JP2000108024A - Cmp polishing device - Google Patents
Cmp polishing deviceInfo
- Publication number
- JP2000108024A JP2000108024A JP28107198A JP28107198A JP2000108024A JP 2000108024 A JP2000108024 A JP 2000108024A JP 28107198 A JP28107198 A JP 28107198A JP 28107198 A JP28107198 A JP 28107198A JP 2000108024 A JP2000108024 A JP 2000108024A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- turntable
- heads
- center
- cmp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば、半導体ウ
エハのポリッシングに使用されるＣＭＰ研磨装置に係
る。The present invention relates to a CMP polishing apparatus used for polishing a semiconductor wafer, for example.
【０００２】[0002]
【従来の技術】現在、実用化されているＣＭＰ研磨装置
（Chemical Mechanical Polishing Machine ）では、被
加工物であるウエハの数倍の直径を有するターンテーブ
ルを使用し、このターンテーブルの上面に研磨布を貼り
付けるとともに、研磨ヘッドの下面にウエハを装着し
て、ウエハのポリッシングを行っている。2. Description of the Related Art At present, a CMP polishing apparatus (Chemical Mechanical Polishing Machine) which is practically used uses a turntable having a diameter several times that of a wafer to be processed, and a polishing cloth is provided on an upper surface of the turntable. And polishing the wafer by mounting the wafer on the lower surface of the polishing head.
【０００３】この様な装置では、大きな直径のターンテ
ーブルが必要となる。特に、ウエハの直径が２００ｍｍ
（８インチ）、３００ｍｍ（１２インチ）と大きくなる
につれて、ターンテーブルの直径は、例えば５５０ｍ
ｍ、８５０ｍｍと極めて大きなものになっている。In such an apparatus, a turntable having a large diameter is required. In particular, if the diameter of the wafer is 200 mm
(8 inches) and 300 mm (12 inches), the diameter of the turntable becomes, for example, 550 m.
m, 850 mm.
【０００４】その結果、 ａ）ターンテーブルの直径及び重量が増大するに従っ
て、ターンテーブルの回転数を上げることが次第に困難
になり、加工能率を上げることができない。As a result, a) as the diameter and weight of the turntable increase, it becomes increasingly difficult to increase the number of revolutions of the turntable, and it is not possible to increase the machining efficiency.
【０００５】ｂ）ターンテーブルの直径の増大に伴い、
研磨布の交換作業の手間が増大する。B) As the diameter of the turntable increases,
The work of replacing the polishing cloth increases.
【０００６】ｃ）装置全体の大きさ及び重量が更に増大
するので、それを収容するためのクリーンルームの設置
条件に対する制約が増え、建設コストも増大する。C) As the size and weight of the entire apparatus further increases, the restrictions on the installation conditions of the clean room for accommodating the apparatus increase, and the construction cost also increases.
【０００７】なお、上記の様な、大口径のウエハのポリ
シングに関する問題に対処すべく、特開平９−１５５７
３３号公報及び特開平１０−０７１５６２号公報には、
被加工物であるウエハよりも小さな直径の複数の研磨布
及び研磨ヘッドを使用して、ウエハのポリッシングを行
うＣＭＰ研磨装置が記載されている。それらＣＭＰ研磨
装置では、従来の配置とは反対に、ターンテーブルの上
面に被加工物であるウエハを装着するとともに、研磨ヘ
ッドの下面に研磨布を装着してウエハのポリッシングを
行っている。しかし、上記の公報中には、これらＣＭＰ
研磨装置における研磨ヘッドの配置及び動作条件等の詳
細については、記載されていない。In order to cope with the above-mentioned problem relating to polishing of a large-diameter wafer, Japanese Patent Application Laid-Open No. 9-1557 has been proposed.
