JP2000138254A - Wiring device, wiring structure, semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To simplify manufacturing processes and reduce cost, regarding a wiring device and a wiring structure, where an outer connection electrode and wiring are formed on a board (or a semiconductor element), or an outer connection electrode and wiring are installed, and regarding a semiconductor device and the manufacturing method of the semiconductor device. SOLUTION: A ball part 11, which is formed on the tip part of a wire member 10 and turned into an outer connection terminal, is fixed temporarily on a specified outer connection electrode forming position of a semiconductor chip 1 by the use of using a clamp head 25. The wire member 10 is pulled out from the outer connection electrode forming position to an electrode 2 formed on the semiconductor chip 1 by using a wire feeder 21. The wire member 10 is wire-bonded to the electrode 2, by using a bonder head 24 and cut at a specified position. After that, sealing resin sealing is formed on at least the bonding position of the wire member 10 and the electrode 2 on the semiconductor chip 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring device, a wiring structure, a semiconductor device and a method of manufacturing a semiconductor device, and more particularly to arranging external connection electrodes and wiring on a substrate (or a semiconductor element), or external connection electrodes. The present invention relates to a wiring device having a wiring, a wiring structure, a semiconductor device, and a method for manufacturing a semiconductor device.

In recent years, the density and size of semiconductor devices have been rapidly increased. Accordingly, the density of electrodes formed on a semiconductor chip or a substrate provided as an interposer in a semiconductor device has been increased. On the other hand, semiconductor devices are also required to have lower cost and higher reliability. Therefore, it is necessary to efficiently manufacture a semiconductor device having high density and high reliability at low cost.

[0003]

2. Description of the Related Art Conventionally, CSP (Chip Size Package), BG
A (Ball Grid Array), FBGA (Fine pitch Ball Grid)
Array) and other package structures are known. This CS
Various structures have been proposed for P, BGA, and FBGA, but each package structure has an interposer that leads out an electrode (pad) formed on a semiconductor element (semiconductor chip) to a bump serving as an external connection terminal. It is configured to have.

In general, many substrates are used as the interposer.
AB (Tape Automated Bonding) films, ceramic substrates and the like are used. This substrate includes a substrate body, a chip connection electrode connected to the semiconductor chip, a bump electrode to which a bump serving as an external connection terminal is joined, and wiring for connecting the chip connection electrode and the bump electrode. Is provided.

Conventionally, chip connection electrodes,
As means for forming bump electrodes, wiring, and the like, thin film forming techniques such as plating, etching, vapor deposition, and sputtering have been used.

[0006]

However, a method for forming a chip connection electrode, a bump electrode, a wiring, and the like by using a thin film forming technique such as a plating method, an etching method, a vapor deposition method, and a sputtering method as in the prior art. Then, there was a problem that the process of manufacturing the substrate became complicated and the manufacturing efficiency was reduced. In addition, there is also a problem that the manufacturing equipment becomes complicated as the manufacturing process becomes more complicated, so that the equipment cost increases, and in turn, the product cost increases.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and has as its object to provide a wiring device, a wiring structure, a semiconductor device, and a method of manufacturing a semiconductor device, which can simplify a manufacturing process and reduce costs. I do.

[0008]

Means for Solving the Problems In order to solve the above problems, the present invention is characterized by taking the following means. The wiring device according to claim 1, wherein the ball portion is formed on the wire member, a clamp portion pressing the ball portion onto a substrate and clamped, and the ball portion is clamped by the clamp portion. While maintaining the state, the wire member withdrawing portion to pull out the wire member to the electrode on the substrate,
A bonding tool for bonding the wire member to the electrode and cutting the wire member.

According to a second aspect of the present invention, the wiring structure is provided on a substrate on which electrodes are formed, and on a side of the substrate on which the electrodes are formed. One end of the wiring structure is bonded to the electrodes. It is characterized by comprising a wire member having a ball portion formed integrally with the other end portion and functioning as an external connection terminal, and a sealing resin for fixing the wire member.

