JP2000097564A - Substrate dryer and substrate dryer/cleaner - Google Patents

Substrate dryer and substrate dryer/cleaner

Info

Publication number
JP2000097564A
JP2000097564A JP10265891A JP26589198A JP2000097564A JP 2000097564 A JP2000097564 A JP 2000097564A JP 10265891 A JP10265891 A JP 10265891A JP 26589198 A JP26589198 A JP 26589198A JP 2000097564 A JP2000097564 A JP 2000097564A
Authority
JP
Japan
Prior art keywords
substrate
drying
container
cleaning
substrate support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10265891A
Other languages
Japanese (ja)
Inventor
Akira Nakabayashi
亮 中林
Satoshi Amano
智 天野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10265891A priority Critical patent/JP2000097564A/en
Publication of JP2000097564A publication Critical patent/JP2000097564A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To prevent the occurrence of unacceptable substrate by making an exhaust opening in the substantially horizontal extension of the substrate supporting face of a substrate supporting table thereby suppressing readhesion of mist to a substrate at the time of rotary drying a cleaned substrate. SOLUTION: An exhaust opening 6c is made in the substantially horizontal extension of the substrate supporting face of a substrate supporting table 2. A large number of exhaust openings 6a, 6b are made in a tubular side wall 4b over the entire circumference thereof and a large number of exhaust openings 6a are made similarly in a tubular side wall 4a over the entire circumference of the tubular side wall 4b. When a substrate 1 is dried by turning at high speed while ejecting dry gas 8 from a dry gas nozzle 7, air flow is discharged well to an apparatus 4 through exhaust openings 6c, 6b, 6a because of the exhaust opening 6c made in the horizontal extension of the upper surface of the substrate 1. Since an air flow ascending onto the substrate 1 along the side wall 4b is not generated, mist is prevented from falling onto the substrate 1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、LCD(リキッド
クリスタル ディスプレイ。すなわち、液晶表示素子や
液晶表示パネル)や、半導体装置等の製造プロセスにお
いて、該LCDの基板や半導体装置のウェハ等の各種基
板を洗浄、乾燥する基板乾燥装置および基板洗浄乾燥装
置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to various substrates such as LCD (Liquid Crystal Display), that is, liquid crystal display elements and liquid crystal display panels, and semiconductor devices in the manufacturing process thereof. The present invention relates to a substrate drying apparatus for cleaning and drying a substrate and a substrate cleaning / drying apparatus.

【0002】[0002]

【従来の技術】LCDには、薄膜トランジスタ(TF
T)等をスイッチング素子として用いたアクティブ・マ
トリクス方式LCDや、超ねじれネマチック液晶(ST
N液晶)を用いた単純マトリクス方式LCDがある。
2. Description of the Related Art LCDs have thin film transistors (TF).
T) etc. as switching elements, an active matrix type LCD or a super twisted nematic liquid crystal (ST)
There is a simple matrix type LCD using N liquid crystal).

【0003】例えば、前者のTFT−LCDを製造する
ために、ガラス等からなる透明絶縁基板上に各種薄膜を
形成し、TFT基板(TFTを形成する側の基板)を形
成するプロセスにおいては、通常、ゲート配線、ゲート
絶縁膜、a−Si膜、ドレイン配線、画素電極、保護膜
等の各薄膜を成膜する前(レジスト塗布前)に、基板洗
浄装置および基板乾燥装置を使用し、純水や薬液等の洗
浄液を用いて該ガラス基板の洗浄を行っている。また、
各薄膜を所定のパターンに加工する、ホトリソグラフィ
工程においても、レジスト膜現像後の現像液の除去、各
薄膜のウェットエッチング後のエッチング液の除去、レ
ジスト膜剥離後の剥離液の除去のため、洗浄液を用い、
該基板の洗浄が施される。
For example, in order to manufacture the former TFT-LCD, in a process of forming various thin films on a transparent insulating substrate made of glass or the like and forming a TFT substrate (substrate on which the TFT is formed), a process is usually performed. Before forming each thin film such as a gate wiring, a gate insulating film, an a-Si film, a drain wiring, a pixel electrode, and a protective film (before applying a resist), use a substrate cleaning device and a substrate drying device to remove pure water. The glass substrate is cleaned using a cleaning liquid such as a chemical or a chemical solution. Also,
Processing each thin film into a predetermined pattern, also in the photolithography process, for removing the developer after developing the resist film, removing the etchant after wet etching of each thin film, removing the stripper after removing the resist film, Using a cleaning solution,
The substrate is cleaned.

【0004】基板を洗浄する際は、基板洗浄能力を向上
させるため、基板を支持した台を高速で回転(スピン)
させながら基板上に多量の洗浄液を放水する。また、基
板洗浄後は、基板乾燥装置において、同様に基板を支持
した台を高速で回転させつつ、乾燥ガスを基板上に噴出
させ、基板の乾燥を行う。
When cleaning a substrate, a table supporting the substrate is rotated at a high speed (spin) in order to improve the substrate cleaning ability.
A large amount of cleaning liquid is discharged onto the substrate while the cleaning is being performed. After the substrate is washed, the substrate is dried by ejecting a drying gas onto the substrate while rotating the stage supporting the substrate at a high speed in the substrate drying apparatus.

【0005】なお、生産性の向上および表示画面の大型
化のため、各LCD製造用基板をなるべく多数枚取るた
め、複数枚取り基板の大型化が急速に進行している。ま
た、基板洗浄工程は、歩留りを左右する重要な工程であ
る。
In order to improve the productivity and increase the size of the display screen, a large number of substrates are manufactured rapidly in order to obtain as many substrates as possible for each LCD. Further, the substrate cleaning step is an important step that affects the yield.

【0006】800ドット×600ドットのTFT−L
CDの画素数は、1枚当たり144万もあり、これらの
配線の断線やショート、ゲート配線とドレイン配線との
層間ショート、あるいはTFTの電気特性不良などが存
在すると、点灯表示したときに、色彩がその周囲と線状
に異なる線欠陥、あるいは局所的に色彩が異なる点欠陥
などの表示不良が発生する。
[0006] 800 dot x 600 dot TFT-L
The number of pixels of a CD is 1.44 million, and if there is a disconnection or short-circuit of these wirings, an interlayer short-circuit between a gate wiring and a drain wiring, or a defective electrical characteristic of a TFT, the color of the light is increased. However, display defects such as a line defect different from the surroundings linearly or a point defect having a locally different color occur.

【0007】図8は従来の基板乾燥装置を示す図であ
り、(a)は概略外観斜視図、(b)は洗浄乾燥する基
板が小さい場合の装置の概略断面図、(c)は基板が大
きい場合の装置の概略断面図である。
FIGS. 8A and 8B show a conventional substrate drying apparatus. FIG. 8A is a schematic perspective view of the apparatus, FIG. 8B is a schematic sectional view of the apparatus when the substrate to be cleaned and dried is small, and FIG. It is a schematic sectional drawing of an apparatus when it is large.

