JP2000147783A - Production of semiconductor device using forming method of fine pattern, and semiconductor device produced by the method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase the film thickness of a resist pattern already formed and to improve etching resistance by carrying out a process of forming a second resist pattern and a process of etching a base body with using the second resist pattern as a mask. SOLUTION: A first resist pattern 1a formed on a semiconductor substrate 7 and a second resist 2 formed on the first resist pattern are heat treated. By this heat treatment, crosslinking reaction is caused on the interface between the upper face of the resist pattern 1a and the second resist 2. The crosslinking layer 4 which causes the crosslinking reaction by mixing baking is formed in the second resist 2 to break the first resist pattern 1a. Then a water-soluble org. solvent or developer is used to develop and remove the second resist 2 not crosslinked so as to form a second resist pattern 2a. Then the obtd. second resist pattern 2a is used as a mask to etch the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a material for a fine separation resist pattern for increasing the thickness of a resist pattern when forming a resist pattern in a semiconductor process, and a method for forming a fine separation pattern using the same. The present invention relates to a forming method, a method of manufacturing a semiconductor device using the fine separation pattern, and a semiconductor device manufactured by the method.

[0002]

2. Description of the Related Art As semiconductor devices become more highly integrated, wiring and isolation widths required for manufacturing processes have become extremely fine. Generally, the formation of a fine pattern
It is performed by a method in which a resist pattern is formed by a photolithography technique, and various base materials are etched using the formed resist pattern as a mask.

[0003] Therefore, in forming a fine pattern, a photolithography technique is very important. Photolithography technology includes resist coating, mask alignment,
It consists of exposure and development.
There is a limit due to the limitation of the exposure wavelength.

Further, with the shortening of the exposure wavelength, the resist material used has a tendency to decrease in etching resistance and the resist film thickness tends to be reduced in view of forming a fine pattern. Restrictions also have limitations.

Therefore, as a technique for improving the etching resistance of the resist, a method of modifying the resist surface by performing a treatment such as silylation of the resist surface has been studied (M. Sebald, et al., SPIE, Vol. .1262,528 (199
0)).

However, in the silylation method, (1) it is difficult to remove the resist after etching, particles are generated, (2) the pattern shape is poor and the etching selectivity is poor, and (3) if the underlying layer is an oxide film, , Not applicable.

[0007]

As described above,
In conventional photolithography technology by exposure,
Since there is a limit in increasing the thickness of the resist pattern due to restrictions on the formation of a fine pattern, it has been difficult to ensure etching resistance. The present invention is to realize an increase in the thickness of an already formed resist pattern in order to improve the etching resistance in the miniaturization of the separation pattern and the hole pattern. And a technique for thickening the film. It is another object of the present invention to provide a method of manufacturing a semiconductor device using the fine separation resist pattern forming technique, and to provide a semiconductor device manufactured by this manufacturing method.

[0008]

According to the method of forming a fine pattern of the present invention, after forming a resist pattern, the thickness of the resist pattern is increased to thereby increase the thickness of the resist pattern without impairing the resolution of the resist pattern. By doing so, the etching resistance is improved.

The method of manufacturing a semiconductor device according to the present invention includes a step of forming a first resist pattern on a substrate, a step of forming a second resist on the first resist pattern, and a step of forming the second resist on the first resist pattern. Forming a cross-linking layer at a portion of the resist in contact with the upper surface of the first resist pattern, removing the non-cross-linking portion of the second resist to form the second resist pattern, Etching the base material using the resist pattern as a mask.

In the method of manufacturing a semiconductor device according to the present invention, the first resist is formed of a resist capable of generating an acid or contains an acid, and the second resist is formed by the presence of an acid. A component causing a cross-linking reaction, wherein a cross-linking layer is formed at a portion of the second resist in contact with the upper surface of the first resist by supplying an acid from the first resist pattern. , And further characterized by being manufactured using the same.

In the method of manufacturing a semiconductor device, a non-crosslinking third resist is formed so as to fill a cut portion of the first resist pattern as a method of forming the second resist. The second feature is that a second resist is formed, and further, this is used.

