JP2000105475A - Electrophotographic photoreceptor, process cartridge and electrophotographic device - Google Patents

Electrophotographic photoreceptor, process cartridge and electrophotographic device

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Publication number
JP2000105475A
JP2000105475A JP11217221A JP21722199A JP2000105475A JP 2000105475 A JP2000105475 A JP 2000105475A JP 11217221 A JP11217221 A JP 11217221A JP 21722199 A JP21722199 A JP 21722199A JP 2000105475 A JP2000105475 A JP 2000105475A
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JP
Japan
Prior art keywords
substituent
group
aromatic ring
represented
represent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11217221A
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Japanese (ja)
Other versions
JP2000105475A5 (en
JP4136209B2 (en
Inventor
Norihiro Kikuchi
憲裕 菊地
Mitsuhiro Kunieda
光弘 國枝
Tetsuo Kanamaru
哲郎 金丸
Yuka Nakajima
由香 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP21722199A priority Critical patent/JP4136209B2/en
Publication of JP2000105475A publication Critical patent/JP2000105475A/en
Publication of JP2000105475A5 publication Critical patent/JP2000105475A5/ja
Application granted granted Critical
Publication of JP4136209B2 publication Critical patent/JP4136209B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Photoreceptors In Electrophotography (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an electrophotographic photoreceptor having high sensitivity even in the wavelength region of 380 to 500 nm and small potential changes by repeated use or by environment, and to provide a process cartridge and electrophotographic device from which a high-quality output image can be practically and stably obtd. when they are used in combination with the above photoreceptor and a short wavelength laser. SOLUTION: This electrophotographic photoreceptor has a photosensitive layer on a supporting body, and is irradiated with light from a semiconductor laser light having a wavelength of 380 to 500 nm. The photosensitive layer contains a charge transport material having the structure expressed by the formula. In the formula, Ar1-1 and Ar1-2 are aromatic cyclic groups which may have substituents, R1-1 to R1-4 are alkyl groups which may have substituents, aralkyl group which may have substituents, vinyl groups which may have substituents or aromatic cyclic groups which may have substituents, (however, at least two of R1-1 to R1-4 are aromatic cyclic groups which may have substituents), and R1-1 and R1-2, and R1-3 and R1-4 may be combined to form rings.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電子写真感光体、
プロセスカートリッジ及び電子写真感光体に関し、詳し
くは画像の高解像度化が可能な短波長の半導体レーザー
に適した電子写真感光体及びプロセスカートリッジ及び
短波長の半導体レーザーを露光光源として有する電子写
真装置に関する。
The present invention relates to an electrophotographic photoreceptor,
More particularly, the present invention relates to an electrophotographic photosensitive member suitable for a short-wavelength semiconductor laser capable of increasing the resolution of an image, a process cartridge, and an electrophotographic apparatus having a short-wavelength semiconductor laser as an exposure light source.

【0002】[0002]

【従来の技術】現在、レーザープリンターなどに代表さ
れるレーザーを光源として使用している電子写真装置に
おいて使用されているレーザーは、800nm付近ある
いは680nm付近に発振波長を有する半導体レーザー
が主流である。近年、出力画像の高画質化のニーズの高
まりから、高解像度化に向けた様々なアプローチがなさ
れている。レーザーの波長もこの高解像度化に深く関わ
っており、特開平9−240051号公報にも記載され
ている様に、レーザーの発振波長が短くなるほど、レー
ザーのスポット径を小さくすることが可能となり、高解
像度の潜像形成が可能となる。
2. Description of the Related Art At present, a semiconductor laser having an oscillation wavelength around 800 nm or around 680 nm is mainly used in an electrophotographic apparatus using a laser as a light source such as a laser printer. In recent years, various approaches for achieving higher resolution have been made due to a growing need for higher image quality of output images. The wavelength of the laser is also deeply involved in this high resolution, and as described in Japanese Patent Application Laid-Open No. 9-240051, the shorter the oscillation wavelength of the laser, the smaller the spot diameter of the laser becomes. A high-resolution latent image can be formed.

【0003】レーザーの発振波長の短波長化には、いく
つかの手法が挙げられる。
There are several techniques for shortening the laser oscillation wavelength.

【0004】一つは、非線形光学材料を利用し、第2高
調波発生(SHG)を用いてレーザー光の波長を2分の
1にするものである(特開平9−275242号公報、
特開平9−189930号公報及び特開平5−3130
33号公報など)。この系は、一次光源として、既に技
術が確立し、高出力可能なGaAs半導体レーザーやY
AGレーザーを使用することができるため、長寿命化や
大出力化が可能である。
One is to use a nonlinear optical material and reduce the wavelength of a laser beam to a half by using second harmonic generation (SHG) (Japanese Patent Laid-Open No. 9-275242,
JP-A-9-189930 and JP-A-5-3130
No. 33 publication). This system has already been established as a primary light source, and a GaAs semiconductor laser or Y
Since an AG laser can be used, a long life and a large output can be achieved.

【0005】もう一つは、ワイドギャップ半導体を用い
るもので、SHG利用のデバイスと比べ、装置の小型化
が可能である。ZnSe系半導体レーザー(特開平7−
321409号公報及び特開平6−334272号公報
など)やGaN系半導体レーザー(特開平8−0884
41号公報及び特開平7−335975号公報など)
が、その発光効率の高さから、以前から多くの研究の対
象となっている。
The other uses a wide-gap semiconductor, and can reduce the size of the device as compared with a device using SHG. ZnSe based semiconductor laser (Japanese Unexamined Patent Publication No.
JP-A-321409 and JP-A-6-334272) and GaN-based semiconductor lasers (JP-A-8-0884).
No. 41 and JP-A-7-335975)
However, due to its high luminous efficiency, it has been the subject of much research for some time.

【0006】これらの半導体レーザーは素子構造、結晶
成長条件及び電極などの最適化が難しく、結晶中の欠陥
などにより、実用化に必須である室温での長時間発振が
困難であった。
[0006] In these semiconductor lasers, it is difficult to optimize the element structure, crystal growth conditions, electrodes, and the like, and it is difficult to perform long-term oscillation at room temperature, which is essential for practical use, due to defects in the crystal.

【0007】ところが、基盤等の技術革新が進み、19
97年10月には、GaN系半導体レーザーで1150
時間連続発振(50℃条件)が報告されるなど、実用化
が目前に迫っている状態である。
[0007] However, technological innovations such as the base have progressed, and 19
In October 1997, GaN based semiconductor laser
Practical use is imminent, as reported by continuous time oscillation (50 ° C. condition).

【0008】[0008]

【発明が解決しようとする課題】従来のレーザーを用い
た電子写真装置に使用される電子写真感光体は、700
〜800nm付近の波長域で実用的な感度特性を発現す
るよう設計されてきた。しかしながら、従来のこれらの
電子写真感光体を、400〜500nmに発振波長を有
する半導体レーザーを用いた電子写真装置に組み込んで
も、実用的な感度特性を得ることができない。その主な
理由は、従来の長波長レーザー用感光体に使用されてい
る電荷発生物質、具体的には無金属フタロシアニン、銅
フタロシアニン及びオキシチタニウムフタロシアニンな
どの金属フタロシアニン、及び一部のアゾ顔料などは、
400〜500nm付近には十分な吸収帯がなく、こう
した波長域では十分なキャリアが発生しないためであ
る。
An electrophotographic photosensitive member used in a conventional laser-based electrophotographic apparatus is 700
It has been designed to exhibit practical sensitivity characteristics in a wavelength range of about 800 nm. However, even if these conventional electrophotographic photoreceptors are incorporated in an electrophotographic apparatus using a semiconductor laser having an oscillation wavelength of 400 to 500 nm, practical sensitivity characteristics cannot be obtained. The main reason is that charge generation substances used in conventional long-wavelength laser photoconductors, specifically, metal-free phthalocyanines, metal phthalocyanines such as copper phthalocyanine and oxytitanium phthalocyanine, and some azo pigments are ,
This is because there is no sufficient absorption band near 400 to 500 nm, and sufficient carriers are not generated in such a wavelength range.

【0009】また、400〜500nm付近に十分な吸
収帯を有する電荷発生物質を用いた場合でも、十分な感
度特性が得られるとは限らない。電子写真感光体は近
年、電荷キャリアの発生と電荷の移動の機能を別々に層
に分担させる、いわゆる積層型(機能分離型)が高感度
化に有利なことから、研究開発及び製品の主流となって
いる。導電性支持体上に電荷発生層と電荷輸送層がこの
順に積層された感光体では、レーザー光が電荷輸送層を
透過して電荷発生層に到達した場合にのみ感度を発現す
る。しかし400〜500nm付近の短波光の吸収係数
の大きい電荷輸送物質を用いた感光体は、電荷発生層ま
で光が十分に届かないため、400〜500nmの光の
吸収の大きな電荷発生物質を使用したとしても十分な感
度を示さない。
Further, even when a charge generating substance having a sufficient absorption band around 400 to 500 nm is used, it is not always possible to obtain sufficient sensitivity characteristics. In recent years, electrophotographic photoreceptors, in which the function of generating charge carriers and the function of transferring charges are separately assigned to layers, a so-called stacked type (separated type) is advantageous for high sensitivity. Has become. In a photoreceptor in which a charge generation layer and a charge transport layer are laminated in this order on a conductive support, sensitivity is exhibited only when the laser beam passes through the charge transport layer and reaches the charge generation layer. However, a photoreceptor using a charge transport material having a large absorption coefficient of short-wave light in the vicinity of 400 to 500 nm does not sufficiently reach the charge generation layer, and therefore, a charge generation material having a large absorption of light of 400 to 500 nm is used. Does not show sufficient sensitivity.

【0010】さらに、400〜500nm付近に十分な
吸収帯を有する電荷発生物質を使用した感光体と400
nm付近の光源を組み合わせた場合、従来の長波長光源
用感光体と長波長光源を組み合わせた場合と比較して、
繰り返し使用した際に感光体の電位変動が大きかった
り、画像においてゴースト現象等の画像欠陥を生じ易い
ことが本発明者らの検討により明らかになった。この一
因として、短波長の強いエネルギーの光の照射により電
荷発生層で発生した励起子及び電荷キャリアの一部が、
電子写真プロセスで消費されずに感光層内に蓄積してい
き、感光体の帯電能や感度特性を変化させることが考え
られる。本発明者らは、このような励起子やキャリア
は、電荷輸送物質や他の化合物との電子移動反応により
蓄積を抑えることが可能であることを見い出した。つま
り、繰り返し使用時の電位変動やメモリー現象を抑制さ
せ、安定した高品位な画像を得るために、最適な電荷輸
送物質が存在するのである。
Further, a photoreceptor using a charge generating substance having a sufficient absorption band around 400 to 500 nm is provided.
When the light source near nm is combined, compared with the case where the conventional long wavelength light source photoconductor and the long wavelength light source are combined,
The inventors of the present invention have clarified that the potential fluctuation of the photoreceptor is large when repeatedly used and image defects such as a ghost phenomenon easily occur in an image. One reason for this is that some of the excitons and charge carriers generated in the charge generation layer by irradiation with light of short wavelength and high energy are
It is conceivable to accumulate in the photosensitive layer without being consumed in the electrophotographic process, thereby changing the charging ability and sensitivity characteristics of the photoreceptor. The present inventors have found that such excitons and carriers can be suppressed from accumulating by an electron transfer reaction with a charge transport substance or another compound. In other words, there is an optimal charge transport material for suppressing potential fluctuations and memory phenomena during repeated use and obtaining a stable and high-quality image.

