JP2000114599A5 - - Google Patents

Download PDF

Info

Publication number
JP2000114599A5
JP2000114599A5 JP1998288516A JP28851698A JP2000114599A5 JP 2000114599 A5 JP2000114599 A5 JP 2000114599A5 JP 1998288516 A JP1998288516 A JP 1998288516A JP 28851698 A JP28851698 A JP 28851698A JP 2000114599 A5 JP2000114599 A5 JP 2000114599A5
Authority
JP
Japan
Prior art keywords
nitride
growth layer
semiconductor light
emitting device
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998288516A
Other languages
English (en)
Japanese (ja)
Other versions
JP4530234B2 (ja
JP2000114599A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP28851698A priority Critical patent/JP4530234B2/ja
Priority claimed from JP28851698A external-priority patent/JP4530234B2/ja
Publication of JP2000114599A publication Critical patent/JP2000114599A/ja
Publication of JP2000114599A5 publication Critical patent/JP2000114599A5/ja
Application granted granted Critical
Publication of JP4530234B2 publication Critical patent/JP4530234B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP28851698A 1998-10-09 1998-10-09 半導体発光素子 Expired - Fee Related JP4530234B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28851698A JP4530234B2 (ja) 1998-10-09 1998-10-09 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28851698A JP4530234B2 (ja) 1998-10-09 1998-10-09 半導体発光素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009009324A Division JP4586094B2 (ja) 2009-01-19 2009-01-19 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2000114599A JP2000114599A (ja) 2000-04-21
JP2000114599A5 true JP2000114599A5 (enrdf_load_stackoverflow) 2005-10-06
JP4530234B2 JP4530234B2 (ja) 2010-08-25

Family

ID=17731250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28851698A Expired - Fee Related JP4530234B2 (ja) 1998-10-09 1998-10-09 半導体発光素子

Country Status (1)

Country Link
JP (1) JP4530234B2 (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7691656B2 (en) 2000-10-17 2010-04-06 Osram Gmbh Method for fabricating a semiconductor component based on GaN
US7691659B2 (en) 2000-04-26 2010-04-06 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
US7939844B2 (en) 2000-05-26 2011-05-10 Osram Gmbh Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5523277B2 (ja) * 2000-04-26 2014-06-18 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光半導体素子並びに発光性半導体素子の製造方法
DE10020464A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
JP2001345520A (ja) * 2000-06-02 2001-12-14 Sony Corp 半導体発光素子の製造方法
JP3876649B2 (ja) 2001-06-05 2007-02-07 ソニー株式会社 窒化物半導体レーザ及びその製造方法
KR100576857B1 (ko) * 2003-12-24 2006-05-10 삼성전기주식회사 ＧａＮ 반도체 발광소자 및 그 제조방법
JP5201563B2 (ja) * 2004-11-16 2013-06-05 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
KR100638818B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 질화물 반도체 발광소자
US20070069225A1 (en) * 2005-09-27 2007-03-29 Lumileds Lighting U.S., Llc III-V light emitting device
JP2007258599A (ja) * 2006-03-24 2007-10-04 Sanyo Electric Co Ltd 半導体素子及び半導体素子の製造方法
CN117913191B (zh) * 2024-03-15 2024-05-17 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7691659B2 (en) 2000-04-26 2010-04-06 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
US7939844B2 (en) 2000-05-26 2011-05-10 Osram Gmbh Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same
US7691656B2 (en) 2000-10-17 2010-04-06 Osram Gmbh Method for fabricating a semiconductor component based on GaN
US8129209B2 (en) 2000-10-17 2012-03-06 Osram Ag Method for fabricating a semiconductor component based on GaN

Similar Documents

Publication Publication Date Title
US7981714B2 (en) Nitride based semiconductor device using nanorods and process for preparing the same
TWI263387B (en) Light emitting device structure provided with nitride bulk mono-crystal layers
CA2177465A1 (en) Buffer Structure Between Silicon Carbide and Gallium Nitride and Resulting Semiconductor Devices
JP2000114599A5 (enrdf_load_stackoverflow)
CA2655579A1 (en) Method and device for fabricating semiconductor light emitting elements
JP2001196632A5 (enrdf_load_stackoverflow)
EP1288346A3 (en) Method of manufacturing compound single crystal
WO2002031890A3 (en) OPTOELECTRONIC AND MICROELECTRONIC DEVICES INCLUDING CUBIC ZnMgO AND/OR CdMgO ALLOYS AND METHODS OF FABRICATING SAME
EP0993048A3 (en) Nitride semiconductor device and its manufacturing method
EP1032099A3 (en) Semiconductor device and method of fabricating the same
JP2015181180A (ja) 層構造の製造方法
JP2004508720A (ja) Ｉｉｉ−ｖ窒化物半導体ベースの放射線を発する半導体チップを製造する方法および放射線を発する半導体チップ
EP0779666A3 (en) Semiconductor device and method of fabricating semiconductor device
EP1049178A3 (en) Group III nitride compound semiconductor light-emitting device
JP2000036620A5 (enrdf_load_stackoverflow)
EP0735598A3 (en) Compound semiconductor light emitting device and method of preparing the same
JP2001168385A5 (enrdf_load_stackoverflow)
US7833809B2 (en) Light emitting diode, optoelectronic device and method of fabricating the same
EP1383176A4 (en) SEMICONDUCTOR LUMINESCENT ELEMENT CONTAINING GROUP III NITRIDE COMPOUND
KR940022934A (ko) 반도체 발광 소자 및 그 제조 방법
JP2005209925A5 (enrdf_load_stackoverflow)
JP2003060234A5 (enrdf_load_stackoverflow)
JP2001007396A5 (enrdf_load_stackoverflow)
JP2000058964A5 (enrdf_load_stackoverflow)
JP2000058451A5 (enrdf_load_stackoverflow)