JP2000103667A - Al2O3-TiC-BASED SINTERED PRODUCT AND SUBSTRATE FOR THIN FILM MAGNETIC HEAD USING THE SAME ii - Google Patents

Al2O3-TiC-BASED SINTERED PRODUCT AND SUBSTRATE FOR THIN FILM MAGNETIC HEAD USING THE SAME ii

Info

Publication number
JP2000103667A
JP2000103667A JP10276907A JP27690798A JP2000103667A JP 2000103667 A JP2000103667 A JP 2000103667A JP 10276907 A JP10276907 A JP 10276907A JP 27690798 A JP27690798 A JP 27690798A JP 2000103667 A JP2000103667 A JP 2000103667A
Authority
JP
Japan
Prior art keywords
tic
sintered body
al2o3
based sintered
crystal grain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10276907A
Other languages
Japanese (ja)
Inventor
Hiroyuki Yokote
博行 横手
Tatsuya Kimura
達哉 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP10276907A priority Critical patent/JP2000103667A/en
Publication of JP2000103667A publication Critical patent/JP2000103667A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To improve the surface grade after ion irradiation treatment and to prevent crystal grains from falling off by specifying the composition of a sintered compact including Al2O3 and TiC as main components and also a sintering additive component and by specifying its crystal grain size and its standard deviation. SOLUTION: When an Al2O3-TiC-based sintered compact includes (i) 100 pts.wt. main component consisting of 50-75 wt.% Al2O3 and 25-50 wt.% TiC and (ii) 0.03-0.5 pts.wt. sintering additive, an average crystal grain size corresponding to the circle is 0.4-1.2 μm and the standard deviation of crystal grain diameter corresponding to the circle is <=0.35. It is pref. that tenacity value K1c to cleavage fracture of the sintered compact is >=4.0 MPa.m0.5 and Young's modulus is 400 Mpa. This sintered compact is obtained by blending powder of Al2O3 and TiC both having ca. 0.3-1.5 μm with a sintering additive (e.g. MgO, Y2O3, CaO, Yb2O3, SiO2 or the like) in a predetermined content ratio and then calcining then mixture at ca. 1,500-1,750 deg.C by a hot press moulding.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は薄膜磁気ヘッド用基
板や治具、測定用治具などに用いられるAl2O3-TiC 系焼
結体に関するものであり、具体的にはスライシング加工
のような機械加工、及びイオンミリング、反応性イオン
エッチング法(Reactive Ion Etching法)等のイオン照
射による表面加工に適し、磁気ヘッドを形成した際、結
晶粒子のチッピング等といった粒子脱落を防止できるAl
2O3-TiC 系焼結体に関する。
The present invention is a substrate or a jig for a thin film magnetic head BACKGROUND OF THE INVENTION relates to a measuring jig Al 2 O 3 -TiC based sintered body used for such, in particular as Slicing Al that can prevent particle dropping such as chipping of crystal grains when forming a magnetic head when forming a magnetic head. It is suitable for simple machining and surface processing by ion irradiation such as ion milling and reactive ion etching (Reactive Ion Etching).
The present invention relates to a 2 O 3 -TiC-based sintered body.

【0002】[0002]

【従来の技術】従来より、磁気ヘッドの中でも薄膜磁気
ヘッドは所定の基板の表面にスパッタリングなどの薄膜
手法により磁気ヘッド回路を形成するもので磁気ギャッ
プが小さく制御できるために高密度記録が可能である。
この薄膜磁気ヘッドにおいて用いられる基板は、磁気記
録媒体と対面する表面がスライダー浮上面として機能す
ることから、その基板表面には溝やステップ部などの種
々の加工が、また所望のヘッドの形状にスライシング加
工が施される。
2. Description of the Related Art Conventionally, among magnetic heads, a thin film magnetic head has a magnetic head circuit formed on the surface of a predetermined substrate by a thin film technique such as sputtering, and the magnetic gap can be controlled to be small, so that high density recording is possible. is there.
Since the substrate used in this thin-film magnetic head has a surface facing the magnetic recording medium functioning as a slider floating surface, various processes such as grooves and step portions are formed on the substrate surface, and a desired head shape is obtained. Slicing is performed.

【0003】従来からこれらの加工方法が行われるため
に、基板としては耐摩耗性、鏡面加工性、耐チッピング
性及び機械加工性に優れるなどの特性が要求されてい
る。
Conventionally, since these processing methods are performed, a substrate is required to have characteristics such as excellent wear resistance, mirror surface processing, chipping resistance, and machinability.