【0011】また近年、電子写真感光体を使用したプリ
ンターなどは多種多様な分野で使用されるようになり、
より様々な環境においても常に安定した画像を提供する
ことがさらに厳しく要求されている。
In recent years, printers and the like using electrophotographic photosensitive members have been used in various fields.
There is a more stringent demand for always providing stable images even in various environments.

【0012】本発明の目的は、380〜500nmの波
長域でも高い感度特性を有し、かつ繰り返し使用時の電
位変動の小さい電子写真感光体を提供し、また、この感
光体と短波長レーザーを使用することによって、実用的
で安定して高画質な出力画像が得られる電子写真装置及
びこの装置に着脱可能なプロセスカートリッジを提供す
ることにある。
An object of the present invention is to provide an electrophotographic photosensitive member having high sensitivity characteristics even in a wavelength range of 380 to 500 nm and having a small potential fluctuation upon repeated use. An object of the present invention is to provide an electrophotographic apparatus capable of stably obtaining a high-quality output image by using the same, and a process cartridge detachable from the apparatus.

【0013】[0013]

【課題を解決するための手段】即ち、本発明は、支持体
上に感光層を有する電子写真感光体において、該電子写
真感光体が380〜500nmの波長を有する半導体レ
ーザー光を照射され、かつ該感光層が下記式(1)、
(2)または(3)で示される電荷輸送物質を含有する
ことを特徴とする電子写真感光体である。
That is, the present invention relates to an electrophotographic photosensitive member having a photosensitive layer on a support, wherein the electrophotographic photosensitive member is irradiated with a semiconductor laser beam having a wavelength of 380 to 500 nm; The photosensitive layer has the following formula (1):
An electrophotographic photoreceptor containing the charge transporting material represented by (2) or (3).

【0014】また、本発明は、電子写真感光体、及び帯
電手段、現像手段及びクリーニング手段から選択される
少なくともひとつの手段を一体に支持し、電子写真装置
本体に着脱自在であるプロセスカートリッジにおいて、
該電子写真感光体が支持体上に感光層を有し、380〜
500nmの波長を有するレーザー光を照射され、該感
光層が下記式(1)、(2)または(3)で示される電
荷輸送物質を含有することを特徴とするプロセスカート
リッジである。
According to the present invention, there is provided a process cartridge which integrally supports at least one means selected from an electrophotographic photosensitive member and a charging means, a developing means and a cleaning means and is detachable from an electrophotographic apparatus main body.
The electrophotographic photosensitive member has a photosensitive layer on a support,
A process cartridge which is irradiated with a laser beam having a wavelength of 500 nm, and the photosensitive layer contains a charge transporting material represented by the following formula (1), (2) or (3).

【0015】また、本発明は、電子写真感光体、帯電手
段、露光手段、現像手段及び転写手段を有する電子写真
装置において、該露光手段が露光光源として380〜5
00nmの発振波長を有する半導体レーザーを有し、該
電子写真感光体が支持体上に感光層を有し、該感光層が
下記式(1)、(2)または(3)で示される電荷輸送
物質を含有することを特徴とする電子写真装置である。
According to the present invention, there is provided an electrophotographic apparatus having an electrophotographic photosensitive member, a charging means, an exposing means, a developing means and a transferring means, wherein the exposing means comprises 380-5
A semiconductor laser having an oscillation wavelength of 00 nm, wherein the electrophotographic photosensitive member has a photosensitive layer on a support, and the photosensitive layer is a charge transporting compound represented by the following formula (1), (2) or (3): An electrophotographic apparatus characterized by containing a substance.

【0016】[0016]

【外10】 [Outside 10]

【0017】式中、Ar1-1 及びAr1-2 は置換基を有
してもよい芳香環基を示す。R1-1〜R1-4 は置換基を
有してもよいアルキル基、置換基を有してもよいアラル
キル基、置換基を有してもよいビニル基及び置換基を有
してもよい芳香環基を示す(但し、R1-1 〜R1-4 のう
ち少なくとも2つは置換基を有してもよい芳香環基であ
る)。なお、R1-1 とR1-2 及びR1-3 とR1-4 は直
接、あるいは−CH2 −、−CH2 CH2 −、−CH=
CH−、−O−及び−S−などの有機基を介して環を形
成してもよい。
In the formula, Ar 1-1 and Ar 1-2 each represent an aromatic ring group which may have a substituent. R 1-1 to R 1-4 each have an alkyl group which may have a substituent, an aralkyl group which may have a substituent, a vinyl group which may have a substituent, and a group which has a substituent. A good aromatic ring group is shown (provided that at least two of R 1-1 to R 1-4 are an aromatic ring group which may have a substituent). Incidentally, R 1-1 and R 1-2 and R 1-3 and R 1-4 is directly or -CH 2 -, - CH 2 CH 2 -, - CH =
A ring may be formed via an organic group such as CH-, -O- and -S-.

【0018】[0018]

【外11】 [Outside 11]

【0019】式中、Ar2-1 は置換基を有してもよい芳
香環基を示す。R2-1 〜R2-4 は置換基を有してもよい
アルキル基、置換基を有してもよいアラルキル基、置換
基を有してもよいビニル基及び置換基を有してもよい芳
香環基を示す(但し、R2-1〜R2-4 のうち少なくとも
2つは置換基を有してもよい芳香環基である)。なお、
2-1 とR2-2 及びR2-3 とR2-4 は直接、あるいは−
CH2 −、−CH2 CH2 −、−CH=CH−、−O−
及び−S−などの有機基を介して環を形成してもよい。
In the formula, Ar 2-1 represents an aromatic ring group which may have a substituent. R 2-1 to R 2-4 each have an alkyl group which may have a substituent, an aralkyl group which may have a substituent, a vinyl group which may have a substituent, and It shows a good aromatic ring group (provided that at least two of R 2-1 to R 2-4 are an aromatic ring group which may have a substituent). In addition,
R 2-1 and R 2-2 and R 2-3 and R 2-4 are directly or-
CH 2 —, —CH 2 CH 2 —, —CH = CH—, —O—
And a ring may be formed via an organic group such as -S-.

【0020】[0020]

【外12】 [Outside 12]

【0021】式中、Ar3-1 及びAr3-2 は置換基を有
してもよい芳香環基を示す。R3-1〜R3-4 は置換基を
有してもよいアルキル基、置換基を有してもよいアラル
キル基、置換基を有してもよいビニル基及び置換基を有
してもよい芳香環基を示す(但し、R3-1 〜R3-4 のう
ち少なくとも2つは置換基を有してもよい芳香環基であ
る)。なお、R3-1 とR3-2 及びR3-3 とR3-4 は直
接、あるいは−CH2 −、−CH2 CH2 −、−CH=
CH−、−O−及び−S−などの有機基を介して環を形
成してもよい。また、X3-1 は2価の有機基を示し、好
ましくは−CR12 −(式中、R1 及びR2 は水素、
置換基を有してもよいアルキル基、置換基を有してもよ
いアルコキシ基、置換基を有してもよいアラルキル基、
置換基を有してもよい芳香環基及び置換基を有してもよ
い複素環基を示し、R1 とR2 は環を形成してもよ
い)、−O−、−S−、−CH2 −O−CH2 −、−O
−CH2−O−、−NR3 −(式中、R3 は置換基を有
してもよいアルキル基及び置換基を有してもよい芳香環
基を示す)及び置換基を有してもよいアリーレン基を示
す。
In the formula, Ar 3-1 and Ar 3-2 represent an aromatic ring group which may have a substituent. R 3-1 to R 3-4 each may have an alkyl group which may have a substituent, an aralkyl group which may have a substituent, a vinyl group which may have a substituent, and a substituent. It shows a good aromatic ring group (provided that at least two of R 3-1 to R 3-4 are an aromatic ring group which may have a substituent). Incidentally, R 3-1 and R 3-2 and R 3-3 and R 3-4 is directly or -CH 2 -, - CH 2 CH 2 -, - CH =
A ring may be formed via an organic group such as CH-, -O- and -S-. X 3-1 represents a divalent organic group, preferably -CR 1 R 2- (wherein R 1 and R 2 are hydrogen,
An alkyl group which may have a substituent, an alkoxy group which may have a substituent, an aralkyl group which may have a substituent,
An aromatic ring group which may have a substituent and a heterocyclic group which may have a substituent, wherein R 1 and R 2 may form a ring), -O-, -S-,- CH 2 —O—CH 2 —, —O
—CH 2 —O—, —NR 3 — (wherein R 3 represents an alkyl group which may have a substituent and an aromatic ring group which may have a substituent) and a substituent. Represents a good arylene group.

【0022】式(1)乃至(3)中、R1-1 〜R1-4
2-1 〜R2-4 、R3-1 〜R3-4 及びR1〜R3の芳香環
基としては、フェニル、ナフチル、アントラセニル及び
ピレニルなどの芳香族炭化水素基、ピリジル、キノリ
ル、チエニル、フリル、カルバゾリル、ベンゾイミダゾ
リル及びベンゾチアゾリルなどの芳香族複素環基が挙げ
られる。Ar1-1 、Ar1-2 、Ar2-1 、Ar3-1 及び
Ar3-2 の芳香環基としては、ベンゼン、ナフタレン、
アントラセン及びピレンなどの芳香族炭化水素環及びピ
リジン、キノリン、チオフェン及びフランなどの芳香族
複素環から2個の水素原子を除いた、2価の芳香族炭化
水素基及び芳香族複素環基が挙げられる。アルキル基と
しては、メチル、エチル、プロピル、ブチル及びヘキシ
ルなどの基が挙げられる。アラルキル基としてはベンジ
ル、フェネチル、ナフチルメチル及びフルフリルなどの
基が挙げられる。アルコキシ基としては、メトキシ及び
エトキシなどの基が挙げられる。
In the formulas (1) to (3), R 1-1 to R 1-4 ,
Examples of the aromatic ring group represented by R 2-1 to R 2-4 , R 3-1 to R 3-4 and R 1 to R 3 include aromatic hydrocarbon groups such as phenyl, naphthyl, anthracenyl and pyrenyl, pyridyl and quinolyl. , Thienyl, furyl, carbazolyl, benzimidazolyl and benzothiazolyl. As the aromatic ring group of Ar 1-1 , Ar 1-2 , Ar 2-1 , Ar 3-1 and Ar 3-2 , benzene, naphthalene,
A divalent aromatic hydrocarbon group and an aromatic heterocyclic group in which two hydrogen atoms have been removed from an aromatic hydrocarbon ring such as anthracene and pyrene and an aromatic heterocycle such as pyridine, quinoline, thiophene and furan; Can be Alkyl groups include groups such as methyl, ethyl, propyl, butyl, and hexyl. Aralkyl groups include groups such as benzyl, phenethyl, naphthylmethyl, and furfuryl. Alkoxy groups include groups such as methoxy and ethoxy.

