JP2000138175A - Heat insulating member for heating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heat insulating member for a heating device suitable for a heat insulating member for a semiconductor wafer heating device which does not contaminate a heating furnace and does not deform during using, and prolongs service and is low in costs. SOLUTION: This heat insulating member for a heating device has a plurality of props 2 composed of a silicon carbide quality material, and a plurality of thin plate-like bodies 5 composed of a silicon carbide quality material, provided with one through hole 3 through which the prop 2 passes in a joint state and a freely inserting hole 4 into which the prop 2 is freely inserted. The thin plate- like body 5 is jointed to the prop at one position via the through hole 3, whereby the thin plate-like body 5 is held against the prop 2 at intervals.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat insulating member for a heat treatment apparatus, and more particularly, to a heat insulating member for a heat treatment apparatus which is free from contamination in the heat treatment apparatus, has a long life and is inexpensive, and is particularly suitable for a semiconductor wafer heat treatment apparatus.

[0002]

2. Description of the Related Art In a number of heat treatment processes such as oxidation and diffusion of semiconductor devices, a plurality of semiconductor wafers are mounted on a semiconductor wafer boat, and the semiconductor wafer boat is housed in a heat treatment apparatus and heated to perform heat treatment.

For example, in a heat treatment using a vertical heat treatment furnace, a vertical semiconductor wafer boat accommodated in a high-temperature vertical heat treatment furnace is used to prevent heat from the vertical heat treatment furnace from escaping outside the processing furnace. It is arranged near the opening of the processing furnace, and is placed on a heat insulating member for a semiconductor wafer heat treatment apparatus, a part of which is exposed to a work room at room temperature.

As a heat insulating member for a conventional semiconductor wafer heat treatment apparatus, as described in Japanese Patent Application Laid-Open No. 3-114223, a quartz glass cylindrical member is used, or such a quartz glass cylindrical member is used. What was filled with glass wool in the shape thing was used. However, such a heat insulating member for a semiconductor wafer heat treatment apparatus made of quartz glass may deform semiconductor wafers due to the weight of a vertical semiconductor wafer boat and heat from a processing furnace, making it difficult to use for a long time. Further, in the latter case where the glass cylinder is filled with glass wool, there is a possibility that the inside of the processing furnace may be contaminated by dust generated from the glass wool.

The heat insulating member for a semiconductor wafer heat treatment apparatus described in Japanese Patent Publication No. 6-5666 is joined to four pillars at a position where a disk-shaped thin plate is deviated, and the material thereof is Even with quartz glass or silicon carbide, under higher temperature heat treatment conditions, the shielding plate may be deformed.

Further, as shown in FIG. 5, a heat insulating member 31 for a conventional reaction sintered SiC semiconductor wafer heat treatment apparatus.
In order to avoid deformation or cracking due to thermal effects during use, three shielding plates 32 made of reactive sintered SiC and a groove 33 into which the shielding plates 32 are detachably fitted are formed. , A bottom plate 36 to which one end 35 of the support 34 is joined, and a top plate 38 to which the other end 37 is joined and on which a vertical wafer boat is placed.

In the conventional heat insulating member 31 for a semiconductor wafer heat treatment apparatus having such a structure, the shielding plate 32 is
In addition, dust is generated when attaching / detaching from the position 4, and the cost for forming the groove 33 is increased.

[0008]

Therefore, there is a need for a heat insulating member for a heat treatment apparatus which is free from contamination and deformation during use, has a long life, is inexpensive, and is suitable for a heat insulating member for a semiconductor wafer heat treatment apparatus. An object of the present invention is to provide a heat-insulating member for a heat-treating apparatus suitable for a heat-insulating member for a semiconductor wafer heat-treating apparatus, which is free from contamination of a heat-treating furnace and deformation during use, has a long service life, and is inexpensive.

[0009]

Means for Solving the Problems In order to achieve the above object, the invention of claim 1 of the present application is directed to a plurality of pillars made of a silicon carbide material, and the pillars penetrate in a joined state.
A plurality of thin plates made of a silicon carbide material provided with a plurality of through-holes and play insertion holes into which the posts are loosely inserted, and the thin plate is provided at one position on the support via the through-holes. The heat-insulating member for a heat treatment apparatus is characterized in that the thin plate-shaped body is held at a certain distance from the column by joining with the support.

[0010] In the invention of claim 2 of the present application, the plurality of adjacent thin plate-like bodies are joined to different columns, respectively, and the heat-insulating member for a heat treatment apparatus according to claim 1 is summarized. And

According to the third aspect of the present invention, the through-holes of the above-mentioned thin plate are displaced by one interval from the through-holes of the adjacent thin plate, and a plurality of thin plate and a plurality of columns are joined. The gist is a heat insulating member for a heat treatment apparatus according to claim 1 or 2, wherein the position is sequentially displaced.