Further, in the method of manufacturing a semiconductor device according to the present invention, the second resist and the third resist are soluble in water or an aqueous solution. It is characterized by.

In the method of manufacturing a semiconductor device according to the present invention, the second resist is insoluble in water and the third resist is soluble in water or an aqueous solution. It is characterized by using this.

A semiconductor device according to the present invention is manufactured by the above-described method for manufacturing a semiconductor device.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment FIG. 1 shows an example of a mask pattern for forming a finely separated resist pattern which is the object of the present invention.
1 to 4 are process flow charts for explaining a method for forming a finely divided resist pattern according to Embodiment 1 of the present invention. Here, a positive resist is used.

First, a method for forming a finely divided resist pattern according to the present embodiment and a method for manufacturing a semiconductor device using the same will be described with reference to FIGS.

As shown in FIG. 3, a semiconductor substrate (semiconductor wafer) 7 is coated with a first resist 1 having a mechanism for generating an acid therein by an appropriate heat treatment (for example, a thickness of 0.5 to 0.5 mm). About 0.7 μm).

The first resist is applied on the semiconductor substrate 7 by spin coating or the like, and then prebaked (70
(A heat treatment at about 110 ° C. for about 1 minute) to evaporate the solvent in the first resist 1.

Next, in order to form a first resist pattern, g-line, i-line, Deep-UV, KrF excimer, ArF excimer, EB (electron beam), X-ray
For example, using a light source corresponding to the sensitivity wavelength of the applied first resist 1, projection exposure is performed using a mask including a pattern as shown in FIG.

The material of the first resist used here may be a resist using a mechanism that generates an acidic component inside the resist by an appropriate heat treatment, and may be either a positive type or a negative type resist.

For example, as the first resist, a positive resist composed of a novolak resin, a naphthoquinonediazide-based photosensitive agent, or the like can be used.

Further, as the first resist, a chemically amplified resist using a mechanism for generating an acid can be used. If the resist material is a resist material using a reaction system that generates an acid by heating, other resists can be used. It may be something. Examples of the chemically amplified resist include, for example, a positive resist composed of a polyhydroxystyrene resin and an onium salt-based acid generator.

After the exposure of the first resist 1, PEB (post-exposure baking) is performed as necessary (for example, PEB).
(Temperature: 50 to 130 ° C.) to improve the resolution of the resist 1.

Next, about 0.05 to 3.0 wt% of TMAH (tetramethyl ammonium hydroxide) or the like.
% Using an aqueous alkaline solution. FIG. 2 shows a first resist pattern formed using a positive chemically amplified resist.

After the development processing, post-development baking may be performed as required (for example, the baking temperature is 60 to 120 ° C. for about 60 seconds). Since this heat treatment affects the subsequent mixing reaction, it is desirable to set an appropriate temperature in accordance with the first resist or the second resist material to be used.

Except for using the first resist 1 which generates an acid, the process is the same as the formation of a resist pattern by a general resist process.

Next, as shown in FIG. 3, on the semiconductor substrate 7, a second material dissolved in a solvent which does not dissolve the resist pattern shown in FIG. A resist 2 is applied.

The method of applying the second resist 2 is not particularly limited as long as it can be applied uniformly on the first resist pattern 1a, and is applied by spraying, spin coating, or in the second resist solution. Immersion (dipping)
It is also possible to apply by doing.

Next, after the application of the second resist 2, the second resist 2 is pre-baked as required (for example, at 85 ° C. for about 60 seconds) to form the second resist layer 2.

Next, as shown in FIG. 3, the first resist pattern 1a formed on the semiconductor substrate 7 and the second resist 2 formed thereon are subjected to a heat treatment. The heating temperature is, for example, about 85 ° C. to 140 ° C., which is a temperature range in which the resist pattern 1a is not deformed. The heat treatment promotes the diffusion of the acid from the first resist pattern 1a and supplies the acid into the second resist 2 to form the resist pattern 1a.
at the interface with the second resist 2 in contact with the upper surface of
Initiate a crosslinking reaction. The heat treatment temperature / time in this case is, for example, 85 ° C. to 140 ° C./60 to 120 seconds,
Optimal conditions may be set depending on the type of resist material used and the required thickness of the reaction layer.

