing liquid bounced on the inner peripheral surface of the outer container 51 is prevented from splashing. The collision amount increases, and it becomes difficult to pass through the rebound suppressing body 56. And outer container 5
Even if the processing liquid that has rebounded on the inner peripheral surface of 1 passes through the rebound suppressing body 56, the momentum is greatly reduced. Therefore, also from this point, it is possible to effectively suppress the processing liquid that has rebounded on the inner peripheral surface of the outer container 51 from re-adhering to the LCD substrate G.

【0047】このように本実施の形態にあっては,回転
するLCD基板Gから飛散した処理液が当該LCD基板
Gに再付着することを効果的に抑制することができる。
従って,前記再付着に起因する現像不良を抑制すること
ができる。また,飛散する処理液は跳ね返り抑制体5
4,55,56を順次通過する度にその勢いが弱まるた
めに,カップ38内の雰囲気の汚染をも効果的に防止可
能となる。
As described above, in the present embodiment, the processing liquid scattered from the rotating LCD substrate G can be effectively prevented from re-adhering to the LCD substrate G.
Accordingly, development defects due to the re-adhesion can be suppressed. In addition, the scattered processing liquid is prevented from splashing.
Since the momentum gradually decreases each time the light passes through 4, 55 and 56, contamination of the atmosphere in the cup 38 can be effectively prevented.

【0048】さらに,これらの跳ね返り抑制体54,5
5,56に対して純水やシンナ等の洗浄液を供給する洗
浄装置(図示せず)を備えるとなおよい。かかる構成に
よれば,跳ね返り抑制体54,55,56に付着した処
理液を洗い流すことができるため,付着した処理液によ
るカップ38内の汚染を効果的に防止することが可能と
なる。
Further, these bounce suppressors 54, 5
It is more preferable to provide a cleaning device (not shown) for supplying a cleaning liquid such as pure water or thinner to the 5, 56. According to such a configuration, the processing liquid attached to the bounce suppressors 54, 55, and 56 can be washed away, so that contamination of the cup 38 due to the attached processing liquid can be effectively prevented.

【0049】かくして,現像液とリンス液との供給が終
了した後は,昇降回転機構39によりLCD基板Gを上
昇させて,このLCD基板Gを現像処理装置18に進入
した搬送アーム15aに受け渡す。その後,LCD基板
Gを受け取った搬送アーム15aが現像処理装置18か
ら退出し,LCD基板Gが現像処理装置18から搬出さ
れる。
After the supply of the developing solution and the rinsing liquid is completed, the LCD substrate G is raised by the elevating / lowering rotating mechanism 39, and the LCD substrate G is transferred to the transfer arm 15a which has entered the developing device 18. . Thereafter, the transfer arm 15a that has received the LCD substrate G retreats from the developing device 18, and the LCD substrate G is carried out of the developing device 18.

【0050】現像処理装置18から搬出されたLCD基
板Gは引き続き加熱処理装置22,冷却処理装置20に
順次搬送されて熱処理される。その後,このLCD基板
Gはローダ部2に搬送され,副搬送装置13に受け渡さ
れる。そして,副搬送装置13がLCD基板Gをカセッ
ト12,12に収納することにより,LCD基板Gに対
する一連の塗布現像処理が終了する。
The LCD substrate G carried out of the developing device 18 is successively transported to the heating device 22 and the cooling device 20 for heat treatment. Thereafter, the LCD substrate G is transported to the loader unit 2 and transferred to the sub-transport device 13. Then, the sub-transport device 13 stores the LCD substrate G in the cassettes 12, 12, thereby completing a series of coating and developing processes on the LCD substrate G.

