JP2000101089A5 - - Google Patents

Download PDF

Info

Publication number
JP2000101089A5
JP2000101089A5 JP1998271737A JP27173798A JP2000101089A5 JP 2000101089 A5 JP2000101089 A5 JP 2000101089A5 JP 1998271737 A JP1998271737 A JP 1998271737A JP 27173798 A JP27173798 A JP 27173798A JP 2000101089 A5 JP2000101089 A5 JP 2000101089A5
Authority
JP
Japan
Prior art keywords
layer
single crystal
substrate
semiconductor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998271737A
Other languages
English (en)
Japanese (ja)
Other versions
JP4228248B2 (ja
JP2000101089A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP27173798A priority Critical patent/JP4228248B2/ja
Priority claimed from JP27173798A external-priority patent/JP4228248B2/ja
Publication of JP2000101089A publication Critical patent/JP2000101089A/ja
Priority to US09/798,852 priority patent/US6696309B2/en
Publication of JP2000101089A5 publication Critical patent/JP2000101089A5/ja
Application granted granted Critical
Publication of JP4228248B2 publication Critical patent/JP4228248B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP27173798A 1998-09-25 1998-09-25 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 Expired - Fee Related JP4228248B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP27173798A JP4228248B2 (ja) 1998-09-25 1998-09-25 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
US09/798,852 US6696309B2 (en) 1998-09-25 2001-03-02 Methods for making electrooptical device and driving substrate therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27173798A JP4228248B2 (ja) 1998-09-25 1998-09-25 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

Publications (3)

Publication Number Publication Date
JP2000101089A JP2000101089A (ja) 2000-04-07
JP2000101089A5 true JP2000101089A5 (enrdf_load_html_response) 2005-11-04
JP4228248B2 JP4228248B2 (ja) 2009-02-25

Family

ID=17504139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27173798A Expired - Fee Related JP4228248B2 (ja) 1998-09-25 1998-09-25 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

Country Status (1)

Country Link
JP (1) JP4228248B2 (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102029563B1 (ko) 2008-12-11 2019-10-07 오스람 오엘이디 게엠베하 유기발광다이오드 및 조명수단
CN113325641B (zh) * 2018-06-29 2022-12-30 上海中航光电子有限公司 一种阵列基板、显示面板及显示装置

Similar Documents

Publication Publication Date Title
JP2000111943A5 (enrdf_load_html_response)
EP0969505A3 (en) SOI substrate
JP2000150905A5 (enrdf_load_html_response)
EP0993048A3 (en) Nitride semiconductor device and its manufacturing method
BR9509944A (pt) Processo de fabricação de estrutura semicondutora de múltiplas camadas para célula de multijunção estrutura e dispositivo de semicondutor
JP2003324188A (ja) 大面積単結晶シリコン基板の製造方法
US8139175B2 (en) Thin film transistor, thin film transistor substrate, and methods for manufacturing the same
JPH08148430A (ja) 多結晶半導体薄膜の作成方法
JPH0832038A (ja) 貼り合わせｓｏｉ基板の製造方法および貼り合わせｓｏｉ基板
JP2560765B2 (ja) 大面積半導体基板の製造方法
JP2000101089A5 (enrdf_load_html_response)
JPS59229815A (ja) 半導体基板の製造方法
JP2004214400A5 (enrdf_load_html_response)
US6951585B2 (en) Liquid-phase growth method and liquid-phase growth apparatus
Leamy Laser fabrication of silicon on dielectric substrates
RU2102817C1 (ru) Способ изготовления полупроводниковых структур
JP4162749B2 (ja) 多結晶シリコン膜の成長方法
JPS59121823A (ja) 単結晶シリコン膜形成法
JP2001176796A (ja) 半導体膜の形成方法および半導体装置
JPS61201414A (ja) シリコン単結晶層の製造方法
JP2003197524A (ja) 半導体膜の形成方法及び半導体膜、半導体装置、並びにディスプレイ装置
KR20070096865A (ko) 반도체 소자, 반도체 장치 및 그들의 제조 방법
JP2003203864A (ja) 半導体薄膜の製造方法
JP2001223161A (ja) 結晶性半導体膜の製造方法、基板及び半導体装置
JPH09260284A (ja) 半導体装置の製造方法