JP2000109984A - Method and device for production of micro structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and device for producing a micro structure having a high yield and a high image resolution in the laminating direction. SOLUTION: While rotating a substrate holder 30 and a transfer table 40, the joining face of plural thin films 12a on a substrate 10 and the transfer table 40 is irradiated with an argon high speed atom beam 5, plural thin films 12a are peeled from the substrate 10, plural thin films 12a are laminated/joined on the transfer table 40, a micro structure is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for producing a microstructure for producing a microstructure such as a microgear, a microscopic optical component, or a mold for molding the same by a lamination molding method. The present invention relates to a method and an apparatus for manufacturing a microstructure having a high yield and capable of increasing the resolution in the stacking direction.

[0002]

2. Description of the Related Art The additive manufacturing method has been rapidly spread in recent years as a method of forming a three-dimensional object having a complicated shape designed by a computer in a short delivery time. The three-dimensional object formed by the additive manufacturing method is used as a model (prototype) of a part of various devices to check the operation or shape of the part. The size of parts to which this method is applied is relatively large, which is several centimeters or more. In recent years, this method has also been applied to minute parts formed by precision processing, such as minute gears and minute optical parts. There is a need to do it. As a conventional method of manufacturing a microstructure to meet such needs, for example, Japanese Patent Application Laid-Open No. H8-12707
There is one disclosed in Japanese Unexamined Patent Publication No. 3 (KOKAI).

FIGS. 13A to 13D show a manufacturing method thereof. As shown in FIG.
0, a photosensitive resin film 171 is formed and exposed to a desired pattern to form an exposed portion 171a as shown in FIG. 4B, and a resin film 171 is formed as shown in FIG. Is repeated, and the step of forming an intermediate film 172 that prevents exposure of the lower layer is prevented, as shown in FIG.
1 and an intermediate film 172, and then immersed in a resin developer to expose the exposed portion 17 shown in FIGS.
This is a method of selectively removing 1a to obtain a three-dimensional microstructure as shown in FIG. If this manufacturing method is used, since the resin film 171 and the intermediate film 172 can be applied by a spin coating method or the like, the resolution in the laminating direction can be on the order of μm.

[0004]

However, according to the conventional method for manufacturing a microstructure, the photosensitive resin films 171, 17
Intermediate film 17 for preventing exposure to the lower layer in the exposure process during one
2 is required, so that the resolution of one layer
2 has a problem that the resolution in the stacking direction is deteriorated. On the other hand, it is difficult to obtain high resolution by controlling the exposure intensity without the intermediate film 172.

Therefore, the present applicant has proposed a method for manufacturing a microstructure which solves such a problem (Japanese Patent Application No. Hei 9-114071). In this manufacturing method, a thin film is uniformly formed on a substrate by a sputtering method or the like, and the thin film is etched by a photolithography method or the like to form a plurality of thin films having a predetermined two-dimensional pattern on the substrate. A fast atom bombardment (FAB) of argon was applied to the bonding surface of the thin films.
The microstructure is formed by irradiating from a direction of 5 degrees to clean the bonding surface, peeling a plurality of thin films from the substrate, stacking a plurality of thin films irradiated with FAB on a stage irradiated with FAB, and bonding. Is formed.

FIG. 14 shows a problem of the manufacturing method disclosed in Japanese Patent Application No. Hei 9-114071. As shown in the figure, the surface of the thin film 12a formed by a sputtering method or the like has fine irregularities corresponding to grains (crystal grains), but when the irradiation direction of the FAB5 to the thin film 12a is fixed at 45 degrees, FAB irradiation area 120 to which FAB5 is irradiated
Then, the FAB non-irradiated area 121 where the FAB 5 is not irradiated occurs. An oxide film, impurities, and the like remain in the non-FAB irradiated area 121. As described above, if the bonding surface cannot be completely cleaned, there is a problem that the effective bonding area is reduced, the bonding strength is reduced, the transfer of the thin film is poor, and the yield is reduced.