【0008】1は乾燥すべき基板、2は基板支持台、2
aは基板ステージ基底部、2bは基板支持用ピン、2c
は基板固定用ピン、3は基板支持台1の回転機構、4は
基板乾燥装置、4aは装置外壁、4bは側壁、4cは装
置4の上部開口、4dは上部開口4cに設けたフィル
タ、5は排水口、6aは外壁4aの排気口、6bは側壁
4bの排気口、7は乾燥ガスノズル、8は乾燥ガスであ
る。矢印は気流を示す。
1 is a substrate to be dried, 2 is a substrate support, 2
a is a substrate stage base, 2b is a substrate support pin, 2c
Is a pin for fixing the substrate, 3 is a rotation mechanism of the substrate support table 1, 4 is a substrate drying device, 4a is an outer wall of the device, 4b is a side wall, 4c is an upper opening of the device 4, 4d is a filter provided in an upper opening 4c, 5 Is a drain port, 6a is an exhaust port of the outer wall 4a, 6b is an exhaust port of the side wall 4b, 7 is a drying gas nozzle, and 8 is a drying gas. Arrows indicate airflow.

【0009】外壁4aと側壁4bは、(a)に示すよう
に、共にほぼ円筒状をなし、同軸である。別の洗浄装置
によって洗浄された基板1を支持台2に載置支持し、装
置4内で回転機構3により高速で回転させながら、乾燥
ガスノズル7から窒素(N2)ガス等の乾燥ガス8を基
板1表面上に噴出させ、回転乾燥を行う。このとき、基
板1上に付着している洗浄液は、排水口5から基板1外
へ排水される。
The outer wall 4a and the side wall 4b are both substantially cylindrical and coaxial as shown in FIG. The substrate 1 cleaned by another cleaning device is placed and supported on the support base 2, and while the substrate 1 is rotated at a high speed by the rotating mechanism 3 in the device 4, a drying gas 8 such as nitrogen (N 2 ) gas is supplied from the drying gas nozzle 7. It is spouted onto the surface of the substrate 1 to perform spin drying. At this time, the cleaning liquid adhering to the substrate 1 is drained out of the substrate 1 through the drain port 5.

【0010】外壁4aおよび側壁4bは、回転乾燥時の
基板1上に付着した洗浄液を受け止め、排水口5から流
すため、基板1の周囲を覆う機能を有する。気流は内壁
4bおよび外壁4aの各排気口6b、6aから装置4外
へ排気される。側壁4bは、基板1の近傍周囲を取り囲
み、基板1の回転乾燥時の気流を効率的に排気口6b、
6aを介して装置4の外に流す機能を有する。
The outer wall 4a and the side wall 4b have a function of receiving the cleaning liquid adhering to the substrate 1 at the time of spin-drying and flowing from the drain port 5 so as to cover the periphery of the substrate 1. The airflow is exhausted out of the device 4 from the exhaust ports 6b, 6a of the inner wall 4b and the outer wall 4a. The side wall 4b surrounds the periphery of the vicinity of the substrate 1, and efficiently exhausts the airflow when the substrate 1 is rotated and dried.
It has a function of flowing out of the device 4 via 6a.

【0011】[0011]

【発明が解決しようとする課題】図8(a)、(b)に
示すような構造の従来の基板乾燥装置4において、基板
1上に乾燥ガスノズル7から乾燥ガス8を噴出させなが
ら、基板毎分回転数1000rpm以上の高速回転させ
て乾燥させたところ、高速回転により側壁4b内の基板
1端部近傍に発生する乱流によって、側壁4bに沿って
基板1上へ舞い上がる気流(逆流成分:矢印aで示す)
が発生する。乾燥時の気流は、基板1表面に付着した水
切り処理によって生じる汚染水のミストを含んでおり、
この舞い上がる気流aによりミストが基板1上に降りか
かることになる。
In a conventional substrate drying apparatus 4 having a structure as shown in FIGS. 8A and 8B, while drying gas 8 is blown out from a drying gas nozzle 7 onto a substrate 1, each substrate is dried. When the substrate was dried by rotating at a high speed of 1000 rpm or more, the turbulence generated near the end of the substrate 1 in the side wall 4b due to the high speed rotation caused the air current to fly over the substrate 1 along the side wall 4b (backflow component: arrow a)
Occurs. The air flow at the time of drying contains a mist of contaminated water generated by the draining process attached to the surface of the substrate 1,
The mist falls on the substrate 1 due to the soaring air current a.

【0012】このように、乾燥時においてミストは基板
1表面に再付着し、その結果、基板1上に微小な水しみ
が残ってしまう。この微小な水しみは基板1上に形成す
る堆積薄膜界面における汚染となり、配線欠陥などの不
良の原因となる。なお、基板回転数が増加するほど、乱
流が発生しやすくなり、乾燥能力が向上する反面、逆に
汚染水の再付着が生じやすい。
As described above, during drying, the mist adheres to the surface of the substrate 1 again, and as a result, minute water stains remain on the substrate 1. These minute water stains cause contamination at the interface of the deposited thin film formed on the substrate 1 and cause defects such as wiring defects. In addition, as the number of rotations of the substrate increases, turbulence is more likely to occur, and the drying ability is improved. On the other hand, reattachment of contaminated water is more likely to occur.

【0013】また、このような現象は、図8(c)に示
すように、基板面積が大きくなるほど、側壁4bと基板
1端部間の距離が短くなるため発生しやすい。このた
め、大型基板を用いて製造する際、製造歩留りに対して
極めて甚大な影響を受けることになる。なお、この対策
には、排気能力を強化し、気流上昇を抑制すること、あ
るいは基板1の寸法に比べて側壁4bの内径をなるべく
大きくすることが考えられる。排気能力を増加すると、
運転コストが上昇し、製造コストが増大する。また、基
板1の大型化に伴い、装置4も大きくしなければならな
い。しかし、装置4の占有面積を抑えるため、できるだ
け装置4を小型化したい要望もある。さらに、乾燥時の
基板回転数を少なくすれば、気流上昇は抑制できるが、
基板を乾燥することが困難となる。
Further, as shown in FIG. 8C, such a phenomenon tends to occur because the distance between the side wall 4b and the end of the substrate 1 becomes shorter as the substrate area becomes larger. For this reason, when manufacturing using a large-sized substrate, the manufacturing yield is significantly affected. As a countermeasure, it is conceivable to enhance the exhaust capacity and suppress the rise of the airflow, or to increase the inner diameter of the side wall 4b as much as possible compared to the dimensions of the substrate 1. Increasing the exhaust capacity,
Operating costs increase and manufacturing costs increase. In addition, as the size of the substrate 1 increases, the size of the device 4 must be increased. However, there is a demand to reduce the size of the device 4 as much as possible in order to reduce the area occupied by the device 4. Furthermore, if the number of rotations of the substrate during drying is reduced, the rise in airflow can be suppressed,
It becomes difficult to dry the substrate.