A crosslinked layer 4 having undergone a crosslinking reaction by the mixing bake is formed in the second resist 2 so as to cover the first resist pattern 1a.

Next, as shown in FIG. 3, water or
Using an aqueous solution of a water-soluble organic solvent or a developing solution of an aqueous alkali solution such as TMAH, the second resist 2 that has not been crosslinked is peeled off by development to form a second resist pattern 2a. Through the above processing, it is possible to obtain a resist pattern in which the hole inner diameter or the separation width of the line pattern is reduced or the area of the isolated pattern is enlarged.

As described above, in the method of forming a fine resist pattern described with reference to FIG.
Before or after forming the second resist layer 2 on the first resist pattern 1 by a suitable heat treatment.
The method of generating an acid in a and diffusing it into the second resist 2 has been described.

Next, a method for generating an acid by exposure instead of or prior to the heat treatment will be described.

FIG. 4 is a process flow chart for explaining a method of forming a finely separated resist pattern in this case.

After forming the first resist layer 1a shown in FIG. 4, as shown in FIG.
The entire surface of the semiconductor substrate is exposed with an F excimer laser to generate an acid in the first resist pattern 1a, thereby forming a crosslinked layer 4 near the interface of the second resist 2 in contact with the first resist pattern 1a. .

The second resist layer 2 shown in FIG.
Is formed, the entire surface of the semiconductor substrate is exposed with a g-line, an i-line, or a KrF excimer laser to generate an acid in the first resist pattern 1a, thereby forming a second resist in contact with the first resist pattern 1a. It is also possible to form a cross-linked layer 4 near the interface of No. 2.

The exposure may be performed before or after the formation of the second resist, and is not particularly limited, and may be selected as needed.

As a light source used for the exposure at this time, an Hg lamp, a KrF excimer, an ArF excimer, or the like can be used according to the photosensitive wavelength of the first resist 1, and an acid can be generated by the exposure. There is no particular limitation, and the exposure may be performed using a light source and an exposure amount according to the photosensitive wavelength of the first resist 1 used.

Next, if necessary, the semiconductor substrate 7 is subjected to a heat treatment (for example, mixing and baking at 60 to 130 ° C.). Thereby, the acid from the first resist pattern 1a is diffused and supplied into the second resist 2, and the second resist 2
At the interface between the first resist pattern 1a and the first resist pattern 1a. Mixing bake temperature in this case /
The time is 60 to 130 ° C./60 to 120 seconds, and the optimum conditions may be set according to the type of the resist material used and the required thickness of the reaction layer.

By this mixing baking, a crosslinked layer 4 having undergone a crosslinking reaction is formed in the second resist 2 so as to cover the first resist pattern 1a.

Next, the step of FIG. 4E is the same as that of FIG. 3D. Through the above-described processing, it is possible to obtain a resist pattern having an increased thickness without increasing the resolution of the resist pattern.

Here, the material used for the second resist 2 will be described.

As the second resist, a crosslinkable water-soluble resin alone or a mixture of two or more thereof can be used. Further, a single water-soluble crosslinking agent or a mixture of two or more thereof is used. further,
A mixture of these water-soluble resins and a water-soluble crosslinking agent is used.

When a mixture is used as the second resist, the material composition thereof is not particularly limited as long as the optimum composition is set according to the applied first resist material or the set reaction conditions. Not something.

Specific examples of the water-soluble resin composition used for the second resist include polyacrylic acid, polyvinyl acetal, polyvinyl pyrrolidone,
Polyvinyl alcohol, polyethyleneimine, polyethylene oxide, styrene-maleic acid copolymer, polyvinylamine resin, polyallylamine, oxazoline group-containing water-soluble resin and the like can be particularly effectively applied,
When a cross-linking reaction occurs in the presence of an acidic component or when no cross-linking reaction occurs, there is no particular limitation as long as mixing with a water-soluble cross-linking agent is possible. A water-soluble melamine resin, a water-soluble urea resin, an alkyd resin, a sulfonamide resin and the like are also applicable. It is effective to use these alone or as a mixture.

