JP2006165328A - Method for forming resist pattern - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern in which a dense pattern is formed on a lower layer and a pattern is formed on an upper layer, and a mixing can be restricted. <P>SOLUTION: The method for forming the resist pattern contains the following steps (i) and (ii). In the step (i) a first resist layer is formed by use of a first negative type resist composition on a substrate for a selective exposure, and in the step (ii) a second resist layer is formed on the first resist layer by use of a second negative type resist composition or a positive type resist composition. After the selective exposure, the first resist layer and the second resist layer are concurrently developed to expose a part of an unexposed part of the first resist layer. As the second negative resist composition or positive resist composition, one which is dissolved in an organic solvent is used as the solvent which does not dissolve the first resist layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a resist pattern forming method.

In recent years, in the manufacture of semiconductor elements and liquid crystal display elements, pattern miniaturization has been rapidly progressing due to advances in lithography technology. As a technique for miniaturization, the wavelength of an exposure light source is generally shortened. Specifically, conventionally, ultraviolet rays typified by g-line and i-line have been used, but at present, mass production of semiconductor elements using a KrF excimer laser or an ArF excimer laser has started. Further, F ₂ excimer laser having a shorter wavelength than these excimer lasers, electron beams, also consider such extreme ultraviolet radiation and X-rays have been made.
In addition, as one of the resist materials that satisfy the high resolution conditions that can reproduce patterns with fine dimensions, it contains a base resin whose alkali solubility changes due to the action of acid and an acid generator that generates acid upon exposure. A chemically amplified resist composition is known. The chemically amplified resist composition includes a negative type containing an alkali-soluble resin, an acid generator and a crosslinking agent, and a positive type containing a resin whose alkali solubility is increased by the action of an acid and an acid generator. .

  For example, as a resist base resin used in ArF excimer laser lithography or the like, a resin (acrylic resin) having a structural unit derived from (meth) acrylic acid is mainly used because of excellent transparency near 193 nm. (Patent Document 1 etc.).

And when forming a resist pattern using such a chemically amplified resist composition, for example, a step of forming a resist layer on a substrate using a resist composition, a step of selectively exposing the resist layer, A step of post-exposure heat treatment (PEB treatment) and a step of developing the resist layer to form a resist pattern are performed.
In forming a resist pattern, for example, when forming a pattern such as a line or hole on a single substrate, a dense pattern with a narrow interval between adjacent patterns and a sparse pattern with a wide interval between adjacent patterns May form.

In recent years, with the increasing complexity and density of devices, it is required to form such different patterns with high accuracy on a single substrate.
However, the conventional resist pattern formation has a problem that the depth of focus (DOF) when forming a sparse pattern tends to be narrower than the DOF when forming a dense pattern.

Therefore, in Patent Document 2, for example, a second resist layer (upper layer) is stacked on a first resist layer (lower layer) on which a dense pattern is formed, and the dense pattern is embedded therein, and then the upper layer includes the above-described dense pattern. A technique is disclosed in which a pattern different from the dense pattern is formed, a part of the dense pattern in the lower layer is exposed, and the remaining dense pattern is embedded. That is, the upper layer pattern is formed so as to embed a part of the pattern formed in the lower layer.
For example, the upper layer pattern is formed in a larger size than the pattern formed in the lower layer. More specifically, for example, when hole patterns are formed in the upper and lower layers, a pattern larger than the diameter of holes formed in the dense pattern in the lower layer is formed in the upper layer, and the hole patterns in the upper and lower layers are connected. To form. Then, in the range where the upper hole pattern is formed, the lower dense pattern can be exposed. And in the range which does not remove an upper layer, it will be in the state where a part of dense pattern of the lower layer was embedded.
In this way, a sparse pattern composed of a pattern formed in the lower layer and a pattern formed in the upper layer continuous with the pattern is formed on a part of the substrate. That is, since this pattern uses a dense pattern formed in the lower layer, a lower layer pattern in contact with the substrate is formed in a desired size, and a sparse pattern satisfying the DOF characteristics can be obtained.
In this way, a resist pattern in which a dense pattern and a sparse pattern are mixed can be formed on one substrate.
As a result, problems due to variations in the DOF characteristics between the dense pattern and the sparse pattern can be suppressed.
JP 2003-167347 A US Publication No. US2003-0104319A1

  However, in the resist pattern forming method in which a dense pattern is formed in the lower layer and a pattern different from the lower layer is formed in the upper layer, there is a problem that mixing occurs at the interface between the upper and lower layers. Mixing refers to a phenomenon in which both resist layers are dissolved.

  The present invention has been made in view of the above circumstances, and provides a resist pattern forming method capable of suppressing mixing in a resist pattern forming method in which a dense pattern is formed in a lower layer and a pattern different from the lower layer is formed in an upper layer. This is the issue.

In order to achieve the above object, the present invention employs the following configuration.
The first mode is selected in order to form a dense pattern by forming a first resist layer on the substrate using the first negative resist composition in steps (i) to (ii) below (i) (Ii) forming a second resist layer on the first resist layer using a second negative resist composition or a positive resist composition, and selectively exposing, A method for forming a resist pattern, comprising: simultaneously developing a first resist layer and a second resist layer to expose a part of an unexposed portion of the first resist layer,
A resist pattern comprising a negative resist composition or a positive resist composition dissolved in an organic solvent that does not dissolve the first resist layer as the second negative resist composition or the positive resist composition. It is the formation method.
In the second aspect, steps (i ′) to (ii ′) below (i ′) a first resist layer is formed on a substrate using a negative resist composition, selectively exposed, and then developed. And forming a dense pattern on the first resist layer (ii ′) using a second negative resist composition or a positive resist composition on the dense pattern of the first resist layer. Forming a resist layer, selectively exposing, developing, and embedding a portion of the dense pattern;
A resist pattern comprising a negative resist composition or a positive resist composition dissolved in an organic solvent that does not dissolve the first resist layer as the second negative resist composition or the positive resist composition. It is the formation method.

  Note that the term “exposure” includes not only light irradiation but also general irradiation of radiation such as electron beam irradiation.

  The present invention can provide a resist pattern forming method capable of suppressing mixing in a resist pattern forming method in which a dense pattern is formed in a lower layer and a pattern is formed in an upper layer.

[First embodiment]
The first mode is selected in order to form a dense pattern by forming a first resist layer on the substrate using the first negative resist composition in steps (i) to (ii) below (i) (Ii) forming a second resist layer on the first resist layer using a second negative resist composition or a positive resist composition, and selectively exposing, A method for forming a resist pattern, comprising: simultaneously developing a first resist layer and a second resist layer to expose a part of an unexposed portion of the first resist layer,
A resist pattern comprising a negative resist composition or a positive resist composition dissolved in an organic solvent that does not dissolve the first resist layer as the second negative resist composition or the positive resist composition. It is the formation method.

Here, the dense pattern indicates that the interval between adjacent patterns is narrow when a pattern such as a line shape or a hole shape is formed. Specifically, for example, in the cross section of the pattern, the ratio of the distance to the adjacent pattern with respect to the width of the pattern is preferably 1 or less, particularly preferably 0.9 or less, and even 0.8 or less. . The lower limit is substantially 0.5 or more. Note that the width of the pattern in the hole-shaped pattern indicates a range in which the resist layer is removed, for example, the diameter of the hole in the hole pattern. The pattern width in the line pattern indicates the width of the line.
The sparse pattern has a larger interval between adjacent patterns than the dense pattern. Specifically, for example, in the cross section of the pattern, the ratio of the interval between adjacent patterns to the width of the pattern is preferably 2 or more, particularly preferably 3 or more, and even 5 or more. The upper limit value is substantially 10 or less.
The width and interval of the pattern indicate the size near the interface between the substrate and the resist layer.

  FIG. 1A shows a flow of an example of the procedure of the first aspect (hereinafter referred to as process 1). FIG. 2 is an explanatory diagram (cross-sectional view) of the process 1. FIG. 4 is a plan view showing a state after forming a dense pattern and a sparse pattern through a process.

  In the process 1, the following steps are sequentially performed.

(I-1) First negative resist composition coating step Using a coating apparatus, an acid generator component that generates an acid by exposure on the substrate 1 (hereinafter sometimes referred to as an “acid generator”). The chemical amplification type negative resist composition (first negative resist composition) is applied (see FIG. 2A).

(I-2) PAB (Pre-Bake) Step The applied resist film is heated to form the first resist layer 2 (see FIG. 2A).
The heating conditions are, for example, about 80 to 150 ° C. and 40 to 120 seconds (preferably 60 to 90 seconds).
The thickness of the first resist layer 2 is, for example, about 0.05 to 1.0 μm, and preferably 0.1 to 0.5 μm.

(I-3) Exposure Step The first resist layer 2 is selectively exposed to form a dense pattern. (See FIG. 2 (a)).
The “exposure portion” refers to an exposed range. The “unexposed portion” refers to an unexposed range.
That is, the exposed portion 2a ′ and the unexposed portion 2b are formed by selectively exposing the first resist layer 2 using a mask (reticle) 3 for a dense pattern.
FIG. 2A shows an example in which the hole pattern is exposed to form a dense pattern in which the pattern width D ¹ and the interval L ¹ are formed with a size of about 1: 1.
That is, as shown in FIG. 4, the first resist layer 2, densely disposed a plurality of holes 2a are at intervals L ¹ of the unexposed portions 2b of the width D ¹ of the pattern is formed by developing (dissolving) Selective exposure is performed to form a dense pattern.
The wavelength used for the exposure is not particularly limited, and ArF excimer laser, KrF excimer laser, F ₂ excimer laser, EUV (extreme ultraviolet), VUV (vacuum ultraviolet), EB (electron beam), X-ray, soft X-ray, etc. Although it can be performed using radiation, an ArF excimer laser is preferable (the same applies to the following exposure steps).

(I-4) PEB (post-exposure heat treatment) step The first resist layer 2 subjected to selective exposure is subjected to a heat treatment, and an acid component generated from the acid generator in the first resist layer 2 is appropriately adjusted. The exposure portion 2a ′ is made negative by diffusing.
The heating conditions are, for example, about 80 to 150 ° C. and 40 to 120 seconds (preferably 60 to 90 seconds).

(Ii-1) Application Step of Second Negative Resist Composition or Positive Resist Composition Using a coating apparatus, a chemically amplified negative resist composition containing an acid generator on the first resist layer 2 Or a positive resist composition is applied (see FIG. 2B).
In this example, a negative resist composition is applied.
The first negative resist composition and the second negative resist composition are a negative resist composition for forming the first resist layer 2 and a negative resist for forming the second resist layer 12. It is a term used to distinguish the composition from the convenience.

(Ii-2) PAB (Pre-Bake) Step The applied resist film is heated to form the second resist layer 12 (see FIG. 2B).
The heating conditions are, for example, about 80 to 150 ° C. and 40 to 120 seconds (preferably 60 to 90 seconds).
The thickness of the second resist layer 12 is, for example, about 0.05 to 1.0 μm, and preferably 0.1 to 0.5 μm.