According to a third aspect of the present invention, there is provided a semiconductor device in which an electrode is formed, and the semiconductor device is provided on an electrode forming side surface of the semiconductor element, and one end is bonded to the electrode. In addition, a wire member having a ball portion formed integrally with the other end portion and functioning as an external connection terminal is provided, and a sealing resin for fixing the wire member is provided.

According to a fourth aspect of the present invention, in the semiconductor device of the third aspect, a covered wire is used as the wire member. According to a fifth aspect of the present invention, in the semiconductor device according to the third or fourth aspect, a portion of the wire member exposed from the sealing resin is configured to be displaceable. is there.

According to a sixth aspect of the present invention, in the method of manufacturing a semiconductor device, a ball portion serving as an external connection terminal formed in advance at a tip portion of the wire member is temporarily placed at a predetermined external connection electrode forming position of the semiconductor element. A temporary fixing step of fixing, a wire drawing step of drawing the wire member from the external connection electrode forming position to an electrode formed on the semiconductor element, and wire bonding the wire member to the electrode, and after the wire bonding, The method includes a wire disposing step for cutting the wire member, and a resin forming step for forming a sealing resin for fixing the wire member.

Further, the invention according to claim 7 is characterized in that, in the method of manufacturing a semiconductor device according to claim 6, wedge bonding is used as a wire bonding method performed in the wire arranging step. is there. Each of the means described above operates as follows.

According to the first aspect of the present invention, the wire member having the ball portion formed in the ball forming portion is clamped at a predetermined position on the substrate by the clamp portion by the wire member drawing portion. It is pulled out to the electrode. Then, the wire member is bonded to the electrode by a bonding tool portion, whereby the wire member is electrically connected to the substrate.

As described above, since the ball portion is formed on the wire member bonded to the electrode, the ball portion can function as an external connection terminal. Further, the wire member functions as a wiring for connecting the electrode and a ball portion functioning as an external connection terminal. Therefore, by using the wiring device having the above configuration, the processing of forming the external connection terminals and the wiring can be performed collectively, and the wiring processing and the formation of the external connection terminals on the substrate can be efficiently performed in a short time. It is possible to do. In addition, since complicated and high running cost processes such as vapor deposition, sputtering, and etching used in the conventional process of forming external connection terminals and wiring are not required, cost reduction and simplification of the process can be achieved.

According to the second and third aspects of the invention, the wire member provided on the substrate (semiconductor element) has one end bonded to the electrode and the other end connected to the external connection terminal. Since the ball portion functioning as a unit is integrally formed, it is not necessary to separately provide a pad for forming an external connection terminal on a substrate (semiconductor element). And cost reduction can be achieved. In addition, since wiring on the substrate (semiconductor element) is performed by wire members,
The wire member on the upper side has a high degree of freedom in routing, and thus the wiring design can be facilitated.

According to the fourth aspect of the present invention, since the outer periphery of the covered wire is covered with the insulating material by using the covered wire as the wire member, the wire member is in direct contact with the wire member. The wires can be crossed with each other, and the degree of freedom in drawing the wire members can be further increased. According to the fifth aspect of the present invention, since a portion of the wire member exposed from the sealing resin is configured to be displaceable, a difference in thermal expansion between the mounting board on which the semiconductor device is mounted and the semiconductor element is provided. However, since the stress generated due to the difference in thermal expansion is absorbed by the displacement of the wire member, the mounting reliability can be improved.

According to the sixth aspect of the present invention, in the wire member having the ball portion formed in advance, the ball portion is temporarily fixed to a predetermined external connection electrode forming position of the semiconductor element in the temporary fixing step. In the subsequent wire drawing step, the wire member is drawn from the position where the external connection electrode is formed to the electrode formed on the semiconductor element while maintaining the ball portion temporarily fixed. At this time, since the ball portion is temporarily fixed, the wire member can be easily and reliably drawn out.

