JP2000138321A - Electronic component - Google Patents

Electronic component

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Publication number
JP2000138321A
JP2000138321A JP10309662A JP30966298A JP2000138321A JP 2000138321 A JP2000138321 A JP 2000138321A JP 10309662 A JP10309662 A JP 10309662A JP 30966298 A JP30966298 A JP 30966298A JP 2000138321 A JP2000138321 A JP 2000138321A
Authority
JP
Japan
Prior art keywords
cavity
chip
resin
electronic component
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10309662A
Other languages
Japanese (ja)
Other versions
JP3457895B2 (en
Inventor
Naoki Hayashi
直樹 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP30966298A priority Critical patent/JP3457895B2/en
Priority to US09/387,216 priority patent/US6229249B1/en
Publication of JP2000138321A publication Critical patent/JP2000138321A/en
Application granted granted Critical
Publication of JP3457895B2 publication Critical patent/JP3457895B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide an electronic component of a structure, wherein an IC chip is jointed firmly to a container. SOLUTION: An electronic component 10 consists of an IC element 4, having conductive bumps 3 on the lower surface thereof and a container 1 having a cavity 2 for housing the IC element 4 and with the element 4 made to joint to the bottom of the cavity 2 of the container via the bumps 3, a thermosetting resin 5 is filled in the remaining space within the cavity 2 to have the resin 5 cured. With the resin 5 filled in such a way that the surface of the resin 5 becomes lower than the end edge of an aperture formed in the cavity 2 and becomes higher than the upper surface of the element 4, the distance between the element 4 and the wall surface of the cavity 2 is set smaller than the thickness of the element 4, and the distance between the upper surface of the element 4 and the surface of the resin 5 is set smaller than that between the element 4 and the bottom of the cavity 2.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、キャビティを有す
る容器内にフリップチップIC素子を収容した電子部品
に属する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component in which a flip-chip IC element is housed in a container having a cavity.

【0002】[0002]

【従来の技術】容器の底面に形成したキャビティにバン
プを介してフェイスボンディング方式でフリップチップ
IC素子が実装され、このフリップチップIC素子と容
器底面との間隙に樹脂が充填された構造の電子部品が知
られている。
2. Description of the Related Art An electronic component having a structure in which a flip chip IC element is mounted by a face bonding method via a bump in a cavity formed in a bottom surface of a container, and a resin is filled in a gap between the flip chip IC element and the bottom surface of the container. It has been known.

【0003】例えば、水晶振動子の温度補償を行うため
のフリップチップIC素子(以下、単に「ICチップ」
という)が実装された温度補償型水晶発振器において
は、図5に示すように、セラミック層を多層に積層して
なる容器11のキャビティ12内に、金Auバンプ13
を形成したICチップ14を、Auバンプ13がキャビ
ティ12の底面の電極パッド(図示省略)と接するよう
に収容する。そして、ICチップ14は、Agペースト
による接着又は超音波による融着等の手段でAuバンプ
13及び電極パッドを介して容器11のキャビティ12
の底面に接合される。このようにフェイスボンディング
方式で実装されるのは、近年の電子部品の小型化、薄型
化の要請による。ただし、Agペーストによる接着や超
音波による融着などの接合手段だけでは1バンプ当たり
6gの重みで剥離してしまうほどに接合強度が乏しいの
で、接合後に、ICチップ14とキャビティ12の底面
との間隙にアンダーフィル樹脂と称される収縮率の高い
熱硬化性樹脂が充填されて樹脂の硬化とともにICチッ
プ14がキャビティ12の底面に固定されていた。
For example, a flip-chip IC element (hereinafter simply referred to as an “IC chip”) for performing temperature compensation of a crystal unit
As shown in FIG. 5, a gold Au bump 13 is provided in a cavity 12 of a container 11 formed by laminating ceramic layers in multiple layers.
Is accommodated such that the Au bump 13 is in contact with an electrode pad (not shown) on the bottom surface of the cavity 12. Then, the IC chip 14 is bonded to the cavity 12 of the container 11 through the Au bump 13 and the electrode pad by a method such as bonding with an Ag paste or fusion using an ultrasonic wave.
Bonded to the bottom of The mounting by the face bonding method in this way is due to the recent demand for smaller and thinner electronic components. However, the bonding strength of the bonding means such as bonding with an Ag paste or fusion with an ultrasonic wave alone is so low that the bonding is peeled off at a weight of 6 g per bump, so that the bonding between the IC chip 14 and the bottom surface of the cavity 12 is performed after bonding. The gap is filled with a thermosetting resin having a high shrinkage factor called an underfill resin, and the IC chip 14 is fixed to the bottom surface of the cavity 12 with the curing of the resin.