In the invention of claim 4 of the present application, the through-hole and the play insertion hole of the thin plate are positioned equidistant from the center point of the thin plate, and the joining position of the plurality of thin plates and the plurality of columns is set. Are sequentially displaced, and the gist is a heat insulating member for a heat treatment apparatus according to any one of claims 1 to 3.

[0013] In the invention of claim 5 of the present application, the thin plate-shaped member is disc-shaped, and the through-holes and the loose insertion holes are positioned at equal intervals on concentric circles of the thin plate-shaped member. The heat insulating member for a heat treatment apparatus according to claim 1 or 3, wherein a joining position of the support and the plurality of columns is sequentially displaced.

According to the sixth aspect of the present invention, the cross section of the support is circular, and the play insertion hole formed in the thin plate is circular, and the diameter of the play insertion hole is twice the diameter of the support. The gist is a heat insulating member for a heat treatment apparatus according to claim 4 or 5, characterized in that:

In the invention according to claim 7 of the present application, the diameter of the play insertion hole is at least 1.4 times the diameter of the column, and the diameter of the play insertion hole is at least 1.4 times the diameter of the support. The gist is that it is a heat insulating member.

According to the invention of claim 8 of the present application, the three or more columns are erected on the bottom plate at one end and fixed to the top plate on which the member for the vertical semiconductor wafer heat treatment apparatus is mounted at the other end. The heat insulating member for a heat treatment apparatus according to any one of claims 1 to 7, wherein the thin plate-shaped body is a heat insulation member for a vertical semiconductor wafer heat treatment apparatus having three or more sheets. And

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a heat insulating member for a heat treatment apparatus according to the present invention will be described with reference to the drawings.

As shown in FIG. 1, a heat insulation member for a heat treatment apparatus, for example, a heat insulation member for a semiconductor wafer heat treatment apparatus (hereinafter referred to as a heat insulation member) 1 is made of silicon-impregnated silicon carbide (Si--SiC). A plurality of, for example, three pillars 2a, 2b, 2c, one through hole 3a through which the pillar 2 is joined and a plurality of, for example, two play insertion holes 4a1, 4a2 into which the pillar 2 is loosely inserted. Are provided, and a plurality of, for example, three thin plate-shaped members 5a, 5 made of silicon carbide are provided.
b, 5c. Further, a bottom plate 7 having the same outer diameter as the thin plate member 5 and firmly joined to the lower end portion 6 of the column 2 and erected, and having the same shape as the bottom plate 7, when the heat insulating member 1 is used. A vertical semiconductor wafer boat is mounted thereon, and has a top plate 9 firmly joined to the upper end 8 of the column 2.

The load of the vertical semiconductor wafer boat on which semiconductor wafers are mounted is received by the top plate 9, the support 2, and the bottom plate 7, and the structure is such that the thin plate 5 is not applied at all.

On the heat insulating member 1, a CVD-SiC film is formed on the entire surface.

The thin plate member 5 has a disk shape. The thin plate member 5 has a concentric circle interval, for example, an equal interval (center angle of 120 °) and a single through hole 3 and a plurality of through holes. For example, two play insertion holes 4 are provided.

The through hole 3 has a circular shape and a diameter d 1 slightly larger than the diameter D of the column 2, and the loose insertion hole 4 has a circular shape and a diameter d 2 which is not more than twice the diameter D of the column 2. When a CVD-SiC film is formed on the heat insulating member 1, the loose insertion hole 4
Is 1.4 times or more the diameter D of the column 2.

The diameter d 2 of the play insertion hole 4 is determined by the diameter D of the support 2.
The reason why the heat shielding effect is set to be twice or less is to keep the heat shielding effect in good condition, and if it exceeds twice, a heat leak occurs through the play insertion hole 4 and the heat shielding effect is reduced. The reason why the diameter d2 of the play insertion hole 4 is set to be 1.4 times or more the diameter D of the column 2 is that the CVD-SiC film is sufficiently formed on the side wall of the play insertion hole 4 so that the base material is exposed and the SiC film is peeled off. This is in order to prevent the occurrence of.

The structure for holding the thin plate 5 on the column 2 is formed through one through hole 3 provided in the thin plate 5.
One sheet-like body 5 and one post 2 are joined at one joining position 10a by a joining agent, and a plurality of adjacent sheet-like bodies 5 are attached to different posts 2 respectively. Different joining positions 1 sequentially displaced by intervals (120 °)
0b and 10c are joined.