In the subsequent wire arranging step,
The wire member is wire-bonded to the electrode, and the wire member is cut after the wire bonding. In this state, the wire member is temporarily fixed at one end and is wire-bonded at the other end to the electrode, so that the wire member maintains a state temporarily fixed on the semiconductor element.

In the subsequent resin forming step, the wire member is fixed with a sealing resin, whereby the wire member is permanently fixed on the semiconductor element. By manufacturing a semiconductor device using the above-described method, external connection terminals (ball portions) and wiring can be formed collectively, and the manufacturing process can be simplified. Further, since complicated and high running cost processes such as vapor deposition, sputtering, and etching used in the conventional process of forming external connection terminals and wirings are not required, cost can be reduced.

Further, according to the present invention, since wedge bonding is used as a wire bonding method performed in the wire arranging step, the area required for the wedge bonding can be reduced, and the area of the pad can be reduced. Since the size can be reduced, it is possible to cope with a semiconductor device with high density.

[0022]

Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows a wiring device 20 according to one embodiment of the present invention. The wiring device 20 forms external connection terminals and wiring collectively on a substrate as described later in detail. Hereinafter, the configuration of the wiring device 20 will be described in detail.

In the following description, an example using a semiconductor chip 1 (semiconductor element) as a substrate will be described.
Substrates of other configurations (eg, resin substrates, ceramic substrates,
(A film-like substrate or the like).
The wiring device 20 generally includes a wire feeder 21, a wire clamper 22, a tension clamper 23, a bonder head 24, a clamp head 25, and a torch 2.
6 and the like. These components are configured to be movable in a predetermined direction by a driving device.

The wire feeder 21, the wire clamper 22, and the tension clamper 23 constitute the above-described wire member pull-out portion, the bonder head 24 constitutes the above-described bonding tool portion, and the clamp head 25 constitutes the above-described clamp portion. The torch 26 constitutes a ball forming part. The wire feeder 21 has the wire member 10 (for example, made of a gold wire) inserted thereinto, and guides the wire member 10 to be fed out. The wire clamper 22 and the tension clamper 23 are disposed at side positions of the wire feeder 21 so as to face the wire member 10.

The wire clamper 22 functions to clamp the wire member 10 so as to restrict the feeding of the wire member 10 and to cut the wire member 10 together with the wire feeder 21 in a wire arranging step described later. Further, the tension clamper 23 has a function of clamping the wire member 10 at a predetermined pressure to give a predetermined tension when the wire member 10 is fed out.

The bonder head 24 is configured to perform bonding using, for example, both thermocompression bonding and ultrasonic waves.
0 is welded to the electrode 2 (wire bonding). Further, the bonder head 24 has a function of temporarily fixing the ball portion 11 formed at the tip of the member 10 to the wire on the semiconductor chip 1 by pressing the ball portion 11 onto the semiconductor chip 1.

Further, the torch 26 is formed of, for example, a discharge electrode, and has a function of melting the end of the wire member 10 at the tip of the wire feeder 21 by discharge energy to form the ball portion 11. Subsequently, using the wiring device 20 having the above configuration, the semiconductor device 40A is used.
A method of manufacturing the semiconductor device (see FIG. 8) will be described with reference to FIGS. In addition, at the tip of the wire member 10,
It is assumed that the ball portion 11 is formed in advance.

To manufacture the semiconductor device 40A, first, the semiconductor chip 1 is mounted on the wiring device 20. The circuit and the electrodes 2 are formed on the surface of the semiconductor chip 1 in another process. On the upper surface of the semiconductor chip 1, an external connection terminal forming position 3 where external connection terminals are formed (see FIG. 1).
See). When the semiconductor chip 1 is mounted on the wiring device 20, the wire feeder 21 is moved to a position where the ball portion 11 faces the external connection terminal forming position 3 of the semiconductor chip 1 by a driving device not shown (the state shown in FIG. 2). ).

