JPH11151754A - Method and apparatus for producing minute structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance resolution in a laminating direction and to shorten a laminating time. SOLUTION: M pieces of membranes 34 having the same cross-sectional shape are formed on a substrate 31 within the same cell and N pieces of cells C1 -C16 of first - N-th layers are formed at a predetermined pitch. The cell C1 of the first layer on the substrate 31 is moved to the part just under a stage and M pieces of membranes 34 are peeled from the cell C1 of the first layer to be laminated on the stage to be bonded. The substrate 31 is moved at the predetermined pitch and the cell C2 of the second layer laminated next is positioned just under the stage. By repeating this process, M pieces of minute structures 30A, 30B, 30C, 30D comprising N pieces of membranes 34 are produced at the same time.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for manufacturing a micro gear or a micro optical component manufactured by an additive manufacturing method, or a micro structure such as a mold for molding the same. TECHNICAL FIELD The present invention relates to a method and an apparatus for manufacturing a microstructure in which a thin film made of a body is patterned into a cross-sectional shape of a microstructure, and these are laminated to form a microstructure.

[0002]

2. Description of the Related Art The additive manufacturing method has been rapidly spread in recent years as a method of forming a three-dimensional object having a complicated shape designed by a computer in a short delivery time. A three-dimensional object created by the additive manufacturing method is used as a model (prototype) of a part of various devices to check the operation and shape of the part. The size of parts to which this method is applied is relatively large, which is several centimeters or more. In recent years, this method has also been applied to minute parts formed by precision processing, such as minute gears and minute optical parts. There is a need to do it. In order to meet such needs, the following additive manufacturing method is conventionally known. (1) Stereolithography (hereinafter referred to as "Conventional Example 1") (2) Powder method (hereinafter referred to as "Conventional Example 2") (3) Sheet laminating method (hereinafter referred to as "Conventional Example 3") (4) A method using a thin film as a starting material (hereinafter referred to as “conventional example 4”)

FIG. 9 shows a stereolithography method of the first conventional example. In this “stereolithography”, a laser beam 102 is subjected to two-dimensional scanning from a top surface of a tank 101 filled with a photocurable resin 100 that is cured by irradiation with light such as ultraviolet rays according to cross-sectional shape data of a three-dimensional object. After curing the resin layer 100a, the stage 1
03 is reduced by one layer, and this process is repeated to form a three-dimensional object including a plurality of resin layers 100a. This stereolithography method is described by Ikuta et al. Of Nagoya University in the document "OPTRONICS, 1996, No4, p1.
03 ". According to this stereolithography method,
By optimizing the exposure conditions and optimizing the resin characteristics, it is possible to achieve a planar shape accuracy of 5 μm and a resolution of 3 μm in the laminating direction. Also, Kawata et al. Of Osaka University published a document “Proceedings of MEMS 9”.
7, p. 169 ". According to this stereolithography method, by using the principle of the two-photon absorption phenomenon, the planar shape accuracy is 0.62 μm, and the resolution in the stacking direction is 2.
2 μm can be achieved.

FIG. 10 shows a powder method of Conventional Example 2. In this “powder method”, a thin layer of powder (powder) 104 a is spread over a thin layer (powder layer) 104 a by irradiating a laser beam 102 onto the thin layer 104 a to sinter the powder layer 104 a into a thin layer of a desired shape. Then, by repeating this step, a three-dimensional object of a sintered body composed of the plurality of powder layers 104a is formed. According to this powder method, it is possible to form not only resin but also ceramics and metal as a three-dimensional object.

FIG. 11 is a diagram showing a manufacturing apparatus according to the sheet laminating method of Conventional Example 3, which is disclosed in Japanese Patent Application Laid-Open No. Hei 6-190929. In this manufacturing equipment,
Plastic film 111 from film supply unit 110
Is supplied, the plastic film 111 is coated on the lower surface by the adhesive application section 120 with the photocurable adhesive 121.
Is uniformly applied to form an adhesive layer, a region other than the region corresponding to the cross-sectional shape of the microstructure in the adhesive layer is exposed by the negative pattern exposure unit 130, a cured portion and an uncured portion are formed, Press roller 14 of light curing joint 140
1, the uncured portion is cured by the light from the linear light source 142, and is bonded to the lower plastic film 111. The laser cutting section 150 cuts the rear end of the plastic film 111 by the laser from the carbon dioxide gas laser source 151 and removes the outline of the unnecessary area of the uppermost plastic film 111 by the laser. By repeating this step, a microstructure is manufactured. In the figure, reference numeral 160 denotes a workstation for controlling the apparatus. According to this sheet laminating method, a microstructure made of a plastic sheet is obtained.