【0023】また、これらの基が有してもよい置換基と
しては、メチル、エチル、プロピル、ブチル及びヘキシ
ルなどのアルキル基、メトキシ、エトキシ及びブトキシ
などのアルコキシ基、フッ素、塩素、臭素及びヨウ素な
どのハロゲン原子、フェニル及びナフチルなどの芳香族
炭化水素基、ピリジル、キノリル、チエニル及びフリル
などの複素環基、アセチル及びベンジルなどのアシル
基、トリフルオロメチルなどのハロアルキル基、シアノ
基、ニトロ基、フェニルカルバモイル基、カルボキシ基
及びヒドロキシ基などが挙げられる。
The substituents which these groups may have include alkyl groups such as methyl, ethyl, propyl, butyl and hexyl, alkoxy groups such as methoxy, ethoxy and butoxy, fluorine, chlorine, bromine and iodine. Such as halogen atoms, aromatic hydrocarbon groups such as phenyl and naphthyl, heterocyclic groups such as pyridyl, quinolyl, thienyl and furyl, acyl groups such as acetyl and benzyl, haloalkyl groups such as trifluoromethyl, cyano groups, and nitro groups Phenylcarbamoyl group, carboxy group and hydroxy group.

【0024】[0024]

【発明の実施の形態】以下に式(1)、式(2)及び式
(3)で示される電荷輸送物質の好ましい例を挙げる。
但し、これらの化合物に限定されるものではない。ま
た、式(2)は構造式を
BEST MODE FOR CARRYING OUT THE INVENTION Preferred examples of the charge transporting substances represented by the formulas (1), (2) and (3) are described below.
However, it is not limited to these compounds. Equation (2) represents the structural formula

【0025】[0025]

【外13】 で示した時のA−Ar2-1 −B、A及びBに相当する部
分のみを記載した。
[Outside 13] Only the portions corresponding to A-Ar 2-1 -B, A and B when indicated by are described.

【0026】[0026]

【外14】 [Outside 14]

【0027】[0027]

【外15】 [Outside 15]

【0028】[0028]

【外16】 [Outside 16]

【0029】[0029]

【外17】 [Outside 17]

【0030】[0030]

【外18】 [Outside 18]

【0031】[0031]

【外19】 [Outside 19]

【0032】[0032]

【外20】 [Outside 20]

【0033】[0033]

【外21】 [Outside 21]

【0034】[0034]

【外22】 [Outside 22]

【0035】[0035]

【外23】 [Outside 23]

【0036】[0036]

【外24】 [Outside 24]

【0037】[0037]

【外25】 [Outside 25]

【0038】[0038]

【外26】 [Outside 26]

【0039】[0039]

【外27】 [Outside 27]

【0040】[0040]

【外28】 [Outside 28]

【0041】[0041]

【外29】 [Outside 29]

【0042】[0042]

【外30】 [Outside 30]

【0043】次に、本発明の電子写真感光体について更
に詳しく説明する。
Next, the electrophotographic photosensitive member of the present invention will be described in more detail.

【0044】感光体の構成は、図1〜図6に示されるよ
うに、支持体上に電荷発生物質と電荷輸送物質の両方を
含有する単一の感光層を設けた単層型、電荷発生物質を
含有する電荷発生層と電荷輸送物質を含有する電荷輸送
層を有する積層型など、のいかなるものであってもよ
い。また、支持体と感光層の間にバリヤー機能や接着機
能を有する下引き層を設けたり(図4及び図6)、感光
層を外部からの機械的及び化学的悪影響から保護するこ
となどを目的として、感光層上に保護層をもうけてもよ
い(図5及び図6)。これらの構成の中では、支持体上
に少なくとも電荷発生層と電荷輸送層が、この順に積層
された構成を有する積層型、例えば図1、図4、図5及
び図6の構成が電子写真特性の点で特に好ましい。な
お、各図中、aは支持体、bは電荷発生層、cは電荷輸
送層、dは単層型の感光層、eは下引き層、fは保護層
を示す。
As shown in FIGS. 1 to 6, the photoreceptor has a single-layer type in which a single photosensitive layer containing both a charge generating substance and a charge transporting substance is provided on a support. Any type such as a stacked type having a charge generation layer containing a substance and a charge transport layer containing a charge transport substance may be used. In addition, an undercoat layer having a barrier function and an adhesive function is provided between the support and the photosensitive layer (FIGS. 4 and 6), and the purpose is to protect the photosensitive layer from external mechanical and chemical adverse effects. Alternatively, a protective layer may be provided on the photosensitive layer (FIGS. 5 and 6). Among these configurations, a laminated type having a configuration in which at least a charge generation layer and a charge transport layer are laminated on a support in this order, for example, the configurations of FIGS. 1, 4, 5, and 6 are electrophotographic characteristics. This is particularly preferred in terms of In each figure, a represents a support, b represents a charge generation layer, c represents a charge transport layer, d represents a single-layer type photosensitive layer, e represents an undercoat layer, and f represents a protective layer.

【0045】以下に、支持体上に電荷発生層と電荷輸送
層を積層した機能分離型感光体について、その作成方法
を述べる。
Hereinafter, a method for preparing a function-separated type photoconductor in which a charge generation layer and a charge transport layer are laminated on a support will be described.

【0046】本発明における支持体は、導電性を有して
いればよく、例えば以下に示した形態のものを挙げるこ
とができる。
The support in the present invention only needs to have conductivity, and examples thereof include the following forms.

【0047】(1)アルミニウム、アルミニウム合金、
ステンレス及び銅などの金属を板形状またはドラム形状
にしたもの。
(1) Aluminum, aluminum alloy,
Plates or drums made of metals such as stainless steel and copper.

【0048】(2)ガラス、樹脂及び紙などの非導電性
支持体や前記(1)の導電性支持体上にアルミニウム、
パラジウム、ロジウム、金及び白金などの金属を蒸着も
しくはラミネートしたもの。
(2) Aluminum, on a non-conductive support such as glass, resin and paper or the conductive support of the above (1).
Metals such as palladium, rhodium, gold and platinum are deposited or laminated.

【0049】(3)ガラス、樹脂及び紙などの非導電性
支持体や前記(1)の導電性支持体上に導電性高分子、
酸化スズ及び酸化インジウムなどの導電性化合物を含有
する層を蒸着あるいは塗布することにより形成したも
の。
(3) A conductive polymer on a non-conductive support such as glass, resin and paper or the conductive support of (1),
A layer formed by depositing or applying a layer containing a conductive compound such as tin oxide and indium oxide.

【0050】本発明に用いられる有効な電荷発生物質と
しては、例えば以下のような物質が挙げられる。これら
の電荷発生物質は単独で用いてもよく、2種類以上組み
合わせてもよい。
Examples of the effective charge generating substance used in the present invention include the following substances. These charge generating substances may be used alone or in combination of two or more.

【0051】(1)モノアゾ、ビスアゾ及びトリスアゾ
などのアゾ系顔料 (2)インジゴ及びチオインジゴなどのインジゴ系顔料 (3)金属フタロシアニン及び非金属フタロシアニンな
どのフタロシアニン系顔料 (4)ペリレン酸無水物及びペリレン酸イミドなどのペ
リレン系顔料 (5)アンスラキノン及びピレンキノンなどの多環キノ
ン系顔料 (6)スクアリリウム色素 (7)ピリリウム塩及びチオピリリウム塩類 (8)トリフェニルメタン系色素 (9)セレン及び非晶質シリコンなどの無機物質
(1) Azo pigments such as monoazo, bisazo and trisazo (2) Indigo pigments such as indigo and thioindigo (3) Phthalocyanine pigments such as metal phthalocyanine and nonmetal phthalocyanine (4) Perylene anhydride and perylene Perylene pigments such as acid imide (5) Polycyclic quinone pigments such as anthraquinone and pyrenequinone (6) Squarylium dyes (7) Pyrylium salts and thiopyrylium salts (8) Triphenylmethane dyes (9) Selenium and amorphous Inorganic substances such as silicon

【0052】電荷発生物質を含有する層、即ち電荷発生
層は上記のような電荷発生物質を適当な結着剤に分散
し、これを導電性支持体上に塗工することにより形成す
ることができる。また、導電性支持体上に蒸着、スパッ
タ及びCVDなどの乾式法で形成することができる。
The layer containing the charge generating substance, that is, the charge generating layer, can be formed by dispersing the above-described charge generating substance in a suitable binder and applying the resultant to a conductive support. it can. Further, it can be formed on a conductive support by a dry method such as evaporation, sputtering, and CVD.

【0053】上記結着剤としては広範囲な結着性樹脂か
ら選択でき、例えば、ポリカーボネート樹脂、ポリエス
テル樹脂、ポリアリレート樹脂、ブチラール樹脂、ポリ
スチレン樹脂、ポリビニルアセタール樹脂、ジアリルフ
タレート樹脂、アクリル樹脂、メタクリル樹脂、酢酸ビ
ニル樹脂、フェノール樹脂、シリコン樹脂、ポリスルホ
ン樹脂、スチレン−ブタジエン共重合体樹脂、アルキッ
ド樹脂、エポキシ樹脂、尿素樹脂及び塩化ビニル−酢酸
ビニル共重合体樹脂などが挙げられるが、これらに限定
されるものではない。これらは単独または共重合体ポリ
マーとして1種または2種以上混合して用いてもよい。
The binder can be selected from a wide range of binder resins, for example, polycarbonate resin, polyester resin, polyarylate resin, butyral resin, polystyrene resin, polyvinyl acetal resin, diallyl phthalate resin, acrylic resin, methacrylic resin. , Vinyl acetate resin, phenolic resin, silicone resin, polysulfone resin, styrene-butadiene copolymer resin, alkyd resin, epoxy resin, urea resin and vinyl chloride-vinyl acetate copolymer resin, but are not limited thereto. Not something. These may be used alone or in combination of two or more as a copolymer.