Accordingly, an object of the present invention is to provide a high yield,
An object of the present invention is to provide a method and an apparatus for manufacturing a microstructure capable of increasing the resolution in the stacking direction.

[0008]

In order to achieve the above object, the present invention provides a method for manufacturing a microstructure by manufacturing a microstructure by laminating and joining a plurality of thin films on a stage. Forming the plurality of thin films having a cross-sectional pattern corresponding to the cross-sectional shape of the microstructure, and joining the stage and the plurality of thin films, between the stage and the thin films, and between the plurality of thin films. Irradiating a particle beam so as to obtain a predetermined bonding strength, peeling the plurality of thin films from the substrate, and laminating the plurality of thin films irradiated with the particle beam on the stage irradiated with the particle beam The present invention provides a method for manufacturing a microstructure characterized by joining by bonding. According to the above configuration, by irradiating a particle beam to the bonding surface of the stage and the plurality of thin films, the bonding surface is cleaned, the effective bonding area increases, and a predetermined bonding strength can be obtained.

According to the present invention, there is provided a microstructure manufacturing apparatus for manufacturing a microstructure by laminating and joining a plurality of thin films to achieve the above object. A tank, a substrate holder placed in the vacuum tank, and on which the substrate on which the plurality of thin films are formed is placed, and placed in the vacuum tank so as to face the substrate holder, and laminating and joining the plurality of thin films. An opposing stage that supports the microstructure formed by moving the substrate, a moving unit that relatively moves the substrate holder and the opposing stage, a joining surface of the opposing stage, and the plurality of thin films on the substrate holder. Particles on the bonding surface of the plurality of thin films supported on the opposed stage, so that a predetermined bonding strength is obtained between the stage and the thin films and between the plurality of thin films. Irradiating means for irradiating a beam, the plurality of thin films are sequentially peeled off from the substrate at a position where the thin film to be laminated and the opposed stage face each other, and the plurality of peeled thin films are sequentially laminated on the stage. And a control unit for controlling the moving unit so as to form the microstructure by joining the microstructures. According to the above configuration, by irradiating the particle surface to the joint surface between the opposing stage and the plurality of thin films, the joint surface is cleaned, the effective joint area increases, and a predetermined joint strength is obtained.

[0010]

FIG. 1 shows a joining apparatus according to a first embodiment of the present invention. The bonding apparatus 1 has a vacuum chamber 2 in which a lamination bonding step described later is performed. Inside the vacuum chamber 2, a lower stage 3 on which a substrate is mounted and a position opposite to the lower stage 3 are arranged. The upper stage 4, the lower stage 3 is irradiated with a fast atom bombardment (FAB) 5 of argon to irradiate a first FAB emission end 6A for cleaning the surface, and the upper stage 4 is irradiated with FAB5. And a second FAB emission end 6B for cleaning the surface.

The lower stage 3 includes a substrate holder 30 on which a substrate is placed, and a substrate holder 30 which is arranged in an x-axis direction, a y-axis direction,
An x-axis motor, a y-axis motor, and a θ motor that move in the θ direction around the z-axis, respectively, and a position measuring device such as a laser interferometer or a glass scale that detects positions in the x-axis direction, the y-axis direction, and the θ direction. Provided xy-θ stage 3
And 1.

The upper stage 4 includes a transfer table 40 on which a thin film is transferred, a z-axis motor and a θ motor that move the transfer table 40 in the z-axis direction and the θ direction around the z-axis, respectively.
It has a z-θ stage 41 provided with a position measuring device such as a laser interferometer or a glass scale for detecting positions in the z-axis direction and the θ direction.

2 (a) to 2 (c), 3 (a), 3 (b), 4
(a), (b), and FIG. 5 show a process of manufacturing a microstructure by the bonding apparatus 1 according to the first embodiment.

First, as shown in FIG. 2A, a substrate 10 made of a Si wafer is prepared, and polyimide (for example, polyimide PIX3400 manufactured by Hitachi Chemical) is applied on the substrate 10 by a spin coating method. Baking at a temperature of 0 ° C. to form a release layer 11.

