JP2000147537A - Reflective liquid crystal display device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a reflective liquid crystal display device which has an excellent display function and can be manufactured with a simplified process. SOLUTION: The reflective liquid crystal display device comprises a liquid crystal layer 14 interposed between an insulating substrate 11 having an active matrix driving element 5 and a reflection plate 12 with a rugged surface and an insulating substrate 1 having a transparent electrode 4. In this case, a layer having the rugged surface 30 located at the lower part of the reflection plate 12 consists of an assembly of particles formed on a conductive film 29 with an electrolytic film forming method.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a reflection type liquid crystal display device and a method for manufacturing the same.

[0002]

2. Description of the Related Art A reflection type liquid crystal display device is used as a display device for a portable terminal. In this liquid crystal display device, light incident from the outside is reflected by a reflector located inside the liquid crystal display device, and the reflected light is used as a display light source, thereby eliminating the need for a backlight in the light source. As a result, the reflective liquid crystal display device is an effective method that can achieve lower power consumption, thinner, and lighter weight than the transmissive liquid crystal display device.

The basic structure of a current reflection type liquid crystal display device is as follows.
A liquid crystal using a TN (twisted nematic) method, a single polarizing plate method, an STN (super twisted nematic) method, a GH (guest host) method, a PDLC (polymer dispersion) method, a cholesteric method, and the like. And a reflector provided inside or outside the liquid crystal cell.

These reflection type liquid crystal display devices employ an active matrix driving method which uses a thin film transistor or a metal / insulating film / metal structure diode as a switching element and can realize high definition and high image quality. Is attached. FIG. 27 shows a specific example of the structure of a reflective liquid crystal display device.

[0005] The opposing substrate 1 comprises a glass substrate 2, a color filter 3 and a transparent electrode 4. The lower substrate 11 includes an inverted staggered thin film transistor 6 as an active matrix driving element 5 formed on a glass substrate 2, an organic film 10 as an interlayer insulating film 9 formed thereon, and a drain electrode 22 of the thin film transistor. , And the reflection plate 12 and the reflection electrode plate 24 having a function as a pixel electrode. A GH liquid crystal 14 is located between the opposing substrate and the lower substrate as a liquid crystal layer. As a light source of the liquid crystal display device, reflected light 16 is used, in which incident light 15 from the outside passes through a glass substrate on the opposite side, a color filter, a transparent electrode, and a liquid crystal layer and is reflected by a reflective electrode plate.

The display performance of the reflection type liquid crystal display device includes:
In the case of a liquid crystal transmission state, it is required to present a bright and white display. In order to achieve this display performance, it is necessary to efficiently emit incident light from various directions to the front of the liquid crystal display device. Therefore, the unevenness is formed on the surface of the organic film to form the unevenness on the surface of the reflector, and the control of the unevenness on the surface of the reflector is important in determining the display performance.

FIG. 28 is an explanatory view of a manufacturing process of a conventional reflection type liquid crystal display device. The transistor manufacturing process of this liquid crystal display device includes forming a gate electrode 17, forming an insulating film 18, a semiconductor layer 19, a doping layer 20, forming an island, forming a source electrode 21 and a drain electrode 22 on the glass substrate 2. Thereafter, as a manufacturing process of the reflective pixel electrode, formation of the insulating film 18, formation of the unevenness 25 in the reflective plate formation region, formation of the contact hole 23, and formation of the reflective pixel electrode 24 are added. As a method of forming the irregularities, a method of performing patterning on an organic insulating film is known. These methods are described in JP-B-61-639.
No. 0 publication and Proceedings of S.I.D. (Tohru Koizumi and Tatsuo Uchida, Proceedings o
f the SID, Vol. 29, 157, 1988).

[0008]

However, conventionally, in order to manufacture a reflective liquid crystal display device which is bright and has high quality display,
It is required to form a high-performance switching element and a high-performance reflector on the same insulating substrate, and in addition to the process of manufacturing the switching element, forming irregularities for scattering light on the surface of the reflector. Since a process is added,
The manufacturing cost of the reflection type liquid crystal display device is increased, and therefore the unit cost of the panel is increased. In addition, since the shape of the unevenness of the reflector greatly affects the brightness of the reflective liquid crystal display device, controllability of the unevenness structure is also required for the unevenness forming process.

In view of the above circumstances, a high-brightness reflective liquid crystal display is realized by realizing high brightness and high-quality display performance of a reflection type liquid crystal display device and reducing manufacturing costs by reducing the number of manufacturing steps. It is desired to provide the device at a low price. Accordingly, an object of the present invention is to provide a reflective liquid crystal display device having a good display function and capable of being manufactured in a simplified process, and a method of manufacturing the same.

[0010]

In order to achieve the above object, the present invention provides a reflective liquid crystal display device shown in the following (1) to (4) and a reflective liquid crystal display device shown in the following (5) and (6). An apparatus manufacturing method is provided.

(1) In a reflection type liquid crystal display device having a structure in which a liquid crystal layer is sandwiched between an insulating substrate having an active matrix driving element and a reflective plate having an uneven surface, and an insulating substrate having a transparent electrode, A reflection type liquid crystal display device, wherein the uneven layer located under the reflector is formed of an aggregate of particles formed on a conductive film by an electrolytic deposition method.

(2) In a reflection type liquid crystal display device having a structure in which a liquid crystal layer is sandwiched between an insulating substrate having an active matrix driving element and a reflecting plate having an uneven surface, and an insulating substrate having a transparent electrode, The uneven layer located at the lower part of the reflection plate has unevenness formed of an aggregate of particles formed on a conductive film by an electrolytic film forming method, and an organic insulating film or an inorganic based film formed so as to cover the unevenness. A reflective liquid crystal display device comprising: an insulating film.

(3) The reflective liquid crystal display device according to (2), wherein the particles constituting the uneven layer are composed of a mixture of transparent particles and conductive particles.

(4) The reflection type liquid crystal display device according to (2) or (3), wherein a part of the concavo-convex layer formed below the reflector has a function as a parallel capacitance with respect to the liquid crystal pixel capacitance. .

(5) Manufacture of a reflection type liquid crystal display device having a structure in which a liquid crystal layer is sandwiched between an insulating substrate having an active matrix driving element and a reflecting plate having an uneven surface, and an insulating substrate having a transparent electrode. A method for forming a concavo-convex layer located below the reflector, wherein a conductive film formed in a manufacturing process of the active matrix driving element is patterned in a region where concavities and convexities are to be formed in advance. A substrate having electrodes is immersed in a solution containing a polymer resin together with a surfactant, and one of the electrodes immersed in the solution and an electrode for driving the liquid crystal are connected to an electrode for driving the liquid crystal. A DC power source is connected so that current flows between the two electrodes, thereby depositing particles made of a polymer resin in a solution on the electrodes for driving the liquid crystal, and forming an uneven layer. Method of manufacturing a reflection type liquid crystal display device, and forming.