【0004】これらの要求に満足しえる材料の1つとし
て、Al2O3 に対してTiC を含有するAl2O3-TiC 系焼結体
が多用されている。このAl2O3-TiC 系焼結体は、上記特
性を満足させるためにMgO やY2O3、Yb2O3 などの焼結助
剤を添加し、完全に緻密焼結体とすることにより鏡面加
工性を向上させたり、焼結体の結晶粒を1.5 〜3 μm程
度に粒成長させることによりスライシング時の耐チッピ
ング性や機械加工性を向上させていた。
[0004] One may satisfy these requirements materials, Al 2 O 3 -TiC based sintered body containing TiC against Al 2 O 3 is often used. This Al 2 O 3 -TiC-based sintered body should be made completely dense by adding sintering aids such as MgO, Y 2 O 3 , and Yb 2 O 3 to satisfy the above characteristics. Thus, the mirror workability has been improved, and the chipping resistance during slicing and the machinability have been improved by growing the crystal grains of the sintered body to about 1.5 to 3 μm.

【0005】一方、最近では磁気記録の高密度化に伴
い、磁気ヘッドの磁気記録面からの浮上量がさらに小さ
くなりつつあり、これに伴い、スライダー浮上面には平
面度、面粗さ、クラウン、キャンバー等の高い寸法精度
要求される加工が施され、その代表的なものに、TPC
(Transverse Pressurization Contour )がある。従来
の機械加工ではこれらの要求に対しては十分に満足すべ
き加工ができないためにAr+ といったイオンを加工鏡面
に照射しながら加工を行うイオンミリング法、あるいは
CF4 、CCl4、BCl3等の反応性ガス中でイオンを加工鏡面
に照射しながら加工を行う、いわゆるRIE 法による加工
が施されている。
On the other hand, recently, as the magnetic recording density has increased, the flying height of the magnetic head from the magnetic recording surface has been further reduced, and accordingly, the flatness, surface roughness, crown , Camber, etc., required high dimensional accuracy.
(Transverse Pressurization Contour). In conventional machining, these requirements cannot be met with sufficient satisfaction, so the ion milling method, which performs machining while irradiating the machining mirror surface with ions such as Ar +, or
Processing is performed by the so-called RIE method in which processing is performed while irradiating ions to a processing mirror surface in a reactive gas such as CF 4 , CCl 4 , and BCl 3 .

【0006】[0006]

【発明が解決しようとする課題】従来のAl2O3-TiC 系焼
結体は、1.5 〜3 μm 程度に粒成長させたり、特開57-1
35773 に示されるようにMgO やNiO 、Cr2O、或いはZrO2
といった快削性付与剤を0.5 〜5 重量程度添加すること
により、機械加工における耐チッピング性を向上させる
ことが知られている。
A conventional Al 2 O 3 —TiC-based sintered body has a grain size of about 1.5 to 3 μm,
As shown in 35773, MgO, NiO, Cr 2 O, or ZrO 2
It is known that the addition of such a free-cutting property imparting agent in an amount of about 0.5 to 5 weight improves the chipping resistance in machining.

【0007】しかしながら、いずれもスライシング加工
といった機械加工による耐チッピング性は向上するが、
現在のヘッドの浮上面となるABS レール加工が施される
イオンミリング或いはRIE のような加工においては、粒
子径が大きいとAl2O3 とTiCの段差が顕著にあらわれ、
また快削性付与剤が該加工によりAl2O3 やTiC のミリン
グレートの違いにより突起や穴の発生を伴い、満足でき
る面品位を得難いといった問題があった。
However, although the chipping resistance is improved by machining such as slicing,
In processes such as ion milling or RIE in which ABS rail processing that is the air bearing surface of the current head is applied, when the particle diameter is large, the step between Al 2 O 3 and TiC appears remarkably,
In addition, the free-cutting property imparting agent has a problem that projections and holes are generated due to a difference in the milling rate of Al 2 O 3 or TiC due to the processing, and it is difficult to obtain a satisfactory surface quality.

【0008】そのため、本願出願人はAl2O3-TiC 系焼結
体において、先に特開平7-242463においてAl2O3 の平均
粒径がTiC のそれより5 〜50%大きく、さらには結晶全
体の平均結晶粒径が1μm 以下、TiC の平均結晶粒径が
0.9 μm 以下であり結晶粒の粒界相の含有量が1.0 重量
%以下である焼結体を提案し、これによればイオンミリ
ング性、RIE 性といった加工面品位は向上している。
[0008] Therefore, in the present applicant Al 2 O 3 -TiC based sintered body, previously an average particle size of the Al 2 O 3 in JP-A 7-242463 is 5 to 50% than that of TiC increased, more The average grain size of the whole crystal is 1 μm or less, and the average grain size of TiC is
A sintered body having a grain boundary phase content of 1.0 μm or less and a grain size of 0.9 μm or less has been proposed, and according to this, the processed surface quality such as ion milling property and RIE property has been improved.