(Ii-3) Exposure Step The second resist layer 12 is exposed.
That is, when the second resist layer 12 is selectively exposed using a desired mask (reticle) 13, an exposed portion 12a ′ and an unexposed portion 12b are formed (see FIG. 2B).
FIG. 2B shows an example in which the hole pattern is exposed to form a sparse pattern in which the pattern width D ² and the interval L ² are formed with a size of about 1: 2.
That is, as shown in FIG. 4, the region 21 located at the left and right ends in the drawing is not exposed, and in the region 22 sandwiched between these, the second resist layer 12 has a pattern width D ^2. hole 12a unexposed portion 12b of is formed by developing (dissolving) is subjected to selective exposure using a mask 13 such as are arranged at intervals L ^2.
Incidentally, as shown in FIG. 2 (b), FIG. 2 (c), the Figure 4, the sparse diameter of the pattern of holes 12a (width of the pattern) ^{D 2} is the hole 2a formed in the first resist layer 2 It is designed larger than the diameter (pattern width) D ^1. The hole 12a is formed in a range including the hole 2a formed immediately below the hole 12a.

(Ii-4) PEB (post-exposure heat treatment) step The second resist layer 12 subjected to the selective exposure is subjected to a heat treatment so that an acid component generated from the acid generator in the second resist layer 12 is appropriately treated. It diffuses and the exposed portion 12a ′ is made negative (see FIG. 2B).
The heating conditions are, for example, about 80 to 150 ° C. and 40 to 120 seconds (preferably 60 to 90 seconds).

(Ii-5) Development process of first resist layer and second resist layer A laminate of the first resist layer 2 and the second resist layer 12 is developed. For the development processing, for example, a TMHA aqueous solution (tetramethylammonium hydroxide aqueous solution) having a concentration of 0.1 to 10% by mass (preferably 0.5 to 5% by mass) is used.
When the development process is performed, in the region 22 shown in FIG. 4, as shown in FIG. 2C, first, the unexposed portion 12b of the second resist layer 12 is removed to form a sparsely patterned hole 12a. Then, the developer entering from the hole 12a comes into contact with the first resist layer 2 constituting the bottom surface of the hole 12a, whereby the unexposed portion 2b of the first resist layer 2 is developed and removed. Exposed. As a result, a hole 2a immediately below the hole 12a is formed. As a result, a sparse hole pattern in which the holes 2a and the holes 12a are continuous is formed.
In the region 21, since the light is not irradiated during the selective exposure, the second resist layer 12 is developed with a developer, and the dense pattern unexposed portion 2 b formed in the first resist layer 2 Development is performed to form holes 2a.

That is, in the region 22, the hole 2 a is formed in a dense pattern that can ensure a wide DOF characteristic, and thus can be accurately formed in a desired size. The sparse holes 12 a are formed on a part of the holes 2 a of the dense pattern formed in the first resist layer 2.
That is, in this method, a part of the wide DOF dense pattern formed in the lower first resist layer 2 is exposed and patterned by development, and used as a sparse pattern.
Even if a sparse pattern is formed on the first resist layer 2 as a lower layer from the beginning, a wide DOF characteristic cannot be ensured, but a sparse pattern having a wide DOF characteristic can be obtained through the above-described steps. it can.
Note that the DOF characteristics of the upper second resist layer 12 are not required to be as high as the pattern formed in the lower layer (first resist layer 2). This is because the hole 2a in the lower layer 2 is important in a sparse hole pattern in which the holes 2a and 12a are continuous. This is because the pattern of the lower layer 2 is transferred when the substrate is etched (depending on the pattern of the lower layer 2 when transferred to the substrate).

  In this manner, a so-called sparse / dense mixed pattern in which both a dense pattern region 21 and a sparse pattern region 22 having the same DOF characteristic are formed on one substrate can be obtained.

  When the second resist layer 12 is formed, the case where the positive resist composition is used is different from the example of the second negative resist composition described above in that the second resist layer 12 is exposed. The light transmitting portion (exposed portion) and the light blocking portion (unexposed portion) of the mask used in the process are reversed, and the exposed portion is removed with a developer.

  In the method of the present invention, a specific negative resist composition or a positive resist composition is used as the resist composition used for forming the second resist layer 12. Since these materials are the same as those in the second aspect, they will be described together after explaining the process example of the second aspect.

[Second embodiment]
In the second aspect, steps (i ′) to (ii ′) below (i ′) a first resist layer is formed on a substrate using a negative resist composition, selectively exposed, and then developed. And forming a dense pattern on the first resist layer (ii ′) using a second negative resist composition or a positive resist composition on the dense pattern of the first resist layer. Forming a resist layer, selectively exposing, developing, and embedding a portion of the dense pattern;
A resist pattern comprising a negative resist composition or a positive resist composition dissolved in an organic solvent that does not dissolve the first resist layer as the second negative resist composition or the positive resist composition. It is the formation method.

  FIG. 1B shows a flow of an example of the procedure of the second aspect (hereinafter referred to as process 2). FIG. 3 is an explanatory diagram (cross-sectional view) of the process 2. FIG. 4 is a plan view showing a state after forming a dense pattern and a sparse pattern through a process.

In the process 2, the following steps are sequentially performed.
(I′-1) First negative resist composition coating step The same as (i-1) in the first embodiment (see FIG. 3A).
(I′-2) PAB (pre-baking) step This is the same as (i-2) in the first embodiment (see FIG. 3A).
(I′-3) Exposure Step This is the same as (i-3) in the first aspect (see FIG. 3A).
(I′-4) PEB (post-exposure heat treatment) step This is the same as (i-4) in the first embodiment (see FIG. 3A).

(I′-5) First resist layer development step The first resist layer 2 is developed. For the development processing, for example, a TMHA aqueous solution (tetramethylammonium hydroxide aqueous solution) having a concentration of 0.1 to 10% by mass (preferably 0.5 to 5% by mass) is used.
When development processing is performed, is removed unexposed portion 2b as shown in FIG. 3 (b), the first resist layer 2, the width of the pattern D ¹ and spacing L ¹ Togayaku 1: 1 size A dense pattern having a plurality of holes 2a designed in (1) is obtained.
That is, as shown in FIG. 4, the first resist layer 2 entirely, hole 2a of the width D ¹ of the pattern is dense patterns are densely arranged at intervals L ¹ is formed.

(Ii'-1) Second negative resist composition or positive resist composition coating step As shown in FIG. 3C, a first resist layer in which a dense pattern is formed using a coating apparatus. A chemically amplified second negative resist composition or a positive resist composition containing an acid generator is applied onto 2.
In this example, a negative resist composition is applied.
The first negative resist composition and the second negative resist composition are a negative resist composition for forming the first resist layer 2 and a negative resist for forming the second resist layer 12. It is a term used to distinguish the composition from the convenience.
Then, the negative resist composition is filled in the hole 2a, the hole 2a is buried, a resist film is formed thereon, and the resist pattern formed on the first resist pattern layer 2 is covered with the resist film. The

(Ii′-2) PAB (Pre-Bake) Step The applied resist film is heat-treated to form the second resist layer 12 (see FIG. 3C).
The heating temperature is, for example, about 80 to 150 ° C. and 40 to 120 seconds (preferably 60 to 90 seconds).
The thickness of the second resist layer 12 (the length from the surface of the first resist layer 2 to the surface of the second resist layer 12) is, for example, about 0.05 to 1.0 μm, preferably 0.1. About 0.5 μm.

(Ii′-3) Exposure Step The second resist layer 12 is exposed.
In other words, the second resist layer 12 is selectively exposed using a desired mask (reticle) 13.
FIG. 3C shows an example in which the hole pattern is exposed to form a sparse pattern in which the pattern width D ² and the interval L ² are formed with a size of about 1: 2.
That is, also in this example, the same range is exposed using the same mask as in the first embodiment, and the region 21 is not exposed as shown in FIG. 4, and the second resist layer 12 is patterned in the region 22. If hole 12a of the width ^{D 2} of selectively exposing as will be spaced ^{L 2,} the exposure unit 12a ', the unexposed portion 12b is formed.
As shown in FIGS. 3C and 4, the diameter (pattern width) D ² of the sparsely patterned holes 12 a is the diameter (pattern width) of the holes 2 a formed in the first resist layer 2. D is designed larger than ^1. The hole 12a is formed in a range including the hole 2a formed immediately below the hole 12a.

(Ii′-4) PEB (post-exposure heat treatment) step The second resist layer 12 subjected to selective exposure is heat-treated to moderately generate an acid component generated from the acid generator in the second resist layer 12. While being diffused, it is made negative (see FIG. 3C).
The heating temperature is, for example, about 80 to 150 ° C. and 40 to 120 seconds (preferably 60 to 90 seconds).

(Ii′-5) Development Step of Second Resist Layer When the laminate of the first resist layer 2 and the second resist layer 12 is developed, the region 22 shown in FIG. 4 is shown in FIG. Similarly, the unexposed portion 12b of the second resist layer 12 is removed to form a sparsely patterned hole 12a.
As a result, in the region 22, a sparse hole pattern in which the holes 12a and the holes 2a immediately below are continuous is formed. In the region 21, since the second resist layer 12 is developed with a developer and the dense pattern of the first resist layer 2 is embedded because no light is applied during the selective exposure. The resist composition is also removed at the same time to form holes 2a.
That is, in this method, a wide DOF dense pattern formed in the first resist layer 2 is embedded in the second resist layer 12, selectively exposed and developed, and a part of the second resist layer 12 is removed. Thus, by exposing a part of the dense pattern, the dense pattern is used as a sparse pattern. Note that, in the dense pattern, a portion where the second resist layer 12 is not removed is buried with the second resist layer 12.
Although a wide DOF characteristic cannot be ensured even if a sparse pattern is formed on the first resist layer 2 as a lower layer from the beginning, a wide DOF sparse pattern can be obtained through the above-described steps.

Note that the DOF characteristics of the upper second resist layer 12 are not required to be as high as the pattern formed in the first resist layer (lower layer) 2. This is because the hole 2a in the lower layer 2 is important in a sparse hole pattern in which the holes 2a and 12a are continuous. This is because the pattern of the lower layer 2 is transferred when the substrate is etched (depending on the pattern of the lower layer when transferred to the substrate).
In this way, as shown in FIG. 4, a so-called sparse / dense mixed pattern in which both a dense pattern region 21 and a sparse pattern region 22 are formed on one substrate is obtained.

In Process 2, there is an advantage that scum after development is less likely to occur.
In addition, since the first resist layer is once developed and then the second resist layer is formed, the second resist layer is not affected by the acid generator in the first resist layer, and is more accurate. There is also an advantage that the pattern can be formed.

  In the formation of the second resist layer 12, when a positive resist composition is used, the light transmission part of the mask used when the second resist layer 12 is exposed differs from the above example. (Exposed portion) and light blocking portion (unexposed portion) are reversed, and the exposed portion is removed with a developer, and the others are the same.

  The method of the present invention is characterized in that a specific second negative resist composition or positive resist composition is used as the resist composition for forming the second resist layer 12. Since these materials are common to the first aspect, they will be described together below.

[Second negative resist composition]
The second negative resist composition used in the present invention is characterized by dissolving materials such as a base material component and an acid generator component that generates acid upon exposure in a specific organic solvent.

Organic Solvent In the present invention, an organic solvent that does not dissolve the first resist layer is used. Thereby, mixing can be suppressed.
As such an organic solvent, any solvent that is not compatible with the first resist layer can be used.
The fact that the first resist layer is not dissolved preferably means, for example, that after forming a first resist layer having a thickness of 0.2 μm under a condition of 23 ° C. and immersing it in an organic solvent, after 60 minutes It shows that the film thickness does not vary.