(6) Manufacture of a reflection type liquid crystal display device having a structure in which a liquid crystal layer is sandwiched between an insulating substrate having an active matrix driving element and a reflecting plate having an uneven surface, and an insulating substrate having a transparent electrode. A method for forming a concavo-convex layer located below the reflector, wherein a conductive film formed in a manufacturing process of the active matrix driving element is patterned in a region where concavities and convexities are to be formed in advance. A substrate having electrodes is immersed in a solution containing particles made of a polymer resin and particles made of a conductive material together with a surfactant, and one electrode immersed in this solution, and an electrode that drives the liquid crystal. Then, a DC power source is connected so that the electrode for driving the liquid crystal becomes an anode, and a current is passed between the two electrodes, so that a high voltage in the solution is placed on the electrode for driving the liquid crystal. Depositing the particles consisting of particles and conductive material made from the child resin, the manufacturing method of the reflection-type liquid crystal display device characterized by forming the uneven layer.

One example of the reflection type liquid crystal display device according to the present invention comprises, as described above, a first substrate having an insulating substrate and a light reflection plate having a scattering function provided thereon, and a transparent electrode. A second substrate opposed to the first substrate, a liquid crystal layer accommodated between the two substrates, and a light reflection plate formed on an insulating substrate of the first substrate and electrically connected to the light reflection plate via a source electrode or a drain electrode. An active matrix driving type reflection type liquid crystal display device comprising a thin film transistor functioning as an active matrix driving element, the first liquid crystal display device comprising:
The reflecting plate provided on the substrate is provided with irregularities, and the irregularities are characterized by being composed of an aggregate of particles formed by an electrolytic method.

In the formation of the irregularities, a substrate having an electrode for forming irregularities which has been patterned in advance in a region where irregularities are to be formed is immersed in a solution containing particles of a polymer resin together with a surfactant. By connecting a DC power supply to one electrode immersed in the solution and an electrode for driving the liquid crystal so that the electrode for driving the liquid crystal becomes an anode, and passing a current between the two electrodes, Particles made of a polymer resin in a solution can be deposited on the electrode for driving the liquid crystal, and thus, a concavo-convex layer can be formed by electrolytic film formation. Therefore, in the formation of the concavo-convex layer, the patterning step by the resist process for the organic film and the etching step, which are performed in the conventional reflection type liquid crystal display device, can be omitted, and the number of manufacturing steps can be reduced.

Further, another example of the reflection type liquid crystal display device of the present invention comprises, as described above, an insulating substrate having an active matrix driving element and a reflector having an uneven surface, and an insulating substrate having a transparent electrode. In a reflective liquid crystal display device having a structure in which a liquid crystal layer is sandwiched between a substrate and a substrate, the unevenness positioned at the lower portion of the reflector is formed to cover the unevenness formed by an aggregate of particles formed on the conductive film and the upper portion thereof. And an organic insulating film or an inorganic insulating film formed on the substrate. In this reflective liquid crystal display device, it is possible to finally obtain a smooth uneven surface by forming an insulating film on the unevenness formed of the aggregate of particles, and furthermore, the reflective plate and the switching element, wiring, etc. Since a separated structure can be adopted, the area of the reflector can be maximized, so that a brighter reflector, that is, a high-brightness reflective liquid crystal display device can be obtained.

In the reflection type liquid crystal display device of the present invention,
Particles constituting the concave and convex portions under the reflector may be composed of a mixture of transparent particles and conductive particles, whereby a part of the concave and convex portions formed under the reflector is less than the liquid crystal pixel capacitance. It can have a function as a parallel capacitance. That is, by forming the particles constituting the irregularities on the lower portion of the reflection plate as a mixture of the transparent particles and the conductive particles, the irregularities become the conductive layer, and the organic insulating film or the inorganic insulating film located on the upper portion thereof. By stacking the reflector pixel, a capacitor is formed in a part of the protrusion, and by connecting this to a capacitance line, a function as a parallel capacitance with the liquid crystal pixel can be provided. .

Further, in the method of manufacturing a reflection type liquid crystal display device according to the present invention, a liquid crystal layer is formed by an insulating substrate having an active matrix driving element and a reflector having an uneven surface, and an insulating substrate having a transparent electrode. In the manufacture of a reflection type liquid crystal display device having a structure sandwiching the above, in forming the unevenness located below the reflector, a film is formed in a manufacturing process of the active matrix driving element in a reflector region where the unevenness is to be formed in advance. A substrate having an electrode for forming concavo-convex formed by patterning a conductive film is immersed in a solution containing a polymer resin together with a surfactant, and one electrode immersed in this solution and an electrode for driving liquid crystal A DC power supply is connected so that the electrode for driving the liquid crystal becomes an anode,
By passing a current between the two electrodes, polymer resin particles in a solution or a mixture of polymer resin particles and conductive particles are deposited on the electrodes for driving the liquid crystal, thereby forming an uneven layer. And

Therefore, at the same time as forming the pattern of the conductive film at the time of forming the active matrix driving element which has been performed in the conventional reflection type liquid crystal display device, the pattern for unevenness is arranged in the region where the unevenness of the reflector is to be formed. This makes it possible to simplify the formation of the concavo-convex pattern, and furthermore, it is possible to selectively form the concavo-convex structure thereon, so that it is not necessary to perform a resist step and an etching step on the concavo-convex structure film, thereby reducing the number of manufacturing steps. It is possible.

The uneven layer included in the reflective liquid crystal display device of the present invention is obtained by immersing a substrate having an electrode for forming unevenness formed by patterning a conductive film in a solution containing a polymer resin together with a surfactant. One electrode immersed in the solution and the electrode for driving the liquid crystal were connected to a DC power source such that the electrode for driving the liquid crystal became an anode, and a current was passed between the two electrodes. After forming irregularities formed by depositing a particulate polymer resin in a solution on an electrode for driving the liquid crystal, by further applying a heat treatment to melt the irregularities, the irregular surface is changed into a smooth shape. Is also good.
Thereby, any of a reflector having a reflector electrode formed on the top of the unevenness, and a reflector having a reflector electrode formed thereon by covering the unevenness with an organic insulating film or an inorganic insulating film. In addition, a reflection plate having better reflection performance can be realized, and a reflection type liquid crystal display device having a bright display can be manufactured.

[0024]

Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) FIG. 1 shows an example of an embodiment of a liquid crystal display device according to the present invention. The reflection type liquid crystal display device of the present embodiment comprises a lower substrate 11 and a counter substrate 1 which oppose each other.
And a liquid crystal layer provided between both substrates, for example, GH liquid crystal 1
4 is provided. The lower substrate includes an insulating substrate 2, an active matrix driving element 5 formed on the insulating substrate, and a conductive electrode 29 at a predetermined position on the insulating substrate.
And a protruding portion 30 (convex portion) located on the upper portion thereof, and a reflecting electrode plate 12 (reflecting plate) formed of a metal with high reflection efficiency formed so as to cover the protruding portion. The active matrix driving element is a forward staggered thin film transistor 28 including a source electrode, a drain electrode, a semiconductor layer, a doping layer, and an insulating layer and a metal layer thereover.