No. 33 and Japanese Unexamined Patent Application Publication No. 10-075562,
A CMP polishing apparatus for polishing a wafer by using a plurality of polishing cloths and a polishing head having a smaller diameter than a wafer to be processed is described. In these CMP polishing apparatuses, contrary to the conventional arrangement, a wafer as a workpiece is mounted on an upper surface of a turntable, and a polishing cloth is mounted on a lower surface of a polishing head to polish the wafer. However, in the above publication, these CMPs
No details are given on the arrangement and operating conditions of the polishing head in the polishing apparatus.
【０００８】[0008]
【発明が解決しようとする課題】本発明は、以上の様な
従来のＣＭＰ研磨装置の問題点に鑑み成されたもので、
本発明の目的は、装置のサイズ及び重量の増加が従来の
装置と比べて小さく、大口径のウエハのポリシングを行
うことが可能で、且つ高い加工能率及び平面精度を備え
たＣＭＰ研磨装置を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the problems of the conventional CMP polishing apparatus as described above.
SUMMARY OF THE INVENTION An object of the present invention is to provide a CMP polishing apparatus capable of polishing a large-diameter wafer with a small increase in the size and weight of the apparatus as compared with a conventional apparatus, and having a high processing efficiency and high plane accuracy. Is to do.
【０００９】[0009]
【課題を解決するための手段】本発明のＣＭＰ研磨装置
は、上面に円板状の被加工物が装着され、回転駆動され
るターンテーブルと、前記ターンテーブルに対向してそ
の上方に配置され、下面に研磨工具が装着され、前記被
加工物の直径よりも小さい直径を有し、回転駆動される
とともに前記ターンテーブルの半径方向の往復運動を行
う複数の研磨ヘッドとを備え、前記各研磨工具の研磨面
を前記被加工物の表面に押し付けて研磨を行うＣＭＰ研
磨装置において、前記複数の研磨ヘッドは、前記往復運
動の基準位置において、前記被加工物の中心から外周部
までの半径方向の全部位を隙間無くカバーする様に配置
されるとともに、前記ターンテーブルの中心側に位置す
る研磨ヘッドから外周側に位置する研磨ヘッドに移るに
従って、研磨ヘッドの前記往復運動の速度が次第に低速
になる様に設定する制御機構を備えたことを特徴とす
る。A CMP polishing apparatus according to the present invention has a disk-shaped workpiece mounted on an upper surface thereof, and is provided with a turntable that is driven to rotate, and is disposed above and opposed to the turntable. A polishing tool mounted on the lower surface, having a diameter smaller than the diameter of the workpiece, a plurality of polishing heads that are driven to rotate and reciprocate in the radial direction of the turntable, In a CMP polishing apparatus that performs polishing by pressing a polishing surface of a tool against the surface of the workpiece, the plurality of polishing heads are arranged at a reference position of the reciprocating motion in a radial direction from a center to an outer peripheral portion of the workpiece. Are arranged so as to cover all parts of the turntable without gaps, and the polishing head is moved from the polishing head located on the center side of the turntable to the polishing head located on the outer peripheral side. Wherein the speed of the reciprocating movement of the progressively provided with a control mechanism for setting so as to become slower.
【００１０】本発明のＣＭＰ研磨装置によれば、研磨ヘ
ッドの配置及び往復運動速度を上記の様に設定すること
によって、被加工物の中心側と外周側との間の周速の相
違に基づく研磨速度の相違を打ち消して研磨量の面内均
一性を確保することができる。その結果、高い平面精度
を備えた被研磨面を得ることができる。According to the CMP polishing apparatus of the present invention, the arrangement of the polishing head and the reciprocating speed are set as described above, so that the difference in the peripheral speed between the center side and the outer peripheral side of the workpiece can be obtained. The difference in the polishing rate can be canceled to ensure the in-plane uniformity of the polishing amount. As a result, a polished surface having high planarity can be obtained.
【００１１】好ましくは、前記複数の研磨ヘッドを同一
の直径で構成するとともに、前記往復運動の基準位置に
おいて、前記ターンテーブルの中心から前記各研磨ヘッ
ドの中心までの距離が等間隔に分布する様に配置する。Preferably, the plurality of polishing heads have the same diameter, and the distance from the center of the turntable to the center of each of the polishing heads is distributed at equal intervals at the reference position of the reciprocating motion. To place.