FIG. 12 is a diagram showing a manufacturing method using the thin film of Conventional Example 4 as a starting material.
No. 73 publication. In this manufacturing method, a photosensitive resin film 171 is formed on a base material 170 as shown in FIG. 1A, and is exposed to a desired pattern to form an exposed portion 171a as shown in FIG. Process and the same figure
As shown in (c), the process of preventing the mixing of the resin film 171 and forming the intermediate film 172 that prevents exposure to the lower layer is repeated, and as shown in FIG.
After the formation of the multilayer structure consisting of 2 parts, the exposed part 171a shown in FIGS. 2 (b) and 2 (c) is selectively removed by immersion in a developing solution of a resin, and as shown in FIG. This is a method for obtaining a microstructure. If this manufacturing method is used, the resin film 171
And the intermediate film 172 can be applied by a spin coating method or the like.
The resolution in the stacking direction can be on the order of μm.

[0007]

However, according to the stereolithography method of the prior art 1, the resolution in the laminating direction of 1 μm or less and the film thickness accuracy of 0.1 μm or less necessary for manufacturing minute gears and minute optical components cannot be achieved. There is a disadvantage that. In other words, since the light that is perpendicularly incident on the layer is used to cure the starting material (photocurable resin), the vertically incident light is absorbed from the surface and penetrates deeply while reducing its intensity, and eventually cures Below the threshold level required for. The thickness of the layer up to that point is the thickness of one layer, which varies due to variations in the intensity of incident light, changes over time, variations in the absorption coefficient of the starting material, and the like, so that it is difficult to achieve high resolution. In addition, since a photo-curing resin is used, there is a disadvantage that the entire material shrinks by 1% to several% in a full curing process for complete curing performed after molding, and the accuracy is greatly reduced in this process. Further, since a three-dimensional object is formed by curing the resin layer by two-dimensional scanning of laser light, it takes a long time to manufacture a large number of three-dimensional objects. Also,
Since the three-dimensional object that can be manufactured is limited to a relatively soft photocurable resin, when manufacturing a target three-dimensional object using a hard material such as a metal, the resin is used as a mold by an electroforming method or an injection molding method. There is a drawback that transfer is only possible and a transfer step is required.

Further, according to the powder method of Conventional Example 2, since light incident perpendicularly to the layer is used, as in Conventional Example 1,
The resolution in the laminating direction is poor, and the precision is deteriorated due to shrinkage in the full curing process. In addition, since two-dimensional scanning with laser light is used, it takes time to manufacture a large number of laser beams, as in Conventional Example 1. Further, when a three-dimensional object made of a hard material such as metal is manufactured, there is a disadvantage that a transfer step is required.

According to the sheet laminating method of Conventional Example 3,
The resolution in the stacking direction is determined by the thickness of the sheet, and its lower limit is about several tens of μm in consideration of the handling of the sheet, and a resolution of 1 μm or less in the stacking direction is impossible.

Further, according to the manufacturing method using the thin film of Conventional Example 4 as a starting material, since light that is incident almost perpendicularly in the exposure step is used, an intermediate film (eg, Al) is required to prevent exposure to the lower layer. This is disadvantageous in terms of resolution per layer. Further, in order to omit the intermediate film, a method of alternately laminating two kinds of photosensitive resins having different photosensitive wavelengths and solvents, exposing each of them, and finally developing them to form a three-dimensional shape is disclosed in the publication. However, there are drawbacks in that there is difficulty in adhesion between resins having different solvents, that the strength of a completed part is low, and that the photosensitive resin swells in the last development step, resulting in poor dimensional accuracy. Further, since a photosensitive resin is used, it cannot be directly applied to a material such as a metal or an insulator as in the case of the above-described stereolithography method, and has to be used as a mold.