Next, as shown in FIG.
0.5 μm of an Al thin film 12 by sputtering.
m is deposited. The target was made of high-purity Al, the sputtering pressure was 0.5 Pa, and the temperature of the substrate 10 was room temperature. During the deposition of the Al thin film 12, the thickness was constantly monitored by a quartz crystal film thickness meter, and the deposition was terminated when the thickness reached 0.5 μm. The film thickness distribution in the substrate 10 is 0.5 ±
0.02 μm or less was obtained.

Next, as shown in FIG. 2C, a photoresist (not shown) is applied to the surface of the substrate 10, and the Al thin film 12 is etched by a usual photolithography method to form a desired microstructure. A plurality of thin films 12a are collectively formed together with alignment marks (not shown) for position detection by patterning into a cross-sectional shape. A positive type photoresist is used, and the photoresist is exposed using a photomask (not shown). After etching the Al thin film 12,
The photoresist is removed with a stripper.

Next, as shown in FIG. 3A, the substrate 10 on which a plurality of thin films 12a are formed is fixed on a substrate holder 30 in the vacuum chamber 2, and the upper stage 4 in the vacuum chamber 2 Then, the inside of the vacuum chamber 2 is evacuated to a vacuum. In the present embodiment, air was exhausted to the order of 10 ⁻⁶ Pa. And upper stage 4
FAB5 on the surface of the transfer table 40 and the surface of the thin film 12a.
Is irradiated. At this time, the substrate holder 30 and the transfer table 4
0 is rotated at 10 rpm by the xy-θ stage 31 and the z-θ stage 41, and the FAB 5 is irradiated from the FAB emission ends 6A and 6B. The FAB processing conditions are a FAB voltage of 1.5 kV, a FAB current of 15 mA, and a processing time of 10 min.

Next, as shown in FIG. 3B, the transfer table 40 and the substrate 10 are brought close to each other by the z-θ stage 41, and the surface of the clean transfer table 40 is brought into contact with the surface of the clean first-layer thin film 12a. And apply a load of 50 kgf / cm ² , 5
By pressing the transfer table 40 for one minute, the transfer table 40 and the first-layer thin film 12a are firmly joined. When the joining strength was evaluated by a tensile test, it was 50 to 100 MPa. In the method of irradiating the FAB 5 without rotating the substrate holder 30 and the transfer table 40, the bonding strength between the thin films was about 10 MPa.

Next, as shown in FIG. 4A, when the transfer table 40 and the substrate 10 are separated from each other by the z-θ stage 41, the bonding force between the thin film 12a and the transfer table 40 becomes smaller. Is larger than the adhesion between the thin film 12 and the substrate 10.
a is transferred from the substrate 10 side to the transfer table 40 side.

Next, as shown in FIG. 4 (b), xy so that the second thin film 12a is located under the upper stage 4.
After the substrate holder 30 is moved by the -θ stage 31, the substrate holder 30 and the transfer table 40 are respectively xy
1 by the −θ stage 31 and the z−θ stage 41
The FAB emitting ends 6A and 6B are again rotated while rotating at 0 rpm.
Irradiates FAB5. The difference from the first FAB5 irradiation is that the surface of the transfer table 40 is not irradiated with FAB5,
This is to irradiate the back surface of the thin film 12a of the layer (the surface that has been in contact with the substrate 10 side so far) and clean it. The positioning of the upper stage 4 and the substrate 10 is performed by observing the alignment mark with a microscope and using the xy-θ stage 31.
And the z-θ stage 41 is used.

Next, as shown in FIG.
Bonding / transferring 2a and repeating bonding / peeling / transferring of the third to 100th thin films 12a onto the transfer table 40 in the same manner are repeated to manufacture a microstructure composed of 100 thin films 12a.