【0004】尚、水晶振動子は、容器11のキャビティ
12が形成された面と反対側の面に搭載され、気密的に
封止されているが、図示を省略する。
The quartz oscillator is mounted on the surface of the container 11 opposite to the surface on which the cavity 12 is formed and is hermetically sealed, but is not shown.

【0005】[0005]

【発明が解決しようとする課題】しかし、容器の薄型化
の要請は高まる一方、ICチップを搭載する部分の裏側
に存在する構成要素、特に水晶振動子への影響を考慮す
ると、Agペーストの塗布量や超音波のパワーを小さく
して接合することが必要になる。
However, while there is an increasing demand for a thinner container, application of an Ag paste is considered in consideration of the effects on components existing on the back side of a portion on which an IC chip is mounted, particularly on a quartz oscillator. It is necessary to reduce the amount and power of the ultrasonic wave for bonding.

【0006】また、マザーボードなどの他のプリント配
線基板にキャビティ側をボード側に向けて実装する容器
であって、ICチップが収容されるキャビティと同じキ
ャビティ内にコンデンサ等の他の回路素子が搭載される
ものの場合、コンデンサ電極とボードの配線パターンと
が短絡する可能性があった。
[0006] A container mounted on another printed wiring board such as a motherboard such that the cavity side faces the board side, and another circuit element such as a capacitor is mounted in the same cavity as the cavity in which the IC chip is accommodated. However, there is a possibility that the capacitor electrode and the wiring pattern of the board are short-circuited.

【0007】それ故、本発明の目的は、ICチップが容
器に強く接合された電子部品を提供することにある。
Therefore, an object of the present invention is to provide an electronic component in which an IC chip is strongly bonded to a container.

【0008】[0008]

【課題を解決するための手段】その目的を達成するため
に、本発明の電子部品は、下面に導電性バンプを有する
IC素子を、該IC素子を収容し、底面に電極パッドが
形成されたキャビティを有する容器に接合させるととも
に、キャビティ内の残部空間に熱硬化性樹脂を充填・硬
化させた電子部品において、前記熱硬化性樹脂は、その
表面がキャビティの開口端縁よりも低く、且つIC素子
の上面より高くなるように充填されているとともに、前
記IC素子とキャビティの壁面との距離が、IC素子の
厚みよりも小さく、且つIC素子の上面と前記熱硬化性
樹脂の表面との距離が、IC素子とキャビティの底面と
の距離よりも小さいことを特徴とする。
In order to achieve the object, an electronic component according to the present invention comprises an IC element having a conductive bump on a lower surface, the IC element being housed, and an electrode pad formed on a bottom surface. In the electronic component in which the remaining space in the cavity is filled and cured with a thermosetting resin while being bonded to a container having a cavity, the thermosetting resin has a surface lower than an opening edge of the cavity and an IC. Filled so as to be higher than the upper surface of the element, the distance between the IC element and the wall surface of the cavity is smaller than the thickness of the IC element, and the distance between the upper surface of the IC element and the surface of the thermosetting resin. Is smaller than the distance between the IC element and the bottom surface of the cavity.

【0009】上記従来の電子部品においては、図6に示
すように、熱硬化性樹脂15は矢印方向に収縮する。そ
の収縮に伴ってICチップ14をキャビティ12の底面
側に引っ張られるように応力Fが発生し、これによりI
Cチップ14が固定されていた。
In the above-mentioned conventional electronic component, as shown in FIG. 6, the thermosetting resin 15 shrinks in the direction of the arrow. With the contraction, a stress F is generated so that the IC chip 14 is pulled toward the bottom side of the cavity 12.
The C chip 14 was fixed.

【0010】これに対して本発明の電子部品は、ICチ
ップとキャビティの底面との間隙に充填される樹脂の収
縮力だけでなくICチップの周囲や上面に充填される樹
脂の収縮力をも利用することができる。従って、ICチ
ップを固定する応力Fは従来の電子部品より大きい。た
だし、熱硬化性樹脂の充填量がキャビティの開口端縁よ
りも高くなると、この面を実装面としてマザーボード等
に実装できず、またコストが高くなり、硬化に長時間を
要するし、更にまた薄型化の要請にも反するので、熱硬
化性樹脂の表面が開口端縁よりも低くなるようにするこ
とが重要である。
On the other hand, the electronic component of the present invention has not only the contraction force of the resin filled in the gap between the IC chip and the bottom surface of the cavity, but also the contraction force of the resin filled around and on the top surface of the IC chip. Can be used. Therefore, the stress F for fixing the IC chip is larger than that of a conventional electronic component. However, when the filling amount of the thermosetting resin is higher than the opening edge of the cavity, this surface cannot be mounted on a motherboard or the like as a mounting surface, the cost increases, the curing takes a long time, and furthermore, the thickness is reduced. Therefore, it is important that the surface of the thermosetting resin is lower than the opening edge.