【００１２】好ましくは、前記複数の研磨ヘッドの直径
を、前記円板状の被加工物の半径を研磨ヘッドの数で割
った値の１００％以上、１２０％以下程度に設定する。Preferably, the diameter of the plurality of polishing heads is set to be about 100% to about 120% of a value obtained by dividing the radius of the disk-shaped workpiece by the number of polishing heads.
【００１３】好ましくは、前記制御機構は、前記ターン
テーブルの中心側に位置する研磨ヘッドから外周側に位
置する研磨ヘッドに移るに従って、研磨ヘッドの回転速
度が次第に低速になる様に設定する機能を、更に備え
る。Preferably, the control mechanism has a function of setting the rotation speed of the polishing head to gradually decrease as the polishing head moves from the polishing head located on the center side of the turntable to the polishing head located on the outer peripheral side. , Furthermore.
【００１４】好ましくは、前記制御機構は、前記各研磨
ヘッドの前記被加工物の表面に対する押し付け力をそれ
ぞれ独立に制御する機能を、更に備える。Preferably, the control mechanism further has a function of independently controlling a pressing force of each of the polishing heads against a surface of the workpiece.
【００１５】[0015]
【発明の実施の形態】図１及び図２に、本発明に基づく
ＣＭＰ研磨装置の一例を示す。なお、図１は平面図、図
２は正面図である。図中、１はウエハ（被加工物）、２
は研磨布（研磨工具）、３はターンテーブル、４ａ、４
ｂ、４ｃは研磨ヘッド、５ａ、５ｂ、５ｃは往復運動機
構、６は研磨剤供給ノズルを表す。1 and 2 show an example of a CMP polishing apparatus according to the present invention. 1 is a plan view and FIG. 2 is a front view. In the figure, 1 is a wafer (workpiece), 2
Is a polishing cloth (polishing tool), 3 is a turntable, 4a, 4
Reference numerals b and 4c denote polishing heads, 5a, 5b and 5c denote reciprocating mechanisms, and 6 denotes an abrasive supply nozzle.
【００１６】ウエハ１は、ターンテーブル３の上面に装
着される。ターンテーブル３の上方には、ターンテーブ
ル３に対向して、３個の研磨ヘッド４ａ、４ｂ、４ｃが
配置されている。各研磨ヘッド４ａ、４ｂ、４ｃの下面
には、それぞれ研磨布２が装着される。各研磨ヘッド４
ａ、４ｂ、４ｃは、回転駆動されるとともに、往復運動
機構５ａ、５ｂ、５ｃによってターンテーブル３の半径
方向の往復運動が与えられる。また、ターンテーブル３
の中心近傍の上方には、研磨剤供給ノズル６が配置され
ている。The wafer 1 is mounted on the upper surface of the turntable 3. Above the turntable 3, three polishing heads 4a, 4b, and 4c are arranged so as to face the turntable 3. A polishing cloth 2 is mounted on the lower surface of each of the polishing heads 4a, 4b, 4c. Each polishing head 4
a, 4b, 4c are driven to rotate, and reciprocating motion of the turntable 3 in the radial direction is given by reciprocating mechanisms 5a, 5b, 5c. Also, turntable 3
The abrasive supply nozzle 6 is disposed above the vicinity of the center.
【００１７】図３に示す様に、研磨ヘッド４ａ、４ｂ、
４ｃの各々は、同一の直径を有するとともに、その往復
運度の基準位置において、ターンテーブル３の中心から
各研磨ヘッドの中心までの距離が等間隔に分布する様に
配置され、更に、その往復運度の基準位置において、ウ
エハ１の中心から外周部までの半径方向の全部位を隙間
無くカバーする様に配置されている。なお、研磨ヘッド
４ａ、４ｂ、４ｃの下面に装着される研磨布２は、研磨
ヘッドとほぼ同一の直径を有している。As shown in FIG. 3, polishing heads 4a, 4b,
4c have the same diameter, and are arranged such that the distance from the center of the turntable 3 to the center of each polishing head is distributed at equal intervals at the reference position of the reciprocating mobility. At the reference position of the mobility, the wafer 1 is arranged so as to cover all radial portions from the center of the wafer 1 to the outer peripheral portion without any gap. The polishing cloth 2 mounted on the lower surfaces of the polishing heads 4a, 4b, 4c has substantially the same diameter as the polishing head.