[0047]

Embedded image

One of these water-soluble resins or two
It may be used as a mixture of more than two kinds, and can be appropriately adjusted depending on the reaction amount, reaction conditions, and the like with the underlying first resist 1.

These water-soluble resins may be used in the form of a salt such as a hydrochloride for the purpose of improving the solubility in water.

Next, specific examples of the water-soluble crosslinking agent that can be used in the second resist include urea derivatives, alkoxyethylene urea, N-alkoxyethylene urea, ethylene urea, and ethylene urea as shown below. Urea crosslinking agents such as carboxylic acids, melamine, melamine crosslinking agents such as alkoxymethylene melamine, benzoguanamine,
An amino-based cross-linking agent such as glycoluril is applicable. However, the crosslinking agent is not particularly limited to an amino-based crosslinking agent, and is not particularly limited as long as it is a water-soluble crosslinking agent that causes crosslinking by an acid.

[0051]

Embedded image

Further, as a specific water-soluble resist material used for the second resist, a water-soluble resin alone or a mixture as described above and a water-soluble crosslinker alone or a mixture as described above may be used. It is also effective to use a mixture of these.

For example, specifically, as the second resist, a polyvinyl acetal resin is used as the water-soluble resin composition, and methoxymethylol melamine, ethylene urea, or the like is used as a water-soluble cross-linking agent. Is mentioned. In this case, since the water solubility is high, the storage stability of the mixed solution is excellent.

The material applied to the second resist is water-soluble or soluble in a water-soluble solvent that does not dissolve the first resist pattern, and causes a crosslinking reaction in the presence of an acid component. It is not particularly limited as long as it is a material.

Next, in the present invention, controlling the cross-linking reaction between the first resist 1 and the second resist 2 and controlling the thickness of the cross-linked layer 4 formed on the first resist pattern 1a. is important. The control of the crosslinking reaction depends on the reactivity between the first resist 1 and the second resist 2 to be applied,
It is desirable to optimize according to the shape of the resist pattern 1a, the required thickness of the crosslinking reaction layer 4, and the like.

The control of the cross-linking reaction between the first resist and the second resist can be controlled by adjusting the process conditions or by controlling the second resist.
There is a method of adjusting the composition of the resist material.

As a process control method of the cross-linking reaction, there are methods such as (1) adjusting the exposure amount to the first resist pattern 1a, (2) adjusting MB (mixing bake) temperature and processing time. It is valid. In particular, it is possible to control the thickness of the cross-linked layer by adjusting the time for the cross-linking by heating (MB time), and it can be said that this is a technique with very high reaction controllability.

From the viewpoint of the material composition used for the second resist, (3) by mixing two or more appropriate water-soluble resins and adjusting the mixing ratio thereof, the reaction with the first resist can be improved. It is effective to control the amount of the first resist by mixing the water-soluble resin with an appropriate water-soluble crosslinking agent and adjusting the mixing ratio thereof. .

However, the control of these cross-linking reactions is not determined centrally, but (1) the reactivity between the second resist material and the applied first resist material,
Considering various conditions such as (2) the shape and thickness of the first resist pattern, (3) the required thickness of the crosslinked layer, (4) usable exposure conditions or MB conditions, and (5) application conditions. You need to decide.

In particular, it has been found that the reactivity between the first resist and the second resist is affected by the composition of the first resist material. Therefore, when the present invention is actually applied, It is desirable to optimize the second resist composition in consideration of the above factors.

Accordingly, the type of water-soluble material used for the second resist and the composition ratio thereof are not particularly limited, and are optimized according to the type of material used, heat treatment conditions and the like.

Next, the solvent used for the second resist will be described.

It is necessary that the solvent used for the second resist not dissolve the pattern of the first resist and sufficiently dissolve the water-soluble material. Not something.