【0009】また、HDD 装置に装着した際、ヘッドとメ
ディアの接触衝撃による粒子脱落のないヘッド材料が近
年求められており、現在までのところ有力な知見が得ら
れておらず、結晶間の結合力を高める、即ち焼結性を向
上させることが必要とされている。焼結性の向上のため
には焼成温度を上げる、或いは焼結助剤成分を添加する
という方法があるが、焼成温度を上げと結晶粒子の成長
が起こり微細結晶を得難い。焼結助剤成分添加はイオン
ミリングやRIE 時に加工レートの違いにより加工後の表
面品位が劣化するといった問題がおこり十分な解決策に
は至っていない。
In addition, there has been a recent demand for a head material which is free from particles falling off due to the impact of contact between the head and the medium when the head material is mounted on an HDD device, and no strong knowledge has been obtained so far. There is a need to increase the force, ie, improve the sinterability. In order to improve the sinterability, there is a method of increasing the firing temperature or adding a sintering aid component. However, when the firing temperature is increased, crystal grains grow and it is difficult to obtain fine crystals. Adding a sintering aid component has not been a sufficient solution due to the problem that the surface quality after processing deteriorates due to the difference in processing rate during ion milling or RIE.

【0010】従って、本発明の目的は、イオンミリン
グ、RIE 加工などのイオン照射により加工を施す必要が
ある場合において、加工後の表面品位に優れると共に磁
気ヘッドの結晶粒子脱落のないヘッド部材に好適な薄膜
磁気ヘッド用基板、及びこれに用いるAl2O3-TiC 系焼結
体を提供することを目的とする。
Therefore, an object of the present invention is to provide a head member which is excellent in surface quality after processing and in which crystal grains of a magnetic head do not fall off when processing by ion irradiation such as ion milling or RIE processing is required. It is an object of the present invention to provide a thin-film magnetic head substrate and an Al 2 O 3 —TiC-based sintered body used for the substrate.

【0011】[0011]

【課題を解決するための手段】本発明者らは上記問題点
に対して検討を重ねた結果、Al2O3 とTiC の焼結体にお
ける結晶粒子径を制御し、結晶粒子の円相当径の標準偏
差を小さくすることにより、焼結に伴い焼結体内部に介
在する内部応力を緩和し、破壊に対する靱性を向上させ
ることができ、スライシング加工時の耐チッピング性、
ヘッドの粒子脱落が従来の焼結体に比較して大幅に改善
できることを知見し、本発明に至った。
Means for Solving the Problems The inventors of the present invention have studied the above problems, and as a result, have controlled the crystal particle diameter in the sintered body of Al 2 O 3 and TiC to obtain a circle equivalent diameter of the crystal particles. By reducing the standard deviation of sintering, the internal stress interposed inside the sintered body due to sintering can be relaxed, the toughness against fracture can be improved, the chipping resistance during slicing,
The present inventors have found that the dropout of head particles can be significantly improved as compared with a conventional sintered body, and have reached the present invention.

【0012】即ち、本発明のAl2O3-TiC 系焼結体はAl2O
3 とTiC を主成分とし、焼結助剤成分を0.03〜0.5 重量
%含有するAl2O3-TiC 系焼結体であって、該焼結体中の
平均結晶粒子径が0.4 〜1.2 μm 以下で、且つ各結晶粒
子の円相当径の標準偏差が0.35以下であることを特徴と
するものである。
Namely, Al 2 O 3 -TiC based sintered body of the present invention is Al 2 O
An Al 2 O 3 -TiC-based sintered body containing 0.03 to 0.5% by weight of a sintering aid component containing 3 and TiC as main components, wherein the average crystal grain size in the sintered body is 0.4 to 1.2 μm And the standard deviation of the equivalent circle diameter of each crystal grain is 0.35 or less.

【0013】さらに本発明によれば、上記Al2O3-TiC 系
焼結体は劈開破壊に対する靱性値K1c が4.0MPa ・√m 以
上を有し、且つヤング率が400MPa以上であることを特徴
とするものである。
Further, according to the present invention, the Al 2 O 3 —TiC-based sintered body has a toughness value K1c against cleavage fracture of 4.0 MPa · √m or more and a Young's modulus of 400 MPa or more. It is assumed that.

【0014】以下、本発明を詳述する。本発明における
Al2O3-TiC 系焼結体は、Al2O3 とTiC を主成分とするも
のであり、それぞれ50〜75重量%、25〜50重量%の割合
で含有するものである。両成分を上記の範囲に限定した
のは、TiC 量が25%より少ないと耐チッピング性が低下
し、50重量%を越えると表面品位は向上するもののディ
スクとの接点が多くなるため磁気ヘッドスライダーとし
ての摺動特性が低下する為である。
Hereinafter, the present invention will be described in detail. In the present invention
The Al 2 O 3 -TiC-based sintered body contains Al 2 O 3 and TiC as main components, and contains 50 to 75% by weight and 25 to 50% by weight, respectively. The reason why both components are limited to the above ranges is that when the amount of TiC is less than 25%, chipping resistance is reduced, and when the amount exceeds 50% by weight, the surface quality is improved but the number of contact points with the disk is increased, so that the magnetic head slider is increased. This is because the sliding characteristics as described above deteriorate.