According to the above-described first embodiment, FA is applied to a plurality of patterned thin films 12a from a plurality of directions.
Since B5 is irradiated, the non-FAB-irradiated area 121 can be reduced, the effective bonding area increases, and the transfer table 40 and the thin film 1
A predetermined bonding strength is obtained between 2a and between thin films 12a. As a result, bonding defects are reduced, and the yield can be improved.

FIGS. 6A and 6B show a joining apparatus according to a second embodiment of the present invention. This joining apparatus 1 is the same as the first embodiment except that a shutter mechanism 7 is added to the inside of the vacuum chamber 2 in the first embodiment.

The shutter mechanism 7 includes a first hinge 70A
First and second shafts 71 and 72 connected by
Connected to the second shaft 72 by a second hinge 70B,
A shutter 73 having an opening 73a for limiting the irradiation area of the FAB 5;

FIG. 7 shows the details of the shutter section 73.
The shutter 73 is provided between the FAB emission ends 6A and 6B and the substrate 1.
0, and it suffices if the irradiation of the FAB 5 to the thin film 12a other than the desired thin film 12a can be prevented.
However, since the Ar atom beam travels with a certain spread, it is preferable to arrange the shutter portion 73 close to the substrate 10. As a material of the shutter portion 73, carbon steel, stainless steel (SUS), or the like, which is difficult to be etched, is preferable, and use of these materials increases durability. The outer shape of the shutter portion 73 and the size of the opening 73a are
The distance is appropriately selected according to the distance between the thin films 12a on the substrate 0, the distance between the FAB emission end and the substrate 10, and the like. In the present embodiment, FIG.
When the shutter mechanism 7 is not provided as shown in FIG.
The FAB irradiation area 120 irradiated on 0 is about 35 mm ×
30 mm, the size of the shutter portion 73 is 40 mm × 40 mm in outer shape, and the size of the opening 73 a is 10 mm.
× 10 mm.

FIGS. 8 (a) and 8 (b), FIGS. 9 (a) and 9 (b), FIG.
Shows a manufacturing process of the microstructure by the bonding apparatus 1 according to the second embodiment.

First, a substrate 10 having a plurality of thin films 12a is manufactured as described with reference to FIGS. 2 (a) to 2 (c).

Next, as shown in FIG.
0 is fixed on the substrate holder 30 in the vacuum chamber 2.
The inside of the vacuum chamber 2 is evacuated to a vacuum by facing the upper stage 4 located inside. In this embodiment, the gas is exhausted to the order of 10 ⁻⁶ Pa. Then, the surface of the transfer table 40 of the upper stage 4 and the surface of the thin film 12a are irradiated with FAB5. At this time, the substrate holder 30 and the transfer table 40 are moved at 10 rpm by the xy-θ stage 31 and the z-θ stage 41, respectively.
And rotate the shutter 73 from the substrate 10 to 5
mm, and the FAB 5 was irradiated from the FAB emission ends 6A and 6B. The FAB processing conditions were as follows: FAB voltage 1.5 kV, FAB current 15 mA, processing time 10 min.
And

Next, as shown in FIG. 8 (b), after raising the second shaft 72 of the shutter mechanism 7 and bending the second hinge 70B, the transfer table 40 and the substrate 10 are brought close to each other to clean The surface of the transfer table 40 was brought into contact with the clean surface of the first thin film 12a, and a load of 50 kgf / cm ² was applied and pressed for 5 minutes, thereby firmly joining the transfer table 40 and the first thin film 12a. When the joining strength was evaluated by a tensile test, it was 50 to 100 MPa as in the first embodiment. In order to obtain a strong bonding strength, the thin film 12a
And the transfer table 40 had a surface roughness of 10 nm or less.

Next, as shown in FIG.
When the substrate 10 and the substrate 10 are separated from each other, the bonding force between the thin film 12a and the transfer table 40 is larger than the adhesive force between the thin film 12a and the substrate 10, so that the thin film 12a is
It is transferred to the 0 side.