Accordingly, it is an object of the present invention to provide a method and an apparatus for manufacturing a microstructure having high resolution in the stacking direction and shortening the stacking time.

[0012]

In order to achieve the above object, the present invention provides a method of manufacturing a microstructure by sequentially laminating a plurality of thin films having a cross-sectional shape of a microstructure. A first step of forming the plurality of thin films at a predetermined pitch, and peeling the thin film from the substrate while relatively moving the substrate and a stage on which the plurality of thin films are stacked at the predetermined pitch And a second step of laminating the separated thin films on the stage and joining them, and forming the microstructure on the stage. . In order to achieve the above object, the present invention provides a method for simultaneously manufacturing M microstructures by sequentially laminating N thin films having a cross-sectional shape of a microstructure, the method comprising: A first step of setting M cells at a predetermined pitch and forming M thin films of the same layer in one cell;
While relatively moving the substrate and the stage on which the M × N thin films are stacked at the predetermined pitch, the M thin films were separated from one of the cells on the substrate, and the separated A second step of laminating and bonding the M thin films on the stage and forming the M microstructures on the stage. I do. Further, in order to achieve the above object, the present invention provides an apparatus for manufacturing a microstructure by sequentially laminating a plurality of thin films having a cross-sectional shape of a microstructure, the apparatus being disposed in a vacuum chamber, A substrate holder on which a substrate on which thin films are formed at a predetermined pitch is mounted; and a substrate disposed in the vacuum chamber so as to face the substrate holder and supporting the microstructure formed by laminating the plurality of thin films. A stage, a laminating means for peeling the thin film from the substrate at a position where the thin film to be laminated and the stage face each other, laminating the peeled thin film on the stage, and joining the substrate, the substrate holder and the stage Are relatively moved at the predetermined pitch, a moving means for positioning the stage on the thin film to be laminated next, and sequentially peeling the plurality of thin films from the substrate, the peeled the An apparatus for controlling the laminating means and the moving means so as to form the microstructure by laminating and bonding a number of thin films sequentially on the stage. I will provide a. According to another aspect of the present invention, there is provided an apparatus for sequentially manufacturing N pieces of microstructures by sequentially laminating N thin films having a cross-sectional shape of a microstructure, the apparatus being arranged in a vacuum chamber. N cells are set at a predetermined pitch, and a substrate holder on which a substrate on which the M thin films of the same layer are formed is placed in one cell, and the substrate holder in the vacuum chamber. A stage for supporting the M microstructures, which are arranged to face each other and are formed by laminating the N thin films, and a stage on the substrate where the M thin films to be laminated and the stage face each other; Laminating means for peeling off the M thin films from one of the cells, laminating and peeling off the M thin films on the stage, and relatively positioning the substrate holder and the stage at the predetermined position At the pitch of Moving means for positioning the stage on the M thin films in the cell, and sequentially peeling the M thin films from the N cells on the substrate; An apparatus for manufacturing a microstructure, comprising: a control means for controlling the laminating means and the moving means so as to form the M microstructures by sequentially laminating and joining them on a stage. .

[0013]

FIG. 1 shows a laminating apparatus according to an embodiment of the present invention. The laminating apparatus 1 has a vacuum chamber 2 in which a thin film carrier 3 fixed to an upper surface 4a is moved in an x-axis direction, a y-axis direction, and a θ direction around the z-axis. an xy-θ stage 4, an alignment detection unit 5 such as a CCD camera for detecting the alignment state of the thin film carrier 3, and a z stage in which a dummy substrate 6 is formed on a surface 7a and moves in the z-axis direction. 7 and the xy-θ stage 4 side and the z stage 7
Irradiate the particle beam 8 to each side, and the FAB (Fast Atom
A first particle beam emission end 9A and a second particle beam emission end 9B to be processed, and a vacuum gauge 10 for detecting a degree of vacuum in the vacuum chamber 2 are provided. Note that "F
The “AB process” is a process of irradiating the surface of a material by accelerating a particle beam, for example, an argon atom beam at a voltage of about 1 kV, and removing an oxide film, impurities, and the like on the material surface to form a clean surface. . In this embodiment, the irradiation condition of the FAB is set to an acceleration voltage of 1 to 1.5 k in accordance with the material to be processed.
V, the irradiation time is changed in the range of 1 to 10 minutes.