【0015】上記組成からなる焼結体は、組成上はAl2O
3 結晶粒とTiC 結晶相により構成されるが、焼結助剤成
分が含まれると、イオンミリング及びRIE 加工において
加工レートの違いにより段差形状に突起や穴が形成され
摺動特性が低下する恐れがある。そこで、本発明は焼結
助剤成分の含有量を0.05〜0.3 重量部と少なくしてあ
る。
The sintered body having the above composition is composed of Al 2 O
Although composed of three crystal grains and a TiC crystal phase, if a sintering aid component is included, projections and holes may be formed in a stepped shape due to differences in the processing rate during ion milling and RIE processing, and the sliding characteristics may decrease. There is. Therefore, in the present invention, the content of the sintering aid component is reduced to 0.05 to 0.3 parts by weight.

【0016】なお、上記焼結助剤成分の添加量0.05重量
部未満では焼結性が悪く、また0.3重量部を越えると焼
結性を向上するが、加工後の表面品位が低下し摺動特性
が低下する。焼結助剤としてはMgO 、Y2O3、CaO 、Yb2O
3 、SiO2等が用いられる。
If the amount of the sintering aid component is less than 0.05 parts by weight, the sinterability is poor. If the amount exceeds 0.3 parts by weight, the sinterability is improved. The characteristics deteriorate. The sintering aid MgO, Y 2 O 3, CaO , Yb 2 O
3 , SiO 2 or the like is used.

【0017】また、焼結体の結晶の円相当径の平均値を
限定したのは、平均結晶粒子径が0.4 μm より小さいと
スライシング加工により加工負荷が大となり、焼結助剤
成分の添加が極微量であるために耐チッピング性が低下
し、逆に1.2 μm より大きいとスライシング加工性は向
上し、耐チッピング性には優れるが、前述したようにイ
オンミリングやRIE といった表面加工により、表面品位
が低下し、磁気ヘッドの浮上特性に大きく影響を与え、
更には磁気ヘッドの浮上量が安定せず、ヘッド特性が安
定しないくなるためである。0.4 〜1.2 μm であれば好
適な加工面品位が得られ、ヘッドの特性を安定化させる
ことができる。
The reason why the average value of the equivalent circle diameter of the crystal of the sintered body is limited is that when the average crystal particle diameter is smaller than 0.4 μm, the processing load is increased by slicing, and the addition of the sintering aid component is not required. Since the amount is extremely small, chipping resistance is reduced. Conversely, if it is larger than 1.2 μm, slicing workability is improved and chipping resistance is excellent, but as described above, surface quality is improved by surface milling such as ion milling and RIE. And greatly affects the flying characteristics of the magnetic head,
Further, the flying height of the magnetic head is not stable, and the head characteristics are not stable. If it is 0.4 to 1.2 μm, a suitable processed surface quality can be obtained and the characteristics of the head can be stabilized.

【0018】また、結晶の円相当径のばらつきが大きい
と、即ち標準偏差が0.35を越えると、スライシング加工
性が悪くなり、チッピングが増大し、加工面が粗くな
る。その為、ヘッドが衝撃を受けた際、加工面が粗いた
めに粒子が脱落しやすくなる。
On the other hand, if the variation of the crystal equivalent diameter is large, that is, if the standard deviation exceeds 0.35, the slicing workability deteriorates, chipping increases, and the processed surface becomes rough. Therefore, when the head receives an impact, the particles are likely to fall off due to the roughened processing surface.

【0019】本発明の上記Al2O3-TiC 系焼結体は、例え
ばAl2O3 粉末とTiC 粉末を、さらには所定の焼結助剤を
前述したような所定の比率で添加した後、ボールミルな
どの任意の方法により混合し、成形した後、その成形体
を1500〜1750℃、Al2O3 とTiC の重量比が概ね7:3 であ
り、一次粒子の平均結晶粒径が1.0 μm 前後の場合、望
ましくは1700〜1730℃の温度範囲でホットプレス法によ
り焼成すればよい。また熱間静水圧焼成法(HIP 法)等
によっても焼結できる。前述したようにAl2O3結晶粒とT
iC 結晶粒を制御するには、出発原料としていずれも粒
径の小さく、望ましくはAl2O3 が平均粒子径0.3 〜1.0
μm 、TiC は0.3 〜1.5 μm のものを用いる。また粒度
ばらつきの小さい、形状の揃った原料を用い、粒成長を
防ぐために焼成温度をできるだけ低く設定することが望
ましい。
The Al 2 O 3 —TiC-based sintered body of the present invention is obtained by adding, for example, Al 2 O 3 powder and TiC powder, and further adding a predetermined sintering aid at a predetermined ratio as described above. After mixing and molding by an arbitrary method such as a ball mill, the molded body is 1500 to 1750 ° C., the weight ratio of Al 2 O 3 and TiC is approximately 7: 3, and the average crystal grain size of the primary particles is 1.0. In the case of about μm, firing is preferably performed by a hot press method in a temperature range of 1700 to 1730 ° C. Sintering can also be performed by a hot isostatic firing method (HIP method) or the like. As described above, Al 2 O 3 grains and T
In order to control the iC crystal grains, the starting materials are all small in particle size, preferably Al 2 O 3 having an average particle size of 0.3 to 1.0.
μm and TiC of 0.3 to 1.5 μm are used. It is also desirable to use a raw material having a small particle size variation and a uniform shape, and to set the firing temperature as low as possible in order to prevent grain growth.