【0014】なお、このような問題は、液晶表示素子に
限らず、半導体装置の製造におけるウェーハ等の基板に
ついても同様である。
[0014] Such a problem is not limited to a liquid crystal display element, but also applies to a substrate such as a wafer in the manufacture of a semiconductor device.

【0015】また、別の洗浄装置で洗浄した洗浄後の基
板の乾燥のみを単独で行う上記基板乾燥装置の他、基板
の洗浄乾燥を一貫して行う基板洗浄乾燥装置もある。
In addition to the above-described substrate drying apparatus that performs only drying of a substrate after cleaning by another cleaning apparatus, there is also a substrate cleaning and drying apparatus that performs cleaning and drying of a substrate consistently.

【0016】本発明の目的は、排気能力を増大すること
なく、基板洗浄後の回転乾燥時に発生するミストの基板
への再付着を抑制し、ミストに起因する不良の発生を防
止できる基板乾燥装置および基板洗浄乾燥装置を提供す
ることにある。さらに、基板の大型化に対応でき、でき
るだけ小型化できる基板乾燥および基板洗浄乾燥装置を
提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate drying apparatus capable of suppressing the re-adhesion of mist generated during rotation drying after cleaning of a substrate to a substrate without increasing the exhaust capacity, and preventing the occurrence of defects caused by the mist. And a device for cleaning and drying the substrate. It is still another object of the present invention to provide a substrate drying and substrate cleaning / drying apparatus which can cope with an increase in the size of a substrate and can be made as small as possible.

【0017】[0017]

【課題を解決するための手段】前記課題を解決するため
に、本発明による基板乾燥装置は、乾燥する基板を載置
支持する基板支持台と、前記基板支持台を回転させる回
転機構と、前記基板支持台の周囲を覆う容器と、前記基
板支持台の基板支持面のほぼ水平延長面に開口する排気
口とを有することを特徴とする。
In order to solve the above-mentioned problems, a substrate drying apparatus according to the present invention includes a substrate support for mounting and supporting a substrate to be dried, a rotation mechanism for rotating the substrate support, It has a container that covers the periphery of the substrate support, and an exhaust port that opens to a substantially horizontal extension of the substrate support surface of the substrate support.

【0018】なお、「ほぼ」というのは、前記排気口は
基板支持台の基板支持面、すなわち、基板上面の厳密に
水平延長面に開口することを意味せず、多少ずれてもよ
いことを意味する。
The word "substantially" does not mean that the exhaust port is opened on the substrate supporting surface of the substrate supporting table, that is, a strictly horizontal extension surface of the upper surface of the substrate. means.

【0019】また、前記基板支持台上に乾燥ガス噴出ノ
ズルを有することを特徴とする。
[0019] Further, a dry gas jet nozzle is provided on the substrate support table.

【0020】また、前記容器が内壁と外壁とを有し、前
記内壁に前記排気口を複数個設け、前記外壁にも排気口
を複数個設けたことを特徴とする。
Further, the container has an inner wall and an outer wall, the inner wall is provided with a plurality of exhaust ports, and the outer wall is also provided with a plurality of exhaust ports.

【0021】また、前記容器が内側容器と外側容器とを
有し、前記内側容器に前記排気口を複数個設け、前記外
壁にも排気口を複数個設け、前記基板乾燥時に前記内側
容器を回転させる回転機構を有することを特徴とする。
Further, the container has an inner container and an outer container, the inner container has a plurality of exhaust ports, the outer wall has a plurality of exhaust ports, and the inner container rotates when the substrate is dried. It is characterized by having a rotating mechanism for causing the rotation.

【0022】また、本発明による基板洗浄乾燥一貫装置
は、基板を載置支持する基板支持台と、前記基板支持台
を回転させる回転機構と、前記基板支持台の周囲を覆う
容器と、洗浄液の排水口と、前記基板洗浄時に遮蔽さ
れ、前記基板乾燥時に開放状態となり、前記基板支持台
の基板支持面のほぼ水平延長面に開口する第1の排気口
とを有することを特徴とする。
Further, the substrate cleaning and drying apparatus according to the present invention comprises a substrate support for mounting and supporting a substrate, a rotation mechanism for rotating the substrate support, a container for covering the periphery of the substrate support, A drain port and a first exhaust port that is shielded during the cleaning of the substrate and that is open when the substrate is dried and that opens to a substantially horizontal extension of the substrate support surface of the substrate support stand.

【0023】さらに、前記容器が内側容器と外側容器と
を有し、一方の前記容器に前記第1の排気口を複数個設
け、他方の前記容器にも第2の排気口を複数個設け、前
記基板洗浄時に、前記第1の排気口が前記他方の容器の
壁により遮蔽され、前記基板乾燥時に、前記第1の排気
口が前記基板支持台のほぼ水平延長面に開口するように
前記両容器の少なくとも一方が上下方向に相対的に移動
し、開放状態となることを特徴とする。
Further, the container has an inner container and an outer container, one of the containers has a plurality of the first exhaust ports, and the other of the containers has a plurality of the second exhaust ports, The first exhaust port is shielded by the wall of the other container during the substrate cleaning, and the first exhaust port is opened to a substantially horizontal extension surface of the substrate support table when the substrate is dried. It is characterized in that at least one of the containers is relatively moved in the up-down direction and is opened.

【0024】本発明の装置では、基板の洗浄や乾燥を実
施する容器(カップ)に、洗浄液を集めて排水口から排
水するという機能を持たせると共に、乾燥時に、容器内
の気流が効率良く排気口から容器外へ流れるようにし、
基板表面上に逆流しないような構造とする。すなわち、
本発明では、基板支持台のほぼ水平延長面に開口する排
気口を設けることにより、基板乾燥時の気流上昇成分が
この排気口から効率良く装置外へ排気されるため、ミス
トの基板への再付着を抑制することができる。
According to the apparatus of the present invention, the container (cup) for cleaning and drying the substrate has a function of collecting the cleaning liquid and draining it from the drain port, and the air flow in the container is efficiently exhausted during drying. Let it flow out of the container through the mouth,
The structure is such that backflow does not occur on the substrate surface. That is,
In the present invention, by providing an exhaust port that opens on the substantially horizontal extension surface of the substrate support, the airflow rising component during substrate drying is efficiently exhausted from the exhaust port to the outside of the apparatus. Adhesion can be suppressed.

【0025】[0025]

【発明の実施の形態】以下、図面を用いて本発明の実施
の形態について詳細に説明する。なお、以下で説明する
図面で、同一機能を有するものは同一符号を付け、その
繰り返しの説明は省略する。
Embodiments of the present invention will be described below in detail with reference to the drawings. In the drawings described below, those having the same functions are denoted by the same reference numerals, and the repeated description thereof will be omitted.