【００１８】即ち、研磨ヘッド４ａ、４ｂ、４ｃの直径
及び配置は、以下の式で与えられる。That is, the diameter and arrangement of the polishing heads 4a, 4b, 4c are given by the following equations.
【００１９】ＤＨ ＝ＤＷ÷（２Ｎ） ＲＨｉ＝（２ｉ−１）×ＤＷ÷（２Ｎ） Δθ ＝３６０度÷Ｎ 但し、 ＤＷ ：ウエハの直径 Ｎ ：研磨ヘッドの数（この例ではＮ＝３） ｉ ：研磨ヘッドの識別番号（ｉ＝１，２，３，・・
・） ＤＨ ：研磨ヘッドの直径 ＲＨｉ：ターンテーブルの中心から基準位置における各
研磨ヘッドの中心までの距離 Δθ ：互いに隣接する研磨ヘッドｉと研磨ヘッドｉ＋
１との間の、ターンテーブルの円周方向についての角度 また、上記のＣＭＰ装置の制御機構（図示せず）は、各
研磨ヘッド４ａ、４ｂ、４ｃの前記往復運動の速度を、
ターンテーブル３の中心側に位置する研磨ヘッドから外
周側に位置する研磨ヘッドに移るに従って、次第に低速
になる様に設定する機能を備えている。DH = DW ÷ (2N) RHi = (2i−1) × DW ÷ (2N) Δθ = 360 ° ÷ N where DW: diameter of wafer N: number of polishing heads (N = 3 in this example) i: Identification number of polishing head (i = 1, 2, 3,...)
·) DH: diameter of polishing head RHi: distance from center of turntable to center of each polishing head at reference position Δθ: polishing head i and polishing head i + adjacent to each other
1, the angle of the turntable in the circumferential direction. The control mechanism (not shown) of the above-described CMP apparatus determines the speed of the reciprocating motion of each of the polishing heads 4a, 4b, and 4c.
A function is provided to set the speed gradually lower as the polishing head moves from the polishing head located on the center side of the turntable 3 to the polishing head located on the outer peripheral side.
【００２０】なお、上記のＣＭＰ装置に、各研磨ヘッド
４ａ、４ｂ、４ｃの回転速度を、ターンテーブル３の中
心側に位置する研磨ヘッドから外周側に位置する研磨ヘ
ッドに移るに従って次第に低速になる様に設定する機能
を、更に設けることによって、研磨量の面内均一性を更
に改善することができる。In the above-described CMP apparatus, the rotational speed of each of the polishing heads 4a, 4b, 4c gradually becomes lower as the rotation speed of the polishing head located on the center side of the turntable 3 is shifted to the polishing head located on the outer peripheral side. By further providing the function of setting in such a manner, the in-plane uniformity of the polishing amount can be further improved.
【００２１】同様に、上記のＣＭＰ装置に、各研磨ヘッ
ドのウエハ１の表面に対する押し付け力をそれぞれ独立
に制御する機能を、更に設けることによって、研磨量の
面内均一性を更に改善することができる。Similarly, the above-described CMP apparatus is further provided with a function of independently controlling the pressing force of each polishing head against the surface of the wafer 1, thereby further improving the in-plane uniformity of the polishing amount. it can.
【００２２】なお、図１及び図２に示した装置におい
て、研磨工具として研磨布２に代わってＣＭＰ砥石を使
用することもできる。ＣＭＰ砥石を使用する場合、乾式
研摩が可能なので、研摩剤供給ノズル６を省略すること
ができる。In the apparatus shown in FIGS. 1 and 2, a CMP grindstone can be used instead of the polishing cloth 2 as a polishing tool. When a CMP grindstone is used, since dry polishing is possible, the abrasive supply nozzle 6 can be omitted.