First, the operation of the reflection type liquid crystal display device of the present invention will be described. When the reflective liquid crystal display device is in the transmission state, the incident light 15 incident from the outside of the opposing substrate is G
The reflected light 16 that has passed through the H liquid crystal layer 14 and is reflected according to the directivity reflecting the surface unevenness of the reflector, and has again passed through the liquid crystal layer is observed from outside the opposing substrate. On the other hand, when the reflective liquid crystal display device is in a light-shielded state, the incident light incident from the outside of the opposing substrate is absorbed by the GH liquid crystal before reaching the reflective electrode plate, and the light is not emitted to the outside from the opposing substrate. . This enables the light ON / OFF operation.

FIG. 2 shows a process for forming a projection composed of a granular aggregate, and FIG. 3 shows an electrolytic film forming apparatus. A conductive film is formed on the surface of the substrate 2 such as glass, and is patterned to form an electrode 29 for forming projections and depressions at positions where projections (projections and depressions) are to be arranged (FIG. 2A). . As shown in FIG. 3, this substrate 2 is immersed in a solution containing particles 31 made of a polymer resin together with a surfactant 36, and another electrode 35 immersed in the same solution as the electrode 29 on the substrate surface.
And a voltage (DC power supply 37) is applied between them to deposit polymer resin particles in the solution on the electrodes on the substrate surface,
Irregularities 32 are formed by deposits of the particles only on the concave-convex forming electrode pattern (FIG. 2B). At this time, the film thickness 34 of the projection having the convex structure can be easily controlled by changing the voltage or time applied to the electrode. Thereafter, in order to increase the adhesion of the particles deposited at a desired position, the organic resin 33 is infiltrated into the deposited film and then baked to solidify the particles, thereby forming the projections 32.
Is obtained (FIG. 2 (c)). And in this embodiment,
The unevenness forming process is performed in a manufacturing process of the active matrix switching element.

Considering the directivity of reflected light, the height of the projections 32 may be in the range of about 0.3 μm to 4 μm, and the pitch may be in the range of about 2 μm to 20 μm. Further, the projections may be irregularly arranged on a plane, and the planar shape of the projections may be an island pattern or a linear pattern. What is necessary is that the layout is such that a direct current can be applied via a suitable conductive electrode.

As another example of the embodiment, heat treatment may be performed after the formation of the protrusions to change the shape of the protrusions and recesses, so that the protrusions and recesses below the reflector may be used. FIG. 4 shows the heat treatment step. 4A to 4C are processed under the same conditions as in the manufacturing process shown in FIG. 2, and after forming the projections 32, they are melted by heat treatment to convert the shape into a smooth uneven shape 38. Let it. By changing the baking temperature and baking time at this time, the melting state of the projection changes, and therefore, the finally formed unevenness can be controlled by the melting condition. In the baking step, the particles constituting the irregularities may be fused to form a film.

FIG. 5 shows an example of an unevenness manufacturing process according to another embodiment. In the unevenness formation of the present invention, by arranging the pattern of the unevenness forming electrodes 29 shown in FIG. 5 at a narrow pitch or optimizing the film forming time, the polymer resin particles 31 deposited by the electrolytic method can be made high. A continuous concavo-convex structure that is deposited not only in the vertical direction but also in the horizontal direction and is fused 39 with the adjacent convex portion 32 may be used for the reflector (FIG. 5D). Further, a material converted into a smoother uneven shape 38 by melting the unevenness by a heat treatment may be used (FIG. 5E). The smoothness of these uneven surfaces may be selected according to the purpose in order to obtain a desired directivity of the reflection type liquid crystal display device.

Further, as another embodiment of the present invention,
Other elements may be used for the active matrix driving element of the liquid crystal display device. FIG. 6A shows a cross section of the substrate on the reflector side when the inverted staggered thin film transistor 42 is used as another switching element.
FIG. 6B shows a cross section of the substrate on the side of the reflection plate in the case of using.

In this embodiment, the GH mode is used for the liquid crystal mode of the reflection type liquid crystal display device. However, the present invention is not limited to this. As another example, there is a single-polarizer type. FIG. 7 shows an embodiment of a reflection type liquid crystal display device of a single polarizing plate type. In this case, the substrate side having the switching element has the same configuration, and the liquid crystal material 14 and the polarizing plate 41 and the phase difference plate 40 on the opposing substrate side are added as a new configuration.

(Embodiment 2) FIG. 8 shows an embodiment of a liquid crystal display device according to the present invention. The reflection type liquid crystal display device of this embodiment includes a lower substrate 50 and a counter substrate 51 facing each other, and a liquid crystal layer 52 provided between the two substrates, for example, a GH liquid crystal.

The lower substrate includes an insulating substrate 53 and an active matrix driving element 54 formed on the insulating substrate.
And a conductive electrode 55 at a predetermined position on the insulating substrate.
And a projection (convex portion) 56 located on the upper portion thereof, an organic insulating film or an inorganic insulating film 57 formed so as to cover the projection portion and the active matrix driving element, and a high portion formed on the upper portion. Reflection electrode plate 58 made of reflection efficiency metal
(Reflection plate). Further, the reflective electrode plate is electrically connected to the source electrode 59 of the switching element via the contact hole 60, and has both functions as a reflective plate and a pixel electrode in the present embodiment.

In this embodiment, as shown in FIG. 9, the insulating film 57 is inserted between the projection 56 made of an aggregate of particles and the reflector as in the first embodiment. As a result, the uneven surface of the reflector surface is formed of a smooth surface, and the reflector can be arranged at the top of the pixel, so that the reflector area can be maximized, and as a result, brighter reflection can be achieved. A plate can be arranged and a high-brightness reflective liquid crystal display device can be provided.

In this embodiment, the active matrix driving element also includes a source electrode, a drain electrode,
Although a thin film transistor having a forward staggered structure including a semiconductor layer, a doping layer, and an insulating layer and a metal layer thereover is used, the invention is not limited thereto. Similar to the first embodiment, the same effect can be expected with a thin film transistor or an MIM diode having an inverted stagger structure. Also in the present embodiment, the liquid crystal mode is not limited to the GH mode, and the present embodiment is similarly applied to other liquid crystal modes such as a single-polarizer mode and a TN mode.

Further, as shown in FIGS. 10 to 12, when the unevenness formed by electrolytic deposition is converted into a smooth convex shape 61 by hot melt, or when the uneven shape 62 in which adjacent convex portions 56 are fused with the deposited particles is formed. In this case, the present embodiment can be similarly applied. As an embodiment in which these concavo-convex structures are applied to a reflection plate of a reflection-type liquid crystal display device, a fused convex structure 6 is used.
11 is shown in FIG. 11, and the case of using the continuous uneven structure 62 by fusing the adjacent convex portions 56 is shown in FIG. Even when these are used, a reflective liquid crystal display device having high quality display at low cost can be provided.

(Embodiment 3) FIG. 13 shows an embodiment of a liquid crystal display device according to the present invention. The present embodiment is different from the second embodiment in that the protrusions of the second embodiment are made of a conductive material made of a mixture of the polymer resin particles 63 and the conductive particles 64. The configuration is the same as that of the second embodiment. FIG. 14 is a plan view of a pixel showing an example of the present embodiment. FIG. 15 shows an electrolytic film forming apparatus for forming a conductive convex portion.