【0011】本発明電子部品を製造する適切な方法は、
下面に導電性バンプを有するIC素子と、IC素子を収
容するキャビティが形成された容器とを備える電子部品
前駆体から、前記IC素子を導電性バンプを介して前記
容器のキャビティ底面に接合させるとともに、キャビテ
ィ内の残部空間に熱硬化性樹脂を充填し硬化させること
により、電子部品を製造する方法において、前記熱硬化
性樹脂を、その表面がキャビティの開口端縁よりも低
く、且つIC素子の上面より高くなるように充填した
後、雰囲気温度を一気に硬化温度まで昇温して表面を先
に硬化させ、次いで内部を硬化させることを特徴とす
る。
A suitable method for manufacturing the electronic component of the present invention is as follows.
From an electronic component precursor including an IC element having a conductive bump on a lower surface and a container in which a cavity for accommodating the IC element is formed, the IC element is joined to a bottom surface of the cavity of the container via a conductive bump. In a method of manufacturing an electronic component by filling and curing a thermosetting resin in a remaining space in a cavity, the thermosetting resin may have a surface lower than an opening edge of the cavity and an IC element. After filling so as to be higher than the upper surface, the ambient temperature is raised to the curing temperature at a stretch, the surface is cured first, and then the inside is cured.

【0012】このように樹脂充填後に雰囲気温度を一気
に硬化温度まで昇温して表面を先に硬化させると、樹脂
の収縮によって先に硬化した表面がキャビティ底面に引
っ張られる力が発生し、ICチップも底面側に押さえら
れて強く固定されるからである。
As described above, when the ambient temperature is raised to the curing temperature at a stretch after the resin is filled and the surface is cured first, the shrinkage of the resin generates a force to pull the previously cured surface to the bottom of the cavity. Is also pressed down on the bottom side and is strongly fixed.

【0013】[0013]

【発明の実施の形態】本発明の実施形態を図面とともに
説明する。図1は実施形態の電子部品を示す断面図であ
る。
Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view showing an electronic component according to the embodiment.

【0014】電子部品10は、各々配線パターンを有す
る3層のセラミック絶縁層1a、1b、1cを積層して
なる容器1と、ICチップ4とを備える。枠状の絶縁層
1a、1bの内周と板状の絶縁層1cとで囲まれる空間
が、ICチップ4を収容するキャビティ2となる。IC
チップ4の電極部には予めAuバンプ3が形成されてお
り、ICチップ4は、このバンプ3が絶縁層1c上の電
極パッド6にAgペーストによる接着又は超音波による
融着により接合されることにより、容器1の底面に形成
された電極パッド6と電気的に接続される。ICチップ
4は、この接合によって機械的にも固定されるが、キャ
ビティ2の残部空間に熱硬化性の樹脂5を充填し硬化さ
せることにより強く固定される。
The electronic component 10 includes a container 1 formed by laminating three ceramic insulating layers 1a, 1b, and 1c each having a wiring pattern, and an IC chip 4. The space surrounded by the inner circumferences of the frame-shaped insulating layers 1a and 1b and the plate-shaped insulating layer 1c becomes the cavity 2 for accommodating the IC chip 4. IC
Au bumps 3 are formed in advance on the electrode portions of the chip 4, and the bumps 3 of the IC chip 4 are bonded to the electrode pads 6 on the insulating layer 1c by adhesion with Ag paste or fusion by ultrasonic waves. Thereby, it is electrically connected to the electrode pad 6 formed on the bottom surface of the container 1. The IC chip 4 is mechanically fixed by this bonding, but is strongly fixed by filling the remaining space of the cavity 2 with a thermosetting resin 5 and curing the resin.

【0015】樹脂5としては、例えばエポキシ系であっ
て、粘度3000cps、線膨張係数30ppm、収縮
率1.7%のものが市販されている。樹脂5は、その表
面がICチップ4の上面とキャビティ2の開口端縁との
間に位置する程度に隙間無く充填される。そして、充填
後、一気に樹脂の硬化温度まで昇温する。これにより表
面が先に硬化して収縮するとともに、その収縮力でIC
チップ4が絶縁層1c側に押さえられる。
As the resin 5, for example, an epoxy resin having a viscosity of 3000 cps, a linear expansion coefficient of 30 ppm, and a shrinkage of 1.7% is commercially available. The resin 5 is filled without a gap so that the surface thereof is located between the upper surface of the IC chip 4 and the opening edge of the cavity 2. Then, after filling, the temperature is raised to the curing temperature of the resin at a stretch. This causes the surface to harden and shrink first, and the shrinking force causes IC
The chip 4 is pressed toward the insulating layer 1c.