Next, as shown in FIG. 9 (b), xy so that the second thin film 12a is located under the upper stage 4.
After the substrate holder 30 is moved by the -θ stage 31, the substrate holder 30 and the transfer table 40 are respectively xy
1 by the −θ stage 31 and the z−θ stage 41
It is rotated at 0 rpm and the shutter 7 is installed at a position 5 mm away from the substrate 10, and the FAB emission end 6
Irradiate FAB5 from A and 6B. The difference from the first FAB5 irradiation is that the front surface of the transfer table 40 is not irradiated with the FAB5, but is irradiated on the back surface of the first thin film 12a (the surface that has been in contact with the substrate 10 side) to clean it. It is to be.

Next, as shown in FIG. 10, the second thin film 12a is bonded and transferred, and similarly, the third to 100th thin films 12a are bonded, peeled and transferred onto the transfer table 40. By repeating this, a microstructure composed of 100 thin films 12a is manufactured.

FIG. 11 shows the effect of the second embodiment. FAB irradiation area 1 where FAB 5 is irradiated on substrate 10 on which a plurality of thin films 12a are formed by patterning
Reference numeral 20 denotes a region (10 mm) where one thin film 12a is formed.
), Which is several tens of mm square. Therefore, the substrate 10
Upon irradiation with FAB5 to transfer the thin film 12a ₁ with a top to the upper stage 4 side, FAB5 is irradiated to the thin film 12a _2, 12a ₃ other than the desired thin film 12a _1, the number n
m will be etched. Also, since the FAB 5 is an atomic beam, unlike an ion beam or an electron beam, it cannot be deflected by application of an electric field or the like, so it is difficult to narrow the FAB irradiation area 120, and the thin film 12a other than the desired thin film 12a irradiates the FAB 5 with irradiation. Then, it is etched by several nm. For this reason, when a microstructure is manufactured by laminating 100 layers, the height of the microstructure is several hundreds higher than the desired height of the microstructure.
nm lower, and the shape accuracy decreases.

Therefore, according to the above-described second embodiment, when the substrate 10 is irradiated with the FAB 5, the desired thin film 1
Since the shutter mechanism 7 for preventing the irradiation of the FAB 5 to the thin film 12a other than the thin film 12a is provided to prevent the thickness of the thin film 12a from being reduced, the height of the microstructure does not decrease by several hundred nm, and is as desired. Height is obtained, shutter mechanism 7
Shape accuracy can be improved as compared with the case where no is provided.

FIG. 12 shows another example of the shutter section 73. As shown in the figure, the shutter unit 73 is provided with a pair of levers 730x, 730x that move in the x-axis direction and a pair of levers 730y, 730y that move in the y-axis direction, and a pair of levers 730x in the x-axis direction. , 730X and y-axis direction of the pair of levers 730Y, by adjusting the position of 730Y, may be the size L _1, L ₂ of the opening 73a in the variable. Thus, even if the thin films 12a having different sizes exist on the substrate 10, the FAB irradiation area 120 can be controlled each time by changing the size of the opening 73a according to the size of the thin film 12a.

The present invention is not limited to the above embodiment, but can be variously modified. For example, the thin film (thin-film laminate) to be irradiated with FAB may be fixed, and the emission end of the FAB may be moved in the x, y, and z-axis directions. Or the elevation angle of the FAB emission end may be changed. Conversely, the FAB emission end may be fixed, and the substrate holder and the transfer table may be moved in the x, y, and z-axis directions, or the substrate holder and the transfer table may be rotated (rotated). Also, a plurality of FAB emission ends are installed, and F
AB irradiation may be performed, or the above structures may be appropriately combined. Among these, the substrate holder holding a plurality of thin films, the transfer table holding the thin film stack, and the FAB source are rotated around the z axis so that the FAB is irradiated from all directions to the thin film surface. Is preferred. Thereby, the surface of the thin film is uniformly cleaned. More preferably, the substrate holder for holding a plurality of thin films and the transfer table for holding the thin film stack are rotated around the z-axis. With this, FA
The device is simpler than rotating the B emission end. The installation of a plurality of FAB emission ends further simplifies the apparatus because the rotation mechanism is eliminated. In the above embodiment, the sputtering method is described as a method for depositing a thin film on a substrate. Method may be used. Further, in the above embodiment, the case where Al is used as the material of the thin film has been described.
Other metals such as copper and indium may be used, and insulators such as alumina and silicon carbide may be used.

