JP2000124435A5 - - Google Patents

Description

[0016]
In the first region 11, the interface with the second region 12 forms a curved surface recessed toward the silicon substrate 1 , and refracts the light incident on the central portion of the separation region 3 more largely. Configured as. That is, as shown in FIG. 2, the angle formed between the surface of the first region 11 (the interface with the second region 12) and the surface of the silicon substrate 1 becomes larger as it approaches the central portion of the separation region 3. The light incident perpendicularly to the silicon substrate 1 is largely refracted toward the central portion of the separation region 3. Accordingly, as shown in FIG. 1, the light incident on the separation region 3 is efficiently refracted toward the channel region at the interface between the first region 11 and the second region 12 and acts as an N-type working as a light receiving pixel. It is led into the diffusion layer 4.

[0018]
3 (a) to 3 (d) are cross-sectional views for explaining steps of the method for manufacturing a solid-state imaging device according to the present invention. In this figure, the same part as FIG. 1 is shown.
(A) First Step P-type impurities such as boron are diffused in the surface region of the N-type silicon substrate 1 to form a P-type diffusion layer 2 to be an element region. Further, P-type impurities are selectively implanted into the P-type diffusion layer 2 to form a plurality of isolation regions 3, and an N-type impurity such as phosphorus is implanted between the isolation regions 3 to form a channel. An N-type diffusion layer 4 to be a region is formed. Subsequently, the surface of the silicon substrate 1 on which the N-type diffusion layer 4 is formed is thermally oxidized to form a gate insulating film 5 made of silicon oxide. Then, a plurality of transfer electrodes 6 made of polycrystalline silicon are formed on the gate insulating film 5, and an interlayer insulating film 7 is formed to cover the transfer electrodes 6.

[0021]
(C) Third step A resist layer 16 is formed on the light-transmissive material layer 15, and the resist layer 16 is patterned along the separation region 3 to form a mask pattern extending along the separation region 3. Form 17. Then, using the mask pattern 17 as a mask, isotropic etching is performed on the light transmitting material layer 15 to expose the surface of the interlayer insulating film 7 in the gap portion of the mask pattern 17. By this isotropic etching, the isolation region 3 is extended along the isolation region 3 onto the interlayer insulating film 7 and has a cross-sectional shape whose width becomes wider on the silicon substrate 1 side, and the surface is silicon. The first region 11 having a curved surface recessed toward the substrate 1 can be formed.

Claims (3)

A semiconductor substrate, a plurality of light receiving pixels disposed on a main surface of the semiconductor substrate with a predetermined gap therebetween, and a light transmissive layer covering the plurality of light receiving pixels and disposed on the one main surface of the semiconductor substrate A protective film, the protective film covers at least the gap portion of the plurality of light receiving pixels, extends along the arrangement of the plurality of light receiving pixels, and forms one main surface of the semiconductor substrate A first region having a surface whose angle increases toward the central portion of the gap portion, and a flat surface covering the first region and having a larger refractive index than the first region; A solid-state imaging device comprising: two regions.   The solid-state imaging device according to claim 1, wherein an interface between the first region and the second region of the protective film forms a curved surface which is concaved and curved toward the semiconductor substrate. Forming a plurality of light receiving pixels on one main surface of the semiconductor substrate with a predetermined gap therebetween; laminating the first light transmitting material to a predetermined film thickness on the semiconductor substrate; Forming a mask pattern extending along the array of the plurality of light receiving pixels, covering the gap portion of the plurality of light receiving pixels, on the first light transmissive material stacked in the film thickness of Etching the first light-transmissive material isotropically according to the mask pattern to form a cross-sectional shape in which the angle formed with one main surface of the semiconductor substrate increases toward the center of the gap ; Covering the first light transmitting material left on the semiconductor substrate, and laminating a second light transmitting resin having a refractive index higher than that of the first light transmitting material. Method of manufacturing a solid-state imaging device