【0051】なお前記実施の形態にあっては,メッシュ
状の跳ね返り抑制体54,55,56を説明したが,本
発明ではこれらに替えて,図7に示すような多数の孔が
設けられた跳ね返り抑制体60,61,62を外容器5
1の内側に3重にして設けるようにしてもよい。この場
合,跳ね返り抑制体60,61,62に設けられた孔の
径をLCD基板G側から外容器51側にかけて順に小径
となるように形成するとよい。即ち,開口率が跳ね返り
抑制体60,61,62の順で小さくなるように形成す
るとよい。かかる構成により,前期実施の形態で説明し
た跳ね返り抑制体54,55,56のメッシュの目の粗
さに,跳ね返り抑制体60,61,62の孔の径が対応
するので,前記実施の形態の場合と同様の効果を生じる
ようになる。
In the above embodiment, the mesh-like rebound suppressing members 54, 55, and 56 have been described. However, in the present invention, a large number of holes as shown in FIG. The anti-bounce members 60, 61, 62 are placed in the outer container 5
You may make it provide in triple inside 1. In this case, the diameter of the holes provided in the rebound suppressing members 60, 61, and 62 may be gradually reduced from the LCD substrate G side to the outer container 51 side. That is, it is preferable that the aperture ratio be reduced in the order of the bounce suppressors 60, 61, and 62. With this configuration, the diameter of the holes of the rebound suppressing members 60, 61, and 62 corresponds to the roughness of the mesh of the rebound suppressing members 54, 55, and 56 described in the previous embodiment. The same effect as in the case is obtained.

【0052】さらに図8に示すように,LCD基板G側
に位置する跳ね返り抑制体65をカップ38の平面から
見て波形に形成するとなお好ましい。かかる構成によれ
ば,LCD基板Gから飛散した処理液の一部が跳ね返り
抑制体65によって跳ね返っても,この跳ね返り抑制体
65は波形に形成されているため,図9に示すように,
処理液が跳ね返る角度を変化させることができる。即
ち,跳ね返り抑制体65にて跳ね返る処理液は,入射方
向にはそのまま跳ね返らず,LCD基板に向かって飛散
することを防止することができる。その結果,飛散した
処理液がLCD基板Gに再付着することをさらに抑制す
ることが可能となる。
Further, as shown in FIG. 8, it is more preferable that the rebound suppressing member 65 located on the LCD substrate G side is formed in a waveform when viewed from the plane of the cup 38. According to such a configuration, even if a part of the processing liquid scattered from the LCD substrate G is rebounded by the rebound suppressing body 65, the rebound suppressing body 65 is formed in a waveform, so that as shown in FIG.
The angle at which the treatment liquid rebounds can be changed. That is, the processing liquid that rebounds at the rebound suppressing body 65 does not rebound in the incident direction, and can be prevented from scattering toward the LCD substrate. As a result, it is possible to further suppress the scattered processing liquid from re-adhering to the LCD substrate G.

【0053】なお,LCD基板G側に位置する跳ね返り
抑制体65だけでなく他の跳ね返り抑制体61,62に
ついても波形に形成すれば,これらの跳ね返り抑制体6
1,62で処理液が跳ね返る角度を変化させることがで
き,飛散した処理液がLCD基板Gに再付着することを
さらに抑制することが可能となる。もちろん,上記メッ
シュ状の跳ね返り抑制体54,55,56についても,
カップ38の平面から見て波形に形成すれば,上述した
跳ね返り抑制体65,61,62の場合と同様の効果が
生じる。
If not only the bounce suppressors 65 located on the LCD substrate G side but also the other bounce suppressors 61 and 62 are formed in a waveform, these bounce suppressors 6 are formed.
The angle at which the processing liquid rebounds can be changed between 1 and 62, and it is possible to further suppress the scattered processing liquid from re-adhering to the LCD substrate G. Of course, the mesh-like bounce restraints 54, 55, 56 are also
When formed in a waveform when viewed from the plane of the cup 38, the same effect as in the case of the above-described rebound suppressing members 65, 61, and 62 is produced.

【0054】前記実施の形態にあっては,跳ね返り抑制
体54,55,56を3重にした例を挙げて説明した
が,本発明ではこのような3重には限定されず,可能で
あれば跳ね返り抑制体を,例えば5重,6重にしてもよ
い。また,1重,2重であっても,跳ね返りを従来より
抑制することができる。また前期実施の形態では,現像
処理装置18を例に挙げて説明したが,本発明はかかる
現像処理装置18には限定されず,LCD基板Gを回転
させるスクラバ洗浄装置17や塗布・周辺部除去装置2
7等についても応用が可能である。
In the above embodiment, the example in which the bounce suppressors 54, 55, and 56 are tripled has been described. However, the present invention is not limited to such triples, but is possible. For example, the rebound suppressing body may be formed in five or six layers. In addition, even if single or double, rebound can be suppressed more than before. Further, in the first embodiment, the development processing device 18 has been described as an example. However, the present invention is not limited to the development processing device 18, and the scrubber cleaning device 17 for rotating the LCD substrate G and the coating / peripheral removal. Device 2
7 can also be applied.