【0054】電荷発生層中に含有する樹脂は、80重量
%以下、特には40重量%以下であることが好ましい。
また、電荷発生層の膜厚は5μm以下、特には0.01
〜2μmとすることが好ましい。また、電荷発生層には
種々の増感剤を添加してもよい。
The resin contained in the charge generation layer is preferably at most 80% by weight, particularly preferably at most 40% by weight.
The charge generation layer has a thickness of 5 μm or less, particularly 0.01 μm.
It is preferable to set the thickness to 2 μm. Various sensitizers may be added to the charge generation layer.

【0055】電荷輸送物質を含有する層、即ち電荷輸送
層は、少なくとも前記式(1)、式(2)または式
(3)で示される電荷輸送物質と、適当な結着剤とを組
み合わせて形成することができる。電荷輸送層に用いら
れる結着剤としては、前記電荷発生層に用いられている
ものが挙げられ、更にポリビニルカルバゾール及びポリ
ビニルアントラセンなどの光導電性高分子も挙げられ
る。
The layer containing the charge transporting material, ie, the charge transporting layer, is formed by combining at least the charge transporting material represented by the above formula (1), (2) or (3) with a suitable binder. Can be formed. Examples of the binder used in the charge transport layer include those used in the charge generation layer, and further include photoconductive polymers such as polyvinyl carbazole and polyvinyl anthracene.

【0056】電荷輸送物質には電子輸送性物質と正孔輸
送性物質があり、電子輸送性物質としては、例えば、
2,4,7−トリニトロフルオレノン、2,4,5,7
−テトラニトロフルオレノン、クロラニル及びテトラシ
アノキノジメタンなどの電子吸引性物質やこれら電子吸
引性材料を高分子化したものなどが挙げられる。
The charge transporting substance includes an electron transporting substance and a hole transporting substance. Examples of the electron transporting substance include:
2,4,7-trinitrofluorenone, 2,4,5,7
-Electron-withdrawing substances such as tetranitrofluorenone, chloranil, and tetracyanoquinodimethane, and those obtained by polymerizing these electron-withdrawing materials.

【0057】正孔輸送性物質としては、前記式(1)、
式(2)及び式(3)で示されるアミン化合物の他に、
例えば、ピレン及びアントラセンなどの多環芳香族化合
物、カルバゾール系、インドール系、オキサゾール系、
チアゾール系、オキサジアゾール系、ピラゾール系、ピ
ラゾリン系、チアジアゾール系、トリアゾール系化合物
などの複素環化合物、ヒドラゾン系化合物、トリアリー
ルメタン系化合物、スチルベン系化合物、あるいは、こ
れらの化合物からなる基を主鎖または側鎖に有するポリ
マー(例えば、ポリ−N−ビニルカルバゾール及びポリ
ビニルアントラセンなど)が挙げられる。
As the hole transporting substance, the above formula (1)
In addition to the amine compounds represented by the formulas (2) and (3),
For example, polycyclic aromatic compounds such as pyrene and anthracene, carbazole, indole, oxazole,
Heterocyclic compounds such as thiazole, oxadiazole, pyrazole, pyrazoline, thiadiazole, and triazole compounds, hydrazone compounds, triarylmethane compounds, stilbene compounds, and groups composed of these compounds are mainly used. Polymers having a chain or a side chain (for example, poly-N-vinyl carbazole and polyvinyl anthracene) are included.

【0058】本発明においては、前記式(1)、式
(2)及び式(3)で示されるアミン化合物を単独で用
いても2種類以上組み合わせて用いてもよく、また、本
発明の顕著な効果が得られる範囲内で先に挙げた他の構
造の電荷輸送物質と組み合わせて用いてもよい。
In the present invention, the amine compounds represented by formulas (1), (2) and (3) may be used alone or in combination of two or more. It may be used in combination with a charge transporting material having another structure as described above as long as the above effects can be obtained.

【0059】結着剤と電荷輸送物質との配合割合は、結
着剤100重量部あたり電荷輸送物質を10〜500重
量部とすることが好ましい。電荷輸送層は、上述の電荷
発生層と電気的に接続されており、電界の存在下で電荷
発生層から注入された電荷キャリアを受け取るととも
に、これらの電荷キャリアを表面まで輸送できる機能を
有している。この電荷輸送層は電荷キャリアを輸送でき
る限界があるので、必要以上に膜厚を厚くすることがで
きないが、5μm〜40μm、特には10μm〜30μ
mの範囲が好ましい。
The mixing ratio of the binder and the charge transporting substance is preferably 10 to 500 parts by weight of the charge transporting substance per 100 parts by weight of the binder. The charge transport layer is electrically connected to the above-described charge generation layer, and has a function of receiving charge carriers injected from the charge generation layer in the presence of an electric field and transporting these charge carriers to the surface. ing. Since the charge transport layer has a limit for transporting charge carriers, the film thickness cannot be increased more than necessary, but the thickness is 5 μm to 40 μm, particularly 10 μm to 30 μm.
The range of m is preferred.

【0060】更に、電荷輸送層中に酸化防止剤、紫外線
吸収剤及び可塑剤などを必要に応じて添加することもで
きる。
Further, an antioxidant, an ultraviolet absorber, a plasticizer and the like can be added to the charge transporting layer as required.

【0061】下引き層はカゼイン、ポリビニルアルコー
ル、ニトロセルロース、ポリアミド(ナイロン6、ナイ
ロン66、ナイロン610、共重合ナイロン及びN−ア
ルコキシメチル化ナイロンなど)、ポリウレタン及び酸
化アルミニウムなどによって形成することができる。膜
厚は0.1〜10μmであることが好ましく、特には
0.5〜5μmであることが好ましい。
The undercoat layer can be formed of casein, polyvinyl alcohol, nitrocellulose, polyamide (nylon 6, nylon 66, nylon 610, copolymerized nylon and N-alkoxymethylated nylon, etc.), polyurethane, aluminum oxide and the like. . The film thickness is preferably from 0.1 to 10 μm, particularly preferably from 0.5 to 5 μm.

【0062】保護層は樹脂層や導電性粒子などを含有す
る樹脂層である。
The protective layer is a resin layer or a resin layer containing conductive particles and the like.

【0063】これら各種の層は、適当な有機溶媒を用
い、浸漬コーティング法、スプレーコーティング法、ス
ピンナーコーティング法、ローラーコーティング法、マ
イヤーバーコーティング法及びブレードコーティング法
などのコーティング法により形成することができる。
These various layers can be formed using a suitable organic solvent by a coating method such as a dip coating method, a spray coating method, a spinner coating method, a roller coating method, a Meyer bar coating method and a blade coating method. .

【0064】本発明における露光手段は、露光光源とし
て380〜500nmの発振波長を有する半導体レーザ
ーを有していればよく、他の構成は特に限定されるもの
ではない。また、半導体レーザーも発振波長が上記の範
囲内であれば、他の構成は特に限定されるものではな
い。なお、本発明においては、半導体レーザーの発振波
長が400〜450nmであることが、電荷輸送物質の
選択範囲の広さ、及びコスト及び電子写真特性の点で好
ましい。
The exposure means in the present invention only needs to have a semiconductor laser having an oscillation wavelength of 380 to 500 nm as an exposure light source, and other configurations are not particularly limited. Other configurations of the semiconductor laser are not particularly limited as long as the oscillation wavelength is within the above range. In the present invention, it is preferable that the oscillation wavelength of the semiconductor laser is 400 to 450 nm in view of the wide selection range of the charge transport material, cost, and electrophotographic characteristics.

【0065】また、本発明における帯電手段、現像手
段、転写手段及びクリーニング手段も特に限定されるも
のではない。
The charging means, developing means, transfer means and cleaning means in the present invention are not particularly limited.

【0066】図7に本発明の電子写真感光体を有するプ
ロセスカートリッジを有する電子写真装置の概略構成を
示す。
FIG. 7 shows a schematic configuration of an electrophotographic apparatus having a process cartridge having the electrophotographic photosensitive member of the present invention.

【0067】図において、1はドラム状の本発明の電子
写真感光体であり、軸2を中心に矢印方向に所定の周速
度で回転駆動される。感光体1は、回転過程において、
一次帯電手段3によりその周面に正または負の所定電位
の均一帯電を受け、次いで、レーザービーム走査露光な
どの露光手段(不図示)からの露光光4を受ける。こう
して感光体1の周面に静電潜像が順次形成されていく。
In FIG. 1, reference numeral 1 denotes a drum-shaped electrophotographic photosensitive member of the present invention, which is driven to rotate around an axis 2 in a direction of an arrow at a predetermined peripheral speed. The photoreceptor 1 rotates during the rotation process.
The peripheral surface is uniformly charged with a predetermined positive or negative potential by the primary charging means 3 and then receives exposure light 4 from exposure means (not shown) such as laser beam scanning exposure. Thus, an electrostatic latent image is sequentially formed on the peripheral surface of the photoconductor 1.

【0068】形成された静電潜像は、次いで現像手段5
によりトナー現像され、現像されたトナー現像像は、不
図示の給紙部から感光体1と転写手段6との間に感光体
1の回転と同期取りされて給送された転写材7に、転写
手段6により順次転写されていく。
The formed electrostatic latent image is then transferred to developing means 5
The toner-developed image developed by the above-described process is transferred to a transfer material 7 fed from a paper supply unit (not shown) between the photoconductor 1 and the transfer unit 6 in synchronization with the rotation of the photoconductor 1. The image is sequentially transferred by the transfer unit 6.

【0069】像転写を受けた転写材7は、感光体面から
分離されて像定着手段8へ導入されて像定着を受けるこ
とにより複写物(コピー)として装置外へプリントアウ
トされる。
The transfer material 7 which has undergone the image transfer is separated from the photoreceptor surface, introduced into the image fixing means 8 and subjected to image fixing to be printed out as a copy out of the apparatus.

【0070】像転写後の感光体1の表面は、クリーニン
グ手段9によって転写残りトナーの除去を受けて清浄面
化され、更に前露光手段(不図示)からの前露光光10
により除電処理された後、繰り返し画像形成に使用され
る。なお、図においては、一次帯電手段3が帯電ローラ
ーを用いた接触帯電手段であるので、前露光は必ずしも
必要ではない。
After the transfer of the image, the surface of the photoreceptor 1 is cleaned by removing the untransferred toner by the cleaning means 9, and the pre-exposure light 10 from the pre-exposure means (not shown).
Is used for image formation repeatedly after the charge removal processing. In the figure, since the primary charging means 3 is a contact charging means using a charging roller, pre-exposure is not necessarily required.