Examples of such a solvent include alcohol solvents and fluorine solvents. These can be used alone or in combination.
Among these, alcohol solvents are preferable from the viewpoint of applicability and solubility of materials such as resin components. Therefore, the organic solvent preferably contains an alcohol solvent.
The alcohol solvent is more preferably a monohydric alcohol. Among them, although depending on the number of carbons, a primary or secondary monohydric alcohol is preferable, and a primary monohydric alcohol is most preferable.
The boiling point is preferably 80 to 160 ° C., more preferably 90 to 150 ° C., and preferably 100 to 135 ° C., coating properties, stability of the composition during storage, and heating in the PAB process and PEB process. Most preferable from the viewpoint of temperature.
Here, the monohydric alcohol means a case where the number of hydroxy groups contained in the alcohol molecule is 1, and does not include a dihydric alcohol, a trihydric alcohol, or a derivative thereof.

  Specific examples of the alcohol solvent include n-amyl alcohol (boiling point 138.0 ° C.), s-amyl alcohol (boiling point 119.3 ° C.), t-amyl alcohol (101.8 ° C.), isoamyl alcohol (boiling point 130.degree. C.). 8 ° C), isobutanol (also called isobutyl alcohol or 2-methyl-1-propanol) (boiling point 107.9 ° C), isopropyl alcohol (boiling point 82.3 ° C), 2-ethylbutanol (boiling point 147 ° C), neopentyl Alcohol (boiling point 114 ° C), n-butanol (boiling point 117.7 ° C), s-butanol (boiling point 99.5 ° C), t-butanol (boiling point 82.5 ° C), 1-propanol (boiling point 97.2 ° C) , N-hexanol (boiling point 157.1 ° C.), 2-heptanol (boiling point 160.4 ° C.), 3-heptanol (boiling point 156.2) ), 2-methyl-1-butanol (boiling point 128.0 ° C.), 2-methyl-2-butanol (boiling point 112.0 ° C.), 4-methyl-2-pentanol (boiling point 131.8 ° C.) and the like. It is done. In particular, isobutanol (2-methyl-1-propanol), 4-methyl-2-pentanol, n-butanol and the like are preferable. Of these, isobutanol and n-butanol are preferred.

Examples of the fluorine-based solvent include perfluoro-2-butyltetrahydrofuran.
The organic solvent can be used alone or in combination.

As long as the first resist layer is not dissolved, an organic solvent other than an alcohol solvent, a fluorine solvent, or the like may be used as the organic solvent, but a preferable solvent such as an alcohol solvent, a fluorine solvent, or the like is 80% by mass or more, It is preferable to use 100% by mass.
As the other organic solvent, one or two or more kinds of conventionally known solvents for chemically amplified resists can be appropriately selected and used.
For example, lactones such as γ-butyrolactone, ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone, 2-heptanone, ethylene glycol, ethylene glycol monoacetate, diethylene glycol, diethylene glycol monoacetate, propylene glycol, propylene glycol monoacetate Polyhydric alcohols such as dipropylene glycol or dipropylene glycol monoacetate monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether and derivatives thereof, cyclic ethers such as dioxane, Methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, pyruvate Le, methyl methoxypropionate, esters such as ethyl ethoxypropionate can be exemplified.

  Although the amount of the organic solvent used is not particularly limited, it is a concentration that can be applied to a substrate and the like, and is appropriately set according to the coating film thickness. In general, the solid content concentration of the resist composition is 2 to 20 mass. %, Preferably 5-15% by mass.

Other compositions of the second negative resist composition The second negative resist composition comprises (A0-0) an alkali-soluble resin, (B) an acid generator component that generates an acid upon exposure, and (C) a crosslink. A chemical amplification type containing an agent component is preferred.
(A0-0) Alkali-soluble resin, (B) Acid generator component that generates acid upon exposure, (C) Crosslinker component, other optional components that can be added, etc. are not particularly limited, and are conventionally negative type What was proposed as a material of a resist composition can be used suitably.
In view of the influence of the second negative resist composition coming into contact with the first resist layer, it is desirable that the second negative resist composition has high sensitivity.
Preferred examples include the following.

In the following description of examples of negative resist compositions, the meanings of terms are as follows.
“Structural unit” refers to a monomer unit constituting a polymer (resin).
The “structural unit derived from acrylic acid” means a structural unit formed by cleavage of an ethylenic double bond of acrylic acid.
The “structural unit derived from an acrylate ester” means a structural unit constituted by cleavage of an ethylenic double bond of an acrylate ester.
The “structural unit derived from an acrylate ester” has a concept including a hydrogen atom at the α-position substituted with another substituent such as a halogen atom, an alkyl group, or a halogenated alkyl group. In the “structural unit derived from acrylic acid” and “structural unit derived from acrylate ester”, the term “α-position (α-position carbon atom)” means that a carboxy group is present unless otherwise specified. It is a bonded carbon atom.
The “structural unit derived from acrylic acid” is a structural unit in which a hydrogen atom bonded to a carbon atom at the α-position is substituted with another substituent such as a halogen atom, an alkyl group, or a halogenated alkyl group, The concept includes a structural unit derived from an acrylate ester in which a hydrogen atom is bonded to a carbon atom at the position.
Further, the “alkyl group” includes a linear, cyclic or branched alkyl group unless otherwise specified. Unless otherwise specified, “halogen” includes, for example, a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and is preferably a fluorine atom.

As the (A0-0) resin component (A0-0) component, (A0) a resin component containing at least a fluorinated hydroxyalkyl group and an alicyclic group is preferable.
Among them, the component (A0) includes (A) a structural unit (a1) containing an alicyclic group having a fluorinated hydroxyalkyl group, and a structural unit derived from an acrylate ester, The resin component which has a structural unit (a2) containing a containing alicyclic group is preferable.

· Constituent unit (a1) containing an alicyclic group having a fluorinated hydroxyalkyl group
By having the structural unit (a1), it is possible to obtain an effect of suppressing swelling which tends to cause a problem in the negative resist composition.

.. Alicyclic group having fluorinated hydroxyalkyl group In the structural unit (a1), the alicyclic group has a fluorinated hydroxyalkyl group.
The fluorinated hydroxyalkyl group is an alkyl group having a hydroxy group in which part or all of the hydrogen atoms of the alkyl group are substituted with fluorine. In the group, the hydrogen atom of the hydroxyl group is easily liberated by fluorination.
In the fluorinated hydroxyalkyl group, the alkyl group is linear or branched, and the number of carbon atoms is not particularly limited, but is, for example, 1 to 20, preferably 4 to 16. The number of hydroxyl groups is not particularly limited, but is usually one.
In particular, in the alkyl group, a fluorinated alkyl group and / or a fluorine atom is bonded to the α-position carbon atom to which the hydroxy group is bonded (in this case, the α-position carbon atom of the hydroxyalkyl group). Those are preferred. In the fluorinated alkyl group bonded to the α-position, it is preferable that all of the hydrogen atoms of the alkyl group are substituted with fluorine.

  The alicyclic group may be monocyclic or polycyclic, but is preferably a polycyclic group. Moreover, an alicyclic hydrocarbon group is preferable. Moreover, it is preferable that it is saturated. Moreover, it is preferable that carbon number of an alicyclic group is 5-15.

Specific examples of the alicyclic group include the following.
That is, examples of the monocyclic group include groups in which one hydrogen atom has been removed from a cycloalkane. Examples of the polycyclic group include groups in which one or two hydrogen atoms have been removed from bicycloalkane, tricycloalkane, tetracycloalkane or the like.
More specifically, examples of the monocyclic group include groups in which one or two hydrogen atoms have been removed from cyclopentane or cyclohexane, and two hydrogen atoms have been removed from cyclohexane.
Examples of the polycyclic group include groups in which one or two hydrogen atoms have been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane or tetracyclododecane.
Such a polycyclic group is appropriately selected from among many that have been proposed as constituting an acid dissociable, dissolution inhibiting group in a resin for a positive photoresist composition for ArF excimer laser process, for example. Can be used.
Of these, groups in which two hydrogen atoms have been removed from cyclohexane, adamantane, norbornane, and tetracyclododecane are preferred because they are readily available in the industry.
Of these exemplified monocyclic groups and polycyclic groups, groups in which two hydrogen atoms have been removed from norbornane are particularly preferred.

  The structural unit (a1) is preferably a structural unit derived from acrylic acid, and has a structure (carboxy group) in which the alicyclic group is bonded to the ester group [—C (O) O—] of the acrylate ester. A structure in which a hydrogen atom is substituted with the alicyclic group is preferred.

  As the structural unit (a1), more specifically, those represented by the following general formula (1) are preferred.

（式中、Ｒは水素原子、アルキル基、フッ素化アルキル基またはフッ素原子であり、ｍ、ｎ、ｐはそれぞれ独立して１〜５の整数である。）

(In the formula, R is a hydrogen atom, an alkyl group, a fluorinated alkyl group or a fluorine atom, and m, n and p are each independently an integer of 1 to 5.)

R is a hydrogen atom, an alkyl group, a fluorinated alkyl group or a fluorine atom.
The alkyl group is preferably a lower alkyl group having 5 or less carbon atoms. For example, a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group A methyl group is preferable.
The fluorinated alkyl group is preferably a group in which one or more hydrogen atoms of a lower alkyl group having 5 or less carbon atoms are substituted with fluorine atoms. Specific examples of the alkyl group are the same as described above. The hydrogen atoms substituted with fluorine atoms may be part or all of the hydrogen atoms constituting the alkyl group.
In R, a hydrogen atom or an alkyl group is preferable, a hydrogen atom or a methyl group is particularly preferable, and a hydrogen atom is most preferable.
N, m, and p are each preferably 1.

  Among those represented by the general formula (1), a structural unit derived from α, α′-bis- (trifluoromethyl) -bicyclo [2.2.1] hept-5-ene-2-ethanol acrylate is From the viewpoints of effects, synthesis is easy, and high etching resistance can be obtained.

  The structural unit (a1) can be used alone or in combination of two or more.

A structural unit derived from an acrylate ester and containing a hydroxyl group-containing alicyclic group (a2)
In the component (A), the effect of suppressing swelling is improved by including the structural unit (a2). Moreover, the effect of improving etching resistance can be obtained.
When the component (A) is blended with the negative resist composition, the hydroxyl group (alcoholic hydroxyl group) of the structural unit (a2) reacts with the crosslinking agent (C) by the action of the acid generated from the acid generator (B). As a result, the component (A) is changed from a soluble property to an insoluble property with respect to the alkaline developer, and becomes negative.

  In the structural unit (a2), the hydroxyl group-containing alicyclic group is preferably bonded to the ester group (—C (O) O—) of the acrylate ester.

In the structural unit (a2), another substituent may be bonded to the α-position (α-position carbon atom) instead of a hydrogen atom. The substituent is preferably an alkyl group, a fluorinated alkyl group, or a fluorine atom.
These explanations are the same as those of R in the general formula (1) of the structural unit (a1), and among those which can be bonded to the α-position, a hydrogen atom or an alkyl group is preferred, An atom or a methyl group is preferred, and a hydrogen atom is most preferred.