【0026】実施の形態1 図1は本発明の実施の形態1の基板乾燥装置を示す図で
あり、(a)は概略外観斜視図、(b)は概略断面図で
ある。
Embodiment 1 FIGS. 1A and 1B show a substrate drying apparatus according to Embodiment 1 of the present invention, wherein FIG. 1A is a schematic external perspective view and FIG. 1B is a schematic sectional view.

【0027】1は乾燥すべき基板、2は基板支持台(基
板ステージ、または基板チャックとも称される)、2a
は基板ステージ基底部、2bは基板支持用ピン、2cは
基板固定用ピン、3は基板支持台1の回転機構、4は基
板乾燥装置、4aは装置外壁、4bは側壁、4dは装置
4の上部開口、4eは上部開口4dに設けたフィルタ、
5は排水口、6aは外壁4aの排気口、6b、6cは側
壁4bの排気口、7は乾燥ガスノズル、8は乾燥ガスで
ある。矢印は気流を示す。
1 is a substrate to be dried, 2 is a substrate support (also called a substrate stage or a substrate chuck), 2a
Is a base of the substrate stage, 2b is a pin for supporting the substrate, 2c is a pin for fixing the substrate, 3 is a rotating mechanism of the substrate support 1, 4 is a drying device for the substrate, 4a is an outer wall of the device, 4b is a side wall, 4d is a side of the device 4, A filter provided in the upper opening 4d;
Reference numeral 5 denotes a drain port, 6a denotes an exhaust port of the outer wall 4a, 6b and 6c denote exhaust ports of the side wall 4b, 7 denotes a drying gas nozzle, and 8 denotes a drying gas. Arrows indicate airflow.

【0028】図6は基板支持台の詳細を示す概略外観斜
視図で、(a)は基板搬入出時、(b)は基板設置状態
を示す。
FIGS. 6A and 6B are schematic external perspective views showing the details of the substrate support table. FIG. 6A shows the state of loading and unloading the substrate, and FIG.

【0029】(a)の2dは基板支持台2上に基板1の
搬入および搬出を行うローダーアームである。
2A is a loader arm for carrying the substrate 1 in and out of the substrate support 2.

【0030】外壁4aと側壁4bは、(a)に示すよう
に、共にほぼ円筒状をなし、同軸である。別の洗浄装置
によって洗浄された基板1を支持台2に載置支持し、装
置4内で回転機構3により高速で回転させながら、乾燥
ガスノズル7から窒素(N2)ガス等の乾燥ガス8を基
板1表面上に噴出させ、回転乾燥を行う。このとき、基
板支持台2の回転により、気流は(b)の矢印に示すよ
うに生じる。また、基板1上に付着している洗浄液は、
排水口5から基板1外へ排水される。
The outer wall 4a and the side wall 4b are both substantially cylindrical and coaxial as shown in FIG. The substrate 1 cleaned by another cleaning device is placed and supported on the support base 2, and while the substrate 1 is rotated at a high speed by the rotating mechanism 3 in the device 4, a drying gas 8 such as nitrogen (N 2 ) gas is supplied from the drying gas nozzle 7. It is spouted onto the surface of the substrate 1 to perform spin drying. At this time, due to the rotation of the substrate support 2, an airflow is generated as shown by the arrow in FIG. Further, the cleaning liquid adhering to the substrate 1 is:
The water is drained from the drain port 5 to the outside of the substrate 1.

【0031】外壁4aおよび側壁4bは、回転乾燥時の
基板1上に付着した洗浄液を受け止め、排水口5から流
すため、基板1の周囲を覆う機能を有する。気流は内壁
4bおよび外壁4aの各排気口6c、6b、6aから装
置4外へ排気される。側壁4bは、基板1の近傍周囲を
取り囲み、基板1の回転乾燥時の気流を効率的に排気口
6c、6b、6aを介して装置4の外に流す機能を有す
る。なお、本基板乾燥装置4では、基板支持台2の基板
支持面のほぼ水平延長面に開口する排気口6cを設けた
ことが最大の特徴である。なお、「ほぼ」というのは、
排気口6cは支持台2の基板支持面、すなわち、基板1
上面の厳密に水平延長面に開口することを意味せず、多
少ずれてもよいことを意味する。側壁4bの排気口6
a、6bは、円筒状の側壁4bの全周にわたって多数個
設けられている(図2(b)参照)。外壁4bの排気口
6aも同様に、円筒状の外壁4aの全周にわたって多数
個設けられている。
The outer wall 4a and the side wall 4b have a function of receiving the cleaning liquid adhering to the substrate 1 at the time of spin drying and flowing from the drain port 5, so as to cover the periphery of the substrate 1. The airflow is exhausted out of the device 4 from the exhaust ports 6c, 6b, 6a of the inner wall 4b and the outer wall 4a. The side wall 4b surrounds the vicinity of the substrate 1 and has a function of efficiently flowing an airflow when the substrate 1 is rotated and dried through the exhaust ports 6c, 6b, and 6a. The most characteristic feature of the present substrate drying apparatus 4 is that an exhaust port 6c is provided which opens in a substantially horizontal extension of the substrate support surface of the substrate support 2. "Almost" means
The exhaust port 6c is provided on the substrate support surface of the support base 2, that is, the substrate 1
It does not mean that the upper surface is strictly opened on the horizontal extension surface, but that it may be slightly shifted. Exhaust port 6 of side wall 4b
A large number of a and 6b are provided over the entire circumference of the cylindrical side wall 4b (see FIG. 2B). Similarly, a large number of exhaust ports 6a of the outer wall 4b are provided over the entire circumference of the cylindrical outer wall 4a.

【0032】本基板乾燥装置4において、基板1上に乾
燥ガスノズル7から乾燥ガス8を噴出させながら、基板
毎分回転数1000rpm以上の高速回転させて乾燥さ
せたところ、基板1上面の水平延長面に開口する排気口
6cを設けたことにより、気流が排気口6c、6b、6
aを介して良好に装置4外に排気され、図8に示した従
来装置において発生した側壁4bに沿って基板1上へ舞
い上がる気流(逆流成分:図8(c)の矢印aで示す)
が発生せず、ミストが基板1上に降りかかることが防止
され、基板1上に微小な水しみは発生しなかった。
In the present substrate drying apparatus 4, the substrate is dried at a high speed of 1000 rpm or more while the drying gas 8 is jetted from the drying gas nozzle 7 onto the substrate 1 and dried. Air flow is provided by the exhaust ports 6c, 6b, 6
8A, the air is well exhausted out of the apparatus 4 and rises on the substrate 1 along the side wall 4b generated in the conventional apparatus shown in FIG. 8 (backflow component: indicated by an arrow a in FIG. 8C).
No mist was generated, and the mist was prevented from falling on the substrate 1, and no fine water stain was generated on the substrate 1.