For example, as a solvent for the second resist,
Water (pure water), water and an alcoholic solvent such as IPA (isopropyl alcohol), or a water-soluble organic solvent such as N-methylpyrrolidone alone or a mixed solution may be used.

The solvent to be mixed with water is not particularly limited as long as it is water-soluble. For example, alcohols such as ethanol, methanol and isopropyl alcohol, γ-butyrolactone, acetone and the like can be used. It is possible to mix them in a range that does not dissolve the first resist pattern in accordance with the solubility of the material used for the second resist.

Second Embodiment FIG. 5 is a process flow chart for explaining a method for forming a finely divided resist pattern according to a second embodiment of the present invention. Referring to FIG. 5, a method for forming a finely divided resist pattern according to the second embodiment and a method for manufacturing a semiconductor device using the same will be described.

First, as shown in FIG. 5, a first resist pattern 11a is formed on a semiconductor substrate 7. As the forming method, the method described in Embodiment Mode 1 is effectively used, and the detailed description is omitted to avoid duplication.

Next, a resist 3 that does not dissolve the pattern of the resist 11a and does not cause a reaction due to the presence of an acid or the like, that is, does not interact with the resist pattern 11a is formed.

The resist 3 is formed so as to fill the separation space of the resist pattern 11a.
If the upper surface of the resist pattern 11a is not covered, or if it is covered, the acid component diffused from the resist pattern 11a has a film thickness enough to sufficiently diffuse into the resist 2 to be formed thereafter. I do.

The material of the resist 3 is PVA (polyvinyl alcohol) or PVA as a water-soluble material.
P (polyvinylpyrrolidone) and the like can be applied. The material is not limited to these, and the resist 11a
The material is not particularly limited as long as it does not interact with the material.

Next, a resist 2 is formed. Resist 2
Since the forming method and the material are described in the first embodiment, the details are omitted here.

Further, as shown in FIG. 5E, the film thickness of the resist pattern can be increased without lowering the resolution of the resist 11a by washing and removing the non-crosslinked portion by rinsing. Thereby, a resist pattern with improved etching resistance can be obtained.

[0073]

Next, examples related to the first and second embodiments will be described. One example may relate to one or more embodiments, and will be described together.

Production Example 1 A resist pattern was formed using a chemically amplified excimer resist manufactured by Tokyo Ohka Kogyo Co., Ltd. as a first resist.

First, the resist was dropped on a Si wafer and formed into a film by spin coating. Next, prebaking was performed at 90 ° C./90 seconds, and the solvent in the resist was dried.
Subsequently, exposure was performed using a mask as shown in FIG. 1 using a KrF excimer reduction projection exposure apparatus.

Next, PEB treatment was performed at 100 ° C./90 seconds, and subsequently, an alkaline developer (manufactured by Tokyo Ohka Kogyo Co., Ltd.)
NMD-W) was used to obtain a resist pattern having a thickness of 0.71 μm as shown in FIG.

Production Example 2 A 1 L volumetric flask was used as a second resist material.
Sekisui Chemical Co., Ltd. polyvinyl acetal resin Esrec KW3, KW1, polyvinyl alcohol resin, polyvinylpyrrolidone, oxazoline-containing water-soluble resin (Nippon Shokubai Co., Ltd., Epocros WS500), styrene-maleic anhydride copolymer (ARCOchemica)
l, SMA1000, 1440H)
Was mixed with 90 g of pure water, and stirred and mixed at room temperature for 3 hours to obtain respective 10 wt% aqueous solutions.

Production Example 3 Using a 1 L volumetric flask as a second resist material, methoxymethylolmelamine (Cymel 370, manufactured by Mitsui Sinamide Co., Ltd.), (N-methoxymethyl)
10 g of each of methoxyethylene urea, (N-methoxymethyl) hydroxyethylene urea and N-methoxymethyl urea and 90 g of pure water were stirred and mixed at room temperature for 6 hours to obtain respective 10 wt% aqueous solutions.