【0016】更に樹脂5の充填量としては、図2に示す
ように、前記ICチップ4とキャビティ2の壁面との距
離をB、ICチップ4の厚さをTとするとき、BはT以
下であると好ましい。これは、ICチップ4を押さえる
応力Fと距離Bとの関係を考えると、応力Fは図3のよ
うにBが増すに連れて小さくなり、BがTを超えると一
定になるからである。この理由は、図2の破線で囲まれ
るT×Bの長方形の面積S部分の形状がT>Bのときは
縦長となり、縦方向の収縮力が大きくなるからである。
逆にT<Bのときは面積S部分は横長となり、横方向の
収縮力が大きくなるだけで、ICチップ4を押さえる応
力Fは弱くなる。ただし、Bは最低0.05mmは必要
である。これよりBが小さいと、キャビティ2内にIC
チップ4を収容する際に、ICチップ4がキャビティ2
の壁面に接触してICチップ4を安定して収容できず、
またICチップ4が欠ける可能性があるからである。
Further, as shown in FIG. 2, when the distance between the IC chip 4 and the wall surface of the cavity 2 is B and the thickness of the IC chip 4 is T, as shown in FIG. Is preferable. This is because, considering the relationship between the stress F for holding down the IC chip 4 and the distance B, the stress F decreases as B increases and becomes constant when B exceeds T as shown in FIG. The reason for this is that when the shape of the area S of the T × B rectangle surrounded by the dashed line in FIG. 2 is T> B, the length becomes longer and the contraction force in the vertical direction becomes larger.
Conversely, when T <B, the area S becomes horizontally long, and only the lateral contraction force increases, but the stress F for holding down the IC chip 4 decreases. However, B must be at least 0.05 mm. If B is smaller than this, IC
When the chip 4 is accommodated, the IC chip 4
The IC chip 4 cannot be stably accommodated by contacting the wall surface of
Also, the IC chip 4 may be missing.

【0017】また、ICチップ4の上面と前記樹脂5の
表面との距離をC、ICチップ4とキャビティ2の底面
との距離をAとするとき、応力Fは図4のようにCが増
すに連れて大きくなり、CがAと同等のとき最大とな
る。これは、CがAより大きくなると、ICチップ4の
上部にある樹脂の収縮力がICチップ4の下部にある樹
脂の収縮力よりも大きくなるからである。
When the distance between the upper surface of the IC chip 4 and the surface of the resin 5 is C and the distance between the IC chip 4 and the bottom surface of the cavity 2 is A, the stress F increases as shown in FIG. , And becomes maximum when C is equal to A. This is because when C becomes larger than A, the shrinking force of the resin above the IC chip 4 becomes larger than the shrinking force of the resin below the IC chip 4.

【0018】キャビティ2内には、ICチップ4の他に
コンデンサなどの回路素子が収容される場合がある。例
えば電子部品が水晶発振器であって、ICチップ4が水
晶振動子の温度補償に用いられるときは、ICチップ4
に集積(IC)化された発振インバータに供給される電
源電圧に重畳する高周波ノイズをカットする必要があ
る。また、発振インバータの出力信号に交流成分が重畳
しないようにする必要もある。これらの目的を外部回路
を複雑化することなく達成するために上記キャビティ2
内にコンデンサも実装される。この場合、コンデンサの
方がICチップ4よりも薄ければ、樹脂5がICチップ
4を覆うと同時にコンデンサをも覆うこととなる。逆に
コンデンサの方が厚い場合でもキャビティ2の開口端縁
を超えない限り、コンデンサを覆う程度に樹脂5を充填
するとよい。水晶発振器の場合、容器を仕切りとしてキ
ャビティの反対側に水晶振動子が搭載される関係上、キ
ャビティをマザーボード側に向けてマザーボードに実装
されるため、樹脂5でコンデンサを覆うことによりコン
デンサ電極とボードの配線との短絡が防止されるからで
ある。
In some cases, a circuit element such as a capacitor is housed in the cavity 2 in addition to the IC chip 4. For example, when the electronic component is a crystal oscillator and the IC chip 4 is used for temperature compensation of a crystal unit, the IC chip 4
It is necessary to cut high-frequency noise superimposed on a power supply voltage supplied to an oscillation inverter integrated (IC). Further, it is necessary to prevent the AC component from being superimposed on the output signal of the oscillation inverter. In order to achieve these objects without complicating the external circuit, the cavity 2 is used.
A capacitor is also mounted inside. In this case, if the capacitor is thinner than the IC chip 4, the resin 5 covers the IC chip 4 and also covers the capacitor. Conversely, even if the capacitor is thicker, it is preferable to fill the resin 5 just enough to cover the capacitor as long as it does not exceed the opening edge of the cavity 2. In the case of a crystal oscillator, since the crystal resonator is mounted on the opposite side of the cavity with the container as a partition, the cavity is mounted on the motherboard with the cavity facing the motherboard side. This is because a short circuit with the wiring is prevented.