【0071】本発明においては、上述の電子写真感光体
1、一次帯電手段3、現像手段5及びクリーニング手段
9などの構成要素のうち、複数のものをプロセスカート
リッジとして一体に結合して構成し、このプロセスカー
トリッジを複写機やレーザービームプリンターなどの電
子写真装置本体に対して着脱可能に構成してもよい。例
えば、一次帯電手段3、現像手段5及びクリーニング手
段9の少なくとも1つを感光体1と共に一体に支持して
カートリッジ化し、装置本体のレール12などの案内手
段を用いて装置本体に着脱可能なプロセスカートリッジ
11とすることができる。
In the present invention, a plurality of components such as the above-described electrophotographic photosensitive member 1, primary charging means 3, developing means 5 and cleaning means 9 are integrally connected as a process cartridge. The process cartridge may be configured to be detachable from a main body of an electrophotographic apparatus such as a copying machine or a laser beam printer. For example, a process in which at least one of the primary charging unit 3, the developing unit 5, and the cleaning unit 9 is integrally supported together with the photoreceptor 1 to form a cartridge, and can be attached to and detached from the apparatus main body by using a guide unit such as the rail 12 of the apparatus main body. The cartridge 11 can be used.

【0072】[0072]

【実施例】以下、本発明を実施例によって具体的に説明
するが、本発明は、その要旨を超えない限り、以下の実
施例によって限定されるものではない。なお、以下の実
施例中「部」は「重量部」を示す。
EXAMPLES Hereinafter, the present invention will be described specifically with reference to examples, but the present invention is not limited to the following examples unless it exceeds the gist. In the following examples, “parts” indicates “parts by weight”.

【0073】(実施例1)アルミニウム支持体上に、N
−メトキシメチル化6ナイロン樹脂(重量平均分子量3
0,000)5.5部とアルコール可溶性共重合ナイロ
ン樹脂(重量平均分子量28,000)8部をメタノー
ル30部/ブタノール89部の混合溶液に溶解した液を
マイヤーバーで塗布し、乾燥することによって、膜厚が
約1μmの下引き層を設けた。
(Example 1) N on an aluminum support
-Methoxymethylated 6 nylon resin (weight average molecular weight 3
A solution prepared by dissolving 5.5 parts of (0000) and 8 parts of an alcohol-soluble copolymerized nylon resin (weight average molecular weight of 28,000) in a mixed solution of 30 parts of methanol / 89 parts of butanol is applied by a Meyer bar and dried. Thus, an undercoat layer having a thickness of about 1 μm was provided.

【0074】次に、下記構造式で示されるアゾ化合物2
0部とブチラール樹脂(ブチラール化度65mol%、
重量平均分子量30,000)10部をテトラヒドロフ
ラン400部に添加し、φ1mmのガラスビーズを用い
たサンドミル装置で20時間分散した。この分散液を先
に作成した下引き層の上にマイヤーバーで塗布し、乾燥
することによって、膜厚が約0.25μmの電荷発生層
を形成した。
Next, an azo compound 2 represented by the following structural formula
0 parts and butyral resin (butyralization degree 65 mol%,
10 parts by weight (weight average molecular weight 30,000) was added to 400 parts of tetrahydrofuran, and dispersed by a sand mill using glass beads having a diameter of 1 mm for 20 hours. This dispersion was applied to the undercoat layer prepared above using a Meyer bar and dried to form a charge generation layer having a thickness of about 0.25 μm.

【0075】[0075]

【外31】 [Outside 31]

【0076】次に、例示化合物1−8を7部、ビスフェ
ノールZ型ポリカーボネート(重量平均分子量45,0
00)10部をモノクロルベンゼン65部に溶解した電
荷輸送層溶液を調製し、この溶液を電荷発生層上にマイ
ヤーバーで塗布し、100℃で1時間乾燥することによ
って、膜厚が22μmの電荷輸送層を形成し、電子写真
感光体を作成した。
Next, 7 parts of the exemplified compound 1-8 was added to a bisphenol Z-type polycarbonate (weight average molecular weight: 45.0
00) A charge transport layer solution was prepared by dissolving 10 parts in 65 parts of monochlorobenzene, this solution was applied on the charge generation layer by a Meyer bar, and dried at 100 ° C. for 1 hour to form a charge having a thickness of 22 μm. A transport layer was formed, and an electrophotographic photoreceptor was prepared.

【0077】以上のようにして作成した感光体の電子写
真特性を、静電複写紙試験装置(川口電機製:EPA−
8100)を用いて以下のように測定した。
The electrophotographic characteristics of the photoreceptor prepared as described above were measured using an electrostatic copying paper tester (made by Kawaguchi Electric: EPA-
8100) as follows.

【0078】(初期特性)感光体の表面電位を−700
Vになるようにコロナ帯電器で帯電し、次いでモノクロ
メータで分離した450nmの単色光で露光し、表面電
位が−350Vまで減衰するのに必要な光量を測定し、
半減露光感度(E1/2 )を求めた。また、露光30秒後
の残留表面電位(Vr)を測定した。
(Initial Characteristics) The surface potential of the photosensitive member was set to -700.
V was charged with a corona charger, and then exposed to 450 nm monochromatic light separated by a monochromator, and the amount of light required for the surface potential to attenuate to -350 V was measured.
The half-life exposure sensitivity (E1 / 2 ) was determined. Further, the residual surface potential (Vr) 30 seconds after the exposure was measured.

【0079】(繰り返し特性及び環境特性)常温常湿下
(温度23℃、湿度55%RH)で初期暗部電位(V
d)及び初期明部電位(Vl)をそれぞれ−700V、
−200V付近に設定し、450nmの単色光を用いて
帯電及び露光を5000回繰り返し、Vd及びVlの変
動量(ΔVd、ΔVl)を測定した。その後、環境を高
温高湿(温度33℃、湿度85%RH)に変え、Vlの
常温常湿下からの変動量を測定した。電位変動における
負符号は電位の絶対値の低下を表し、正符号は電位の絶
対値の増加を表す。
(Repeatability and environmental characteristics) Initial dark portion potential (V) under normal temperature and normal humidity (temperature 23 ° C., humidity 55% RH)
d) and the initial light portion potential (Vl) are -700 V, respectively.
Charging and exposure were repeated 5,000 times using a monochromatic light of 450 nm set at around -200 V, and the fluctuation amounts (ΔVd, ΔVl) of Vd and Vl were measured. Thereafter, the environment was changed to high temperature and high humidity (temperature of 33 ° C., humidity of 85% RH), and the fluctuation amount of Vl from under normal temperature and normal humidity was measured. A negative sign in the potential fluctuation indicates a decrease in the absolute value of the potential, and a positive sign indicates an increase in the absolute value of the potential.

【0080】(光メモリー)感光体の初期Vd、450
nmの単色光での初期Vlをそれぞれ−700V、−2
00V付近に設定した。次に、感光体の一部に光強度2
0μW/cm2 の450nmの単色光を20分間照射し
た後、再度感光体のVd、Vlを測定し、光メモリーと
して非照射部と照射部のVdの差(ΔVd)及び非照射
部と照射部のVlの差(ΔVl)を測定した。電位差に
おける負符号は照射部電位が非照射部より絶対値が低い
ことを表し、正符号はその逆を表す。
(Optical Memory) Initial Vd of Photoconductor, 450
The initial Vl for monochromatic light of nm is -700 V and -2, respectively.
It was set near 00V. Next, a light intensity 2 is applied to a part of the photoconductor.
After irradiation with 0 μW / cm 2 of 450 nm monochromatic light for 20 minutes, Vd and Vl of the photoreceptor were measured again. Was measured (ΔVl). A negative sign in the potential difference indicates that the irradiated part potential has a lower absolute value than the non-irradiated part, and a positive sign indicates the opposite.

【0081】結果を表1に示す。Table 1 shows the results.

【0082】(実施例2〜5)例示化合物1−8の代わ
りに表1に示した化合物を用いた他は、実施例1と同様
にして電子写真感光体を作成し、評価した。結果を表1
に示す。
Examples 2 to 5 Electrophotographic photosensitive members were prepared and evaluated in the same manner as in Example 1 except that the compounds shown in Table 1 were used instead of the exemplified compounds 1-8. Table 1 shows the results
Shown in

【0083】(比較例1)例示化合物1−8の代わりに
下記構造式で示される比較化合物1を用いた以外は、実
施例1と同様にして電子写真感光体を作成し、評価し
た。結果を表1に示す。
Comparative Example 1 An electrophotographic photosensitive member was prepared and evaluated in the same manner as in Example 1 except that Comparative Compound 1 represented by the following structural formula was used instead of Exemplified Compound 1-8. Table 1 shows the results.

【0084】[0084]

【外32】 [Outside 32]

【0085】(比較例2)例示化合物1−8の代わりに
下記構造式で示される比較化合物2を用いた以外は、実
施例1と同様にして電子写真感光体を作成し、評価し
た。結果を表1に示す。
Comparative Example 2 An electrophotographic photosensitive member was prepared and evaluated in the same manner as in Example 1 except that Comparative Compound 2 represented by the following structural formula was used instead of Exemplified Compound 1-8. Table 1 shows the results.

【0086】[0086]

【外33】 [Outside 33]

【0087】[0087]

【表1】 [Table 1]

【0088】(実施例6〜9)例示化合物1−8を表2
に示した化合物に代えた以外は、実施例1と同様にして
電子写真感光体を作成し、評価した。結果を表2に示
す。
Examples 6-9 Exemplified compounds 1-8 were prepared as shown in Table 2.
An electrophotographic photoreceptor was prepared and evaluated in the same manner as in Example 1, except that the compound shown in Table 1 was used. Table 2 shows the results.

【0089】[0089]

【表2】 [Table 2]

【0090】(実施例10〜13)例示化合物として表
3に示した化合物を用いた以外は、実施例1と同様にし
て電子写真感光体を作成し、評価した。結果を表3に示
す。
Examples 10 to 13 An electrophotographic photosensitive member was prepared and evaluated in the same manner as in Example 1 except that the compounds shown in Table 3 were used as exemplary compounds. Table 3 shows the results.

【0091】[0091]

【表3】 [Table 3]

【0092】(実施例14〜16及び比較例3)アゾ化
合物を下記構造式で示される化合物に代え、電荷輸送物
質を表4に示した化合物に代えた以外は、実施例1と同
様にして電子写真感光体を作成し、評価した。結果を表
4に示す。
Examples 14 to 16 and Comparative Example 3 In the same manner as in Example 1 except that the azo compound was changed to a compound represented by the following structural formula, and the charge transporting material was changed to a compound shown in Table 4. An electrophotographic photosensitive member was prepared and evaluated. Table 4 shows the results.