【0033】図7(a)は図1に示した本装置を使用し
た場合の乾燥時基板回転速度(毎分回転数rpm)に対
する水しみ起因の異物数(すなわち、欠陥数。個/基
板)の推移を示すグラフ、(b)は図8(c)に示した
従来装置を使用した場合の基板回転速度に対する水しみ
起因異物数の推移を示すグラフである。乾燥時の総排気
量は2.4m3/分、基板の寸法は650mm×830
mm、側壁4bの内径1100mmである。グラフ中の
□は洗浄乾燥前の欠陥数、○は洗浄乾燥後の欠陥数を示
す。なお、本装置による水しみ異物数の低減効果を明確
にするため、あえて排気量を低く抑えて比較実験を行っ
た。
FIG. 7A shows the number of foreign substances caused by water spots (ie, the number of defects; number of pieces / substrate) with respect to the substrate rotation speed during drying (rotation speed per minute) when the present apparatus shown in FIG. 1 is used. 8B is a graph showing the transition of the number of foreign matter caused by water seepage with respect to the rotation speed of the substrate when the conventional apparatus shown in FIG. 8C is used. The total displacement during drying is 2.4 m 3 / min, and the size of the substrate is 650 mm × 830.
mm, and the inner diameter of the side wall 4b is 1100 mm. In the graph, □ indicates the number of defects before cleaning and drying, and ○ indicates the number of defects after cleaning and drying. In addition, in order to clarify the effect of the present apparatus for reducing the number of water seeping foreign substances, a comparative experiment was performed with the exhaust volume intentionally kept low.

【0034】図7(b)に示したように、回転洗浄後、
従来装置を使用して回転乾燥を行うと、回転速度の増加
と共に水しみ起因の異物数が極端に増加する。これに対
して(a)に示したように、回転洗浄後、本装置4を使
用して回転乾燥を行うと、回転速度に依存する水しみ起
因の異物数の増加を抑制できる。
As shown in FIG. 7B, after the rotary cleaning,
When spin-drying is performed using a conventional apparatus, the number of foreign substances caused by water spots increases extremely as the rotation speed increases. On the other hand, as shown in (a), when the rotary cleaning is performed by using the present apparatus 4 after the rotary cleaning, the increase in the number of foreign substances due to the water spot depending on the rotation speed can be suppressed.

【0035】実施の形態2 図2(a)は本発明の実施の形態2の回転カップ式基板
乾燥装置の概略断面図、(b)は内側カップの概略外観
斜視図である。
Embodiment 2 FIG. 2A is a schematic sectional view of a rotating cup type substrate drying apparatus according to Embodiment 2 of the present invention, and FIG. 2B is a schematic external perspective view of an inner cup.

【0036】4aは装置外壁、4bは内側カップ(内側
容器)、9は内側カップ4bの回転機構、9aは駆動輪
である。直線矢印は気流を示す。
4a is an outer wall of the apparatus, 4b is an inner cup (inner container), 9 is a rotating mechanism of the inner cup 4b, and 9a is a driving wheel. Straight arrows indicate airflow.

【0037】本装置は、基板1の乾燥時に内側カップ4
bが回転機構9と駆動輪9aにより回転する構造になっ
ている。側壁4bの排気口6a、6bは、(b)に示す
ように、円筒状の側壁4bの全周にわたって多数個設け
られている。外壁4bの排気口6aも同様に、円筒状の
外壁4aの全周にわたって多数個設けられている。本装
置では、内側カップ4bの回転により、装置4外部へ向
かう気流が生成され((b)の直線矢印で示す)、基板
1に付着した水滴が効率的に除去され、内側カップ4b
に支持台2の基板支持面の水平延長面に開口する排気口
6cを設けたことと相まって、気流が排気口6c、6
b、6aを介して良好に装置4外に排気され、従来装置
で生じた基板1上へ舞い上がる気流(逆流成分)が発生
せず、ミストが基板1上に降りかかることによる微小な
水しみ発生防止効果が大きい。
The present apparatus uses the inner cup 4 when the substrate 1 is dried.
b is rotated by the rotation mechanism 9 and the drive wheels 9a. As shown in (b), a large number of exhaust ports 6a and 6b of the side wall 4b are provided over the entire circumference of the cylindrical side wall 4b. Similarly, a large number of exhaust ports 6a of the outer wall 4b are provided over the entire circumference of the cylindrical outer wall 4a. In the present apparatus, the rotation of the inner cup 4b generates an airflow toward the outside of the apparatus 4 (indicated by a straight arrow in (b)), so that water droplets attached to the substrate 1 are efficiently removed, and the inner cup 4b
Is provided with an exhaust port 6c which is opened on the horizontal extension surface of the substrate support surface of the support base 2, so that the airflow is reduced by the exhaust ports 6c, 6
Exhaust gas is satisfactorily exhausted to the outside of the device 4 through the b and 6a, and the airflow (backflow component) that rises on the substrate 1 generated by the conventional device is not generated, and the prevention of minute water seepage due to the mist falling on the substrate 1 is prevented. Great effect.

【0038】実施の形態3 図3〜図5は本発明の実施の形態3の基板洗浄乾燥一貫
装置を示す図であり、図3は基板搬入出工程時の概略断
面図、図4は基板洗浄工程時の概略断面図、図5は基板
乾燥工程時の概略断面図である。
Third Embodiment FIGS. 3 to 5 are views showing an integrated apparatus for cleaning and drying a substrate according to a third embodiment of the present invention. FIG. 3 is a schematic sectional view at the time of a substrate loading / unloading step, and FIG. FIG. 5 is a schematic sectional view at the time of a process, and FIG. 5 is a schematic sectional view at the time of a substrate drying process.

【0039】図3〜5において、40は基板洗浄乾燥装
置、4aは装置外壁、4bは内側カップ(第1カッ
プ)、4cは外側カップ(第2カップ)、6aは外壁4
aの排気口、6b、6cは内側カップ4bの排気口、6
dは外側カップ4cの排気口、10は外側カップ4cの
昇降機構である。図4において、11は洗浄液ノズル、
12は洗浄液である。矢印は気流を示す。
3 to 5, reference numeral 40 denotes a substrate cleaning / drying apparatus; 4a, an outer wall of the apparatus; 4b, an inner cup (first cup); 4c, an outer cup (second cup);
a, the outlets 6b, 6c are the outlets of the inner cup 4b, 6
d is an exhaust port of the outer cup 4c, and 10 is an elevating mechanism of the outer cup 4c. In FIG. 4, 11 is a cleaning liquid nozzle,
Reference numeral 12 denotes a cleaning liquid. Arrows indicate airflow.