[0037]

As described above, according to the present invention, the bonding surface of the stage and the plurality of thin films is irradiated with a particle beam to clean the bonding surface and obtain a predetermined bonding strength. The number of defects is reduced, and the yield can be improved. In addition, by irradiating only a desired thin film with a particle beam, a decrease in the thickness of the thin film can be prevented, so that high resolution in the stacking direction can be achieved.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a joining device according to a first embodiment of the present invention.

FIGS. 2 (a) to 2 (c) are manufacturing process diagrams of a microstructure by the bonding apparatus according to the first embodiment.

FIGS. 3 (a) and 3 (b) are manufacturing process diagrams of a microstructure by the bonding apparatus according to the first embodiment.

FIGS. 4A and 4B are manufacturing process diagrams of a microstructure by the bonding apparatus according to the first embodiment.

FIG. 5 is a manufacturing process diagram of the microstructure using the bonding apparatus according to the first embodiment.

FIG. 6A is a schematic configuration diagram of a bonding apparatus according to a second embodiment of the present invention, and FIG. 6B is a perspective view of a main part of a shutter unit.

FIG. 7 is a detailed perspective view of a shutter unit according to a second embodiment.

FIGS. 8A and 8B are manufacturing process diagrams of a microstructure using a bonding apparatus according to a second embodiment.

FIGS. 9A and 9B are manufacturing process diagrams of a microstructure by a bonding apparatus according to a second embodiment.

FIG. 10 is a view showing a manufacturing process of a microstructure by the bonding apparatus according to the second embodiment.

FIG. 11 is a diagram for explaining an effect of the second embodiment.

FIG. 12 is a diagram illustrating another example of the shutter unit according to the second embodiment.

13A to 13D are process diagrams showing a conventional method for manufacturing a microstructure.

FIG. 14 is a view for explaining a problem of a conventional method for manufacturing a microstructure.

[Explanation of symbols]

1 joining apparatus 2 vacuum chamber 3 lower stage 4 upper stage 5 FAB 6A first FAB exit end 6B second FAB exit end 7 the shutter mechanism 10 substrate 11 the release layer 12 Al thin film _{12a, 12a 1, 12a 2,} 12a 3 Thin film 30 Substrate holder 31 xy-θ stage 40 Transfer stage 41 z-θ stage 70A First hinge 70B Second hinge 71 First axis 72 Second axis 73 Shutter portion 73a Opening 120 FAB irradiation area 121 FAB unirradiated region 730X, 730Y lever L _1, the magnitude of L ₂ opening

Claims (20)