The hydroxyl group-containing alicyclic group is a group in which a hydroxyl group is bonded to the alicyclic group.
It is preferable that 1-3 hydroxyl groups are couple | bonded, for example, More preferably, it is one.
Moreover, the C1-C4 alkyl group may couple | bond with the alicyclic group.

  Here, the alicyclic group may be monocyclic or polycyclic, but is preferably a polycyclic group. Moreover, an alicyclic hydrocarbon group is preferable. Moreover, it is preferable that it is saturated. Moreover, it is preferable that carbon number of an alicyclic group is 5-15.

Specific examples of the alicyclic group include the following.
That is, examples of the monocyclic group include groups in which one hydrogen atom has been removed from a cycloalkane. Examples of the polycyclic group include groups in which one hydrogen atom has been removed from bicycloalkane, tricycloalkane, tetracycloalkane and the like.
More specifically, examples of the monocyclic group include groups in which one hydrogen atom has been removed from cyclopentane or cyclohexane, and a cyclohexyl group is preferred.
Examples of the polycyclic group include groups in which one hydrogen atom has been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane.
Such a polycyclic group is appropriately selected from among many that have been proposed as constituting an acid dissociable, dissolution inhibiting group in a resin for a positive photoresist composition for ArF excimer laser process, for example. Can be used.
Among these, a cyclohexyl group, an adamantyl group, a norbornyl group, and a tetracyclododecanyl group are preferable because they are easily available on the industry.
Among these exemplified monocyclic groups and polycyclic groups, a cyclohexyl group and an adamantyl group are preferable, and an adamantyl group is particularly preferable.

  As a specific example of the structural unit (a2), for example, a structural unit represented by the following general formula (2) is preferable.

（Ｒは水素原子、アルキル基、フッ素化アルキル基またはフッ素原子であり、ｑは１〜３の整数である。）

(R is a hydrogen atom, an alkyl group, a fluorinated alkyl group or a fluorine atom, and q is an integer of 1 to 3.)

R is a hydrogen atom, an alkyl group, a fluorinated alkyl group, or a fluorine atom bonded to the α-position, and is the same as described in the general formula (1). In the general formula (2), R is most preferably a hydrogen atom.
Moreover, q is an integer of 1 to 3, but is preferably 1.
Further, the bonding position of the hydroxyl group is not particularly limited, but is preferably bonded to the position of the 3rd position of the adamantyl group.

  As the structural unit (a2), one type or a mixture of two or more types can be used.

A structural unit derived from acrylic acid and having no cyclic structure, the structural unit having an alcoholic hydroxyl group in the side chain (a3)
The component (A) preferably has a structural unit (a3) in addition to the structural unit (a1) and the structural unit (a2).
By having the structural unit (a3), an effect of improving the resolution can be obtained. Moreover, film loss can be suppressed. Moreover, the controllability of the crosslinking reaction during pattern formation is improved. Furthermore, the film density tends to improve. Thereby, there exists a tendency for heat resistance to improve. Furthermore, etching resistance is also improved.

“No cyclic structure” means having no alicyclic group or aromatic group.
The structural unit (a3) is clearly distinguished from the structural unit (a2) by not having a cyclic structure. When the component (A) having the structural unit (a3) is added to the negative resist composition, the hydroxyl group of the hydroxyalkyl group of the structural unit (a3) together with the hydroxyl group of the structural unit (a2) becomes (B) acid. By the action of the acid generated from the generating agent, it reacts with the (C) cross-linking agent, whereby the component (A) changes from a soluble property to an insoluble property with respect to the alkaline developer and becomes negative.

“Having an alcoholic hydroxyl group in the side chain” includes, for example, a structural unit to which a hydroxyalkyl group is bonded.
The hydroxyalkyl group may be bonded to the α-position carbon atom of the main chain (the portion where the ethylenic double bond of acrylic acid is cleaved), or substituted with a hydrogen atom of the carboxy group of acrylic acid to form an ester. In the structural unit (a3), it is preferable that at least one or both of them be present.

  When a hydroxyalkyl group is not bonded to the α-position, an alkyl group, a fluorinated alkyl group, or a fluorine atom may be bonded to the α-position carbon atom instead of a hydrogen atom. These are the same as the description of R in the general formula (1).

  The structural unit (a3) is preferably one represented by the following general formula (3).

（式中、Ｒ^１は水素原子、アルキル基、フッ素化アルキル基、フッ素原子またはヒドロキシアルキル基であり、Ｒ^２は、水素原子、アルキル基、またはヒドロキシアルキル基であり、かつＲ^１、Ｒ^２の少なくとも一方はヒドロキシアルキル基である。）

Wherein R ¹ is a hydrogen atom, an alkyl group, a fluorinated alkyl group, a fluorine atom or a hydroxyalkyl group, R ² is a hydrogen atom, an alkyl group or a hydroxyalkyl group, and R ¹ , R ² At least one of them is a hydroxyalkyl group.)

In R ¹ , the hydroxyalkyl group is preferably a lower hydroxyalkyl group having 10 or less carbon atoms, more preferably a lower hydroxyalkyl group having 2 to 8 carbon atoms, and most preferably a hydroxymethyl group or a hydroxyethyl group. It is. The number of hydroxyl groups and the bonding position are not particularly limited, but are usually one and preferably bonded to the terminal of the alkyl group.
In R ¹ , the alkyl group is preferably a lower alkyl group having 10 or less carbon atoms, more preferably a lower alkyl group having 2 to 8 carbon atoms, and most preferably an ethyl group or a methyl group.
In R ¹ , the fluorinated alkyl group is preferably a lower alkyl group having 5 or less carbon atoms (preferably an ethyl group or a methyl group) in which part or all of the hydrogen atoms are substituted with fluorine.
In R ² , the alkyl group and the hydroxyalkyl group are the same as R ¹ .

Specifically, a structural unit derived from (α-hydroxyalkyl) acrylic acid, a structural unit derived from (α-hydroxyalkyl) acrylic acid alkyl ester, and a (α-alkyl) acrylic acid hydroxyalkyl ester. Structural units.
Especially, it is preferable that a structural unit (a3) contains the structural unit induced | guided | derived from the (α-hydroxyalkyl) acrylic acid alkyl ester from the point of an effect improvement and a film density improvement. Among them, a structural unit derived from (α-hydroxymethyl) -acrylic acid ethyl ester or α- (hydroxymethyl) -acrylic acid methyl ester is preferable.
The structural unit (a3) preferably contains a structural unit derived from (α-alkyl) acrylic acid hydroxyalkyl ester. Among them, a structural unit derived from α-methyl-acrylic acid hydroxyethyl ester or α-methyl-acrylic acid hydroxymethyl ester is preferable.

  The structural unit (a3) can be used alone or in combination of two or more.

A structural unit derived from an acrylate ester containing a lactone-containing monocyclic or polycyclic group (a4)
In addition to the structural unit (a1) and the structural unit (a2), the component (A) further has a structural unit (a4) derived from an acrylate ester containing a lactone-containing monocyclic or polycyclic group. Is preferred.
In addition to the structural unit (a1), the structural unit (a2), and the structural unit (a4), the structural unit (a3) may be further combined.

  When the lactone-containing monocyclic or polycyclic group of the structural unit (a4) is used for forming a resist film, it increases adhesion of the resist film to the substrate and increases hydrophilicity with the developer. It is effective. In addition, the effect of suppressing swelling is improved.

  In addition, lactone here shows one ring containing -O-C (O)-structure, and this is counted as one ring. Therefore, when it has only a lactone ring, it is called a monocyclic group, and when it has another ring structure, it is called a polycyclic group regardless of the structure.

  As the structural unit (a4), any structural unit can be used without particular limitation as long as it has a lactone ring having both the ester structure (—O—C (O) —) and a ring structure. is there.

Specifically, examples of the lactone-containing monocyclic group include groups in which one hydrogen atom has been removed from γ-butyrolactone. Examples of the lactone-containing polycyclic group include groups in which one hydrogen atom has been removed from a bicycloalkane, tricycloalkane, or tetracycloalkane having a lactone ring.
In particular, a group obtained by removing one hydrogen atom from a lactone-containing tricycloalkane having the following structural formula is advantageous in that it is easily available industrially.

  In the structural unit (a4), those having a lactone-containing polycyclic group are preferred, and those having norbornane lactone are preferred.

In the structural unit (a4), another substituent may be bonded to the α-position (α-position carbon atom) instead of a hydrogen atom. The substituent is preferably an alkyl group, a fluorinated alkyl group, or a fluorine atom.
These explanations are the same as those of R in the general formula (1) of the structural unit (a1), and among those which can be bonded to the α-position, a hydrogen atom or an alkyl group is preferred, An atom or a methyl group is preferred, and a hydrogen atom is most preferred.

  More specifically, examples of the structural unit (a4) include structural units represented by general formulas (a4-1) to (a4-5) shown below.

（式中、Ｒは前記と同じである。Ｒ’はそれぞれ独立して水素原子、アルキル基、または炭素数１〜５のアルコキシ基であり、ｍは０または１の整数である。）

(In the formula, R is the same as above. R ′ is independently a hydrogen atom, an alkyl group, or an alkoxy group having 1 to 5 carbon atoms, and m is an integer of 0 or 1.)

  The alkyl group for R ′ in formulas (a4-1) to (a4-5) is the same as the alkyl group for R in the structural unit (a1). In general formulas (a4-1) to (a4-5), R ′ is preferably a hydrogen atom in view of industrial availability.

 And as a structural unit (a4), the unit represented by general formula (a4-2)-(a4-3) is the most preferable.

  As the structural unit (a4), one type may be used alone, or two or more types may be used in combination.

-Combination of Structural Unit (a1) to Structural Unit (a4) In the component (A), it is preferable that the structural unit (a1) to the structural unit (a4) are selected from, for example, four types of combinations as follows.

(A) Select so as to include a combination of the structural unit (a1) and the structural unit (a2).
At this time, it is preferable that the structural unit (a1) is a structural unit represented by the general formula (1), and R in the general formula (1) is a hydrogen atom. At the same time, it is preferable that a hydrogen atom is bonded to the α-position (carbon atom to which the carboxy group is bonded) of the structural unit (a2). The reason is that the dissolution contrast becomes good.

(B) Selection is made so as to include a combination of the structural unit (a1), the structural unit (a2), and the structural unit (a3).
At this time, it is preferable that the structural unit (a1) is a structural unit represented by the general formula (1), and R in the general formula (1) is a hydrogen atom. At the same time, a hydrogen atom is preferably bonded to the α-position of the structural unit (a2). The reason is that the dissolution contrast becomes good.

(C) Selection is made so as to include a combination of the structural unit (a1), the structural unit (a2), and the structural unit (a4).
At this time, it is preferable that the structural unit (a1) is a structural unit represented by the general formula (1), and R in the general formula (1) is a hydrogen atom. At the same time, it is preferable that a hydrogen atom is bonded to the α-position of the structural unit (a2) and a hydrogen atom is bonded to the α-position of the structural unit (a4).
The reason is that the dissolution contrast becomes good.

(D) Selection is made so as to include a combination of the structural unit (a1), the structural unit (a2), the structural unit (a3), and the structural unit (a4).
At this time, it is preferable that the structural unit (a1) is a structural unit represented by the general formula (1), and R in the general formula (1) is a hydrogen atom. At the same time, it is preferable that a hydrogen atom is bonded to the α-position of the structural unit (a2) and a hydrogen atom is bonded to the α-position of the structural unit (a4).
The reason is that the dissolution contrast becomes good.

