JP2000133465A5 - - Google Patents

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Publication number
JP2000133465A5
JP2000133465A5 JP1998310199A JP31019998A JP2000133465A5 JP 2000133465 A5 JP2000133465 A5 JP 2000133465A5 JP 1998310199 A JP1998310199 A JP 1998310199A JP 31019998 A JP31019998 A JP 31019998A JP 2000133465 A5 JP2000133465 A5 JP 2000133465A5
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JP
Japan
Prior art keywords
light emitting
emitting layer
layer
transparent conductive
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1998310199A
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Japanese (ja)
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JP2000133465A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP10310199A priority Critical patent/JP2000133465A/en
Priority claimed from JP10310199A external-priority patent/JP2000133465A/en
Priority to PCT/US1999/021915 priority patent/WO2000027169A1/en
Priority to CN99812897A priority patent/CN1325607A/en
Priority to AU62579/99A priority patent/AU750438B2/en
Priority to EP99949780A priority patent/EP1135973B1/en
Priority to US09/787,938 priority patent/US6479941B1/en
Priority to CA002349521A priority patent/CA2349521A1/en
Priority to DE69917065T priority patent/DE69917065T2/en
Priority to BR9914849-8A priority patent/BR9914849A/en
Priority to KR1020017005368A priority patent/KR20010080346A/en
Publication of JP2000133465A publication Critical patent/JP2000133465A/en
Publication of JP2000133465A5 publication Critical patent/JP2000133465A5/ja
Withdrawn legal-status Critical Current