When the ball portion 11 faces the external connection terminal forming position 3 as described above, the clamp head 25 is subsequently moved downward by the driving device, and the clamp head 25 is moved downward.
Presses the ball portion 11 against the external connection terminal forming position 3 of the semiconductor chip 1. Thereby, the ball portion 11 is temporarily fixed to the semiconductor chip 1 (temporary fixing step). When the ball portion 11 is temporarily fixed by the clamp head 25 as described above, subsequently, the wire feeder 21 moves while paying out the wire member 10 toward a predetermined electrode 2 formed on the semiconductor chip 1, and moves the electrode 2. It stops at a position where it has passed slightly (a state shown in FIG. 3). As a result, the wire member 10 is pulled out from the external connection terminal formation position 3 to the electrode 2 (a wire drawing step of drawing out).

When the wire member 10 is fed out by the wire feeder 21 as described above, since the tension clamper 23 clamps the wire member 10 with an appropriate clamping force, the wire member 10 may not be loosened. Absent. Subsequently, the bonder head 24 is moved downward toward the electrode 2 by the driving device, and as shown in FIG.
The wire member 10 is bonded to the electrode 2. At this time, in the present embodiment, the bonding process is not performed by the wire feeder 21 that feeds out the wire member 10, and the bonding process is performed on the bonder head 24 that is separate from the wire feeder 21. Therefore, the bonding process is wedge bonding.

As is well known, wedge bonding is
The area required for bonding can be reduced as compared with other bonding methods. Therefore, by using wedge bonding as a method for joining the wire member 10 and the electrode 2 as in the present embodiment, the area of the electrode 2 can be reduced, and accordingly, the semiconductor chip 1 with a higher density can be accommodated. It becomes possible.

When the wire member 10 is bonded to the electrode 2 as described above, the wire clamper 22 strongly clamps the wire member 10, and the wire feeder 21 moves in the direction shown by the arrow in FIG. I do. At this time, the bonder head 24 maintains the state where the wire member 10 is pressed. Therefore, as shown in FIG. 5, the wire member 10 moves the wire feeder 21 so that the wire member 10 is positioned outside the bonder head 24 (i.e.,
Cutting is performed at a position between the bonder head 24 and the wire feeder 21 (the processing described above with reference to FIGS. 4 and 5 is referred to as a wire disposing step).

When the wire arranging step is completed as described above, the torch 26 moves to a position near the cutting position of the wire member 10, and discharges the tip of the wire member 10 by discharging as shown in FIG. Then, a new ball portion 11 to be used in the next bonding process is formed (ball forming step). On the other hand, the semiconductor chip 1 on which the wire members 10 are provided is conveyed to a resin forming apparatus, and a sealing resin 28 is formed on the upper surface of the semiconductor chip 1 (the surface on which the wire members 10 are provided) (resin forming step). .

At this time, at least the bonding position between the wire member 10 and the electrode 2 is sealed by the sealing resin 28, and at least the ball portion 11 is
A resin forming process is performed so as to be exposed from 8. Further, since the ball portion 11 has a configuration exposed from the sealing resin 28, it functions as an external connection terminal when the semiconductor device 40A is mounted on a mounting board (not shown).

In this embodiment, as shown in FIG. 7, a potting method using a nozzle 27 is used as a method for forming the sealing resin 28. In the potting method, the sealing resin 28 can be formed at a low cost. However, in order to form the sealing resin 28 with higher accuracy, a method of forming the sealing resin 28 by a transfer molding method using a mold is required. May be adopted. By obtaining the manufacturing steps described above, the semiconductor device 40A shown in FIG. 8 is completed.

As described above, by manufacturing the semiconductor device 40A using the wiring device 20, the wire member 10 integrally formed with the ball portion 11 has a function as an external connection terminal and a function as a wiring. Both functions will be performed by one member. Further, the forming process of the wire member 10 can be performed collectively by using the wiring device 20. Therefore, it is possible to efficiently perform the wiring process on the semiconductor chip 1 and the forming process of the external connection terminal (that is, the forming process of the wire member 10) in a short time.