【0040】図3に示す状態の装置4の基板支持台2上
に、図4に示すように、基板1が載置支持され、洗浄液
ノズル11が基板1上に移動され、基板支持台2を回転
機構3により高速で回転させながら洗浄液ノズル11か
ら基板1上に多量の純水や薬液等の洗浄液12を放水す
る。基板1洗浄後、図5に示すように、当該基板洗浄乾
燥一貫装置4を使用し、同様に基板持台2を高速で回転
させつつ、乾燥ガスノズル7から窒素ガス等の乾燥ガス
8を基板1上に噴出させ、基板1の乾燥を行う。
As shown in FIG. 4, the substrate 1 is placed and supported on the substrate support 2 of the apparatus 4 in the state shown in FIG. 3, the cleaning liquid nozzle 11 is moved on the substrate 1, and the substrate support 2 is moved. A large amount of cleaning liquid 12 such as pure water or chemical liquid is discharged from the cleaning liquid nozzle 11 onto the substrate 1 while being rotated at a high speed by the rotation mechanism 3. After cleaning the substrate 1, as shown in FIG. 5, while using the substrate cleaning and drying apparatus 4, the substrate holder 2 is rotated at a high speed, and a drying gas 8 such as nitrogen gas is supplied from the drying gas nozzle 7 to the substrate 1. The substrate 1 is blown up to dry the substrate 1.

【0041】基板1洗浄時は、内側カップ4bの多数の
排気口6b、6cは、図4に示すように、外側カップ4
cと重なり、該外側カップ4cの側壁によって遮蔽され
る。基板1乾燥時は、図5に示すように、昇降機構10
により外側カップ4cが下げられ、内側カップ4bの排
気口6c、6bの外側カップ4c側壁による遮蔽が解除
され、排気口6c、6bが開放状態となる。なお、図4
の基板1洗浄前、昇降機構10により外側カップ4cを
上げ、内側カップ4bの排気口6c、6bを、外側カッ
プ4c側壁によって遮蔽するが、必ずしも遮蔽しなくて
もよい。
At the time of cleaning the substrate 1, a large number of exhaust ports 6b and 6c of the inner cup 4b are connected to the outer cup 4 as shown in FIG.
c and is shielded by the side wall of the outer cup 4c. When the substrate 1 is dried, as shown in FIG.
As a result, the outer cup 4c is lowered, and the shielding of the exhaust ports 6c, 6b of the inner cup 4b by the side wall of the outer cup 4c is released, and the exhaust ports 6c, 6b are opened. FIG.
Before the washing of the substrate 1, the elevating mechanism 10 raises the outer cup 4c, and the exhaust ports 6c, 6b of the inner cup 4b are shielded by the side wall of the outer cup 4c.

【0042】本装置4においても、基板1乾燥時、基板
支持台2の基板支持面の水平延長面に開口する排気口6
cがあるので、気流が排気口6c、6b、6d、6aを
介して良好に装置4外に排気され、前述の基板1上へ舞
い上がる気流が発生せず、ミストが基板1上に降りかか
ることによる基板1上の微小な水しみは発生しなかっ
た。
In the present apparatus 4 also, when the substrate 1 is dried, the exhaust port 6 opened on the horizontal extension surface of the substrate support surface of the substrate support 2.
c, the air flow is satisfactorily exhausted to the outside of the device 4 through the exhaust ports 6c, 6b, 6d, 6a, and the air flow soaring above the substrate 1 is not generated, and the mist falls on the substrate 1. No fine water spots on the substrate 1 occurred.

【0043】以上本発明を実施の形態に基づいて具体的
に説明したが、本発明は前記実施の形態に限定されるも
のではなく、その要旨を逸脱しない範囲において種々変
更可能であることは勿論である。例えば、装置外壁4a
やカップ4b、4cの形状は必ずしも円筒状でなくても
よい。また、図1、図2、図5に示す装置4、40にお
いて、乾燥ガスノズル7は必ずしも設けなくてよく、基
板1の回転のみで基板1の乾燥を行ってもよい。また、
前記実施の形態3では、外側カップ4cを上げて内側カ
ップ4bの排気口6b、6cを遮蔽し、外側カップ4c
を下げて内側カップ4bの排気口6b、6cを開放した
が、外側カップ4cを下げて遮蔽し、上げて開放しても
よいことは言うまでもない。さらに、本発明は、アクテ
ィブ・マトリクス方式や単純マトリクス方式のLCD、
LSI等の半導体素子、光学素子、磁性体素子、磁気光
学素子、分子認識素子等を組み込んだ各種製品の製造工
程にも適用可能である。
Although the present invention has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and it is needless to say that various modifications can be made without departing from the gist of the present invention. It is. For example, the device outer wall 4a
The shapes of the cups 4b and 4c need not necessarily be cylindrical. Further, in the devices 4 and 40 shown in FIGS. 1, 2 and 5, the drying gas nozzle 7 is not necessarily provided, and the substrate 1 may be dried only by rotating the substrate 1. Also,
In the third embodiment, the outer cup 4c is raised to shield the exhaust ports 6b, 6c of the inner cup 4b, and the outer cup 4c
Is lowered to open the exhaust ports 6b and 6c of the inner cup 4b, but it goes without saying that the outer cup 4c may be lowered and shielded, and may be raised and opened. Further, the present invention relates to an active matrix type or simple matrix type LCD,
The present invention is also applicable to the manufacturing process of various products incorporating a semiconductor element such as an LSI, an optical element, a magnetic element, a magneto-optical element, a molecular recognition element, and the like.

【0044】[0044]

【発明の効果】以上説明したように、本発明によれば、
各種素子の製造工程における基板洗浄後の回転乾燥時の
ミスト付着による基板表面の汚染や水しみの発生を抑制
し、清浄な基板表面を作成でき、各種素子の製造歩留り
の向上に著しい効果を有する。
As described above, according to the present invention,
Suppresses the contamination of the substrate surface and the generation of water spots due to mist adhesion during spin drying after cleaning the substrate in the manufacturing process of various devices, making it possible to create a clean substrate surface, and has a remarkable effect on improving the manufacturing yield of various devices. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)は本発明の実施の形態1の基板乾燥装置
の概略外観斜視図、(b)は概略断面図である。
FIG. 1A is a schematic external perspective view of a substrate drying apparatus according to Embodiment 1 of the present invention, and FIG. 1B is a schematic sectional view.

【図2】(a)は本発明の実施の形態2の回転カップ式
基板乾燥装置の概略断面図、(b)は内側カップの概略
外観斜視図である。
FIG. 2A is a schematic sectional view of a rotating cup type substrate drying apparatus according to a second embodiment of the present invention, and FIG. 2B is a schematic external perspective view of an inner cup.

【図3】本発明の実施の形態3の基板搬入出工程時の基
板洗浄乾燥一貫装置の概略断面図である。
FIG. 3 is a schematic cross-sectional view of a substrate cleaning / drying apparatus during a substrate loading / unloading process according to a third embodiment of the present invention.

【図4】本発明の実施の形態3の基板洗浄工程時の概略
断面図である。
FIG. 4 is a schematic cross-sectional view during a substrate cleaning step according to a third embodiment of the present invention.