【0020】[0020]

【実施例】粒径の揃った球状Al2O3 原料(純度99.9% 以
上)及びTiC 原料(純度99.5% 以上)を使用し、これら
をAl2O3 70重量%、TiC 30重量%となるように秤量し、
その中にTiC に対して約15重量%のTiO2を添加後、Al2O
3 ボールにて湿式混合した。次いで、所望の形状に成形
し、1700℃、250kg/cm2 の圧力で1時間ホットプレス焼
成した。尚、実験ではAl2O3 原料粉末として平均粒径が
0.3 〜1.5 μm 、TiC 原料粉末として平均粒径が0.3 〜
2.0 μm を使用し、数種の焼結体を作製した。
[Example] Spherical Al 2 O 3 raw material (purity 99.9% or more) and TiC raw material (purity 99.5% or more) with uniform particle diameters are used, and these become 70% by weight of Al 2 O 3 and 30% by weight of TiC. Weigh as
After adding about 15% by weight of TiO 2 to TiC, Al 2 O
Wet-mixed with 3 balls. Then, it was formed into a desired shape and baked by hot pressing at 1700 ° C. and a pressure of 250 kg / cm 2 for 1 hour. In the experiment, the average particle size of the Al 2 O 3 raw material powder was
0.3-1.5 μm, average particle size of 0.3-1.5 as TiC raw material powder
Several types of sintered bodies were produced using 2.0 μm.

【0021】得られた焼結体に対してその表面を鏡面加
工後、平均結晶粒径、円相当径の標準偏差、及び破壊靱
性値としてK1c を測定した。なお、結晶粒径の測定は金
属顕微鏡により2000倍の倍率で写真を撮影し、その
写真からコード法を採用して測定を行った。またK1c の
測定は10kgf/cm2 の荷重にてIndentation Fracture法
(IF法)により行った。また、結晶の円相当径の標準偏
差の測定は、焼結体を鏡面加工し2000倍の金属顕微鏡写
真から任意に選んだ200 個の粒子のサイズを測定し、標
準偏差を算出した。
After the surface of the obtained sintered body was mirror-finished, the average crystal grain size, the standard deviation of the circle equivalent diameter, and the K1c as a fracture toughness value were measured. In addition, for the measurement of the crystal grain size, a photograph was taken at a magnification of 2000 times with a metal microscope, and the measurement was performed from the photograph by employing a code method. The K1c was measured by an indentation fracture method (IF method) under a load of 10 kgf / cm 2 . In addition, the standard deviation of the equivalent circle diameter of the crystal was measured by mirror-processing the sintered body, measuring the size of 200 particles arbitrarily selected from a 2000-fold metallographic photograph, and calculating the standard deviation.

【0022】耐チッピング性については上記各試料を3
×4 ×30mmの矩形状に切断し、その表面が鏡面となるま
で錫盤等を用いてラッピングし、次いでダイヤモンドホ
イル( レジン#325 、φ110mm ×1mmt) を回転数5500rp
m 、送り40mm/minに設定し、これを用いて上記矩形体を
切断し、その切断面よりチッピング評価を得た。評価基
準としてダイヤモンドホイルが通過した界面からチッピ
ングにより除去された部分の長さを測定した。ダイヤモ
ンドホイルが通過した界面の任意の500 μm を選び、最
大チッピング幅並びにそれ以下で最も大きなチッピング
幅をもつ5 点を選び、その5 点の平均チッピング幅を評
価基準としており、その平均チッピング幅が大きくなる
と耐チッピング性が劣化するとした。このような評価基
準は表1に示す通りである。
Each of the above samples was tested for chipping resistance by 3
It is cut into a rectangular shape of × 4 × 30 mm, wrapped using a tin plate or the like until the surface becomes a mirror surface, and then a diamond foil (resin # 325, φ110 mm × 1 mmt) is rotated at 5500 rp.
m, the feed was set to 40 mm / min, and the rectangular body was cut using this, and chipping evaluation was obtained from the cut surface. As an evaluation standard, the length of a portion removed by chipping from the interface through which the diamond foil passed was measured. An arbitrary 500 μm of the interface through which the diamond foil has passed is selected, the maximum chipping width and the five points with the largest chipping widths below that are selected, and the average chipping width of the five points is used as an evaluation criterion. It was stated that the chipping resistance was degraded as the size became larger. Such evaluation criteria are as shown in Table 1.