The heat insulating member 1 having the above-described structure is
It is manufactured by a process flow as shown in FIG. In addition, the molded body of each component of the heat insulating member 1 will be described with the same reference numeral.

That is, a kneading step of kneading the raw material SiC powder, carbon, and a binder, a granulating step of granulating them, a column forming body 2, a thin plate-like body forming body 5, a bottom plate A molding step of forming the molded body 7 and the top plate molded body 9;
A step of calcining these molded bodies 2, 5, 7, 9; shaping the calcined molded body 2, the bottom plate molded body 7 and the top plate molded body 9; And a processing step of forming a play insertion hole 4, a bottom plate 7 at the lower end 6, a top plate 9 at the upper end 8, and a through-hole 3 using an adhesive made of an organic binder and SiC powder. A bonding step of bonding the thin plate-like body 5 to the support column 2 via an interface, an impregnation step of impregnating the bonded and assembled heat insulating member 1 with Si, and blowing out the surface of the heat insulating member 1 during the Si impregnation. A polishing step of polishing Si and a CV are applied to the heat-insulated member 1 having a polished and flat surface.
It is manufactured by a SiC film forming step of forming a D-SiC film.

Next, a method of using the heat insulating member 1 for a semiconductor wafer heat treatment apparatus of the present embodiment will be described.

The heat insulating member 1 is mounted on the elevating device 23 of the vertical heat treatment furnace 22 having the heater 21. Thereafter, a vertical wafer boat 25 on which a large number of semiconductor wafers 24 are mounted
Is placed on the heat-insulating member 1 via the top plate 9, and the vertical wafer boat 25 and the heat-insulating member 1 are further attached to the quartz glass core tube 26.
Cover with.

Next, the elevating device 23 is operated, and the vertical wafer boat 25 stored in the quartz glass furnace core tube 26 is operated.
And the heat insulating member 1 are loaded into the vertical heat treatment furnace 22.

In this state, the vertical wafer boat 25 is housed in the substantially central portion 27 of the vertical heat treatment furnace 22, and the opening 28 of the vertical heat treatment furnace 22 is closed by the heat insulating member 1. Thereafter, the heat treatment of the semiconductor wafer 24 is performed by energizing the heater 21.

In this heat treatment step, the vertical heat treatment furnace 2
The inside of the furnace 2 is maintained at a high temperature of about 1400 ° or more, but the heat insulation is effectively achieved by the heat insulating member 1 composed of a plurality of thin plate-like bodies 5, so that the inside of the vertical heat treatment furnace 22 is maintained at a high temperature. Moreover, since the heat insulating member 1 is a silicon carbide material and has excellent heat resistance, it can be used for a long time without being deformed even when exposed to a high temperature for a long time. Further, by displacing the respective joining positions 10 of the thin plate-shaped members 5, it is possible to balance the thermal strain received by the heat insulating member 1. Are not aligned in a straight line along the same column 2a, and a heat leak along one column 2 due to a high-temperature gas flow (f) as shown by a dotted line in FIG. Heat leaks that occur through the play holes 4 when heated are minimized.

Further, since the diameter of the play insertion hole is not more than twice the diameter of the column, heat leakage can be effectively suppressed.

The upper portion 29 of the heat insulating member 1 is exposed to a high temperature, and the lower portion 30 is in contact with room temperature.
And the sheet-like body 5 thermally expands, but one sheet-like body 5
The joint between the column 2 and the thin plate 5 is made at only one place, and the thermal expansion of the column 2 and the thin plate 5 is
, And no thermal stress is generated between the support 2 and the thin plate 5, and the support 2 and the thin plate 5 do not crack or have a long life.

Furthermore, since heat insulating glass wool is not used for the heat insulating member 1 and the structure is such that the thin plate-like body is not attached to and detached from the groove of the column, no cost for forming the groove is required.
When attaching and detaching the thin plate-like body, the inside of the vertical heat treatment furnace 22 can be kept clean without polluting the inside of the vertical heat treatment furnace by dust.

In the above embodiment, the heat insulating member for a semiconductor wafer heat treatment apparatus has been described. However, the heat insulation member for a heat treatment apparatus according to the present invention is not limited to the heat insulation member for a semiconductor wafer heat treatment apparatus.

The heat insulating member for a heat treatment apparatus includes not only a vertical type but also a horizontal type. Further, the vertical heat insulating member having three or more columns and having a circular bottom plate, a top plate, and a thin plate joined to the columns has been described, but the heat insulating member according to the present invention has a shape of a heat treatment furnace. Depending on the situation, the thin plate may be rectangular, and it is not always necessary to form a CVD-SiC film on the surface of the heat insulating member. In addition, the silicon carbide material forming the base material is Si-SiC by reaction sintering.
Not limited to this, self-sintered SiC using B, C, or the like as a sintering aid may be used. Further, when the heat insulating member is a horizontal type and a load such as a boat for a semiconductor wafer heat treatment apparatus is not applied to the heat insulating member, the heat insulating member may have two columns.