【図5】本発明の実施の形態3の基板乾燥工程時の概略
断面図である。
FIG. 5 is a schematic cross-sectional view during a substrate drying step according to a third embodiment of the present invention.

【図6】(a)は基板搬入出時の基板支持台の概略外観
斜視図、(b)は基板設置状態の基板支持台の概略外観
斜視図である。
FIG. 6A is a schematic external perspective view of the substrate support when the substrate is carried in and out, and FIG. 6B is a schematic external perspective view of the substrate support with the substrate installed.

【図7】(a)は図1に示した本装置を使用した場合の
基板回転速度に対する水しみ起因の異物数の推移を示す
グラフ、(b)は図8(c)に示した従来装置を使用し
た場合の基板乾燥時回転速度に対する水しみ異物数の推
移を示すグラフである。
7A is a graph showing a change in the number of foreign substances caused by water spots with respect to the substrate rotation speed when the present apparatus shown in FIG. 1 is used, and FIG. 7B is a graph showing the conventional apparatus shown in FIG. 6 is a graph showing a change in the number of foreign substances permeated with respect to a rotation speed at the time of substrate drying in the case where is used.

【図8】(a)は従来の基板乾燥装置の概略外観斜視
図、(b)は洗浄乾燥する基板が小さい場合の従来の基
板乾燥装置の概略断面図、(c)は基板が大きい場合の
従来の基板乾燥装置の概略断面図である。
FIG. 8A is a schematic external perspective view of a conventional substrate drying apparatus, FIG. 8B is a schematic sectional view of the conventional substrate drying apparatus when a substrate to be cleaned and dried is small, and FIG. It is a schematic sectional drawing of the conventional substrate drying device.

【符号の説明】[Explanation of symbols]

1…基板、2…基板支持台、2a…基板ステージ基底
部、2b…基板支持用ピン、2c…基板固定用ピン、3
…基板支持台回転機構、4…基板乾燥装置、4a…装置
外壁、4b…側壁(内側カップ)、4c…外側カップ、
4d…上部開口、4e…フィルタ、5…排水口、6a、
6b、6c、6d…排気口、7…乾燥ガスノズル、8…
乾燥ガス、9…内側カップ回転機構、9a…駆動輪、1
0…外側カップ昇降機構、11…洗浄液ノズル、12…
洗浄液、40…基板洗浄乾燥装置。
DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Substrate support base, 2a ... Substrate stage base part, 2b ... Substrate support pin, 2c ... Substrate fixing pin, 3
... substrate support table rotating mechanism, 4 ... substrate drying apparatus, 4a ... apparatus outer wall, 4b ... side wall (inner cup), 4c ... outer cup,
4d: upper opening, 4e: filter, 5: drain port, 6a,
6b, 6c, 6d: exhaust port, 7: dry gas nozzle, 8:
Dry gas, 9: inner cup rotating mechanism, 9a: drive wheel, 1
0 ... Outer cup elevating mechanism, 11 ... Cleaning liquid nozzle, 12 ...
Cleaning liquid, 40: substrate cleaning and drying device.

【手続補正書】[Procedure amendment]

【提出日】平成11年1月6日(1999.1.6)[Submission date] January 6, 1999 (1999.1.6)

【手続補正1】[Procedure amendment 1]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図2[Correction target item name] Figure 2

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図2】 FIG. 2

【手続補正2】[Procedure amendment 2]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図8[Correction target item name] Fig. 8

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図8】 FIG. 8

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 3B201 AA03 AB02 AB34 BB33 BB92 BB93 CB12 CC12 CC13 CD11 3L113 AA03 AB02 AB08 AB09 AC01 AC47 AC67 AC83 BA34  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3B201 AA03 AB02 AB34 BB33 BB92 BB93 CB12 CC12 CC13 CD11 3L113 AA03 AB02 AB08 AB09 AC01 AC47 AC67 AC83 BA34

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】乾燥する基板を載置支持する基板支持台
と、 前記基板支持台を回転させる回転機構と、 前記基板支持台の周囲を覆う容器と、 前記基板支持台の基板支持面のほぼ水平延長面に開口す
る排気口とを有することを特徴とする基板乾燥装置。
1. A substrate support for mounting and supporting a substrate to be dried, a rotation mechanism for rotating the substrate support, a container covering the periphery of the substrate support, and a substrate support surface of the substrate support. A substrate drying apparatus, comprising: an exhaust port that opens to a horizontal extension surface.
【請求項2】前記基板支持台上に乾燥ガス噴出ノズルを
有することを特徴とする請求項1記載の基板乾燥装置。
2. A substrate drying apparatus according to claim 1, further comprising a drying gas jet nozzle on said substrate support table.
【請求項3】前記容器が内壁と外壁とを有し、 前記内壁に前記排気口を複数個設け、 前記外壁にも排気口を複数個設けたことを特徴とする請
求項1記載の基板乾燥装置。
3. The substrate drying apparatus according to claim 1, wherein said container has an inner wall and an outer wall, said inner wall has a plurality of said exhaust ports, and said outer wall also has a plurality of exhaust ports. apparatus.
【請求項4】前記容器が内側容器と外側容器とを有し、 前記内側容器に前記排気口を複数個設け、 前記外壁にも排気口を複数個設け、 前記基板乾燥時に前記内側容器を回転させる回転機構を
有することを特徴とする請求項1記載の基板乾燥装置。
4. The container has an inner container and an outer container, the inner container has a plurality of exhaust ports, the outer wall has a plurality of exhaust ports, and the inner container rotates when the substrate is dried. The substrate drying apparatus according to claim 1, further comprising a rotating mechanism for rotating the substrate.
【請求項5】基板を載置支持する基板支持台と、 前記基板支持台を回転させる回転機構と、 前記基板支持台の周囲を覆う容器と、 洗浄液の排水口と、 前記基板洗浄時に遮蔽され、前記基板乾燥時に開放状態
となり、前記基板支持台の基板支持面のほぼ水平延長面
に開口する第1の排気口とを有することを特徴とする基
板洗浄乾燥装置。
5. A substrate support for mounting and supporting a substrate, a rotation mechanism for rotating the substrate support, a container covering the periphery of the substrate support, a drain for a cleaning liquid, and a shield for cleaning the substrate. And a first exhaust port which is opened when the substrate is dried and which is open to a substantially horizontal extension of the substrate support surface of the substrate support table.
【請求項6】前記容器が内側容器と外側容器とを有し、 一方の前記容器に前記第1の排気口を複数個設け、 他方の前記容器にも第2の排気口を複数個設け、 前記基板洗浄時に、前記第1の排気口が前記他方の容器
の壁により遮蔽され、前記基板乾燥時に、前記第1の排
気口が前記基板支持台のほぼ水平延長面に開口するよう
に前記両容器の少なくとも一方が上下方向に相対的に移
動し、開放状態となることを特徴とする請求項5記載の
基板洗浄乾燥装置。
6. The container has an inner container and an outer container, one of the containers has a plurality of the first exhaust ports, and the other of the containers has a plurality of the second exhaust ports, The first exhaust port is shielded by the wall of the other container during the substrate cleaning, and the first exhaust port is opened to a substantially horizontal extension surface of the substrate support table when the substrate is dried. The apparatus for cleaning and drying a substrate according to claim 5, wherein at least one of the containers is relatively moved in the up-down direction and is opened.
JP10265891A 1998-09-21 1998-09-21 Substrate dryer and substrate dryer/cleaner Pending JP2000097564A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10265891A JP2000097564A (en) 1998-09-21 1998-09-21 Substrate dryer and substrate dryer/cleaner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10265891A JP2000097564A (en) 1998-09-21 1998-09-21 Substrate dryer and substrate dryer/cleaner