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Description

【特許請求の範囲】
【請求項1】 さ方向に連続して延在する透明基材、
記透明基材の背面に配置された透明導電層、
記透明導電層の背面に配置され、上記透明導電層の幅方向寸法よりも小さな幅方向寸法を有する発光層、
記発光層の背面に配置された背面電極、および
記透明導電層の背面の発光層未配置部分に配置された少なくとも1つのバスであって、上記透明導電層の幅方向寸法よりも小さな幅方向寸法を有し、かつ、上記発光層および背面電極とは電気的に接続されていないバス
を有してなるエレクトロルミネッセンス素子において、
前記透明導電層、前記発光層、前記背面電極および前記バスは、前記透明基材の長さ方向に沿って連続して延在することを特徴とする素子。
【請求項2】 前記発光層は、
トリックス樹脂を含んでなり、透明導電層側に配置された透明な支持層と、
縁体物質を含んでなり、背面電極側に配置された絶縁層と、
持層および絶縁層の両方の層に埋設された発光粒子を含んでなる発光粒子層とからなる、請求項1に記載のエレクトロルミネッセンス素子。
【請求項3】 発光粒子層は、発光粒子の粒子径と実質的に同じ厚さを有する塗膜である、請求項2に記載のエレクトロルミネッセンス素子。
【請求項4】 透明な支持層のマトリックス樹脂は、エポキシ樹脂および高誘電率ポリマーからなる群から選択される、請求項2に記載のエレクトロルミネッセンス素子。
【請求項5】 レクトロルミネッセンス素子の製造方法において、
記透明導電層が一方の表面に配置された前記透明基材を用意し、
記透明導電層の上に、前記透明導電層の幅方向寸法よりも小さな幅方向寸法を有する様に、前記発光層を配置し、発光層付き基材を形成し、
記発光層付き基材の前記透明導電層上の、前記発光層が配置されていない残りの露出部分に、前記透明基材の長さ方向に沿って、その露出部分の巾方向寸法よりも小さな幅方向寸法を有するマスキングを配置し、
記発光層付き基材の上に導電性材料を適用し、前記発光層および背面電極と、前記マスキングの介在により、または、前記マスキングが除去された発光層未配置部分の介在により、電気的に接続されていない前記バスと、前記背面電極とを形成する、
テップを含んでなる製造方法。
【請求項6】 L素子の製造方法において、
記透明導電層が一方の表面に積層された、前記透明基材を用意し、
記透明導電層上の、前記バスを形成するバス形成部分を被覆する様に、前記透明基材の長さ方向に沿ってマスキングを配置し、前記透明導電層上にそのマスキングが配置されたバス形成部分と、そのマスキングが配置されていないマスキング未配置部分とを形成し、
記透明導電層上に上記マスキング未配置部分に、塗布操作により前記発光層を配置し、発光層付き基材を形成し、
記発光層付き基材の上に導電性材料を適用し、上記発光層の上に、導電性材料からなる前記背面電極を形成し、上記マスキングの一部または全部を除去して露出させたバス形成部分に、導電性材料を適用し、前記発光層および背面電極と、前記マスキングの介在により、または前記マスキングが除去された発光層未配置部分の介在により、電気的に接続されていない前記バスと、前記背面電極とを形成する、テップを含んでなる製造方法。
[Claims]
[Claim 1] LongA transparent substrate that extends continuously in the vertical direction,
UpA transparent conductive layer placed on the back of the transparent substrate,
UpA light emitting layer which is arranged on the back surface of the transparent conductive layer and has a width direction dimension smaller than the width direction dimension of the transparent conductive layer.
UpBack electrode located on the back of the light emitting layer, and
UpOn the back of the transparent conductive layer where the light emitting layer is not placedPlacedAt least one busA bus having a width direction dimension smaller than the width direction dimension of the transparent conductive layer and not electrically connected to the light emitting layer and the back electrode.,
In the electroluminescence element having
An element characterized in that the transparent conductive layer, the light emitting layer, the back electrode, and the bath extend continuously along the length direction of the transparent base material.
2. The light emitting layer is
MaA transparent support layer containing Trix resin and arranged on the transparent conductive layer side,
AbsoluteAn insulating layer containing marginal material and placed on the back electrode side,
SupportThe electroluminescence device according to claim 1, further comprising a luminescent particle layer containing luminescent particles embedded in both a holding layer and an insulating layer.
3. The electroluminescence device according to claim 2, wherein the luminescent particle layer is a coating film having substantially the same thickness as the particle size of the luminescent particles.
4. The electroluminescence device according to claim 2, wherein the matrix resin of the transparent support layer is selected from the group consisting of an epoxy resin and a high dielectric constant polymer.
5. DIn the method of manufacturing a lectroluminescence element,
BeforeThe transparent base material on which the transparent conductive layer is arranged on one surface is prepared.
BeforeThe light emitting layer is arranged on the transparent conductive layer so as to have a width direction dimension smaller than the width direction dimension of the transparent conductive layer to form a base material with a light emitting layer.
UpOn the transparent conductive layer of the base material with the light emitting layer, the remaining exposed portion where the light emitting layer is not arranged is smaller than the width direction dimension of the exposed portion along the length direction of the transparent base material. Place a masking with widthwise dimensions,
UpThe conductive material is applied on the base material with the light emitting layer, and electrically by the intervention of the light emitting layer and the back electrode and the masking, or by the intervention of the light emitting layer unarranged portion from which the masking is removed. Forming the unconnected bus and the back electrode.
SuA manufacturing method that includes a tep.
6. EIn the manufacturing method of L element,
BeforeThe transparent base material in which the transparent conductive layer is laminated on one surface is prepared.
BeforeThe masking is arranged along the length direction of the transparent base material so as to cover the bus forming portion forming the bus on the transparent conductive layer, and the masking is arranged on the transparent conductive layer. Forming a formed portion and a non-masked portion where the masking is not arranged,
BeforeThe light emitting layer is arranged on the transparent conductive layer by a coating operation on the unmasked portion to form a base material with a light emitting layer.
UpA bath in which a conductive material is applied on a base material with a light emitting layer, the back electrode made of the conductive material is formed on the light emitting layer, and a part or all of the masking is removed to expose the bath. The bus, in which a conductive material is applied to the formed portion, is not electrically connected to the light emitting layer and the back electrode by the intervention of the masking or by the intervention of the light emitting layer unarranged portion from which the masking has been removed. And the back electrode.SuA manufacturing method that includes a tep.