The xy-θ stage 4 can be used in a vacuum, and includes an x stage 40 and a y stage 41 for moving the thin film carrier 3 in the x-axis direction and the y-axis direction, respectively, And a θ stage 42 that rotates.

The z stage 7 is made of, for example, a metal such as stainless steel or an aluminum alloy. Dummy substrate 6 is 1
In order to be able to easily take out a microstructure composed of a plurality of thin films composed of a 0 mm square and stacked on the z stage 7 from the z stage 7, the surface 7a of the z stage 7 is previously set.
Formed. The material of the dummy substrate 6 is selected according to the material of the microstructure. That is, when the microstructure is formed of a metal such as aluminum, copper or nickel is selected as the material of the dummy substrate 6 and copper or nickel is plated on the surface 7a of the z stage 7 by, for example, about 5 mm.
μm is deposited. When the microstructure is formed of ceramics which are insulators such as alumina, aluminum nitride, silicon carbide, silicon nitride film, etc., aluminum is selected as the material of the dummy substrate 6 and aluminum is vacuumed on the surface 7a of the z stage 7. It is formed by an evaporation method or the like. After lamination of the thin film,
By removing only the dummy substrate 6 by etching, it is possible to remove only the minute structure without applying external force to the minute structure.
It can be easily separated from the stage 7.

FIG. 2 shows a control system of the laminating apparatus 1. The laminating apparatus 1 includes a control unit 11 that controls the entire apparatus 1, and the control unit 11 includes various types of information including a program of the control unit 11 (moving pitch information of the xy-θ stage 4).
, A vacuum pump 13 for evacuating the vacuum chamber 2, first and second particle beam emitting ends 9A, 9
A first FAB processing unit 14A and a second FAB processing unit 14B that respectively irradiate the particle beam 8 from B, an x-axis motor 40a and an x-axis position detection unit 40b that configure the x stage 40, and a y that configures the y stage 41 Shaft motor 41a
And the y-axis position detecting unit 41b, the θ motor 42a and the θ position detecting unit 42b constituting the θ stage 42, and the z-axis motor 7b and the z-axis position detecting unit 7 constituting the z stage 7.
c, the alignment detector 5, and the vacuum gauge 10
Are connected to each other. As the x-axis position detector 40b, the y-axis position detector 41b, the θ-position detector 42b, and the z-axis position detector 7c, for example, a laser interferometer or a glass scale can be used. By using these, a movement accuracy of sub-μm can be realized.

The first and second FAB processing units 14A, 1
4B is for applying an acceleration voltage of 1 to 1.5 kV to the corresponding first and second particle beam output ends 11A and 11B.

The control unit 11 moves the xy-θ stage 4 on which the thin film carrier 3 is mounted at a predetermined pitch based on the program stored in the memory 12 and the moving pitch information of the xy-θ stage 4. Each part of the stacking apparatus 1 is controlled so as to form a microstructure by sequentially stacking and bonding the surface 7a of the z-stage 7 via the dummy substrate 6 while moving the same at (for example, 10.1 mm). Has become.

Next, a method for manufacturing a microstructure using the laminating apparatus 1 having the above configuration will be described.

FIG. 3 shows a target microstructure. The microstructure 30 is composed of 16 layers, and includes three first microstructures 30A composed of large-diameter cylinders, four second microstructures 30B composed of small-diameter cylinders, and a square quadrangular prism. A case in which one third microstructure 30C and two fourth microstructures 30D formed of rectangular quadrangular prisms will be described.