【0093】[0093]

【外34】 [Outside 34]

【0094】[0094]

【表4】 [Table 4]

【0095】(実施例17〜19)例示化合物を表5に
示した化合物に代えた以外は、実施例14と同様にして
電子写真感光体を作成し、評価した。結果を表5に示
す。
Examples 17 to 19 Electrophotographic photosensitive members were prepared and evaluated in the same manner as in Example 14 except that the exemplified compounds were changed to the compounds shown in Table 5. Table 5 shows the results.

【0096】[0096]

【表5】 [Table 5]

【0097】(実施例20〜22)例示化合物を表6に
示した化合物に代えた以外は、実施例14と同様にして
電子写真感光体を作成し、評価した。結果を表6に示
す。
Examples 20 to 22 Electrophotographic photosensitive members were prepared and evaluated in the same manner as in Example 14, except that the exemplified compounds were changed to the compounds shown in Table 6. Table 6 shows the results.

【0098】[0098]

【表6】 [Table 6]

【0099】これらの結果から、式(1)乃至(3)で
示される化合物を用いた電子写真感光体は、比較例の感
光体に比べて、短波長露光光源を有する電子写真装置に
組み込んだ場合に、より優れた感度を発現し、繰り返し
使用時の電位や感度の安定性により優れ、環境依存性が
より小さく、短波長光に対する光メモリーがより小さい
ことがわかる。
From these results, the electrophotographic photosensitive member using the compounds represented by the formulas (1) to (3) was incorporated in an electrophotographic apparatus having a short-wavelength exposure light source, as compared with the photosensitive member of the comparative example. In this case, it can be seen that a higher sensitivity is exhibited, the potential and the stability of the sensitivity during repeated use are more excellent, the environment dependency is smaller, and the optical memory for short wavelength light is smaller.

【0100】(実施例23〜31及び比較例4)実施例
14〜22及び比較例3で作成した感光体の電荷発生層
と電荷輸送層の上下関係を逆にした感光体を作成し、実
施例1と同様にして初期の感度を測定した。但し、帯電
極性はプラスとした。結果を表7に示す。
(Examples 23 to 31 and Comparative Example 4) A photosensitive member was prepared by reversing the vertical relationship between the charge generation layer and the charge transport layer of the photosensitive members prepared in Examples 14 to 22 and Comparative Example 3. The initial sensitivity was measured in the same manner as in Example 1. However, the charging polarity was positive. Table 7 shows the results.

【0101】[0101]

【表7】 [Table 7]

【0102】これらの結果から、本発明の電子写真感光
体は、電荷輸送層と電荷発生層がこの順に積層されたい
わゆる逆層構成においても、短波長レーザー用感光体と
して実用的な感度が得られることがわかる。
From these results, the electrophotographic photoreceptor of the present invention can obtain practical sensitivity as a photoreceptor for short wavelength laser even in a so-called reverse layer configuration in which a charge transport layer and a charge generation layer are laminated in this order. It is understood that it can be done.

【0103】(実施例32〜34及び比較例5)10%
酸化アンチモンを含有する酸化スズで被覆した酸化チタ
ン粉体50部、レゾール型フェノール樹脂25部、メチ
ルセロソルブ20部、メタノール5部及びシリコーンオ
イル(ポリジメチルシロキサンポリオキシアルキレン共
重合体、平均分子量3,000)0.002部を1mm
φガラスビーズを用いたサンドミル装置で2時間分散し
て導電層用塗料を調製した。この塗料をアルミニウムシ
リンダー(30mmφ×261mm)上に浸漬塗布し、
140℃で30分乾燥することによって、膜厚が20μ
mの導電層を形成した。
(Examples 32-34 and Comparative Example 5) 10%
50 parts of titanium oxide powder coated with tin oxide containing antimony oxide, 25 parts of resole type phenol resin, 20 parts of methyl cellosolve, 5 parts of methanol and silicone oil (polydimethylsiloxane polyoxyalkylene copolymer, average molecular weight 3, 000) 0.002 parts to 1 mm
The dispersion was dispersed for 2 hours with a sand mill using φ glass beads to prepare a coating for the conductive layer. This paint is dip-coated on an aluminum cylinder (30 mmφ × 261 mm),
By drying at 140 ° C. for 30 minutes, the film thickness becomes 20 μm.
m conductive layers were formed.

【0104】この導電層の上に、N−メトキシメチル化
6ナイロン樹脂(重量平均分子量52,000)5部と
アルコール可溶性共重合ナイロン樹脂(重量平均分子量
48,000)10部をメタノール95部に溶解した液
を浸漬塗布し、乾燥することによって、膜厚が0.8μ
mの下引き層を形成した。
On this conductive layer, 5 parts of N-methoxymethylated nylon 6 resin (weight average molecular weight 52,000) and 10 parts of alcohol-soluble copolymerized nylon resin (weight average molecular weight 48,000) were added to 95 parts of methanol. By dip coating the dissolved liquid and drying, the film thickness becomes 0.8μ
m was formed.

【0105】実施例1で用いたアゾ化合物20部を、ポ
リビニルブチラール(商品名エスレックBM−S、積水
化学(株)製)10部をシクロヘキサノン200部に溶
解した液に添加し、1mmφのガラスビーズを用いたサ
ンドミル装置で20時間分散し、更に200部の酢酸エ
チルを加えて希釈した。この液を下引き層上に浸漬塗布
し、95℃で10分間乾燥することによって、膜厚が
0.4μmの電荷発生層を形成した。
20 parts of the azo compound used in Example 1 was added to a solution prepared by dissolving 10 parts of polyvinyl butyral (trade name: SREC BM-S, manufactured by Sekisui Chemical Co., Ltd.) in 200 parts of cyclohexanone. The mixture was dispersed for 20 hours in a sand mill using, and further diluted by adding 200 parts of ethyl acetate. This solution was dip-coated on the undercoat layer and dried at 95 ° C. for 10 minutes to form a charge generation layer having a thickness of 0.4 μm.

【0106】次に、表8に示した例示化合物9部及びビ
スフェノールZ型ポリカーボネート(重量平均分子量4
5,000)10部をモノクロロベンゼン65部に溶解
した。この液を電荷発生層上に浸漬塗布し、100℃で
1時間乾燥することによって、膜厚が22μmの電荷輸
送層を形成した。
Next, 9 parts of the exemplified compounds shown in Table 8 and bisphenol Z-type polycarbonate (weight average molecular weight 4
(5,000) was dissolved in 65 parts of monochlorobenzene. This liquid was applied onto the charge generation layer by dip coating, and dried at 100 ° C. for 1 hour to form a charge transport layer having a thickness of 22 μm.

【0107】このようにして作成した電子写真感光体
を、パルス変調装置を搭載しているキヤノン製プリンタ
ーLBP−2000改造機(光源として日立金属(株)
製全固体青色SHGレーザーICD−430/発振波長
430nmを搭載。また、反転現像系で600dpi相
当の画像入力に対応できる帯電−露光−現像−転写−ク
リーニングからなるカールソン方式の電子写真システム
に改造。)に装着し、以下の画像評価を行った。
The electrophotographic photoreceptor thus prepared was converted to a Canon printer LBP-2000 remodeling machine equipped with a pulse modulator (Hitachi Metals, Ltd. as a light source).
Equipped with all solid blue SHG laser ICD-430 / oscillation wavelength 430nm. In addition, the reversal development system was modified to a Carlson-type electrophotographic system consisting of charging-exposure-development-transfer-cleaning, which can support image input equivalent to 600 dpi. ), And the following image evaluation was performed.

【0108】(ドット及び文字の再現性の評価)暗部電
位Vd=−650V、明部電位Vl=−200Vに設定
し、1ドット1スペースの画像と文字(5ポイント)画
像の出力を行い、得られた画像を目視により評価した。
表8中、◎は優、○は良、△は可、×は劣を示す。
(Evaluation of Reproducibility of Dots and Characters) The dark portion potential Vd = -650 V and the bright portion potential Vl = -200 V were set, and one dot / one space image and a character (5 point) image were output. The obtained image was visually evaluated.
In Table 8, ◎ indicates excellent, は indicates good, Δ indicates acceptable, and × indicates inferior.

【0109】(ゴーストの評価)常温常湿下(23℃、
湿度55%RH)で、初期で、ドラム一周分適当な文字
パターンを印字し、その後画像サンプルを出力し、ゴー
スト現象が出ているかどうかを目視により確認した。次
に、耐久パターンを5000枚連続プリントし耐久後に
画像サンプルを出力し、耐久後のゴースト現象が出てい
るかどうかを確認した。耐久パターンは約2mm幅の線
を縦横7mmおきに印字したものである。画像サンプル
は全面黒と、1ドット1スペースのドット密度の画像を
用い、機械の現像ヴォリューム、F5(中心値)とF9
(濃度薄い)で各々サンプリングした。評価基準は、ゴ
ーストが見えないものをランク5とし、1ドット1スペ
ースF9で見えるものをランク4、1ドット1スペース
F5で見えるものをランク3、全面黒F9で見えるもの
をランク2、全面黒F5で見えるものをランク1とし
た。
(Evaluation of Ghost) Under normal temperature and normal humidity (23 ° C.,
Initially, an appropriate character pattern was printed for one rotation of the drum at a humidity of 55% RH), and then an image sample was output to visually check whether or not a ghost phenomenon had occurred. Next, continuous printing of 5,000 sheets of a durable pattern was performed, an image sample was output after the endurance, and it was confirmed whether or not a ghost phenomenon occurred after the endurance. The durable pattern is a line having a width of about 2 mm printed every 7 mm in length and width. The image sample used was an image of black on the entire surface and a dot density of one dot per space, and the development volumes of the machine, F5 (center value) and F9
(Low concentration). The evaluation criteria are as follows: a ghost is not visible, rank 5; a sight that can be seen in one dot and one space F9 is rank 4, a sight that is seen in one dot and one space F5 is a rank 3, and a ghost that is entirely visible in F9 is rank 2. What was visible in F5 was designated as rank 1.

【0110】結果を表8に示す。Table 8 shows the results.

【0111】(比較例6)アゾ化合物を下記構造式で示
される化合物に代えた以外は、実施例32と同様にして
電子写真感光体を作成した。
Comparative Example 6 An electrophotographic photosensitive member was prepared in the same manner as in Example 32 except that the azo compound was replaced with a compound represented by the following structural formula.

【0112】[0112]

【外35】 [Outside 35]

【0113】(比較例7)例示化合物を前記比較化合物
1に代えた以外は、比較例6と同様にして電子写真感光
体を作成した。
(Comparative Example 7) An electrophotographic photosensitive member was prepared in the same manner as in Comparative Example 6, except that the exemplified compound was replaced with Comparative Compound 1.