Publications (1)

Publication Number Publication Date
JP2000097564A true JP2000097564A (en) 2000-04-04

Family

ID=17423544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10265891A Pending JP2000097564A (en) 1998-09-21 1998-09-21 Substrate dryer and substrate dryer/cleaner

Country Status (1)

Country Link
JP (1) JP2000097564A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002011420A (en) * 2000-06-28 2002-01-15 Sumitomo Precision Prod Co Ltd Device for treating substrate
JP2002282802A (en) * 2001-03-29 2002-10-02 Shinko Pantec Co Ltd Cleaning method
KR20030048764A (en) * 2001-12-13 2003-06-25 엘지전자 주식회사 A spin scrubber for the Flat Panel Display
KR100432053B1 (en) * 2001-07-05 2004-05-17 (주)케이.씨.텍 Drying Apparatus
JP2007220956A (en) * 2006-02-17 2007-08-30 Toshiba Corp Substrate processing method and substrate processing apparatus
WO2007140409A2 (en) * 2006-05-30 2007-12-06 Akrion Technologies, Inc. Apparatus and method for processing a hydrophobic surface of a substrate
CN100363796C (en) * 2002-01-14 2008-01-23 周星工程股份有限公司 Equipment with crystal seat assembly
JP2008034489A (en) * 2006-07-26 2008-02-14 Tokyo Electron Ltd Liquid processing apparatus
CN100449236C (en) * 2006-03-08 2009-01-07 昆山好烤克食品机械有限公司 Rotary horizontal flow and vertical flow transfer device of auger-type foodstuff transporter
JP2010040863A (en) * 2008-08-06 2010-02-18 Tokyo Electron Ltd Liquid processing apparatus
CN101947529A (en) * 2010-09-02 2011-01-19 东莞市飞尔液晶显示器有限公司 Liquid crystal display screen hollow cell cleaning process before crystal filling
WO2020039784A1 (en) * 2018-08-24 2020-02-27 株式会社Screenホールディングス Substrate processing device, process liquid, and substrate processing method

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002011420A (en) * 2000-06-28 2002-01-15 Sumitomo Precision Prod Co Ltd Device for treating substrate
JP2002282802A (en) * 2001-03-29 2002-10-02 Shinko Pantec Co Ltd Cleaning method
KR100432053B1 (en) * 2001-07-05 2004-05-17 (주)케이.씨.텍 Drying Apparatus
KR20030048764A (en) * 2001-12-13 2003-06-25 엘지전자 주식회사 A spin scrubber for the Flat Panel Display
CN100363796C (en) * 2002-01-14 2008-01-23 周星工程股份有限公司 Equipment with crystal seat assembly
JP2007220956A (en) * 2006-02-17 2007-08-30 Toshiba Corp Substrate processing method and substrate processing apparatus
CN100449236C (en) * 2006-03-08 2009-01-07 昆山好烤克食品机械有限公司 Rotary horizontal flow and vertical flow transfer device of auger-type foodstuff transporter
WO2007140409A2 (en) * 2006-05-30 2007-12-06 Akrion Technologies, Inc. Apparatus and method for processing a hydrophobic surface of a substrate
WO2007140409A3 (en) * 2006-05-30 2008-01-24 Akrion Technologies Inc Apparatus and method for processing a hydrophobic surface of a substrate
JP2008034489A (en) * 2006-07-26 2008-02-14 Tokyo Electron Ltd Liquid processing apparatus
JP2010040863A (en) * 2008-08-06 2010-02-18 Tokyo Electron Ltd Liquid processing apparatus
CN101947529A (en) * 2010-09-02 2011-01-19 东莞市飞尔液晶显示器有限公司 Liquid crystal display screen hollow cell cleaning process before crystal filling
WO2020039784A1 (en) * 2018-08-24 2020-02-27 株式会社Screenホールディングス Substrate processing device, process liquid, and substrate processing method
CN112514032A (en) * 2018-08-24 2021-03-16 株式会社斯库林集团 Substrate processing apparatus, processing liquid, and substrate processing method
KR20210043665A (en) * 2018-08-24 2021-04-21 가부시키가이샤 스크린 홀딩스 Substrate processing apparatus, processing liquid, and substrate processing method
KR102531469B1 (en) * 2018-08-24 2023-05-11 가부시키가이샤 스크린 홀딩스 Substrate processing device, processing liquid and substrate processing method

Similar Documents

Publication Publication Date Title
CN107026109B (en) Substrate cleaning apparatus and method, substrate processing apparatus and method
JP2000097564A (en) Substrate dryer and substrate dryer/cleaner
JP3414916B2 (en) Substrate processing apparatus and method
JPH0845832A (en) Treating method and treating apparatus
JP2009071235A (en) Substrate processing equipment
JP2008091717A (en) Substrate processing apparatus
JP3236742B2 (en) Coating device
JP2007214365A (en) Substrate processor
JP2017139442A (en) Substrate cleaning device, substrate processing apparatus, substrate cleaning method and substrate processing method
JPH06163500A (en) Method and apparatus for cleaning wafer
JP3876059B2 (en) Substrate processing apparatus and peripheral member cleaning method
JP3573445B2 (en) Developing device and cleaning device
JP2000114219A (en) Substrate-processing device
JP2003045838A (en) Substrate processing apparatus, and method of cleaning rotary plate and members surrounding the plate provided in the apparatus
JP2002359227A (en) Substrate treatment apparatus and method
JP2891951B2 (en) Photoresist developing device
JP7437154B2 (en) Substrate processing apparatus and substrate processing method
JP3035450B2 (en) Substrate cleaning method
JP2978806B2 (en) Substrate processing method
JP3321658B2 (en) Manufacturing method of liquid crystal display
JP2003303762A (en) Apparatus and method for treating substrate
JP3752136B2 (en) Development processing apparatus and development processing method
US20040226913A1 (en) Wet etching apparatus and method
JPH10242114A (en) Method and device for wet etching treatment
TWI223850B (en) Substrate cleaning apparatus and substrate cleaning method