-Ratio of the structural unit (a1) to the structural unit (a4) In combining the structural unit (a1) to the structural unit (a4) with the component (A), as described above, (a), (b), (c) It is preferable to select four types of combinations classified into (d). Then, about these, the ratio of each preferable structural unit is shown below, respectively.
(A) Combination of structural unit (a1) and structural unit (a2) At least two of structural unit (a1) and structural unit (a2) are essential, and preferably a resin comprising these two structural units, It is preferable that the ratio of each structural unit in it satisfies the following numerical ranges.
That is, the proportion of the structural unit (a1) is preferably 20 to 80 mol%, more preferably 30 to 70 mol%, and most preferably 35 to 55 mol%.
The proportion of the structural unit (a2) is preferably 20 to 80 mol%, more preferably 30 to 7
It is 0 mol%, Most preferably, it is 45-65 mol%.
By satisfying these ranges, the effect of suppressing swelling is improved.

(B) Combination of structural unit (a1), structural unit (a2), and structural unit (a3) A resin having structural unit (a1), structural unit (a2), and structural unit (a3), preferably these In the case of a resin composed of the following structural units, the proportion of each structural unit in the resin preferably satisfies the following numerical range.
That is, the proportion of the structural unit (a1) is preferably 20 to 80 mol%, more preferably 30 to 70 mol%, and most preferably 35 to 55 mol%.
The proportion of the structural unit (a2) is preferably 10 to 70 mol%, more preferably 10 to 50 mol.
It is mol%, More preferably, it is 20-40 mol%.
The proportion of the structural unit (a3) is preferably 10 to 70 mol%, more preferably 10 to 4
0 mol%, most preferably 15-35 mol%.
By satisfying these ranges, the effect of suppressing swelling is improved. And especially by mix | blending a structural unit (a2) and a structural unit (a3) with sufficient balance, moderate contrast is obtained and resolution improves. In addition, etching resistance is improved. Furthermore, a good exposure margin can be obtained.

(C) Combination of structural unit (a1), structural unit (a2), and structural unit (a4) A resin having structural units (a1), (a2), and (a4), and preferably a resin comprising these structural units In this case, the proportion of each structural unit in the resin preferably satisfies the following numerical range.
That is, the proportion of the structural unit (a1) is preferably 20 to 85 mol%, more preferably 30 to 70 mol%, and most preferably 35 to 50 mol%.
The proportion of the structural unit (a2) is preferably 14 to 70 mol%, more preferably 15 to 50.
It is mol%, Most preferably, it is 30-50 mol%.
The proportion of the structural unit (a4) is preferably 1 to 70 mol%, more preferably 3 to 50 mol%, and most preferably 5 to 20 mol%.
By satisfying these ranges, the effect of suppressing swelling is improved. Further, the resist pattern shape is improved.
Further, by blending (a1), (a2) and (a4) with a good balance, an appropriate contrast can be obtained and the resolution is improved. In addition, etching resistance is improved. Furthermore, a good exposure margin can be obtained.

(D) A combination of the structural unit (a1), the structural unit (a2), the structural unit (a3), and the structural unit (a4) is a resin having all the structural units (a1) to (a4), preferably In the case of a resin composed of the following structural units, the proportion of each structural unit in the resin preferably satisfies the following numerical range.
That is, the proportion of the structural unit (a1) is preferably 10 to 85 mol%, more preferably 20 to 70 mol%, and most preferably 25 to 50 mol%.
The proportion of the structural unit (a2) is preferably 10 to 80 mol%, more preferably 20 to 70 mol%, and most preferably 30 to 50 mol%.
The proportion of the structural unit (a3) is preferably 4 to 70 mol%, more preferably 7 to 50 mol%, and most preferably 10 to 30 mol%.
The proportion of the structural unit (a4) is preferably 1 to 70 mol%, more preferably 3 to 50 mol%, and most preferably 5 to 20 mol%.
By satisfying these ranges, the effect of suppressing swelling is further improved. Further, the resist pattern shape is improved.
Further, by blending the structural unit (a1) to the structural unit (a4) in a balanced manner, an appropriate contrast can be obtained and resolution can be improved. In addition, etching resistance is improved. Furthermore, a good exposure margin can be obtained.

The component (A) may have another copolymerizable structural unit other than the structural units (a1) to (a4), but the structural unit (a1) to the structural unit (a4). It is preferable that the resin has a structural unit selected from
Here, the main component is preferably a total of 70 mol% or more, preferably 80 mol% or more, preferably 100%, among the structural units selected from these.

  In the component (A), particularly preferred is a resin comprising the structural unit (a1) and the structural unit (a2), or a resin comprising the structural unit (a1), the structural unit (a2) and the structural unit (a3), Or a resin comprising the structural unit (a1), the structural unit (a2) and the structural unit (a4), or a resin comprising the structural unit (a1) to the structural unit (a4), more preferably the structural unit (a1) and the structural unit. It is a resin composed of the unit (a2) and the structural unit (a3).

-Mass average molecular weight The mass average molecular weight (Mw; polystyrene-converted mass average molecular weight by gel permeation chromatography) of the component (A) is preferably 2000 to 30000, more preferably 2000 to 10000, and most preferably 3000 to 8000. . By setting it as this range, it is preferable from the point of suppression of swelling and the suppression of microbridge by this. Moreover, it is preferable from the point of high resolution. When the molecular weight is low, good characteristics tend to be obtained.

The component (A) can be obtained, for example, by radical polymerization of a monomer for deriving each structural unit by a conventional method.
(A) A component can be used 1 type or in mixture of 2 or more types.

Moreover, the preferable mass mean molecular weight of the (A0-0) component and the (A0) component is the same as that of the (A) component.
The (A0-0) component and the (A0) component can be used alone or in combination. And (A0-0) component and (A0) component can also use resin other than (A) component.
What is necessary is just to adjust content of (A0-0) component according to the resist film thickness to form.

(B) Acid generator component that generates acid by exposure The component (B) can be used without particular limitation from known acid generators used in conventional chemically amplified resist compositions.
Examples of such acid generators include onium salt acid generators such as iodonium salts and sulfonium salts, oxime sulfonate acid generators, bisalkyl or bisarylsulfonyldiazomethanes, poly (bissulfonyl) diazomethanes, and the like. There are various known diazomethane acid generators, iminosulfonate acid generators, disulfone acid generators, and the like.

  Specific examples of the onium salt-based acid generator include diphenyliodonium trifluoromethanesulfonate or nonafluorobutanesulfonate, bis (4-tert-butylphenyl) iodonium trifluoromethanesulfonate or nonafluorobutanesulfonate, and triphenylsulfonium trifluoromethane. Sulfonate, its heptafluoropropane sulfonate or its nonafluorobutane sulfonate, tri (4-methylphenyl) sulfonium trifluoromethane sulfonate, its heptafluoropropane sulfonate or its nonafluorobutane sulfonate, dimethyl (4-hydroxynaphthyl) sulfonium trifluoromethane Sulfonate, its heptafluoropropane sulphonate or its Nafluorobutane sulfonate, trifluoromethane sulfonate of monophenyldimethylsulfonium, heptafluoropropane sulfonate or nonafluorobutane sulfonate thereof, trifluoromethane sulfonate of diphenyl monomethylsulfonium, heptafluoropropane sulfonate or nonafluorobutane sulfonate thereof, (4- Trifluoromethanesulfonate of methylphenyl) diphenylsulfonium, its heptafluoropropanesulfonate or its nonafluorobutanesulfonate, trifluoromethanesulfonate of (4-methoxyphenyl) diphenylsulfonium, its heptafluoropropanesulfonate or its nonafluorobutanesulfonate, tri (4 -Tert-bu Le) trifluoromethanesulfonate triphenylsulfonium, its like heptafluoropropane sulfonate or nonafluorobutane sulfonates.

  Specific examples of the oxime sulfonate acid generator include α- (methylsulfonyloxyimino) -phenylacetonitrile, α- (methylsulfonyloxyimino) -p-methoxyphenylacetonitrile, α- (trifluoromethylsulfonyloxyimino)- Phenylacetonitrile, α- (trifluoromethylsulfonyloxyimino) -p-methoxyphenylacetonitrile, α- (ethylsulfonyloxyimino) -p-methoxyphenylacetonitrile, α- (propylsulfonyloxyimino) -p-methylphenylacetonitrile, α- (methylsulfonyloxyimino) -p-bromophenylacetonitrile and the like can be mentioned. Of these, α- (methylsulfonyloxyimino) -p-methoxyphenylacetonitrile is preferred.

Among diazomethane acid generators, specific examples of bisalkyl or bisarylsulfonyldiazomethanes include bis (isopropylsulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (1,1-dimethylethylsulfonyl) diazomethane, Examples include bis (cyclohexylsulfonyl) diazomethane, bis (2,4-dimethylphenylsulfonyl) diazomethane, and the like.
Examples of poly (bissulfonyl) diazomethanes include 1,3-bis (phenylsulfonyldiazomethylsulfonyl) propane (compound A) and 1,4-bis (phenylsulfonyldiazomethylsulfonyl) having the following structure. Butane (compound B), 1,6-bis (phenylsulfonyldiazomethylsulfonyl) hexane (compound C), 1,10-bis (phenylsulfonyldiazomethylsulfonyl) decane (compound D), 1,2-bis (cyclohexylsulfonyl) Diazomethylsulfonyl) ethane (compound E), 1,3-bis (cyclohexylsulfonyldiazomethylsulfonyl) propane (compound F,), 1,6-bis (cyclohexylsulfonyldiazomethylsulfonyl) hexane (compound G), 1,10 -Bis (cyclohe Such Sil diazomethylsulfonyl) decane (compound H) can be mentioned.

  As the component (B), the following general formula (b-1) or (b-2)

［式中、Ｘは、少なくとも１つの水素原子がフッ素原子で置換された炭素数２〜６のアルキレン基を表し；Ｙ、Ｚは、それぞれ独立に、少なくとも１つの水素原子がフッ素原子で置換された炭素数１〜１０のアルキル基を表し；Ｒ^１１〜Ｒ^１３は、それぞれ独立に、アリール基またはアルキル基を表し、Ｒ^１１〜Ｒ^１３のうち少なくとも１つはアリール基を表す］で表される構成単位からなる群から選ばれる少なくとも１種のスルホニウム化合物も好ましい。

[Wherein X represents an alkylene group having 2 to 6 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; Y and Z each independently represents at least one hydrogen atom substituted with a fluorine atom; R ^{11 to} R ¹³ each independently represents an aryl group or an alkyl group, and at least one of R ^{11 to} R ¹³ represents an aryl group]. Also preferred are at least one sulfonium compound selected from the group consisting of:

In the formulas (b-1) and (b-2), X is a linear or branched alkylene group in which at least one hydrogen atom is substituted with a fluorine atom, and the alkylene group has, for example, 2 carbon atoms. -6, preferably 3-5, most preferably 3 carbon atoms.
Y and Z are each independently a linear or branched alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, and the alkyl group has, for example, 1 to 10 carbon atoms, preferably 1 -7, more preferably 1-3.
The smaller the number of carbon atoms of the alkylene group of X or the number of carbon atoms of the alkyl groups of Y and Z, the better the solubility in the resist solvent, which is preferable.
In addition, in the alkylene group of X or the alkyl group of Y and Z, the greater the number of hydrogen atoms substituted by fluorine atoms, the stronger the acid, and the transparency to high energy light and electron beams of 200 nm or less Is preferable. The proportion of fluorine atoms in the alkylene group or alkyl group, that is, the fluorination rate is preferably 70 to 100%, more preferably 90 to 100%, and most preferably all hydrogen atoms are substituted with fluorine atoms. A perfluoroalkylene group or a perfluoroalkyl group.