By providing the protrusions 67 with a conductive property, a part of the unevenness is formed by the structure of the storage capacitor line 69 / conductive protrusion 67 / organic or inorganic insulating film 66 / reflective pixel electrode 65. This can be used as the storage capacity 69. In the present embodiment, by providing a function as a storage capacitor to a part of the concave and convex portions of the reflector, the liquid crystal and the parallel capacitor for holding the writing applied voltage from the data line of the reflection type liquid crystal display device until the next writing. 66 can be obtained without additional manufacturing steps.

The method for forming the concavo-convex film having conductivity is as follows.
A substrate having an electrode 69 for forming concavo-convex formed by patterning a conductive film is immersed in a solution containing polymer resin particles 63 and conductive particles 64 together with a surfactant, and one electrode 76 immersed in this solution is used. A DC power supply 77 is connected to the electrode 69 for driving the liquid crystal, and the electrode 69 for driving the liquid crystal is connected to the electrode 69 for driving the liquid crystal. The polymer resin particles 63 and the conductive particles 64 in the solution are deposited on the substrate to form a concavo-convex layer having conductive performance.

The conductive particles include ITO,
Examples include conductive oxides such as SnO ₂ and ZnO, and metals such as Ag and Al. In particular, when deposition is performed using the present electrolytic method, the former conductive oxide is suitable. Also,
At this time, the planar shape of the unevenness forming electrode is not limited to the shape shown in FIG. As other examples, the electrode shape may be a circle shape shown in the pixel plan view of FIG. 16 or a line shape shown in the pixel plan view of FIG.
For example, the shape may be an elliptical shape, a polygonal shape, or the like. In these figures, 70 is a gate line, 71 is a drain line, 7
Reference numeral 2 denotes a contact hole, 73 denotes a projection, and 74 denotes a reflective pixel electrode plate.

(Embodiment 4) FIG. 18 shows an embodiment of a reflection type liquid crystal display device according to the present invention. This figure explains a manufacturing process on the switching element substrate side of the liquid crystal display device of the present embodiment. In the present embodiment, a case will be described in which a forward staggered thin film transistor 95 is applied as a switching element.

The manufacturing process of the TFT substrate structure in the present embodiment includes (a) electrode formation, (b) source electrode formation 81, drain electrode formation 80, and pattern formation 8 of unevenness forming electrodes.
2. (c) Doping layer formation 83, semiconductor layer formation 84,
Gate insulating layer formation 85, gate electrode film formation, resist layer formation, (d) gate electrode pattern formation 88, (e) island formation 89, (f) uneven electrolytic formation 90, (g) organic or inorganic insulation Each step includes film formation 91, (h) contact pattern formation 93, and (i) reflection plate pattern formation 94.

In this manufacturing process, (f) uneven electrolytic formation is the same as that shown in the above embodiment. A substrate having an electrode for forming concavo-convex formed by patterning a conductive film,
A DC power source is immersed in a solution containing a polymer resin together with a surfactant, and one of the electrodes immersed in the solution and the electrode for driving the liquid crystal are connected to a DC power source so that the electrode for driving the liquid crystal becomes an anode. Are connected to each other, and a current flows between the two electrodes to deposit a polymer resin in a solution on the electrodes for driving the liquid crystal, thereby forming an uneven layer. At this time, the unevenness can be selectively formed by supplying a current only to the electrode on which the unevenness is to be formed, and the height of the unevenness can be freely controlled by adjusting the current amount and the unevenness forming time.

As described in the second embodiment, in order to form a liquid crystal additional capacitance in the concave and convex portions under the reflector, when a part of the concave and convex portions is made to have conductivity, the electrolytic solution in the concave and convex electrolytic formation is used. What is necessary is just to add conductive particles inside. Therefore, the liquid crystal additional capacitance can be formed without increasing the number of process steps.

According to the present embodiment, it is necessary to carry out a resist coating and peeling step, and an etching step of an organic film or an insulating film, which is an unevenness processing step, which is required in the conventional resist step used in the unevenness forming process. Therefore, the process load can be reduced. Therefore, there is a possibility that a reflection type liquid crystal display device can be realized at a lower cost than a conventional reflection type liquid crystal display device. In addition, by using a photosensitive film as an organic insulating film or an inorganic insulating film used on the top of the unevenness, in the contact forming step (h), direct exposure and development processing can be performed without using a resist step. In this case, the contact can be formed, thereby further simplifying the process. Further, in the present embodiment, by performing a heat treatment after the formation of the unevenness (f), the unevenness film can be melted, and a smoother uneven surface can be formed.

In the embodiments other than this embodiment, the electrodeposition used for the switching element may be used as the electrode pattern for forming the concavities and convexities, so that the concavo-convex forming electrode can be used as the electrode used for the switching element. What is necessary is just to be able to form simultaneously. Therefore, the order of the concavo-convex forming step is not limited to the manufacturing process of the present embodiment, and further, the concavo-convex forming electrode is not limited to the gate electrode, the source / drain electrode, or the like. Is also good. As an example, FIG. 19 shows a manufacturing process in the case where the order of the uneven electrolytic formation process is changed.

On the other hand, in the present embodiment, the forward staggered thin film transistor is applied to the switching element. However, in the present embodiment, the inverted staggered thin film transistor and the MIM diode can be applied, and the electrode used for the switching element can be used. It is only necessary that the electrode material can be simultaneously used to form the concavo-convex forming electrode at the time of formation, and the same can be realized by introducing an electrolytic film-forming step in the subsequent steps.

[0048]

Embodiments of the present invention will be described below with reference to the drawings. Embodiment 1 FIG. 20 shows a manufacturing process of a reflection type liquid crystal display device used in an embodiment of the present invention. A thin film transistor having a forward stagger structure was employed as a switching element in the present reflection type liquid crystal display device.

In the production, the following steps were performed on a glass substrate. (A) 50 nm of ITO is formed by a sputtering method. (B) Formation of source electrode 112, drain electrode 111, and electrode pattern 113 for forming unevenness (1PR). (C) The doping layer 114 has a thickness of 100 nm and the semiconductor layer 11 has
5 was formed by plasma CVD and the gate insulating film 116 was formed by plasma CVD. (D) Cr 117 is formed to a thickness of 50 nm by a sputtering method. (E) Formation of gate electrode and TFT element portion island 118 (2PR). (F) Formation of unevenness 119 (2 μm). (G) Aluminum 120 was sputtered by sputtering.
00 nm formation. (H) Formation of the reflective pixel electrode plate 121 (3PR).