Production Example 4 As the second resist material, one of KW3 obtained in Production Example 2 was used.
Each of 60 g, 70 g, and 80 g of a 0 wt% aqueous solution,
40 g, 30 g, and 20 g of a 10 wt% aqueous solution of (N-methoxymethyl) hydroxyethylene urea obtained in Production Example 3
Were mixed to obtain a mixed solution of a water-soluble resin and a water-soluble crosslinking agent.

Production Example 5 A 1 L volumetric flask was used as a third resist material.
90 g of pure water was mixed with 10 g of each of the polyvinyl alcohol resin and polyvinyl pyrrolidone, and the mixture was stirred and mixed at room temperature for 3 hours to obtain a 10 wt% aqueous solution of each.

Production Example 6 As a second resist material, 80 g of a 10 wt% aqueous solution of polyvinyl alcohol obtained in Production Example 2 and 20 g of a 10 wt% aqueous solution of methoxymethylolmelamine obtained in Production Example 3
Was stirred and mixed at room temperature for 3 hours to obtain a mixed solution of a water-soluble resin and a water-soluble crosslinking agent.

Examples 1 to 4 and Comparative Example 1 S on which the first resist pattern obtained in Production Example 1 was formed
The second resist material obtained in Production Example 4 was dropped on the i-wafer, spin-coated, and then prebaked at 85 ° C./70 seconds to form a second resist film.

Next, 100 ° C., 110 ° C., 120 ° C./6
The heat treatment was performed under each condition of 0 seconds, and the crosslinking reaction was allowed to proceed. Next, development is performed using pure water, the uncrosslinked layer is developed and peeled off, and then post-baking is performed at 110 ° C./60 seconds to form a second resist crosslinked layer on the first resist pattern. As shown in FIG. 8, a second resist pattern was formed. In FIG. 8, the thickness of the second resist pattern was measured by changing the mixture ratio of the water-soluble resin and the size of the resist pattern after forming the crosslinked layer. Table 1 shows the results.

[0084]

[Table 1]

In this case, the thickness of the cross-linked layer formed on the first resist can be controlled by changing the mixing amount of the water-soluble resin and the water-soluble cross-linking agent and by changing the heat treatment temperature. It turns out that it is possible.

Examples 5 to 7 The S on which the first resist pattern obtained in Production Example 1 was formed
As shown in FIG. 9, the entire surface of the i-wafer was exposed using a KrF excimer exposure apparatus at a dose of 0, ² , and 5 mJ / cm ² . Next, the KW3 obtained in Production Example 4
And (N-methoxymethyl) hydroxyethylene urea 1
0 wt% mixed solution is dropped as a second resist material,
After spin coating, prebaking was performed at 85 ° C./70 seconds to form a second resist film.

Further, a heat treatment was carried out at 120 ° C./60 seconds to advance a crosslinking reaction. Next, development is performed using pure water, the uncrosslinked layer is developed and peeled off, and then post-baking is performed at 110 ° C./60 seconds, as shown in FIG.
A second cross-linked resist layer was formed on the upper surface of the first resist pattern. Further, the thickness of the resist pattern after the formation of the crosslinked layer was measured. Table 2 shows the results. Thereby, the first resist film thickness of 0.71 μm before forming the crosslinked layer
In each case, the film thickness was increased, and it was found that the film thickness of the crosslinked layer increased with an increase in the amount of exposure light, and the film thickness of the entire resist pattern was increased.

[0088]

[Table 2]

Examples 8 to 10 The S on which the first resist pattern obtained in Production Example 1 was formed
As shown in FIG. 10, the aqueous solution of polyvinyl alcohol obtained in Production Example 5 was dropped on the i-wafer as a third resist material, spin-coated, and prebaked at 85 ° C./70 seconds to form a third resist. A film was formed. Next, a 20 wt% mixed solution of polyvinyl alcohol and methoxymethylol melamine obtained in Production Example 6 was dropped as a second resist material, spin-coated, and prebaked at 85 ° C./70 seconds to form a second resist film. Was formed.

Further, at 110 ° C./60 seconds, at 115 ° C./6
Heat treatment was performed at 0 ° C. and 120 ° C./60 seconds to allow the crosslinking reaction to proceed. Next, development is performed using pure water, the uncrosslinked layer is developed and peeled off, and then a bake treatment is performed at 110 ° C./60 seconds. 2 was formed. Further, the thickness of the resist pattern after the formation of the crosslinked layer was measured.
Table 3 shows the results.