R ^{11 to} R ¹³ each independently represents an aryl group or an alkyl group.
At least one of R ^{11 to} R ¹³ represents an aryl group. Of R ^{11 to} R ¹³ , two or more are preferably aryl groups, and most preferably all of R ^{11 to} R ¹³ are aryl groups.
There is no restriction | limiting in particular as an aryl group of R < ¹¹ > -R < ¹³ >, For example, it is a C6-C20 aryl group, Comprising: It may be substituted by the alkyl group, the alkoxy group, the halogen atom, etc. Good phenyl group and naphthyl group can be mentioned. An aryl group having 6 to 10 carbon atoms is preferable because it can be synthesized at low cost.
The alkyl group of R ¹¹ to R ^13, not particularly limited, for example, a straight, include alkyl groups such as branched or cyclic. It is preferable that it is C1-C5 from the point which is excellent in resolution. Specific examples include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, an n-pentyl group, a cyclopentyl group, a hexyl group, a cyclohexyl group, a nonyl group, and a decanyl group. A methyl group is preferable because it is excellent in resolution and can be synthesized at low cost.
Among these, it is most preferable that all of R ^{11 to} R ¹³ are phenyl groups.

  These sulfonium compounds may be used alone or in combination of two or more.

Especially, it is preferable to use the onium salt which uses a fluorinated alkyl sulfonate ion as an anion as (B) component from the reactive point of (A0-0) component and (C) component.
In the positive resist composition described later, an onium salt having a fluorinated alkyl sulfonate ion as an anion is preferably used.
As the component (B), one type of acid generator may be used alone, or two or more types may be used in combination.

  (B) Content of a component is 0.5-30 mass parts with respect to 100 mass parts of (A0-0) component, Preferably it is 1-10 mass parts. By setting it as the said range, pattern formation can fully be performed. Moreover, since a uniform resist solution is obtained and storage stability becomes favorable, it is preferable.

(C) Crosslinking agent component The (C) component is not particularly limited, and is arbitrarily selected from the crosslinking agent components used in the conventionally known chemically amplified negative resist compositions. be able to.

Specifically, for example, 2,3-dihydroxy-5-hydroxymethylnorbornane, 2-hydroxy-5,6-bis (hydroxymethyl) norbornane, cyclohexanedimethanol, 3,4,8 (or 9) -trihydroxytri Aliphatic cyclic carbonization having a hydroxyl group or a hydroxyalkyl group or both such as cyclodecane, 2-methyl-2-adamantanol, 1,4-dioxane-2,3-diol, 1,3,5-trihydroxycyclohexane Examples thereof include hydrogen and oxygen-containing derivatives thereof.
In addition, amino group-containing compounds such as melamine, acetoguanamine, benzoguanamine, urea, ethylene urea, glycoluril are reacted with formaldehyde or formaldehyde and a lower alcohol, and the hydrogen atom of the amino group is replaced with a hydroxymethyl group or a lower alkoxymethyl group. Compounds.
Of these, those using melamine are melamine crosslinking agents, those using urea are urea crosslinking agents, those using ethylene urea are ethylene urea crosslinking agents, and those using glycoluril are glycoluril crosslinking agents It is called an agent.
Specific examples include hexamethoxymethylmelamine, bismethoxymethylurea, bismethoxymethylbismethoxyethyleneurea, tetramethoxymethylglycoluril, tetrabutoxymethylglycoluril and the like.

  The component (C) is particularly preferably at least one selected from melamine crosslinking agents, urea crosslinking agents, ethylene urea crosslinking agents, propylene urea crosslinking agents, and glycoluril crosslinking agents. Particularly preferred is a glycoluril-based crosslinking agent.

As the glycoluril-based crosslinking agent, glycoluril substituted at the N-position with a hydroxyalkyl group and / or a lower alkoxyalkyl group which is a crosslinking group is preferable.
More specifically, examples of the glycoluril-based crosslinking agent include mono-, di-, tri- and tetrahydroxymethylated glycolurils, mono-, di-, tri- and / or tetramethoxymethylated glycolurils, mono-, di-, tri- and / or Examples include tetraethoxymethylated glycoluril, mono, di, tri and / or tetrapropoxymethylated glycoluril, mono, di, tri and / or tetrabutoxymethylated glycoluril. "Mono, di, tri and / or tetra ..." indicates that one or more of mono-, di-, tri-, and tetra-forms may be included, particularly A tri- or tetra-isomer is preferred.
Mono, di, tri and / or tetramethoxymethylated glycoluril and mono, di, tri and / or tetrabutoxymethylated glycoluril are also preferred.
From the viewpoint of contrast and resolution, mono, di, tri and / or tetramethoxymethylated glycoluril is most preferable. This crosslinking agent can be obtained, for example, as a commercial product “Mx270” (product name, manufactured by Sanwa Chemical Co., Ltd.). These are mostly tri- and tetra-isomers, and are a mixture of monomers, dimers and trimers.

  (C) The compounding quantity of a component shall be 3-15 mass parts with respect to 100 mass parts of (A0-0) component, Preferably it is 5-10 mass parts. By setting the lower limit value or more, the component (A0-0) can be made insoluble in alkali. By setting the upper limit value or less, it is possible to prevent a decrease in resolution. There is a tendency that the resolution is improved when the addition amount of the crosslinking agent is small.

(D) Nitrogen-containing organic compound In the negative resist composition, a nitrogen-containing organic compound (D) (hereinafter referred to as (D)) is further added as an optional component in order to improve the resist pattern shape, the stability over time. Component)).
Since a wide variety of components (D) have been proposed, any known one may be used, but aliphatic amines, particularly secondary aliphatic amines and tertiary aliphatic amines are preferred. .
Examples of the aliphatic amine include amines (alkyl amines or alkyl alcohol amines) in which at least one hydrogen atom of ammonia NH ₃ is substituted with an alkyl group or hydroxyalkyl group having 12 or less carbon atoms. Specific examples thereof include monoalkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine, n-decylamine; diethylamine, di-n-propylamine, di-n-heptylamine, Dialkylamines such as di-n-octylamine and dicyclohexylamine; trimethylamine, triethylamine, tri-n-propylamine, tri-n-butylamine, tri-n-hexylamine, tri-n-pentylamine, tri-n-heptyl Trialkylamines such as amine, tri-n-octylamine, tri-n-nonylamine, tri-n-decanylamine, tri-n-dodecylamine; diethanolamine, triethanolamine, diisopropanolamine, triisopropanolamine, di-n -Ok Noruamin, alkyl alcohol amines such as tri -n- octanol amine.
These may be used alone or in combination of two or more.
(D) component is normally used in 0.01-5.0 mass parts with respect to 100 mass parts of (A0-0) component. Among these, alkyl alcohol amines and trialkyl amines are preferable, and alkyl alcohol amines are most preferable. Of the alkyl alcohol amines, alkyl alcohol amines such as triethanolamine and triisopropanolamine are most preferred.

(E) component In order to prevent sensitivity deterioration due to the blending with the (D) component, and to improve the resist pattern shape, retention stability, etc., as an optional component, an organic carboxylic acid or an oxo acid of phosphorus or its A derivative (E) (hereinafter referred to as “component (E)”) can be contained. In addition, (D) component and (E) component can also be used together, and any 1 type can also be used.
As the organic carboxylic acid, for example, malonic acid, citric acid, malic acid, succinic acid, benzoic acid, salicylic acid and the like are suitable.
Phosphorus oxoacids or derivatives thereof include phosphoric acid, phosphoric acid di-n-butyl ester, phosphoric acid diphenyl ester and other phosphoric acid or derivatives thereof such as phosphonic acid, phosphonic acid dimethyl ester, phosphonic acid- Like phosphonic acids such as di-n-butyl ester, phenylphosphonic acid, phosphonic acid diphenyl ester, phosphonic acid dibenzyl ester and derivatives thereof, phosphinic acids such as phosphinic acid, phenylphosphinic acid and their esters Among these, phosphonic acid is particularly preferable.
The component (E) is used at a ratio of 0.01 to 5.0 parts by mass per 100 parts by mass of the (A0-0) component.

Other optional components In the negative resist composition, if desired, there are further miscible additives such as an additional resin for improving the performance of the resist film, a surfactant for improving the coating property, and a dissolution inhibitor. Plasticizers, stabilizers, colorants, antihalation agents, dyes, and the like can be added and contained as appropriate.

[Positive resist composition]
In the positive resist composition for forming the second resist layer 12, an organic solvent that does not dissolve the first resist layer 2 is used, as in the second negative resist composition. The explanation of the organic solvent is the same as that of the second negative resist composition.

In the following description of the positive resist composition, the meanings of terms are as follows.
“(Α-Lower alkyl) acrylic acid ester” means one or both of an α-lower alkyl acrylic acid ester such as methacrylic acid ester and an acrylic acid ester. Here, the “α-lower alkyl acrylate ester” means that a hydrogen atom bonded to the α carbon atom of the acrylate ester is substituted with a lower alkyl group.
“Constituent unit” means a monomer unit constituting a polymer.
“A structural unit derived from an acrylate ester” means a structural unit formed by cleavage of an ethylenic double bond of an acrylate ester.
The “structural unit derived from an α-lower alkyl acrylate ester” means a structural unit formed by cleavage of an ethylenic double bond of an α-lower alkyl acrylate ester.
The “structural unit derived from (α-lower alkyl) acrylate ester” means a structural unit formed by cleavage of an ethylenic double bond of (α-lower alkyl) acrylate ester.

The positive resist composition is a resist composition containing (A0 ′) a resin component whose alkali solubility is increased by the action of an acid, and (B) an acid generator component that generates an acid upon exposure,
The component (A0 ′) is preferably a resin component containing a structural unit derived from (A ′) (α-lower alkyl) acrylate ester and having increased alkali solubility by the action of an acid.
Furthermore, the component (A ′) includes a structural unit (a1 ′) derived from an (α-lower alkyl) acrylate ester containing an acid dissociable, dissolution inhibiting group, and a polar group-containing polycyclic group (α It is preferable to have a structural unit (a3 ′) derived from -lower alkyl) acrylic acid ester.

・ Structural unit (a1 ′)
In the structural unit (a1 ′), a hydrogen atom or a lower alkyl group is bonded to the α carbon atom.
The lower alkyl group is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and includes a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, and pentyl. Group, isopentyl group, neopentyl group and the like. Industrially, a methyl group is preferable.
Of these, a hydrogen atom or a methyl group is preferred.