In the above step (c), a laminated film of a silicon oxide film and a silicon nitride film is used for the gate insulating film 116, an amorphous silicon film is used for the semiconductor layer 115, and an n-type amorphous silicon film is used for the doping layer 114. The plasma CVD conditions used were set as shown below. In the case of a silicon oxide film, silane and oxygen gas are used as reaction gases, and a gas flow ratio (silane / oxygen) is 0.1%.
Set to about 1-0.5, film formation temperature 200-300 ° C,
The pressure was 1 Torr, and the plasma power was 200 W. In the case of a silicon nitride film, silane and ammonia gas are used as reaction gases, and the gas flow ratio (silane / ammonia) is 0.1 to
0.8, deposition temperature 250 ° C, pressure 1 Torr,
The plasma power was set to 200W. In the case of an amorphous silicon film, silane and hydrogen gas are used as reaction gases, the gas flow ratio (silane / hydrogen) is set to 0.25 to 2, the film formation temperature is 200 to 250 ° C., the pressure is 1 Torr, and the plasma power is 50 W. . In the case of an n-type amorphous silicon film,
Silane and phosphine were used as reaction gases, the gas flow ratio (silane / phosphine) was set to 1-2, and the film formation temperature was 20
0-250 ° C, pressure 1 Torr, plasma power 50W
And

In the formation of the island 118 of the TFT element portion in the above step (e), wet etching was adopted for the Cr layer, and dry etching was adopted for the silicon oxide film, silicon nitride film and amorphous silicon layer. For the etching of the Cr layer, a mixed aqueous solution of perchloric acid and ceric ammonium nitrate was used. In etching a silicon nitride film and a silicon oxide film, fluorine tetrachloride and oxygen gas are used as an etching gas, and a reaction pressure is 5 to 300 mTorr.
r, the plasma power was 100 to 300 W. In etching the amorphous silicon layer, chlorine and hydrogen gas were used, the reaction pressure was 5 to 300 mTorr, and the plasma power was 50 to 200 W. In the photolithography process, a normal resist process was used.

In this embodiment, ITO is used for the source and drain electrodes, and Cr metal is used for the gate electrode. However, the material of each electrode is not limited to these. Other electrode materials include Ti, W, Mo, Ta, Cu, Al, Ag, and IT.
A single layer film of O, ZnO, SnO, or the like, or a stacked film of a combination thereof may be employed.

In the present embodiment, the unevenness formed below the reflector is formed in the step (f). The forming method at this time will be described. In the step (b), when forming the source and drain electrodes of the active matrix switching element (in this embodiment, a thin film transistor having a staggered structure is used), at the same time, an electrode for forming unevenness for forming unevenness under the reflector is also patterned. Perform formation.

As shown in the electrolytic film forming apparatus shown in FIG. 3 of the first embodiment and FIG. 15 of the second embodiment, this substrate was immersed in a solution containing particles made of a polymer resin.
A voltage is applied between the electrode on the substrate surface and another electrode immersed in the same solution, and polymer resin particles in the solution are deposited on the electrode on the substrate surface. As a result, irregularities were formed only on the underlying irregularity-forming electrode pattern due to the deposits of the particles.

At this time, the thickness of the projection having the convex structure can be easily controlled by changing the voltage applied to the electrode and the time. Thereafter, in order to increase the adhesion of the particles deposited at a desired position, an organic resin is permeated into the deposited film, and the deposited particles are solidified by baking,
This was used for the unevenness of this example.

In this embodiment, thereafter, the reflection efficiency is high,
Aluminum metal 12 with good compatibility with TFT process
0 was formed, and this was patterned to form the pixel electrode / reflection plate 121. At this time, the aluminum is subjected to a wet etching treatment, and
A mixture of phosphoric acid, acetic acid, and nitric acid heated to 0 ° C. was used.

In the present embodiment, the process of applying, stripping, and etching a resist, which is a mask material for forming a pattern of a concavo-convex structure film, which is conventionally required, is not required as the concavo-convex forming process. Can be
Further, by applying the forward stagger structure to the thin film transistor, the number of PRs in all the steps becomes three, which is a great result in reducing the number of processes as compared with the conventional six.

The maximum height of the irregularities was set to 1.5 μm, and the planar shape of the irregularities was set to a random shape. Thereafter, the TFT substrate and an opposing substrate having a transparent electrode formed of ITO of a transparent conductive film were overlapped so that the respective film surfaces faced each other. In this case, the TFT substrate and the opposing substrate were subjected to an orientation treatment, the two substrates were overlapped via a spacer such as a plastic particle, and then the periphery of the panel was adhered by applying an epoxy-based adhesive. Thereafter, a liquid crystal display device was manufactured by injecting GH type liquid crystal into a liquid crystal layer.

FIG. 21A is a sectional view of a reflection type liquid crystal display device obtained in this embodiment. In FIG. 21A, reference numeral 122 denotes a convex portion, and 125 denotes a TFT portion. The reflective pixel electrode of this reflective liquid crystal display device has a uniform, light scattering good reflection performance, and the display performance of the reflective liquid crystal display device using the same has a brighter white display than newspaper. A monochrome reflective panel was realized at low cost. Further, when the RGB color filters were provided on the opposite substrate side, a bright color reflective panel could be realized at low cost.

The height of the unevenness in this embodiment is not limited to the above value. Since the height of the unevenness can be changed in a wide range, the use of the uneven structure of the present invention can provide a reflective liquid crystal display device in which the directivity of the performance of the reflector is greatly changed.

In this embodiment, immediately after the step (f), heating is performed, for example, at 220 ° C. for one hour to melt the convex pattern, thereby making it possible to create an uneven surface having a smooth upper corner. . Irregularities 12 melted by the heating
FIG. 21B shows a cross section on the TFT substrate side of the reflection type liquid crystal display device manufactured using No.3. By using this uneven surface for the reflector, the scattering performance of the reflector could be further improved, and thus the resulting reflective liquid crystal display device could achieve bright display performance.

Further, in this embodiment, in the uneven film formation in the step (f), the film can be formed until the adjacent protrusions and deposited particles are fused after the deposition to form a continuous uneven structure. FIG. 21C shows a cross section on the TFT substrate side of a reflection type liquid crystal display device manufactured by disposing the continuous uneven portion 124 below the reflection plate. Even when this uneven surface is used as a reflector, a bright reflective liquid crystal display device can be provided at low cost.

Further, in the present embodiment, the step (f) of forming unevenness by electrolytic film formation is changed to be performed immediately after the step (b) of forming an electrode for forming unevenness, that is, FIG. Even when the TFT substrate side of the reflection type liquid crystal display device is manufactured according to the flow of the steps shown, a reflection type liquid crystal display device having good display performance can be provided without increasing the number of process steps, as in the present embodiment. I realized it.

Embodiment 2 FIG. 22 shows a manufacturing process of a reflection type liquid crystal display device used in an embodiment of the present invention. As the switching element in the present reflection type liquid crystal display device, an inverted staggered thin film transistor was employed.

In the production, the following steps were performed on a glass substrate. (A) Cr is formed to a thickness of 50 nm by a sputtering method. (B) Formation of gate electrode 126 (1PR). (C) 400 nm for the gate insulating film 127 and 1 for the semiconductor layer
00 nm, doping layer 128 with 100 nm plasma C
Formed by VD. (D) Island 129 formation (2PR). (E) Each of Cr and ITO layers is formed to a thickness of 50 nm by a sputtering method. (F) Formation of source electrode 132, drain electrode 131, and electrode 130 for forming unevenness (3PR). The unevenness 133 is electrolytically formed. (G) Concavo-convex melt 134. (H) 300n aluminum by sputtering
m formation. (I) Formation of the reflective pixel electrode plate 135 (4PR). (J) Gate line terminal connection (5PR).