FIGS. 4A to 4D show a film forming step and a patterning step. (1) Deposition First, as shown in FIG. 1A, a silicon wafer is prepared as a substrate 31, and a polyimide 32 is formed on the substrate 31 by an 8 μm spin coating method. Then, the substrate is introduced into a vacuum processing apparatus and subjected to a plasma processing using CF ₄ gas to fluorinate the surface of the polyimide 32. By this step, the release layer 33 is formed so that the thin film formed thereon can be easily separated after bonding. next,
As shown in FIG. 2B, an Al thin film is deposited to a thickness of 0.5 μm by a sputtering method. In addition, high-purity Al was used for the target, the sputtering pressure was 0.5 Pa, and the substrate 31 was used.
Is room temperature. During film formation, the film thickness is constantly monitored by a quartz crystal vibrator type film thickness meter, and the film formation is terminated when the film thickness reaches 0.5 μm. As a result, the Al thin film 3 on the substrate 31
The thickness distribution of No. 4 was 0.5 ± 0.02 μm or less. It should be noted that the microstructure 30 in which this film thickness is finally obtained is obtained.
In order to determine the resolution in the stacking direction, sufficient consideration must be given to the film thickness and the film thickness distribution.

(2) Patterning Next, as shown in FIG.
(1) A photoresist 35 is applied to the surface of the thin film 34, and the Al thin film 34 is etched by a normal photolithography method using a photomask to form a pattern (cross-sectional pattern) of the cross-sectional shape of the microstructure 30 at a time. . In this embodiment mode, a dry etching method is used. Then, using the same photomask, polyimide 32
Perform etch back. For the etching, a dry etching method is used similarly to the etching of Al, and CF ₄ is used as a gas.
And O ₂ were used. Thereafter, as shown in FIG. 4D, the resist 35 is peeled off to obtain the thin film carrier 3.

FIGS. 5A and 5B show the surface of the substrate 31 after patterning. As shown in FIG. 1A, one cell Cn includes first to fourth microstructures 30A, 30B, 3B.
An Al thin film 34 of an nth layer of 0C and 30D is formed. As shown in FIG. 2B, cells C of a predetermined size on which an Al thin film 34 having a cross-sectional pattern of the same layer is formed are arranged on a substrate 31 by a predetermined arrangement method. In the case of the present embodiment, 1 having a size of 10 × 10 mm
Cell C ₁ of the six first layer to the 16 _{layer, C 2, C 3, ...} ,
C ₁₆ is 4 at a pitch of 10.1 mm in the x and y directions.
It is arranged in a two-dimensional form of × 4. A positioning surface 31a required for alignment adjustment is formed on the substrate 31. The arrangement method may be a one-dimensional arrangement such as 1 × 16. It is important that the pitch of the cells C in any of the arrangements be accurately defined at the time of design.

(3) Introduction of Thin Film Carrier 3 into Vacuum Tank 2 FIG. 6 shows the state of introduction of the thin film carrier 3 into the vacuum chamber 2.
As shown in the figure, the thin film carrier 3 is fixed to the upper surface 4a of the xy-θ stage 4 at the lower part in the vacuum chamber 2. At this time, the thin film carrier 3 is arranged so as to abut on the three positioning pins 4b standing on the θ stage 42 of the xy-θ stage 4. That is, the positioning surface 3 of the substrate 31
1a is brought into contact with the two positioning pins 4b, and the circumferential surface 31b of the substrate 31 is brought into contact with the other positioning pin 4b.

(4) Alignment Adjustment The operator reciprocates the x-stage 40 while observing the thin-film carrier 3 in an enlarged manner with the alignment detector 5, and a line parallel to the x-axis direction on the thin-film carrier 3 is moved in the y-axis direction. The stage 42 is adjusted so as not to move. That is, the control unit 11 controls the x-axis motor 4 based on the operation of the operator.
0a to reciprocate the x stage 40,
2a is driven to rotate the θ stage 42. As the line parallel to the x-axis direction, the side 34x of the Al thin film 34 of the third and fourth square microstructures 30C and 30D can be used. With this adjustment, the x-axis direction of the cell C in the thin film carrier 3 and the x-axis direction of the xy-θ stage 4 match. At this time, the y-axis direction also matches. Then, the xy-θ stage 4 is positioned so that the cell C ₁ of the first layer is roughly located immediately below the dummy substrate 6. The positioning accuracy at this time may be 0.1 mm or less because there is a margin in the arrangement pitch of the cells C with respect to the size of the cells C, and high-precision alignment is unnecessary. This step is performed in the x-axis direction (y-axis direction) of the xy-θ stage 4.
And the x-axis direction (y-axis direction) of the cell C, it is not necessary to perform the operation in the vacuum chamber 2 in particular. The stage 4 may be taken out of the vacuum chamber 2 and may be performed using an ordinary microscope. .