The acid dissociable, dissolution inhibiting group of the structural unit (a1 ′) has an alkali dissolution inhibiting property that makes the entire component (A ′) before exposure insoluble in alkali, and at the same time, an acid generated from the acid generator (B) after exposure. It is a group that dissociates by the action of and changes the entire component (A ′) to alkali-soluble.
As the acid dissociable, dissolution inhibiting group, for example, a resin for resist composition of ArF excimer laser can be appropriately selected from those proposed in large numbers. In general, a group that forms a cyclic or chain tertiary alkyl ester with a carboxy group of acrylic acid and a group that forms a cyclic or chain alkoxyalkyl are widely known.

The cyclic or chain alkoxyalkyl ester forms an ester by replacing the hydrogen atom of the carboxy group with an alkoxyalkyl group, and the terminal of the carbonyloxy group (—C (O) —O—) is formed. This shows a structure in which the alkoxyalkyl group is bonded to an oxygen atom, and this alkoxyalkyl ester group is cleaved between the oxygen atom and the alkoxyalkyl group when an acid acts. Examples of such cyclic or chain alkoxyalkyl groups include 1-methoxymethyl group, 1-ethoxyethyl group, 1-isopropoxyethyl, 1-cyclohexyloxyethyl group, 2-adamantoxymethyl group, 1-methyladamant Examples thereof include a xymethyl group and a 4-oxo-2-adamantoxymethyl group.
Examples of the acid dissociable, dissolution inhibiting group that forms a chain-like tertiary alkyl ester include a t-butyl group and a tert-amyl group.
In addition, as the structural unit (a1 ′), a structural unit including a cyclic group, in particular, an “acid dissociable, dissolution inhibiting group containing an alicyclic group” is preferable. The alicyclic group may be monocyclic or polycyclic, and can be appropriately selected and used from among many proposed, for example, ArF resists. Are preferred. The alicyclic group is preferably a hydrocarbon group and is preferably saturated.
Examples of the monocyclic alicyclic group include groups in which one hydrogen atom has been removed from a cycloalkane. Examples of the polycyclic alicyclic group include groups in which one hydrogen atom has been removed from bicycloalkane, tricycloalkane, tetracycloalkane and the like.
Specific examples of the monocyclic group include a cyclopentyl group and a cyclohexyl group. Examples of the polycyclic group include groups in which one hydrogen atom has been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane.
Among these, an adamantyl group obtained by removing one hydrogen atom from adamantane, a norbornyl group obtained by removing one hydrogen atom from norbornane, a tricyclodecanyl group obtained by removing one hydrogen atom from tricyclodecane, and tetracyclo A tetracyclododecanyl group obtained by removing one hydrogen atom from dodecane is preferred industrially.

  More specifically, the structural unit (a1 ′) is preferably at least one selected from the following general formulas (I ′) to (III ′).

［式中、Ｒ^０は水素原子または低級アルキル基であり、Ｒ^２１は低級アルキル基である。］

[Wherein, R ⁰ is a hydrogen atom or a lower alkyl group, and R ²¹ is a lower alkyl group. ]

［式中、Ｒ^０は水素原子または低級アルキル基であり、Ｒ^２２及びＲ^２３はそれぞれ独立に低級アルキル基である。］

[Wherein, R ⁰ is a hydrogen atom or a lower alkyl group, and R ²² and R ²³ are each independently a lower alkyl group. ]

［式中、Ｒ^２４は第３級アルキル基である。］

[Wherein R ²⁴ represents a tertiary alkyl group. ]

R ⁰ is a hydrogen atom or a lower alkyl group. The lower alkyl group is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and includes a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, and pentyl. Group, isopentyl group, neopentyl group and the like. Industrially, a methyl group is preferable. Of these, a hydrogen atom or a methyl group is preferred.
R ²¹ is preferably a lower linear or branched alkyl group having 1 to 5 carbon atoms, and is a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, pentyl group, isopentyl group. And neopentyl group. Among these, a methyl group and an ethyl group are preferable because they are easily available industrially.

R ²² and R ²³ are each independently preferably a linear or branched lower alkyl group having 1 to 5 carbon atoms. Among them, the case where both R ²² and R ²³ are methyl groups is industrially preferable, and specific examples include structural units derived from 2- (1-adamantyl) -2-propyl acrylate.

R ²⁴ is preferably a chain-like tertiary alkyl group or a cyclic tertiary alkyl group. The chain-like tertiary alkyl group is, for example, a tert-butyl group or a tert-amyl group, and the case where it is a tert-butyl group is industrially preferable. The tertiary alkyl group is an alkyl group having a tertiary carbon atom.
The cyclic tertiary alkyl group is the same as that exemplified in the aforementioned “acid dissociable, dissolution inhibiting group containing an alicyclic group”, and includes a 2-methyl-2-adamantyl group, 2-ethyl-2 -Adamantyl group, 2- (1-adamantyl) -2-propyl group, 1-ethylcyclohexyl group, 1-ethylcyclopentyl group, 1-methylcyclohexyl group, 1-methylcyclopentyl group and the like can be mentioned.
The group —COOR ²⁴ may be bonded to the 3 or 4 position of the tetracyclododecanyl group shown in the formula, but the bonding position cannot be specified. Similarly, the carboxy group residue of the acrylate structural unit may be bonded to the position 8 or 9 shown in the formula, but the bonding position cannot be specified.

The structural unit (a1 ′) can be used alone or in combination of two or more.
The structural unit (a1 ′) is 20 to 60 mol%, preferably 30 to 50 mol%, most preferably 35 to 45 mol%, based on the total of all structural units in the component (A ′). preferable. A pattern can be obtained by setting it to the lower limit value or more, and balancing with other structural units can be achieved by setting it to the upper limit value or less.

・ Structural unit (a3 ′)
By the structural unit (a3 ′), the hydrophilicity of the entire component (A ′) is increased, the affinity with the developer is increased, the alkali solubility in the exposed area is improved, and the resolution is improved.
In the structural unit (a3 ′), any of a lower alkyl group and a hydrogen atom may be bonded to the α carbon atom. The lower alkyl group is the same as described above.
Examples of the polar group include a hydroxyl group, a cyano group, a carboxy group, and an amino group, and a hydroxyl group is particularly preferable.
Examples of the polycyclic group include a polycyclic alicyclic hydrocarbon group (polycyclic group). The polycyclic group can be appropriately selected from a large number of polycyclic groups similar to those exemplified in the structural unit (a1 ′).

    The structural unit (a3) is preferably at least one selected from the following general formulas (VIII ′) to (IX ′).

［式中、Ｒ^０は水素原子または低級アルキル基であり、ｎ’は１〜３の整数である。］

[Wherein, R ⁰ is a hydrogen atom or a lower alkyl group, and n ′ is an integer of 1 to 3.] ]

R ⁰ is the same as above.
Among these, those in which n ′ is 1 and the hydroxyl group is bonded to the 3-position of the adamantyl group are preferable.

［式中、Ｒ^０は水素原子または低級アルキル基であり、ｋは１〜３の整数である。］

[Wherein, R ⁰ is a hydrogen atom or a lower alkyl group, and k is an integer of 1 to 3. ]

R ⁰ is the same as above.
Among these, those in which k is 1 are preferable. Moreover, it is preferable that the cyano group is bonded to the 5th or 6th position of the norbornyl group.
In addition, the structural unit (a1) shown in the “alicyclic group having a fluorinated hydroxyalkyl group” of the second negative resist composition can also be used, specifically, the general formula (1 ) Is most preferable from the viewpoint of solubility in alcohol solvents.

The structural unit (a3 ′) can be used alone or in combination of two or more.
The structural unit (a3 ′) is preferably contained in an amount of 10 to 50 mol%, preferably 15 to 40 mol%, based on the total of all structural units constituting the component (A ′), and 20 to 30 mol%. Is most preferred.
Lithographic characteristics are improved by setting the value to the lower limit value or more, and balance with other structural units can be achieved by setting the upper limit value or less.

Other structural units The component (A ′) may contain structural units other than the structural units (a1 ′) and (a3 ′), but preferably the total of these structural units is in the total structural units. It is 70 mol% or more, preferably 80 mol% or more, and most preferably 100 mol%.
As the structural unit other than the structural units (a1 ′) and (a3 ′), “derived from an acrylate ester containing a lactone-containing monocyclic or polycyclic group” shown in the second negative resist composition. And a structural unit (a2 ′) similar to “the structural unit (a4)”.
The description of the structural unit (a2 ′) is the same as the description of the structural unit (a4).
The structural unit (a2 ′) can be used alone or in combination of two or more.
The structural unit (a2 ′) is contained in an amount of 20 to 60 mol%, preferably 20 to 50 mol%, preferably 30 to 45 mol%, based on the total of all the structural units in the component (A ′). Most preferably it is. Lithographic characteristics are improved by setting the value to the lower limit value or more, and balance with other structural units can be achieved by setting the upper limit value or less.

  In addition, a structural unit (a4 ') other than the structural unit (a1'), the structural unit (a3 '), and the structural unit (a2') can also be used. The structural unit (a4 ′) is not particularly limited as long as it is another structural unit that is not classified into the structural units (a1 ′) to (a3 ′).

For example, a structural unit containing a polycyclic alicyclic hydrocarbon group and derived from an (α-lower alkyl) acrylate is preferable. Examples of the polycyclic alicyclic hydrocarbon group include those exemplified in the case of the structural unit (a1 ′), and in particular, tricyclodecanyl group, adamantyl group, tetra It is preferable in terms of industrial availability and the like that it is at least one selected from a cyclododecanyl group, a norbornyl group, and an isobornyl group.
Specific examples of the structural unit (a4 ′) include the following structures (X) to (XII).

（式中、Ｒ^０は水素原子又は低級アルキル基である）
この構成単位は、通常、５位又は６位の結合位置の異性体の混合物として得られる。

(Wherein R ⁰ is a hydrogen atom or a lower alkyl group)
This structural unit is usually obtained as a mixture of isomers at the 5-position or 6-position.

（式中、Ｒ^０は水素原子又は低級アルキル基である）

(Wherein R ⁰ is a hydrogen atom or a lower alkyl group)

（式中、Ｒ^０は水素原子又は低級アルキル基である）

(Wherein R ⁰ is a hydrogen atom or a lower alkyl group)

R ⁰ is the same as above.
When the structural unit (a4 ′) is included, the structural unit (a4 ′) is contained in the component (A ′) in the range of 1 to 25 mol%, preferably 5 to 20 mol%, based on the total of all the structural units. It is preferable.

(A ') A component can be comprised from 1 type, or 2 or more types of resin.
The component (A ′) is obtained, for example, by polymerizing a monomer related to each structural unit by a known radical polymerization using a radical polymerization initiator such as azobisisobutyronitrile (AIBN). Can do.

The weight average molecular weight (polystyrene equivalent weight average molecular weight by gel permeation chromatography, the same shall apply hereinafter) of the component (A ′) is, for example, 30000 or less, preferably 20000 or less, more preferably 12000 or less, Most preferably, it is 10,000 or less.
The lower limit is not particularly limited, but is preferably 4000 or more, and more preferably 5000 or more, from the viewpoint of suppressing pattern collapse and improving resolution.

Moreover, the preferable mass mean molecular weight of (A0 ') component is the same as that of (A') component.
The component (A0 ′) can be used alone or in combination. And (A0 ') component can also use resin other than (A') component.
What is necessary is just to adjust content of (A0 ') component according to the resist film thickness to form.