【００２３】[0023]
【発明の効果】本発明のＣＭＰ研磨装置によれば、被加
工物の直径よりも小さな直径の研磨ヘッドを使用してい
るので、例えば１２インチウエハの様な、大口径の被加
工物に対応する場合にも、装置全体のサイズ及び重量を
比較的小さく抑えることができる。また、研磨ヘッドの
回転速度を高く設定することが可能なので、大きな研磨
速度を確保することができる。According to the CMP polishing apparatus of the present invention, since a polishing head having a smaller diameter than the diameter of the workpiece is used, it is applicable to a large-diameter workpiece such as a 12-inch wafer. In this case, the size and weight of the entire apparatus can be kept relatively small. In addition, since the rotation speed of the polishing head can be set high, a high polishing speed can be secured.
【００２４】更に、研磨ヘッドの半径方向の往復運動速
度を、ターンテーブルの中心側に位置する研磨ヘッドか
ら外周側に位置する研磨ヘッドに移るに従い次第に低速
になる様に設定することによって、被加工物の中心側と
外周側との間の周速の相違に基づく研磨速度の相違を打
ち消して研磨量の面内均一性を改善することができる。
その結果、高い平面精度を備えた被研磨面を得ることが
できる。Further, by setting the reciprocating speed of the polishing head in the radial direction to gradually decrease as the polishing head moves from the polishing head located on the center side of the turntable to the polishing head located on the outer peripheral side. The difference in polishing rate based on the difference in peripheral speed between the center side and the outer peripheral side of the object can be canceled to improve the in-plane uniformity of the polishing amount.
As a result, a polished surface having high planarity can be obtained.
【図１】本発明のＣＭＰ装置の概要を示す平面図。FIG. 1 is a plan view showing an outline of a CMP apparatus according to the present invention.
【図２】本発明のＣＭＰ装置の概要を示す正面図。FIG. 2 is a front view showing the outline of the CMP apparatus of the present invention.
【図３】本発明のＣＭＰ装置における研磨ヘッドの配置
を示す図。FIG. 3 is a view showing an arrangement of a polishing head in the CMP apparatus of the present invention.
１・・・ウエハ、 ２・・・研磨布、 ３・・・ターンテーブル、 ４ａ、４ｂ、４ｃ・・・研磨ヘッド、 ５ａ、５ｂ、５ｃ・・・往復運動機構、 ６・・・研磨剤供給ノズル。 DESCRIPTION OF SYMBOLS 1 ... Wafer, 2 ... Polishing cloth, 3 ... Turntable, 4a, 4b, 4c ... Polishing head, 5a, 5b, 5c ... Reciprocating motion mechanism, 6 ... Abrasive supply nozzle.
Claims (6)
転駆動されるターンテーブルと、 前記ターンテーブルに対向してその上方に配置され、下
面に研磨工具が装着され、前記被加工物の直径よりも小
さい直径を有し、回転駆動されるとともに前記ターンテ
ーブルの半径方向の往復運動を行う複数の研磨ヘッドと
を備え、 前記各研磨工具の研磨面を前記被加工物の表面に押し付
けて研磨を行うＣＭＰ研磨装置において、 前記複数の研磨ヘッドは、前記往復運動の基準位置にお
いて、前記被加工物の中心から外周部までの半径方向の
全部位を隙間無くカバーする様に配置されるとともに、 前記ターンテーブルの中心側に位置する研磨ヘッドから
外周側に位置する研磨ヘッドに移るに従って、研磨ヘッ
ドの前記往復運動の速度が次第に低速になる様に設定す
る制御機構を備えたことを特徴とするＣＭＰ研磨装置。1. A turntable, on which a disk-shaped workpiece is mounted on an upper surface and driven to rotate, and disposed above and opposed to the turntable, a polishing tool is mounted on a lower surface, and the workpiece is A plurality of polishing heads having a diameter smaller than the diameter of the object, being driven to rotate and reciprocating in the radial direction of the turntable, the polishing surface of each of the polishing tools is provided on the surface of the workpiece. In a CMP polishing apparatus that performs polishing by pressing, the plurality of polishing heads are arranged at the reference position of the reciprocating motion so as to cover all radial portions from the center to the outer peripheral portion of the workpiece without gaps. In addition, as the polishing head moves from the polishing head located on the center side of the turntable to the polishing head located on the outer peripheral side, the speed of the reciprocating motion of the polishing head gradually decreases. CMP polishing apparatus characterized by comprising a control mechanism for setting as.