In addition, since complicated and high-running processes such as a vapor deposition method, a sputtering method, and an etching method which are conventionally used are not required, the cost can be reduced and the process can be simplified. Further, the wire member 10 disposed on the semiconductor chip 1 has a configuration in which one end is bonded to the electrode 2 and the ball 11 which functions as an external connection terminal is integrally formed on the other end. Therefore, there is no need to separately provide pads for forming external connection terminals (for example, bumps) on the semiconductor chip 1 which have been conventionally required. Therefore, the configuration of the semiconductor chip 1 is simplified, downsized, and Cost reduction can be achieved.

Further, since the wiring on the semiconductor chip 1 is routed by the wire member 10, the wire member 10 on the semiconductor chip 1 is more freely routed than the wiring formed on the substrate as in the conventional case. Therefore, the wiring design can be facilitated. Further, in the resin forming step, at least the wire member 1
0 is bonded to the electrode 2 at the sealing resin 2
8, the bonding position can be prevented from being deteriorated, so that the reliability of the wiring structure and the semiconductor device 40A can be improved.

Next, semiconductor devices according to second to fifth embodiments of the present invention will be described with reference to FIGS.
In FIGS. 9 to 16, the same components as those of the semiconductor device 40A and the wiring device 20 according to the first embodiment described above with reference to FIGS. Is omitted.

FIGS. 9 and 10 are views for explaining a semiconductor device 40B according to the second embodiment. FIG. 9 shows the semiconductor chip 1 before the sealing resin 28 is formed, and FIG. 10 shows a semiconductor device 40B completed by forming the sealing resin 28. The semiconductor device 40B according to the present embodiment is characterized in that the external connection electrode formation position 3 is provided outside the outer surface 4 of the semiconductor chip 1 and the support member 29 is disposed below the external connection electrode formation position 3. It is assumed that.

The support member 29 has a structure in which resin, metal or ceramic is adhered to the outer surface 4 of the semiconductor chip 1. The support member 29 is connected to the wiring device 20.
Before disposing the wire member 10, the wire member 10 is formed in advance. As in the present embodiment, the setting position of the external connection electrode formation position 3 is not necessarily limited to the position on the semiconductor chip 1, but may be set outside the semiconductor chip 1. Therefore, even if all the external connection electrode formation positions 3 cannot be set on the semiconductor chip 1 due to the high density, the configuration of the present embodiment can cope with this.

FIGS. 11 and 12 are views for explaining a semiconductor device 40C according to the third embodiment. FIG. 11 shows the semiconductor chip 1 before the sealing resin 28 is formed, and FIG. 12 shows a semiconductor device 40C completed by forming the sealing resin 28. The semiconductor device 40C according to the present embodiment is characterized in that a predetermined portion including at least the ball portion 11 of the wire member 10 extends outside the outer surface 4 of the semiconductor chip 1.

The semiconductor device 40C according to this embodiment has a TA
There is a benefit when implementing in the B method. That is, in the semiconductor device 40C according to the present embodiment, since the wire member 10 is provided so as to extend outside the outer surface 4 of the semiconductor chip 1, the wire member 10 is formed of a copper foil (wiring) in a conventional TAB. ) Has a function equivalent to). Therefore, the conventional T
In the case of the AB system, the semiconductor device (or semiconductor chip) needs to be face-down bonded on a thin copper foil extending into an opening formed in the resin film. Mounting can be performed by directly bonding the ball portion 11 to the patterned wiring. As a result, the mounting process can be easily performed as compared with the related art.

FIGS. 13 and 14 are views for explaining a semiconductor device 40D according to the fourth embodiment. FIG. 13 shows the semiconductor chip 1 before the sealing resin 28 is formed, and FIG. 14 shows a semiconductor device 40D completed by forming the sealing resin 28. The semiconductor device 40D according to the present embodiment includes a covering wire 12 as a wire member.
Is used. The covered wire 12 is obtained by covering an outer peripheral portion of a wire body made of a conductive metal with an insulating material.