In this embodiment, the irregularities formed below the reflector are formed in the above step (g). At this time, the forming method was the same as that in the electrolytic film forming step of the first embodiment. In this embodiment, although the number of steps is increased as compared with the previous embodiment, the total number of PRs is 5, which can be simplified as compared with 6 in the manufacturing process of the conventional reflection type liquid crystal display device.
After the formation of the irregularities, the irregularities were melted by baking at 220 ° C. for one hour in the step (h) to form a smooth irregular surface.

In this example, the reflective pixel electrode plate was manufactured with an aperture ratio of 73%. Thereafter, the TFT substrate and an opposing substrate having a transparent electrode formed of ITO of a transparent conductive film were overlapped so that the respective film surfaces faced each other. In this case, the TFT substrate and the opposing substrate were subjected to an orientation treatment, the two substrates were overlapped via a spacer such as a plastic particle, and then the periphery of the panel was adhered by applying an epoxy-based adhesive. Thereafter, a liquid crystal display device was manufactured by injecting GH type liquid crystal into a liquid crystal layer. Also in the case of the reflection type liquid crystal display device of this embodiment, a bright color reflection type panel was realized at low cost, as in the case of the first embodiment.

Example 3 A process for manufacturing a reflection type liquid crystal display device used in an example of the present invention will be described below (see FIG. 20). A thin film transistor having a forward stagger structure was employed as a switching element in the present reflection type liquid crystal display device.

In the production, the following steps were performed on a glass substrate. (A) 50 nm of ITO is formed by a sputtering method. (B) Formation of source electrode 112, drain electrode 111, and electrode pattern 113 for forming unevenness (1PR). (C) The doping layer 114 has a thickness of 100 nm and the semiconductor layer 11 has
5 was formed by plasma CVD and the gate insulating film 116 was formed by plasma CVD. (D) Cr 117 is formed to a thickness of 50 nm by a sputtering method. (E) Formation of gate electrode and TFT element portion island 118 (2PR). (F) Formation of unevenness 119 (2 μm). (G) An organic film, which is an insulating film, is formed. (H) Formation of a contact region on the insulating film (3PR). (I) 300n of aluminum by sputtering
m formation. (J) Formation of the reflective pixel electrode plate 121. (4PR)

The above steps (a) to (f)
The process conditions (i) and (j) were set to the same conditions as in Example 1. In the present embodiment, the process of forming the insulating film in the step (g) and the process of forming the contact in the step (h) are added to the first embodiment.

In the case of this embodiment, a polyimide film (RN-812 manufactured by Nissan Chemical Industries) is used as the organic insulating film in the step (g).
And a resist film for patterning the insulating film. The application conditions are as follows for the polyimide:
The spin rotation speed was 1200 rpm, the calcination temperature was 90 ° C., and the calcination time was 10 minutes. The calcination temperature was 250 ° C. and the calcination time was 1 hour. In the case of the resist, the spin rotation speed is 10
The calcination temperature was set to 00 rpm, the calcination temperature was set to 90 ° C., and the calcination time was set to 5 minutes. After that, a pattern was formed by exposure and development, followed by post-baking at 90 ° C. for 30 minutes. Thereafter, asperities were formed by a dry etching process using the resist pattern as a mask layer. The dry etching conditions for the polyimide film were such that a gas flow ratio (fluorine tetrachloride / fluorine tetrachloride /
Oxygen) is set at 0.5 to 1.5, and the reaction pressure is 5 to 300.
mTorr and plasma power of 100 to 300W.
In the photolithography process, an ordinary resist process was used.

In this embodiment, the concavities and convexities formed below the reflector are formed in the step (f). At this time, the formation method was the same as that in the step (f) of the first embodiment. In this embodiment, the formation of an insulating film,
Although the number of contact formation steps is increased, simplification can be achieved as compared with the conventional reflection type liquid crystal display device manufacturing steps.

In this example, an organic insulating film of 2 μm was formed between the unevenness and the TFT element portion and the reflective pixel electrode plate. The organic insulating film is made of Nissan Chemical's polyimide RN.
-812 was used. The conditions for applying the polyimide film were a spin speed of 800 rpm, a calcination temperature of 90 ° C., a calcination time of 10 minutes, a calcination temperature of 250 ° C., and a calcination time of 1 hour. By the resist process and the dry etching process in the contact forming step of the above step (h), the polyimide film in the contact region was removed, the resist layer was peeled off, and the contact was formed. After that, an aluminum metal 120 having high reflection efficiency and good compatibility with the TFT process is formed, and by patterning this,
The pixel electrode / reflector 121 was formed.

The reflective pixel electrode plate was manufactured with an aperture ratio of 93%. After that, the TFT substrate and the transparent conductive ITO
The substrate on the opposite side having the transparent electrode formed in was prepared so that the respective film surfaces faced each other. In this case, T
The FT substrate and the opposing substrate are subjected to an orientation treatment, and both substrates are overlapped via a spacer such as plastic particles.
Further, the panels were adhered by applying an epoxy adhesive to the periphery of the panel. Thereafter, a liquid crystal display device was manufactured by injecting GH type liquid crystal into a liquid crystal layer.

FIG. 23 is a sectional view of a reflection type liquid crystal display device manufactured in this embodiment. In FIG. 23, reference numeral 50 denotes a lower substrate, 51 denotes an opposite substrate, 52 denotes a liquid crystal layer, 56 denotes a protrusion, 57 denotes an organic insulating film, and 58 denotes a reflective pixel electrode.
The reflective pixel electrode 58 of this reflective liquid crystal display device has a uniform reflective performance with good light scattering properties, and the display performance of the reflective liquid crystal display device using the same has a white display brighter than newspaper. The monochromatic reflection type panel which has it can be realized at low cost. Further, when the RGB color filters were provided on the opposite substrate side, a bright color reflective panel could be realized at low cost.

The height of the concavities and convexities in this embodiment is not limited to the above values as in the first embodiment.
Further, the thickness of the organic insulating film located between the unevenness and the reflection plate is not limited to the above thickness. In this embodiment, a polyimide film is used as the organic insulating film. However, the present invention is not limited to this. If a silica-based material (for example, PSB series made by Toray), an acrylic resin (for example, MFR305 made by Nippon Synthetic Rubber), or an SOG film (for example, SF9214 made by Sumitomo Chemical) are used as other materials, the same effects as those of the present embodiment can be obtained. .

(Embodiment 4) In this embodiment, a manufacturing process of a reflection type liquid crystal display device of the present invention using an inverted staggered thin film transistor is shown in FIG. The process will be described below.