【0055】さらに使用する基板としてLCD基板を例
に挙げて説明したが,本発明ではLCD基板G以外にも
半導体ウェハやCD基板等についても応用可能である。
Although an LCD substrate has been described as an example of a substrate to be used, the present invention is applicable to a semiconductor wafer, a CD substrate, and the like in addition to the LCD substrate G.

【0056】[0056]

【発明の効果】請求項1〜6に記載の発明では,基板か
ら飛散した処理液が当該基板に再付着することを抑制す
ることができ,基板に対して不良な液処理が起こること
を抑えることが可能となる。
According to the first to sixth aspects of the present invention, it is possible to suppress the processing liquid scattered from the substrate from re-adhering to the substrate, and to suppress the occurrence of defective liquid processing on the substrate. It becomes possible.

【0057】特に請求項3に記載の発明では,多重に設
けられた跳ね返り抑制体によって,基板に対する処理液
の再付着をさらに抑えることが可能となる。
In particular, according to the third aspect of the present invention, it is possible to further suppress the re-adhesion of the processing liquid to the substrate by the multiple bounce-reducing members.

【0058】特に請求項4に記載の発明では,基板から
飛散した処理液が当該基板に再付着することを請求項3
よりも確実に抑制することができる。
In particular, in the invention according to the fourth aspect, the processing liquid scattered from the substrate is reattached to the substrate.
It can be more reliably suppressed.

【0059】特に請求項5に記載の発明では,基板から
飛散した処理液が跳ね返り抑制体で跳ね返っても,この
跳ね返った処理液が基板に向けて飛散することを防止す
ることができる。
In particular, according to the fifth aspect of the present invention, even if the processing liquid scattered from the substrate rebounds by the rebound suppressing member, the repelled processing liquid can be prevented from being scattered toward the substrate.

【0060】特に請求項6に記載の発明では,跳ね返り
抑制体に付着した処理液による処理容器内の汚染を防止
することが可能となる。
In particular, according to the invention of claim 6, it is possible to prevent contamination of the processing vessel due to the processing liquid attached to the bounce suppressing member.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態にかかる現像処理装置を有
する塗布現像処理装置の外観を示す斜視図である。
FIG. 1 is a perspective view showing the appearance of a coating and developing apparatus having a developing apparatus according to an embodiment of the present invention.

【図2】図1の塗布現像処理装置の平面図である。FIG. 2 is a plan view of the coating and developing apparatus of FIG. 1;

【図3】本発明の実施の形態にかかる現像処理装置の概
略的な平面図である。
FIG. 3 is a schematic plan view of a developing apparatus according to the embodiment of the present invention.

【図4】図3の現像処理装置の断面図である。FIG. 4 is a cross-sectional view of the developing device of FIG.

【図5】図3の現像処理装置に装備された跳ね返り抑制
体の配置及び構成を示す斜視図である。
FIG. 5 is a perspective view showing the arrangement and configuration of a bounce suppressor provided in the developing device of FIG. 3;

【図6】図5の跳ね返り抑制体にLCD基板から処理液
が飛散する様子を示す説明図である。
FIG. 6 is an explanatory view showing a state in which a processing liquid is scattered from an LCD substrate on the bounce suppressor of FIG. 5;

【図7】図5の跳ね返り抑制体の他の例を示す斜視図で
ある。
FIG. 7 is a perspective view showing another example of the bounce suppressing body of FIG. 5;

【図8】波形に形成した跳ね返り抑制体の平面図であ
る。
FIG. 8 is a plan view of a rebound suppressing body formed in a waveform.