JP10310199A 1998-10-30 1998-10-30 Electroluminescent element and its manufacture Withdrawn JP2000133465A (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP10310199A JP2000133465A (en) 1998-10-30 1998-10-30 Electroluminescent element and its manufacture
KR1020017005368A KR20010080346A (en) 1998-10-30 1999-09-21 Electroluminescent device and method for the production of the same
EP99949780A EP1135973B1 (en) 1998-10-30 1999-09-21 Electroluminescent device and method for the production of the same
CN99812897A CN1325607A (en) 1998-10-30 1999-09-21 Electroluminescent device and method for the production of the same
AU62579/99A AU750438B2 (en) 1998-10-30 1999-09-21 Electroluminescent device and method for the production of the same
PCT/US1999/021915 WO2000027169A1 (en) 1998-10-30 1999-09-21 Electroluminescent device and method for the production of the same
US09/787,938 US6479941B1 (en) 1998-10-30 1999-09-21 Electroluminescent device and method for the production of the same
CA002349521A CA2349521A1 (en) 1998-10-30 1999-09-21 Electroluminescent device and method for the production of the same
DE69917065T DE69917065T2 (en) 1998-10-30 1999-09-21 Electroluminescent element and method for its production
BR9914849-8A BR9914849A (en) 1998-10-30 1999-09-21 Electroluminescent device and process to produce the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10310199A JP2000133465A (en) 1998-10-30 1998-10-30 Electroluminescent element and its manufacture

Publications (2)

Publication Number Publication Date
JP2000133465A JP2000133465A (en) 2000-05-12
JP2000133465A5 true JP2000133465A5 (en) 2005-12-15

Family

ID=18002380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10310199A Withdrawn JP2000133465A (en) 1998-10-30 1998-10-30 Electroluminescent element and its manufacture

Country Status (9)

Country Link
EP (1) EP1135973B1 (en)
JP (1) JP2000133465A (en)
KR (1) KR20010080346A (en)
CN (1) CN1325607A (en)
AU (1) AU750438B2 (en)
BR (1) BR9914849A (en)
CA (1) CA2349521A1 (en)
DE (1) DE69917065T2 (en)
WO (1) WO2000027169A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10121697A1 (en) * 2001-05-04 2002-11-14 Cool Light Gmbh Production of a layer structure made from a transparent material and a luminescent layer for illuminating and displaying images, signs or writing comprises using a dielectric layer formed as a thin foil
GB0110977D0 (en) 2001-05-04 2001-06-27 Vecht Aron Phosphor layers for electroluminescent panels and methods of their manufacture
GB0514642D0 (en) * 2005-07-18 2005-08-24 Contra Vision Ltd Electroluminescent one-way vision panel
JP2009094050A (en) * 2007-09-19 2009-04-30 Fujifilm Corp Light-emitting element or display element, and manufacturing method of them
US8137148B2 (en) * 2009-09-30 2012-03-20 General Electric Company Method of manufacturing monolithic parallel interconnect structure
JP5197653B2 (en) * 2010-03-05 2013-05-15 株式会社クラレ Dispersion-type inorganic EL element, manufacturing method thereof, and manufacturing apparatus of inorganic EL light emitting layer
KR101369805B1 (en) 2012-10-29 2014-03-06 네오뷰코오롱 주식회사 Oled display panel having bus electrode layer
US10663143B2 (en) 2014-10-08 2020-05-26 Consumer Lighting (U.S.), Llc Materials and optical components for color filtering in a lighting apparatus
US10191204B2 (en) 2015-01-06 2019-01-29 GE Lighting Solutions, LLC Materials and lightguides for color filtering in lighting units

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534743A (en) * 1983-08-31 1985-08-13 Timex Corporation Process for making an electroluminescent lamp
WO1988004467A1 (en) * 1986-12-12 1988-06-16 Appelberg Gustaf T Electroluminescent panel lamp and method for manufacturing
DE68923377T2 (en) * 1988-05-31 1996-04-04 Electroluminescent Technologie METHOD FOR PRODUCING AN ELECTROLUMINESCENT LAMP.
US5530318A (en) * 1995-05-24 1996-06-25 Durel Corporation, A Delaware Corporation EL lamp with integral fuse and connector
JPH10335064A (en) * 1997-05-19 1998-12-18 Minnesota Mining & Mfg Co <3M> Electroluminescent element and its manufacture

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