In the production, the following steps were performed on a glass substrate. (A) The ITO / Cr film is sputtered by 50n.
m formation. (B) Formation of gate electrode 126 (1PR). (C) 400 nm of gate insulating film 127, semiconductor layer 12
8 was formed to a thickness of 100 nm, and a doping layer 128 was formed to a thickness of 100 nm by plasma CVD. (D) Formation of a-Si island 129 (3PR). (D) Cr is formed to a thickness of 50 nm by a sputtering method. (E) Formation of source electrode 131 and drain electrode 132 (4
PR). (F) Formation of uneven layer 138 (3 μm). (G) Melt 139 of concavo-convex layer (h) Formation of organic film 141 which is an insulating film. (I) Contact region 140 to insulating film and gate terminal
(5PR). (J) Aluminum 300n by sputtering
m formation. (K) Formation of the reflective pixel electrode plate 135 (6PR).

The process conditions of the above-mentioned steps (a) to (k) were set to be the same as those in Example 2. In this embodiment, since the inverted thin film transistor is used as the thin film transistor, the number of manufacturing steps is increased as compared with the third embodiment, but can be simplified as compared with the conventional manufacturing method of the reflection type liquid crystal display device.

Thereafter, the TFT substrate and the opposing substrate having a transparent electrode formed of ITO, a transparent conductive film, are
The films were superposed so that the respective film surfaces faced each other. In this case, the TFT substrate and the opposing substrate were subjected to an orientation treatment, the two substrates were overlapped via a spacer such as a plastic particle, and then the periphery of the panel was adhered by applying an epoxy-based adhesive. Thereafter, a liquid crystal display device was manufactured by injecting GH type liquid crystal into a liquid crystal layer. Also in the case of this embodiment, a reflective liquid crystal display device having a bright and high-quality display can be realized at low cost.

(Embodiment 5) In this embodiment, a reflection type liquid crystal display device in which the unevenness located below the reflection plate is composed of a mixture of transparent particles and conductive particles will be described. FIG.
FIG. 2 shows a sectional structural view of the reflection type liquid crystal display device manufactured in this embodiment. In FIG. 25, 143 is an uneven layer, 1
45 is a reflective pixel electrode plate, 146 is an inverted staggered structure TFT
Indicates a part.

The manufacturing process of the reflection type liquid crystal display device in this embodiment is the same as that of the first to fourth embodiments except for the conditions for electrolytic film formation.
May be exactly the same. The difference is that, in the case of uneven deposition, a surfactant used together with a polymer resin such as a polyester resin and ITO, which is a conductive particle, is used in a solution used for electrolytic film formation.
The reflection type liquid crystal display device of this example was realized only by adding particles.

In this embodiment, the conductive particles have a particle diameter of 0.01.
Using ITO particles of μm to 1 μm, the volume mixing ratio between the polyester resin and the ITO particles was set to be 1: 3. Note that the conductive particles are not limited to these, and ZnO, S
conductive oxides such as nO, Al, Ag, Mo, Ta,
Even if metal particles such as W and Cr are used, the formation of the conductive concavo-convex layer is also possible.

In the reflection type liquid crystal display device of this embodiment, the storage capacitor 142 can be formed by using a conductive material for the uneven layer 143 and connecting the underlying electrode for forming unevenness to the storage line 144. it can. Therefore, since the storage capacitor can be formed without adding a process, the process can be simplified. Thereafter, a bright reflective liquid crystal display device was realized by combining the color filter and the opposite substrate in which an ITO film as a transparent conductive film was formed on a glass substrate.

(Embodiment 6) In this embodiment, a reflection type liquid crystal display device of the present invention in the case of using a liquid crystal mode other than the GH liquid crystal system will be described. FIG. 26 shows an embodiment of a reflection type liquid crystal display device of a single polarizing plate system. In FIG. 26, 149
Denotes a TFT substrate, 151 denotes a counter substrate, and 150 denotes a liquid crystal layer. On the TFT substrate side in the present reflection type device, the TFT substrate with a reflection plate manufactured in Example 3 was used as it was. A retardation plate 147 and a polarizing plate 148 are added to the opposite substrate side. Also in the reflection type liquid crystal display device manufactured in this example, bright and high-quality display performance could be realized.

[0086]

As described above, the reflection type liquid crystal display device of the present invention has a good display function and can be manufactured by a simplified process. That is, in the present invention, a substrate having an electrode for forming unevenness patterned in a region where unevenness is to be formed is immersed in a solution containing particles made of a polymer resin together with a surfactant, and a current is applied in this solution. By flowing, by selectively depositing particles made of a polymer resin on the electrodes to form a concavo-convex layer, the photolithography step and the etching step performed in the conventional reflection type liquid crystal display device can be omitted. Therefore, there is an effect that a reflective liquid crystal display device having a good display function can be manufactured at low cost.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one example of a reflection type liquid crystal display device of the present invention.

FIG. 2 is a cross-sectional view illustrating an example of a manufacturing process of the reflector unevenness of the present invention.

FIG. 3 is a diagram showing an example of the unevenness forming apparatus of the present invention.

FIG. 4 is a cross-sectional view illustrating an example of a process for producing the reflector unevenness of the present invention.

FIG. 5 is a cross-sectional view illustrating an example of a manufacturing process of the reflector unevenness of the present invention.

FIG. 6 is a cross-sectional view showing one example of the reflection type liquid crystal display device of the present invention.

FIG. 7 is a cross-sectional view showing one example of the reflection type liquid crystal display device of the present invention.

FIG. 8 is a cross-sectional view showing one example of the reflection type liquid crystal display device of the present invention.

FIG. 9 is a cross-sectional view illustrating an example of a process for producing a reflector unevenness according to the present invention.

FIG. 10 is a cross-sectional view illustrating an example of a process for manufacturing a reflector unevenness according to the present invention.

FIG. 11 is a cross-sectional view showing one example of the reflection type liquid crystal display device of the present invention.

FIG. 12 is a cross-sectional view illustrating an example of the reflective liquid crystal display device of the present invention.

FIG. 13 is a cross-sectional view illustrating an example of the reflective liquid crystal display device of the present invention.

FIG. 14 is a diagram showing an example of a plan pixel diagram of a reflection type liquid crystal display device of the present invention.

FIG. 15 is a view showing an example of the unevenness forming apparatus of the present invention.

FIG. 16 is a diagram showing an example of a plan pixel diagram of a reflection type liquid crystal display device of the present invention.

FIG. 17 is a diagram showing an example of a plan pixel diagram of the reflection type liquid crystal display device of the present invention.

FIG. 18 is a view illustrating an example of a manufacturing process of the reflective liquid crystal display device of the present invention.

FIG. 19 is a diagram illustrating an example of a manufacturing process of the reflective liquid crystal display device of the present invention.

FIG. 20 is a diagram illustrating an example of a manufacturing process of the reflective liquid crystal display device of the present invention.

FIG. 21 is a cross-sectional view showing one example of the reflection type liquid crystal display device of the present invention.

FIG. 22 is a diagram illustrating an example of a manufacturing process of the reflective liquid crystal display device of the present invention.

FIG. 23 is a cross-sectional view showing one example of the reflection type liquid crystal display device of the present invention.

FIG. 24 is a diagram illustrating an example of a manufacturing process of the reflective liquid crystal display device of the present invention.

FIG. 25 is a cross-sectional view showing one example of the reflection type liquid crystal display device of the present invention.

FIG. 26 is a cross-sectional view showing one example of the reflective liquid crystal display device of the present invention.