As described above, by using the covered wire 12 whose outer peripheral portion is covered with the insulating material, the structure shown in FIG.
As shown in FIG. 14 (B), even if the covered wires 12 are crossed in a state of being in direct contact, no short circuit occurs. That is, according to the configuration of the present embodiment, the covered wires 12 can be directly crossed with each other, and therefore, the degree of freedom of drawing the covered wires 12 (wire members) can be increased.

FIGS. 15 and 16 are views for explaining the semiconductor devices 40E and 40F of the fifth and sixth embodiments. The semiconductor device 4 according to the sixth embodiment shown in FIG.
0F is the semiconductor device 4 according to the fifth embodiment shown in FIG. 15 only in that the coated wire 12 is used as a wire member.
0E. Semiconductor device 40 according to each embodiment
E, 40F is the wire member 16 or the coated wire 1
The portion exposed from the second sealing resin 28 is formed long so that the wire member 16 and the covering wire 12 can be displaced with respect to the semiconductor chip 1.

As is well known, the silicon substrate as the base material of the semiconductor chip 1 and the mounting substrate on which the semiconductor devices 40E and 40F are mounted have different coefficients of thermal expansion. Therefore, if a heat treatment is performed during mounting, a difference in thermal expansion occurs between the semiconductor chip 1 and the mounting substrate. Therefore, if there is no structure that absorbs the stress caused by the difference in thermal expansion, damage such as cracks may occur at the joint position between the semiconductor devices 40E and 40F and the mounting board.

However, with the configuration in which the wire member 16 and the covering wire 12 can be displaced with respect to the semiconductor chip 1 as in the present embodiment, the stress generated due to the difference in thermal expansion is reduced. Or it is absorbed by the displacement of the covering wire 12. Therefore, according to the semiconductor devices 40E and 40F according to the present embodiment, mounting reliability can be improved.

In each of the embodiments described above, examples have been described in which the present invention is applied to a semiconductor device and a wiring device used for manufacturing the semiconductor device. However, the application of the present invention is not limited to the semiconductor device. The present invention can be applied to various substrates having wirings and external connection terminals and methods for manufacturing the same, and various electronic devices and methods for manufacturing the same.

[0050]

According to the present invention as described above, the following various effects can be realized. According to the first aspect of the present invention, the process of forming the external connection terminal and the wiring can be performed collectively, and the process of forming the wiring on the substrate and the process of forming the external connection terminal can be efficiently performed in a short time. Becomes

In addition, since complicated and high running cost processes such as vapor deposition, sputtering, and etching used in the conventional process of forming external connection terminals and wiring are not required, cost reduction and simplification of the process can be achieved. Can be. According to the second and third aspects of the present invention,
It is not necessary to separately provide a pad for forming an external connection terminal on the substrate (semiconductor element), and the configuration can be simplified, downsized, and reduced in cost.

Further, since the wiring on the substrate (semiconductor element) is performed by the wire member, the degree of freedom of the wiring of the wire member on the substrate (semiconductor element) is high, so that the wiring design can be facilitated. . Further, according to the invention described in claim 4, it is possible to cross the wire members in a state where they are directly in contact with each other, and it is possible to increase the degree of freedom of drawing the wire members.

According to the fifth aspect of the present invention, even if there is a difference in thermal expansion between the mounting substrate on which the semiconductor device is mounted and the semiconductor element, the stress generated due to the difference in thermal expansion. Is absorbed by the displacement of the wire member, so that the mounting reliability can be improved. According to the invention of claim 6, the process of forming the external connection terminal (ball portion) and the wiring can be performed collectively, and the manufacturing process can be simplified. Further, since complicated and high running cost processes such as vapor deposition, sputtering, and etching used in the conventional process of forming external connection terminals and wirings are not required, cost can be reduced.

Further, according to the present invention, the area required for bonding can be reduced, and the area of the pad can be reduced, so that it is possible to cope with a semiconductor device with a higher density.

[Brief description of the drawings]

FIG. 1 is a perspective view illustrating a wiring device according to an embodiment of the present invention.