【0023】機械加工性については上記円盤状焼結体を
φ76mm、厚み4mm の円形状に研磨し、次いでダイヤモン
ドホイル( レジン#325 、φ110mm ×1mmt) を回転数55
00rpm 、送り100mm/min に設定し、これを用いて上記円
板を切断したその切断に際してダイヤモンドホイルの主
軸に接続された回転駆動用モータの負荷電流を測定し、
定常切断時の平均電流値を求めた。この平均電流値が大
きくなると切断抵抗が大きくなり、これに伴って機械加
工性が低下することを示しており、その評価基準として
は○印、△印、×印の3段階に区分し、順次機械加工性
が低下することを表す。
Regarding the machinability, the disk-shaped sintered body was polished into a circular shape having a diameter of 76 mm and a thickness of 4 mm, and then a diamond foil (resin # 325, φ110 mm × 1 mmt) was rotated at 55 rpm.
00rpm, set to feed 100mm / min, cut the disk using this, when cutting, measured the load current of the rotary drive motor connected to the main shaft of the diamond foil,
The average current value during steady cutting was determined. It shows that when the average current value increases, the cutting resistance increases and the machinability decreases accordingly. The evaluation criterion is divided into three grades of ○, △, and ×. It indicates that machinability decreases.

【0024】表1によれば平均粒子径が大きくなると共
に粒子径の標準偏差が顕著にあらわれている。
According to Table 1, the average particle diameter increases and the standard deviation of the particle diameter appears remarkably.

【0025】試料1はK1c が大きく耐チッピング性に優
れるが平均結晶粒径が小さいために加工負荷が大きくな
り、機械加工性が劣化している。
Sample 1 has a large K1c and is excellent in chipping resistance, but has a small average crystal grain size, so that the processing load is increased and the machinability is deteriorated.

【0026】試料4,5から判るように平均粒子径は同
等であっても、標準偏差が大、即ち粒子径のバラツキが
大きいとチッピング性が悪くなっている。これは局所的
に粒径の大きな粒子が存在し、加工の際に負荷がその粒
子にかかりやすくなりチッピング、即ち粒子脱落が発生
しやすくなったものと考えられる。
As can be seen from Samples 4 and 5, even if the average particle diameters are the same, the chipping property is deteriorated if the standard deviation is large, that is, if the particle diameter varies widely. This is presumably because particles having a large particle size exist locally, and a load is easily applied to the particles during processing, so that chipping, that is, particle detachment is likely to occur.

【0027】試料7,8,9は平均粒子径が大きいため
に機械加工による負荷が低減されるため、加工には好適
であるが、平均粒子径が大きいために、耐チッピング性
の劣化がみられた。また試料8は粒子径の標準偏差が小
さいが、平均粒子径が大きいために粒子脱落の発生によ
り、より大きなチッピングとなっていた。更に、K1cが
小さくなっていく傾向にある。これらの傾向は平均一次
粒子径が大きいと焼結性が悪くなるためにAl2O3 とTiC
の接合強度が弱くなり、剛性或いは靱性が低くなること
が考えられる。
Samples 7, 8, and 9 are suitable for machining because the load due to machining is reduced because the average particle diameter is large, but the chipping resistance is deteriorated because the average particle diameter is large. Was done. In sample 8, the standard deviation of the particle diameter was small, but the chipping was larger due to the dropping of particles due to the large average particle diameter. Furthermore, K1c tends to decrease. The tendency is that if the average primary particle size is large, the sinterability deteriorates, so Al 2 O 3 and TiC
It is conceivable that the bonding strength becomes weak and the rigidity or toughness becomes low.

【0028】[0028]

【表1】 [Table 1]

【0029】[0029]

【発明の効果】以上詳述したように、本発明によれば、
Al2O3-TiC 系焼結体における平均結晶粒子径を0.4 〜1.
2 μm とし、個々の結晶粒子径の標準偏差を0.35以下と
することにより、耐チッピング性を向上させることがで
き、破壊に対する靱性の効果は向上する。これにより、
薄膜磁気ヘッド等のスライダーにおけるヘッド部材の結
晶粒子脱落に対しての磁気ヘッドの信頼性を高めること
ができる。
As described in detail above, according to the present invention,
The average crystal grain size of the Al 2 O 3 -TiC-based sintered body is 0.4 to 1.
By setting the thickness to 2 μm and the standard deviation of individual crystal grain diameters to 0.35 or less, chipping resistance can be improved, and the effect of toughness on fracture is improved. This allows
The reliability of the magnetic head against dropping of crystal grains from the head member in a slider such as a thin film magnetic head can be improved.