FIG. 27 is a cross-sectional view illustrating an example of a conventional reflective liquid crystal display device.

FIG. 28 is a view illustrating an example of a manufacturing process of a conventional reflective liquid crystal display device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Opposite substrate 2 Glass substrate 3 Color filter 4 Transparent electrode 5 Active matrix drive element 6 Inverted staggered thin film transistor 9 Interlayer insulating film 10 Organic film 11 Lower substrate 12 Reflector 14 GH liquid crystal layer 15 Incident light 16 Reflected light 17 Gate electrode Reference Signs List 18 insulating film 19 semiconductor layer 20 doping layer 21 source electrode 22 drain electrode 24 reflective pixel electrode 29 electrode for unevenness formation 30 protrusion 31 polymer resin particle 32 unevenness 33 organic resin 35 cathode 36 surfactant 37 direct current 38 smooth unevenness 39 Fusion with Adjacent Protrusion 40 Polarizer 41 1/4 Phase Difference Plate 42 Thin Film Transistor with Inverted Stagger 43 MIM Diode 50 Lower Substrate 51 Opposite Substrate 52 Liquid Crystal Layer 53 Insulating Substrate 54 Active Matrix Drive Element 55 Conductive Electrode 56 Sudden Part 57 Organic insulating film or inorganic insulating film 58 Reflective electrode plate 59 Source electrode 60 Contact hole part 61 Smooth convex shape 62 Uneven shape 63 Polymer resin particles 64 Conductive particles 65 Reflection pixel electrode 66 Organic or inorganic insulating Film 67 Projecting part 69 Storage capacitance line 70 Gate line 71 Drain line 72 Contact hole part 73 Convex part 74 Reflection pixel electrode plate 75 Substrate 76 Electrode 77 DC power supply 80 Drain electrode 81 Source electrode 82 Pattern of unevenness forming electrode 83 Doping layer 84 Semiconductor layer 85 gate insulating layer 86 gate electrode 87 resist layer 88 gate electrode pattern 89 island 90 unevenness 91 unevenness 92 interlayer film 93 contact portion 94 reflective pixel electrode plate 95 TFT portion 110 ITO 111 drain electrode 112 source electrode 113 uneven shape Forming electrode pattern 114 doping layer 115 semiconductor layer 116 gate insulating film 117 Cr layer 118 island part 119 unevenness 120 aluminum 121 reflective pixel electrode plate 122 convex 123 melted convex 124 continuous convex structure 125 TFT part 126 gate electrode 127 gate insulating film 128 Doping layer 129 Island formation 130 Roughness forming electrode 131 Drain electrode 132 Source electrode 133 Roughness 134 Roughness melt 135 Reflection pixel electrode plate 136 TFT 137 Contact region 138 Roughness layer 139 Roughness layer melt 140 Contact region 141 Organic film 142 Storage capacitance 143 Roughness layer 144 Storage Line 145 Insulating Substrate Having Reflective Pixel Active Matrix Driving Element and Reflector Having Irregular Surface, Insulating Base Having Transparent Electrode In a reflection type liquid crystal display device having a structure in which a liquid crystal layer is sandwiched between a plate and a concavo-convex layer located below the reflection plate, the projections and depressions are formed of an aggregate of particles formed on a conductive film by an electrolytic film formation method. A reflective liquid crystal display device. Electrode plate 146 Inverted stagger structure TFT section 147 Phase difference plate 148 Polarizing plate 149 TFT substrate 150 Liquid crystal layer 151 Opposite side substrate

Continued on the front page F term (reference) 2H092 JA25 JA26 JA29 JA38 JA42 JA44 JA46 JB13 JB23 JB32 JB33 JB38 JB52 JB56 JB63 JB69 KA05 KA07 KA16 KA18 KB13 KB14 KB24 MA05 MA08 MA14 MA15 MA16 MA18 MA19 MA20 MA27 MA31 NA25 PA12 5C094 AA02 AA44 BA03 BA43 BA47 CA19 CA23 DA13 EA04 EB02 EB04 ED02 ED11 ED14 FB12 FB14 FB15 5G435 AA00 AA17 BB12 BB16 CC09 EE33 FF03 FF05 KK05

Claims (6)

[Claims] 1. A reflection type liquid crystal display device having a structure in which a liquid crystal layer is sandwiched between an insulating substrate having an active matrix driving element and a reflector having an uneven surface, and an insulating substrate having a transparent electrode. A reflection type liquid crystal display device, wherein an uneven layer located below a reflection plate is composed of an aggregate of particles formed on a conductive film by an electrolytic deposition method. 2. A reflection type liquid crystal display device having a structure in which a liquid crystal layer is sandwiched between an insulating substrate having an active matrix driving element and a reflector having an uneven surface, and an insulating substrate having a transparent electrode. The uneven layer located at the lower part of the reflection plate has unevenness formed of an aggregate of particles formed on the conductive film by an electrolytic film forming method, and an organic insulating film or an inorganic insulating film formed so as to cover the unevenness. A reflective liquid crystal display device comprising: a film. 3. The reflection type liquid crystal display device according to claim 2, wherein the particles constituting the uneven layer are made of a mixture of transparent particles and conductive particles. 4. The reflection type liquid crystal display device according to claim 2, wherein a part of the uneven layer formed under the reflector has a function as a parallel capacitance with respect to a liquid crystal pixel capacitance. 5. A method of manufacturing a reflection type liquid crystal display device having a structure in which a liquid crystal layer is sandwiched between an insulating substrate having an active matrix driving element and a reflector having an uneven surface, and an insulating substrate having a transparent electrode. In forming an uneven layer located under the reflector, an electrode for forming unevenness in which a conductive film formed in a manufacturing process of the active matrix driving element is patterned in a region where unevenness is to be formed in advance Is immersed in a solution containing a polymer resin together with a surfactant, one of the electrodes immersed in the solution and the electrode for driving the liquid crystal, and the electrode for driving the liquid crystal is an anode. Connect a DC power supply so that
A method of manufacturing a reflection type liquid crystal display device, characterized in that a current made to flow between both electrodes deposits particles made of a polymer resin in a solution on an electrode for driving the liquid crystal, thereby forming an uneven layer. . 6. A method for manufacturing a reflection type liquid crystal display device having a structure in which a liquid crystal layer is sandwiched between an insulating substrate having an active matrix driving element and a reflector having an uneven surface, and an insulating substrate having a transparent electrode. In forming an uneven layer located under the reflector, an electrode for forming unevenness in which a conductive film formed in a manufacturing process of the active matrix driving element is patterned in a region where unevenness is to be formed in advance Is immersed in a solution containing particles made of a polymer resin and particles made of a conductive material together with a surfactant, and one of the electrodes immersed in this solution and an electrode for driving the liquid crystal. A DC power supply is connected so that the electrode for driving the liquid crystal becomes an anode, and a current is passed between the two electrodes, so that the polymer tree in the solution is placed on the electrode for driving the liquid crystal. A method of manufacturing a reflective liquid crystal display device, comprising depositing particles made of a fat and particles made of a conductive material to form an uneven layer.