FIG. 2 is a diagram for explaining a method of manufacturing a semiconductor device according to one embodiment of the present invention, and is a diagram illustrating a temporary fixing step.

FIG. 3 is a view for explaining the method for manufacturing the semiconductor device according to one embodiment of the present invention, and is a view showing a wire drawing step.

FIG. 4 is a diagram for explaining the method for manufacturing the semiconductor device according to one embodiment of the present invention, and is a diagram illustrating a wire disposing step (part 1).

FIG. 5 is a view illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention, and is a view illustrating a wire disposing step (part 2).

FIG. 6 is a view for explaining the method for manufacturing the semiconductor device according to one embodiment of the present invention, and is a view showing a ball portion forming step.

FIG. 7 is a diagram for explaining the method for manufacturing the semiconductor device according to one embodiment of the present invention, and is a diagram illustrating a resin forming step.

FIG. 8 is a diagram illustrating a semiconductor device according to a first embodiment of the present invention.

FIG. 9 is a view for explaining a semiconductor device according to a second embodiment of the present invention (part 1);

FIG. 10 is a view for explaining a semiconductor device according to a second embodiment of the present invention (part 2);

FIG. 11 is a view for explaining a semiconductor device according to a third embodiment of the present invention (part 1);

FIG. 12 is a view for explaining a semiconductor device according to a third embodiment of the present invention (part 2);

FIG. 13 is a view for explaining a semiconductor device according to a fourth embodiment of the present invention (part 1);

FIG. 14 is a view for explaining a semiconductor device according to a fourth embodiment of the present invention (part 2);

FIG. 15 is a diagram illustrating a semiconductor device according to a fifth embodiment of the present invention.

FIG. 16 is a diagram illustrating a semiconductor device according to a sixth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Electrode 3 External connection electrode formation position 4 Outer side surface 10 Wire member 11 Ball part 12 Covering wire 13 Exposed part 20 Wiring device 21 Wire feeder 22 Wire clamper 23 Tension clamper 24 Bonder head 25 Clamp head 26 Torch 27 Nozzle 28 Sealing Stop resin 29 Support member 40A-40F Semiconductor device

Claims (7)

[Claims] 1. A ball forming part for forming a ball part on a wire member, a clamp part for pressing the ball forming part onto a substrate and clamping the same, and a state where the ball part is clamped by the clamp part, A wiring device, comprising: a wire member lead-out portion that pulls out the wire member to an electrode on the substrate; and a bonding tool portion that bonds the wire member to the electrode and cuts the wire member. 2. A substrate on which electrodes are formed, and an external connection terminal disposed on the electrode forming side surface of the substrate and having one end bonded to the electrode and integrally formed with the other end. A wiring structure, comprising: a wire member formed with a ball portion functioning as a sealing member; and a sealing resin for fixing the wire member. 3. A semiconductor element having electrodes formed thereon, and disposed on a side face of the semiconductor element on which the electrodes are formed, one end of which is bonded to the electrodes and the other end of which is integrally formed with the electrodes. A semiconductor device, comprising: a wire member formed with a ball portion functioning as a connection terminal; and a sealing resin for fixing the wire member. 4. The semiconductor device according to claim 3, wherein a covered wire is used as said wire member. 5. The semiconductor device according to claim 3, wherein a portion of the wire member exposed from the sealing resin is configured to be displaceable. 6. A temporary fixing step of temporarily fixing a ball portion serving as an external connection terminal previously formed at a tip portion of a wire member to a predetermined external connection electrode forming position of a semiconductor element, and attaching the wire member to the external connection electrode. A wire drawing step of drawing from a formation position to an electrode formed on the semiconductor element, wire bonding the wire member to the electrode, and a wire arranging step of cutting the wire member after the wire bonding; and And a resin forming step of forming a sealing resin to be fixed. 7. The method of manufacturing a semiconductor device according to claim 6, wherein wedge bonding is used as a wire bonding method performed in the wire arranging step.