(5) Evacuation of Vacuum Vessel 2 When the operator presses an evacuation switch (not shown) of the laminating apparatus 1, the control unit 11 controls the vacuum pump 13 based on the detection value of the vacuum gauge 10 to 10 ^-6 Pa inside 2
The inside of the vacuum chamber 2 is evacuated to a high vacuum state or an ultra high vacuum state.

(6) FAB Processing As shown in FIG. 1, the control unit 11 controls the first and second F
The AB processing units 14A and 14B are controlled to irradiate the surface of the dummy substrate 6 with the argon atom beam 8 from the first particle beam output end 9A, and to apply the argon atom beam to the surface of the Al thin film 34 from the second particle beam output end 9B. Irradiation of beam 8 for FAB
Perform processing. In the present embodiment, the argon atom beam 8
Was irradiated at an acceleration voltage of 1.5 kV from an oblique angle of 45 ° for 1 minute to remove a contaminant layer having a surface of about 5 nm.

(7) Thin Film Transfer FIG. 7 shows a transfer step. As shown in FIG. 7, the control unit 11 controls the z-axis motor 7b based on the detection signal of the z-axis position detection unit 7c to lower the z-stage 7 and move the dummy substrate 6 to the xy-θ stage 4 The surface of the clean dummy substrate 6 and the clean first layer cell C are brought close to the thin film carrier 3 above.
₁ is brought into contact with the surface of the thin film 34 and pressed with a predetermined load (for example, 50 kgf / cm ² ) for a predetermined time (for example, 5 minutes). Thus, the ten surface of the thin film 34 and the dummy substrate 6 in the cell C ₁ of the first layer is firmly bonded. Thereafter, the z stage 7 is returned to the original position.
The bonding force between the release layer 33 and the thin film 34 is f ₁ ,
4 f ₂ the bonding force between, when the bonding force between the thin film 34 and the dummy substrate 6 was _{f 3, f 2> f 3} > dummy substrate 6 such that the magnitude relation of f _1, the release layer 33 and The material of the thin film 34 is selected. Therefore, the thin film 34 is a thin film carrier 3
From the side to the z stage 7 side.

Next, based on the program stored in the memory 11 and the information on the moving pitch of the xy-θ stage 4, the control unit 11 moves the xy-θ stage 4 to a predetermined pitch, for example, -x axis. Move in the direction by 10.100 mm. Thus, the cell C ₂ of the second layer is located immediately below the z stage 7. In this case, be aligned by observing the pattern of the cell C ₂ of the second layer is not necessary. That is, the cell C ₂ of the second layer is located immediately below the z stage 7 by accurately matching the pitch 10.1 mm of the cell C defined in the design with the moving amount 10.1 mm of the stage 4.

Similarly, by subjecting the Al thin film 34 in the cell C ₂ of the second layer to FAB treatment and transfer, the cell C 2 of the second layer is placed on the Al thin film 34 in the cell C ₁ of the first layer. _Two Al thin films 34 are stacked. The only difference from the first step is that, in the FAB processing step, the surface of the dummy substrate 6 on the z stage 7 is not irradiated with the argon atom beam 8 at the second time, but the back surface of the thin film 34 of the first layer is used. (The surface that has been in contact with the substrate 31 via the release layer 33 until then) to clean it.

FIG. 8 shows the completed microstructure. Above
Steps (N) (16) cells C ₁~ C₁₆Number of times
By repeating, the Al thin film 34 in the N cells C becomes N
The layers on the z-stage 7 are stacked as shown in FIG.
M (10) microstructures 30A, 3 on the me substrate 6
0B, 30C, and 30D are completed collectively. Then da
By removing the me substrate 6, the microstructure 30A,
30B, 30C and 30D are obtained.