【0114】比較例6及び比較例7で作成した感光体に
ついて、プリンターの光源を発振波長が780nmのG
aAs系半導体レーザーに代えた以外は、実施例32と
同様にして評価を行った。結果を表8に示す。
With respect to the photosensitive members prepared in Comparative Examples 6 and 7, the light source of the printer was changed to a G light having an oscillation wavelength of 780 nm.
Evaluation was performed in the same manner as in Example 32 except that the aAs-based semiconductor laser was used instead. Table 8 shows the results.

【0115】[0115]

【表8】 [Table 8]

【0116】(実施例35〜46)例示化合物を表9に
示される例示化合物に代えた以外は、実施例32と同様
にして電子写真感光体を作成し、評価した。結果を表9
に示す。
Examples 35 to 46 An electrophotographic photosensitive member was prepared and evaluated in the same manner as in Example 32 except that the exemplified compounds were changed to the exemplified compounds shown in Table 9. Table 9 shows the results.
Shown in

【0117】(比較例8)アゾ化合物を比較例6で用い
た化合物に代えた以外は、実施例35と同様にして電子
写真感光体を作成した。
Comparative Example 8 An electrophotographic photosensitive member was prepared in the same manner as in Example 35 except that the azo compound was changed to the compound used in Comparative Example 6.

【0118】作成した感光体について、プリンターの光
源を発振波長が780nmのGaAs系半導体レーザー
に代えた以外は、実施例35と同様にして評価を行っ
た。結果を表9に示す。
The prepared photoreceptor was evaluated in the same manner as in Example 35 except that the light source of the printer was changed to a GaAs semiconductor laser having an oscillation wavelength of 780 nm. Table 9 shows the results.

【0119】[0119]

【表9】 [Table 9]

【0120】(実施例38〜40)例示化合物を表10
に示される例示化合物に代えた以外は、実施例32と同
様にして電子写真感光体を作成し、評価した。結果を表
10に示す。
(Examples 38 to 40)
An electrophotographic photoreceptor was prepared and evaluated in the same manner as in Example 32 except that the exemplified compounds shown in the above were replaced. Table 10 shows the results.

【0121】(比較例9)アゾ化合物を比較例6で用い
た化合物に代えた以外は、実施例38と同様にして電子
写真感光体を作成した。
Comparative Example 9 An electrophotographic photosensitive member was prepared in the same manner as in Example 38 except that the azo compound was replaced with the compound used in Comparative Example 6.

【0122】作成した感光体について、プリンターの光
源を発振波長が780nmのGaAs系半導体レーザー
に代えた以外は、実施例38と同様にして評価を行っ
た。結果を表10に示す。
The prepared photoreceptor was evaluated in the same manner as in Example 38 except that the light source of the printer was changed to a GaAs semiconductor laser having an oscillation wavelength of 780 nm. Table 10 shows the results.

【0123】[0123]

【表10】 [Table 10]

【0124】これらの結果から、本発明の電子写真装置
は、ドットの再現性や文字の再現性に優れ、高解像度の
出力画像が得られることがわかる。また、欠陥がなく鮮
明な画像が安定して得られることがわかる。
From these results, it can be seen that the electrophotographic apparatus of the present invention is excellent in dot reproducibility and character reproducibility and can obtain a high-resolution output image. In addition, it can be seen that a clear image without defects is stably obtained.

【0125】[0125]

【発明の効果】以上説明した様に、本発明の電子写真感
光体は、400〜500nm付近の短波長の半導体レー
ザーの発振波長領域において高感度であり、また、繰り
返し帯電、露光による連続画像形成及び環境の変化に際
して明部電位と暗部電位の変動が小さく、高品位な画像
が安定して得られるという顕著な効果を奏する。また、
この電子写真感光体と上記半導体レーザーを組み合わせ
ることにより、高解像度の画像形成が可能で繰り返し使
用や環境変化にも安定して使用し得るプロセスカートリ
ッジ及び電子写真装置が提供される。
As described above, the electrophotographic photoreceptor of the present invention has high sensitivity in the oscillation wavelength region of a semiconductor laser having a short wavelength of about 400 to 500 nm, and forms a continuous image by repeated charging and exposure. In addition, there is a remarkable effect that a change in the light portion potential and the dark portion potential is small when the environment changes, and a high-quality image can be stably obtained. Also,
By combining this electrophotographic photoreceptor with the above-mentioned semiconductor laser, a process cartridge and an electrophotographic apparatus which can form a high-resolution image and can be used stably even under repeated use and environmental changes are provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の電子写真感光体の層構成の例を示す断
面図である。
FIG. 1 is a cross-sectional view illustrating an example of a layer configuration of an electrophotographic photoreceptor of the present invention.

【図2】本発明の電子写真感光体の層構成の例を示す断
面図である。
FIG. 2 is a cross-sectional view illustrating an example of a layer configuration of the electrophotographic photosensitive member of the present invention.

【図3】本発明の電子写真感光体の層構成の例を示す断
面図である。
FIG. 3 is a cross-sectional view illustrating an example of a layer configuration of the electrophotographic photosensitive member of the present invention.

【図4】本発明の電子写真感光体の層構成の例を示す断
面図である。
FIG. 4 is a cross-sectional view illustrating an example of a layer configuration of the electrophotographic photosensitive member of the present invention.

【図5】本発明の電子写真感光体の層構成の例を示す断
面図である。
FIG. 5 is a cross-sectional view illustrating an example of a layer configuration of the electrophotographic photosensitive member of the present invention.

【図6】本発明の電子写真感光体の層構成の例を示す断
面図である。
FIG. 6 is a cross-sectional view illustrating an example of a layer configuration of the electrophotographic photosensitive member of the present invention.

【図7】本発明の電子写真感光体を有するプロセスカー
トリッジを有する電子写真装置の概略構成の例を示す図
である。
FIG. 7 is a diagram illustrating an example of a schematic configuration of an electrophotographic apparatus having a process cartridge having an electrophotographic photosensitive member according to the present invention.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 金丸 哲郎 東京都大田区下丸子3丁目30番2号キヤノ ン株式会社内 (72)発明者 中島 由香 東京都大田区下丸子3丁目30番2号キヤノ ン株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Tetsuro Kanamaru 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Yuka Nakashima 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside the corporation

Claims (18)