【図9】図8の跳ね返り抑制体にLCD基板から処理液
が飛散する様子を示す説明図である。
FIG. 9 is an explanatory view showing a state in which the processing liquid scatters from the LCD substrate to the bounce suppressor of FIG. 8;

【符号の説明】[Explanation of symbols]

1 塗布現像処理装置 18 現像処理装置 38 カップ 51 外容器 54,55,56 跳ね返り抑制体 G LCD基板 DESCRIPTION OF SYMBOLS 1 Coating / developing apparatus 18 Developing apparatus 38 Cup 51 Outer container 54, 55, 56 Anti-bounce body G LCD substrate

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2H025 AB16 AB17 FA15 2H096 AA25 AA27 GA33 4G075 AA13 AA24 CA57 EB01 ED01 ED13 EE12 FA02 FA03 FA06 5F046 CD01 CD03 CD06 LA06 LA18 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H025 AB16 AB17 FA15 2H096 AA25 AA27 GA33 4G075 AA13 AA24 CA57 EB01 ED01 ED13 EE12 FA02 FA03 FA06 5F046 CD01 CD03 CD06 LA06 LA18

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 処理容器内の基板上に処理液を供給し,
前記基板を回転させることで,前記処理液を基板上に拡
散又は基板上から振り切るように構成された液処理装置
であって,前記処理容器の内側に,基板から飛散した処
理液の跳ね返りを抑制するための跳ね返り抑制体を設け
たことを特徴とする,液処理装置。
1. A processing liquid is supplied onto a substrate in a processing container,
A liquid processing apparatus configured to spread the processing liquid on the substrate or shake off the processing liquid from the substrate by rotating the substrate, and suppresses rebound of the processing liquid scattered from the substrate inside the processing container. A liquid treatment device, comprising a bounce suppressor for performing the treatment.
【請求項2】 前記跳ね返り抑制体は,メッシュ状の部
材または多数の孔が形成された部材であることを特徴と
する,請求項1に記載の液処理装置。
2. The liquid processing apparatus according to claim 1, wherein the bounce suppressing member is a mesh-shaped member or a member having a plurality of holes formed therein.
【請求項3】 前記跳ね返り抑制体を多重に設けたこと
を特徴とする,請求項2に記載の液処理装置。
3. The liquid processing apparatus according to claim 2, wherein the bounce suppressors are provided in a multiplex manner.
【請求項4】 前記跳ね返り抑制体における開口率は,
基板側に位置する跳ね返り抑制体の方が大きく設定され
ていることを特徴とする,請求項3に記載の液処理装
置。
4. An aperture ratio of the bounce suppressor is:
4. The liquid processing apparatus according to claim 3, wherein the bounce suppressor located on the substrate side is set larger.
【請求項5】 少なくとも基板側に位置する跳ね返り抑
制体は,処理容器の平面から見て波形に形成されたこと
を特徴とする,請求項1,2,3または4に記載の液処
理装置。
5. The liquid processing apparatus according to claim 1, wherein the bounce suppressor located at least on the substrate side is formed in a waveform when viewed from the plane of the processing container.
【請求項6】 跳ね返り抑制体を洗浄液で洗浄する洗浄
装置を有することを特徴とする,請求項1,2,3,4
または5に記載の液処理装置。
6. The cleaning device according to claim 1, further comprising a cleaning device for cleaning the bounce suppressing member with a cleaning liquid.
Or the liquid processing apparatus according to 5.
JP34358198A 1998-11-17 1998-11-17 Liquid process device Withdrawn JP2000150365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34358198A JP2000150365A (en) 1998-11-17 1998-11-17 Liquid process device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34358198A JP2000150365A (en) 1998-11-17 1998-11-17 Liquid process device

Publications (1)

Publication Number Publication Date
JP2000150365A true JP2000150365A (en) 2000-05-30

Family

ID=18362641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34358198A Withdrawn JP2000150365A (en) 1998-11-17 1998-11-17 Liquid process device

Country Status (1)

Country Link
JP (1) JP2000150365A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016225544A (en) * 2015-06-02 2016-12-28 信越半導体株式会社 Cleaning treatment device for semiconductor silicon wafer and cleaning method of semiconductor silicon wafer
WO2023040465A1 (en) * 2021-09-14 2023-03-23 盛美半导体设备(上海)股份有限公司 Electroplating apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016225544A (en) * 2015-06-02 2016-12-28 信越半導体株式会社 Cleaning treatment device for semiconductor silicon wafer and cleaning method of semiconductor silicon wafer
WO2023040465A1 (en) * 2021-09-14 2023-03-23 盛美半导体设备(上海)股份有限公司 Electroplating apparatus

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