[0037]

According to the heat-insulating member for a heat-treating apparatus according to the present invention, there is no contamination of the heat-treating furnace and no deformation during use, a long life, a low cost, and a heat-insulating member particularly suitable for a heat-insulating member for a semiconductor wafer heat-treating apparatus. Can be provided. In addition, by displacing the joining positions of a plurality of adjacent thin plate-like bodies, it is possible to balance the thermal strain applied to the heat insulating member.

Furthermore, since one support rod loosely inserts the play insertion hole and the through hole always penetrates in the joined state, the heat leak is shielded at the joint position, and the heat leak is minimized. Since the diameter of the play insertion hole is equal to or less than twice the diameter of the column, heat leakage is effectively suppressed. If the diameter of the play insertion hole is 1.42 times or more the diameter of the support, the CVD-SiC film can be completely formed.

Further, in one sheet-like body, the column and the sheet-like body are joined at one place, the thermal expansion of the column and the sheet-like body is released by the loose fitting hole, and the gap between the pillar and the sheet-like body is formed. Does not generate thermal stress, does not generate cracks or the like in the columns and thin plate-shaped members, and has a long life.

[Brief description of the drawings]

FIG. 1 is a perspective view of a heat insulating member for a semiconductor wafer heat treatment apparatus according to an embodiment of the present invention.

FIG. 2 is a side view of a heat insulating member for a semiconductor wafer heat treatment apparatus according to one embodiment of the present invention.

FIG. 3 is an explanatory view showing a use state of a heat insulating member for a semiconductor wafer heat treatment apparatus according to one embodiment of the present invention.

FIG. 4 is a flowchart of a manufacturing process of a heat insulating member for a semiconductor wafer heat treatment apparatus according to an embodiment of the present invention.

FIG. 5 is a side view of a conventional heat insulating member for a semiconductor wafer heat treatment apparatus.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 heat insulating member for semiconductor wafer heat treatment apparatus 2 support 3 through hole 4 play hole 5 thin plate 6 lower end 7 bottom plate 8 upper end 9 top plate 10 bonding position

Claims (8)

[Claims] 1. A silicon carbide-based material provided with a plurality of pillars made of a silicon carbide-based material, one through-hole penetrating the pillars in a joined state, and a play insertion hole into which the pillars are loosely inserted. A plurality of sheet-like bodies, and by joining the sheet-like bodies to the support at one place via the through holes, the sheet-like bodies are provided at intervals on the support and held. Heat insulation equipment for heat treatment equipment. 2. The heat insulating member for a heat treatment apparatus according to claim 1, wherein the plurality of adjacent thin plate members are joined to different columns. 3. The through-hole of the above-mentioned thin plate-like body is positioned so as to be displaced by one interval from the through-hole of an adjacent thin plate-like body, and the joining positions of a plurality of thin plate-like bodies and a plurality of columns are sequentially shifted. The heat insulating member for a heat treatment apparatus according to claim 1 or 2, wherein: 4. The method according to claim 1, wherein the through hole and the play insertion hole of the thin plate are positioned equidistant from a center point of the thin plate, and the joining positions of the plurality of thin plates and the plurality of columns are sequentially displaced. The heat insulating member for a heat treatment apparatus according to any one of claims 1 to 3, wherein 5. The thin plate-shaped member has a disk shape, the through-holes and the loose insertion holes are positioned at equal intervals on concentric circles of the thin plate-shaped member, and a plurality of thin plate-shaped members and a plurality of columns are formed. The heat insulating member for a heat treatment apparatus according to claim 1, wherein the joining positions are sequentially displaced. 6. A cross section of the support is circular, and a play insertion hole formed in the thin plate is circular, and the diameter of the play insertion hole is not more than twice the diameter of the support. The heat insulating member for a heat treatment apparatus according to claim 4 or 5, wherein 7. The diameter of the play insertion hole is 1.4 times the diameter of the column.
The heat insulating member for a heat treatment apparatus according to any one of claims 4 to 6, wherein the heat insulating member is twice or more. 8. The three or more pillars are erected on a bottom plate at one end, and are fixed to a top plate on which a member for a vertical semiconductor wafer heat treatment apparatus is mounted at the other end. The heat insulating member for a heat treatment apparatus according to any one of claims 1 to 7, wherein the heat insulation member is a heat treatment apparatus for a vertical semiconductor wafer heat treatment apparatus having three or more sheets.