[0091]

[Table 3]

[0092]

As described above in detail, according to the present invention, a finely divided resist capable of forming a pattern exceeding the etching resistance limit of the resist film thickness used in miniaturizing a resist pattern. A material for forming a pattern,
A fine pattern forming method using the same can be obtained.

According to the first, second, third and fourth aspects of the present invention, the thickness of the fine resist pattern can be increased without lowering the resolution of the resist. Accordingly, it is possible to reduce the thickness of the resist film without sacrificing etching resistance. Further, using the fine separation resist pattern thus formed as a mask, finely separated spaces or holes can be formed on the semiconductor substrate.

According to the fifth aspect of the invention, a semiconductor device having finely separated spaces or holes can be obtained by the manufacturing method according to the first, second, third and fourth aspects.

[Brief description of the drawings]

FIG. 1 is a diagram of a mask pattern for describing a resist pattern forming method according to a first embodiment of the present invention;

FIG. 2 is a view of a resist pattern for explaining a method of forming a resist pattern according to the first embodiment of the present invention;

FIG. 3 is a process flow chart for describing a method of forming a resist pattern according to the first embodiment of the present invention.

FIG. 4 is a process flow chart for describing a method of forming a resist pattern according to the first embodiment of the present invention.

FIG. 5 is a process flow chart for describing a method of forming a resist pattern according to a second embodiment of the present invention.

FIG. 6 is a diagram of a first mask pattern in Examples 1 to 10 of the present invention.

FIG. 7 is a diagram of a first resist pattern in Examples 1 to 10 of the present invention.

FIG. 8 is a process flow chart for describing a method of forming a resist pattern in Examples 1 to 4 of the present invention.

FIG. 9 is a process flow chart for explaining a resist pattern forming method in Examples 5 to 7 of the present invention.

FIG. 10 is a process flow chart for describing a method of forming a resist pattern in Examples 8 to 10 of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 1st resist, 1a, 11a 1st resist pattern, 2 2nd resist, 2a 2nd resist pattern, 3rd resist which does not interact with resist pattern 11a, 4 bridge | crosslinking layer, 5 Cross-linked layer,
6 upper layer agent, 7 semiconductor substrate (semiconductor wafer), 8
Mask pattern.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Naoki Yasuda, 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsui Electric Co., Ltd. (72) Hiroshi Adachi 2-3-2 Marunouchi, Chiyoda-ku, Tokyo F term (reference) in Mitsubishi Electric Corporation 2H025 AA02 AA09 AB16 AC04 AC05 AC06 AD03 BE07 BE10 EA05 FA09 FA17 FA29 2H096 AA25 BA11 CA14 EA03 EA06 EA07 EA12 FA01 GA09 KA03 KA12 KA13 KA14 KA16

Claims (5)

[Claims] A step of forming a first resist pattern on a base material; a step of forming a second resist on the first resist pattern; and a step of forming the first resist pattern on the second resist. A step of forming a crosslinked layer in a portion in contact with the upper surface, a step of removing a non-crosslinked portion of the second resist to form a second resist pattern, and the step of forming the base material using the second resist pattern as a mask And a step of etching the semiconductor device. 2. The method according to claim 1, wherein the first resist is composed of a resist that can generate an acid or contains an acid, and the second resist contains a component that causes a cross-linking reaction due to the presence of an acid. 2. The method of manufacturing a semiconductor device according to claim 1, wherein a cross-linking layer is formed at a portion of the second resist in contact with an upper surface of the first resist by supplying an acid from the first resist pattern. 3. The method of forming the second resist,
2. The semiconductor device according to claim 1, wherein a non-crosslinkable third resist is formed so as to fill a cut portion of the first resist pattern, and then a second resist is formed. Production method. 4. The method according to claim 1, wherein the second resist and the third resist are soluble in water or an aqueous solution. 5. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 1, 2, 3, or 4.