【0030】加えて、本発明の焼結体は機械加工性にも
優れており、例えばこの焼結体を薄膜磁気ヘッド用基板
に用いた場合、そのABS を鏡面加工すると顕著な平滑性
が容易に得られ、これにより単位時間当たりの研磨量が
多くなるように鏡面加工条件を厳しくした場合でも粒脱
落の発生が抑えられ、その結果、鏡面加工時間が短縮さ
れ、製造効率、及び製造コストが改善される。
In addition, the sintered body of the present invention is also excellent in machinability. For example, when this sintered body is used for a substrate for a thin film magnetic head, remarkable smoothness can be easily obtained when the ABS is mirror-finished. In this way, even when the mirror polishing conditions are strict so that the polishing amount per unit time is increased, the occurrence of grain drop is suppressed, and as a result, the mirror polishing time is shortened, and the production efficiency and the production cost are reduced. Be improved.

【0031】また、本発明のAl2O3-TiC 系焼結体は精密
加工性、耐摩耗性、強度並びにスライシング加工性に優
れており、これにより磁気ディスク用基板や精密加工治
具等の構成材としても使用できる。
Further, the Al 2 O 3 —TiC-based sintered body of the present invention is excellent in precision workability, wear resistance, strength and slicing workability. It can also be used as a component.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4G030 AA36 AA45 BA18 GA11 5D033 BA52 5D093 AA05 AC08 BD01 BD08 JB10 JC03 5D111 AA19 AA24 BB37 BB48 EE02 FF15 FF23 FF47 FF49 KK07 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G030 AA36 AA45 BA18 GA11 5D033 BA52 5D093 AA05 AC08 BD01 BD08 JB10 JC03 5D111 AA19 AA24 BB37 BB48 EE02 FF15 FF23 FF47 FF49 KK07

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】50〜75重量%のAl2O3 と25〜50重量%のTi
C を主成分と成し、該主成分100 重量部に対し、少なく
とも焼結助剤成分を0.03〜0.5 重量部の割合で含有して
成るAl2O3-TiC 系焼結体であって、焼結体中の円相当平
均結晶粒径が0.4 〜1.2 μm 以下であり、且つ各結晶粒
子の円相当径の標準偏差が0.35以下であることを特徴と
するAl2O3-TiC 系焼結体。
1. A 50 to 75% by weight of Al 2 O 3 and 25 to 50 wt% of Ti
An Al 2 O 3 -TiC-based sintered body comprising C as a main component and containing at least 0.03 to 0.5 parts by weight of a sintering aid component with respect to 100 parts by weight of the main component, Al 2 O 3 -TiC based sintering characterized in that the circle-equivalent average crystal grain size in the sintered body is 0.4 to 1.2 μm or less and the standard deviation of the circle equivalent diameter of each crystal grain is 0.35 or less. body.
【請求項2】劈開破壊に対する靱性値K1c が4.0MPa ・√
m 以上であり、且つヤング率が400MPa以上であることを
特徴とする請求項1記載のAl2O3-TiC 系焼結体。
2. A toughness value K1c against cleavage fracture of 4.0 MPa · √
The Al 2 O 3 —TiC-based sintered body according to claim 1, wherein the Al 2 O 3 -TiC-based sintered body has a modulus of at least 400 m and a Young's modulus of 400 MPa or more.
【請求項3】請求項1又は2記載のAl2O3-TiC 系焼結体
からなる薄膜磁気ヘッド用基板。
3. A substrate for a thin-film magnetic head comprising the Al 2 O 3 —TiC-based sintered body according to claim 1.
JP10276907A 1998-09-30 1998-09-30 Al2O3-TiC-BASED SINTERED PRODUCT AND SUBSTRATE FOR THIN FILM MAGNETIC HEAD USING THE SAME ii Pending JP2000103667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10276907A JP2000103667A (en) 1998-09-30 1998-09-30 Al2O3-TiC-BASED SINTERED PRODUCT AND SUBSTRATE FOR THIN FILM MAGNETIC HEAD USING THE SAME ii

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10276907A JP2000103667A (en) 1998-09-30 1998-09-30 Al2O3-TiC-BASED SINTERED PRODUCT AND SUBSTRATE FOR THIN FILM MAGNETIC HEAD USING THE SAME ii

Publications (1)

Publication Number Publication Date
JP2000103667A true JP2000103667A (en) 2000-04-11

Family

ID=17576060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10276907A Pending JP2000103667A (en) 1998-09-30 1998-09-30 Al2O3-TiC-BASED SINTERED PRODUCT AND SUBSTRATE FOR THIN FILM MAGNETIC HEAD USING THE SAME ii

Country Status (1)