According to the above configuration, the following effects can be obtained. (A) Since the microstructure 30 is manufactured by sequentially laminating a plurality of thin films having a thickness of 0.5 μm, it is possible to increase the resolution in the laminating direction. (B) Since it is not necessary to recognize the pattern of the alignment mark for determining the relative position between the layers when the layers are stacked, the time for the position adjustment can be omitted, and the stacking time can be shortened. (C) Since a plurality of cross-sectional patterns of the microstructures 30 are arranged in an array in a cell C of 10 mm and are sequentially laminated for each cell C, various microstructures 30 are collectively collected in large quantities. Can be manufactured. (D) Since there is no need to arrange alignment marks for relative positioning between layers in each cell C, it is possible to improve the utilization efficiency of silicon feha.

The present invention is not limited to the above embodiment, but can be variously modified. For example, the thin film is copper,
An insulator such as another metal such as indium or ceramics such as alumina or silicon carbide may be used. By using these materials, the micropart can not only function as a part itself but also be used as a mold for injection molding. Further, when forming the Al thin film having the cross-sectional pattern, a line for alignment adjustment may be formed of the Al thin film, the line may be detected by the alignment detecting unit 5, and the alignment adjustment may be performed based on the detected line.
In the above embodiment, the sputtering method was described as a method for depositing a thin film on a substrate. However, other methods such as electron beam heating evaporation method, resistance heating evaporation method, and chemical vapor deposition method, and spin coating method are used. Method may be used.

[0034]

As described above, according to the present invention, a plurality of films can be formed on a substrate by using a deposition method such as a sputtering method which has good film thickness controllability and excellent film thickness uniformity over the entire substrate. Since a thin film can be formed, it is possible to increase the resolution in the stacking direction. Since the substrate or the stage is moved in accordance with the pitch of the thin film formed on the substrate, the lamination can be performed without performing pattern recognition using alignment marks, so that the lamination time can be reduced.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a laminating apparatus according to an embodiment of the present invention.

FIG. 2 is a block diagram showing a control system of the stacking apparatus according to the embodiment of the present invention.

FIG. 3 is a perspective view showing a target microstructure.

FIGS. 4A to 4D are views showing a film forming step and a patterning step.

FIGS. 5A and 5B are diagrams showing a substrate surface after patterning.

FIG. 6 is a plan view showing a state where the thin film carrier is introduced into a vacuum chamber.

FIG. 7 is a side view of the laminating apparatus showing a laminating step.

FIG. 8 is a perspective view showing a microstructure completed on a dummy substrate.

FIG. 9 is a schematic diagram showing a stereolithography method of Conventional Example 1.

FIG. 10 is a schematic diagram showing a powder method of Conventional Example 2.

FIG. 11 is a view showing a manufacturing apparatus according to a sheet laminating method of Conventional Example 3.

12 (a) to (d) are diagrams showing a manufacturing method using the thin film of Conventional Example 4 as a starting material.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Laminating apparatus 2 Vacuum tank 3 Thin film carrier 4 xy-θ stage 4a Upper surface of xy-θ stage 4b Positioning pin 5 Alignment detector 6 Dummy substrate 7 z stage 7a Surface of z stage 7b z-axis motor 7c z Axis position detection unit 8 Particle beam 9A First particle beam emission end 9B Second particle beam emission end 10 Vacuum gauge 11 Control unit 12 Memory 13 Vacuum pump 14A First FAB processing unit 14B Second FAB processing unit 30 Micro Structure 30A First microstructure 30B Second microstructure 30C Third microstructure 30D Fourth microstructure 31 Substrate 32 Polyimide 33 Release layer 34 Al thin film 35 Photoresist 40 x Stage 40a x-axis Motor 40b x-axis position detector 41 y stage 41a y-axis motor 41b y-axis position detector 42 θ Over di 42a theta motor 42b theta position detector C, C ₁ ~C ₁₆ cell Cx sides

Claims (12)