【0019】[0019]

【発明の効果】以上のように、本発明によれば、容器に
対するICチップの実質的な接合強度を高めることがで
きるので、電子部品の一層の薄型化を達成することがで
きる。
As described above, according to the present invention, the substantial bonding strength of the IC chip to the container can be increased, so that the electronic component can be further thinned.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施形態の電子部品を示す断面図である。FIG. 1 is a cross-sectional view illustrating an electronic component according to an embodiment.

【図2】実施形態の電子部品に働く応力図である。FIG. 2 is a stress diagram acting on the electronic component of the embodiment.

【図3】ICチップとキャビティの壁面との距離Bと、
ICチップに働く応力Fとの関係を示すグラフである。
FIG. 3 shows a distance B between the IC chip and the wall surface of the cavity;
4 is a graph showing a relationship with a stress F acting on an IC chip.

【図4】ICチップとキャビティの底面との距離Aと、
ICチップに働く応力Fとの関係を示すグラフである。
FIG. 4 shows a distance A between the IC chip and the bottom surface of the cavity;
4 is a graph showing a relationship with a stress F acting on an IC chip.

【図5】従来の電子部品を示す断面図である。FIG. 5 is a sectional view showing a conventional electronic component.

【図6】従来の電子部品に働く応力図である。FIG. 6 is a stress diagram acting on a conventional electronic component.

【符号の説明】[Explanation of symbols]

1,11 容器 2,12 キャビティ 3,13 バンプ 4,14 ICチップ 5,15 樹脂 10 電子部品 1,11 container 2,12 cavity 3,13 bump 4,14 IC chip 5,15 resin 10 electronic component

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 下面に導電性バンプを有するIC素子
を、該IC素子を収容し、底面に電極パッドが形成され
たキャビティを有する容器に接合させるとともに、キャ
ビティ内の残部空間に熱硬化性樹脂を充填・硬化させた
電子部品において、 前記熱硬化性樹脂は、その表面がキャビティの開口端縁
よりも低く、且つIC素子の上面より高くなるように充
填されているとともに、前記IC素子とキャビティの壁
面との距離が、IC素子の厚みよりも小さく、且つIC
素子の上面と前記熱硬化性樹脂の表面との距離が、IC
素子とキャビティの底面との距離よりも小さいことを特
徴とする電子部品。
An IC element having a conductive bump on a lower surface is joined to a container containing the IC element and having a cavity having an electrode pad formed on a bottom surface, and a thermosetting resin is formed in a remaining space in the cavity. In the electronic component filled and cured, the thermosetting resin is filled so that its surface is lower than the opening edge of the cavity and higher than the upper surface of the IC element. Is smaller than the thickness of the IC element, and
The distance between the upper surface of the element and the surface of the thermosetting resin is IC
An electronic component having a distance smaller than a distance between an element and a bottom surface of a cavity.
JP30966298A 1998-08-31 1998-10-30 Electronic components Expired - Fee Related JP3457895B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP30966298A JP3457895B2 (en) 1998-10-30 1998-10-30 Electronic components
US09/387,216 US6229249B1 (en) 1998-08-31 1999-08-31 Surface-mount type crystal oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30966298A JP3457895B2 (en) 1998-10-30 1998-10-30 Electronic components

Publications (2)

Publication Number Publication Date
JP2000138321A true JP2000138321A (en) 2000-05-16
JP3457895B2 JP3457895B2 (en) 2003-10-20

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Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270638A (en) * 2001-03-06 2002-09-20 Nec Corp Semiconductor device, resin-sealing method and resin- sealing apparatus
JP2009016884A (en) * 2008-10-22 2009-01-22 Kyocera Corp Electronic component

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270638A (en) * 2001-03-06 2002-09-20 Nec Corp Semiconductor device, resin-sealing method and resin- sealing apparatus
JP2009016884A (en) * 2008-10-22 2009-01-22 Kyocera Corp Electronic component

Also Published As

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