【特許請求の範囲】[Claims] 【請求項1】 支持体上に感光層を有する電子写真感光
体において、該電子写真感光体が380〜500nmの
波長を有する半導体レーザー光を照射され、かつ該感光
層が下記式(1)、(2)または(3)で示される電荷
輸送物質を含有することを特徴とする電子写真感光体。 【外1】 (式中、Ar1-1 及びAr1-2 は置換基を有してもよい
芳香環基を示す。R1-1〜R1-4 は置換基を有してもよ
いアルキル基、置換基を有してもよいアラルキル基、置
換基を有してもよいビニル基及び置換基を有してもよい
芳香環基を示す(但し、R1-1 〜R1-4 のうち少なくと
も2つは置換基を有してもよい芳香環基である)。R
1-1 とR1-2 及びR1-3 とR1-4 は結合して環を形成し
てもよい。) 【外2】 (式中、Ar2-1 は置換基を有してもよい芳香環基を示
す。R2-1 〜R2-4 は置換基を有してもよいアルキル
基、置換基を有してもよいアラルキル基、置換基を有し
てもよいビニル基及び置換基を有してもよい芳香環基を
示す(但し、R2-1〜R2-4 のうち少なくとも2つは置
換基を有してもよい芳香環基である)。R2-1 とR2-2
及びR2-3 とR2-4 は結合して環を形成してもよい。) 【外3】 (式中、Ar3-1 及びAr3-2 は置換基を有してもよい
芳香環基を示す。R3-1〜R3-4 は置換基を有してもよ
いアルキル基、置換基を有してもよいアラルキル基、置
換基を有してもよいビニル基及び置換基を有してもよい
芳香環基を示す(但し、R3-1 〜R3-4 のうち少なくと
も2つは置換基を有してもよい芳香環基である)。R
3-1 とR3-2 及びR3-3 とR3-4 は結合して環を形成し
てもよい。X3-1 は2価の有機基を示す。)
1. An electrophotographic photosensitive member having a photosensitive layer on a support, wherein the electrophotographic photosensitive member is irradiated with a semiconductor laser beam having a wavelength of 380 to 500 nm, and the photosensitive layer has the following formula (1): An electrophotographic photoreceptor containing the charge transporting material represented by (2) or (3). [Outside 1] (In the formula, Ar 1-1 and Ar 1-2 each represent an aromatic ring group which may have a substituent. R 1-1 to R 1-4 each represent an alkyl group which may have a substituent, An aralkyl group which may have a group, a vinyl group which may have a substituent, and an aromatic ring group which may have a substituent (provided that at least two of R 1-1 to R 1-4 are represented by Is an aromatic ring group which may have a substituent).
1-1 and R 1-2 and R 1-3 and R 1-4 may combine to form a ring. [Outside 2] (Wherein, Ar 2-1 represents an aromatic ring group which may have a substituent. R 2-1 to R 2-4 each represent an alkyl group which may have a substituent, Aralkyl group, a vinyl group which may have a substituent, and an aromatic ring group which may have a substituent (provided that at least two of R 2-1 to R 2-4 represent a substituent. has also a good aromatic group) .R 2-1 and R 2-2
And R 2-3 and R 2-4 may combine to form a ring. [Outside 3] (In the formula, Ar 3-1 and Ar 3-2 represent an aromatic ring group which may have a substituent. R 3-1 to R 3-4 each represent an alkyl group which may have a substituent, An aralkyl group which may have a group, a vinyl group which may have a substituent, and an aromatic ring group which may have a substituent (provided that at least two of R 3-1 to R 3-4 are represented by Is an aromatic ring group which may have a substituent).
3-1 and R 3-2 and R 3-3 and R 3-4 may combine to form a ring. X 3-1 represents a divalent organic group. )
【請求項2】 電荷輸送物質が式(1)で示される請求
項1記載の電子写真感光体。
2. The electrophotographic photosensitive member according to claim 1, wherein the charge transporting material is represented by the formula (1).
【請求項3】 電荷輸送物質が式(2)で示される請求
項1記載の電子写真感光体。
3. The electrophotographic photosensitive member according to claim 1, wherein the charge transporting material is represented by the formula (2).
【請求項4】 電荷輸送物質が式(3)で示される請求
項1記載の電子写真感光体。
4. The electrophotographic photosensitive member according to claim 1, wherein the charge transporting material is represented by the formula (3).
【請求項5】 半導体レーザー光が有する波長が400
〜450nmである請求項1乃至4のいずれかに記載の
電子写真感光体。
5. The wavelength of a semiconductor laser beam is 400
The electrophotographic photoreceptor according to any one of claims 1 to 4, wherein the thickness is from 450 to 450 nm.
【請求項6】 感光層が電荷発生層上に電荷輸送層を有
する請求項1乃至5のいずれかに記載の電子写真感光
体。
6. The electrophotographic photosensitive member according to claim 1, wherein the photosensitive layer has a charge transport layer on the charge generation layer.
【請求項7】 電子写真感光体、及び帯電手段、現像手
段及びクリーニング手段から選択される少なくともひと
つの手段を一体に支持し、電子写真装置本体に着脱自在
であるプロセスカートリッジにおいて、 該電子写真感光体が支持体上に感光層を有し、380〜
500nmの波長を有するレーザー光を照射され、該感
光層が下記式(1)、(2)または(3)で示される電
荷輸送物質を含有することを特徴とするプロセスカート
リッジ。 【外4】 (式中、Ar1-1 及びAr1-2 は置換基を有してもよい
芳香環基を示す。R1-1〜R1-4 は置換基を有してもよ
いアルキル基、置換基を有してもよいアラルキル基、置
換基を有してもよいビニル基及び置換基を有してもよい
芳香環基を示す(但し、R1-1 〜R1-4 のうち少なくと
も2つは置換基を有してもよい芳香環基である)。R
1-1 とR1-2 及びR1-3 とR1-4 は結合して環を形成し
てもよい。) 【外5】 (式中、Ar2-1 は置換基を有してもよい芳香環基を示
す。R2-1 〜R2-4 は置換基を有してもよいアルキル
基、置換基を有してもよいアラルキル基、置換基を有し
てもよいビニル基及び置換基を有してもよい芳香環基を
示す(但し、R2-1〜R2-4 のうち少なくとも2つは置
換基を有してもよい芳香環基である)。R2-1 とR2-2
及びR2-3 とR2-4 は結合して環を形成してもよい。) 【外6】 (式中、Ar3-1 及びAr3-2 は置換基を有してもよい
芳香環基を示す。R3-1〜R3-4 は置換基を有してもよ
いアルキル基、置換基を有してもよいアラルキル基、置
換基を有してもよいビニル基及び置換基を有してもよい
芳香環基を示す(但し、R3-1 〜R3-4 のうち少なくと
も2つは置換基を有してもよい芳香環基である)。R
3-1 とR3-2 及びR3-3 とR3-4 は結合して環を形成し
てもよい。X3-1 は2価の有機基を示す。)
7. A process cartridge which integrally supports an electrophotographic photosensitive member and at least one means selected from a charging means, a developing means and a cleaning means and is detachable from an electrophotographic apparatus main body. The body has a photosensitive layer on the support,
A process cartridge, which is irradiated with a laser beam having a wavelength of 500 nm, and the photosensitive layer contains a charge transporting material represented by the following formula (1), (2) or (3). [Outside 4] (In the formula, Ar 1-1 and Ar 1-2 each represent an aromatic ring group which may have a substituent. R 1-1 to R 1-4 each represent an alkyl group which may have a substituent, An aralkyl group which may have a group, a vinyl group which may have a substituent, and an aromatic ring group which may have a substituent (provided that at least two of R 1-1 to R 1-4 are represented by Is an aromatic ring group which may have a substituent).
1-1 and R 1-2 and R 1-3 and R 1-4 may combine to form a ring. [Outside 5] (Wherein, Ar 2-1 represents an aromatic ring group which may have a substituent. R 2-1 to R 2-4 each represent an alkyl group which may have a substituent, Aralkyl group, a vinyl group which may have a substituent, and an aromatic ring group which may have a substituent (provided that at least two of R 2-1 to R 2-4 represent a substituent. has also a good aromatic group) .R 2-1 and R 2-2
And R 2-3 and R 2-4 may combine to form a ring. [Outside 6] ( Wherein , Ar 3-1 and Ar 3-2 represent an aromatic ring group which may have a substituent. R 3-1 to R 3-4 each represent an alkyl group which may have a substituent, An aralkyl group which may have a group, a vinyl group which may have a substituent, and an aromatic ring group which may have a substituent (provided that at least two of R 3-1 to R 3-4 are represented by Is an aromatic ring group which may have a substituent).
3-1 and R 3-2 and R 3-3 and R 3-4 may combine to form a ring. X 3-1 represents a divalent organic group. )
【請求項8】 電荷輸送物質が式(1)で示される請求
項7記載のプロセスカートリッジ。
8. The process cartridge according to claim 7, wherein the charge transport material is represented by the formula (1).
【請求項9】 電荷輸送物質が式(2)で示される請求
項7記載のプロセスカートリッジ。
9. The process cartridge according to claim 7, wherein the charge transport material is represented by the formula (2).
【請求項10】 電荷輸送物質が式(3)で示される請
求項7記載のプロセスカートリッジ。
10. The process cartridge according to claim 7, wherein the charge transport material is represented by the formula (3).
【請求項11】 半導体レーザー光が有する波長が40
0〜450nmである請求項7乃至10のいずれかに記
載のプロセスカートリッジ。
11. A semiconductor laser beam having a wavelength of 40.
The process cartridge according to any one of claims 7 to 10, wherein the thickness is from 0 to 450 nm.
【請求項12】 感光層が電荷発生層上に電荷輸送層を
有する請求項7乃至11のいずれかに記載のプロセスカ
ートリッジ。
12. The process cartridge according to claim 7, wherein the photosensitive layer has a charge transport layer on the charge generation layer.
【請求項13】 電子写真感光体、帯電手段、露光手
段、現像手段及び転写手段を有する電子写真装置におい
て、 該露光手段が露光光源として380〜500nmの発振
波長を有する半導体レーザーを有し、 該電子写真感光体が支持体上に感光層を有し、該感光層
が下記式(1)、(2)または(3)で示される電荷輸
送物質を含有することを特徴とする電子写真装置。 【外7】 (式中、Ar1-1 及びAr1-2 は置換基を有してもよい
芳香環基を示す。R1-1〜R1-4 は置換基を有してもよ
いアルキル基、置換基を有してもよいアラルキル基、置
換基を有してもよいビニル基及び置換基を有してもよい
芳香環基を示す(但し、R1-1 〜R1-4 のうち少なくと
も2つは置換基を有してもよい芳香環基である)。R
1-1 とR1-2 及びR1-3 とR1-4 は結合して環を形成し
てもよい。) 【外8】 (式中、Ar2-1 は置換基を有してもよい芳香環基を示
す。R2-1 〜R2-4 は置換基を有してもよいアルキル
基、置換基を有してもよいアラルキル基、置換基を有し
てもよいビニル基及び置換基を有してもよい芳香環基を
示す(但し、R2-1〜R2-4 のうち少なくとも2つは置
換基を有してもよい芳香環基である)。R2-1 とR2-2
及びR2-3 とR2-4 は結合して環を形成してもよい。) 【外9】 (式中、Ar3-1 及びAr3-2 は置換基を有してもよい
芳香環基を示す。R3-1〜R3-4 は置換基を有してもよ
いアルキル基、置換基を有してもよいアラルキル基、置
換基を有してもよいビニル基及び置換基を有してもよい
芳香環基を示す(但し、R3-1 〜R3-4 のうち少なくと
も2つは置換基を有してもよい芳香環基である)。R
3-1 とR3-2 及びR3-3 とR3-4 は結合して環を形成し
てもよい。X3-1 は2価の有機基を示す。)
13. An electrophotographic apparatus having an electrophotographic photosensitive member, a charging unit, an exposing unit, a developing unit, and a transferring unit, wherein the exposing unit has a semiconductor laser having an oscillation wavelength of 380 to 500 nm as an exposure light source. An electrophotographic apparatus, wherein an electrophotographic photoreceptor has a photosensitive layer on a support, and the photosensitive layer contains a charge transporting material represented by the following formula (1), (2) or (3). [Outside 7] (In the formula, Ar 1-1 and Ar 1-2 each represent an aromatic ring group which may have a substituent. R 1-1 to R 1-4 each represent an alkyl group which may have a substituent, An aralkyl group which may have a group, a vinyl group which may have a substituent, and an aromatic ring group which may have a substituent (provided that at least two of R 1-1 to R 1-4 are represented by Is an aromatic ring group which may have a substituent).
1-1 and R 1-2 and R 1-3 and R 1-4 may combine to form a ring. [Outside 8] (Wherein, Ar 2-1 represents an aromatic ring group which may have a substituent. R 2-1 to R 2-4 each represent an alkyl group which may have a substituent, Aralkyl group, a vinyl group which may have a substituent, and an aromatic ring group which may have a substituent (provided that at least two of R 2-1 to R 2-4 represent a substituent. has also a good aromatic group) .R 2-1 and R 2-2
And R 2-3 and R 2-4 may combine to form a ring. [Outside 9] (In the formula, Ar 3-1 and Ar 3-2 represent an aromatic ring group which may have a substituent. R 3-1 to R 3-4 each represent an alkyl group which may have a substituent, An aralkyl group which may have a group, a vinyl group which may have a substituent, and an aromatic ring group which may have a substituent (provided that at least two of R 3-1 to R 3-4 are represented by Is an aromatic ring group which may have a substituent).
3-1 and R 3-2 and R 3-3 and R 3-4 may combine to form a ring. X 3-1 represents a divalent organic group. )
【請求項14】 電荷輸送物質が式(1)で示される請
求項13記載の電子写真装置。
14. The electrophotographic apparatus according to claim 13, wherein the charge transporting substance is represented by the formula (1).
【請求項15】 電荷輸送物質が式(2)で示される請
求項13記載の電子写真装置。
15. The electrophotographic apparatus according to claim 13, wherein the charge transporting substance is represented by the formula (2).
【請求項16】 電荷輸送物質が式(3)で示される請
求項13記載の電子写真装置。
16. The electrophotographic apparatus according to claim 13, wherein the charge transporting substance is represented by the formula (3).
【請求項17】 半導体レーザー光が有する波長が40
0〜450nmである請求項13乃至16のいずれかに
記載の電子写真装置。
17. The semiconductor laser beam has a wavelength of 40.
The electrophotographic apparatus according to any one of claims 13 to 16, wherein the thickness is from 0 to 450 nm.
【請求項18】 感光層が電荷発生層上に電荷輸送層を
有する請求項13乃至17のいずれかに記載の電子写真
装置。
18. The electrophotographic apparatus according to claim 13, wherein the photosensitive layer has a charge transport layer on the charge generation layer.
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* Cited by examiner, † Cited by third party
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JP2002023395A (en) * 2000-07-11 2002-01-23 Mitsubishi Chemicals Corp Electrophotographic photoreceptor
JP2002072521A (en) * 2000-09-04 2002-03-12 Sharp Corp Electrophotographic photoreceptor
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JP2007531762A (en) * 2004-03-31 2007-11-08 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Triarylamine compounds used as charge transport materials
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