[Claims] 1. A method of manufacturing a microstructure by sequentially laminating a plurality of thin films having a cross-sectional shape of a microstructure, wherein the plurality of thin films are formed at a predetermined pitch on a substrate.
And removing the thin film from the substrate while relatively moving the substrate and a stage on which the plurality of thin films are stacked at the predetermined pitch, and stacking the separated thin film on the stage. And forming a microstructure on the stage. 2. A method for manufacturing a microstructure, comprising: 2. A method for simultaneously manufacturing N microstructures by sequentially laminating N thin films having a cross-sectional shape of a microstructure, wherein N cells are set at a predetermined pitch on a substrate. A first step of forming M thin films of the same layer in one cell, and a stage in which the substrate and the M × N thin films are stacked at a predetermined pitch relative to each other. While moving, the M thin films are separated from one of the cells on the substrate, and the separated M thin films are stacked and bonded on the stage, and the M fine films are mounted on the stage. And a second step of forming a structure. 3. The method for manufacturing a microstructure according to claim 2, wherein said M microstructures have the same shape. 4. The method for manufacturing a microstructure according to claim 2, wherein said M microstructures include those having different shapes. 5. An apparatus for manufacturing a microstructure by sequentially laminating a plurality of thin films having a cross-sectional shape of a microstructure, wherein the substrate is disposed in a vacuum chamber and the plurality of thin films are formed at a predetermined pitch. A substrate holder, on which a plurality of thin films are stacked, and the stage is arranged in the vacuum chamber so as to face the substrate holder, and the stage supports the microstructure. A laminating means for peeling the thin film from the substrate at a position facing the stage, laminating the peeled thin film on the stage and joining the substrate, the substrate holder and the stage being relatively fixed at the predetermined pitch Moving means for positioning the stage on the thin film to be laminated next; and sequentially peeling the plurality of thin films from the substrate, and placing the separated thin films on the stage. Sequential manufacturing system for a microstructure laminated by bonding, characterized in that a control means for controlling said laminating means and the moving means so as to form the micro structure. 6. The moving means moves the substrate holder and the stage relatively in an x-axis direction and a y-axis direction parallel to the surface of the substrate, a z-axis direction perpendicular to the substrate, and θ around the z-axis. The apparatus for manufacturing a microstructure according to claim 5, further comprising a moving mechanism for moving the microstructure in a direction. 7. The moving means includes an image pickup means for picking up an image of the substrate on which the plurality of thin films are formed, and the control means controls the movement based on the image picked up by the image pickup means. 7. The microstructure manufacturing apparatus according to claim 6, wherein the initial position is adjusted by controlling a mechanism. 8. An apparatus for simultaneously manufacturing M microstructures by sequentially laminating N thin films having a cross-sectional shape of a microstructure, wherein the N cells are arranged in a vacuum chamber and N cells are provided in a predetermined manner. A substrate holder, which is set at a pitch, and on which a substrate on which the M thin films of the same layer are formed in one cell is placed; and the N holders are arranged in the vacuum chamber so as to face the substrate holder. A stage for supporting the M microstructures formed by laminating the thin films of the above; and M cells from one of the cells on the substrate at a position where the M thin films to be laminated and the stage face each other. Laminating means for peeling off the M thin films on the stage and bonding the peeled M thin films on the stage; and moving the substrate holder and the stage relatively at the predetermined pitch. On the M thin films in the cell Moving means for positioning the stage, the M thin films are sequentially peeled from the N cells on the substrate, and the peeled M thin films are sequentially laminated and bonded on the stage. An apparatus for manufacturing a microstructure, comprising: a control unit that controls the laminating unit and the moving unit so as to form M microstructures. 9. The apparatus according to claim 8, wherein said M microstructures have the same shape. 10. The apparatus for manufacturing a microstructure according to claim 8, wherein said M microstructures include those having different shapes. 11. The moving means includes means for moving the substrate holder and the stage relatively in an x-axis direction and a y-axis direction parallel to a surface of the substrate, a z-axis direction perpendicular to the substrate, and a z-axis direction.
The manufacturing apparatus for a microstructure according to claim 5, further comprising a moving mechanism configured to move the microstructure in a θ direction around the axis. 12. The moving means includes an image pickup means for picking up an image of the substrate on which the M thin films are respectively formed in the N cells, and wherein the control means is picked up by the image pickup means. 12. The apparatus for manufacturing a micro structure according to claim 11, wherein the initial position is adjusted by controlling the moving mechanism based on the image.