有するとともに、前記往復運動の基準位置において、前
記ターンテーブルの中心から前記各研磨ヘッドの中心ま
での距離が等間隔に分布する様に配置されていることを
特徴とする請求項１に記載のＣＭＰ研磨装置。2. The polishing heads have the same diameter, and at the reference position of the reciprocating motion, the distance from the center of the turntable to the center of each polishing head is distributed at equal intervals. The CMP polishing apparatus according to claim 1, wherein the apparatus is arranged.
前記円板状の被加工物の半径を前記複数の研磨ヘッドの
数で割った値の１００％以上、１２０％以下であること
を特徴とする請求項２に記載のＣＭＰ研磨装置。3. The polishing head according to claim 1, wherein each of the plurality of polishing heads has a diameter.
3. The CMP polishing apparatus according to claim 2, wherein a value obtained by dividing a radius of the disk-shaped workpiece by the number of the plurality of polishing heads is 100% or more and 120% or less. 4.
記複数の研磨ヘッドの数をＮとするとき、前記ターンテ
ーブルの中心から前記各研磨ヘッドの中心の基準位置ま
での距離ＲＨが、ｉを１以上の整数として、 ＲＨ＝（２ｉ−１）×ＤＷ÷（２Ｎ） で与えられるとともに、 互いに隣接する研磨ヘッドの間の前記ターンテーブルの
円周方向についての角度Δθが、 Δθ＝３６０度÷Ｎ で与えられることを特徴とする請求項３に記載のＣＭＰ
研磨装置。4. A distance RH from the center of the turntable to a reference position of the center of each of the polishing heads, where DW is the diameter of the disk-shaped workpiece and N is the number of the plurality of polishing heads. Is given by RH = (2i-1) × DW ÷ (2N), where i is an integer of 1 or more, and the angle Δθ between the polishing heads adjacent to each other in the circumferential direction of the turntable is Δθ 4. The CMP of claim 3, wherein:
Polishing equipment.
中心側に位置する研磨ヘッドから外周側に位置する研磨
ヘッドに移るに従って、研磨ヘッドの回転速度が次第に
低速になる様に設定する機能を、更に備えたことを特徴
とする請求項１に記載のＣＭＰ研磨装置。5. The function of the control mechanism for setting the rotation speed of the polishing head to gradually decrease as the polishing head moves from the polishing head located on the center side of the turntable to the polishing head located on the outer peripheral side. The CMP polishing apparatus according to claim 1, further comprising:
記被加工物の表面に対する押し付け力をそれぞれ独立に
制御する機能を、更に備えたことを特徴とする請求項１
に記載のＣＭＰ研磨装置。6. The control mechanism according to claim 1, further comprising a function of independently controlling a pressing force of each of the polishing heads against a surface of the workpiece.
3. The CMP polishing apparatus according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28107198A JP2000108024A (en) | 1998-10-02 | 1998-10-02 | Cmp polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28107198A JP2000108024A (en) | 1998-10-02 | 1998-10-02 | Cmp polishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000108024A true JP2000108024A (en) | 2000-04-18 |
Family
ID=17633922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28107198A Pending JP2000108024A (en) | 1998-10-02 | 1998-10-02 | Cmp polishing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000108024A (en) |
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