[Claims] 1. A method for manufacturing a microstructure by manufacturing a microstructure by laminating and joining a plurality of thin films on a stage, comprising a cross-sectional pattern corresponding to a cross-sectional shape of the microstructure on a substrate. Forming the plurality of thin films, irradiating a particle beam on the bonding surface of the stage and the plurality of thin films, so that a predetermined bonding strength is obtained between the stage and the thin films, and between the plurality of thin films, A method for manufacturing a microstructure, comprising: separating the plurality of thin films from the substrate; stacking and bonding the plurality of thin films irradiated with the particle beam on the stage irradiated with the particle beam; . 2. The method according to claim 1, wherein the irradiation of the particle beam is performed from a plurality of directions. 3. The method for manufacturing a microstructure according to claim 1, wherein the irradiation of the particle beam is performed by changing an angle of the irradiation direction of the particle beam with the bonding surface. 4. The method for manufacturing a microstructure according to claim 1, wherein the irradiation of the particle beam is performed by changing an angle of an irradiation direction of the particle beam around an axis orthogonal to the bonding surface. 5. The method according to claim 4, wherein the irradiation of the particle beam is performed while rotating the stage and the substrate on which the plurality of thin films are formed around the axis. 6. The method according to claim 1, wherein the irradiation of the particle beam is performed from a direction perpendicular to the bonding surface. 7. The method for manufacturing a microstructure according to claim 1, wherein the peeling of the plurality of thin films, the irradiation of the particle beam, and the joining of the plurality of thin films are performed for each of the thin films. 8. A microstructure manufacturing apparatus for manufacturing a microstructure by laminating and joining a plurality of thin films, comprising: a vacuum chamber in which a step of stacking the plurality of thin films is performed; And a substrate holder on which the substrate on which the plurality of thin films are formed is placed, and the microstructure is disposed in the vacuum chamber so as to face the substrate holder, and is formed by stacking and bonding the plurality of thin films. An opposing stage that supports the substrate holder; a moving unit that relatively moves the substrate holder and the opposing stage; a bonding surface of the opposing stage; a bonding surface of the plurality of thin films on the substrate holder; Irradiation means for irradiating a bonding surface of the plurality of thin films supported by a particle beam so as to obtain a predetermined bonding strength between the stage and the thin film and between the plurality of thin films; The plurality of thin films are sequentially peeled from the substrate at a position where the thin film and the opposing stage face each other, and the separated thin films are sequentially laminated and bonded on the stage to form the microstructure. And a control means for controlling the moving means as described above. 9. The apparatus for manufacturing a microstructure according to claim 8, wherein said irradiation means is configured to perform the irradiation from a plurality of directions. 10. The apparatus according to claim 1, wherein said irradiating means comprises an emitting end for emitting said particle beam, and a changing means for changing an orientation of said emitting end relative to said substrate holder and said opposed stage. Item 10. An apparatus for manufacturing a microstructure according to Item 8. 11. The irradiation means according to claim 8, wherein said irradiating means includes an emitting end for emitting said particle beam, and a changing means for relatively changing an angle between said joining surface and said emitting end. An apparatus for manufacturing the microstructure according to the above. 12. The apparatus according to claim 1, wherein said irradiating means comprises an emitting end for emitting said particle beam, and a changing means for relatively rotating the direction of said emitting end around an axis orthogonal to said bonding surface. Item 10. An apparatus for manufacturing a microstructure according to Item 8. 13. The apparatus according to claim 12, wherein said substrate holder and said opposing stage are provided with a rotating mechanism, and said changing means is configured to rotate said substrate holder and said opposing stage around said axis by said rotating mechanism. Manufacturing equipment for microstructures. 14. An irradiation end for emitting the particle beam toward the substrate holder, an emitting end for emitting the particle beam toward the opposite stage, and an emitting end for emitting the particle beam toward the opposite stage. 9. The apparatus for manufacturing a microstructure according to claim 8, further comprising changing means for changing a direction of the holder-side emitting end and the facing stage-side emitting end relative to the substrate holder and the facing stage. 15. A rotating means for rotating the light emitting end on the substrate holder side and the light emitting end on the opposed stage side relatively around an axis in a direction in which the thin film and the opposed stage face each other. An apparatus for manufacturing a microstructure according to claim 14, having a configuration. 16. The apparatus for manufacturing a microstructure according to claim 8, wherein said irradiation means has a plurality of emission ends for emitting said particle beam from a plurality of directions on said bonding surface. 17. The apparatus according to claim 8, wherein said irradiating means irradiates said particle beam from a direction orthogonal to said bonding surface. 18. The irradiating means includes an emission end for emitting the particle beam, and a shutter having an opening for restricting the particle beam emitted from the emission end so as to irradiate one of the thin films. An apparatus for manufacturing a microstructure according to claim 8, wherein the apparatus has a configuration. 19. An apparatus according to claim 18, wherein said shutter has a configuration in which the size of said opening is variable. 20. An apparatus according to claim 18, wherein said shutter is made of carbon steel or stainless steel.