Country Link
JP (1) JP2000103667A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100403843B1 (en) * 2001-01-12 2003-11-01 (주)세라코 Ionizer emitter pin made of ceramic materials
JP2005336034A (en) * 2004-05-28 2005-12-08 Kyocera Corp Al2o3-based ceramic and its production method as well as substrate for use in magnetic head using the same
CN1317223C (en) * 2004-05-11 2007-05-23 山东轻工业学院 Rare earth reinforced alumina ceramic composite materials and production method thereof
CN100383858C (en) * 2005-01-06 2008-04-23 Tdk株式会社 Magnetic head slider material, magnetic head slider, and method for manufacturing magnetic head slider material
CN100399426C (en) * 2005-06-27 2008-07-02 Tdk株式会社 Material for magnetic head slider, magnetic head slider, and method of producing material for magnetic head slider
JP2010055685A (en) * 2008-08-28 2010-03-11 Kyocera Corp Substrate for magnetic head, magnetic head, and magnetic recorder
JP2010131806A (en) * 2008-12-03 2010-06-17 Disco Abrasive Syst Ltd METHOD FOR DIVIDING AlTiC SUBSTRATE
US8173281B2 (en) 2006-11-07 2012-05-08 Kyocera Corporation Ceramic sinter, magnetic head substrate using the same, magnetic head and recording medium drive unit
US8318330B2 (en) * 2007-06-27 2012-11-27 Kyocera Corporation Magnetic read/write head substrate

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100403843B1 (en) * 2001-01-12 2003-11-01 (주)세라코 Ionizer emitter pin made of ceramic materials
CN1317223C (en) * 2004-05-11 2007-05-23 山东轻工业学院 Rare earth reinforced alumina ceramic composite materials and production method thereof
JP2005336034A (en) * 2004-05-28 2005-12-08 Kyocera Corp Al2o3-based ceramic and its production method as well as substrate for use in magnetic head using the same
JP4646548B2 (en) * 2004-05-28 2011-03-09 京セラ株式会社 Method for producing Al2O3 ceramics
CN100383858C (en) * 2005-01-06 2008-04-23 Tdk株式会社 Magnetic head slider material, magnetic head slider, and method for manufacturing magnetic head slider material
CN100399426C (en) * 2005-06-27 2008-07-02 Tdk株式会社 Material for magnetic head slider, magnetic head slider, and method of producing material for magnetic head slider
US8173281B2 (en) 2006-11-07 2012-05-08 Kyocera Corporation Ceramic sinter, magnetic head substrate using the same, magnetic head and recording medium drive unit
US8318330B2 (en) * 2007-06-27 2012-11-27 Kyocera Corporation Magnetic read/write head substrate
JP2010055685A (en) * 2008-08-28 2010-03-11 Kyocera Corp Substrate for magnetic head, magnetic head, and magnetic recorder
JP2010131806A (en) * 2008-12-03 2010-06-17 Disco Abrasive Syst Ltd METHOD FOR DIVIDING AlTiC SUBSTRATE

Similar Documents

Publication Publication Date Title
JPH0622053B2 (en) Substrate material
JPH0319184B2 (en)
JP3933523B2 (en) Ceramic substrate materials for thin film magnetic heads
JP2000103667A (en) Al2O3-TiC-BASED SINTERED PRODUCT AND SUBSTRATE FOR THIN FILM MAGNETIC HEAD USING THE SAME ii
JP3121980B2 (en) Substrate for magnetic head
JP2008084520A (en) Substrate for magnetic head, magnetic head, and recording medium-drive
JP5148502B2 (en) Ceramic sintered body, magnetic head substrate and magnetic head using the same, and recording medium driving apparatus
US7414002B2 (en) Aluminum oxide-titanium nitride sintered body, manufacturing method thereof, and magnetic head substrate, ultrasonic motor and dynamic pressure bearing using the same
JPH0834662A (en) Substrate material for magnetic head having low floating property
EP0137134B1 (en) A magnetic head having a non-magnetic substrate
JP2003012375A (en) Ceramic sintered compact and magnetic head slider
JP4646548B2 (en) Method for producing Al2O3 ceramics
JP3039909B2 (en) Substrate material for magnetic head
JPH04321556A (en) Ceramic material and its production
JPH1112026A (en) Al2o3-tic-based sintered body and base for magnetic head
JP2699093B2 (en) Ceramic material for thin film magnetic head
JPH0543311A (en) Ceramics material and ceramics substrate for thin film magnetic head
JPH05254938A (en) Ceramic sintered compact
JPH05246763A (en) Ceramic sintered compact
JPS63134562A (en) Material for magnetic head slider
JPS6318511A (en) Recording head slider
JPH03119508A (en) Thin-film magnetic head, substrate for thin-film magnetic head and production of this substrate
JP6359897B2 (en) Thin film magnetic head substrate, magnetic head slider, and hard disk drive device
JPH0255390B2 (en)
JPH05109023A (en) Substrate for magnetic head

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20051129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051206

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060206

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20060307