(B) component It is the same as that of description of a 2nd negative resist composition.

(D) component It is the same as that of description of a 2nd negative resist composition.
(E) component It is the same as that of description of a 2nd negative resist composition.

Other optional components The same as described for the second negative resist composition.

[First negative resist composition]
As the first negative resist composition, for example, the same one as the second negative resist composition can be used. However, in the first negative resist composition, there is no restriction that an organic solvent that does not dissolve the first resist layer 2 is used unlike the second negative resist composition.
Therefore, it is also possible to use an organic solvent other than the alcohol solvent, the fluorine organic solvent, etc. described in the second negative resist composition. However, it is preferable to use an organic solvent used in the second negative resist composition, and it is particularly preferable to use an alcohol-based organic solvent, like the organic solvent of the second negative resist composition. Preferably, isobutanol and / or n-butanol is used.
Examples of the organic solvent other than the alcohol-based solvent and the fluorine-based organic solvent described in the second negative resist composition are those that can dissolve each component to be used to form a uniform solution. Conventionally, one or two or more kinds of known solvents as chemically amplified resists can be appropriately selected and used.
For example, ketones such as γ-butyrolactone, acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone, 2-heptanone, ethylene glycol, ethylene glycol monoacetate, diethylene glycol, diethylene glycol monoacetate, propylene glycol, propylene glycol monoacetate, dipropylene glycol Or dipropylene glycol monoacetate monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether and other polyhydric alcohols and derivatives thereof, cyclic ethers such as dioxane, methyl lactate, lactic acid Ethyl (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methoxy Methyl propionate, esters such as ethyl ethoxypropionate can be exemplified.

Among these, a mixed solvent obtained by mixing propylene glycol monomethyl ether acetate (PGMEA) and a polar solvent is preferable. The blending ratio (mass ratio) may be appropriately determined in consideration of the compatibility between PGMEA and the polar solvent, preferably 1: 9 to 9: 1, more preferably 2: 8 to 8: 2. It is preferable to be within the range.
More specifically, when EL is blended as a polar solvent, the mass ratio of PGMEA: EL is preferably 2: 8 to 8: 2, more preferably 3: 7 to 7: 3.
In addition, as the organic solvent, a mixed solvent of at least one selected from PGMEA and EL and γ-butyrolactone is also preferable. In this case, the mixing ratio of the former and the latter is preferably 70:30 to 95: 5.

  In the resist pattern forming method of the present invention, the second negative resist composition or the positive resist composition dissolved in a specific organic solvent is used as the second resist layer as described above. Thus, in the resist pattern forming method in which a dense pattern is formed in the lower layer and a sparse pattern is formed in the upper layer, mixing can be suppressed, and a resist pattern forming method having a favorable shape can be provided.

[Reference example]
(Adjustment of positive resist composition used for second resist layer)
As a resin component, 100 parts by mass of resin 1 represented by the following chemical formula, 5.0 parts by mass of triphenylsulfonium nonafluorobutane sulfonate as an acid generator, and 0.45 parts by mass of triethanolamine as a nitrogen-containing organic compound A positive resist composition having a solid content concentration of 6% by mass was dissolved in isobutanol as an organic solvent.

樹脂１（質量平均分子量９８００、分散度（質量平均分子量／数平均分子量）１．４、ｌ／ｍ＝／４８／５２（モル比））

Resin 1 (mass average molecular weight 9800, dispersity (mass average molecular weight / number average molecular weight) 1.4, l / m = / 48/52 (molar ratio))

(Adjustment of negative resist composition used for first or second resist layer)
As a resin component, 100 parts by mass of resin 2 represented by the following chemical formula, 2.0 parts by mass of triphenylsulfonium trifluoromethanesulfonate as an acid generator, and 0.1 parts by mass of triethanolamine as a nitrogen-containing organic compound A negative resist composition having a solid content of 6% by mass was dissolved in isobutanol as an organic solvent.

樹脂２（質量平均分子量５４００、分散度（質量平均分子量／数平均分子量）２．０、ｌ／ｍ／ｎ＝５０／１７／３３（モル比））

Resin 2 (mass average molecular weight 5400, dispersity (mass average molecular weight / number average molecular weight) 2.0, l / m / n = 50/17/33 (molar ratio))

[Example 1]
An organic antireflection film composition “ARC-29” (trade name, manufactured by Brewer Science) is applied onto an 8-inch silicon wafer using a spinner, and baked on a hot plate at 215 ° C. for 60 seconds to be dried. Thereby, an organic antireflection film having a thickness of 77 nm was formed.
And after apply | coating the negative resist composition prepared by the reference example using a spinner, it prebaked (PAB) for 60 second at 80 degreeC on the hotplate, and dried, and formed the 200-nm-thick resist layer. . Next, an ArF excimer laser (193 nm) was selectively irradiated through the mask pattern by an ArF exposure apparatus NSR-S302 (Nikon Corp .; NA (numerical aperture) = 0.60, 2/3 annular illumination). . Then, PEB treatment at 100 ° C. for 60 seconds, paddle development with an aqueous 2.38 mass% tetramethylammonium hydroxide solution at 23 ° C. for 60 seconds, and then washing with water for 20 seconds and drying to obtain a 140 nm 1: 1 The dense (dense) contact hole pattern was formed.
Next, the positive resist composition prepared in the above reference example is applied onto the formed dense hole pattern using a spinner, pre-baked (PAB) at 115 ° C. for 60 seconds, and dried. As a result, a 200 nm thick resist layer was formed. At that time, mixing with the underlying resist layer was not generated. Next, ArF excimer laser (193 nm) was selectively irradiated through the mask pattern by an ArF exposure apparatus NSR-S302 (manufactured by Nikon Corporation; NA (numerical aperture) = 0.60, σ = 0.75).
Then, PEB treatment at 100 ° C. for 60 seconds, paddle development with a 2.38 mass% tetramethylammonium hydroxide aqueous solution at 23 ° C. for 60 seconds, followed by washing with water for 20 seconds and drying to a 140 nm 1: 1 dense A dense / dense mixed pattern having both a (dense) contact hole pattern and a sparse pattern with a hole width of 140 nm could be formed.

[Example 2]
An organic antireflection film composition “ARC-29” (trade name, manufactured by Brewer Science) is applied onto an 8-inch silicon wafer using a spinner, and baked on a hot plate at 215 ° C. for 60 seconds to be dried. Thereby, an organic antireflection film having a thickness of 77 nm was formed.
And after apply | coating the negative resist composition prepared by the reference example using a spinner, it prebaked (PAB) for 60 second at 80 degreeC on the hotplate, and dried, and formed the 200-nm-thick resist layer. . Next, an ArF excimer laser (193 nm) was selectively irradiated through the mask pattern by an ArF exposure apparatus NSR-S302 (Nikon Corp .; NA (numerical aperture) = 0.60, 2/3 annular illumination). . Then, PEB treatment at 100 ° C. for 60 seconds, paddle development with an aqueous 2.38 mass% tetramethylammonium hydroxide solution at 23 ° C. for 60 seconds, and then washing with water for 20 seconds and drying to obtain a 140 nm 1: 1 The dense (dense) contact hole pattern was formed.
Next, on the formed dense hole pattern, the negative resist composition prepared in the above Reference Example was applied using a spinner, and then pre-baked (PAB) at 80 ° C. for 60 seconds on a hot plate, and then dried. As a result, a 200 nm thick resist layer was formed. At that time, mixing with the underlying resist layer was not generated. Next, an ArF excimer laser (193 nm) was selectively irradiated through the mask pattern by an ArF exposure apparatus NSR-S302 (Nikon Corp .; NA (numerical aperture) = 0.60, 2/3 annular illumination). . Then, PEB treatment at 100 ° C. for 60 seconds, paddle development with an aqueous 2.38 mass% tetramethylammonium hydroxide solution at 23 ° C. for 60 seconds, and then washing with water for 20 seconds and drying to obtain a 140 nm 1: 1 Thus, a dense and dense contact hole pattern and a sparse and dense mixed pattern having both a sparse pattern with a hole width of 140 nm could be formed.

  Thus, in the example according to the present invention, mixing could be prevented and a practical resist pattern could be formed.

FIG. 1A is an explanatory diagram showing a flow of an example procedure (process 1) of the first aspect, and FIG. 1B is an explanatory diagram showing a flow of an example procedure (process 2) of the second aspect. Figure. Explanatory drawing (sectional drawing) of the process 1. FIG. Explanatory drawing (sectional drawing) of the process 2. FIG. The top view which showed the state after forming a dense pattern and a sparse pattern through the process 1 or 2. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 2 ... 1st resist layer (lower layer), 2a ... hole, 2a '... exposure part, 12 ... 2nd resist layer (upper layer), 12a ... Hole, 12a '... exposed part, 3, 13 ... mask, 2b ... unexposed part, 12b ... unexposed part

Claims (8)

Steps (i) to (ii) below (i) A step of forming a first resist layer on a substrate using a first negative resist composition and selectively exposing to form a dense pattern ( ii) forming a second resist layer on the first resist layer using a second negative resist composition or a positive resist composition, and selectively exposing the first resist layer; A method for forming a resist pattern, comprising: simultaneously developing a second resist layer to expose a part of an unexposed portion of the first resist layer,
A resist pattern comprising a negative resist composition or a positive resist composition dissolved in an organic solvent that does not dissolve the first resist layer as the second negative resist composition or the positive resist composition. Forming method. Steps (i ′) to (ii ′) below (i ′) A first resist layer is formed on a substrate using a negative resist composition, selectively exposed, developed, and then developed. Forming a dense pattern on the resist layer (ii ′) forming a second resist layer on the dense pattern of the first resist layer using a second negative resist composition or a positive resist composition; A resist pattern forming method including a step of selectively exposing and developing to embed a part of the dense pattern,
A resist pattern comprising a negative resist composition or a positive resist composition dissolved in an organic solvent that does not dissolve the first resist layer as the second negative resist composition or the positive resist composition. Forming method.   3. The method of forming a resist pattern according to claim 1, wherein the organic solvent that does not dissolve the first resist layer includes an alcohol solvent.   4. The method of forming a resist pattern according to claim 3, wherein the alcohol solvent is isobutanol and / or n-butanol. In the formation method of the resist pattern as described in any one of Claims 1-4,
One or both of the first negative resist composition and the second negative resist composition are (A0-0) an alkali-soluble resin, (B) an acid generator component that generates an acid upon exposure, and (C). A method for forming a resist pattern, which is a negative resist composition containing a crosslinking agent component.   The resist pattern forming method according to claim 5, wherein the (A0-0) component is a resin component containing (A0) at least a fluorinated hydroxyalkyl group and an alicyclic group.   The component (A0) is a structural unit (a1) containing (A) an alicyclic group having a fluorinated hydroxyalkyl group and a structural unit derived from an acrylate ester, the hydroxyl group-containing alicyclic ring The resist pattern forming method according to claim 6, which is a resin component having a structural unit (a2) containing a formula group. In the formation method of the resist pattern as described in any one of Claims 1-7,
The positive resist composition comprises (A ′) a resin component containing a structural unit derived from (α-lower alkyl) acrylic acid ester and having increased alkali solubility by the action of an acid; and (B) exposure. A method for forming a resist pattern, which is a positive resist composition containing an acid generator component that generates an acid.

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